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21 Feb 1994

Volume 64, Issue 8, pp. 945-1052

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SiO2 formation by thermal evaporation of SiO in oxygen atmosphere used to fabrication of high performance polycrystalline silicon thin film transistors

T. Sameshima, A. Kohno, M. Sekiya, M. Hara, and N. Sano

Appl. Phys. Lett. 64, 1018 (1994); http://dx.doi.org/10.1063/1.110956 (3 pages) | Cited 16 times

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A reactive evaporation of SiO in an oxygen atmosphere was investigated for forming a good interface of SiO2/Si. SiO2 films are formed at room temperature by evaporation of a SiO powder in an oxygen atmosphere with a flow rate of 2 sccm at a pressure of 1×10−4 Torr. The interface trapping density at SiO2/Si was lower than 5×1010 cm−2 eV−1. n‐ and p‐channel Al‐gate polycrystalline silicon thin film transistors (poly‐Si TFTs) were fabricated at 270 °C with the present SiO2 films as a gate oxide and laser crystallized poly‐Si films formed using a pulsed XeCl excimer laser. They showed good characteristics of a low threshold voltage of 1.1 V (n‐channel) and −1.2 V (p‐channel), and a high carrier mobility of 450 cm2/V s (n‐channel) and 270 cm2/V s (p‐channel).
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.30.Tv Field effect devices

Low‐temperature silicon homoepitaxy by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition

Heung‐Sik Tae, Seok‐Hee Hwang, Sang‐June Park, Euijoon Yoon, and Ki‐Woong Whang

Appl. Phys. Lett. 64, 1021 (1994); http://dx.doi.org/10.1063/1.110957 (3 pages) | Cited 20 times

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High quality silicon homoepitaxial layers are successfully grown at 560 °C by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition (UHV‐ECRCVD) using a SiH4/H2 plasma. The effects of substrate dc bias on the in situ hydrogen plasma clean and the subsequent silicon epitaxial growth are examined by the reflection high‐energy electron diffraction (RHEED), secondary ion mass spectroscopy (SIMS), and cross‐section transmission electron microscopy (XTEM). It is observed that the substrate dc bias plays a significant role in obtaining a damage‐free, clean Si substrate prior to epitaxial growth. Severe damage in the Si surface is observed by XTEM, though RHEED shows a streaky pattern, when the substrate is electrically floating, but the damage can be suppressed with +10 V dc bias to the substrate. Substrate dc bias during plasma deposition drastically changes the crystal structure from polycrystalline at −50 V to high quality epitaxial silicon at substrate biases greater than +50 V. Precise control of the ion energy during in situ cleaning and plasma deposition is very important in low‐temperature Si epitaxy by UHV‐ECRCVD and it is possible by proper control of the substrate dc bias.
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68.55.-a Thin film structure and morphology

Sulfurization of SiO2 surface for polycrystalline silicon growth on SiO2/Si structure at 250 °C

K. C. Wang, H. L. Hwang, and T. R. Yew

Appl. Phys. Lett. 64, 1024 (1994); http://dx.doi.org/10.1063/1.110958 (3 pages) | Cited 10 times

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A study of sulfurizing SiO2 surfaces for the growth of Si/SiO2/Si structures was done in the present work. The silicon film was deposited at 250 °C by plasma enhanced chemical vapor deposition. All of the deposited Si films with or without sulfur treatment were of amorphous phases with a H2/(SiH4+H2) flow ratio less than 92%. For those films deposited at the H2/(SiH4+H2) flow ratio of 92%, a transition amorphous Si layer appeared between the SiO2 and polycrystalline silicon films in those samples without sulfur treatment. No transition amorphous Si layer was present in the sample deposited with sulfur treatment, and the largest grain size of polycrystalline silicon was estimated to be around 500 Å. The polycrystalline phase was obtained in all the silicon films deposited on SiO2/Si substrate with a H2/(SiH4+H2) flow ratio larger than 92%. This technique would be applicable towards thin film transistor fabrication.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Tv Field effect devices

