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3 Oct 1994

Volume 65, Issue 14, pp. 1733-1852

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Multistability of the current‐voltage characteristics in doped GaAs‐AlAs superlattices

J. Kastrup, H. T. Grahn, K. Ploog, F. Prengel, A. Wacker, and E. Schöll

Appl. Phys. Lett. 65, 1808 (1994); http://dx.doi.org/10.1063/1.112850 (3 pages) | Cited 72 times

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Electric‐field domain formation in doped semiconductor superlattices leads to sharp discontinuities in the current‐voltage (I‐V) characteristic. The successive expansion of the high‐field region with increasing bias voltage through the periodic heterostructure manifests itself in a regular sequence of stable current branches. The current shows a complex hysteretic behavior. We observe two, three, and more stable current levels for fixed bias voltages. Calculations of the I‐V characteristic based on a microscopic model support the experimentally observed multistability. © 1994 American Institue of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Ht High-field and nonlinear effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Deep donor state of vanadium in cubic silicon carbide (3C‐SiC)

K. F. Dombrowski, U. Kaufmann, M. Kunzer, K. Maier, J. Schneider, V. B. Shields, and M. G. Spencer

Appl. Phys. Lett. 65, 1811 (1994); http://dx.doi.org/10.1063/1.112851 (3 pages) | Cited 12 times

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Electron spin resonance (ESR) of silicon‐substitutional vanadium in its neutral V4+Si (3d1) state has been observed in cubic bulk 3C‐SiC single crystals. By photo‐ESR the position of the (0/+) deep donor level of vanadium could be located at EV+1.7 eV. Using this level as common reference in 3C‐SiC and 6H‐SiC, the valence‐band discontinuity in the 3C‐SiC/6H‐SiC interface is predicted as ΔEV=0.1 eV, with the valence band of 3C‐SiC lying lower in energy. We also offer an explanation for the absence of intra‐3d‐shell infrared luminescence of V4+ (3d1) in 3C‐SiC. © 1994 American Institue of Physics.
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71.55.Ht Other nonmetals
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
73.61.Le Other inorganic semiconductors

Visible photoluminescence in Si+‐implanted thermal oxide films on crystalline Si

Tsutomu Shimizu‐Iwayama, Setsuo Nakao, and Kazuo Saitoh

Appl. Phys. Lett. 65, 1814 (1994); http://dx.doi.org/10.1063/1.112852 (3 pages) | Cited 159 times

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We have investigated visible photoluminescence excited by Ar ion laser (488 nm, 2.54 eV) at room temperature from Si+‐implanted thermal oxide films grown on crystalline Si wafer, as‐implanted and after subsequent annealing in vacuum. We found two types of visible luminescence bands similar to those of silica glasses; one band is observed in as‐implanted specimens and disappears after heating to about 600 °C, and the other band is observed only after heating the specimens to about 1100 °C. Though the shapes of these luminescence spectra are different from those having been observed in Si+‐implanted silica glass, the origins of these bands are the same as in silica glass. We discuss the similarities and the differences of luminescence bands in Si+‐implanted silica glasses and thermal oxide films grown on crystalline Si. © 1994 American Institue of Physics.
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78.55.Hx Other solid inorganic materials
71.55.Ht Other nonmetals
61.80.Jh Ion radiation effects

Effect of sublevel coupling on the line shape of the intersubband transitions in double quantum wells

M. Załużny

Appl. Phys. Lett. 65, 1817 (1994); http://dx.doi.org/10.1063/1.112853 (3 pages) | Cited 6 times

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Intersubband resonance line shapes near sublevel crossing in asymmetric coupled double quantum wells are analyzed including the depolarization effect. Obtained results show that in the weakly tunneling system the sublevels‐anticrossing effects occur at the depolarization‐shifted intersubband energy. © 1994 American Institue of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors

Defect generation in 3.5 nm silicon dioxide films

D. A. Buchanan, D. J. DiMaria, C‐A. Chang, and Y. Taur

Appl. Phys. Lett. 65, 1820 (1994); http://dx.doi.org/10.1063/1.112854 (3 pages) | Cited 17 times

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The generation of defects in thin 3.5 nm SiO2 films has been measured as a function of the average electron energy and total injected fluence. It is found that the generation of defects during electron injection for both positive and negative bias manifests itself as positive charge as measured from the increase in the current for a given bias. Positive charge generation is seen for electrons injected into the silicon dioxide conduction band, with the generation rate increasing with increasing electron energy. Electrons that traverse the oxide film via direct quantum‐mechanical tunneling do not generate measurable defects. These results are consistent with previously published results on thicker films where the defects were attributed to positive charge found near the anode. © 1994 American Institue of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

High‐quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition

K. G. Fertitta, A. L. Holmes, J. G. Neff, F. J. Ciuba, and R. D. Dupuis

Appl. Phys. Lett. 65, 1823 (1994); http://dx.doi.org/10.1063/1.112855 (3 pages) | Cited 29 times

