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15 Aug 1994

Volume 65, Issue 7, pp. 795-923

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Asymmetric dual GeSi/Si Bragg mirror and photodetector operating at 632 and 780 nm

S. S. Murtaza, J. C. Campbell, J. C. Bean, and L. J. Peticolas

Appl. Phys. Lett. 65, 795 (1994); http://dx.doi.org/10.1063/1.112232 (3 pages) | Cited 4 times

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We report the successful combination of asymmetric and dual mirror designs to fabricate a strained‐layer GeSi/Si Bragg mirror with twin peaks at 632 and 780 nm. The absorption in the GeSi/Si mirror is found to be small and is compensated by the increased refractive index step available at shorter wavelengths. We also propose a dual photodetector that will exhibit high efficiencies at both the resonant wavelengths. The small absorption thickness of this photodetector as compared to conventional silicon photodiodes is expected to result in higher speeds.
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42.79.Bh Lenses, prisms and mirrors
85.60.Gz Photodetectors (including infrared and CCD detectors)
78.66.Li Other semiconductors

Vertically tapered InGaAsP/InP waveguides for highly efficient coupling to flat‐end single‐mode fibers

T. Brenner, M. Bachmann, and H. Melchior

Appl. Phys. Lett. 65, 798 (1994); http://dx.doi.org/10.1063/1.112233 (3 pages) | Cited 13 times

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We report on InGaAsP/InP optical waveguide tapers for efficient coupling to flat‐end single‐mode fibers. These integrated tapers are realized by an optoelectronic integrated circuit compatible diffusion limited etch process for the vertically tapered core layer and a selective area regrowth for the upper cladding. The smoothly etched vertical tapers and the excellent quality of the regrown layers show low scattering and radiation losses. Polarization insensitive fiber to waveguide coupling losses are below 1 dB and relaxed alignment tolerances are ±2.5 μm in the horizontal and vertical, and 28 μm in longitudinal directions for 1 dB in addition.
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42.79.Gn Optical waveguides and couplers
42.81.Qb Fiber waveguides, couplers, and arrays

〈100〉 dark line defect in II‐VI blue‐green light emitters

S. Guha, H. Cheng, M. A. Haase, J. M. DePuydt, J. Qiu, B. J. Wu, and G. E. Hofler

Appl. Phys. Lett. 65, 801 (1994); http://dx.doi.org/10.1063/1.112234 (3 pages) | Cited 41 times

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We have carried out a microstructural study of the 〈100〉 dark line defect that forms during degradation of II‐VI blue‐green light emitters. We find that these defects lie in or near the ZnCdSe quantum well and do not correspond to a readily observable dislocation network in transmission electron microscopy studies. We speculate that they may consist of point defects or small point defect complexes. We have also carried out estimates of point defect migration rates during device operation that can give rise to such degradation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
61.72.J- Point defects and defect clusters

Seeding of a titanium sapphire oscillator by a vertical‐cavity surface‐emitting laser in the nanosecond range

Y. Boucher, P. Georges, A. Brun, J.‐P. Pocholle, and M. Papuchon

Appl. Phys. Lett. 65, 804 (1994); http://dx.doi.org/10.1063/1.112237 (3 pages) | Cited 1 time

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A GaAs/AlGaAs vertical‐cavity surface‐emitting laser was used to seed a titanium‐sapphire laser oscillator. Both lasers were pumped synchronously by the same frequency‐doubled Nd:YAG laser in the nanosecond range. Even at low injection level, we obtained a strong narrowing of the emission spectrum of the oscillator (from 30 to 1 nm), as well as its tunability over a broad range of wavelengths (from 775 to 805 nm).
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Multilayered organic electroluminescent device using a novel starburst molecule, 4,4′,4″‐tris(3‐methylphenylphenylamino)triphenylamine, as a hole transport material

Yasuhiko Shirota, Yoshiyuki Kuwabara, Hiroshi Inada, Takeo Wakimoto, Hitoshi Nakada, Yoshinobu Yonemoto, Shin Kawami, and Kunio Imai

