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3 Oct 1994

Volume 65, Issue 14, pp. 1733-1852

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Corona poling of nonlinear polymer thin films for electro‐optic modulators

R. A. Hill, A. Knoesen, and M. A. Mortazavi

Appl. Phys. Lett. 65, 1733 (1994); http://dx.doi.org/10.1063/1.112899 (3 pages) | Cited 11 times

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We have developed an experimental technique for corona poling a nonlinear polymer thin film for use in electro‐optic modulators. This method eliminates the pinhole and surface roughness damage that has been observed when corona poling a nonlinear polymer deposited on a conducting substrate. Electro‐optic modulators have been constructed to compare this corona poling technique to the contact poling technique commonly used with electro‐optic devices. Experimental results are presented that demonstrate that the corona poled electro‐optic devices were poled with electric fields near the dielectric breakdown of the thin polymer films—fields that are often difficult to achieve with contact poling. © 1994 American Institue of Physics.
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42.70.Jk Polymers and organics
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects

Response function for gain and refractive index dynamics in active semiconductor waveguides

J. Mørk and A. Mecozzi

Appl. Phys. Lett. 65, 1736 (1994); http://dx.doi.org/10.1063/1.112900 (3 pages) | Cited 22 times

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Based on semiclassical density matrix equations, we derive a simple analytical expression for the pump‐probe response function of an active semiconductor optical waveguide. The results are in good agreement with published pump‐probe measurements of gain and refractive index dynamics in laser amplifiers. In particular, an experimentally observed delay in carrier heating is explained, and spectral effects not previously considered are shown to be significant under typical experimental conditions. © 1994 American Institue of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics
42.55.Px Semiconductor lasers; laser diodes

Femtosecond measurement of nonlinear absorption and refraction in CdS, ZnSe, and ZnS

Todd D. Krauss and Frank W. Wise

Appl. Phys. Lett. 65, 1739 (1994); http://dx.doi.org/10.1063/1.112901 (3 pages) | Cited 60 times

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The nonlinear index of refraction and the two‐photon absorption coefficient of CdS, ZnSe, and ZnS were measured using the Z‐scan technique with 100‐femtosecond pulses at 610 nm, 780 nm, and 1.27 μm. The results are in reasonable agreement with measurements made at similar wavelengths with longer pulses. A simple theoretical model accounts for the dispersion of the nonlinearities and confirms their electronic nature. © 1994 American Institue of Physics.
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78.47.-p Spectroscopy of solid state dynamics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Assessment of single crystal p‐toluene sulfonate as an all‐optical switching material at 1.3 μm

Dug. Y. Kim, Brian L. Lawrence, William E. Torruellas, George I. Stegeman, G. Baker, and J. Meth

Appl. Phys. Lett. 65, 1742 (1994); http://dx.doi.org/10.1063/1.112902 (3 pages) | Cited 8 times

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We evaluate the potential of single crystal PTS (p‐toluene sulfonate) for all‐optical applications at the 1.32 μm communications wavelength by measuring the electronic and thermo‐optic nonlinearities, and the multiphoton absorption with picosecond pulses. With appropriate heat sinking, duty cycles greater than 25% should be possible without significant cumulative thermal effects for 1 W operating powers. © 1994 American Institue of Physics.  
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42.70.Jk Polymers and organics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Measurement of solid–liquid interface temperature during pulsed excimer laser melting of polycrystalline silicon films

Xianfan Xu, Costas P. Grigoropoulos, and Richard E. Russo

Appl. Phys. Lett. 65, 1745 (1994); http://dx.doi.org/10.1063/1.113044 (3 pages) | Cited 18 times

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A nanosecond time resolution pyrometer has been developed for measuring the transient temperature of thin polycrystalline silicon (p‐Si) films irradiated by a pulsed excimer laser. The sample design structure and material optical properties allow direct measurement of the temperature at the solid–liquid phase change interface. © 1994 American Institue of Physics.
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64.70.D- Solid-liquid transitions
79.20.Ds Laser-beam impact phenomena
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

InGaAs/GaAs quantum well lasers with dry‐etched mirror passivated by vacuum atomic layer epitaxy

N. C. Frateschi, M. Y. Jow, P. D. Dapkus, and A. F. J. Levi

Appl. Phys. Lett. 65, 1748 (1994); http://dx.doi.org/10.1063/1.112905 (3 pages) | Cited 4 times

