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10 Oct 1994

Volume 65, Issue 15, pp. 1863-1972

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Gain characteristics of blue/green II‐VI quantum well diode lasers

V. Kozlov, A. Salokatve, A. V. Nurmikko, D. C. Grillo, Li He, J. Han, Y. Fan, M. Ringle, and R. L. Gunshor

Appl. Phys. Lett. 65, 1863 (1994); http://dx.doi.org/10.1063/1.112864 (2 pages) | Cited 11 times

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Gain spectra of the room temperature ZnSe‐based blue‐green lasers have been measured in index guided, single quantum well (SQW) devices that show a peak gain coefficient at a laser threshold of approximately 1500 cm−1.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

TASERs: Possible dc pumped terahertz lasers using interwell transitions in semiconductor heterostructures

A. N. Korotkov, D. V. Averin, and K. K. Likharev

Appl. Phys. Lett. 65, 1865 (1994); http://dx.doi.org/10.1063/1.112865 (3 pages) | Cited 12 times

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We have carried out a theoretical analysis of a possibility to generate coherent continuous‐wave terahertz radiation using double‐quantum‐well heterostructures. The lasing should take place due to inversed population of the wells, created by electron flow through the structure under the effect of applied dc voltage. Estimates show that, e.g., 3 THz radiation with a relatively narrow line (Δf/f≲10−5) and power of the order of 0.1 mW may be generated using structures with area as small as ∼100 μm2, at temperatures up to ∼30 K. For the experimental implementation of this opportunity, a special design is suggested to reduce absorption of terahertz radiation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Sharply directed emission in organic electroluminescent diodes with an optical‐microcavity structure

Tetsuo Tsutsui, Noriyuki Takada, Shogo Saito, and Etsuo Ogino

Appl. Phys. Lett. 65, 1868 (1994); http://dx.doi.org/10.1063/1.113043 (3 pages) | Cited 102 times

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An optical microcavity structure was introduced into organic three‐layer electroluminescent (EL) diodes with a europium complex as an emission layer. The device structure consisted of a dielectric reflector composed of SiO2/TiO2 bilayers, an indium‐tin‐oxide electrode, a hole transport layer, a europium complex as an emission layer, an electron transport layer, and a MgAg electrode. The dielectric reflector and the MgAg metal electrode constituted a planer microcavity. Sharply directed emission from the europium complex was observed when operated under dc drive voltage. Both angular dependences of intensity of emitted light and emission spectra of the EL diodes with the microcavity were compared with those of conventional EL diodes without microcavity. © 1994 American Institue of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

High intensity luminescence from pulsed laser annealed europium implanted sapphire

N. Can, P. D. Townsend, D. E. Hole, and C. N. Afonso

Appl. Phys. Lett. 65, 1871 (1994); http://dx.doi.org/10.1063/1.112871 (3 pages) | Cited 5 times

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Sapphire samples (Al2O3) were implanted with 400‐keV ions at a dose of 1×1016 ions cm−2. A comparison was made between furnace annealing and pulsed laser annealing of the implanted samples. Furnace annealing to 1200 °C, followed by excimer laser anneals, resulted in an increase of the cathodoluminescence emission intensity of the implanted europium by a factor of ∼20. This enhanced intensity is ∼50 times that of the signal prior to any form annealing treatment. It is proposed that the laser anneals dissociate Eu related clusters. The Eu 622‐nm lifetime reached 1.53 ms compared with an original postimplant value of 0.14 ms. © 1994 American Institue of Physics.
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78.60.Hk Cathodoluminescence, ionoluminescence
71.55.Ht Other nonmetals
61.72.Cc Kinetics of defect formation and annealing
61.72.up Other materials

Upconversion luminescence of Er3+ in chloride glasses based on ZnCl2 or CdCl2

Masanori Shojiya, Masahide Takahashi, Ryoji Kanno, Yoji Kawamoto, and Kohei Kadono

Appl. Phys. Lett. 65, 1874 (1994); http://dx.doi.org/10.1063/1.112874 (3 pages) | Cited 38 times