Appl. Phys. Lett. 65, 807 (1994); http://dx.doi.org/10.1063/1.112238 (3 pages) | Cited 263 times

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A novel π‐conjugated starburst molecule, 4,4′,4″‐tris(3‐methylphenylphenylamino)triphenylamine (m‐MTDATA), which forms a stable amorphous glass, functions as an excellent hole transport material for organic electroluminescent devices. An electroluminescent device consisting of double hole transport layers of m‐MTDATA and 4,4′‐bis(3‐methylphenylphenylamino)biphenyl and an emitting layer of tris(8‐quinolinolato)aluminum exhibits a high luminance efficiency and significant durability.  
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices

High‐power diode‐laser‐pumped midwave infrared HgCdTe/CdZnTe quantum‐well lasers

H. Q. Le, J. M. Arias, M. Zandian, R. Zucca, and Y.‐Z. Liu

Appl. Phys. Lett. 65, 810 (1994); http://dx.doi.org/10.1063/1.112239 (3 pages) | Cited 8 times

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Diode‐array‐pumped HgCdTe/CdZnTe broad‐stripe quantum‐well lasers operated at 88 K yielded 1.3 W peak power and 10 mW average power per facet at 3.2 μm. The highest operation temperature was 154 K, and the characteristic temperature of the threshold was 16 K. The external quantum efficiency was ∼7.5% at ∼80 K and decreased by an order of magnitude at 150 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Vacuum ultraviolet and ultraviolet fluorescence and absorption studies of Er3+‐doped LiLuF4 single crystals

E. Sarantopoulou, Z. Kollia, A. C. Cefalas, M. A. Dubinskii, C. A. Nicolaides, R. Yu. Abdulsabirov, S. L. Korableva, A. K. Naumov, and V. V. Semashko

Appl. Phys. Lett. 65, 813 (1994); http://dx.doi.org/10.1063/1.113015 (3 pages) | Cited 12 times

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The laser induced fluorescence spectrum of LiLuF4:Er3+ single crystals, pumped by an F2 pulsed discharge molecular laser at 157 nm, was obtained in the vacuum ultraviolet (VUV) and ultraviolet (UV) regions of the spectrum at room temperature. A number of new fluorescence peaks were observed for the first time. They were assigned to the dielectric dipole allowed transitions 4f105d→4f11 of the Er3+ ion. In addition, the absorption spectrum of the same crystal samples was recorded. The positions of the bands within the 4f105d configuration were located at 65 098, 69 198, 71 422, 74 343, and 76 916 cm−1. The edge of the 4f105d bands was at 63 046 cm−1.
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42.70.Hj Laser materials
78.40.-q Absorption and reflection spectra: visible and ultraviolet
78.55.Hx Other solid inorganic materials

Electron‐temperature control for plasmas passing through a negatively biased grid

Kohgi Kato, Satoru Iizuka, and Noriyoshi Sato

Appl. Phys. Lett. 65, 816 (1994); http://dx.doi.org/10.1063/1.112240 (3 pages) | Cited 39 times

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Electron‐temperature control is performed on plasmas passing through a coarse mesh grid from a discharge region. By increasing a negative potential applied to the grid, the electron temperature is continuously decreased in a very wide range covering almost two orders of magnitude down to the value nearly equal to the background gas temperature in case of direct current argon or helium gas discharge. The temperature decrease is accompanied by an increase in the electron density. This method of electron‐temperature control can also be applied to plasmas produced by radio‐frequency and electron cyclotron resonance discharges.
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52.50.-b Plasma production and heating
52.80.-s Electric discharges
52.20.-j Elementary processes in plasmas

Electric field measurements in discharges by 2+1 photon laser Stark spectroscopy of atomic hydrogen

J. P. Booth, M. Fadlallah, J. Derouard, and N. Sadeghi

Appl. Phys. Lett. 65, 819 (1994); http://dx.doi.org/10.1063/1.112241 (3 pages) | Cited 27 times

