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24 Oct 1994

Volume 65, Issue 17, pp. 2121-2234

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Single‐beam time‐resolved Z‐scan measurements of slow absorbers

L. C. Oliveira and S. C. Zilio

Appl. Phys. Lett. 65, 2121 (1994); http://dx.doi.org/10.1063/1.112809 (3 pages) | Cited 27 times

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A single‐beam time‐resolved Z‐scan method is introduced to characterize the nonlinear refraction of slow (millisecond) response absorbers with cw radiation. Owing to the elimination of parasitic linear effects, the technique is able to measure induced phase distortions as small as λ/104. We demonstrate this method on several materials using low power Ar+ and He‐Ne lasers. © 1994 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Bright red light‐emitting organic electroluminescent devices having a europium complex as an emitter

Junji Kido, Hiromichi Hayase, Kenichi Hongawa, Katsutoshi Nagai, and Katsuro Okuyama

Appl. Phys. Lett. 65, 2124 (1994); http://dx.doi.org/10.1063/1.112810 (3 pages) | Cited 235 times

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Organic electroluminescent (EL) devices with a trivalent europium (Eu) complex as an emitter were fabricated. Triple‐layer‐type cells with a structure of glass substrate/indium‐tin oxide/ triphenyldiamine derivative (TPD)/Eu complex: 1,3,4‐oxadiazole derivative (PBD)/aluminum complex (Alq)/Mg:Ag exhibit bright red luminescence upon applying dc voltage. The EL spectrum consists of extremely sharp emission bands, which is a typical luminescence spectrum of the Eu complex. Luminance of 460 cd/m2 with an emission peak at 614 nm is achieved at a drive voltage of 16 V. This is the highest luminance so far obtained for the EL cells having a Eu complex as an emitter. © 1994 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

Selective ablation of a hydrogenated amorphous silicon thin layer by the second‐harmonic radiation of a transversely excited atmospheric CO2 laser

Tetsumi Sumiyoshi, Yutaka Ninomiya, Akira Shiratori, Minoru Obara, and Katsunori Ishii

Appl. Phys. Lett. 65, 2127 (1994); http://dx.doi.org/10.1063/1.112811 (3 pages) | Cited 1 time

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The second‐harmonic radiation of the transversely excited atmospheric CO2 laser generated by a AgGaSe2 nonlinear crystal is used for the selective ablation of a hydrogenated amorphous silicon (a‐Si:H) thin layer on a quartz substrate. The vibrational energy of the Si—H bonds contained in a‐Si:H at 10 at. % coincides with the photon energy of the 5 μm light and absorbed the laser photons to sufficiently ablate the layer without damage on the quartz substrate. © 1994 American Institute of Physics.
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81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena
42.62.Cf Industrial applications

Novel tunable semiconductor lasers using continuously chirped distributed feedback gratings with ultrahigh spatial precision

H. Hillmer, H.‐L. Zhu, A. Grabmaier, S. Hansmann, H. Burkhard, and K. Magari

Appl. Phys. Lett. 65, 2130 (1994); http://dx.doi.org/10.1063/1.112812 (3 pages) | Cited 5 times

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We present experimental and theoretical results obtained from a new type of tunable two‐ and three‐section semiconductor distributed feedback (DFB) laser using tailored chirped DFB gratings. The chirped gratings are defined by bent waveguides on homogeneous grating fields with ultrahigh spatial precision using bent waveguides. Arbitrary and continuous chirping functions can be obtained by appropriate mathematical bending functions. Our method is applied for tunable lasers with optimized bending shapes revealing a considerably enlarged wavelength tuning range of 5.5 nm without wavelength gaps. © 1994 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Repetitively pulsed relativistic klystron amplifier

Jerrold S. Levine and Bruce D. Harteneck

Appl. Phys. Lett. 65, 2133 (1994); http://dx.doi.org/10.1063/1.112813 (3 pages) | Cited 8 times

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This letter reports on the operation of a repetitively pulsed relativistic klystron amplifier at 200 pps. The electron beam was reproducibly modulated to ≳60%. Using a 5 kA, 500 kV electron beam and a 500 kW magnetron as inputs, we extracted 3.3 kW average power in 80 ns FWHM pulses of 250–300 MW peak power at 1.3 GHz. Limitations that are directly attributable to the repetitive pulsing at these levels have not been observed. © 1994 American Institute of Physics.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
52.59.Px Hard X-ray sources

Metallic glass formation in highly undercooled Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 during containerless electrostatic levitation processing

Y. J. Kim, R. Busch, W. L. Johnson, A. J. Rulison, and W. K. Rhim

Appl. Phys. Lett. 65, 2136 (1994); http://dx.doi.org/10.1063/1.112768 (3 pages) | Cited 99 times