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We report measurements of strained InGaAs/GaAs quantum well laser diodes with electron cyclotron resonance (ECR) plasma etched mirrors that are passivated and smoothed with a novel technique involving the selective area growth of GaAs by vacuum atomic layer epitaxy. The threshold current of as‐cleaved, etched, and passivated devices has been studied and a significant improvement in mirror feedback is shown with the passivation and smoothing of etched mirrors oriented along the [001] planes. © 1994 American Institue of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Ultraviolet‐laser‐induced desorption of atoms, ions, and molecules from lithium niobate

M. Affatigato, K. Tang, R. F. Haglund, and C. H. Chen

Appl. Phys. Lett. 65, 1751 (1994); http://dx.doi.org/10.1063/1.112906 (3 pages) | Cited 6 times

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We report measurements of ultraviolet‐laser‐induced desorption of atoms, ions, and molecules from the surface of single‐crystal, Y‐cut lithium niobate at intensities below the plasma threshold. Particularly striking is the desorption of LiNbO3 molecules at intensities well below the threshold for the atomic and ion emission. Measurement of oxygen and niobium yields above and below the plasma threshold show changes in surface stoichiometry. © 1994 American Institue of Physics.
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81.65.-b Surface treatments
81.15.Fg Pulsed laser ablation deposition
79.20.Ds Laser-beam impact phenomena
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

Persistent room‐temperature relaxation of InP amorphized and compacted by MeV ion beams

L. Cliche, S. Roorda, and R. A. Masut

Appl. Phys. Lett. 65, 1754 (1994); http://dx.doi.org/10.1063/1.112907 (3 pages) | Cited 12 times

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Ion beam induced deformation and compaction has been observed in InP, amorphized by MeV Se ion implantation. The initial density of amorphous InP is 0.55%±0.05% larger than that of crystalline InP. During a period of two months, most of the excess density is lost in a spontaneous, room‐temperature relaxation. This relaxation can be described by two time constants: τ1≊8±2 h and τ2≊14±1 days. © 1994 American Institue of Physics.
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61.80.Jh Ion radiation effects
61.43.Dq Amorphous semiconductors, metals, and alloys

Filament activated chemical vapor deposition of boron carbide coatings

Sadanand V. Deshpande, Erdogan Gulari, Stephen J. Harris, and Anita M. Weiner

Appl. Phys. Lett. 65, 1757 (1994); http://dx.doi.org/10.1063/1.112909 (3 pages) | Cited 29 times

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In this study, we have demonstrated that boron carbide, an extremely hard and wear‐resistant material, can be deposited with hot filament‐activated chemical vapor deposition (HFCVD). There are several benefits to using a hot filament system, including a high deposition rate and a relatively low substrate temperature with a process that is not line‐of‐sight. High purity, apparently amorphous boron carbide films were obtained by the use of a chlorine based precursor (which is less toxic than diborane). This indicates that either the hot filament helps in complete decomposition of BCl3 or the presence of high concentration of atomic hydrogen in a HFCVD environment helps in scavenging the chlorine. © 1994 American Institue of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Nucleation and coalescence in hydrogenated amorphous silicon studied by scanning tunneling microscopy

Kazuyuki Ikuta, Kazunobu Tanaka, Satoshi Yamasaki, Kazushi Miki, and Akihisa Matsuda

Appl. Phys. Lett. 65, 1760 (1994); http://dx.doi.org/10.1063/1.112910 (3 pages) | Cited 10 times

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Direct subnanometer‐scale observation was made on an ultrathin film of hydrogenated amorphous silicon deposited on a highly oriented pyrolytic graphite substrate, using a ultrahigh vacuum scanning tunneling microscopy. Subnanostructures with a size of 5–10 Å were observed on the top surface independent of the film thickness below 400 Å, which are speculated to be SiH3. It is demonstrated that coalescence between nuclei (clusters) is enhanced by a surface diffusion of SiH3 precursors. © 1994 American Institue of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.43.Dq Amorphous semiconductors, metals, and alloys

Discussion of domain inversion in LiNbO3

Lisheng Huang and Nicolos A. F. Jaeger

Appl. Phys. Lett. 65, 1763 (1994); http://dx.doi.org/10.1063/1.112911 (3 pages) | Cited 19 times

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A simple model is proposed to explain the ferroelectric domain inversion which occurs in LiNbO3 during high‐temperature processes. This domain inversion is believed to be due to a space‐charge electric field resulting from a Nb....Li defect gradient and the associated free electrons, which are produced by the Li outdiffusion associated with such high‐temperature processes. © 1994 American Institue of Physics.  
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77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Direct observation of interface and surface steps in epitaxial films by dark‐field transmission electron microscopy

