APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 65 / Issue 26

Appl. Phys. Lett. 65, 3341 (1994); http://dx.doi.org/10.1063/1.112385 (3 pages)

Charging dynamics of integrated circuit passivation layer probe holes in the electron beam tester

J. C. H. Phang, K. S. Sim, and D. S. H. Chan

Center for IC Failure Analysis and Reliability, Faculty of Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 0511, Singapore

(Received 23 May 1994; accepted 21 October 1994)

Numerical simulations show that the sidewall of a probe hole in the SiO2 passivation layer of an integrated circuit charges negatively when a 1 keV beam is probing a test point inside the probe hole. The negative charges on the sidewalls create a local electric field that suppresses the low‐energy secondary electrons and at the same time focuses the higher‐energy secondary electrons. These potential barrier and lens effects degrade the detected secondary electron signal and may have significant consequences for voltage contrast measurements. © 1994 American Institute of Physics.

KEYWORDS and PACS

Keywords

VLSI, ELECTRON MICROPROBE ANALYSIS, SECONDARY EMISSION, CONNECTORS, NUMERICAL ANALYSIS, COMPUTERIZED SIMULATION, REPAIR, DIAGNOSTIC TECHNIQUES

PACS

  • 85.40.Ls

    Metallization, contacts, interconnects; device isolation

  • 79.20.Hx

    Electron impact: secondary emission

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.112385

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.


Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Charging dynamics of integrated circuit passivation layer probe holes in the electron beam tester
  2. Molecular beam epitaxial growth of high quality InSb
  3. Delineation of semiconductor doping by scanning resistance microscopy
  4. High quality aluminum nitride epitaxial layers grown on sapphire substrates
  5. Direct observation of exciton localization in a GaAs/AlGaAs quantum well
Go to AIP Home
Copyright © American Institute of Physics
close