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14 Feb 1994

Volume 64, Issue 7, pp. 809-938

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Photomechanical stabilization in a polymer fiber‐based all‐optical circuit

D. J. Welker and M. G. Kuzyk

Appl. Phys. Lett. 64, 809 (1994); http://dx.doi.org/10.1063/1.111021 (3 pages) | Cited 9 times

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We report on the demonstration of an all‐optical feedback circuit that photomechanically stabilizes the length of a polymer‐optical fiber through a photothermal mechanism.
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42.79.-e Optical elements, devices, and systems
42.81.-i Fiber optics
65.40.De Thermal expansion; thermomechanical effects
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions

S. R. Kurtz, R. M. Biefeld, L. R. Dawson, K. C. Baucom, and A. J. Howard

Appl. Phys. Lett. 64, 812 (1994); http://dx.doi.org/10.1063/1.111022 (3 pages) | Cited 57 times

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Heterostructures with biaxially compressed, As‐rich InAsSb are being investigated as active regions for midwave infrared emitters. InAs1−xSbx/In1−xGaxAs (x≊0.1) strained‐layer sublattices (SLSs), nominally lattice matched to InAs, were grown using metalorganic chemical vapor deposition. An SLS light‐emitting diode was demonstrated which emitted at 3.6 μm with 0.06% efficiency at 77 K. Optically pumped laser emission at 3.9 μm was observed in a SLS/InPSb heterostructure. The laser had a maximum operating temperature of approximately 100 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
85.60.Jb Light-emitting devices
78.66.Fd III-V semiconductors

White light‐emitting organic electroluminescent devices using the poly(N‐vinylcarbazole) emitter layer doped with three fluorescent dyes

J. Kido, K. Hongawa, K. Okuyama, and K. Nagai

Appl. Phys. Lett. 64, 815 (1994); http://dx.doi.org/10.1063/1.111023 (3 pages) | Cited 337 times

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White light‐emitting electroluminescent devices were fabricated using poly(N‐vinylcarbazole) (PVK) as a hole‐transporting emitter layer and a double layer of 1,2,4‐triazole derivative (TAZ) and tris(8‐quinolinolato)aluminum(III) complex (Alq) as an electron transport layer. The PVK layer was doped with fluorescent dyes such as blue‐emitting 1,1,4,4‐tetraphenyl‐1,3‐butadiene, green‐emitting coumarin 6, and orange‐emitting DCM 1. A cell structure of glass substrate/indium‐tin‐oxide/doped PVK/TAZ/Alq/Mg:Ag was employed. White emission covering a wide range of the visible region and a high luminance of 3400 cd/m2 were obtained at a drive voltage of 14 V.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

X‐ray stimulated Raman scattering in Li and He

E. Hudis, P. L. Shkolnikov, and A. E. Kaplan

Appl. Phys. Lett. 64, 818 (1994); http://dx.doi.org/10.1063/1.111024 (3 pages) | Cited 6 times

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We propose to use initially neutral Li and He gases to observe x‐ray stimulating Raman scattering. We solve the Maxwell–Bloch equations for the Raman scattering in the presence of a strong photoionization atomic depletion and show that very high conversion efficiencies can be obtained, although the required intensities are significantly high to cause very fast photoionization.
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42.55.Vc X- and γ-ray lasers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.55.Ye Raman lasers

Volume holographic storage in hydrogen treated germano‐silicate glass

A. Partovi, T. Erdogan, V. Mizrahi, P. J. Lemaire, A. M. Glass, and J. W. Fleming

Appl. Phys. Lett. 64, 821 (1994); http://dx.doi.org/10.1063/1.111025 (3 pages) | Cited 14 times

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Strong permanent gratings (index change Δn∼3×10−3) have been formed in bulk hydrogen treated germano‐silicate glass with 242 nm exposure. Diffraction efficiencies of 6% and initial sensitivity (Δn/incident energy density) of 2×10−5 cm2/J have been obtained. The observed sensitivity is comparable to the values achieved in other holographic storage materials such as LiNbO3. It is estimated that by more uniform hydrogen loading of the sample, diffraction efficiencies of 100% can be obtained in 3 mol % GeO2 samples of only 175 μm thickness. These materials are potentially useful as fast access time (sub‐μs), high capacity (∼0.8 Tbits), robust, inexpensive write‐one‐read‐many storage media, narrow (subangstrom) linewidth optical filters, and other optical components.
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42.70.Ln Holographic recording materials; optical storage media
42.79.Vb Optical storage systems, optical disks
42.40.Ht Hologram recording and readout methods
42.70.Ce Glasses, quartz

