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1 Aug 1994

Volume 65, Issue 5, pp. 517-650

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High resolution atomic core level spectroscopy with laser harmonics

R. Haight and P. F. Seidler

Appl. Phys. Lett. 65, 517 (1994); http://dx.doi.org/10.1063/1.112283 (3 pages) | Cited 18 times

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High resolution atomic core level spectroscopy is carried out on condensed matter systems using tunable harmonics generated by focusing light from an amplified 150 femtosecond dye laser system operating at 610 nm, into a pulsed source of Ar gas. We show core level spectra collected with the 15th (30.54 eV), 17th (34.61 eV), and 19th (38.68 eV) harmonics of the dye laser light. Each harmonic is separated by 4.07 eV and possesses a narrow energy bandwidth which can be used to generate high resolution core level spectra.
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73.25.+i Surface conductivity and carrier phenomena
78.47.-p Spectroscopy of solid state dynamics
79.60.-i Photoemission and photoelectron spectra
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature

M. Asif Khan, S. Krishnankutty, R. A. Skogman, J. N. Kuznia, D. T. Olson, and T. George

Appl. Phys. Lett. 65, 520 (1994); http://dx.doi.org/10.1063/1.112284 (2 pages) | Cited 49 times

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We report the observation of room temperature violet (415 nm) stimulated emission in the vertical cavity mode from photopumped GaN/In0.25Ga0.75N heterojunctions. The InGaN/GaN heterojunction was deposited over sapphire substrates using low‐pressure metalorganic chemical vapor deposition and was of high enough optical quality to achieve room‐temperature stimulated emission. The observed emission intensity was found to be a nonlinear function of incident optical pump power density. At threshold we observe a clear line narrowing of the output optical signal from 20 to 1.5 nm full width at half‐maximum.
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78.45.+h Stimulated emission
42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors

Blue light generation using a high power tapered amplifier mode‐locked laser

Lew Goldberg and David Mehuys

Appl. Phys. Lett. 65, 522 (1994); http://dx.doi.org/10.1063/1.112285 (3 pages) | Cited 11 times

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Light at 430 nm is generated by frequency doubling the high peak power output of a mode‐locked compound cavity laser based on a tapered GaAlAs amplifier. The laser generated a peak 860 nm power of 12.7 W and pulse energy of 450 pJ. Using a 7.1 mm KNbO3 crystal, 45 mW of average blue light power was produced with a peak power of 1.6 W, minimum pulse length of 8.5 ps, and pulse energy of 30 pJ.
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42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Blue light generation by resonator‐enhanced frequency doubling of an extended‐cavity diode laser

W. J. Kozlovsky, W. P. Risk, W. Lenth, B. G. Kim, G. L. Bona, H. Jaeckel, and D. J. Webb

Appl. Phys. Lett. 65, 525 (1994); http://dx.doi.org/10.1063/1.112286 (3 pages) | Cited 16 times

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Frequency doubling of diode laser radiation was achieved by operating an AR‐coated diode laser in an extended laser cavity which contained a monolithic potassium niobate frequency doubling resonator as an intracavity element. Extended cavity operation ensured that the diode laser would oscillate only at frequencies that were resonant with the intracavity resonator. A diffraction grating was used to ensure single mode oscillation at the wavelength needed for noncritically phase‐matched second harmonic generation. At 100 mA of injection current to the GaAlAs diode laser, 14 mW of 429 nm light were produced.  
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42.55.Px Semiconductor lasers; laser diodes
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Fd III-V semiconductors

Ultrahigh speed performance of a quantum well laser at cryogenic temperatures

Rangchen Yu, Radhakrishnan Nagarajan, T. Reynolds, A. Holmes, J. E. Bowers, S. P. DenBaars, and Chung‐En Zah

Appl. Phys. Lett. 65, 528 (1994); http://dx.doi.org/10.1063/1.112287 (3 pages) | Cited 7 times

