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5 Sep 1994

Volume 65, Issue 10, pp. 1205-1323

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Novel ‘‘serially grafted’’ connection between functional and passive polymer waveguides

Toshio Watanabe, Michiyuki Amano, Makoto Hikita, Yoshito Shuto, and Satoru Tomaru

Appl. Phys. Lett. 65, 1205 (1994); http://dx.doi.org/10.1063/1.112948 (3 pages) | Cited 12 times

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A serially grafted connection between polymer waveguides is realized. This technique allows a passive polymer waveguide to be connected to a functional polymer waveguide with a connection loss of 0.005 dB. It is also applied to a Mach–Zehnder modulator using an electro‐optic polymer, and optical intensity modulation in the serially grafted modulator is successfully demonstrated.
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42.82.Ds Interconnects, including holographic interconnects
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators

Laser demonstration of neodymium‐doped strontium chlorovanadate

Laura D. DeLoach, Stephen A. Payne, Bruce H. T. Chai, and George Loutts

Appl. Phys. Lett. 65, 1208 (1994); http://dx.doi.org/10.1063/1.112072 (3 pages) | Cited 6 times

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Nd:Sr5(VO4)3Cl has been successfully lased using a Ti:sapphire pump laser operating at 810 nm. A slope efficiency of 52% for the 1.065 μm laser line and a lasing threshold of only a few tens of milliwatts have been measured. These favorable results are comparable to another Nd‐doped vanadate apatite, Sr5(VO4)3F. A brief survey of the spectroscopy of Nd3+ in Sr5(VO4)3Cl, Sr5(VO4)3F, and Ca5(VO4)3F reveals properties which suggest the vanadate‐based apatite crystals as a whole may represent a useful new class of Nd‐laser hosts.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Hj Laser materials

Low operating current self‐sustained pulsation GaAlAs laser diodes with a real refractive index guided structure

T. Takayama, O. Imafuji, H. Sugiura, M. Yuri, H. Naito, M. Kume, A. Yoshikawa, and K. Itoh

Appl. Phys. Lett. 65, 1211 (1994); http://dx.doi.org/10.1063/1.112073 (2 pages) | Cited 5 times

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We have developed a new real refractive index guided GaAlAs laser which satisfies both low operating current and low noise characteristics by self‐sustained pulsation. The structure has a planar active layer and a GaAlAs optical confinement layer which give large saturable absorber, and small internal loss. As a result, as operating current as low as 19.7 mA at an output power of 3 mW is obtained under self‐sustained pulsation, leading to a relative intensity noise level less than −135 dB/Hz.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Photorefractive effect in Bi12SiO20:Cr crystals at 633 nm

T. S. Yeh, W. J. Lin, I. N. Lin, L. J. Hu, S. P. Lin, S. L. Tu, C. H. Lin, and S. E. Hsu

Appl. Phys. Lett. 65, 1213 (1994); http://dx.doi.org/10.1063/1.112074 (3 pages) | Cited 2 times

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Pure and Cr2O3‐doped Bi12SiO20 (BSO) single crystals have been successfully grown using Czochralski technique. Doping 30 ppm of Cr2O3 into BSO single crystals has lowered the transmittance and increased the photochromic effect of the materials significantly. Although the overall diffraction efficiency of photorefractive effect in response to 633 nm laser beam has not been increased, the intrinsic diffraction efficiency (ηi) and the response time constant (τ) have been improved markedly. The applicability of the BSO crystals in the red light regime is thus increased.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Control of chaos in a CO2 laser

J. M. Perez, J. Steinshnider, R. E. Stallcup, and A. F. Aviles

Appl. Phys. Lett. 65, 1216 (1994); http://dx.doi.org/10.1063/1.112075 (3 pages) | Cited 3 times

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We report the experimental control of chaos in an optically modulated CO2 laser. The CO2 laser was driven into chaos by injecting a feedback beam modulated by an electro‐optical modulator. Control of chaos was achieved using a modified proportional feedback technique in which the control pulses were delayed by approximately one relaxation period. Using this technique, it was possible to control unstable periodic orbits up to period 6.  
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42.60.Mi Dynamical laser instabilities; noisy laser behavior
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Nonlinear mechanisms in microwave photodetectors operated with high intrinsic region electric fields

Keith J. Williams

Appl. Phys. Lett. 65, 1219 (1994); http://dx.doi.org/10.1063/1.112076 (3 pages) | Cited 11 times