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Upconversion luminescence of Er3+ in the chloride glass system has been investigated in ZnCl2‐BaCl2‐KCl‐ErCl3 and CdCl2‐BaCl2‐KCl‐ErCl3 glasses. Under 800 nm excitation, the glasses gave upconversion luminescence with barely detectable red (around 660 nm), very intense green (around 525–560 nm), and considerably intense blue (around 410 nm) emissions. The intensity of blue emissions was far stronger than that observed for any of other Er3+‐doped glass systems, revealing that Er3+‐doped chloride glasses can efficiently convert the infrared light into much shorter wavelengths. The green emission is attributed not only to the thermally coupled 2H11/2 and 4S3/2→4I15/2 transition but also to the 2H9/2→4I13/2 transition. The blue emission is due to the 2H9/2→4I15/2 transition. The blue and green upconversion luminescence results from a two‐photon process. © 1994 American Institue of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
78.55.Hx Other solid inorganic materials
71.55.Ht Other nonmetals

Color changes in photoluminescence by doped, unconverted and partially converted poly(p‐phenylene vinylene)

M. Esteghamatian and G. Xu

Appl. Phys. Lett. 65, 1877 (1994); http://dx.doi.org/10.1063/1.112875 (3 pages) | Cited 6 times

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Although green‐light‐emitting devices based on poly(p‐phenylene vinylene) ppv, have been made and reported by several researchers, it is also of interest to design light emitting devices which emit light in various parts of the visible spectrum, particularly in the blue region. In this letter the effect of doping and conversion time on the photoluminescence (PL) of pvv are investigated. It is observed that treating ppv films with sulfuric acid shifts the PL peaks to the blue region, and Li doping red‐shifts the spectra. Unconverted and partially converted ppv films, on the other hand, show PL peaks at about 470 to 480 nm in the dark blue range. The shift in PL peak from green to blue is expected to be due to the decrease in conjugation length which determines the size of the band gap. © 1994 American Institue of Physics.
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78.55.Kz Solid organic materials
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Resonant cavity enhanced InP/InGaAs photodiode on Si using epitaxial liftoff

A. Salvador, B. Sverdlov, T. Lehner, A. Botchkarev, F. Huang, and H. Morkoç

Appl. Phys. Lett. 65, 1880 (1994); http://dx.doi.org/10.1063/1.112876 (3 pages) | Cited 2 times

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Epitaxial liftoff (ELO) is used in the fabrication of an InP/InGaAs resonant cavity photodetector on Si. External mirrors were employed with the bottom mirror consisting of an intermediate gold layer between the Si and ELO InP film. A dielectric stack of Si/SiO2 was used as the top mirror instead of a semitransparent metallic mirror to increase the quantum efficiency further. An external quantum efficiency of 0.57 in the spectral region of 1.55 μm was obtained for a 2500‐Å‐thick InGaAs absorbing layer. This is four times larger than the predicted value for a conventional pin photodiode with the same absorbing layer thickness. The spectral response showed wavelength selectivity. A full width at half‐maximum of 150 Å is obtained with the top mirror reflectivity matched for optimum quantum efficiency. Further increase in the top mirror reflectivity improved spectral selectivity but at the expense of reduced quantum efficiency. © 1994 American Institue of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Pw Imaging detectors and sensors
42.82.Cr Fabrication techniques; lithography, pattern transfer

Ultrahigh finesse microcavity with distributed Bragg reflectors

R. P. Stanley, R. Houdré, U. Oesterle, M. Gailhanou, and M. Ilegems

Appl. Phys. Lett. 65, 1883 (1994); http://dx.doi.org/10.1063/1.112877 (3 pages) | Cited 45 times