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We have developed a new method for measuring electric field magnitude using 2+1 photon laser‐induced fluorescence of ground‐state hydrogen atoms. The atoms are excited to the n=2 level by two 243‐nm photons, then further excited to the n=6 level by one photon at 410 nm and detected by cascaded Hα fluorescence. The electric field magnitude is deduced from the Stark splitting of the n=6 level. The method was calibrated using H atoms from a distant source flowing through a region of known electric field. Results are presented for field profiles in dc discharges in 0.3 and 1 Torr pure H2.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.80.Hc Glow; corona
07.50.-e Electrical and electronic instruments and components

Conversion of fullerenes to diamond under high pressure and high temperature

Yanzhang Ma, Guangtian Zou, Haibin Yang, and Jinfang Meng

Appl. Phys. Lett. 65, 822 (1994); http://dx.doi.org/10.1063/1.112242 (2 pages) | Cited 9 times

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Fullerenes have been converted to diamond crystals with the size of 0.1 mm at 5.0–5.5 GPa and 1400 °C, using NiMnCo catalyst. They are similar to graphite in the growing phenomena. They are transformed into diamond directly without being graphitized first.
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61.46.-w Structure of nanoscale materials
64.70.K- Solid-solid transitions
62.50.-p High-pressure effects in solids and liquids

Simulations of crystal growth: Effects of atomic beam energy

George H. Gilmer and Christopher Roland

Appl. Phys. Lett. 65, 824 (1994); http://dx.doi.org/10.1063/1.112243 (3 pages) | Cited 36 times

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We have simulated silicon molecular beam epitaxy on (100) and (111) substrates using molecular dynamics methods. We find that the kinetic energy of the atomic beam has a dramatic effect on the crystalline ordering in the deposit. Energetic beams form a crystalline film at less than half the absolute temperature required for a thermal beam. Our simulations show that crystallization is facilitated by the transient atomic motion just after the impact of an atom from the beam.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Submicrometer fluorescence microprobe based on Bragg‐Fresnel optics

S. M. Kuznetsov, I. I. Snigireva, A. A. Snigirev, P. Engström, and C. Riekel

Appl. Phys. Lett. 65, 827 (1994); http://dx.doi.org/10.1063/1.112244 (3 pages) | Cited 10 times

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An x‐ray fluorescence microprobe with linear Bragg‐Fresnel lens was tested at the European Synchrotron Radiation Facility Microfocus beamline. A focal line with a width of 0.8 μm was observed using the knife‐edge technique at a wavelength of 0.85 Å (14.6 eV). Wiener filtering with the Fast Fourier Transformation was applied to solve a convolution equation to evaluate the size of the probe from fluorescence data.
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07.85.-m X- and γ-ray instruments
78.70.En X-ray emission spectra and fluorescence
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
42.79.-e Optical elements, devices, and systems

Study of density in pulsed‐laser deposited amorphous carbon films using x‐ray reflectivity

Y. Huai, M. Chaker, J. N. Broughton, E. Gat, H. Pépin, T. Gu, X. Bian, and M. Sutton

Appl. Phys. Lett. 65, 830 (1994); http://dx.doi.org/10.1063/1.112245 (3 pages) | Cited 23 times

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We report the accurate determination of the absolute density of the pulsed‐laser deposited amorphous carbon ultrathin films as well as the film density evolution with the substrate temperatures Ts (22–300 °C) using high‐resolution x‐ray reflectivity. The density values ρ for the films deposited with laser power density of 8×108 W/cm2 varied from 3.10 to 2.40 g/cm3 as the substrate temperature increased from 22 to 300 °C. This result, together with the optical band‐gap values obtained by transmittance measurements, clearly indicates a diamond‐like to graphite‐like microstructure change near Ts=200 °C.
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61.43.Dq Amorphous semiconductors, metals, and alloys
81.15.Fg Pulsed laser ablation deposition
78.70.Ck X-ray scattering

On the bamboo structure as the salvation of thin film metallization for deep submicron device technologies