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Measurements and simulations to determine the contributing nonlinear mechanisms in microwave photodetectors operated with high intrinsic region electric fields are presented. An important component of the nonlinear behavior is attributed to absorption in undepleted material adjacent to the depletion region, limiting the attainable device linearity. With as little as 10 nm of undepleted absorbing material, the second harmonic of a 5 GHz fundamental frequency at 1 mA of average detector current can be −60 dBc. Linearity improvements up to 50 dB should be possible if photodetectors can be fabricated with strictly depleted absorbing regions.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.20.Ht High-field and nonlinear effects
72.40.+w Photoconduction and photovoltaic effects

Epitaxial growth of C60 and KI(001) surface

H. Yanagi and T. Sasaki

Appl. Phys. Lett. 65, 1222 (1994); http://dx.doi.org/10.1063/1.112949 (2 pages) | Cited 11 times

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Epitaxial growth of C60 is observed for vacuum‐deposited crystals on the KI(001) cleavage surface. When the KI surface is kept at 240 °C and the deposition rate is controlled to be less than a monolayer min−1 (∼0.5 nm min−1), rectangular platelike crystals of C60 grow epitaxially. Transmission electron micrographs and electron diffraction patterns of the crystals exhibit that the (002) planes of the face‐centered cubic C60 crystal orient in parallel to the KI(001) surface. This epitaxial orientation is explained in terms of thec(2×2) commensurate lattice matching.
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68.55.-a Thin film structure and morphology

Structure determination of very thin epitaxial layers of metastable body centered cubic Co with ion channeling

J. Dekoster, H. Bemelmans, J. De Wachter, R. Moons, and G. Langouche

Appl. Phys. Lett. 65, 1224 (1994); http://dx.doi.org/10.1063/1.112077 (3 pages) | Cited 5 times

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The structure of a 20 Å thin Co layer embedded between Fe layers grown with molecular beam epitaxy on MgO is determined with ion beam channeling. From the position and the ratio of the widths of the angular yield profiles for different crystallographic directions, we show that Co is forced in the metastable body centered cubic structure. The presence of tetragonal distortion in the Co layer is observed.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Sm2+‐doped silicate glasses prepared by a sol‐gel process

M. Nogami and Y. Abe

Appl. Phys. Lett. 65, 1227 (1994); http://dx.doi.org/10.1063/1.112078 (3 pages) | Cited 15 times

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Silicate glasses, Al2O3⋅9SiO2, were successfully prepared to incorporate Sm2+ ions using a sol‐gel process. The glasses synthesized through hydrolysis of Si(OC2H5)4, Al(OC4H9)3, and SmCl3⋅6H2O were heated in air, followed by heating in the presence of hydrogen, in which samarium ions were reduced from the trivalent to divalent state. Glasses incorporated with Sm2+ were colorless, transparent, and showed an intense emission with peaks at 683, 700, and 725 nm due to 5D0→7F0,1,2 transitions, respectively, of the Sm2+ ions. Irradiating the glasses with an Ar laser lowered the intensities of emission from Sm2+ ions and did not promote the formation of Sm3+ ions.
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78.55.Hx Other solid inorganic materials
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.70.Ce Glasses, quartz

Composition modulation in lattice matched Zn1−xMgxSySe1−y/ZnSe buffer layer/GaAs heterostructures

L. H. Kuo, L. Salamanca‐Riba, B. J. Wu, J. M. DePuydt, G. M. Haugen, H. Cheng, S. Guha, and M. A. Haase

Appl. Phys. Lett. 65, 1230 (1994); http://dx.doi.org/10.1063/1.112079 (3 pages) | Cited 12 times

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[100] composition modulation as well as [101] and [101] tweed strain contrast were observed in lattice matched Zn1−xMgxSySe1−y epitaxial films grown on ZnSe buffer layers. The composition modulation corresponds to regions with different S and Mg concentration in a direction perpendicular to the growth direction. Very high quality lattice matched Zn1−xMgxSySe1−y films with a ZnSe quantum well were grown on As stabilized GaAs substrates exposed to Zn for a short time. The density of defects in these samples was less than 5×104/cm2. Other samples showed rough interfaces and high densities of Frank partial dislocations. The roughness is believed to result from an As‐rich GaAs surface produced after the desorption of oxide under As overpressure.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

New lead‐free, Sn‐Ag‐Zn‐Cu solder alloy with improved mechanical properties

M. McCormack, G. W. Kammlott, H. S. Chen, and S. Jin

Appl. Phys. Lett. 65, 1233 (1994); http://dx.doi.org/10.1063/1.112080 (3 pages) | Cited 13 times