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We report the growth of high‐quality GaN heteroepitaxial films on (0001) sapphire substrates by low‐pressure metalorganic chemical vapor deposition. These films have exhibited narrow x‐ray‐diffraction rocking curves with full‐width‐at‐half‐maximum values as low as ΔΘ∼38 arc sec. These are the narrowest x‐ray‐diffraction rocking curve linewidths reported to date for any III‐V nitride film. Electrical and optical measurements further indicate the samples to be of high quality. © 1994 American Institue of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Photoinduced modification of the catalytic reaction of titanium oxide and palladium in chemical vapor deposition of Al films

Mitsugu Hanabusa and Atsushi Komatsu

Appl. Phys. Lett. 65, 1826 (1994); http://dx.doi.org/10.1063/1.112856 (3 pages) | Cited 4 times

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In chemical vapor deposition of Al thin films, using dimethylaluminum hydride, the catalytic reaction of titanium oxide was enhanced by irradiation of the UV light from a deuterium lamp. In contrast, the light suppressed nucleation on another catalytic Pd surface, which became pronounced at low temperatures. A 160‐nm emission band of the deuterium lamp was more effective in the observed photoinduced effects than a 240‐nm band. © 1994 American Institue of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
85.40.Ls Metallization, contacts, interconnects; device isolation

Influence of fluorine preamorphization on the diffusion and activation of low‐energy implanted boron during rapid thermal annealing

T. H. Huang, H. Kinoshita, and D. L. Kwong

Appl. Phys. Lett. 65, 1829 (1994); http://dx.doi.org/10.1063/1.112857 (3 pages) | Cited 19 times

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The diffusion and activation of low‐energy implanted B in F preamorphized Si during rapid thermal annealing has been studied. Compared with low‐energy B or BF2 implant into crystalline Si, low‐energy B ion implantation into F preamorphized Si allows the formation of shallow junctions with reduced junction depth and increased B activation. F preamorphization suppresses the B transient enhanced diffusion in the low B concentration region resulting in a steep dopant profile which is necessary for shallow junction formation. Secondary ion mass spectroscopy and cross‐sectional transmission electron micrograph results show F accumulation near the surface and at end‐of‐range defects. The interaction of F with defects is believed to reduce B diffusion in the low B concentration region. Low‐energy B implant into F preamorphized Si followed by rapid thermal annealing has been demonstrated as a promising process for shallow junction formation. © 1994 American Institue of Physics.
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66.30.J- Diffusion of impurities
61.72.uf Ge and Si
61.72.Yx Interaction between different crystal defects; gettering effect

Misorientation angle distributions for large‐angle grain boundaries in Bi2Sr2CaCu2O8 and Bi2Sr2Ca2Cu3O10 composite tapes

Yimei Zhu, M. Suenaga, and R. L. Sabatini

Appl. Phys. Lett. 65, 1832 (1994); http://dx.doi.org/10.1063/1.112967 (3 pages) | Cited 22 times

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The angular distributions of large‐angle grain boundaries were studied by electron microscopy for Bi(2:2:1:2) and Bi(2:2:2:3) composite tapes. For Bi(2:2:2:3) the distributions are random, while for Bi(2:2:1:2), there was a high incidence of special boundary misorientations. The preferred orientations in Bi(2:2:1:2), which were analyzed for [001] and [100] rotations, agreed well with the calculated lattice coincidences based on the constraint Coincidence Site Lattice model, and were attributed to the reorientation of the neighboring grains during its partial melt process. © 1994 American Institue of Physics.
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84.71.Mn Superconducting wires, fibers, and tapes
74.81.Bd Granular, melt-textured, amorphous, and composite superconductors
74.72.-h Cuprate superconductors
61.72.Mm Grain and twin boundaries

Inductance measurements in multilevel high Tc step‐edge grain boundary SQUIDS

M. G. Forrester, A. Davidson, J. Talvacchio, J. R. Gavaler, and J. X. Przybysz

Appl. Phys. Lett. 65, 1835 (1994); http://dx.doi.org/10.1063/1.112858 (3 pages) | Cited 15 times

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Multilevel high Tc SQUIDs, suitable for digital circuit applications, have been fabricated and tested. The devices employ a YBa2Cu3O7−δ (YBCO) ground plane, an epitaxial SrTiO3 insulator, and a YBCO microstrip layer. Junctions are formed by the step‐edge grain boundary process, with a ground plane contact for the ‘‘low’’ side of each junction, using only isotropic sputtering and milling techniques. Control current is directly injected in a microstrip segment of the SQUID loop, allowing us to measure the microstrip inductance, and thus to infer the magnetic penetration depth of the YBCO. The SQUIDs are operational above 77 K, at which temperature we infer a penetration depth of 350 nm. The temperature dependence of the penetration depth is found to be in reasonable agreement with the Gorter–Casimir form close to Tc. © 1994 American Institue of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.78.Fk Multilayers, superlattices, heterostructures
74.78.-w Superconducting films and low-dimensional structures

