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4 Jul 1994

Volume 65, Issue 1, pp. 1-126

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Monolithic strained‐InGaAsP multiple‐quantum‐well lasers with integrated electroabsorption modulators for active mode locking

Kenji Sato, Koichi Wakita, Isamu Kotaka, Yasuhiro Kondo, Mitsuo Yamamoto, and Atsushi Takada

Appl. Phys. Lett. 65, 1 (1994); http://dx.doi.org/10.1063/1.113059 (3 pages) | Cited 51 times

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Active mode locking by monolithic lasers with integrated electroabsorption modulators using strained‐InGaAsP multiple quantum wells is described. The electroabsorption modulator acts as a short optical gate when a sinusoidal voltage is driven at a deep bias point. Pulse widths as short as 2 ps have been obtained at a repetition rate of 16.3 GHz for a 2.5‐mm‐long monolithic laser.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Accurate multiple‐quantum‐well growth using real‐time optical flux monitoring

S. A. Chalmers, K. P. Killeen, and E. D. Jones

Appl. Phys. Lett. 65, 4 (1994); http://dx.doi.org/10.1063/1.113070 (3 pages) | Cited 11 times

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We report a real‐time molecular beam epitaxy control system based on optical flux monitoring (OFM) that is capable of producing thin AlAs/GaAs layers of accurate thickness. We demonstrate the system’s ability to detect and compensate for growth rate variations by growing AlAs/GaAs multi‐quantum‐well structures while deliberately ramping the GaAs growth rate to simulate a severe effusion cell instability. Results show that a sample grown under these conditions without OFM control (i.e., while using conventional timed shutter control) exhibited multiple photoluminescence peaks, indicating that its quantum wells differed in thickness, while a sample grown using OFM shutter control exhibited a single narrow peak, indicating that its quantum wells were nearly identical in width. Analysis of the OFM shutter control sample’s photoluminescence linewidth shows that the resulting quantum‐well thickness variation were less than 1%.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors

Electro‐optic modulation using asymmetric Fabry–Perot laser diode amplifiers

N. F. Mitchell, J. O’Gorman, J. Hegarty, and J. C. Connolly

Appl. Phys. Lett. 65, 7 (1994); http://dx.doi.org/10.1063/1.113081 (3 pages) | Cited 1 time

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We report the use of laser diode amplifiers, whose facets have unequal mirror reflectivities, as asymmetric Fabry–Perot modulators. Due to the presence of optical gain in these devices we observe modulation of reflected light with both large absolute modulation depth and high contrast ratio.
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42.79.Hp Optical processors, correlators, and modulators
42.55.Px Semiconductor lasers; laser diodes
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Band discontinuities in the (Pb,Eu)Se system determined by frequency‐dependent admittance analysis

J. Xu, K. Steiner, and M. Tacke

Appl. Phys. Lett. 65, 10 (1994); http://dx.doi.org/10.1063/1.113050 (3 pages) | Cited 5 times

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Band discontinuities in anisotype Pb1−xEuxSe/PbSe single heterojunctions are determined using frequency‐dependent admittance analysis. A four component small signal equivalent circuit model is proposed to describe the diode admittance. Good agreement between the simulation results and experimental data have been obtained. The band discontinuities are evaluated at 130 K for x<0.05.
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73.61.Ga II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Fabrication of praseodymium‐doped arsenic sulfide chalcogenide fiber for 1.3‐μm fiber amplifiers

Yasutake Ohishi, Astushi Mori, Terutoshi Kanamori, Kazuo Fujiura, and Shoichi Sudo

Appl. Phys. Lett. 65, 13 (1994); http://dx.doi.org/10.1063/1.113056 (3 pages) | Cited 28 times

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Pr3+‐doped As‐S chalcogenide fiber is fabricated using a double‐crucible method. The thermal and spectroscopic properties of Pr3+‐doped As‐S glasses are clarified. Pr3+‐doped As‐S fiber is shown to be a promising candidate that will lead to efficient Pr3+‐doped fiber amplifiers.
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42.70.Ce Glasses, quartz
42.70.Hj Laser materials
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Wd Fiber lasers