Spatial and temporal characteristics of electrically fixed holograms in photorefractive strontium‐barium niobate

Sergei Orlov, Demetri Psaltis, and Ratnakar R. Neurgaonkar

Appl. Phys. Lett. 64, 824 (1994); http://dx.doi.org/10.1063/1.111026 (3 pages) | Cited 4 times

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We report measurements of the holographic diffraction efficiency (HDE) of single photorefractive gratings fixed by an externally applied voltage pulse in Sr0.75Ba0.25Nb2O6. The polarization grating HDE and decay rate are strongly dependent on the grating spacing and also depend on the intensity of the light beams during the recording and erasing/reconstruction process. Knowledge of the dependence of the fixing process on spatial frequency may be useful for the creation of physical models of local polarization switching in ferroelectrics.
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42.40.-i Holography
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.Vb Optical storage systems, optical disks
77.80.-e Ferroelectricity and antiferroelectricity

Temporal behavior of resonant‐optical‐waveguide phase‐locked diode laser arrays

Sujatha Ramanujan, Herbert G. Winful, Marc Felisky, Richard K. DeFreez, Dan Botez, Michael Jansen, and Phil Wisseman

Appl. Phys. Lett. 64, 827 (1994); http://dx.doi.org/10.1063/1.111027 (3 pages) | Cited 7 times

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Measurements of the temporal and spatial behavior of resonant optical waveguide (ROW) laser arrays with significant interelement loss reveal the presence of sustained self‐pulsations in the output intensity of the laser. The mechanism responsible for pulsations is believed to be saturable absorption arising from the presence of absorbers in the interelement regions. This is experimentally confirmed in that reduction or elimination of the interelement loss suppresses the pulsations. Quiescent behavior is obtained to at least 0.45 W continuous wave power and 3.4 times threshold in near‐diffraction‐limited beams from devices with negligible interelement loss.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Gigahertz switching behavior of polarization‐bistable InGaAsP/InP lasers under high‐frequency current modulation

A. Klehr, R Müller, M. Voss, and A. Bärwolff

Appl. Phys. Lett. 64, 830 (1994); http://dx.doi.org/10.1063/1.111028 (3 pages) | Cited 17 times

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The switching dynamics between TE‐ and TM‐polarization states is studied in a strained ridge‐waveguide InGaAsP/InP laser that exhibits TE/TM bistability. Using current modulation with frequencies between 50 and 500 MHz, three types of emission are distinguished. With increasing modulation amplitude, the laser runs through a region of TE emission, a range of stochastic switching between TE and TM modes, and a third region of regular polarization switching. The minimum modulation amplitude for regular switching rises strongly with frequency while the respective switching times decrease from about 700 ps at 50 MHz down to 250 ps around 500 MHz, corresponding to gigahertz mode switching.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

InAsSb/AlAsSb double‐heterostructure diode lasers emitting at 4 μm

S. J. Eglash and H. K. Choi

Appl. Phys. Lett. 64, 833 (1994); http://dx.doi.org/10.1063/1.111029 (3 pages) | Cited 32 times

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Double‐heterostructure InAsSb/AlAsSb diode lasers emitting at 4 μm have been fabricated. The laser structure was grown on GaSb substrates by molecular beam epitaxy. The devices exhibit continuous wave operation at temperatures up to 80 K, and pulsed operation up to 155 K. The lowest threshold current density is 33 A/cm2 obtained at 50 K, but the characteristic temperature is only 17 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

A novel surface emitting GaAs/AlGaAs laser diode beam steering device based on surface mode emission

A. Köck, C. Gmachl, E. Gornik, M. Rosenberger, C. Thanner, and L. Korte

Appl. Phys. Lett. 64, 836 (1994); http://dx.doi.org/10.1063/1.111031 (3 pages) | Cited 4 times

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We present a novel surface‐emitting GaAs/AlGaAs laser diode beam steering device, which is based on a surface mode emission process. The coupling of the laser mode to a surface mode results in surface emission with a beam divergence of 0.4°, which is steerable at a rate of dα/dλ=−0.245°/nm by a tuning of the laser emission wavelength. The continuous control of the surface mode dispersion by external parameters allows a definite adjustment of the emission angle. In addition, the feedback of the surface mode to the laser mode provides a kind of single mode operation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Towards magnetic centering of the discharge in a krypton flashlamp

D. G. Loveland, N. Candev, and E. Marode

Appl. Phys. Lett. 64, 839 (1994); http://dx.doi.org/10.1063/1.111032 (3 pages)