Josephson fluxonic diode

F. Raissi and J. E. Nordman

Appl. Phys. Lett. 65, 1838 (1994); http://dx.doi.org/10.1063/1.112859 (3 pages) | Cited 16 times

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A nonuniform magnetic field has been applied to a long Josephson junction to create two separated vortex and antivortex regions. Such a configuration is the Josephson version of the so‐called fluxonic diode, an electrical dual to the semiconductor p‐n junction diode. Volt‐ampere relations of a junction subjected to this magnetic field are compared with those obtained using a unidirectional magnetic field. The study, supported by simulation, shows a number of unique characteristics including rectification and fluxon injection across the junction. Both are necessary phenomena for realization of a bipolar transistor dual. © 1994 American Institue of Physics.
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85.25.Cp Josephson devices
74.50.+r Tunneling phenomena; Josephson effects

YBa2Cu3O7 ramp‐type junctions and superconducting quantum interference devices with an ultrathin barrier of NdGaO3

D. Grundler, J.‐P. Krumme, B. David, and O. Dössel

Appl. Phys. Lett. 65, 1841 (1994); http://dx.doi.org/10.1063/1.112860 (3 pages) | Cited 1 time

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We have fabricated ramp‐type Josephson junctions and SQUIDs (superconducting quantum interference devices) using an ultrathin barrier layer of NdGaO3 as weak contact between the YBa2Cu3O7 electrodes. The junctions operate up to 82 K, exhibiting current‐voltage characteristics of the resistively‐shunted‐junction type. A normal‐state resistance of up to 30 Ω at a junction width of 5 μm and a characteristic voltage in excess of 100 μV at 77 K are obtained. We find hysteretic behavior below 70 K and an intrinsic junction capacitance of about 0.15 μF/cm2 at 4 K. SQUIDs show a transfer function δ V/δ Φ of 50 μV/Φ0 at an inductance of 40 pH at 77 K. Thus we observe excellent Josephson properties at a thickness of the NdGaO3 barrier of 2 nm. © 1994 American Institue of Physics.  
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.78.Fk Multilayers, superlattices, heterostructures
74.78.-w Superconducting films and low-dimensional structures
74.50.+r Tunneling phenomena; Josephson effects

Thermal lens coupled magneto‐optical effect in a ferrofluid

Tengda Du, Suihua Yuan, and Weili Luo

Appl. Phys. Lett. 65, 1844 (1994); http://dx.doi.org/10.1063/1.112861 (3 pages) | Cited 17 times

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A magnetic‐field‐induced diffraction pattern was studied by a new technique: thermal lens coupled magneto‐optical effect. In low fields, the diffraction angle has an almost quadratic dependence: θ∝H2. This effect can be used as an all optical magnetic field sensor with a resolution of 0.5 Oe, with a potential for further improvement. The method can also lead to the measurement of the onset of agglomeration in the sample. © 1994 American Institue of Physics.
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75.50.Tt Fine-particle systems; nanocrystalline materials
78.20.Ls Magneto-optical effects
75.50.Mm Magnetic liquids
42.25.Fx Diffraction and scattering

Charge sensitivity of a single electron transistor

Ulrik Hanke, Yu. M. Galperin, and K. A. Chao

Appl. Phys. Lett. 65, 1847 (1994); http://dx.doi.org/10.1063/1.112862 (3 pages) | Cited 6 times

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See Also: Erratum

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The charge sensitivity of a capacitive‐coupled single electron transistor (SET) has been investigated with analytical and numerical calculations. We found that by tuning the gate charge and the asymmetry of the conductances, the transconductance‐to‐noise ratio can be largely increased. With the present available fabrication technology, our theoretical analysis can serve as a guidance for optimizing the charge sensitivity of a SET. © 1994 American Institue of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
72.70.+m Noise processes and phenomena
73.40.Gk Tunneling

Ablation of polymer films by a femtosecond high‐peak‐power Ti:sapphire laser at 798 nm

Hiroshi Kumagai, Katsumi Midorikawa, Koichi Toyoda, Shinki Nakamura, Takuya Okamoto, and Minoru Obara

Appl. Phys. Lett. 65, 1850 (1994); http://dx.doi.org/10.1063/1.112863 (3 pages) | Cited 47 times

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Femtosecond infrared pulses from an ultrashort high‐peak‐power Ti:sapphire laser were successfully utilized for ablation of polymer films such as polytetrafluoroethylene, tetrafluoro‐ ethylene‐hexafluoropropylene copolymer, and polyimide. Good agreement between experimental data and calculations from a model suggested that simultaneous absorption of three photons for polyimide and five photons for tetrafluoroethylene‐hexafluoropropylene copolymer predominated over the other absorptive channels and that such a multiphoton absorption was induced efficiently. © 1994 American Institue of Physics.
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79.20.Ds Laser-beam impact phenomena
78.66.Qn Polymers; organic compounds
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
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