Kuan‐Yu Fu

Appl. Phys. Lett. 65, 833 (1994); http://dx.doi.org/10.1063/1.112198 (3 pages) | Cited 1 time

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The recently proposed Dreyer‐Fu‐Varker (DFV) model [J. Appl. Phys. 73, 4894 (1993) and 1993 Int. Rel. Phys. Proc. 304 (1993)] for predicting electromigration lifetime has been extended to include the shape factor (normally referred to as the standard deviation). An experiment has been conducted to verify the validity of this extension. Excellent agreement between the model prediction and the experimental data has been obtained. It is found that a significant portion of the increase in the shape factor with the decrease in line width can be attributed to the increase in the temperature standard deviation for narrower lines. Based on this newly expanded DFV model coupled with the experimental observations it is shown that the maximum allowable current density, for meeting the reliability specification of electromigration, suffers a steep drop with line width in the deep submicron region. As a result, the bamboo structure cannot salvage thin film metallization from electromigration susceptibility for deep submicron microchip technologies.
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66.30.Qa Electromigration
61.72.Mm Grain and twin boundaries
85.40.Ls Metallization, contacts, interconnects; device isolation

AlxGa1−xAs/GaAs quantum well structures grown by metalorganic molecular beam epitaxy using dimethylethylamine alane

B. Courboulès, C. Deparis, J. Massies, M. Leroux, and C. Grattepain

Appl. Phys. Lett. 65, 836 (1994); http://dx.doi.org/10.1063/1.112199 (3 pages) | Cited 2 times

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Dimethylethylamine alane (DMEAA) has been used as an Al precursor for the growth of AlGaAs alloys and AlGaAs/GaAs quantum wells by metalorganic molecular beam epitaxy (MOMBE). It is shown that DMEAA is a very convenient source in terms of in situ calibration of growth rates and alloy composition by reflection high‐energy electron diffraction. As indicated by secondary ion mass spectroscopy, low residual O and C impurity content is obtained by using this source. GaAs quantum well structures have been characterized by photoluminescence spectroscopy and compared to equivalent structures grown by standard solid‐source molecular beam epitaxy. They are also compared with the results recently reported in the literature for analogous structures grown by MOMBE using alternate aluminum sources.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures

D. J. Dunstan, P. Kidd, P. F. Fewster, N. L. Andrew, R. Grey, J. P. R. David, L. González, Y. González, A. Sacedón, and F. González‐Sanz

Appl. Phys. Lett. 65, 839 (1994); http://dx.doi.org/10.1063/1.112177 (3 pages) | Cited 9 times

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The plastic relaxation of multilayer structures of strained InGaAs grown above critical thickness on GaAs is reported and compared with the relaxation of single layers and with theory. We show that a composite structure, taken as a whole, follows the same relaxation law as observed in single layers. However, departures of the strains of some component layers from theory show that misfit dislocations are easily pinned at an interface. Implications for the design of relaxed buffer layer growth are discussed.
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68.55.-a Thin film structure and morphology
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Slow conductance oscillations in nanoscale silicon clusters of quantum dots

Raphael Tsu, Xiao‐Lei Li, and Edward H. Nicollian

Appl. Phys. Lett. 65, 842 (1994); http://dx.doi.org/10.1063/1.112178 (3 pages) | Cited 9 times

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At fixed reverse bias voltages of a diode structure consisting of nanoscale silicon particles embedded in an amorphous SiO2 matrix, conductance oscillation in time is observed on some samples at room temperature. Possible mechanisms of the conductance oscillations include the exchange of electrons between the quantum confined states coupled to localized defects and the charge state of these defects. The precise origin of the observed oscillations has not been identified.
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73.20.-r Electron states at surfaces and interfaces
73.40.-c Electronic transport in interface structures

Effect of free carriers on the luminescence efficiency of InP:Er

X. Z. Wang and B. W. Wessels

Appl. Phys. Lett. 65, 845 (1994); http://dx.doi.org/10.1063/1.112179 (3 pages) | Cited 3 times

