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31 Oct 1994

Volume 65, Issue 18, pp. 2245-2365

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Luminescence efficiency enhancement in laser soaked hydrogenated amorphous carbon films

M. Koós, I. Pócsik, and L. Tóth

Appl. Phys. Lett. 65, 2245 (1994); http://dx.doi.org/10.1063/1.112777 (3 pages)

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An unexpected effect of laser soaking was observed on the properties of annealed a‐C:H films. The photoluminescence (PL) intensity was increased up to six times and, the spectrum was blue shifted in samples exposed to an unfocused Ar+ laser beam. The time dependence of the PL intensity increase was found to be exponential up to saturation with characteristic times around 103 s. The observed changes were influenced by illumination intensity and sample properties. These results are corroborated by a PL mechanism when excitation and recombination take place on π‐bonded clusters. © 1994 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.66.Jg Amorphous semiconductors; glasses
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Polarized Raman spectroscopy of chemically vapor deposited diamond films

S. Prawer, K. W. Nugent, and P. S. Weiser

Appl. Phys. Lett. 65, 2248 (1994); http://dx.doi.org/10.1063/1.112778 (3 pages)

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Polarized micro‐Raman spectra of chemically vapor deposited diamond films are presented. It is shown that important parameters often extracted from the Raman spectra such as the ratio of the diamond to nondiamond component of the films and the estimation of the level of residual stress depend on the orientation of the diamond crystallites with respect to the polarization of the incident laser beam. The dependence originates from the fact that the Raman scattering from the nondiamond components in the films is almost completely depolarized while the scattering from the diamond components is strongly polarized. The results demonstrate the importance of taking polarization into account when attempting to use Raman spectroscopy in even a semiquantitative fashion for the assessment of the purity, perfection, and stress in chemical vapor deposition diamond films. © 1994 American Institute of Physics.
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78.30.Hv Other nonmetallic inorganics
78.66.Db Elemental semiconductors and insulators
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

3.9‐μm InAsSb/AlAsSb double‐heterostructure diode lasers with high output power and improved temperature characteristics

H. K. Choi, G. W. Turner, and Z. L. Liau

Appl. Phys. Lett. 65, 2251 (1994); http://dx.doi.org/10.1063/1.112779 (3 pages)

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Double‐heterostructure diode lasers emitting at ∼3.9 μm have exhibited pulsed operation at temperatures up to 170 K and cw operation up to 105 K, with single‐ended cw output power of 30 mW at 70 K. The laser structure, grown on GaSb substrates by molecular‐beam epitaxy, has an InAsSb active layer and AlAsSb cladding layers. The lowest pulsed threshold current density is 36 A/cm2 obtained at 60 K. The characteristic temperature is 20 K over the entire temperature range. © 1994 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Minimum detectable displacement in near‐field scanning optical microscopy

Fred F. Froehlich and Tom D. Milster

Appl. Phys. Lett. 65, 2254 (1994); http://dx.doi.org/10.1063/1.112735 (3 pages)

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The probe‐to‐sample separation in near‐field scanning optical microscopes can be regulated by a noncontact atomic shear force sensing scheme that allows simultaneous acquisition of optical and shear force images. We have measured the minimum detectable displacement that can be achieved with a scheme based on diffracting a focused laser beam from the vibrating probe. The minimum detectable displacement determines the smallest resolvable change in force acting on the probe. The measured shot‐noise‐limited value is 2.8×10−3 mathrms/√Hz, and the practical sensitivity is limited by thermal vibration noise to 7×10−3 mathrms/√Hz. These values compare well with those calculated theoretically. © 1994 American Institute of Physics.
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07.60.Pb Conventional optical microscopes
68.37.-d Microscopy of surfaces, interfaces, and thin films

High‐resolution spectroscopy using high‐order derivative techniques

A. N. Dharamsi and Y. Lu

Appl. Phys. Lett. 65, 2257 (1994); http://dx.doi.org/10.1063/1.112736 (3 pages)

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A novel technique, employing high‐order derivative absorption spectroscopy, is used to demonstrate that the resolution of nearly overlapping lines, with disparate oscillator strengths, can be obtained. The method employs tunable diode lasers and does not require expensive wavelength‐resolution apparatus. An experimental demonstration involving nearly overlapping lines of the weak (doubly forbidden by the spin selection rule and the lack of an electric dipole oscillator strength) A band of molecular oxygen is provided. The advantages of the method in being able to inexpensively monitor the densities (and other properties) of more than one specie simultaneously, and in the investigation of line‐shape profiles, are briefly discussed also. © 1994 American Institute of Physics.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
42.62.Fi Laser spectroscopy
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
07.77.-n Atomic, molecular, and charged-particle sources and detectors
37.20.+j Atomic and molecular beam sources and techniques

