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28 Feb 1994

Volume 64, Issue 9, pp. 1059-1170

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Laser dehydrogenation/crystallization of plasma‐enhanced chemical vapor deposited amorphous silicon for hybrid thin film transistors

P. Mei, J. B. Boyce, M. Hack, R. A. Lujan, R. I. Johnson, G. B. Anderson, D. K. Fork, and S. E. Ready

Appl. Phys. Lett. 64, 1132 (1994); http://dx.doi.org/10.1063/1.110829 (3 pages) | Cited 59 times

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A low temperature process for laser dehydrogenation and crystallization of hydrogenated amorphous silicon (a‐Si:H) has been developed. This process removes hydrogen by laser irradiations at three energy steps. Studies of hydrogen out‐diffusion and microstructure show that hydrogen out‐diffusion depends strongly on film structure and the laser energy density. Both high quality and low leakage bottom gate polycrystalline silicon and a‐Si:H thin film transistors were monolithically fabricated on the same Corning 7059 glass substrate with a maximum process temperature of only 350 °C.
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85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
66.30.J- Diffusion of impurities

Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical‐cavity, single pass configuration

K. Yung, J. Yee, J. Koo, M. Rubin, N. Newman, and J. Ross

Appl. Phys. Lett. 64, 1135 (1994); http://dx.doi.org/10.1063/1.110830 (3 pages) | Cited 24 times

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We report the first observation of stimulated emission from a GaN film grown by ion‐assisted molecular beam epitaxy. The observed near‐UV optical emission power was a nonlinear function of the pump power density. The characteristics of the observed stimulated emission are similar to those observed recently from films grown with low‐pressure metalorganic chemical vapor deposition techniques.
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78.66.Fd III-V semiconductors
78.45.+h Stimulated emission
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Room‐temperature operation of a tunneling hot‐electron transfer amplifier

T. S. Moise, Y.‐C. Kao, and A. C. Seabaugh

Appl. Phys. Lett. 64, 1138 (1994); http://dx.doi.org/10.1063/1.110831 (3 pages) | Cited 2 times

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We demonstrate a tunneling hot‐electron transfer amplifier that exhibits both dc and rf current gain at room temperature. The measured peak common‐emitter current gain of the transistor approaches 7 while the dc differential gain is close to 10. S‐parameter measurements, performed at a current density of 1.8×104 A cm−2, yield a current gain cutoff frequency of 6 GHz and a maximum frequency of oscillation of 12.5 GHz.
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85.30.Pq Bipolar transistors
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Behavior of porous silicon emission spectra during quenching by immersion in metal ion solutions

D. Andsager, J. Hilliard, and M. H. Nayfeh

Appl. Phys. Lett. 64, 1141 (1994); http://dx.doi.org/10.1063/1.110832 (3 pages) | Cited 25 times

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The photoluminescence emission of porous silicon was regularly measured while immersed in dilute metal ion solutions of Cu, Ag, and Au. The emission spectra show progressive quenching that advances from the blue edge towards the red edge of the emission band, causing a continuous shift in the band center and a narrowing of its width. Auger electron spectroscopy data show that the penetration of the metal adsorbate into the porous layer correlates with the degree of quenching of the photoluminescence. These results are interpreted as a progression of the quenching of the photoluminescence inward from the surface of the sample toward the bulk.
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78.55.Hx Other solid inorganic materials
78.40.Ha Other nonmetallic inorganics
81.65.-b Surface treatments

Mid‐infrared field‐tunable intersubband electroluminescence at room temperature by photon‐assisted tunneling in coupled‐quantum wells

Jerome Faist, Federico Capasso, Carlo Sirtori, Debbie Sivco, Albert L. Hutchinson, Sung‐Nee G. Chu, and Alfred Y. Cho

Appl. Phys. Lett. 64, 1144 (1994); http://dx.doi.org/10.1063/1.110833 (3 pages) | Cited 42 times