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We have systematically studied the high speed performance of a 1.55 μm InGaAsP multiple quantum well laser diode at cryogenic temperatures from 10 to 300 K. We show that the maximum modulation bandwidth of the laser diode increases from 10 GHz at room temperature to over 27 GHz at the vicinity of 100 K. Our analysis indicates that this bandwidth is mainly limited by the device parasitics above 100 K and carrier transport below it.
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78.66.Fd III-V semiconductors
06.60.Jn High-speed techniques (microsecond to femtosecond)
42.55.Px Semiconductor lasers; laser diodes

Laser‐ablation‐assisted‐plasma discharges of aluminum in a transverse‐magnetic field

J. S. Lash, R. M. Gilgenbach, and C. H. Ching

Appl. Phys. Lett. 65, 531 (1994); http://dx.doi.org/10.1063/1.112288 (3 pages) | Cited 15 times

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Laser‐ablation‐assisted‐plasma discharges (LAAPD) have been used to enhance the ionization of laser ablated aluminum metal. Ablation is accomplished by focusing a KrF excimer laser (248 nm, 40 ns, ≤0.4 J) on a solid aluminum target with a fluence of 4 J/cm2. Peak plasma discharge voltage is 1–4 kV and peak plasma current is 0.2–1 kA, while peak power is 0.1–1 MW. Gated emission spectroscopy is used to determine the charge states and the electronic temperatures within the plasma discharge. With unmagnetized discharge parameters of 3 kV and 760 A, the observed light emission is dominated by transitions from Al2+ ions indicating nearly complete ionization of the plume. From the emission spectra intensities, an Al2+ electronic temperature of 3.3 eV is determined. Emission spectra from unmagnetized LAAPD of 1.2 kV and 280 A show no visible Al2+ ion transitions indicating cooler plasma and a lower ionization state. Introducing a 620 G transverse magnetic field (at 1.2 kV, 280 A) enhances the ionization due to the increased electron confinement and leads to the observance of the Al2+ lines as seen with discharges of 3 kV and 760 A.
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81.15.Fg Pulsed laser ablation deposition
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Patterning of self‐assembled alkanethiol monolayers on silver by microfocus ion and electron beam bombardment

Greg Gillen, Scott Wight, Joe Bennett, and Michael J. Tarlov

Appl. Phys. Lett. 65, 534 (1994); http://dx.doi.org/10.1063/1.112289 (3 pages) | Cited 21 times

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Decanethiol [CH3(CH2)9SH] self‐assembled monolayer films on silver substrates have been irradiated in selected areas by focused ion or electron bombardment. Subsequent immersion of the irradiated sample in a solution of a fluoromercaptan [CF3(CF2)2(CH2)2SH] results in attachment of this molecule to the silver surface in the ion or electron‐exposed regions, producing a micrometer spatial‐scale pattern of two chemically distinct alkanethiol monolayers. The coverage of the fluoromercaptan on the bombarded areas was found to reach maximum levels of 70% at ion doses of 6×1013 ions/cm2 and 50% at electron doses of 2×1017 electrons/cm2 as determined by secondary ion mass spectrometry. These methods of maskless patterning may be useful for semiconductor or biosensor device fabrication.
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81.05.Bx Metals, semimetals, and alloys
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Nonlocal electron kinetics in a low‐pressure inductively coupled radio‐frequency discharge

V. I. Kolobov, D. F. Beale, L. J. Mahoney, and A. E. Wendt

Appl. Phys. Lett. 65, 537 (1994); http://dx.doi.org/10.1063/1.112290 (3 pages) | Cited 35 times

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The Boltzmann equation for electrons is analyzed for a low‐pressure inductively coupled rf discharge in argon driven by a planar coil. Spatially resolved probe measurements of the electron distribution function (EDF) indicate that the total energy of electrons is an argument of the EDF. Pressure dependence of the light emission distribution is explained on the basis of nonlocal electron kinetics.
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52.50.Gj Plasma heating by particle beams
52.80.Pi High-frequency and RF discharges
51.10.+y Kinetic and transport theory of gases

Oriented diamond on graphite flakes

T. Suzuki, M. Yagi, K. Shibuki, and M. Hasemi

Appl. Phys. Lett. 65, 540 (1994); http://dx.doi.org/10.1063/1.112291 (3 pages) | Cited 14 times