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We have grown a very high finesse microcavity using distributed Bragg reflectors of AlxGa1−xAs and AlAs. The measured Fabry–Pérot mode has a linewidth of 0.84 Å at 930 nm. This implies a finesse in excess of 5500 and an effective (mirror corrected) finesse greater than 1450. Comparison with theoretical calculations for such a structure shows that (i) the growth rates are stable to 0.25% over 14 h and (ii) the internal losses are less than 1 cm−1. © 1994 American Institue of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Dependence of optical gain on crystal orientation in surface‐emitting lasers with strained quantum wells

T. Ohtoshi, T. Kuroda, A. Niwa, and S. Tsuji

Appl. Phys. Lett. 65, 1886 (1994); http://dx.doi.org/10.1063/1.112878 (2 pages) | Cited 40 times

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We analyze theoretically optical gains in vertical‐cavity surface‐emitting lasers (VCSELs) for various crystal orientations. The calculation based on the multiband effective‐mass theory takes into account the effects of anisotropy and nonparabolicity on the valence subband dispersion. It is found that in VCSELs employing InGaAs/InP strained quantum wells (QWs) with non‐(001) orientations except (111), the polarization in the QW plane can be controlled and high gains are obtained. In particular, the gains in VCSELs with (NN1)‐oriented (N≥2) strained QWs are markedly higher than those in the equivalent (001) lasers. © 1994 American Institue of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Gain dynamics of ionic excimer (XeCs)+ emission at 160 nm in Ar/Xe/Cs mixtures

I. V. Kochetov, A. P. Napartovich, Dennis Lo, and John L. Lawless

Appl. Phys. Lett. 65, 1888 (1994); http://dx.doi.org/10.1063/1.112879 (3 pages) | Cited 3 times

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Gain and absorption of the ionic excimer (XeCs)+ emission at 160 nm in Ar/Xe/Cs mixtures were studied by kinetic model calculations. Both the e‐beam and the self‐sustained discharge excitation schemes were investigated. Model results indicate that when pumped by 20 ns, 1 MeV e‐beam, the mixtures exhibit only loss as absorption due to atomic Cs dominates. Under discharge pumping, 99.9% of the atomic Cs is ionized. Positive net gain up to 2%/cm in the ternary discharge plasma is predicted by model calculations. © 1994 American Institue of Physics.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Picosecond pulse generation in the thresholdless optical microlaser

P. Mataloni, A. Aiello, D. Murra, and F. De Martini

Appl. Phys. Lett. 65, 1891 (1994); http://dx.doi.org/10.1063/1.112880 (3 pages) | Cited 7 times

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Picosecond optical pulses have been generated in different kinds of thresholdless dye microlaser operating in high‐Q plane microcavities at high pumping rate. The temporal behavior of the system is studied by means of a simple rate equation analysis. It is shown that the buildup time of the output pulse is independent of the cavity finesse. The experiment has been performed by means of a temporally resolved up‐conversion technique. A buildup time of the pulse of 3 ps, together with a rise time of 1.5 ps have been measured. These results correspond to a predictable response frequency of 300 GHz. © 1994 American Institue of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Multiple colliding pulse mode‐locked operation of a semiconductor laser

J. F. Martins‐Filho and C. N. Ironside

Appl. Phys. Lett. 65, 1894 (1994); http://dx.doi.org/10.1063/1.113002 (3 pages) | Cited 11 times

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Multiple colliding pulse mode‐locked operation where 3 or 4 ultrashort pulses are present simultaneously within a semiconductor laser is described. Frequency and time domain measurements show that a multisectioned laser can be switched between two, three, and four pulse operation. In four pulse operation, pulse widths of approximately 1.3 ps at repetition rates of 240 GHz have been observed from a 600‐μm‐long laser. © 1994 American Institue of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Study of interwell carrier transport by terahertz four‐wave mixing in an optical amplifier with tensile and compressively strained quantum wells

Jianhui Zhou, Namkyoo Park, Kerry J. Vahala, Michael A. Newkirk, and Barry I. Miller

Appl. Phys. Lett. 65, 1897 (1994); http://dx.doi.org/10.1063/1.112832 (3 pages) | Cited 11 times

