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26 Dec 1994

Volume 65, Issue 26, pp. 3305-3416

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Wavelength tuning in spherical liquid dye lasers by controlling the cavity Q values

Hiroshi Taniguchi and Humihiro Tomisawa

Appl. Phys. Lett. 65, 3305 (1994); http://dx.doi.org/10.1063/1.112442 (3 pages) | Cited 5 times

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A method for wavelength tuning in spherical liquid dye lasers is reported, due to controlling cavity Q values by injection of scattering particles. The cavity Q value of the sphere dye lasers is controlled by varying the quantity of poly(methyl methacrylate) spheres in the spherical liquid laser solution. Results of the tuning are explained in terms of a general wavelength dependence determined by gain/loss characteristics in the microsphere lasers. © 1994 American Institute of Physics.
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42.55.Mv Dye lasers
42.60.-v Laser optical systems: design and operation

Ultraviolet laser fabrication of strong, nearly polarization‐independent Bragg reflectors in germanium‐doped silica waveguides on silica substrates

Thomas A. Strasser, Turan Erdogan, Alice E. White, Victor Mizrahi, and Paul J. Lemaire

Appl. Phys. Lett. 65, 3308 (1994); http://dx.doi.org/10.1063/1.112443 (3 pages) | Cited 8 times

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Strong Bragg reflectors (≳4 nm width) have been fabricated in Ge‐doped silica waveguides on silica substrates by ultraviolet (UV)‐induced refractive index change. Index changes in excess of 3×10−3 were obtained by deuterium sensitization. The passband quality, polarization dependence, and loss of the reflectors are reported. © 1994 American Institute of Physics.
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42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Gn Optical waveguides and couplers

Dispersion of thermo‐optic coefficients in a potassium niobate nonlinear crystal

Gorachand Ghosh

Appl. Phys. Lett. 65, 3311 (1994); http://dx.doi.org/10.1063/1.112444 (3 pages) | Cited 5 times

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The thermo‐optic coefficients, i.e., the variation of refractive index with temperature (dn/dT) for potassium niobate crystal, KNbO3, are analyzed critically by use of a physically meaningful model. This model is based on the thermal expansion coefficient, and the optical band gaps, such as excitonic and isentropic instead of the consideration of the spontaneous polarization as suggested earlier. The computed optical constants have been used to calculate refractive indices for any wavelength from 0.4 to 3.4 μm at any operating temperature within orthorhombic phase accurately. © 1994 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Generalized breakdown voltage characteristic of the pseudospark

M. J. Rhee and C. J. Liu

Appl. Phys. Lett. 65, 3314 (1994); http://dx.doi.org/10.1063/1.112445 (3 pages) | Cited 4 times

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A simple empirical scaling law is determined for the pseudospark breakdown voltage characteristic that includes the effect of the cavity dimension. It is found that the breakdown voltage characteristic has two distinctive regimes: the breakdown voltage is a function of the product of the gas pressure and the anode–cathode distance pd and a function of the product p2d for the gap distance greater than and less than approximately three times the cavity diameter, respectively. © 1994 American Institute of Physics.
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.75.Kq Plasma switches (e.g., spark gaps)
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Surface scattering of x rays from InP (001) wafers

J. H. Li, S. F. Cui, M. Li, C. R. Li, Z. H. Mai, Y. T. Wang, and Y. Zhuang

Appl. Phys. Lett. 65, 3317 (1994); http://dx.doi.org/10.1063/1.112446 (3 pages) | Cited 1 time

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We have studied the surface scattering of x rays from mechanical‐chemical polished InP (001) wafers with sulfur and/or iron doping. The scattering intensities in the scans transverse to the specular reflection rod were found to contain two components. A simple surface model was proposed to explain the experimental data. The results were also compared with those obtained from crystal truncation rod measurements. © 1994 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments
78.70.Ck X-ray scattering

Power saturation and the effect of argon on the electron spin resonance of diamond deposited from a microwave plasma

P. B. Lukins and J. Khachan

Appl. Phys. Lett. 65, 3320 (1994); http://dx.doi.org/10.1063/1.112403 (3 pages) | Cited 5 times