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A systematic study of the effect of free carriers on the luminescence efficiency of Er‐doped InP is reported. As free carrier concentration increases from 1013 to 1017 cm−3, an increase in the Er3+‐related emission intensity is observed. This increase is attributed to the enhanced probability of formation of bound excitons at the rare earth centers. For carrier concentrations of greater than 3×1017 up to 1020 cm−3, the luminescence intensity is only weakly quenched. Free carrier Auger processes play a limited role in determining the Er3+ luminescence efficiency.
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78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness

M. L. Green, D. Brasen, K. W. Evans‐Lutterodt, L. C. Feldman, K. Krisch, W. Lennard, H.‐T. Tang, L. Manchanda, and M.‐T. Tang

Appl. Phys. Lett. 65, 848 (1994); http://dx.doi.org/10.1063/1.112980 (3 pages) | Cited 82 times

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Oxynitrides can suppress the diffusion of boron from the polycrystalline silicon gate electrode to the channel region of an ultralarge scale integrated device, and are therefore important potential substrates for thin SiO2 gates. Direct oxynitridation of Si in N2O is a simple and manufacturable N incorporation scheme. We have used rapid thermal oxidation to grow O2‐ and N2O‐oxides of technological importance (∼10 nm thick) in the temperature range 800–1200 °C. Accurate measurements of the N content of the N2O‐oxides were made using nuclear reaction analysis. N content increases linearly with oxidation temperature, but is in general small. A 1000 °C N2O‐oxide contains about 7×1014 N/cm2, or the equivalent of about one monolayer of N on Si (100). Nonetheless, this small amount of N can retard boron penetration through the dielectric by two orders of magnitude as compared to O2‐oxides. The N is contained in a Si‐O‐N phase within about 1.5 nm of the Si/SiO2 interface, and can be pushed away from the interface by O2‐reoxidation. We have measured Si/SiO2 interfacial roughness by x‐ray reflectometry, and found that it decreases with increasing oxidation temperature for both O2‐ and N2O‐oxides, although the N2O‐oxides are smoother. The enhanced smoothness of N2O‐oxides is greater the greater the N content. N2O‐oxides are promising candidates for thin ultralarge scale integrated circuit gate dielectrics.
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81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer

Independent contacting to electron layers in a double quantum well system using Pd‐Ge shallow ohmic contacts

N. K. Patel, J. H. Burroughes, M. J. Tribble, E. H. Linfield, A. C. Churchill, D. A. Ritchie, and G. A. C. Jones

Appl. Phys. Lett. 65, 851 (1994); http://dx.doi.org/10.1063/1.112180 (3 pages) | Cited 13 times

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A novel recess technique is used to produce reliable Pd‐Ge ohmic contacts to GaAs/AlGaAs high mobility two‐dimensional electron gas (2DEG) systems, operating down to cryogenic temperatures. By altering the depth of the recess the diffusion length of the contacts is found to be less than 20 nm. Pd‐Ge shallow ohmic contacts were also used for forming independent contacts to two 2DEGs in a double quantum well structure where the 2DEGs are separated by only a 20 nm AlxGa1−xAs(x=0.3) barrier. Tunnel current measurements and magnetoresistance analysis confirmed that the layers could be probed individually and that the carrier densities and mobilities of the separate layers could be accurately determined.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Cg Contact resistance, contact potential

Short‐wavelength room‐temperature continuous‐wave laser operation of InAlP‐InGaP superlattices grown by metalorganic chemical vapor deposition

R. V. Chelakara, M. R. Islam, J. G. Neff, K. G. Fertitta, A. L. Holmes, F. J. Ciuba, R. D. Dupuis, T. A. Richard, N. Holonyak, and K. C. Hsieh

Appl. Phys. Lett. 65, 854 (1994); http://dx.doi.org/10.1063/1.112181 (3 pages)