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Interwell carrier transport in a semiconductor optical amplifier having a structure of alternating tensile and compressively strained quantum wells was studied by four‐wave mixing at detuning frequencies up to 1 THz. A calculation of transbarrier transport efficiency is also presented to qualitatively explain the measured signal spectra. © 1994 American Institue of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Study on growth processes of particulates in helium‐diluted silane rf plasmas using scanning electron microscopy

M. Shiratani, H. Kawasaki, T. Fukuzawa, H. Tsuruoka, T. Yoshioka, and Y. Watanabe

Appl. Phys. Lett. 65, 1900 (1994); http://dx.doi.org/10.1063/1.112833 (3 pages) | Cited 39 times

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Size, density, and morphology of particulates in helium‐diluted silane rf plasmas are studied using a scanning electron microscopic method. The experimental results show that particulates grow through three phases of nucleation, rapid growth, and growth saturation. Particulates in two different size ranges coexist after the initiation of the rapid growth phase, the size distribution of particulates in each size group is found to be well expressed by both the lognormal and normal distributions with a narrow size dispersion, and coagulation of particulates plays a crucial role in the rapid growth phase. The dependencies of size and density of particulates in the large‐size group on rf‐power‐on period are very similar to their temporal evolutions obtained by an in situ laser light scattering method. © 1994 American Institue of Physics.
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52.80.Pi High-frequency and RF discharges
52.70.Nc Particle measurements
52.25.-b Plasma properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Development of anisotropic microtwin distributions in GaAs grown on 4°‐off (001) Si by molecular beam epitaxy

X. L. Wei and M. Aindow

Appl. Phys. Lett. 65, 1903 (1994); http://dx.doi.org/10.1063/1.112834 (3 pages) | Cited 6 times

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Transmission electron microscopy has been used to confirm that the microtwins in GaAs grown on 4°‐off (001) Si by molecular beam epitaxy form preferentially on one of the {111} planes. A Schmid factor analysis of the stresses in the deposit shows that the favored plane is the one on which the resolved shear stress is highest, supporting a deformation twinning model for twin formation in two dimensional growth of GaAs on offcut Si substrates. © 1994 American Institue of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Thickness dependence of ferroelectric domains in thin crystalline films

Feng Tsai and J. M. Cowley

Appl. Phys. Lett. 65, 1906 (1994); http://dx.doi.org/10.1063/1.112835 (3 pages) | Cited 27 times

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The thickness dependence of ferroelectric domains in thin free‐standing BaTiO3 crystalline films has been studied by transmission electron microscopy. It is found that the widths of ferroelectric domains decrease as the film thickness decreases. This phenomenon may indicate that the ferroelectric properties of thin films are weakened due to surface relaxation effects, including lattice relaxation and a change of spontaneous polarization and charge compensation. The weakening of ferroelectric domains is suggested as a transition state from ferroelectric to paraelectric phase of the BaTiO3 thin film. The thickness of the surface relaxation layer of totally nonferroelectric film is on the order of 10 nm. © 1994 American Institue of Physics.
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Polymerization to graphite‐like nitride clusters from tetracyanoethylene vapor

H. Yanagi, H. Itoh, Y. Ueda, and M. Ashida

Appl. Phys. Lett. 65, 1909 (1994); http://dx.doi.org/10.1063/1.112814 (3 pages) | Cited 2 times

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Various types of graphite‐like nitride clusters were synthesized by chemical vapor deposition of tetracyanoethylene (TCE) onto a substrate of cleaved KCl crystals at 230–300 °C. At a low reaction temperature of 230 °C, TCE was polymerized to ribbon‐like clusters, which resembled curved graphitic sheets. Upon increasing the reaction temperature to 250–300 °C, polymerized TCE condensed on KCl to form spheric clusters. The most regular structure of the clusters was obtained at 300 °C in a nanoscale needle‐like morphology. High‐resolution electron microscopy suggested that these clusters were composed of polymerized TCE layers with a interlayer distance of 0.34–0.35 nm. © 1994 American Institue of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
82.35.-x Polymers: properties; reactions; polymerization
61.46.-w Structure of nanoscale materials