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Electroluminescence associated with intersubband transition energies greater than the optical phonon energy and at temperatures as high as 300 K is reported. The mid‐infrared (λ∼5 μm) luminescence is generated by electron injection into AlInAs/GaInAs coupled‐quantum wells via an AlInAs/GaInAs pseudoquaternary graded gap alloy. Optical powers up to a few nanowatts and linear in the drive current have been measured. The large Stark shift of the luminescence peak demonstrates the photon‐assisted tunneling nature of the transition. The temperature independence of the luminescence slope efficiency in the 10–100 K range and the linearity of the optical power versus drive current provide strong evidence of population inversion.
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78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors
73.40.Gk Tunneling
78.30.Fs III-V and II-VI semiconductors

Atom and bond centered localized valence‐band states in Cd0.5Zn0.5Te alloys

David W. Niles and Hartmut Höchst

Appl. Phys. Lett. 64, 1147 (1994); http://dx.doi.org/10.1063/1.110834 (3 pages) | Cited 3 times

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Angle‐resolved valence‐band photoemission spectroscopy is used to analyze the local electronic structure in Cd0.5Zn0.5Te(100) alloy films. Localized alloy valence‐band states may be divided into two categories: (1) Atom centered states associated with Cd 4d and Zn 3d core‐like states, and (2) bond centered states associated with the X6 critical point of the split‐off band. While the atom centered states show distinct emission and no intermixing between Cd 4d and Zn 3d bands near the Γ point, bond centered X6 states are mixed but split by ∼0.4 eV. We discuss our experimental results within the framework of Wei and Zungers structural model, and show how far experimental evidence corroborates their theory.
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71.23.-k Electronic structure of disordered solids
71.23.An Theories and models; localized states

Femtosecond reflectivity of 60 K Y‐Ba‐Cu‐O thin films

L. Shi, T. Gong, W. Xiong, X. Weng, Y. Kostoulas, Roman Sobolewski, and P. M. Fauchet

Appl. Phys. Lett. 64, 1150 (1994); http://dx.doi.org/10.1063/1.110835 (3 pages) | Cited 5 times

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We report systematic studies of the femtosecond transient reflectivity at 2 eV in partially oxygen‐depleted Y‐Ba‐Cu‐O thin films exhibiting the resistive superconducting transition at 60 K. Our measurements, performed at room temperature, reveal that in 60 K films, the Fermi level in the Cu‐O2 plane lies approximately 2 eV above the filled copper d9/d10 band. By mapping the transient optical response across a 1 cm2 film, we show that the position of the Fermi level is very sensitive to the apparent local variations of the film oxygen content, which gives rise to dramatically different transient optical responses. We also observe a strong transient reflectivity dependence on intensity, which can be attributed to the shift of the Fermi level caused by nonequilibrium hole heating.
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74.78.-w Superconducting films and low-dimensional structures
74.25.Gz Optical properties
78.47.-p Spectroscopy of solid state dynamics
74.25.Jb Electronic structure (photoemission, etc.)

Flux‐flow transistors based on long YBa2Cu3O7−δ bicrystal grain boundary junctions

Y. M. Zhang, D. Winkler, P. Å. Nilsson, and T. Claeson

Appl. Phys. Lett. 64, 1153 (1994); http://dx.doi.org/10.1063/1.110836 (3 pages) | Cited 27 times

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Josephson flux‐flow transistors were made from long YBa2Cu3O7−δ bicrystal grain boundary junctions. A normal metal loop, separated from the junction by an SiO layer, was used as the current control line. The line modulated the critical current, Ic , which for temperatures ≤60 K showed the typical dependence for a long junction, while at higher temperatures the regular small junction modulation was seen. Current gain larger than unity was obtained below 70 K. The current gain increased with the junction length, and varied roughly like √Ic when decreasing the temperature. A transresistance larger than 5 Ω was obtained at 15 K. Better performance is expected from junctions with higher current densities.
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85.25.Cp Josephson devices
74.78.-w Superconducting films and low-dimensional structures
74.50.+r Tunneling phenomena; Josephson effects

Magnetic force microscopy images of magnetic garnet with thin‐film magnetic tip

A. Wadas, John Moreland, Paul Rice, and R. R. Katti

Appl. Phys. Lett. 64, 1156 (1994); http://dx.doi.org/10.1063/1.110837 (3 pages) | Cited 7 times