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A new, lead‐free solder alloy based on Sn‐3.5%Ag‐1%Zn‐0.5%Cu is described. The alloy exhibits mechanical properties superior to those in both the Sn‐3.5%Ag binary and Sn‐3.5%Ag‐1%Zn ternary eutectic solder alloys. The addition of small amounts of Cu, at less than 1% levels, is found to refine the effective grain size while retaining the uniform distribution of Ag3Sn precipitates in the solidification microstructure, thus significantly improving the ductility. The addition of excess amounts of Cu or Zn beyond about 1% levels is not desirable as it causes precipitation of additional intermetallic phases that depletes the finely dispersed precipitates in the surrounding matrix and induces nonuniformities in the microstructure that consequently deteriorate the mechanical properties.
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62.20.-x Mechanical properties of solids
81.40.Lm Deformation, plasticity, and creep
81.30.Mh Solid-phase precipitation

Determination of the composition and thickness of borophosphosilicate glass films by infrared ellipsometry

R. Ossikovski, N. Blayo, B. Drévillon, M. Firon, B. Delahaye, and A. Mayeux

Appl. Phys. Lett. 65, 1236 (1994); http://dx.doi.org/10.1063/1.112081 (3 pages) | Cited 1 time

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A quantitative analysis of IR ellipsometry spectra of borophosphosilicate glass (BPSG) thin films deposited on silicon wafers is presented. The film thickness is determined with a standard deviation of 5.8 nm using a fitting procedure based on only two free parameters. A simple linear analysis of the dependence of the ellipsometric measurements upon film composition provides standard deviations of 0.04 and 0.12 wt % on boron and phosphorus content, respectively.
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68.55.-a Thin film structure and morphology
78.66.Nk Insulators
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
07.60.Fs Polarimeters and ellipsometers

Experimental study of implantation‐induced disordering in InGaAsP strained multiple‐quantum‐well heterostructures

B. B. Elenkrig, D. A. Thompson, J. G. Simmons, D. M. Bruce, Yu. Si, Jie Zhao, J. D. Evans, and I. M. Templeton

Appl. Phys. Lett. 65, 1239 (1994); http://dx.doi.org/10.1063/1.112082 (3 pages) | Cited 11 times

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The effect of strain on F+ and Si+ implantation‐induced compositional disordering in InGaAsP strained layer multiple‐quantum‐well (MQW) heterostructures has been studied by investigating the temperature dependence of the photoluminescence (PL) spectra and spatial distribution of degree of polarization of PL for both compressive and tensile strained, and unstrained MQW heterostructures. It was found that under similar implantation and anneal conditions a spectral blueshift occurs which is largest in the compressively strained structure and the smallest in the tensile one. This behavior is explained in terms of implantation‐enhanced interdiffusion, by taking into account the composition differences of elements between the wells and barriers. The development of strain related to the process of interdiffusion has been experimentally observed.
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61.80.Jh Ion radiation effects
78.55.Cr III-V semiconductors

Normally‐on GaAs/AlAs multiple‐quantum‐well Fabry–Perot reflection modulators for large two‐dimensional arrays

Chih‐Hsiang Lin, K. W. Goossen, K. Sadra, and J. M. Meese

Appl. Phys. Lett. 65, 1242 (1994); http://dx.doi.org/10.1063/1.112083 (3 pages) | Cited 5 times

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We report normal‐incident normally‐on 90 Å GaAs/21 Å AlAs multiple‐quantum‐well Fabry–Perot reflection modulators operating at the same wavelength with the same reverse bias over much of a 2 in. wafer. The fabricated modulators achieve ON/OFF reflectance changes larger than 48% and ON/OFF contrast ratios larger than 14.7 over a diameter of 31 mm at the wavelength of 845 nm with a fixed bias of 7 V. Over a diameter of 40 mm, these modulators achieve reflectance changes larger than 43.2% and contrast ratios larger than 5.
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42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors

Light induced electron spin resonance in porous silicon

W. E. Carlos and S. M. Prokes

Appl. Phys. Lett. 65, 1245 (1994); http://dx.doi.org/10.1063/1.112084 (3 pages) | Cited 12 times

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We report on the observation of a new metastable light induced defect center in porous silicon which has a g tensor with 〈110〉 symmetry and which is similar to the thermal donor, NL8, seen in thermally annealed Si. The optical response has an onset in the vicinity of the Si indirect band gap. The time dependence of the response has a sharp rise followed by a nearly saturated regime. Changing to a higher photon energy then results in another marked increase in the response. We suggest that this dependence of the absorption on excitation energy reflects the distribution of crystallite sizes. We observe that near ultraviolet light significantly bleaches the signal.
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71.55.Cn Elemental semiconductors
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
78.55.Hx Other solid inorganic materials