Diffraction from optically written persistent plasma gratings in doped compound semiconductors

Richard A. Linke, Tineke Thio, James D. Chadi, and George E. Devlin

Appl. Phys. Lett. 65, 16 (1994); http://dx.doi.org/10.1063/1.113057 (3 pages) | Cited 49 times

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We propose and demonstrate a new type of optical nonlinearity based on the properties of the DX center in doped compound semiconductors. We report measurements on samples of AlGaAs:Si which were exposed to interfering laser beams and find diffraction from a large, persistent refractive index change associated with the well‐known persistent photoconductivity effect in this material. The new effect is shown to exhibit a refractive index change 30 times larger than that of conventional photorefractive materials. We explain the origin of the refractive index change in terms of the plasma effect and show that its expected magnitude is consistent with our observations.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
72.40.+w Photoconduction and photovoltaic effects
42.65.Pc Optical bistability, multistability, and switching, including local field effects
71.55.Eq III-V semiconductors

Differential optical PnpN switch operating at 16 MHz with 250‐fJ optical input energy

P. Heremans, M. Kuijk, R. Vounckx, and G. Borghs

Appl. Phys. Lett. 65, 19 (1994); http://dx.doi.org/10.1063/1.113058 (3 pages) | Cited 15 times

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We present an optoelectronic switch with exceptional optical sensitivity (250 fJ) operating at high speed (16 MHz). The switch consists of a differential pair of optical PnpN devices. Its excellent optical sensitivity directly ensues from the differential switching principle. The operation speed results from the use of a specially conceived PnpN layer structure, called the depleted optical thyristor, in combination with a particular operation cycle. The performance of our switch corresponds to an improvement of about five orders of magnitude in speed for comparable sensitivity, and of two orders of magnitude in optical sensitivity for the given speed as compared to that of conventional PnpN switches.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
85.60.-q Optoelectronic devices
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Experimental study on operation at room temperature of transverse flow carbon monoxide laser excited by radio frequency discharge

Minoru Uehara and Hirotaka Kanazawa

Appl. Phys. Lett. 65, 22 (1994); http://dx.doi.org/10.1063/1.113060 (3 pages) | Cited 3 times

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A high output and high conversion efficiency transverse flow carbon monoxide laser has been developed for operation at room temperature. The adoption of radio frequency discharge for excitation has permitted obtaining at room temperature (289 K), without xenon addition to the gas, a maximum output of 665 W at a conversion efficiency of the 10.7%. The output characteristics observed from the experiment are discussed, and the factors that effect laser output are considered.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.-v Laser optical systems: design and operation

Photoluminescence properties of Er3+‐doped BaTiO3 thin films

B. A. Block and B. W. Wessels

Appl. Phys. Lett. 65, 25 (1994); http://dx.doi.org/10.1063/1.113061 (3 pages) | Cited 25 times

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Er3+‐doped BaTiO3 thin films were grown on Si (100) by metalorganic chemical vapor deposition. Strong characteristic Er3+ intra‐4f shell emission at 0.80 eV is observed at 16 and 295 K. The Er3+ luminescence intensity is linearly dependent on the pump power. Photoluminescence lifetimes were found to be on the order of 8 ms. These results indicate that Er‐doped BaTiO3 has potential as an optically active, nonlinear waveguide medium.
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78.55.Hx Other solid inorganic materials
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.Nk Insulators

Production of uniform large‐diameter radio‐frequency discharge plasma

Yunlong Li, Satoru Iizuka, and Noriyoshi Sato

Appl. Phys. Lett. 65, 28 (1994); http://dx.doi.org/10.1063/1.113062 (3 pages) | Cited 12 times