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Diamond was deposited by the microwave plasma chemical vapor deposition method on a Si(100) substrate on which graphite flakes had been spread with their basal planes parallel to the substrate before deposition. Before diamond deposition, the substrate was preheated at 1200 °C under hydrogen at 60 Torr to clean the surface of graphite flakes. Scanning electron micrographs showed that most of diamond particles were cubo‐octahedral in morphology. The {111} planes of some diamond particles, which were judged by their triangular shape, were often parallel to the (0001) plane of graphite. Furthermore, some 〈111〉‐oriented diamond particles were clearly nucleated at the edge of graphite. The possibility of heteroepitaxy of diamond on graphite was discussed based on crystallographic considerations.  
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73.61.Ey III-V semiconductors
71.55.Eq III-V semiconductors
81.10.Bk Growth from vapor
61.72.uj III-V and II-VI semiconductors

Damage and polymerization by ion bombardment of C60

J. Kastner, H. Kuzmany, and L. Palmetshofer

Appl. Phys. Lett. 65, 543 (1994); http://dx.doi.org/10.1063/1.112954 (3 pages) | Cited 39 times

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Sublimated C60 fullerite films have been implanted with 160−300 keV H, He, C, and Ar ions with doses ranging from 1×1012 to 5×1016 cm−2. Raman scattering showed a structural transformation of the fullerite to amorphous carbon at certain doses depending on the projectile. This amorphization process is correlated to the energy loss by nuclear collisions. Electronic stopping leads to no detectable disruption of fullerene molecules but to a polymerization of C60. This new phase is evidenced by several changes in the Raman spectrum, of which a new line at about 1463 cm−1 is most prominent.
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78.30.Hv Other nonmetallic inorganics
61.80.Jh Ion radiation effects
61.72.up Other materials

Electron microscopic and ion scattering studies of heteroepitaxial tin‐doped indium oxide films

Masayuki Kamei, Yuzo Shigesato, Satoru Takaki, Yasuo Hayashi, Mikio Sasaki, and Tony E. Haynes

Appl. Phys. Lett. 65, 546 (1994); http://dx.doi.org/10.1063/1.112292 (3 pages) | Cited 5 times

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The microstructure of heteroepitaxial tin‐doped indium oxide (ITO) films were studied in detail. The surface morphology of the heteroepitaxial ITO film consisted of square‐shaped, in‐plane oriented subgrains (∼300 Å) in contrast to that of the polycrystalline film (characteristic grain‐subgrain structure). The subgrain boundaries were predominantly formed along the {110} planes in the ITO film and dislocations were observed primarily along the subgrain boundaries. Ion channeling measurements showed the dislocation density of this film to be approximately 3×1010/cm2, and the angular distribution of the ion channeling yield showed that the subgrains are aligned to within better than 0.3° (standard deviation).
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66.30.J- Diffusion of impurities
61.72.J- Point defects and defect clusters
85.40.Bh Computer-aided design of microcircuits; layout and modeling
81.30.Mh Solid-phase precipitation

Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions

Y. Chen, X. Liu, E. Weber, E. D. Bourret, Z. Liliental‐Weber, E. E. Haller, J. Washburn, D. J. Olego, D. R. Dorman, J. M. Gaines, and N. R. Tasker

Appl. Phys. Lett. 65, 549 (1994); http://dx.doi.org/10.1063/1.112293 (3 pages) | Cited 8 times

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The structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions have been studied by transmission electron microscopy, cathodoluminescence (CL), and photoluminescence. In undoped ZnSe epilayers, irregular dislocation segments tending to lie roughly along [100] and [010] directions were observed as well as long straight 60° dislocations along [110] and [110] directions. In N‐doped ([N]≳1×1018 cm−3) ZnSe epilayers, the misfit dislocations were predominantly dissociated into partial dislocations which makes cross slip and formation of irregular dislocations more difficult; only the straight dislocations along [110] and [110] were observed. The CL observations suggest that the irregular dislocations trap carriers more efficiently than the dislocations along 〈110〉.
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73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
61.66.Fn Inorganic compounds
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Quantitative analysis of low‐energy Xe+ ion bombardment damage of Si(100) surfaces using x‐ray photoelectron spectroscopy