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The filamentary surface discharge, which occurs in a 2 bar krypton flashlamp before complete breakdown of the whole gas volume, has been guided along a rectilinear path using an earthed, external strip conductor. It has then been pushed away from the tube wall with an impulsionally applied magnetic field of order 0.2 T, reaching the axis of the 5‐mm internal diameter lamp in a time of less than 1 ms.
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42.72.Bj Visible and ultraviolet sources
52.80.-s Electric discharges

Graphite thin film formation by chemical vapor deposition

M. Yudasaka, R. Kikuchi, T. Matsui, H. Kamo, Y. Ohki, S. Yoshimura, and E. Ota

Appl. Phys. Lett. 64, 842 (1994); http://dx.doi.org/10.1063/1.110998 (3 pages) | Cited 21 times

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Well‐ordered graphite thin films were obtained by chemical vapor deposition of 2‐methyl‐ 1,2′‐naphthyl ketone on Ni substrates at substrate temperatures higher than 600 °C. Values of interlayer spacing calculated from x‐ray diffraction data were between 3.360 and 3.350 Å. Raman scattering spectra of the films showed a peak centering at 1580 cm−1.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Possibility of carbon nitride formation by low‐energy nitrogen implantation into graphite: In situ electron spectroscopy studies

A. Hoffman, I. Gouzman, and R. Brener

Appl. Phys. Lett. 64, 845 (1994); http://dx.doi.org/10.1063/1.110999 (3 pages) | Cited 39 times

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The possibility of carbon nitride formation by low‐energy nitrogen ion irradiation of graphite was investigated by in situ x‐ray photoelectron spectroscopy. Room‐temperature and hot 500‐eV N+2 implantations were performed with saturation doses for which a constant nitrogen concentration was obtained. Analysis of the N(1s) core level line indicates the existence of three different carbon–nitrogen bonding states in the room‐temperature implanted layer. Annealing experiments up to 500 °C revealed a slight, gradual decrease of nitrogen concentration in the implanted layer accompanied by a partial redistribution of the nitrogen bonding states. Hot nitrogen implantations at 300 and 500 °C resulted in a predominant population of the more covalent, with higher N(1s) binding energy, nitrogen bonding state. Such a distribution of carbon–nitrogen chemical bonds could not have been obtained by annealing of the room‐temperature implanted layer. These results may be of importance in finding a way to produce the elusive β‐C3N4 phase by ion beam assisted deposition.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Observation of residual strain in dynamically excited electrostrictors

S. T. Vohra, L. Fabiny, and F. Bucholtz

Appl. Phys. Lett. 64, 848 (1994); http://dx.doi.org/10.1063/1.111000 (3 pages)

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We measured the dynamic small strain effects in electrostrictive ceramics with a high resolution fiber optic interferometer. The dynamic strain response of both a lead magnesium niobate (PMN) and a lead zirconate titanate (PZT)‐based electrostrictive ceramic exhibited a residual signal which cannot be understood by the simple scalar strain‐polarization relationship, e+QP2. The magnitude of the residual signal decreased as a function of increasing temperature indicating that the residual strain signal has origins in the remnant electric polarization of the material. The magnitude of the residual strain was generally higher for the PZT‐based electrostrictor than for the PMN based sample. The observed residual strain signal represents a novel phenomenon previously unseen in the dynamical strain response of electrostrictive ceramics.
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77.65.Bn Piezoelectric and electrostrictive constants
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Preparation of cubic boron nitride films by low pressure inductively coupled plasma enhanced chemical vapor deposition

Takanori Ichiki and Toyonobu Yoshida

Appl. Phys. Lett. 64, 851 (1994); http://dx.doi.org/10.1063/1.111001 (3 pages) | Cited 38 times

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Cubic boron nitride (c‐BN) films have been prepared by low pressure inductively coupled plasma‐enhanced chemical vapor deposition (ICP‐CVD). 13.56 MHz ICP was generated inside a 38 mm diam tube by supplying 7 kW rf power at 1×10−3 Torr. Films were deposited on Si(100) substrates from the B2H6+N2+He+Ar system at 900 °C. Polycrystalline c‐BN films with the grain size less than 50 nm were deposited with the proper ion bombardment of the growing surface. The presence of cubic phase of boron nitride has been confirmed by both infrared absorption spectroscopy and electron diffraction patterns. The optimum sheath potential for c‐BN growth in this work was revealed to be 80–86 V.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Improved composition homogeneity during selective area epitaxy of GaInAs using a novel In precursor

M. Eckel, D. Ottenwälder, F. Scholz, G. Frankowsky, T. Wacker, and A. Hangleiter

Appl. Phys. Lett. 64, 854 (1994); http://dx.doi.org/10.1063/1.111002 (3 pages) | Cited 2 times