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We present magnetic force microscopy images of YGdTmGa/YSmTmGa magnetic garnet, using a thin magnetic film deposited on Si3N5 atomic force microscopy tips. We have found correlations between the topography and the magnetic domain structure. We show that by using either magnetized Fe‐Ni bilayer tips versus unmagnetized single layer Fe tips that the image contrast shows domains versus domain walls, respectively.
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75.60.Ch Domain walls and domain structure
75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.50.Dd Nonmetallic ferromagnetic materials
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Electrical resistivity of nanocrystalline PbS grown in a polymer matrix

M. Mukherjee, A. Datta, and D. Chakravorty

Appl. Phys. Lett. 64, 1159 (1994); http://dx.doi.org/10.1063/1.110838 (3 pages) | Cited 27 times

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PbS particles of average diameters ranging from 9.9 to 18.0 nm have been synthesized within a polyacrylamide matrix. The percolative chains of these particles exhibit intrinsic semiconducting behavior at temperatures higher than 340 K. The estimated band gap for these particles are found to be much higher than that of bulk PbS being in the range 1.03 to 1.49 eV. The low‐temperature conductivity of these composites appears to be controlled by an electron tunneling mechanism.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.80.-r Conductivity of specific materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Nanometer‐scale modification of biological membranes by field emission scanning tunneling microscopy

Ricardo García

Appl. Phys. Lett. 64, 1162 (1994); http://dx.doi.org/10.1063/1.110839 (3 pages) | Cited 7 times

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Manipulation and modification at atomic and nanometer scales of some semiconductor and metallic samples has been made possible by scanning tunneling microscopy (STM). This has generated novel approaches for designing new devices at nanometer scale. The poor electronic conductivity of biological molecules has prevented the extension of those methods to them. Here, it is described how a low current STM operated in the field emission regime allows, reproducible imaging and selective modification of biological membranes. A method is presented (i) to visualize at high‐resolution hydrated purple membrane sheets, (ii) to produce nanometer‐scale marks on them, and (iii) to image the altered membranes.  
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.65.-b Surface treatments
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Mechanism of stress transmission from an electrorheological fluid to the electric plates

Tetsuo Miyamoto and Motonori Ota

Appl. Phys. Lett. 64, 1165 (1994); http://dx.doi.org/10.1063/1.110840 (3 pages) | Cited 5 times

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We propose a new mechanism of stress transmission from an electrorheological fluid (ERF) to the electric plates. Employing the cubic particle chain model, we have calculated the force acting on the particle of chains spanning the electric plate gap. In a linear region between stress and strain, we have found that the friction force between the plate and the adjacent particle is very important to induce stress from an ERF. The friction force is also a key factor to determine which phenomena occur first, the particle chain breaks up or it begins to move on the plate.  
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83.80.Gv Electro- and magnetorheological fluids
83.60.Np Effects of electric and magnetic fields

Comparison of the chemical structure and composition between N2O oxides and reoxidized NH3‐nitrided oxides

M. Bhat, J. Ahn, D. L. Kwong, M. Arendt, and J. M. White

Appl. Phys. Lett. 64, 1168 (1994); http://dx.doi.org/10.1063/1.111951 (3 pages) | Cited 25 times

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The chemical structure and composition of ultrathin N2O oxides have been investigated using angle resolved x‐ray photoelectron spectroscopy and compared to those of reoxidized NH3‐nitrided SiO2. It is found that N2O oxide shows a second nitrogen‐related bond (N—O bonds) in close proximity to the SiO2/Si interface in addition to the typically observed Si—N bonds in reoxidized NH3‐nitrided SiO2. In addition, the change of the difference between Si 2p and O 1s binding energies in the N2O oxide and reoxidized NH3‐nitrided SiO2 with the take‐off angle is negligible due to the interfacial nitrogen incorporation.
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85.40.Hp Lithography, masks and pattern transfer
85.30.Tv Field effect devices
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.60.-p Physical properties of thin films, nonelectronic
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