Z. H. Lu, D. F. Mitchell, and M. J. Graham

Appl. Phys. Lett. 65, 552 (1994); http://dx.doi.org/10.1063/1.113018 (3 pages) | Cited 2 times

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In situ x‐ray photoelectron spectroscopy has been used to analyze the nature and extent of damage to the Si(100) surfaces bombarded with xenon ions in the energy range 0.25–2 keV. Dramatic changes in the Si 2p core levels were found upon ion bombardment. A curve‐fitting analysis of the core level shows that an amorphous silicon overlayer is formed on the Xe+ ion bombarded surface. The results indicate that these low‐energy Xe+ ions amorphize the surface in a layer‐by‐layer manner and that the depth of damage increases rapidly for ion doses between 1013 and 1015 ions cm−2. At about 1015 ions cm−2 the damage depth reaches a saturation for all ion energies studied. The saturated damage depth is found to increase linearly with ion energy.
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79.60.Ht Disordered structures
61.80.Jh Ion radiation effects
81.65.-b Surface treatments

Van der Waals epitaxy of three‐dimensional CdS on the two‐dimensional layered substrate MoTe2(0001)

T. Löher, Y. Tomm, C. Pettenkofer, and W. Jaegermann

Appl. Phys. Lett. 65, 555 (1994); http://dx.doi.org/10.1063/1.112294 (3 pages) | Cited 6 times

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Epitaxial films of Wurtzite CdS in (0001) orientation have been grown on MoTe2 (0001) substrates in spite of a lattice mismatch of 15%. The film growth was in situ monitored by soft x‐ray photoelectron spectroscopy and low energy electron diffraction. The interface is found to be nonreactive and atomically abrupt. The CdS overlayer tends to grow in three‐dimensional clusters (Volmer–Weber growth mode).  
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68.55.-a Thin film structure and morphology
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Domain inversion in LiNbO3 by proton exchange and quick heat treatment

Yong−yuan Zhu, Shi−ning Zhu, Jing−fen Hong, and Nai−ben Ming

Appl. Phys. Lett. 65, 558 (1994); http://dx.doi.org/10.1063/1.112295 (3 pages) | Cited 18 times

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Experimental studies on the domain inversion in LiNbO3 by proton exchange followed by quick heat treatment was performed. The relationship between the inverted depth and the quick heat treatment conditions was investigated. Using this method, a periodically domain−inverted structure was fabricated. The inverted domains are arc shaped.
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42.82.Et Waveguides, couplers, and arrays
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Manipulation of the Ti/Si reaction paths by introducing an amorphous Ge interlayer

Z. Ma, H. Z. Xiao, L. H. Allen, and B. J. Park

Appl. Phys. Lett. 65, 561 (1994); http://dx.doi.org/10.1063/1.113019 (3 pages) | Cited 1 time

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Evolution of the Ti/a‐Ge/Si trilayer reactions has been investigated using transmission electron microscopy and Auger electron spectroscopy. Instead of amorphous phase formation, as usually observed in the Ti/Si bilayer reaction, the crystalline Ti6Ge5 is the first phase observed during the reaction. Preceding the equilibrium C54‐Ti(Si,Ge)2, a substitutional solid solution type C49‐Ti(Si,Ge)2 forms upon annealing at 550–600 °C, regardless of the replacement of amorphous phase by the crystalline phase. The C49‐to‐C54 polymorphic transformation occurs at ∼650 °C. The reaction path is also correlated with the change in film resistance obtained from a four‐point sheet resistance measurement.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.Fx Diffusion; interface formation
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
73.40.Ns Metal-nonmetal contacts

Nanostructure and chemistry of a (100)MgO/(100)GaAs interface

J. Bruley, S. Stemmer, F. Ernst, M. Rühle, W.‐Y. Hsu, and R. Raj

Appl. Phys. Lett. 65, 564 (1994); http://dx.doi.org/10.1063/1.112296 (3 pages) | Cited 7 times