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Electron spin resonance (ESR) of microwave plasma chemical vapor deposition diamond shows peaks associated with (i) a P1 substitutional nitrogen defect center, (ii) spin‐spin interactions between the paramagnetic sites and neighboring protons, and (iii) a possible contribution from graphitic impurities or amorphous carbon. The P1 spectrum saturates at powers of the order of a few microwatts in contrast to other spectral components which do not display significant saturation. As a result, caution must be exercised when using ESR as a quantitative measure of diamond quality. Films grown from a gas mixture which includes argon do not show the P1 structure or its associated saturation effects. Instead, argon appears to etch or exclude nitrogen from the film leaving carbon‐based radicals as the main paramagnetic species in the material. © 1994 American Institute of Physics.
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61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.30.Hv Other nonmetallic inorganics

Room‐temperature characterization of InGaAs/AlAs multiple quantum well p‐i‐n diodes

M. Ghisoni, G. Parry, L. Hart, C. Roberts, and P. N. Stavrinou

Appl. Phys. Lett. 65, 3323 (1994); http://dx.doi.org/10.1063/1.112404 (3 pages) | Cited 3 times

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We report the growth and fabrication of strained InxGa1−xAs/AlAs multiple quantum well p‐i‐n diodes, where 5.6%<x<15.3%. Characterization via high‐resolution x‐ray diffraction shows that for the higher indium composition, partial relaxation of the strain has occurred. Using photocurrent spectroscopy, we demonstrate that all the samples studied (whether partially relaxed or not) show (i) strong room‐temperature excitonic features and (ii) under an applied electric field, a strong quantum confined Stark effect with retention of clearly resolvable excitons for fields up to ≊300 kV/cm. Both these results can be attributed to the substantial confining potential caused by our use of AlAs barriers. The results demonstrate that the system has potential use for the production of optical modulators. © 1994 American Institute of Physics.
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78.66.Fd III-V semiconductors
68.55.-a Thin film structure and morphology
42.79.Hp Optical processors, correlators, and modulators
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Pulse measurements on ferroelectric capacitors simulating memory switching

G. J. M. Dormans and P. K. Larsen

Appl. Phys. Lett. 65, 3326 (1994); http://dx.doi.org/10.1063/1.112381 (3 pages) | Cited 5 times

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Pulse switching investigations of ferroelectric PbZr0.44Ti0.56O3 capacitors prepared by organometallic chemical vapor deposition were done to simulate a ferroelectric memory. The released charge from the ferroelectric capacitor was measured with a reference capacitor, representing the bitline capacitances in a memory. A large reference capacitor will result in complete switching at low voltages, but gives a small detection signal. For a small reference capacitor partial switching and substantial backswitching of the ferroelectric material occurs. Here, a higher detection signal and improved endurance (≳1012 cycles) are found. Scaling the results indicates the feasibility of 0.2 μm2 capacitors operating at 3 V. © 1994 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.80.Fm Switching phenomena
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
73.40.Rw Metal-insulator-metal structures

Interface roughness scattering in GaAs–AlGaAs modulation‐doped heterostructures

Bin Yang, Yong‐hai Cheng, Zhan‐guo Wang, Ji‐ben Liang, Qi‐wei Liao, Lan‐ying Lin, Zhan‐ping Zhu, Bo Xu, and Wei Li

Appl. Phys. Lett. 65, 3329 (1994); http://dx.doi.org/10.1063/1.112382 (3 pages) | Cited 10 times

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We have studied the influence of interface roughness scattering on the mobility of two‐dimensional electron gas (2DEG) in GaAs–AlGaAs modulation‐doped heterostructures (MDH) both experimentally and theoretically. When the background ionized impurity concentration in the GaAs layer is smaller than 2.5×1015 cm−3, our investigation shows that interface roughness scattering is the dominant scattering mechanism in the high 2DEG density (Ns≥5×1011 cm−2) GaAs–AlGaAs MDH. We also demonstrate that interface roughness scattering is about an order of magnitude stronger than alloy disorder scattering in GaAs–AlGaAs MDH if the AlGaAs/GaAs interface fluctuation is only one monolayer of GaAs. © 1994 American Institute of Physics.
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72.20.Dp General theory, scattering mechanisms
72.20.Fr Low-field transport and mobility; piezoresistance
73.50.Dn Low-field transport and mobility; piezoresistance

High efficiency submicron light‐emitting resonant tunneling diodes

H. Buhmann, L. Mansouri, J. Wang, P. H. Beton, L. Eaves, and M. Henini

Appl. Phys. Lett. 65, 3332 (1994); http://dx.doi.org/10.1063/1.112383 (3 pages) | Cited 2 times

