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14 Nov 1994

Volume 65, Issue 20, pp. 2507-2614

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Factors determining the composition of strained GeSi layers grown with disilane and germane

D. J. Tweet, T. Tatsumi, H. Hirayama, K. Miyanaga, and K. Terashima

Appl. Phys. Lett. 65, 2579 (1994); http://dx.doi.org/10.1063/1.112644 (3 pages) | Cited 9 times

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Growth rates and compositions are reported for GeSi alloy films and superlattices epitaxially grown on both Ge(100) and Si(100) substrates using disilane and germane source gases in an ultrahigh vacuum chemical vapor deposition chamber. Although the growth rate changes rapidly with temperature the composition is nearly independent of it. Specifically, we find that the order of the adsorption reaction for disilane and germane is the same, resulting in the composition being determined by the partial pressures and by the ratio of the adsorption reaction rate constants. This ratio depends very weakly on temperature, if at all, and appears to vary slightly with the layer composition. © 1994 American Institute of Physics.
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68.55.Nq Composition and phase identification
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Local Ga implantation with focused ion beam and ambipolar lateral carrier transport in strained Si1−xGex /Si quantum wells

A. Okubo, S. Fukatsu, and Y. Shiraki

Appl. Phys. Lett. 65, 2582 (1994); http://dx.doi.org/10.1063/1.112645 (3 pages) | Cited 2 times

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Lateral carrier diffusion in a strained Si1−xGex/Si quantum well (QW) is reported using a periodic two‐dimensional grating geometry defined by focused ion beam local‐Ga‐implantation. With systematically changing the grating period, we observed a clear dominance switch of steady‐state photoluminescence (PL) intensity between defect‐related luminescence from Ga‐implanted grating stripes and PL emanating from the centered QW region. Fitting to a simple diffusion model, the lateral diffusion length was found to extend to several microns at low temperatures, whereas it increases with temperature up to 58 K. © 1994 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.72.up Other materials
78.55.Hx Other solid inorganic materials

Digital etching of GaAs using Se molecular beam and atomic hydrogen beam

Shinichiro Takatani and Takeshi Kikawa

Appl. Phys. Lett. 65, 2585 (1994); http://dx.doi.org/10.1063/1.112603 (3 pages) | Cited 2 times

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A novel digital etching technique for GaAs was investigated. The GaAs surface was first irradiated by a Se molecular beam to form Ga2Se3 on the surface as a result of the Se–As exchange reaction. The surface was then irradiated by an atomic hydrogen (H∗) beam to selectively etch the Ga2Se3 layer. These steps were repeated until etched to the desired depth. An etch rate of about 0.2 nm/cycle was obtained at the substrate temperature of 500 °C. The etch rate was nearly independent of the Se and H∗ irradiation time, suggesting the involvement of a self‐limiting mechanism in the etching process. © 1994 American Institute of Physics.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Improvement of grain size and deposition rate of microcrystalline silicon by use of very high frequency glow discharge

F. Finger, P. Hapke, M. Luysberg, R. Carius, H. Wagner, and M. Scheib

Appl. Phys. Lett. 65, 2588 (1994); http://dx.doi.org/10.1063/1.112604 (3 pages) | Cited 73 times

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The influence of the plasma excitation frequency on the growth conditions and the material properties of microcrystalline silicon prepared by plasma enhanced chemical vapor deposition at low deposition temperature is investigated. It is found that an increase of the plasma excitation frequency leads to a simultaneous increase of the growth rate, the grain size, and the Hall mobility of microcrystalline silicon. This is attributed to an effective selective etching of disordered material creating more space to develop crystalline grains, while also more species for faster growth of the crystallites are available. © 1994 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Transient component of leakage current in silicon pn junctions

Yoshio Murakami and Takayuki Shingyouji

Appl. Phys. Lett. 65, 2591 (1994); http://dx.doi.org/10.1063/1.112605 (3 pages) | Cited 5 times

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We found that a transient component exists in the pn junction leakage current formed in Czochralski (CZ) silicon wafers. This transient component is found to be an area effect by measuring the area dependence of the leakage current; this can only be observed after a hole injection occurs by applying the appropriate bias to the junction. Furthermore, this component is not observed in epitaxial, float‐zone, or magnetic‐field‐applied Czochralski wafers that have low oxygen concentrations. From the analysis of the time dependence of the current, we concluded that the transient component observed in CZ silicon is hole emission current from oxygen‐related hole traps that have an exponential trap distribution. © 1994 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.55.Cn Elemental semiconductors

Influence of plasma on silicon surface during low‐energy plasma deposition process: The comparative study on Si3N4/Si structures

J. Ivančo, I. Thurzo, and E. Pinčík

Appl. Phys. Lett. 65, 2594 (1994); http://dx.doi.org/10.1063/1.112606 (3 pages) | Cited 3 times

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The use of plasma‐enhanced chemical vapor deposited silicon nitride (Si3N4) in the role of both passivation of semiconductor devices and electrically active layer is primarily determined by the Si3N4/Si interface quality. To enhance the control of the interface formation, we separated the deposition of the Si3N4 into two steps; At the beginning, we deposited a ‘‘shielding’’ Si3N4 layer in the remote mode, including minimal damage of the silicon surface. This layer would hamper the deterioration of the insulator/semiconductor interface properties by the energetic species bombardment during the following ‘‘quick’’ deposition of a thick bulk dielectric layer in the direct mode. On the base of small‐signal charge deep‐level transient spectroscopy of metal‐nitride‐silicon capacitors, we found the inserted remotely deposited Si3N4 layer with a thickness of about only 2–3 nm is able to effectively avert the energetic radiation‐induced damage of the silicon surface. © 1994 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.80.Jh Ion radiation effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Interfacial layer formation of the CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition