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High‐resolution transmission electron microscopy (TEM) shows that MgO films, grown on (001) GaAs by magnetron sputtering, are single crystal with a cube‐on‐cube relationship with the substrate, even though they are separated from the substrate by an amorphous interlayer. Scanning TEM–energy dispersive x‐ray and scanning TEM–electron energy loss spectroscopy analysis of the interlayer shows that it consists of the native oxide of GaAs as well as nanocrystalline MgO. It is proposed that epitaxial MgO nucleated at pin holes produced by volatilization of the native oxide.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
81.15.Cd Deposition by sputtering

Strained InAs/InP quantum well heterostructure lasers grown by low‐pressure metalorganic chemical vapor deposition

Q. J. Xing, J. L. Brebner, R. A. Masut, G. Ahmad, G. Zhao, C. A. Tran, and L. Isnard

Appl. Phys. Lett. 65, 567 (1994); http://dx.doi.org/10.1063/1.112297 (3 pages) | Cited 7 times

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This letter reports the successful operation at room temperature of a separate confinement heterostructure InAs/InGaAs/InP strained‐layer multiple quantum well laser grown by low‐pressure metalorganic chemical vapor deposition. The threshold current density was as low as 250 A/cm2 for a 600×200 μm broad area laser device. The characteristic temperature T0 was found to be 190 K between 100 and 130 K, and 147 K between 130 and 300 K. The lasing wavelength was 1.7 μm at room temperature.
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42.55.Px Semiconductor lasers; laser diodes
42.70.Hj Laser materials
78.66.Fd III-V semiconductors

Three‐terminal bias induced dual wavelength semiconductor light emitter

F. E. Reed, D. Zhang, T. Zhang, and R. M. Kolbas

Appl. Phys. Lett. 65, 570 (1994); http://dx.doi.org/10.1063/1.112298 (3 pages)

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A three‐terminal version of a light emitting device, a bias induced color‐tunable emitter (BICE), is reported. The three‐terminal BICE is a multiwavelength semiconductor light emitter in which the emission wavelength is determined by an applied voltage, while the emission intensity is modulated by an applied current (no optical pumping employed). Device operation is based on the bias dependent injection and collection of electrons and holes in quantum wells. In this letter, three‐terminal dual wavelength BICE functionality is demonstrated. The device exhibits coaxial optical output, a large separation of emitted wavelengths (≊570 Å), low operational voltages and currents, and high emission contrast ratios of 159:1 and 1:76 at 77 K.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.-q Optoelectronic devices
78.66.Fd III-V semiconductors
85.60.Jb Light-emitting devices

Low temperature growth of highly doped GaAs:Si by atomic layer molecular beam epitaxy

J. P. Silveira and F. Briones

Appl. Phys. Lett. 65, 573 (1994); http://dx.doi.org/10.1063/1.112299 (2 pages) | Cited 8 times

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Two‐dimensional growth kinetics characteristic of atomic layer molecular beam epitaxy (ALMBE) allows to extend the range of GaAs growth conditions to low temperatures while preserving excellent crystallinity and layer morphology. In this work we have used ALMBE technique to obtain GaAs layers highly doped with silicon at substrate temperatures from 200 to 400 °C. At these low growth temperatures donor incorporation is excellent and electron densities of 2×1019 cm−3 were reached, limited by the pinning of Fermi level at the DX level. Samples exhibit persistent photoconductivity due to the existence of a DX level resonant with the conduction band.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Pz Photoconduction and photovoltaic effects

Influence of barrier height distribution on the parameters of Schottky diodes

Edmund Dobročka and Jozef Osvald

Appl. Phys. Lett. 65, 575 (1994); http://dx.doi.org/10.1063/1.112300 (3 pages) | Cited 69 times