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We have fabricated GaAs/AlAs p‐i‐n double‐barrier resonant tunneling diodes with lateral dimensions down to 0.5 μm. There are significant differences in the electroluminescence spectra of these diodes as compared with large area diodes fabricated from the same heterostructure. In particular, a red shift of the quantum well emission line is observed together with an additional spectral line which is attributed to spatially indirect recombination. Furthermore, there is a strong increase in the low‐temperature electroluminescence efficiency for the smallest devices. © 1994 American Institute of Physics.
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78.66.Fd III-V semiconductors
85.60.Jb Light-emitting devices
73.40.Gk Tunneling
78.60.Fi Electroluminescence

Preparation of ultrathin microcrystalline silicon layers by atomic hydrogen etching of amorphous silicon and end‐point detection by real time spectroellipsometry

H. V. Nguyen, Ilsin An, R. W. Collins, Yiwei Lu, M. Wakagi, and C. R. Wronski

Appl. Phys. Lett. 65, 3335 (1994); http://dx.doi.org/10.1063/1.113024 (3 pages) | Cited 25 times

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The etching of hydrogenated amorphous silicon (a‐Si:H) in thermally generated atomic hydrogen has been investigated in detail, utilizing real time spectroellipsometry for characterization and end‐point detection. When properly controlled, etching can yield ultrathin microcrystalline Si (μc‐Si:H) films of relatively high density on virtually any substrate material. These films are unique in that their microstructure is established by the crystallization of the near‐surface a‐Si:H, rather than by the nucleation of crystallites on the substrate, as occurs for plasma‐enhanced chemical vapor‐deposited μc‐Si:H films. © 1994 American Institute of Physics.
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81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Molecular beam epitaxial growth of high quality InSb

E. Michel, G. Singh, S. Slivken, C. Besikci, P. Bove, I. Ferguson, and M. Razeghi

Appl. Phys. Lett. 65, 3338 (1994); http://dx.doi.org/10.1063/1.112384 (3 pages) | Cited 17 times

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In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395 °C and a III/V incorporation ratio of 1:1.2 had an x‐ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V−1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date. © 1994 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Charging dynamics of integrated circuit passivation layer probe holes in the electron beam tester

J. C. H. Phang, K. S. Sim, and D. S. H. Chan

Appl. Phys. Lett. 65, 3341 (1994); http://dx.doi.org/10.1063/1.112385 (3 pages)

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Numerical simulations show that the sidewall of a probe hole in the SiO2 passivation layer of an integrated circuit charges negatively when a 1 keV beam is probing a test point inside the probe hole. The negative charges on the sidewalls create a local electric field that suppresses the low‐energy secondary electrons and at the same time focuses the higher‐energy secondary electrons. These potential barrier and lens effects degrade the detected secondary electron signal and may have significant consequences for voltage contrast measurements. © 1994 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
79.20.Hx Electron impact: secondary emission

Enhancement of high‐temperature photoluminescence in strained Si1−xGex/Si heterostructures by surface passivation

A. St. Amour, J. C. Sturm, Y. Lacroix, and M. L. W. Thewalt

Appl. Phys. Lett. 65, 3344 (1994); http://dx.doi.org/10.1063/1.112386 (3 pages) | Cited 14 times

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The photoluminescence from strained Si1−xGex alloy quantum wells on Si(100) has been measured from 6 to 300 K. It is shown that the high‐temperature photoluminescence of Si1−xGex quantum wells can be increased by over an order of magnitude by passivation of the top silicon surface. Through experiments and a model, it is clearly demonstrated that the decay of the Si1−xGex photoluminescence at high temperature is controlled by surface recombination, not by an intrinsic property of Si1−xGex. By applying proper conditions, nearly constant Si1−xGex photoluminescence can be achieved from 77 to 250 K. © 1994 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Characterization of heteroepitaxial CuIn3Se5 and CuInSe2 layers on Si substrates

A. N. Tiwari, S. Blunier, M. Filzmoser, H. Zogg, D. Schmid, and H. W. Schock

Appl. Phys. Lett. 65, 3347 (1994); http://dx.doi.org/10.1063/1.112387 (3 pages) | Cited 23 times

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Epitaxial CuIn3Se5 layers were grown on CuInSe2/Si(111) substrates by molecular beam epitaxy. Photoemission spectra of (112)‐oriented CuIn3Se5 and CuInSe2 epitaxial layers were studied and the structures in the upper valence band are correlated with the Cu 3d and Se 4p density of states. The main valence band of CuInSe2 exhibits the three peak structure (consistent with theory) while a broadband with a shoulder is observed for the CuIn3Se5 phase. Electron channeling and x‐ray diffraction confirmed the epitaxial growth of (112)‐oriented layer. Surface and bulk composition analyses, position of valence band maxima, and a Se related vibrational mode at 153 cm−1 in Raman scattering measurements established the growth of the CuIn3Se5 phase. © 1994 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
84.60.Jt Photoelectric conversion