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A new radio‐frequency (rf) discharge plasma source at frequency of 13.56 MHz is presented. The rf plasma is produced by a modified magnetron‐typed rf discharge using a cylindrical electrode with permanent magnet rings. The electron density of 2.5×1010 cm−3 with an electron temperature of 3.7 eV, uniform within a few percent over 50 cm in diameter, is obtained on both sides at 5–6 cm from the axial center of the rf electrode when the rf power is 600 W under argon pressure of 3.6×10−4 Torr.
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52.80.Pi High-frequency and RF discharges
52.50.Dg Plasma sources

Spatiotemporal characteristics determined by a relaxation continuum model of an inductively coupled plasma

Kenji Kondo, Hidehiko Kuroda, and Toshiaki Makabe

Appl. Phys. Lett. 65, 31 (1994); http://dx.doi.org/10.1063/1.113063 (3 pages) | Cited 15 times

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The use of an inductively coupled plasma (ICP) in material processing reactors is of relatively recent origin. A new theoretical model has been developed, based on a relaxation continuum (RCT) model for a collision dominated ICP. The spatiotemporal behavior of the ICP is investigated at 0.3 Torr and 13.56 MHz in Ar under the influence of electric and magnetic fields. It is demonstrated that the plasma is mainly sustained near the wall sheath during the phase when the external magnetic field becomes weak. It is also shown that the dominant mechanism of the power deposition in the ICP is caused by the electron motion under an azimuthal electric field.
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52.65.-y Plasma simulation
52.80.Pi High-frequency and RF discharges
52.50.Dg Plasma sources

Nitrogen stabilized 〈100〉 texture in chemical vapor deposited diamond films

R. Locher, C. Wild, N. Herres, D. Behr, and P. Koidl

Appl. Phys. Lett. 65, 34 (1994); http://dx.doi.org/10.1063/1.113064 (3 pages) | Cited 139 times

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We have studied the influence of nitrogen impurities in CH4/H2 gas mixtures on the structure and morphology of polycrystalline diamond films prepared by microwave plasma assisted chemical vapor deposition. The nitrogen concentration in the process gas was varied between 1 and 1000 ppm. Optical emission spectroscopy was applied to detect the nitrogen in the plasma via emission from CN radicals. The morphology and texture of polycrystalline films prepared with various N2 impurity levels and CH4 concentrations in the range 0.5%–2% was investigated using scanning electron microscopy and x‐ray texture analysis. For the films prepared with low methane concentrations (e.g., 0.5%) only a minor influence of the nitrogen was observed. However, most interestingly, for higher methane concentrations (1%–2%) the addition of small amounts of nitrogen turned out to have a tremendously beneficial effect on the film morphology and structure. Films prepared without additional nitrogen are of nanocrystalline structure and of minor quality, whereas films prepared with nitrogen concentrations in the range 10–100 ppm exhibit a pronounced 〈100〉 texture and a considerably improved crystalline quality as judged by Raman spectroscopy.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology

Hardness of TiO2‐MgF2 mixed films prepared by reactive ion‐assisted deposition

Rung‐Ywan Tsai

Appl. Phys. Lett. 65, 37 (1994); http://dx.doi.org/10.1063/1.113065 (3 pages) | Cited 2 times

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The hardness of TiO2‐MgF2 mixed films prepared by reactive ion‐assisted deposition is strongly related to their compositions and microstructures. Compositions and microstructures of these films are analyzed by the Rutherford backscattering microscopy and transmission electron microscopy, respectively. The hardening of the films with high TiO2 composition has been observed to result from the uniform distribution of small crystalline MgF2 dispersoids within the amorphous TiO2 matrix. The size of all the dispersoids is less than 20 nm. An empirical model is provided to explain the enhancement of hardness of these composite films.
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62.20.-x Mechanical properties of solids
68.60.-p Physical properties of thin films, nonelectronic
42.70.-a Optical materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Synthesis of nanometer glass particles by pulsed‐laser ablation of microspheres

Ching‐Bo Juang, Hong Cai, Michael F. Becker, John W. Keto, and James R. Brock

Appl. Phys. Lett. 65, 40 (1994); http://dx.doi.org/10.1063/1.113066 (3 pages) | Cited 14 times