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Various sample sizes of Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 with masses up to 80 mg were undercooled below Tg (the glass transition temperature) while electrostatically levitated. The final solidification product of the sample was determined by x‐ray diffraction to have an amorphous phase. Differential scanning calorimetry was used to confirm the absence of crystallinity in the processes sample. The amorphous phase could be formed only after heating the samples above the melting temperature for extended periods of time in order to break down and dissolve oxides or other contaminants which would otherwise initiate heterogeneous nucleation of crystals. Noncontact pyrometry was used to monitor the sample temperature throughout processing. The critical cooling rate required to avoid crystallization during solidification of the Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 alloy fell between 0.9 and 1.2 K/s. © 1994 American Institute of Physics.
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61.43.Fs Glasses
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
81.05.Kf Glasses (including metallic glasses)

Direct growing of lightly doped epitaxial silicon without misfit dislocation on heavily boron‐doped silicon layer

Ho‐Jun Lee, Chang‐Soo Kim, Chul‐Hi Han, and Choong‐Ki Kim

Appl. Phys. Lett. 65, 2139 (1994); http://dx.doi.org/10.1063/1.112769 (3 pages) | Cited 1 time

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Without buffer layers, a lightly boron‐doped epitaxial layer of good crystalline quality has been directly grown on a heavily boron‐doped silicon layer by eliminating misfit dislocations in the heavily boron‐doped layer. X‐ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of an n+/p diode fabricated in the epitaxial silicon has been measured to be 0.6 nA/cm2 at 5 V. © 1994 American Institute of Physics.
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68.55.-a Thin film structure and morphology

Fabricating nanoscale structures on Au surface with scanning tunneling microscope

K. Bessho and S. Hashimoto

Appl. Phys. Lett. 65, 2142 (1994); http://dx.doi.org/10.1063/1.112770 (3 pages) | Cited 22 times

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Nanometer‐scale pits and mounds were fabricated on Au surface with a scanning tunneling microscope (STM) by applying voltage pulses between the PtIr tip and the substrate. Applying a positive pulse to the substrate generated a pit on the surface with high probability, while a negative pulse formed a mound. The mechanism of structure formation is inferred to be field evaporation, and the polarity dependence is related to the high threshold value of the PtIr alloy tip for negative field evaporation. Furthermore, the fabricated mound could be removed by applying a positive pulse, suggesting that the STM voltage pulse method may be applied to rewritable ultrahigh density recording. © 1994 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
79.70.+q Field emission, ionization, evaporation, and desorption

Two kinds of nitrogen atoms in nitrogen‐substituted, highly crystalline graphite prepared by chemical vapor deposition

T. Matsui, M. Yudasaka, R. Kikuchi, Y. Ohki, and S. Yoshimura

Appl. Phys. Lett. 65, 2145 (1994); http://dx.doi.org/10.1063/1.112774 (3 pages) | Cited 9 times

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Nitrogen‐substituted graphite thin films were prepared by chemical vapor deposition (CVD) using pyrrole as a starting material. Ni was used as the substrate material whose temperature was kept in the range 700–1000 °C. The interlayer spacing of these films, determined by x‐ray diffraction, was close to that of single‐crystal graphite. Two XPS peaks were observed in the N 1s spectra at around 398 and 401 eV. The former can be assigned to nitrogen atoms substituting for carbon atoms in the graphite layer and the latter to nitrogen atoms bonded to the layer edge. © 1994 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.up Other materials

Enhanced confinement of electrons at room temperature using a superlattice reflector

D. Campi, C. Rigo, C. Cacciatore, and H.‐C. Neitzert

Appl. Phys. Lett. 65, 2148 (1994); http://dx.doi.org/10.1063/1.113040 (3 pages) | Cited 3 times

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We report the experimental study of the thermionic emission of electrons into overbarrier states of a superlattice, tailored to enhance electron confinement within a closely spaced quantum well. Partial suppression of the thermionic current is observed at room temperature. A critical evaluation of the practical applications of the effect is offered. Furthermore, the tunnel injection into partially delocalized Stark states of the superlattice is observed at low temperature. © 1994 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Three‐dimensional electrostatic potential, and potential‐energy barrier, near a tip‐base junction

Li‐Hong Pan, Thomas E. Sullivan, Vallorie J. Peridier, Paul H. Cutler, and Nicholas M. Miskovsky

Appl. Phys. Lett. 65, 2151 (1994); http://dx.doi.org/10.1063/1.112775 (3 pages) | Cited 20 times