Theoretical investigation of minority carrier leakages of high‐power 0.8 μm InGaAsP/InGaP/GaAs laser diodes

J. Diaz, I. Eliashevich, H. Yi, X. He, M. Stanton, M. Erdtmann, L. Wang, and M. Razeghi

Appl. Phys. Lett. 65, 2260 (1994); http://dx.doi.org/10.1063/1.112738 (3 pages)

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We report a theoretical model that accurately describes the effects of minority carrier leakage from the InGaAsP waveguide into InGaP cladding layers in high‐power aluminum‐free 0.8 μm InGaAsP/InGaP/GaAs separate confinement heterostructure lasers. Current leakage due to the relatively low band‐gap discontinuity between the active region and the InGaP barrier can be eliminated by employing laser diodes with cavity length longer than 500 μm. Experimental results for lasers grown by low‐pressure metalorganic chemical vapor deposition are in excellent agreement with the theoretical model. © 1994 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

High quality wavelength tuned multiquantum well GaInAs/GaInAsP lasers fabricated using photoabsorption induced disordering

A. McKee, C. J. McLean, A. C. Bryce, R. M. De La Rue, J. H. Marsh, and C. Button

Appl. Phys. Lett. 65, 2263 (1994); http://dx.doi.org/10.1063/1.112741 (3 pages)

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Broad area oxide strip lasers have been fabricated from GaInAs/GaInAsP multiquantum well laser material which has undergone various degrees of intermixing by photoabsorption induced disordering. This process provides an effective way of altering the emission wavelength of lasers fabricated from a single epitaxial wafer, and we have demonstrated blue shifts of up to 160 nm in lasing spectra. The band gap tuned lasers are also assessed in terms of threshold current density, internal quantum efficiency, and internal loss and it is shown that good device performance is maintained. © 1994 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

New method for the study of mirror heating of a semiconductor laser diode and for the determination of thermal diffusivity of the entire structure

M. Bertolotti, G. L. Liakhou, R. Li Voti, C. Sibilia, A. Syrbu, and R. P. Wang

Appl. Phys. Lett. 65, 2266 (1994); http://dx.doi.org/10.1063/1.112713 (3 pages)

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A new method based on the photothermal deflection technique is described to determine the mirror temperature of a semiconductor laser diode as a function of intensity of drive current. The device’s effective thermal diffusivity can also be measured. A short theoretical discussion is presented together with experimental measurements performed on three different kinds of laser diodes. © 1994 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
05.70.Ce Thermodynamic functions and equations of state

Low‐frequency line shapes in guided acoustic‐wave Brillouin scattering

Benjamin I. Greene and Peter N. Saeta

Appl. Phys. Lett. 65, 2269 (1994); http://dx.doi.org/10.1063/1.112714 (3 pages)

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Guided acoustic‐wave Brillouin scattering (GAWBS) measurements were performed on 20‐cm lengths of optical fibers with particular attention focused on the lowest lying resonance. In 125‐μm‐diam silica fibers, this resonance was observed to occur at ∼22 MHz and have a line shape which varied erratically from sample to sample. Significant line shape fluctuations were evident even between sequential samples from the same fiber spool. We speculate that the observed effects are attributable to 0.01–0.1 μm distributed geometric deviations from a perfect cylinder. © 1994 American Institute of Physics.
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42.81.Cn Fiber testing and measurement of fiber parameters
42.81.Dp Propagation, scattering, and losses; solitons
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography

Influence of the high voltage pulse shape on the plasma source ion implantation process

R. R. Speth, G. A. Emmert, and M. J. Goeckner

Appl. Phys. Lett. 65, 2272 (1994); http://dx.doi.org/10.1063/1.112715 (3 pages)

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Using a two fluid model, we investigate the effects on the ion impact energy, of varying the shape of a large, negative, finite rise time, voltage pulse to a planar target. Two pulse shapes are tested, one with exponential shutoff, and one with a powered linear shutoff. For pulse lengths under 50 μs, we find that pulse shaping can be used to make moderate changes in the energy distribution of the implanted ions. For pulse lengths over 50 μs, there is a negligible difference in the ion impact energy distribution for the pulse shapes tested. © 1994 American Institute of Physics.
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52.65.-y Plasma simulation
52.80.-s Electric discharges
81.65.-b Surface treatments