T. W. Kim, H. L. Park, J. Y. Lee, and H. J. Lee

Appl. Phys. Lett. 65, 2597 (1994); http://dx.doi.org/10.1063/1.112579 (3 pages) | Cited 14 times

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CdTe epitaxial films were grown by a simple method of temperature gradient vapor transport deposition on p‐InSb (111) orientation substrates in the growth temperature range between 200 and 300 °C. The stoichiometry of the CdTe/InSb heterostructure was observed by Auger electron spectroscopy, and Auger depth profiles demonstrated that the CdTe/InSb heterointerface was not abrupt. Transmission electron microscopy verified the formation of an interfacial layer in the CdTe/InSb interface and the formation of the stacking faults in the CdTe thin film. These results indicated that the films grown at approximately 270 °C contained a formation problem of an interfacial layer due to interdiffusion from the InSb prior to the growth of the CdTe, and that the interfacial layer might deteriorate the electrical property of the CdTe epitaxial layer. © 1994 American Institute of Physics.
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68.55.-a Thin film structure and morphology

Small mesa structure in split‐gate wires fabricated by scanning tunneling microscope for observing Coulomb blockade effects

Syoji Yamada and Masafumi Yamamoto

Appl. Phys. Lett. 65, 2600 (1994); http://dx.doi.org/10.1063/1.112580 (3 pages) | Cited 3 times

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Fabrication and transport properties of small mesa/split‐gate hybrid structures are described. In order to make small semiconductor mesas acting as an ‘‘impurity’’ at a desired wire surface position, we used a scanning tunneling microscope/scanning electron microscope combined system operated in vacuum. The fabrication method is simple electrical evaporation with a tungsten tip. In a split‐gate quantum wire having a small mesa (70 nm diameter and 15 nm tall) in the center, clear Coulomb blockades and staircases corresponding to the size of the mesa were observed at 0.3 K. © 1994 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Direct observation of potential distribution across Si/Si p‐n junctions using off‐axis electron holography

M. R. McCartney, David J. Smith, Robert Hull, J. C. Bean, E. Voelkl, and B. Frost

Appl. Phys. Lett. 65, 2603 (1994); http://dx.doi.org/10.1063/1.112581 (3 pages) | Cited 50 times

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Off‐axis electron holography was used to observe the potential distribution across a 2×1018/cm3 p‐ and n‐doped Si/Si p‐n junction. With digital image recording and processing, and a novel method for thickness determination, we have successfully extracted two‐dimensional maps of the depletion region potential. For a defect‐free region, we measured relatively abrupt changes in potential in the range 1.0–1.5 V across lateral distances of 20–30 nm. Although influenced by instrumental and sample limitations, these values are reasonably consistent with expected Si junction parameters and thus establish the promise of this technique for measuring potential distributions across device junctions and interfaces. © 1994 American Institute of Physics.
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61.05.J- Electron diffraction and scattering
68.37.-d Microscopy of surfaces, interfaces, and thin films
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

High sensitivity double relaxation oscillation superconducting quantum interference devices

Derk Jan Adelerhof, Jun Kawai, Gen Uehara, and Hisashi Kado

Appl. Phys. Lett. 65, 2606 (1994); http://dx.doi.org/10.1063/1.112582 (3 pages) | Cited 9 times

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Double relaxation oscillation superconducting quantum interference devices (SQUIDs) (DROSs) have been fabricated with estimated relaxation frequencies up to 14 GHz. Both the intrinsic flux noise and the performance in a flux locked loop with direct voltage readout have been studied. In flux locked loop, a noise level of 0.55 μϕ0/√Hz corresponding to an energy sensitivity of 34 h has been obtained for a DROS with a SQUID inductance of 29 pH. The intrinsic sensitivity improves with increasing relaxation frequency, leveling off to a value of 13 h at relaxation frequencies higher than about 3 GHz. © 1994 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
07.55.-w Magnetic instruments and components

Interface roughening in surfactant deposition

Shigehiko Hasegawa, Robert G. Ryland, and Ellen D. Williams

Appl. Phys. Lett. 65, 2609 (1994); http://dx.doi.org/10.1063/1.112583 (3 pages) | Cited 7 times

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We report on a scanning tunneling microscopy study demonstrating silicon mass transport and the resulting roughening of the surface during Sb deposition on Si(111). It is found that small amounts of Sb, which cause the Sb‐induced d‐(7×7) reconstruction, lead to Si island formation due to the replacement of Si atoms by Sb. The succeeding adsorption of Sb causes formation of pits in addition to the islands, in parallel with the structural transition to a (2×1) or (√3×√3) reconstruction. The extent of the roughening is directly related to the changes of surface Si atom density induced by Sb adsorption. © 1994 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Repeatable electron emission from (Pb,La)(Zr,Ti)O3 ferroelectric cathodes using direct‐current reset

T. C. Cavazos, W. L. Wilbanks, C. B. Fleddermann, and D. A. Shiffler

Appl. Phys. Lett. 65, 2612 (1994); http://dx.doi.org/10.1063/1.112584 (3 pages) | Cited 20 times

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The use of ferroelectric (Pb,La)(Zr,Ti)O3 as a cathode material is investigated. It has been suggested in the literature that by rapidly changing or reversing the spontaneous polarization in the ferroelectric, a large charge imbalance can be produced at the surface of the material. The field from this charge imbalance extracts bound carriers from the cathode. An approach to achieving this polarization change by using a negative bias field to preset the material prior to switching is discussed in this letter. This bias field can also be used to control the bound surface charge on the material. Emission currents on the order of 100 mA are observed and the emitted charge is on the order of 30 nC. Measurable emission occurs only when the material is driven into saturation. © 1994 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
84.47.+w Vacuum tubes
77.80.Fm Switching phenomena
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