Effects of oxygen and hydrogen adsorption on the electron energy loss features of diamond surfaces

T. E. Beerling and C. R. Helms

Appl. Phys. Lett. 65, 1912 (1994); http://dx.doi.org/10.1063/1.112815 (3 pages) | Cited 2 times

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Electron energy loss spectroscopy has been used to study the surface of diamond and other states of carbon. Other authors have suggested that a loss feature observed at approximately 9 eV may be due to oxygen adsorption on the diamond surface. We report electron energy loss spectroscopy data, in combination with Auger electron spectroscopy data, that shows a correlation of a loss feature at 8.5 eV with adsorbed oxygen on diamond surfaces. Surfaces were oxygenated by low‐energy oxygen ion bombardment and oxygen removed by annealing in vacuum and atomic hydrogen. The atomic hydrogen was used to suppress the π loss feature by etching nondiamond carbon and passivating the diamond surface. © 1994 American Institue of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
79.20.Kz Other electron-impact emission phenomena
68.35.Dv Composition, segregation; defects and impurities

Imaging of single polymer chains based on their elasticity

S. O. Akari, E. W. van der Vegte, P. C. M. Grim, G. F. Belder, V. Koutsos, G. ten Brinke, and G. Hadziioannou

Appl. Phys. Lett. 65, 1915 (1994); http://dx.doi.org/10.1063/1.113000 (3 pages) | Cited 12 times

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In this work we apply a force modulation technique to a standard atomic force microscope (AFM) in order to study the elasticity of individual polystyrene molecules. The sample mounted on a piezoelectric tube was forced to vibrate along the z direction. The corresponding modulation of the cantilever, which reflects the spring constant of the sample, was phase sensitively detected and measured as a function of the surface topography. The image contrast in these images is based on local variations of the surface elasticity. Compared to the conventional AFM topography image, the elasticity image shows an enhanced contrast with pronounced molecular structure. © 1994 American Institue of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Ja Surface and interface dynamics and vibrations

Dose‐rate effects on radiation‐induced bipolar junction transistor gain degradation

A. Wei, S. L. Kosier, R. D. Schrimpf, D. M. Fleetwood, and W. E. Combs

Appl. Phys. Lett. 65, 1918 (1994); http://dx.doi.org/10.1063/1.112816 (3 pages) | Cited 14 times

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Analysis of radiation damage in modern NPN bipolar transistors at various dose rates is performed with a recently introduced charge separation method and pisces simulations. The charge separation method is verified with measurements on metal‐oxide‐semiconductor capacitors. Gain degradation is more pronounced at lower dose rates. The charge separation technique reveals that depletion‐region spreading and effective recombination velocity are both greater for devices irradiated at lower dose rates. © 1994 American Institue of Physics.
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85.30.Pq Bipolar transistors
61.80.Ed γ-ray effects

Spontaneous formation of Al rich and Ga rich AlxGa1−xAs/AlyGa1−yAs superlattice and strong enhancement of optical properties

Albert Chin, K. Y. Hsieh, and H. Y. Lin

Appl. Phys. Lett. 65, 1921 (1994); http://dx.doi.org/10.1063/1.112817 (3 pages) | Cited 11 times

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Long range composition ordering and spontaneous formation of Al rich and Ga rich AlxGa1−xAs/AlyGa1−yAs superlattice were demonstrated. This was observed by cross‐sectional transmission electron microscopy (TEM) in a 280 Å Al0.4GaAs quantum well laser diode heterostructure with Al0.7GaAs barriers grown on (111)B GaAs substrates. On the contrary, none of above superstructure was observed by TEM on a side‐by‐side grown (100) oriented substrate. More evidence is shown in the (111)B Al0.7GaAs barriers which were disordered due to a high growth temperature and did not show any superstructure. 10 K photoluminescence was shown with 32 meV redshift and a 12‐times peak intensity enhancement in (111)B orientation. © 1994 American Institue of Physics.
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68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Hydrogen annealed silicon‐on‐insulator