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GaInAs layers were grown selectively on partially masked InP substrates by metalorganic vapor phase epitaxy using the conventional In precursor trimethyl‐indium (TMI) and the intramolecularly saturated compound dimethylaminopropyl‐dimethyl‐indium (DADI) for comparison. We obtained for both TMI and DADI an excellent morphology of the selectively grown structures. Significant differences between the two In sources were determined for the unwanted nucleation on the masked area and for the homogeneity of the composition of the grown ternary material. We attribute this observation to the higher chemical stability of DADI and a changed decomposition behavior, which leads to longer effective diffusion lengths for DADI and its thermally decomposed fragments in the gas phase.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers

J. Baur, K. Maier, M. Kunzer, U. Kaufmann, J. Schneider, H. Amano, I. Akasaki, T. Detchprohm, and K. Hiramatsu

Appl. Phys. Lett. 64, 857 (1994); http://dx.doi.org/10.1063/1.111003 (3 pages) | Cited 50 times

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A characteristic infrared luminescence band, dominated by a zero‐phonon line at 1.30 eV has been consistently detected in gallium nitride (GaN) epitaxial layers. It is assigned to the intra‐3d‐shell transitions 4T1(G)→6A1(S) of omnipresent iron trace impurities, Fe3+Ga(3d5). Another infrared emission is often also observed at 1.19 eV. This is tentatively assigned to chromium trace impurities, Cr4+Ga(3d2). The role of iron and chromium as minority‐carrier lifetime killers in GaN‐based optoelectronic devices is suggested from these data.
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71.55.Eq III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Large scale surface structure formed during GaAs (001) homoepitaxy

C. Orme, M. D. Johnson, J. L. Sudijono, K. T. Leung, and B. G. Orr

Appl. Phys. Lett. 64, 860 (1994); http://dx.doi.org/10.1063/1.111004 (3 pages) | Cited 79 times

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Atomic force microscopy studies have been performed on GaAs (001) homoepitaxy films grown by molecular beam epitaxy. Multilayered features are seen to evolve when the growth conditions favor island nucleation. As the epilayer thickness is increased these features grow in all dimensions but the angle of inclination remains approximately constant at 1°. The mounding does not occur on surfaces grown in step flow. We propose that the multilayered features are an unstable growth mode which relies on island nucleation and the presence of a step edge barrier.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Sb‐induced interatomic bond distance stabilization on InP(100) surface

P. S. Mangat, P. Soukiassian, Y. Huttel, B. Gruzza, and A. Porte

Appl. Phys. Lett. 64, 863 (1994); http://dx.doi.org/10.1063/1.110977 (3 pages) | Cited 2 times

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We have studied the formation of the Sb/InP(100) interface by photoemission extended x‐ray absorption fine structure. Our results indicate that a low Sb coverage stretches and subsequently weakens P—In surface bonds which appears as a precursor stage prior to In—Sb bond formation. Then, at increasing Sb coverages, the substrate surface reconstructs with bonds approaching the relaxed clean InP(100) surface values. This results from the breakdown of In clusters (formed during surface preparation by ion sputtering) which leads to the formation of an InSb interface layer. The surface is finally found to be stabilized at higher Sb coverages with no more change in the substrate first and second near neighbor bond distances.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.60.Dv Thermal stability; thermal effects
81.65.-b Surface treatments
68.55.-a Thin film structure and morphology

Photoinduced hysteresis changes and charge trapping in BaTiO3 dielectrics

W. L. Warren and D. Dimos

Appl. Phys. Lett. 64, 866 (1994); http://dx.doi.org/10.1063/1.110978 (3 pages) | Cited 35 times

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We have been able to observe intrinsic photoinduced changes in the hysteresis response of BaTiO3 single crystals by the application of ultraviolet (UV) light in combination with an applied bias. The amount of switchable polarization can be suppressed by over 90% by this UV/bias treatment. The photoferroelectric effects are reproducible, reversible, and stable. Electron paramagnetic resonance measurements were also made to characterize the charge trapping associated with these electrical effects. We find that isolated Fe sites are trap centers in these ceramics and it appears that the Fe3+ density can be correlated to the amount of switchable polarization. These results also suggest that BaTiO3 ceramics can be used as a medium to store optical images.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
76.30.Mi Color centers and other defects
42.79.Vb Optical storage systems, optical disks