D. Loretto, F. M. Ross, C. A. Lucas, and G. C. L. Wong

Appl. Phys. Lett. 65, 1766 (1994); http://dx.doi.org/10.1063/1.112912 (3 pages) | Cited 1 time

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We have used dark‐field transmission electron microscopy to investigate <5 nm thick CaF2 films grown on Si(111) by molecular‐beam epitaxy. Images formed with CaF2 [111] reflections exhibit contrast at 1/3[111] height steps at the CaF2 surface and at the CaF2/Si interface over large (≳100 μm2), statistically significant areas. Direct evidence for step‐flow growth in CaF2 has been obtained. © 1994 American Institue of Physics.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Subsurface hydrogenated amorphous silicon to μc‐hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry

Y. H. Yang, M. Katiyar, G. F. Feng, N. Maley, and J. R. Abelson

Appl. Phys. Lett. 65, 1769 (1994); http://dx.doi.org/10.1063/1.113003 (3 pages) | Cited 23 times

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We use in situ spectroscopic ellipsometry to analyze the microstructure of the μc‐Si:H/a‐Si:H interface deposited by reactive magnetron sputtering of a Si target in (Ar+H2). We increase the hydrogen pressure to promote μc‐Si:H formation and observe several effects. Initially, H penetrates ∼45 Å into the a‐Si:H substrate and increases its hydrogen content. Then ∼55 Å of hydrogen‐rich a‐Si:H deposits. Finally, μc‐Si:H nucleates on top of this ∼100 Å thick, high H‐content a‐Si:H interface layer. As μc‐Si:H grows, the thickness of the amorphous interface layer decreases by ∼40 Å; the void fraction in the μc‐Si:H layer is always ≤15 vol %, ruling out the possibility that the a‐Si:H is etched away. These results suggest that a‐Si:H can be transformed into μc‐Si:H in a subsurface region under appropriate conditions. © 1994 American Institue of Physics.
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology

High quality Si/Si1−xGex layered structures grown using a mass‐spectrometry controlled electron‐beam evaporation system

W.‐X. Ni, A. Henry, M. I. Larsson, K. Joelsson, and G. V. Hansson

Appl. Phys. Lett. 65, 1772 (1994); http://dx.doi.org/10.1063/1.112913 (3 pages) | Cited 11 times

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High quality, strained Si/Si1−xGex layered structures have been grown at temperatures in the range 400–625 °C, using a solid‐source molecular‐beam epitaxy (MBE) system with a mass‐spectrometry‐based loop‐control to improve the accuracy and stability of the evaporation rates. Good control of the growth parameters has been achieved as verified by, e.g., high‐resolution x‐ray diffraction. Very high intensities and extremely small peak widths, down to 2.7 meV for the XNP transition at low excitation levels of photoluminescence spectra, indicate high crystalline quality of the layers. It is shown that some previously reported defect‐related luminescence from MBE‐grown SiGe layers is not intrinsic to the MBE process. © 1994 American Institue of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.66.Li Other semiconductors

Nanolithography with an atomic force microscope for integrated fabrication of quantum electronic devices

M. Wendel, S. Kühn, H. Lorenz, J. P. Kotthaus, and M. Holland

Appl. Phys. Lett. 65, 1775 (1994); http://dx.doi.org/10.1063/1.112914 (3 pages) | Cited 53 times

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We describe a novel technique using an atomic force microscope (AFM) for integrated nanometer‐scale lithography on various mask materials such as photoresist or gold covering a mesa‐etched GaAs‐AlGaAs heterostructure at ambient conditions. The generated patterns can be transferred to the two‐dimensional electron gas by wet chemical etching or by ion beam irradiation. We succeed in fabricating hole arrays with a periodicity down to 35 nm and a hole diameter of only a few nanometers. In magnetoresistance studies on so‐called antidot devices with 95 nm period at T=4.2 K we can clearly observe commensurability oscillations, demonstrating the successful pattern transfer to the electron system. With the AFM we can also pattern lines of varying width and depth into prefabricated devices. © 1994 American Institue of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
85.40.Hp Lithography, masks and pattern transfer

Thermal annealing of buried Al barrier layers to passivate the surface of copper films

P. J. Ding, W. Wang, W. A. Lanford, S. Hymes, and S. P. Murarka

Appl. Phys. Lett. 65, 1778 (1994); http://dx.doi.org/10.1063/1.112866 (3 pages) | Cited 29 times