Modulation‐doped n‐type Si/SiGe with inverted interface

K. Ismail, J. O. Chu, K. L. Saenger, B. S. Meyerson, and W. Rausch

Appl. Phys. Lett. 65, 1248 (1994); http://dx.doi.org/10.1063/1.112085 (3 pages) | Cited 14 times

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We report the growth of n‐type modulation‐doped Si/SiGe with the doped SiGe supply layer underneath the strained Si channel. The mobility and charge density are measured in samples with 2‐ and 3‐nm‐thick spacers using gated Hall measurements. A peak room temperature mobility of 2200 cm2/V s is measured at a sheet density of 2.5×1012 cm−2. The measurements indicate a clear mobility modulation especially near threshold. Our layer design allows the gate to induce a sheet charge density of up to 3.2×1012 cm−2, before any significant reduction in the mobility is observed.  
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73.50.Dn Low-field transport and mobility; piezoresistance
85.30.Tv Field effect devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions

Observation of near‐band‐gap luminescence from boron nitride films

C. A. Taylor, S. W. Brown, V. Subramaniam, S. Kidner, S. C. Rand, and R. Clarke

Appl. Phys. Lett. 65, 1251 (1994); http://dx.doi.org/10.1063/1.112086 (3 pages) | Cited 33 times

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We report results from cathodoluminescence spectroscopy of boron nitride films grown on Si(100) substrates by ion‐source‐assisted magnetron sputtering of a hexagonal BN target. Three main peaks are observed in the near‐band‐gap region for hexagonal boron nitride films at energies of 4.90, 5.31, and 5.50 eV. We also report deep‐level emission spectra of predominantly cubic boron nitride films which are correlated with sample growth conditions. In particular we show that the emission intensity, position, and linewidth are strongly dependent on the substrate bias voltage used during sample growth.
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78.66.Fd III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Cd Deposition by sputtering

Giant photoluminescence enhancement in deuterated highly strained InAs/GaAs quantum wells

A. Polimeni, D. Marangio, M. Capizzi, A. Frova, and F. Martelli

Appl. Phys. Lett. 65, 1254 (1994); http://dx.doi.org/10.1063/1.112087 (3 pages) | Cited 15 times

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The photoluminescence of InAs/GaAs pseudomorphic single quantum wells, of width 1, 1.2, and 1.6 monolayers, is studied before and after diffusion of monoatomic deuterium into the samples. The luminescence shows a red shift for increasing nominal well width, suggesting an interface roughness on a scale much smaller than the exciton size. The luminescence efficiency increases by several orders of magnitude after sample deuteration. A discussion about the origin of radiative recombination in these heterostructures, before and after deuteration, is also given.
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78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors
61.72.Yx Interaction between different crystal defects; gettering effect

On the generation of interface states from electron‐hole recombination in metal‐oxide‐semiconductor capacitors

D. A. Buchanan

Appl. Phys. Lett. 65, 1257 (1994); http://dx.doi.org/10.1063/1.113008 (3 pages) | Cited 15 times

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In this study, we have measured the interface state generation rate resulting from the recombination of free electrons and trapped holes, which occurs either away from or near the silicon/silicon dioxide interface. For recombination events that occur away from the silicon/silicon dioxide interface (by using hole trapping on bulk‐oxide ion‐implanted arsenic sites), we find an interface state generation rate of approximately 0.024 states per recombination event. For recombination near the silicon/silicon dioxide, the generation rate increases by more than an order of magnitude to approximately 0.27 states per event. Therefore, interface states are more readily produced from electron/hole recombination events that occur near the Si/SiO2 interface.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
85.30.Tv Field effect devices

In situ microwave reflectivity measurements of the changes in surface recombination of crystalline silicon induced by the exposure to silane, silane/helium, and helium plasmas

H. C. Neitzert, N. Layadi, P. Roca i Cabarrocas, and R. Vanderhaghen

Appl. Phys. Lett. 65, 1260 (1994); http://dx.doi.org/10.1063/1.112088 (3 pages) | Cited 2 times

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Measurements of the transient photoconductivity detected via the change in microwave reflection after laser pulse illumination have been performed during the exposure of crystalline silicon substrates to a pure silane, silane/helium, and pure helium plasma. In all cases, a similar increase of the surface recombination rate is detected immediately after plasma start. While the surface recombination remains high in the case of the pure helium plasma, a decrease of the interface recombination is observed for the pure silane and silane/helium plasma, related to the deposition of hydrogenated amorphous silicon.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.25.+i Surface conductivity and carrier phenomena
81.65.-b Surface treatments

Improving the mobility of an In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure by inserting a strained InAs quantum well