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The geometry of an atomically sharp or nearly atomically sharp tip in proximity to a planar anode may be closely approximated in the prolate‐spheroidal coordinate system. An exact three‐dimensional electrostatic‐potential solution for a free charge in such a tip/base junction is given in this letter, including calculations for both the symmetrical on‐axis case and the asymmetric off‐axis case. An exact solution for the potential‐energy barrier is also given; this solution has immediate applications in three‐dimensional tunneling studies and in calculations of electron trajectories in micron‐ and submicron‐sized field‐emitter arrays. © 1994 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
73.40.Gk Tunneling
41.20.Cv Electrostatics; Poisson and Laplace equations, boundary-value problems
79.70.+q Field emission, ionization, evaporation, and desorption

Fabrication of a periodically domain‐inverted structure in LiNbO3 thin film by a domain‐transfer technique

Hiroshi Momiji, Kazumi Kawamoto, and Kenchi Ito

Appl. Phys. Lett. 65, 2154 (1994); http://dx.doi.org/10.1063/1.112776 (2 pages) | Cited 1 time

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A new technique to fabricate a periodically domain‐inverted structure in LiNbO3 is reported. This structure, fabricated by Ti indiffusion on a LiNbO3 substrate, is transferred in a LiNbO3 thin film grown by liquid phase epitaxy. As the growth temperature decreases below 690 °C, the cross section of the inverted domain changes from a reversed trapezoidal to a rectangular shape. © 1994 American Institute of Physics.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.82.Cr Fabrication techniques; lithography, pattern transfer

New synthetic route to the formation of fullerene superconductors

J. H. Hwang, C. Y. Mou, H. S. Sheu, Y. Wang, and M. K. Wu

Appl. Phys. Lett. 65, 2156 (1994); http://dx.doi.org/10.1063/1.112747 (3 pages) | Cited 3 times

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A novel synthetic route to the formation of less air sensitive fullerene superconductors by mixing oxygen‐containing alkaline compounds with C60 has been discovered. A high‐resolution single‐crystal x‐ray study on the K‐doped samples shows that the ratio of potassium to C60 is not 3:1. The observed stability enhancement and the off‐stoichiometry of potassium content may originate from the presence of oxygen which serves as an oxidative agent. © 1994 American Institute of Physics.  
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74.70.Wz Carbon-based superconductors
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

GaxIn1−xAs/AlAs resonant tunneling diodes grown by atmospheric pressure metalorganic chemical vapor deposition

B. P. Keller, J. C. Yen, S. P. DenBaars, and U. K. Mishra

Appl. Phys. Lett. 65, 2159 (1994); http://dx.doi.org/10.1063/1.112748 (3 pages) | Cited 4 times

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We report on the growth of GaxIn1−xAs/AlAs double‐barrier heterostructures on InP and the fabrication of GaxIn1−xAs/AlAs resonant tunneling diodes (RTDs) by metalorganic chemical vapor deposition (MOCVD). High resolution x‐ray diffraction measurements were used to evaluate the heterostructure interface quality. The RTDs achieved a room‐temperature peak to valley ratio of 7.7:1 with peak current density of 9.6×104 A/cm2. These are the best reported room‐temperature results for any reported RTDs grown by MOCVD. © 1994 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
73.40.Gk Tunneling

Crystalline phases of II‐VI compound semiconductors grown by pulsed laser deposition

W. P. Shen and H. S. Kwok

Appl. Phys. Lett. 65, 2162 (1994); http://dx.doi.org/10.1063/1.112749 (3 pages) | Cited 29 times

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II‐VI compound semiconductors, ZnS, ZnSe, CdS, CdSe, and CdTe, were grown epitaxially on (111) and (100) InP and GaAs substrates by excimer laser ablation. All of these films have good crystalline quality (fully in‐plane aligned) and mirror‐like surface morphology. It was found that, on (111)‐oriented substrates, CdS and CdSe films were in the hexagonal phase with the c axis perpendicular to the surface, while ZnS and ZnSe films were in the cubic phase. The films grown on (100)‐oriented substrates were all cubic. These high quality films should be useful in optoelectronics applications. © 1994 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology

Low resistance ohmic contacts on nitrogen ion bombarded InP

F. Ren, S. J. Pearton, J. R. Lothian, S. N. G. Chu, W. K. Chu, R. G. Wilson, C. R. Abernathy, and S. S. Pei

Appl. Phys. Lett. 65, 2165 (1994); http://dx.doi.org/10.1063/1.112750 (3 pages) | Cited 9 times