Velocity selection of fast laser ablated aluminum atoms by temporally and spatially specific photoionization

Michel Macler and Mario E. Fajardo

Appl. Phys. Lett. 65, 2275 (1994); http://dx.doi.org/10.1063/1.112716 (3 pages)

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The successful demonstration of velocity selection of fast aluminum atoms by a novel, nonmechanical technique is reported. Pulses of atoms with broad velocity distributions are produced by laser ablation of aluminum metal. A second pulsed laser, delayed by ∼1 μs and crossed at a right angle to the atomic beam, is used to photoionize only those atoms with unwanted velocities, i.e., atoms moving too fast or too slow to be hidden behind an opaque mask placed ∼1 cm from the ablated surface. The photoions are subsequently deflected from the beam by a static magnetic field. Velocity selected Al atom fluxes equivalent to Φ∼1011 atoms/(cm2 eV pulse) at a working distance of 10 cm are demonstrated. © 1994 American Institute of Physics.  
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81.15.Fg Pulsed laser ablation deposition
07.77.-n Atomic, molecular, and charged-particle sources and detectors

Electromagnetic radiation shielding by intrinsically conducting polymers

J. Joo and A. J. Epstein

Appl. Phys. Lett. 65, 2278 (1994); http://dx.doi.org/10.1063/1.112717 (3 pages)

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The shielding efficiency of various intrinsically conducting polymers (ICPs) as a function of their intrinsic properties (conductivity and dielectric constant), thickness, and temperature is determined. Two types of shielding, reflection and absorption, by ICPs are discussed. The high shielding efficiencies of highly conducting doped polyaniline, polypyrrole, and polyacetylene are reported and compared to that of copper. The easy tuning of intrinsic properties by chemical processing suggests the wide applications of ICPs, especially polyaniline for shielding. © 1994 American Institute of Physics.
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78.70.Gq Microwave and radio-frequency interactions
72.40.+w Photoconduction and photovoltaic effects
73.50.Mx High-frequency effects; plasma effects
81.40.Rs Electrical and magnetic properties related to treatment conditions

Observation and electronic characterization of two E′ center charge traps in conventionally processed thermal SiO2 on Si

John F. Conley, P. M. Lenahan, H. L. Evans, R. K. Lowry, and T. J. Morthorst

Appl. Phys. Lett. 65, 2281 (1994); http://dx.doi.org/10.1063/1.112718 (3 pages)

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We demonstrate that at least two varieties of E′ defect precursors exist in a wide variety of conventionally processed thermal SiO2 thin films. We provisionally label the defects EP and E′γp. We find that EP defect capture cross sections exceed the corresponding E′γp values by an order of magnitude, that EP centers are distributed far more broadly throughout the oxides than are the E′γp defects, and that the EP resonance, unlike the E′γp resonance is not stable at room temperature. © 1994 American Institute of Physics.
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71.55.Ht Other nonmetals
73.61.Ng Insulators
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Scanning tunneling microscopy of single‐shell nanotubes of carbon

Maohui Ge and Klaus Sattler

Appl. Phys. Lett. 65, 2284 (1994); http://dx.doi.org/10.1063/1.112719 (3 pages)

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Single‐shell nanotubes of carbon were produced by vapor‐phase condensation on highly oriented pyrolytic graphite (HOPG). Atomic‐resolution images were obtained using a scanning tunneling microscope (STM). The nanotubes are 1 nm wide and up to 20 nm long. The atomic structure of a zigzag configured tube is identified. A C60 hemisphere with threefold symmetry could be the nucleation seed for its growth. © 1994 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Identification of phosphorus in diamond thin films using electron paramagnetic‐resonance spectroscopy

M. E. Zvanut, W. E. Carlos, J. A. Freitas, K. D. Jamison, and R. P. Hellmer

Appl. Phys. Lett. 65, 2287 (1994); http://dx.doi.org/10.1063/1.112720 (3 pages)

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An electron paramagnetic‐resonance study of diamond films doped by implantation of phosphorus during film deposition is reported. Samples with nominal phosphorus concentration between 1016 and 1017 cm−3 exhibit two isotropic lines of equal intensity separated by 27 G. The double‐line spectrum is expected for a nuclear‐spin 1/2 species such as phosphorus. The symmetry of the center and the temperature dependence of the spin concentration suggest that phosphorus forms a substitutional shallow donor in diamond. © 1994 American Institute of Physics.
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61.72.uf Ge and Si
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
71.55.Cn Elemental semiconductors

