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Applied Physics Letters / Volume 65 / Issue 26

Appl. Phys. Lett. 65, 3338 (1994); http://dx.doi.org/10.1063/1.112384 (3 pages)

Molecular beam epitaxial growth of high quality InSb

E. Michel, G. Singh, S. Slivken, C. Besikci, P. Bove, I. Ferguson, and M. Razeghi

The Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208

(Received 28 July 1994; accepted 24 October 1994)

In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395 °C and a III/V incorporation ratio of 1:1.2 had an x‐ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V−1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date. © 1994 American Institute of Physics.

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KEYWORDS and PACS

Keywords

INDIUM ANTIMONIDES, MOLECULAR BEAM EPITAXY, RHEED, OPTIMIZATION, X−RAY DIFFRACTION, MORPHOLOGY, HALL EFFECT, CARRIER MOBILITY

PACS

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.112384

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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