Blue electroluminescence from porous silicon carbide

Hidenori Mimura, Takahiro Matsumoto, and Yoshihiko Kanemitsu

Appl. Phys. Lett. 65, 3350 (1994); http://dx.doi.org/10.1063/1.112388 (3 pages) | Cited 28 times

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The possibility of a new blue light emitting diode (LED) using porous SiC as a luminescent material is described. The porous SiC is electrochemically formed on a single crystalline 6H‐SiC substrate fabricated by the Acheson method. The diode structure is a Schottky‐like junction between indium tin oxide (ITO) and porous SiC. The ITO/porous SiC junction shows a rectification behavior and a blue electroluminescence (EL) under the forward direction. © 1994 American Institute of Physics.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Defect alignment in grain boundaries as quantum wells

Herbert F. Mataré

Appl. Phys. Lett. 65, 3353 (1994); http://dx.doi.org/10.1063/1.112389 (3 pages) | Cited 1 time

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Improvements of optical absorption bandwidth in high‐density dislocation layers and enhanced solar‐cell efficiency through application of ion‐implanted defect layers as well as the electro‐optical properties of porous silicon, are seen to connect earlier results on grain boundaries with defined parameters and their electro‐optic properties with quantum wells (QW). These well‐defined grain boundaries are also those which enhance optical sensitivity and critical current (Ic) densities in high‐temperature superconductors (HTS) by a flux‐pinning effect and are useful for the production of superconducting quantum‐interference devices (SQUIDS). © 1994 American Institute of Physics.
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61.72.Mm Grain and twin boundaries
61.72.Lk Linear defects: dislocations, disclinations
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Optical transitions in strained Si1−yCy layers on Si(001)

W. Kissinger, M. Weidner, H. J. Osten, and M. Eichler

Appl. Phys. Lett. 65, 3356 (1994); http://dx.doi.org/10.1063/1.112390 (3 pages) | Cited 25 times

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The effect of the carbon content on the optical transitions of Si1−yCy layers grown pseudomorphically on Si(001) substrates was investigated by spectroscopic ellipsometry and electroreflectance spectroscopy for 0≤y≤0.012 in the energy range between 3 and 5 eV. The ellipsometry data show a decrease of the slope of the dielectric function near the critical points and a tendency of a critical point shift with increasing carbon content. This shift was analyzed by measuring and fitting electroreflectance spectra at 80 K, resulting in a weak and linear dependence on the carbon content at all transitions. The E1 critical point energy increases with an increasing carbon content while the E2 energy decreases, both at a rate of about 30 meV/%[C]. The E′0 transition decreases at a smaller rate of about 20 meV/%[C]. The results are discussed in the light of previous discussions and a simple estimate based on silicon deformation potentials. © 1994 American Institute of Physics.
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78.66.Li Other semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Subnanosecond photovoltaic response in 6H–SiC

Stephen E. Saddow, Pak S. Cho, Julius Goldhar, Chi H. Lee, and Phillip G. Neudeck

Appl. Phys. Lett. 65, 3359 (1994); http://dx.doi.org/10.1063/1.112391 (3 pages) | Cited 1 time

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We report observation of a subnanosecond photovoltaic response in 6H–SiC illuminated with an ultraviolet laser. Using different incident laser energies, the transient photovoltaic response in 6H–SiC was investigated and photovoltaic electrical pulses with various durations and amplitudes observed. Subnanosecond electrical pulses, with amplitudes of hundreds of millivolts, were generated from 6H–SiC lateral photoconductive switches excited by a nanosecond laser pulse without external bias. Modeling of this fast photovoltaic response has been performed and good qualitative agreement obtained. © 1994 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects

Hole effective mass in remote doped Si/Si1−xGex quantum wells with 0.05≤x≤0.3

T. E. Whall, A. D. Plews, N. L. Mattey, and E. H. C. Parker

Appl. Phys. Lett. 65, 3362 (1994); http://dx.doi.org/10.1063/1.112392 (3 pages) | Cited 13 times