Structure and conductance evolution of very thin indium oxide films

V. Korobov, M. Leibovitch, and Yoram Shapira

Appl. Phys. Lett. 65, 2290 (1994); http://dx.doi.org/10.1063/1.112721 (3 pages)

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The conductance of transparent conducting oxide films as a function of their coverage has been investigated in situ. The films have been prepared by means of reactive evaporation of In in the presence of oxygen on the glass substrate at different substrate temperatures. The analysis shows that island growth, percolation, coalescence, and ohmic stages can be identified. Critical parameters of the films can be determined during the growth, such as anisotropic and percolative growth modes, resistivity, a lower limit of the effective dopant concentration. The technique shows a potential for in‐depth characterization of very thin film growth. © 1994 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
73.61.-r Electrical properties of specific thin films

Diamagnetic shifts of excitons associated with symmetric and antisymmetric wave functions in coupled InxGa1−xAs‐GaAs quantum wells

D. C. Reynolds, D. C. Look, B. Jogai, and C. E. Stutz

Appl. Phys. Lett. 65, 2293 (1994); http://dx.doi.org/10.1063/1.112997 (3 pages)

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Magneto‐optical data obtained from photoluminescence and photoluminescence excitation measurements performed in the presence of applied magnetic fields were used to determine the diamagnetic shifts of free excitons. The samples studied were coupled InxGa1−xAs–GaAs quantum wells. In all cases the excitons associated with antisymmetric wave functions were found to have larger diamagnetic shifts than the excitons associated with symmetric wave functions. This suggests that the excitons associated with antisymmetric wave functions have a smaller binding energy than excitons associated with symmetric wave functions. These properties are consistent with the fact that excitons associated with antisymmetric wave functions are less confined than excitons associated with the symmetric wave functions. © 1994 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
71.35.-y Excitons and related phenomena
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Role of arsenic in the heteroepitaxy of Ge/GaAs

A. Leycuras and M. G. Lee

Appl. Phys. Lett. 65, 2296 (1994); http://dx.doi.org/10.1063/1.112722 (3 pages)

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During the heteroepitaxy of Ge on GaAs, arsenic diffuses from the GaAs substrates and hence is present in the Ge epilayer. It has been shown that As is incorporated into the layer but also segregated to the surface. The Ge growth is monitored in situ by laser reflectometry, and it gives the thickness, the growth rate, and the morphology of the layer. It is shown here that a too large surface concentration of As due to intentional doping can block the Ge growth. Atomic force micrographs of the morphological defects (pyramidlike void and large steps) suggest that these defects are due to local segregated excess As concentrations caused by the step advance. It is shown that the density of defects as well as the thickness at which they appear are characterized by the same activation energy of ∼1 eV. © 1994 American Institute of Physics.
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68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Direct growth of heteroepitaxial CuInSe2 layers on Si substrates

A. N. Tiwari, S. Blunier, K. Kessler, V. Zelezny, and H. Zogg

Appl. Phys. Lett. 65, 2299 (1994); http://dx.doi.org/10.1063/1.112723 (3 pages)

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Heteroepitaxial CuInSe2 (CIS) layers have been directly grown on Si substrates by molecular beam epitaxy. Epitaxial growth is achieved by using a proper thermal treatment of the substrate prior to the growth and also during the initial stage of CIS growth. (100)‐oriented and (112)‐oriented CIS layers with chalcopyrite crystal structure, and free from impurity phases have been obtained on Si(100) and Si(111), respectively. Different methods have been used to study the growth kinetics and structural quality of the epitaxial layers. Twinning in (112)‐oriented CIS layers depends on the deposition recipe. A Rutherford backscattered ion channeling minimum yield of about 13%, and an x‐ray rocking‐curve width of about 900 arcsec have been measured for a 0.4 μm thick heteroepitaxial CIS(112) layer on Si(111) substrate. © 1994 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers

F. A. Ponce, J. S. Major, W. E. Plano, and D. F. Welch

Appl. Phys. Lett. 65, 2302 (1994); http://dx.doi.org/10.1063/1.112724 (3 pages)

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The crystalline structure near the substrate interface has been studied for AlGaN films grown on (0001) sapphire substrates by metalorganic chemical vapor deposition, using AlN buffer layers. Transmission electron lattice images show that the sapphire/AlN interface is coherent, with misfit dislocations separated by 2.0 nm, corresponding to relaxed bulk lattice parameters. The interface between the buffer layer and the AlGaN film is discussed. The defect structure of the epilayer near the substrate interface consists mostly of dislocations and stacking faults lying on basal planes. © 1994 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P. A. Stolk, H.‐J. Gossmann, and J. M. Poate