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Nonalloyed Ti/Pt/Au contacts deposited in situ onto nitrogen ion bombarded n‐type InP show contact resistivities as low as 3.4×10−6 Ω cm2. Acceleration voltages of 100–300 V and exposure times of 3–11 min were used to remove InP native oxide and produce a shallow (≤300 Å) disordered donor layer on which ohmic contacts were deposited. Electron diffraction patterns matching those of polycrystalline InN were identified in this degenerately doped surface layer, which was further characterized by secondary ion mass spectrometry and ion channeling. Similar layers produced by Ar ion bombardment under the same conditions showed much higher contact resistivities (∼10−4 Ω cm2), indicating that the InN formation is beneficial for contact properties. © 1994 American Institute of Physics.
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61.80.Jh Ion radiation effects
73.40.Cg Contact resistance, contact potential

Low temperature mobility limiting defects in CdTe/CdMnTe multi‐quantum‐well structures

M. Godlewski, C. I. Harris, J. P. Bergman, B. Monemar, and A. Waag

Appl. Phys. Lett. 65, 2168 (1994); http://dx.doi.org/10.1063/1.112751 (3 pages)

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The results of optically detected cyclotron resonance and photoluminescence kinetics of CdTe/CdMnTe multi‐quantum‐well structures are presented. These experiments indicate that for nominally undoped wide quantum wells ionized shallow donor impurities limit carrier mobilities at low temperature. © 1994 American Institute of Physics.
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73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.55.Et II-VI semiconductors
76.70.Hb Optically detected magnetic resonance (ODMR)

Preparation of crystallographically aligned layers of silicon carbide by pulsed laser deposition of carbon onto Si wafers

L. Rimai, R. Ager, W. H. Weber, J. Hangas, and B. D. Poindexter

Appl. Phys. Lett. 65, 2171 (1994); http://dx.doi.org/10.1063/1.112998 (3 pages) | Cited 3 times

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It is demonstrated that SiC films can be deposited epitaxially on [001] and [111] Si wafers by excimer laser ablation of just a carbon target, in vacuum, at deposition temperatures as low as 1100 °C. Diffraction studies show that the SiC films have the same crystalline orientation as the substrates. The film growth on the Si substrate to thicknesses as large as 4000 Å with no significant excess carbon indicates that in addition to reaction of the carbon in the plume with Si of the substrate, there is transport of Si within the SiC film. For continued deposition beyond this thickness a carbon layer will form. © 1994 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Hydrogenation of multiple‐quantum‐well optical‐modulator structures

T. K. Woodward, J. E. Cunningham, W. Y. Jan, and A. Kastalsky

Appl. Phys. Lett. 65, 2174 (1994); http://dx.doi.org/10.1063/1.112752 (3 pages) | Cited 3 times

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We report studies of hydrogenated multiple‐quantum‐well (MQW) optical‐modulator structures via electron‐cyclotron‐resonance‐derived plasmas. Responsivity, optical transmission, current‐voltage, and capacitance‐voltage characterizations of Schottky‐ as well as pin‐diode modulator structures were performed. We find photocurrent‐collection efficiency and photoluminescence intensity to be enhanced by hydrogenation, with measurable improvement in electrically biased exciton‐absorption linewidth also seen. We interpret our results as arising from increased carrier lifetime in the MQW region, because of passivation of deep levels/defects. The improvements were stable after 550 °C heat treatment. These effects may be useful for improving the yield of usable MQW devices grown in a given system. © 1994 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
61.72.uj III-V and II-VI semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Electrical properties of thermal oxide grown using dry oxidation on p‐type 6H‐silicon carbide

Dev Alok, P. K. McLarty, and B. J. Baliga

Appl. Phys. Lett. 65, 2177 (1994); http://dx.doi.org/10.1063/1.112753 (2 pages) | Cited 25 times

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The electrical properties of thermal oxides grown on p‐type 6H‐silicon carbide were investigated during this work. Thermal oxides were grown on 7×1015 cm−3 aluminum doped p‐type 6H‐silicon carbide at 1275 °C in a dry oxygen ambient. Capacitance‐voltage measurement indicated the presence of a large positive charge in the oxide. The interface state density and effective charge density for these oxides was estimated to be 1×1011 cm−2 eV−1 and 8×1012 cm−2 respectively. Bias temperature stress measurement showed the presence of negative bias stress instability and slow trapping. © 1994 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ng Insulators
81.65.-b Surface treatments

Negative differential conductance frequency resonances in X valley superlattice minibands

A. Sibille, J. F. Palmier, H. Wang, and R. Planel

Appl. Phys. Lett. 65, 2179 (1994); http://dx.doi.org/10.1063/1.112754 (3 pages) | Cited 4 times