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We describe a new method for producing ultrafine glass particles that employs pulsed‐laser particle ablation. Pulsed‐laser radiation with wavelength of 249 nm was used to ablate 8‐μm‐diam glass microspheres under normal atmospheric conditions. The ejected particles were collected on silicon substrates for further analysis. Scanning electron micrographs of the samples were analyzed by computer aided image processing to determine the effect of laser fluence on the particle size distribution. Results showed that mean particle diameter, in the range from 60 to 80 nm, was generally inversely proportional to laser fluence. The particle size distributions were closely log‐normal with small geometric standard deviations.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
79.20.Ds Laser-beam impact phenomena

Stress and crystallinity in 〈100〉, 〈110〉, and 〈111〉 oriented diamond films studied using Raman microscopy

Stephanie R. Sails, Derek J. Gardiner, Michael Bowden, James Savage, and Sajad Haq

Appl. Phys. Lett. 65, 43 (1994); http://dx.doi.org/10.1063/1.113067 (3 pages) | Cited 8 times

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Stress and crystallinity variations along the growth direction in three diamond films of different preferred orientations have been investigated using Raman microscopy to monitor the change in band center and full width at half maximum (FWHM) of the first‐order diamond phonon with distance along a single diamond crystal. The results showed a consistent trend for the 〈100〉 oriented film, with both the peak position and FWHM being largest close to the silicon substrate and decreasing along the direction of crystal growth. The 〈110〉 and 〈111〉 orientations showed random variation throughout.
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68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.60.-p Physical properties of thin films, nonelectronic
78.30.Hv Other nonmetallic inorganics

Graphite thin‐film formation by chemical‐vapor deposition of o‐methyl‐diaryl ketones

M. Yudasaka, R. Kikuchi, T. Matsui, Y. Ohki, S. Yoshimura, and E. Ota

Appl. Phys. Lett. 65, 46 (1994); http://dx.doi.org/10.1063/1.113068 (3 pages) | Cited 7 times

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Two kinds of o‐methyl‐diaryl ketones, 2,6‐di(2′,6′‐dimethyl‐1′‐naphthyl)‐naphthalene, (O), and 2‐methyl‐1,2′‐naphthyl ketone, (I), were used as starting materials for chemical‐vapor deposition (CVD). Raman‐scattering measurements and x‐ray diffraction analyses for the obtained films made it apparent that well‐crystallized graphite films could be grown on Ni substrate kept above 900 and 600 °C by using the materials (O) and (I), respectively. In order to obtain the crystalline graphite by CVD, the Ni substrate was necessary and the supply rate of the starting material must be in an optimum range. When the supply rate is too large, the obtained film contained the disordered graphite structure.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Atomic force microscopic study of rubbed polyimide films

Yang‐Ming Zhu, Lin Wang, Zu‐Hong Lu, Yu Wei, X. X. Chen, and J. H. Tang

Appl. Phys. Lett. 65, 49 (1994); http://dx.doi.org/10.1063/1.113069 (3 pages) | Cited 32 times

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Rubbed polyimide films have been studied by atomic force microscopy from micrometer to nanometer scales. On a large scale, oriented scratches and microstructures due to rubbing have been observed, while on a nanometer scale, oriented polyimide aggregates are visible. The alignment of liquid crystals on these films is thus discussed.
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61.30.-v Liquid crystals
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Early stages of void formation in Al‐Cu lines studied using positron annihilation

P. J. Simpson, M. T. Umlor, K. G. Lynn, and K. P. Rodbell

Appl. Phys. Lett. 65, 52 (1994); http://dx.doi.org/10.1063/1.113071 (3 pages) | Cited 1 time