Reduced threshold all‐optical bistability in etched quantum well microresonators

T. Rivera, F. R. Ladan, A. Izraël, R. Azoulay, R. Kuszelewicz, and J. L. Oudar

Appl. Phys. Lett. 64, 869 (1994); http://dx.doi.org/10.1063/1.110979 (3 pages) | Cited 16 times

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All‐optical bistability is demonstrated in GaAs/AlGaAs multiple quantum well microresonators fabricated by SiCl4 reactive ion etching. A fabrication process has been developed in order to obtain low threshold bistability. The studied samples are two‐dimensional 15×15 arrays of cylindrical microresonators of 4 μm diam and 6 μm height. Owing to lateral carrier and light confinement, bistability is observed with a strongly reduced threshold power, below 100 μW. This result was obtained without post‐etching surface treatment. The low bistability threshold suggests that the surface recombination rate is reasonably small, possibly due to some self‐passivation occurring during the etching process.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.82.Cr Fabrication techniques; lithography, pattern transfer

Phonon limited intersubband lifetimes and linewidths in a two‐dimensional electron gas

Jerome Faist, Carlo Sirtori, Federico Capasso, Loren Pfeiffer, and Ken W. West

Appl. Phys. Lett. 64, 872 (1994); http://dx.doi.org/10.1063/1.110980 (3 pages) | Cited 52 times

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Using an excited‐state induced absorption spectroscopy technique, we have measured the lifetime of a state separated from the ground state by less than the optical phonon energy in a modulation‐doped structure. A lifetime of τ=(300±100) ps is found in agreement with the prediction for the emission of an acoustic phonon. Moreover, we report the first direct evidence of a lifetime‐broadened intersubband absorption line with a full width at half‐maximum of 2.66 meV for a transition energy of E13=136 meV.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.47.-p Spectroscopy of solid state dynamics

Band‐edge and deep level photoluminescence of pseudomorphic Si1−x−yGexCy alloys

P. Boucaud, C. Francis, F. H. Julien, J.‐M. Lourtioz, D. Bouchier, S. Bodnar, B. Lambert, and J. L. Regolini

Appl. Phys. Lett. 64, 875 (1994); http://dx.doi.org/10.1063/1.110981 (3 pages) | Cited 66 times

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Photoluminescence of strained Si1−x−yGexCy alloys grown by rapid thermal chemical vapor deposition on Si(100) is investigated. Two dominant features are reported: At low pump intensities, the photoluminescence is dominated by a deep level broad luminescence peak around 800 meV whereas at high pump intensities, a well‐resolved band‐edge luminescence (no phonon and transverse optic replica) is observed. At 77 K, we attribute this band‐edge feature to an electron‐hole plasma luminescence of the ternary alloy. The dependences of the deep level and band‐edge peaks versus the excitation power density are, respectively square‐root‐like or superlinear. A blue shift of the energy gap of Si1−x−yGexCy alloys with respect to Si1−xGex alloy is observed. The blue shift increase with carbon content corresponds to what is expected for the bulk alloy. An eventual influence of the strain relaxation cannot be excluded.
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78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors
68.55.-a Thin film structure and morphology
71.55.Ht Other nonmetals

Device model for pulsing in silicon p‐i‐n structures

A. G. U. Perera and S. Matsik

Appl. Phys. Lett. 64, 878 (1994); http://dx.doi.org/10.1063/1.110982 (3 pages) | Cited 1 time

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We report experimental data and modeling results based on device physics and circuit parameters for the spontaneous firing patterns for silicon p‐i‐n structures at 4.2 K controlled by a constant current source. The model provides insights into the sensitivity of the pulsing rate and explains the wide range of behavior observed. The knowledge on the effect of these parameters on pulsing is critical for designing uniform arrays, which will have a major impact on applications such as infrared detectors and neural net models. The model will also serve as the first step towards obtaining high temperature pulsing arrays using quantum well structures.
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72.20.Ht High-field and nonlinear effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling

Mid‐infrared interband magneto‐absorption in HgTe/CdTe superlattices

R. Sizmann, P. Helgesen, T. Colin, T. Skauli, and S. Løvold

Appl. Phys. Lett. 64, 881 (1994); http://dx.doi.org/10.1063/1.110983 (3 pages) | Cited 3 times

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We demonstrate that interband magneto‐absorption in the mid‐infrared regime is a powerful technique to characterize the electronic properties of HgTe/CdTe superlattices. The rich optical spectra permit a close comparison with theoretically evaluated band structures and provide a valuable feedback for growth. The experimentally obtained band‐gap energies between hole and electron subbands for the HgTe/CdTe superlattice structure considered here are in good agreement with published values calculated for a valence‐band offset of 350 meV.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.20.Ls Magneto-optical effects
78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
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