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The effective masses in remote doped Si/Si1−xGex hole quantum wells with 0.05≤x≤0.3, have been determined from the temperature dependence of the Shubnikov–de Haas oscillations. The values are lower than previously observed by other workers, but still somewhat higher than the theoretical Γ‐point values for the ground‐state heavy hole subband. The differences are attributed to finite carrier sheet densities and can be satisfactorily accounted for by nonparabolicity corrections. © 1994 American Institute of Physics.
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71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Infrared absorption frequencies and oscillator strengths of acceptors confined in GaAs/AlGaAs quantum wells

Q. X. Zhao, B. Monemar, P. O. Holtz, M. Willander, and Alfredo Pasquarello

Appl. Phys. Lett. 65, 3365 (1994); http://dx.doi.org/10.1063/1.112393 (3 pages) | Cited 1 time

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Infrared absorption of acceptors confined in a GaAs/AlGaAs quantum well (QW) has been calculated with and without magnetic field perturbation. The absorption frequency and oscillator strength of the dominating infrared transitions of acceptors in the QW are examined. The results show that the frequency of the acceptor transition is blueshifted with decreasing well width up to 50 Å. The normal incident absorption oscillator strength of the dominating acceptor transition first increases with decreasing well width, reaches the maximum of about 90 Å wide QW, and then decreases with further decreasing well width. © 1994 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Surface cleaning of GaAs by in situ chemical beam etching

T. H. Chiu, W. T. Tsang, M. D. Williams, C. A. C. Mendonça, K. Dreyer, and F. G. Storz

Appl. Phys. Lett. 65, 3368 (1994); http://dx.doi.org/10.1063/1.112394 (3 pages) | Cited 4 times

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Chemical beam etching using AsCl3 has been shown to provide accurate etch rate control at the atomic level, mask feature transfer at submicron scale, and a clean damage‐free surface for regrowth. The etching process can be maintained in a two‐dimensional fashion, if the etching conditions are designed to enable efficient cation diffusion that smooths the microroughness. In this work, we show from etching the heavily Be‐doped GaAs surface that the in situ etching prior to growth is potentially a useful method for etch cleaning the surface. However, the effectiveness of this method depends on the ability to form volatile species with the contaminant in competition with the formation of group III chloride. © 1994 American Institute of Physics.
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81.65.-b Surface treatments

Relation between porous silicon photoluminescence and its voltage‐tunable electroluminescence

A. Bsiesy, F. Muller, M. Ligeon, F. Gaspard, R. Hérino, R. Romestain, and J. C. Vial

Appl. Phys. Lett. 65, 3371 (1994); http://dx.doi.org/10.1063/1.112395 (3 pages) | Cited 9 times

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The voltage‐tunable electroluminescence (VTEL) observed on porous silicon‐electrolyte system is investigated in relation with the material photoluminescence (PL). It is shown that the PL line is the envelope of all the emitted EL spectra obtained upon the bias variation. Consequently, a blueshift of the (PL) line leads to a similar shift of all the corresponding EL lines. This strongly suggests a common origin of these two phenomenon. Moreover, this study seems to indicate that the VTEL of porous silicon is related to the size and efficiency distributions of the silicon nanocrystallites associated with an electrically induced selective carrier injection. © 1994 American Institute of Physics.
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78.60.Fi Electroluminescence
78.55.Hx Other solid inorganic materials

Low‐pressure metalorganic vapor phase epitaxy of GaAs using monoethylarsine

Tetsu Kachi

Appl. Phys. Lett. 65, 3374 (1994); http://dx.doi.org/10.1063/1.112396 (3 pages)

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Monoethylarsine has been used for the growth of GaAs by low‐pressure metalorganic vapor phase epitaxy in a pressure regime of 400–650 Pa. This operating window promotes improved surface morphologies and higher growth rates (2–3 times) compared to comparable growths at higher operating pressures. Photoluminescence analysis of epitaxial material grown in this pressure range indicates the crystal quality of these films to be optimum. These results are attributed to the suppression of parasitic gas phase side reactions between the arsenic and gallium precursors. © 1994 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors

Real‐time electron cyclotron oscillations observed by terahertz techniques in semiconductor heterostructures

D. Some and A. V. Nurmikko

Appl. Phys. Lett. 65, 3377 (1994); http://dx.doi.org/10.1063/1.112397 (3 pages) | Cited 14 times

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We demonstrate the application of optoelectronically generated terahertz electromagnetic transients to real‐time detection of coherent oscillations by free electrons in modulation doped semiconductor heterostructures, due to the cyclotron resonance. The damping of these oscillations gives a direct measure of the electron dephasing which can be compared with scattering rates obtained from dc transport measurements. © 1994 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
72.30.+q High-frequency effects; plasma effects
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
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