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We have applied positron annihilation spectroscopy to examine the formation of voids in SiO2‐passivated 1 μm×1 μm Al‐0.5 wt. % Cu lines. Samples were heat‐treated both ex situ and in the positron beam to monitor void formation as a function of time and temperature. By measuring the fraction of 3‐γ annihilations (a sensitive indicator of large open volume defects) we have established that voids are present at the interface between the Al alloy lines and the SiO2 passivation before heat treatment. The 3‐γ fraction then grows to a maximum in less than 1 h at a temperature of 300 °C. Changes in the Doppler‐broadening S parameter are also observed. Studies are underway to apply the same methodology to investigate electromigration.
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61.72.Qq Microscopic defects (voids, inclusions, etc.)
85.40.Ls Metallization, contacts, interconnects; device isolation
68.60.Dv Thermal stability; thermal effects
66.30.Qa Electromigration

Characterization of polycrystalline Al and Cu metal films sputtered on SiO2/Si substrate using the Laue method with synchrotron x radiation

S. Yasuami, T. Takase, and K. Ohsumi

Appl. Phys. Lett. 65, 55 (1994); http://dx.doi.org/10.1063/1.113072 (3 pages)

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Reflection spots from granular aluminum and copper films were recorded on imaging plates. By comparing the reflection spots with the overall illuminated area, it was estimated that the aluminum granules were several microns in dimensions. The copper granules were much smaller. The spots spread and exhibited contrast, proving that stress was present in the aluminum granules. Assuming constant lattice parameters, the orientation shift between specific points in a single granule was determined to be around half a degree. It is highly likely that the granules have suffered plastic deformation.
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61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
61.72.Mm Grain and twin boundaries
68.60.-p Physical properties of thin films, nonelectronic

Hydrogen passivation of dislocations in InP on GaAs heterostructures

B. Chatterjee, S. A. Ringel, R. Sieg, R. Hoffman, and I. Weinberg

Appl. Phys. Lett. 65, 58 (1994); http://dx.doi.org/10.1063/1.113073 (3 pages) | Cited 17 times

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The effects of hydrogenation on the properties of Zn‐doped InP/GaAs heterostructures grown by metalorganic chemical vapor deposition were studied by current‐voltage (I‐V), deep level transient spectroscopy (DLTS), and photoluminescence. Significant improvements in leakage current and breakdown voltage in InP diodes on GaAs were observed after a 2 h hydrogen plasma exposure at 250 °C. DLTS indicated a corresponding reduction in total trap concentration from ∼6×1014 to ∼3×1012 cm−3 at a depth of ∼1.5 μm below the surface. The Zn dopants were completely reactivated by a subsequent 5 min 400 °C anneal without degradation of the reverse current or reactivation of the deep levels. Anneals in excess of 580 °C were necessary to reactivate the deep levels and degrade the leakage current to their original values, indicating the passivation of threading dislocations by hydrogen, and the existence of a wide temperature window for post‐passivation processing.
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72.80.Ey III-V and II-VI semiconductors
73.61.Ey III-V semiconductors
71.55.Eq III-V semiconductors
81.65.-b Surface treatments

Microstructure and photoluminescence of GaN grown on Si(111) by plasma‐assisted molecular beam epitaxy

A. Ohtani, K. S. Stevens, and R. Beresford

Appl. Phys. Lett. 65, 61 (1994); http://dx.doi.org/10.1063/1.113074 (3 pages) | Cited 56 times

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Wurtzite GaN films on AlN buffer layers were grown on Si(111) by plasma‐assisted molecular beam epitaxy. High resolution x‐ray diffraction and scanning electron microscope studies indicate that the mosaic disorder decreases with increasing film thickness and increasing growth temperature. The grain size increases with the growth temperature. The best (0002) diffraction peak full width at half‐maximum is 22 arcmin for a film 1.7 μm thick. Prominent low‐temperature exciton luminescence is observed at 3.46 eV. The plasma I‐V characteristics are measured with a Langmuir probe near the growth position and analyzed to extract the nitrogen ion density and energy for the growth conditions used.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

High quality AlxGa1−xN grown by metalorganic chemical vapor deposition using trimethylamine alane as the aluminum precursor