Appl. Phys. Lett. 65, 2305 (1994); http://dx.doi.org/10.1063/1.112725 (3 pages)

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Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing, due to Si interstitials being emitted from the region of the implant damage. The structural source of these interstitials has not previously been identified. Quantitative transmission electron microscopy measurements of extended defects are used to demonstrate that TED is caused by the emission of interstitials from specific defects. The defects are rodlike defects running along 〈110〉 directions, which consist of interstitials precipitating on {311} planes as a single monolayer of hexagonal Si. We correlate the evaporation of {311} defects during annealing at 670 and 815 °C with the length of the diffusion transient, and demonstrate a link between the number of interstitials emitted by the defects, and the flux of interstitials driving TED. Thus not only are {311} defects contributing to the interstitial flux, but the contribution attributable to {311} defect evaporation is sufficient to explain the whole of the observed transient. The {311} defects are the source of the interstitials. © 1994 American Institute of Physics.
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61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities

Color variation with electroluminescent organic semiconductors in multimode resonant cavities

A. Dodabalapur, L. J. Rothberg, and T. M. Miller

Appl. Phys. Lett. 65, 2308 (1994); http://dx.doi.org/10.1063/1.112726 (3 pages)

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The range of possibilities in controlling the color of an organic semiconductor based light emitter diode (LED) by incorporating the active layers in a multimode Fabry–Pérot cavity is demonstrated. The combination of carefully designed multimode microcavities and electroluminescent organic semiconductors makes possible the realization of mixed colors such as white, purple, etc. with a single LED. The parameters affecting the color include the total optical thickness of the device and the position of the electromagnetic‐field antinodes with respect to the location of the emitting dipoles. The electrical characteristics and quantum efficiency of such devices are also reported. © 1994 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

Optimization of growth conditions for strain compensated Ga0.32In0.68As/Ga0.61In0.39As multiple quantum wells

A. D. Smith, A. T. R. Briggs, K. Scarrott, Xiao Zhou, and U. Bangert

Appl. Phys. Lett. 65, 2311 (1994); http://dx.doi.org/10.1063/1.112727 (3 pages)

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The results of an investigation into the growth of Ga0.32In0.68As/Ga0.61In0.39As strain compensated multiple quantum well stacks are presented. We show that these structures, which contain alloys that are not prone to compositional clustering, do suffer from thickness modulated growth. A growth strategy has been developed to inhibit this phenomenon and a 50 well, strain compensated stack has been grown with planar and abrupt interfaces. © 1994 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology

Room‐temperature electroluminescence at wavelengths of 5–7 μm from HgCdTe heterostructure diodes

T. Ashley, C. T. Elliott, N. R. Gordon, R. S. Hall, C. D. Maxey, and B. E. Matthews

Appl. Phys. Lett. 65, 2314 (1994); http://dx.doi.org/10.1063/1.112728 (3 pages)

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Room‐temperature electroluminescence at peak wavelengths of 5–7 μm has been observed in metalorganic vapor phase epitaxy‐grown mercury cadmium telluride, fully impurity doped, heterostructure, mesa diodes. The internal quantum efficiency at low injection for 5 μm emission is around 4×10−4. Maximum output power at 295 K is 6 nW from an 80 μm diameter device (120 μW cm−2) at 50% duty cycle. The dependence of intensity on current, the emission spectra, and an infrared microscope image of the emission are presented. © 1994 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Hf II-VI semiconductors
78.60.Fi Electroluminescence
78.30.Fs III-V and II-VI semiconductors

Low‐temperature epitaxial growth and photoluminescence characterization of GaN

A. Dissanayake, J. Y. Lin, H. X. Jiang, Z. J. Yu, and J. H. Edgar

Appl. Phys. Lett. 65, 2317 (1994); http://dx.doi.org/10.1063/1.112729 (3 pages)

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Epitaxial layers of GaN on sapphire substrates have been grown by metalorganic chemical‐vapor deposition at a deposition temperature as low as 400 °C, which is the lowest temperature for successful epitaxial growth of GaN by any technique. This is achieved by controlling the low flow rate of the source gases and by first depositing an AlN buffer layer at 400 °C. Low‐temperature photoluminescence measurements have been employed to study the optical properties of the films deposited at different temperatures. © 1994 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors
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