Tatsushi Akazaki, Junsaku Nitta, Hideaki Takayanagi, Takatomo Enoki, and Kunihiro Arai

Appl. Phys. Lett. 65, 1263 (1994); http://dx.doi.org/10.1063/1.112089 (3 pages) | Cited 24 times

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The mobility of two‐dimensional electrons in an In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure improved by inserting an InAs quantum well into the InGaAs channel. This letter addresses the main cause of this mobility improvement. By optimizing the thickness of the InAs quantum well, its distance from the underlying InAlAs spacer layer, and the InAlAs spacer‐layer thickness, maximum mobilities of 16 500 cm2/V s at 300 K and 155 000 cm2/V s at 10 K are attained. The improvement in mobility is attributed to a decrease in scattering caused by ionized impurities, interface‐roughness, and trap impurities. This decrease is a result of the superior confinement of two‐dimensional electron gas in the InAs quantum well.
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73.50.Dn Low-field transport and mobility; piezoresistance
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Generalized relationship between gain, noise, and capture probability of quantum well infrared photodetectors

K. K. Choi

Appl. Phys. Lett. 65, 1266 (1994); http://dx.doi.org/10.1063/1.112090 (3 pages) | Cited 12 times

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We show that due to the discrete nature of multiple quantum well structures, the decay function of an energetic electron depends on the spatial extent of the electron wave function. As a result, the current gain of a quantum well infrared photodetector (QWIP) cannot be uniquely specified by the single well capture probability pc. Specifically, for a given pc the current gain of an extended state electron is found to be larger than that of a localized electron. Consequently, for a typical QWIP, it is possible that the photocurrent gain is larger than the dark current gain, resulting in a reduction of dark current induced generation‐recombination noise from its expected value.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.70.+m Noise processes and phenomena
72.40.+w Photoconduction and photovoltaic effects
73.40.-c Electronic transport in interface structures

Magnesium doping of InGaAlP grown by low‐pressure metalorganic chemical vapor deposition

Chang‐Cherng Wu, Chun‐Yen Chang, Po‐An Chen, Horng‐Dar Chen, Kun‐Chuan Lin, and Shih‐Hsiung Chan

Appl. Phys. Lett. 65, 1269 (1994); http://dx.doi.org/10.1063/1.112091 (3 pages)

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Bis(cyclopentadienyl) magnesium, CP2Mg, was used as a magnesium dopant in the InGaAlP layers by low‐pressure metalorganic chemical vapor deposition. The hazy surface morphology of heavily doped InGaAlP layers is significantly improved by using magnesium dopant instead of the conventional zinc dopant. We demonstrate that the effective doping efficiency of magnesium is two orders of magnitude higher than that of zinc dopant in the heavily doped InGaAlP layer grown at 720 °C.
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61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology

Efficient blue electroluminescence from a fluorinated polyquinoline

I. D. Parker, Q. Pei, and M. Marrocco

Appl. Phys. Lett. 65, 1272 (1994); http://dx.doi.org/10.1063/1.112092 (3 pages) | Cited 114 times

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High efficiency blue electroluminescence is demonstrated from a polyquinoline ether, a new class of soluble, electroluminescent, polyaromatic polymer. Multilayer devices (consisting of hole and electron transport layers in addition to the emissive polyquinoline layer) show an internal quantum efficiency in excess of 4% at 450 nm. Light emitted from these devices is easily visible in room light with luminence levels of 30 cd/m2 at 55 V with a current density of 9 mA/cm2. The transport layers are shown to serve a dual function—to modify the carrier injection properties and to block passage of carriers of the opposite polarity thereby trapping carriers in the emissive layer.
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices

Suppression of Zn diffusion due to hydrogen passivation in p ‐AlGaInP

Akihiko Ishibashi, Masaya Mannoh, Isao Kidoguchi, Yuzaburoh Ban, and Kiyoshi Ohnaka

Appl. Phys. Lett. 65, 1275 (1994); http://dx.doi.org/10.1063/1.112093 (3 pages) | Cited 2 times

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The behaviors of Zn acceptors in p‐AlGaInP layer during thermal annealing in AsH3+H2 mixture gas have been investigated. The electrical activities of Zn acceptors were greatly affected by the hydrogen atoms originating from AsH3 during thermal annealing. In addition, from observation of the atomic disordering, hydrogen passivation of Zn acceptors was found to suppress the atomic diffusion. These phenomena can be consistently explained by a simple hydrogen passivation model, which is the termination of dangling bonds by hydrogen atoms.  
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66.30.J- Diffusion of impurities
61.72.uj III-V and II-VI semiconductors
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