Preferential donor–acceptor pairing results for ZnSe:Na

L. Radomsky, G.‐J. Yi, and G. F. Neumark

Appl. Phys. Lett. 64, 1027 (1994); http://dx.doi.org/10.1063/1.110959 (3 pages) | Cited 3 times

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Preferential pairing between donors and acceptors, which results from the Coulomb attraction between ionized donors and acceptors, has frequently been suggested, but has been very difficult to establish conclusively. We here report definitive identification of such preferential pairing, from donor‐acceptor pair luminescence. We observed identical close pair lines (both in location and in relative intensity) in two samples of Na‐doped ZnSe, but the associated distant pair peak was observed at different energies in the two samples. We explain this by assuming that there is strong preferential pairing in one sample and weak or random pairing in the other.
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61.72.uj III-V and II-VI semiconductors
61.72.Yx Interaction between different crystal defects; gettering effect
78.55.Et II-VI semiconductors
71.55.Gs II-VI semiconductors

Effect of high‐temperature annealing on the dissolution of the D‐defects in n‐type Czochralski silicon

W. Wijaranakula and H.‐D. Chiou

Appl. Phys. Lett. 64, 1030 (1994); http://dx.doi.org/10.1063/1.110960 (3 pages) | Cited 5 times

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The effect of high‐temperature annealing on the dissolution of crystal grown‐in defects referred to as D‐defects in n‐type Czochralski silicon under various annealing conditions was studied. Annealing at 1200 °C for 1 h in either oxygen or nitrogen ambient causes the dissolution of the D‐defects while in contrast no effect of a high‐temperature annealing in hydrogen ambient on the D‐defects was observed. Based upon the present analysis, D‐defect dissolution during oxygen and nitrogen annealing could be attributed to vacancy undersaturation resulting from silicon interstitial injection from the silicon surface. Annealing in hydrogen ambient is hypothesized to cause vacancies at the surface sites to migrate into the silicon lattice via a Schottky defect formation mechanism.
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61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters

Consistent explanation on Lorentz force‐free dissipation in H∥I∥c for various high Tc superconductors

Songliu Yuan

Appl. Phys. Lett. 64, 1033 (1994); http://dx.doi.org/10.1063/1.110961 (3 pages) | Cited 9 times

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It is shown that the extended Josephson coupling model, which takes into account the effective thermal energy and the unusual vortex dynamics in high Tc superconductors, is able to provide a consistent explanation on the Lorentz force‐free resistive dissipation generally observed in H∥I∥c for various high Tc materials.
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74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.72.-h Cuprate superconductors

Field‐induced metastable states in ultrathin films of fcc Fe/Cu(100)

G. G. Hembree, Jeff Drucker, S. D. Healy, K. R. Heim, Z. J. Yang, and M. R. Scheinfein

Appl. Phys. Lett. 64, 1036 (1994); http://dx.doi.org/10.1063/1.110962 (3 pages) | Cited 4 times

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The thickness dependence of both the perpendicular and in‐plane magnetization is observed for pseudomorphic ultrathin, fcc Fe epitaxial films grown on room temperature Cu(100). Ferromagnetically ordered 3.5‐monolayer‐thick films display both in‐plane and perpendicular remanence. Perpendicular remanence, lost after a 9.0 kOe static field is applied perpendicular to the film plane, can be restored by either heating or applying large in‐plane fields. These field‐induced metastable states are interpreted in terms of magnetoelastic effects which modify the exchange and anisotropy constants both perpendicular to and within the film plane.
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75.70.Ak Magnetic properties of monolayers and thin films
75.30.Gw Magnetic anisotropy
75.70.Rf Surface magnetism

Creation of bulk, superlatticelike structure and giant magnetoresistance effect in a deformed Cu‐Ni‐Fe alloy

L. H. Chen, S. Jin, T. H. Tiefel, and R. Ramesh

Appl. Phys. Lett. 64, 1039 (1994); http://dx.doi.org/10.1063/1.110963 (3 pages) | Cited 13 times