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The growth and laser operation of high‐quality InAlP‐InGaP superlattice‐active‐region quantum‐well heterostructure lasers on GaAs substrates are reported. These heterostructures exhibit cw room‐temperature (300 K) optically pumped laser operation at wavelengths as short as λ∼586 nm (yellow, Ehν∼2.11 eV). This is the shortest wavelength room‐temperature cw laser operation reported to date for any III‐V material system.
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42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors

InGaAs/InP quantum wells with thickness modulation

M. J. S. P. Brasil, A. A. Bernussi, M. A. Cotta, M. V. Marquezini, J. A. Brum, R. A. Hamm, S. N. G. Chu, L. R. Harriott, and H. Temkin

Appl. Phys. Lett. 65, 857 (1994); http://dx.doi.org/10.1063/1.112182 (3 pages) | Cited 7 times

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We investigated the optical properties of lattice‐matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy on top of patterned InP buffer layers with elongated features along the [011] direction. The resulting quantum wells present a periodic thickness variation following the elongated features. Low temperature luminescence measurements exhibit double emission bands, attributed to distinct regions of the well. Temperature evolution of the photoluminescence spectra gives qualitative information about the effect of exciton localization.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Complete microcrystalline p‐i‐n solar cell—Crystalline or amorphous cell behavior?

J. Meier, R. Flückiger, H. Keppner, and A. Shah

Appl. Phys. Lett. 65, 860 (1994); http://dx.doi.org/10.1063/1.112183 (3 pages) | Cited 220 times

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Complete μc‐Si:H p‐i‐n solar cells have been prepared by the very high frequency glow discharge method. Up to now, intrinsic μc‐Si:H has never attracted much attention as a photovoltaic active material. However, an efficiency of 4.6% and remarkably high short circuit current densities of up to 21.9 mA/cm2 due to an enhanced absorption in the near‐infrared could be obtained. First light‐soaking experiments indicate no degradation for the entirely μc‐Si:H cells. Voltage‐dependent spectral response measurements suggest that the carrier transport in complete μc‐Si:H p‐i‐n cells may possibly be cosupported by diffusion (in addition to drift).
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73.50.Pz Photoconduction and photovoltaic effects
78.66.Jg Amorphous semiconductors; glasses
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
84.60.Jt Photoelectric conversion

Electron emission from chemical vapor deposited diamond and dielectric breakdown

Joseph D. Shovlin and Martin E. Kordesch

Appl. Phys. Lett. 65, 863 (1994); http://dx.doi.org/10.1063/1.112184 (3 pages) | Cited 36 times

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After coating with a smooth, nonreactive, sputtered gold layer, previously nonemitting chemical vapor deposited diamond films are observed to emit electrons in an applied field of 30–50 kV/cm in an electron emission microscope. The gold overlayer increases the effective field strength applied to the film. The consequent dielectric breakdown of the film provides conductive channels for the observed electron emission.
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79.70.+q Field emission, ionization, evaporation, and desorption
77.55.-g Dielectric thin films
77.22.Jp Dielectric breakdown and space-charge effects
72.20.Ht High-field and nonlinear effects

Low‐temperature homoepitaxial growth on Si(111) mediated by thin overlayers of Au

G. D. Wilk, R. E. Martinez, John F. Chervinsky, Frans Spaepen, and J. A. Golovchenko

Appl. Phys. Lett. 65, 866 (1994); http://dx.doi.org/10.1063/1.112185 (3 pages) | Cited 13 times

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High quality homoepitaxial growth of Si on Si(111) through an overlayer of Au is shown to occur at 450–500 °C, far below the temperature required for growth of Si of similar quality on bare Si(111). Films of unlimited thickness can be obtained with excellent crystalline quality, as revealed by Rutherford backscattering spectrometry ion channeling measurements (χmin=2.2%). A distinct range of Au coverage (0.4–1.0 monolayer) results in the best quality epitaxy, with no measurable amount of Au trapped at either the interface or within the grown films. Cross‐sectional transmission electron microscopy reveals that in films grown with Au coverages below and above the optimum range, the predominant defects are twins on (111) planes and Au inclusions, respectively.
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68.55.-a Thin film structure and morphology
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