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Annealed metallic bilayers consisting of Cu/Al/SiO2 are studied from the perspective of providing both surface passivation and diffusion barrier/adhesion promoter function for advanced copper based metallization. Upon annealing this bilayer film at 400 °C or higher, enough Al dissolves into the Cu to provide substantial oxidation resistance at the copper surface. The resistivity of these annealed films is approximately 4.5 μΩ cm. Compared to films of pure copper, these bilayer films are much more adherent to SiO2 and much more stable (both morphology and diffusion) on SiO2. © 1994 American Institue of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Characterization of the near‐interface region of chemical vapor deposited diamond films on silicon by backscatter Kikuchi diffraction

S. Geier, M. Schreck, R. Hessmer, B. Rauschenbach, B. Stritzker, K. Kunze, and B. L. Adams

Appl. Phys. Lett. 65, 1781 (1994); http://dx.doi.org/10.1063/1.112867 (3 pages) | Cited 8 times

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The lattice orientations near the interface of chemical vapor deposited diamond films on Si(001) have been studied by orientation imaging microscopy. This technique is based on the automated analysis of electron backscatter Kikuchi diffraction patterns. The electron beam has been scanned in discrete steps over the reverse side of the diamond film after having removed the substrate. The obtained data have allowed us to determine the texture and to visualize quantitatively the orientational arrangement of and among individual diamond crystallites in the near‐interface region. A comparison with the orientation of the substrate has proved the existence of epitaxially nucleated grains. A high amount of twinned diamond has been deduced from the pole figures and verified by analysis of orientation correlations between neighboring crystallites. Moreover, the grain boundary maps have allowed us to monitor and quantify directly the occurring twin boundaries. © 1994 American Institue of Physics.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Artificially engineered pyroelectric Sr1−xBaxTiO3 superstructure films

E. Wiener‐Avnear

Appl. Phys. Lett. 65, 1784 (1994); http://dx.doi.org/10.1063/1.112868 (3 pages) | Cited 32 times

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Artificially engineered superstructure films of SrTiO3/BaTiO3 were deposited layer by layer via pulsed laser deposition onto substrates of sapphire with and without Pt/Ti electrodes. Secondary‐ion‐mass‐spectroscopy and x‐ray diffraction measurements were performed to explore the nature of the multilayered structure. Dielectric measurements versus temperature revealed a broad peak near the extrapolated Curie temperature. © 1994 American Institue of Physics.
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81.15.Fg Pulsed laser ablation deposition
85.60.Gz Photodetectors (including infrared and CCD detectors)
77.70.+a Pyroelectric and electrocaloric effects
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Effect of grain boundaries on the formation of luminescent porous silicon from polycrystalline silicon films

P. Guyader, P. Joubert, M. Guendouz, C. Beau, and M. Sarret

Appl. Phys. Lett. 65, 1787 (1994); http://dx.doi.org/10.1063/1.112869 (3 pages) | Cited 17 times

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Luminescent porous silicon can be obtained by electrochemical etching under illumination from n‐type polycrystalline silicon which has been fabricated by solid phase crystallization of in situ doped amorphous films deposited by low pressure chemical vapor deposition. The analyses of the nanostructures by microscopy show that the pore orientations mainly follow the current flow which is channeled by macropores located at grain boundaries. The luminescence results obtained from this porous polycrystalline silicon are comparable to those obtained from porous samples of single‐crystals silicon. © 1994 American Institue of Physics.
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81.65.-b Surface treatments
82.45.-h Electrochemistry and electrophoresis
78.55.Hx Other solid inorganic materials

Ultrafast 1.55‐μm photoresponses in low‐temperature‐grown InGaAs/InAlAs quantum wells

R. Takahashi, Y. Kawamura, T. Kagawa, and H. Iwamura

Appl. Phys. Lett. 65, 1790 (1994); http://dx.doi.org/10.1063/1.112870 (3 pages) | Cited 57 times

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Doping with Be was found to be very effective for shortening of carrier lifetime in InGaAs/InAlAs multiple quantum wells (MQWs) grown at low temperature by molecular beam epitaxy. The MQW materials have carrier lifetimes controllable from a few tens of picoseconds to 1 ps in the 1.55‐μm wavelength region, coupled with a large optical nonlinearity due to an excitonic feature, implying applicability to ultrafast optical devices in the fiber‐optic communication. The carrier lifetime was measured by a time‐resolved pump‐probe method using an optical source based on a 1.535‐μm semiconductor laser. We also investigated the resistivity, carrier density, and Hall mobility in the MQWs. © 1994 American Institue of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors