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A spinodally decomposed Cu‐20 Ni‐20 Fe alloy containing ∼500 Å size ferromagnetic particles was uniaxially deformed to create a locally multilayered, superlatticelike structure with alternating ferromagnetic and nonmagnetic layers. When the size scale of each layer was made to be small, ∼15 Å thick, a dramatic improvement in room‐temperature magnetoresistance ratio from ∼0.6 to ∼5% was obtained. An abnormal temperature dependence of magnetoresistance ratio, i.e., the room‐temperature value being greater than that at 4.2 K, was found. The observed giant magnetoresistance behavior could be explained in terms of the field‐induced decrease in electron scattering in a nearly superparamagnetic material although the spin‐dependent scattering at the two‐phase interface and in the ferromagnetic phase may also be a contributing factor.
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72.15.Gd Galvanomagnetic and other magnetotransport effects
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

New method of deposition of biomolecules for bioelectronic purposes

P. Morales and M. Sperandei

Appl. Phys. Lett. 64, 1042 (1994); http://dx.doi.org/10.1063/1.110964 (3 pages) | Cited 5 times

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A laser induced plasma vaporization and ionization technique is proposed for electric field assisted deposition of proteins. Experiments were carried out depositing thick layers of lysozyme on metal, creating submillimeter patterns. The enzymatic activity of horseradish peroxidase deposited by this method was tested, together with that of the enzyme laccase from a micro‐organism. The applicability of this method to the construction of nanometric patterns for bioelectronic purposes is discussed.
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81.15.Fg Pulsed laser ablation deposition

Synchrotron radiation‐excited etching of W, Ta, and their oxide films

Shingo Terakado, Kazuhiro Kaneda, Shigeo Suzuki, and Kenichiro Tanaka

Appl. Phys. Lett. 64, 1045 (1994); http://dx.doi.org/10.1063/1.110965 (3 pages)

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Synchrotron radiation‐(SR‐)excited etching of W, Ta, and their oxide films using a mixture of SF6 and Ar gases was studied. Although irradiated regions of W and Ta were only slightly etched, WO3 and Ta2O5 were clearly etched. The etching of the nonirradiated region was almost negligible in all these materials. Introduction of reactive species generated by microwave discharge greatly promoted the etching of these materials, keeping area selectivity high. We found that SR played an important role in the etching through surface photochemical reaction.
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81.05.Bx Metals, semimetals, and alloys
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
82.50.-m Photochemistry
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Titanium nitride for transparent conductors

Masato Kiuchi and Akiyoshi Chayahara

Appl. Phys. Lett. 64, 1048 (1994); http://dx.doi.org/10.1063/1.110966 (2 pages) | Cited 9 times

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The transparency of thin films of the electroconductive titanium nitride was demonstrated. Titanium nitride has a high hardness and a high resistance against corrosion, and it is electroconductive. Its color is gold, and it is usually not transparent. Materials can be transparent if they are much thinner than the wavelength of visible light. Formerly, there was no technique available to form such a thin TiN film which is also electroconductive, because very thin TiN crystals grow as small islands. However, by using the dynamic ion beam mixing technique, we succeeded in forming continuous, transparent, and conductive TiN films.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.80.Jh Ion radiation effects
42.70.-a Optical materials

Use of high Tc superconducting electrodes for lead lanthanum zirconium titanate ceramics

Chi‐Shiung Hsi, Gene H. Haertling, and Eugene Furman

Appl. Phys. Lett. 64, 1050 (1994); http://dx.doi.org/10.1063/1.110967 (3 pages) | Cited 4 times

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Lead lanthanum zirconium titanate (PLZT) 9.5/65/35 samples were electroded with BSCCO and YBCO superconductor materials. Extensive interaction was obtained between the PLZT and the YBCO, and very low interaction was observed between the BSCCO and the PLZT. The BSCCO superconductor on the PLZT substrate maintained its superconducting properties at liquid nitrogen temperature. The apparent dielectric constant of the PLZT was influenced by the electroding materials. Domain switching was found to be influenced by the electrode materials at low temperature. The BSCCO electroded samples showed the highest polarization switching rate among the samples electroded by different materials.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
74.78.-w Superconducting films and low-dimensional structures
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
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