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I‐V curves of Schottky diodes are simulated for a Gaussian type of the Schottky barrier height (SBH) distribution using the model of noninteracting parallel diodes. The mean value and the standard deviation of the distribution are supposed to be constant, i.e., not dependent on the voltage and the temperature. The influence of the distribution parameters and the temperature on the apparent barrier height and the ideality factor is analyzed. It is shown that the ideality factor increases and the apparent barrier height decreases with increasing standard deviation and decreasing temperature. The simulation also provides a rough estimate for the standard deviation. Values of ∼0.09 V can result in ideality factors up to 1.2. The importance of the effect of series resistance in the approach of noninteracting diodes is emphasized.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ei Rectification
85.30.De Semiconductor-device characterization, design, and modeling

Electrical deactivation of arsenic as a source of point defects

P. M. Rousseau, P. B. Griffin, and J. D. Plummer

Appl. Phys. Lett. 65, 578 (1994); http://dx.doi.org/10.1063/1.112301 (3 pages) | Cited 38 times

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The effect of electrical deactivation of arsenic in silicon has been studied. High concentrations of arsenic were implanted and laser melt annealed, creating boxlike fully electrically active arsenic layers, with no residual implant damage. Wafers were then subjected to low temperature thermal cycles while a buried boron layer monitored point defects. Strong enhancements in the boron diffusion were observed suggesting that arsenic deactivation releases large numbers of interstitials. This is explained by a process where the vacancies required by the deactivated arsenic structures are created through a deactivation assisted Frenkel pair generation process, thus injecting interstitials.
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61.72.J- Point defects and defect clusters
61.72.uf Ge and Si

Deep levels in 6H‐SiC wafers and step‐controlled epitaxial layers

Seongjoo Jang, Tsunenobu Kimoto, and Hiroyuki Matsunami

Appl. Phys. Lett. 65, 581 (1994); http://dx.doi.org/10.1063/1.112302 (3 pages) | Cited 7 times

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We have investigated deep levels in 6H‐SiC wafers grown by a modified Lely method and step‐controlled epitaxial layers by transient capacitance methods. Several deep electron traps, of which concentrations were on the order of 1015 cm−3, located at 0.39–0.69 eV below the conduction band edge were observed in the 6H‐SiC wafers. However, the epitaxial layers by step‐controlled epitaxy had very few traps of which concentrations were below the detection limit (<1013 cm−3).
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71.55.Ht Other nonmetals
73.61.Le Other inorganic semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Electroluminescence from Er‐doped GaP

X. Z. Wang and B. W. Wessels

Appl. Phys. Lett. 65, 584 (1994); http://dx.doi.org/10.1063/1.112985 (3 pages) | Cited 18 times

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The electroluminescent properties of the Er‐doped GaP light‐emitting diodes prepared by metalorganic vapor phase epitaxy and diffusion were investigated. Strong characteristic Er3+ intra‐4f‐shell emission at 0.80 eV is observed over the temperature range of 12–300 K. The electroluminescence intensity is only weakly temperature dependent, decreasing less than 40% as the temperature increases from 20 to 300 K.  
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78.60.Fi Electroluminescence
71.35.-y Excitons and related phenomena
71.55.Eq III-V semiconductors

Growth and characterization of GaInP unicompositional disorder‐order‐disorder quantum wells

R. P. Schneider, E. D. Jones, and D. M. Follstaedt

Appl. Phys. Lett. 65, 587 (1994); http://dx.doi.org/10.1063/1.112307 (3 pages) | Cited 33 times

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Metalorganic vapor phase epitaxy (MOVPE) is used to grow unicompositional quantum‐well (QW) structures, in which the QW and barrier layers are composed of ordered and disordered GaInP, respectively. Transmission electron dark‐field micrographs reveal abrupt interfaces between highly ordered QWs and disordered barriers, with no evidence of defect formation. Low‐temperature photoluminescence from the structures exhibits relatively broad emission peaks, with emission energy increasing with decreasing QW thickness. The dependence of emission energy on well thickness can be described by a finite square well model only when a type‐II band alignment is taken for the heterostructure, in which the conduction band edge of the ordered GaInP QW lies about 135–150 meV below that of the disordered barrier material. These results demonstrate a high degree of control over the ordering process in MOVPE, such that quantum size effects can be realized solely through disorder‐order phenomena. Further, the data provide strong support for a type‐II (spatially indirect) recombination transition between ordered and disordered GaInP.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
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