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Electron transport along the growth axis of a series of slightly indirect GaAs/AlAs superlattices (SL) is experimentally investigated. Our results, based on current‐voltage and frequency resonance measurements in agreement with calculated characteristics, reveal unambiguously the existence of negative differential velocity at 80 K. Miniband transport in the lower Xxy miniband appears to explain this effect, owing to the low effective mass of Xxy states along the quantization axis. © 1994 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.20.Ht High-field and nonlinear effects

Nanocrystal size modifications in porous silicon by preanodization ion implantation

L. Pavesi, G. Giebel, F. Ziglio, G. Mariotto, F. Priolo, S. U. Campisano, and C. Spinella

Appl. Phys. Lett. 65, 2182 (1994); http://dx.doi.org/10.1063/1.112755 (3 pages) | Cited 14 times

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A tuning of the nanocrystal sizes in porous silicon has been obtained by self‐ion implantation in p‐type silicon wafers before the anodization treatment. Sample porosity, luminescence spectra, Raman scattering, and transmission electron microscopy have been used to determine the structure of porous silicon samples. A porosity increase, a blue shift of the luminescence peak, a widening of the phonon resonance, and a decrease in the size features revealed by transmission electron microscopy (TEM) images are observed by increasing the ion implantation dose. It is suggested that this effect results from the increased resistivity of the Si wafer caused by the ion implantation damage. © 1994 American Institute of Physics.
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61.80.Jh Ion radiation effects
81.65.-b Surface treatments
78.55.Hx Other solid inorganic materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Growth and characterization of thallium‐ and gold‐doped PbSe0.78Te0.22 layers lattice matched with BaF2 substrates

Patrick J. McCann, Srinath K. Aanegola, and John E. Furneaux

Appl. Phys. Lett. 65, 2185 (1994); http://dx.doi.org/10.1063/1.112756 (3 pages) | Cited 9 times

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We report on liquid phase epitaxial growth and Hall effect characterization of thallium‐ and gold‐doped PbSe0.78Te0.22 layers lattice matched with BaF2 substrates. Thallium behaved as an acceptor allowing growth of compensated p‐type PbSe0.78Te0.22 layers with hole concentrations as high as 2.2×1018 cm−3. (Undoped PbSe0.78Te0.22 epitaxial layers were n‐type with electron concentrations of 4.3×1018 cm−3.) The transition from n‐type to p‐type occurs at approximately 1.2 at. % thallium in the growth solution. Gold also exhibited acceptor behavior for low doping concentrations but behaved as a donor for doping concentrations greater than 1 at. % such that p‐type layers could not be obtained. Electron mobilities as high as 7846 cm2/V s at 77 K were measured in this ternary alloy. © 1994 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Dn Low-field transport and mobility; piezoresistance

Nondestructive mapping of carrier concentration and dislocation density in n+‐type GaAs

D. C. Look, D. C. Walters, M. G. Mier, and J. R. Sizelove

Appl. Phys. Lett. 65, 2188 (1994); http://dx.doi.org/10.1063/1.112757 (3 pages)

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Transmission mappings (500 μm×500 μm resolution) at wavelengths of 0.9–1.5 μm on 3 in., n+‐GaAs wafers (n≂1–2×1018 cm−3) correlate well with carrier concentration n, measured by the Hall effect, and dislocation density, as confirmed by KOH etch‐pit patterns. The absorption for λ≳1.0 μm (below band edge) varies directly with n via free‐carrier interconduction‐band transitions, while the absorption for λ≲0.95 μm (near band edge) varies inversely with n because of band‐filling effects. Both phenomena are highly useful for n+‐GaAs wafer characterization. © 1994 American Institute of Physics.
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61.72.Lk Linear defects: dislocations, disclinations
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
85.30.De Semiconductor-device characterization, design, and modeling

Spectroscopy of hydrogen‐related complexes in GaP:Zn

M. D. McCluskey, E. E. Haller, J. Walker, and N. M. Johnson

Appl. Phys. Lett. 65, 2191 (1994); http://dx.doi.org/10.1063/1.112758 (2 pages) | Cited 8 times

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Using infrared spectroscopy, local vibrational modes in GaP:Zn exposed to a remote hydrogen or deuterium plasma were observed. The modes at 2379.0 and 1729.4 cm−1 are assigned to hydrogen—phosphorus and deuterium—phosphorus bond‐stretching modes of complexes adjacent to the zinc acceptors. The isotopic ratio r=νH/νD=1.3756 is very close to that of the zinc‐hydrogen complex in InP (r=1.3744), which suggests that they have the same structure. © 1994 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
63.20.Pw Localized modes
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
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