Quasibound states in two‐dimensional quantum wires

Jian Wang, Yongjiang Wang, and Hong Guo

Appl. Phys. Lett. 65, 1793 (1994); http://dx.doi.org/10.1063/1.112872 (3 pages) | Cited 42 times

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We report detailed studies of quasibound states of a T‐shaped two‐dimensional quantum wire structure. While in the tunneling regime the peaks of the resonant transmission pattern correspond to quasibound states in the system, in the transmissive regime we show that the reflection peaks correspond to them. Furthermore, there is a one‐to‐one correspondence in energy and wave function between the quasibound states of the open structure and the bound state of the corresponding closed structure. We show that the quasibound states of the system can be unambiguously identified by the behavior of the electron dwell time. © 1994 American Institue of Physics.
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73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Enhanced transfer efficiency in AlGaAs asymmetric planar microcavities

T. Nishikawa, T. Kakimura, Y. Lee, M. Yamanishi, I. Ogura, and T. Ishihara

Appl. Phys. Lett. 65, 1796 (1994); http://dx.doi.org/10.1063/1.112873 (3 pages) | Cited 12 times

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Enhanced transfer efficiency of spontaneous emission, which is the quantum efficiency of the collection of total spontaneously emitted photons, has been revealed with asymmetric AlGaAs planar microcavities containing single GaAs quantum wells at 40 K. The obtained transfer efficiency is as high as ∼15%. An effect of photon reabsorption on the transfer efficiency is also discussed. © 1994 American Institue of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

New crystalline structure for nanometer‐sized Ge microcrystallites prepared by plasma enhanced chemical vapor deposition

Jiangong Jiang, Kunji Chen, Xinfan Huang, Zhifen Li, and Duan Feng

Appl. Phys. Lett. 65, 1799 (1994); http://dx.doi.org/10.1063/1.112848 (3 pages) | Cited 8 times

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Crystallized Ge films have been produced in a plasma enhanced chemical vapor deposition system by the decomposition of H2‐diluted GeH4 gas source while using the H2 plasma treatment. Structural analyses of the films using x‐ray diffraction and transmission electron microscopy techniques revealed a new crystalline structure in the Ge microcrystallites with a diameter of about 5 nm, which is different from the normal diamond structure of crystalline Ge. This new nanometer crystalline structure has been explained to be a metastable nanometer‐sized atomic configuration formed in the film deposition process. © 1994 American Institue of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Writing erasable metallic patterns in insulating AlxGa1−xAs:DX

Tineke Thio, R. A. Linke, G. E. Devlin, J. W. Bennett, James D. Chadi, and M. Mizuta

Appl. Phys. Lett. 65, 1802 (1994); http://dx.doi.org/10.1063/1.113001 (3 pages) | Cited 24 times

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We have optically written persistent but erasable metallic features in insulating epilayers of AlxGa1−xAs doped with Si and Se, which form DX centers. The photocarriers, which remain in the AlxGa1−xAs layer, move freely in the conduction band but are confined to the exposed regions. We demonstrate this confinement by optical excitation in a striped pattern; the resulting modulation of the free carrier density is evinced by an anisotropy of the sample conductance parallel and perpendicular to the stripes. The anisotropy, like the photoconductivity itself, is persistent at low temperatures. Erasure is achieved by thermal annealing. We estimate that features can be written with better than 1000 Å resolution. © 1994 American Institue of Physics.
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72.40.+w Photoconduction and photovoltaic effects
71.55.Eq III-V semiconductors
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Sub‐100 μA current operation of strained InGaAs quantum well lasers at low temperatures

B. Zhao, T. R. Chen, L. E. Eng, Y. H. Zhuang, A. Shakouri, and A. Yariv

Appl. Phys. Lett. 65, 1805 (1994); http://dx.doi.org/10.1063/1.112849 (3 pages) | Cited 7 times

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Very low threshold currents (<100 μA) have been achieved in InGaAs strained single quantum well lasers at cryogenic temperatures. Threshold currents of 38 and 56 μA and external quantum efficiency ∼1 mW/mA have been demonstrated under cw operation condition at temperatures of 6 and 77 K, respectively. The external quantum efficiency increased by about a factor of 2 at low temperatures (<100 K) in comparison to that at room temperature. These results are relevant to the prospect of integration of semiconductor lasers with low temperature electronics for high performance © 1994 American Institue of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
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