M. Asif Khan, D. T. Olson, and J. N. Kuznia

Appl. Phys. Lett. 65, 64 (1994); http://dx.doi.org/10.1063/1.113075 (3 pages) | Cited 14 times

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We report the first low pressure (76 Torr) metalorganic chemical vapor deposition of AlxGa1−xN using trimethylamine alane (TMAAl) as the aluminum source. AlxGa1−xN epilayers deposited using TMAAl exhibited an excellent surface morphology and very strong room temperature photoluminescence. For AlN layers (using TMAAl as the aluminum precursor) we obtained a total carbon contamination level as low as 1017 cm−3.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors

Boron and aluminum implantation in α‐SiC

S. Ahmed, C. J. Barbero, T. W. Sigmon, and J. W. Erickson

Appl. Phys. Lett. 65, 67 (1994); http://dx.doi.org/10.1063/1.113076 (3 pages) | Cited 8 times

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In this letter, we report the comparison of experimental implantation profiles in 6Hα‐silicon carbide (SiC) with the theoretical results obtained using the widely used trim profile simulator. Our results for the projected range of Al and B implanted into this material agree well with those predicted by trim, in contrast to previously published results. Profiles for 40–250 keV Al and B implantation, off‐crystal axis to minimize channeling in SiC, are obtained using secondary ion mass spectroscopy. The Pearson I and VI theoretical profiles, constructed using the first four moments of the distribution generated by the trim simulator, are then compared to the experimental ones.
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61.80.Jh Ion radiation effects
61.72.up Other materials

Background limited infrared performance of n‐type Si‐SiGe(111) quantum well infrared photodetector

V. D. Shadrin

Appl. Phys. Lett. 65, 70 (1994); http://dx.doi.org/10.1063/1.113077 (3 pages) | Cited 1 time

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The quantum well infrared photodetector (QWIP), based on n‐type Si‐SiGe structures grown in [111] crystallographic direction, possesses low dark current performance in a wide range of impurity doping concentrations. In addition, when compared to GaAs‐AlGaAs QWIP, it has an enhanced photoabsorption efficiency. The background limited infrared performance (BLIP) is analyzed theoretically for both n‐Si‐SiGe(111) and GaAs‐AlGaAs QWIPs. The BLIP temperature drop which is due to the Fermi level rise associated with an increase in the doping impurity concentration, is found to begin at higher concentration in n‐Si‐SiGe than in GaAs‐AlGaAs QWIPs. The concentration dependency of the QWIP performance characteristics in BLIP is compared for n‐Si‐SiGe and GaAs‐AlGaAs.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
78.30.Hv Other nonmetallic inorganics
73.50.Pz Photoconduction and photovoltaic effects

Temperature dependence of the photoluminescence intensity of ordered and disordered In0.48Ga0.52P

J. D. Lambkin, L. Considine, S. Walsh, G. M. O’Connor, C. J. McDonagh, and T. J. Glynn

Appl. Phys. Lett. 65, 73 (1994); http://dx.doi.org/10.1063/1.113078 (3 pages) | Cited 44 times

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The integrated photoluminescence (PL) intensities of both ordered and disordered epilayers of InGaP grown on GaAs have been measured as a function of temperature. The highest PL efficiency occurs in the most disordered sample. We find that the PL intensities can drop from 2 to almost 4 orders of magnitude between 12 and 280 K. The samples show an Arrhenius behavior characterized by two activation energies. Below 100 K the activation energies lie in the region of 10–20 meV. Above 100 K the activation energy is approximately 50 meV except in the most disordered sample where it increases to 260 meV. We conclude that the low‐temperature PL efficiency is most likely controlled by carrier thermalization from spatial fluctuations of the band edges followed by nonradiative recombination. At higher temperatures the PL efficiency is dominated by a nonradiative path whose characteristic activation energy and transition probability depend upon the degree of sublattice ordering.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
71.55.Eq III-V semiconductors
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