Nobuhiko Sato and Takao Yonehara

Appl. Phys. Lett. 65, 1924 (1994); http://dx.doi.org/10.1063/1.112818 (3 pages) | Cited 9 times

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Hydrogen annealing effects on silicon‐on‐insulator (SOI) materials are reported. High boron concentration of ∼2×1018/cm3 in 0.1‐μm‐thick SOI layer produced by bond and etch‐back SOI (BESOI) method is reduced to ∼ 5×1015/cm3 by annealing at 1150 °C for 1 h. The BESOI surface became very smooth comparable to commercially available polished wafer simultaneously. Separation‐by‐implantation‐of‐oxygen wafer was also smoothed by the hydrogen anneal. This is due to surface migration of Si atoms driven by surface energy minimization after removing native oxide. © 1994 American Institue of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments

Atomic modification of an Si(111)7×7 surface with adsorbed chlorine atoms using a scanning tunneling microscope

Masakazu Baba and Shinji Matsui

Appl. Phys. Lett. 65, 1927 (1994); http://dx.doi.org/10.1063/1.112819 (3 pages) | Cited 6 times

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A scanning tunneling microscope is used to modify a Si(111)7×7 surface structure with adsorbed chlorine atoms. One Si adatom at the center site is extracted from the surface by field evaporation and the other atom is moved by field‐induced diffusion. This modification is caused by the coordinated breaking of bonds and the moving of adatoms to their adjacent areas as the result of Cl chemical reactivity. © 1994 American Institue of Physics.
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81.65.-b Surface treatments
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

In0.53Ga0.47As metal‐semiconductor‐metal photodiodes with transparent cadmium tin oxide Schottky contacts

Wei Gao, Al‐Sameen Khan, Paul R. Berger, R. G. Hunsperger, George Zydzik, H. M. O’Bryan, D. Sivco, and A. Y. Cho

Appl. Phys. Lett. 65, 1930 (1994); http://dx.doi.org/10.1063/1.112820 (3 pages) | Cited 18 times

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A metal‐semiconductor‐metal (MSM) In0.53Ga0.47As photodiode using a transparent cadmium tin oxide (CTO) layer for the interdigitated electrodes was investigated. The transparent contact prevents shadowing of the active layer by the electrodes, thus allowing greater collection of incident light. The barrier height (ϕBn) of CTO on i‐In0.52Al0.48As was determined to be 0.47 eV, while the Ti/Au barrier height was 0.595 eV. The reduced barrier height for CTO is caused by tunneling through the sputter‐damaged cap layer. Responsivity for 1.3 μm incident light was 0.49 and 0.28 A/W, respectively, for the CTO and Ti/Au MSM photodiodes. No antireflection (AR) coating was utilized over the bare semiconductor surface. The CTO MSM photodiode shows a factor of almost two improvement in responsivity over conventional Ti/Au MSM photodiodes. © 1994 American Institue of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Sx Metal-semiconductor-metal structures
73.30.+y Surface double layers, Schottky barriers, and work functions
73.50.Pz Photoconduction and photovoltaic effects

Temperature dependence of equilibrium electron density in AlGaAs governed by Sn‐related DX centers

K. Ždánský

Appl. Phys. Lett. 65, 1933 (1994); http://dx.doi.org/10.1063/1.112821 (2 pages)

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Capacitance and conductance of AlxGa1−xAs/GaAs heterostructures with an Sn‐doped Al0.35Ga0.65As layer and with a p‐n junction was measured as a function of frequency and temperature. The temperature dependence of the free‐electron density n was determined from the measurement. A theoretical relation for n governed by two independent DX centers was derived. The experimental results were explained by the presence of two types of Sn‐related DX centers. The binding energies of the two DX centers were determined and found to be in good accord with values, both experimental and theoretical, reported previously by other authors. © 1994 American Institue of Physics.
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71.55.Eq III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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