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22 Aug 1994

Volume 65, Issue 8, pp. 929-1059

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Traveling wave electro‐optic phase modulator using cross‐linked nonlinear optical polymer

Wenshen Wang, Datong Chen, Harold R. Fetterman, Yongqiang Shi, William H. Steier, and Larry R. Dalton

Appl. Phys. Lett. 65, 929 (1994); http://dx.doi.org/10.1063/1.112152 (3 pages) | Cited 21 times

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We report the fabrication and characterization of a high frequency traveling wave electro‐optic phase modulator made from thermally cross‐linked polyurethane‐Disperse Red 19 polymers. The device has been fabricated using a three layer structure with an integrated 50 Ω microstrip line circuit. The straight channel optical waveguides were defined laterally by standard photolithography and oxygen reactive ion etching. The measured half‐wave voltage was in good agreement with that extrapolated from the second harmonic generation measurements. Optical modulation was observed directly on a spectrum analyzer up to 18 GHz. Long‐term evaluation over an extensive length of time found no observable loss of performance.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays

Detection of ultrasonic motion of a scattering surface by two‐wave mixing in a photorefractive GaAs crystal

Alain Blouin and Jean‐Pierre Monchalin

Appl. Phys. Lett. 65, 932 (1994); http://dx.doi.org/10.1063/1.112153 (3 pages) | Cited 33 times

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The performance of an interferometric system based on two‐wave mixing at 1.06 μm in undoped GaAs crystal, for the remote detection of transient motion of a scattering surface, is described. In this system, the wave scattered by the surface is mixed inside the photorefractive crystal with a pump wave directly derived from the laser to provide the reference wave of the interferometer. The system shows several features appropriate to industrial applications, although its sensitivity is less than passive interferometric systems of the confocal Fabry–Perot type presently in use, except in the low frequency range (below 1 MHz).
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07.60.Ly Interferometers
43.35.Yb Ultrasonic instrumentation and measurement techniques
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Spatio‐temporal measurement of excited Xe(1s4) atoms in a discharge cell of a plasma display panel by laser spectroscopic microscopy

Kunihide Tachibana, Naoki Kosugi, and Tetsuo Sakai

Appl. Phys. Lett. 65, 935 (1994); http://dx.doi.org/10.1063/1.112154 (3 pages) | Cited 39 times

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Dynamic behavior of excited Xe atoms in the 1s4 state was measured in a micro‐discharge cell of a color plasma display panel by a laser absorption technique combined with an optical microscope. The maximum absorption in a pulsed discharge with a peak current of 160 μA amounted 6% in one pass of the laser beam through the panel of 200‐μm gap. This gives the path averaged density of 6.7×1012 cm−3. Measured spatio‐temporal characteristics of the excited atoms are discussed in a comparison with a one‐dimensional simulation by a fluid model.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.80.Hc Glow; corona
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Second‐harmonic generation in a waveguide with domain‐inverted regions like periodic lens sequence on z‐face KTiOPO4 crystal

Yukihiro Yamamoto, Satoshi Yamaguchi, Kazuo Suzuki, and Noriko Yamada

Appl. Phys. Lett. 65, 938 (1994); http://dx.doi.org/10.1063/1.112979 (3 pages) | Cited 4 times

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A domain‐inverted waveguide with refractive‐index distribution of a periodic lens sequence instead of a conventional square shape was fabricated in a z‐cut KTiOPO4 (KTP) crystal. In the periodic lens sequence waveguide, the propagated laser beam through the waveguide was collimated and focused into a spot with a minimum amount of dispersion. The reason for the phenomenon of this periodic lens sequence waveguide structure can be explained from the viewpoint of ray matrix approximation.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers

Subpicosecond time response of third‐order optical nonlinearity of small copper particles in glass

Takashi Tokizaki, Arao Nakamura, Shoji Kaneko, Katsuaki Uchida, Shigeyuki Omi, Hiroaki Tanji, and Yoshiyuki Asahara

Appl. Phys. Lett. 65, 941 (1994); http://dx.doi.org/10.1063/1.112155 (3 pages) | Cited 85 times

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Femtosecond pump‐probe experiments with a time resolution of 100 fs have been performed for copper particles with a radius of 4 nm. Differential absorption spectra for a pump centered at 2.05 eV indicates the broadening of the absorption band due to the surface plasmon. The nonlinear response time derived from the recovery time of the nonlinear absorption is dependent on the pumping laser fluences, and is as short as 0.7 ps for 210 μJ/cm2. The relaxation dynamics of nonequilibrium electrons can be described by the usual electron‐phonon coupling model.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics

Terahertz four‐wave mixing in semiconductor optical amplifiers: Experiment and theory

A. Uskov, J. Mørk, J. Mark, M. C. Tatham, and G. Sherlock

Appl. Phys. Lett. 65, 944 (1994); http://dx.doi.org/10.1063/1.112156 (3 pages) | Cited 29 times

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Highly nondegenerate four‐wave mixing processes in bulk semiconductor optical amplifiers are analyzed by comparing experimental data at detuning frequencies up to 3 THz with numerical calculations based on semiclassical density‐matrix equations. Carrier heating and spectral holeburning are found to be dominant in mediating wave mixing in the THz region and lead to comparable contributions to nonlinear gain suppression in semiconductor lasers.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.47.-p Spectroscopy of solid state dynamics
42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Near field measurements of optical channel waveguides and directional couplers

Ahn Goo Choo, Howard E. Jackson, Udo Thiel, Gregory N. De Brabander, and Joseph T. Boyd

Appl. Phys. Lett. 65, 947 (1994); http://dx.doi.org/10.1063/1.112157 (3 pages) | Cited 43 times

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Near field microscopy is used to investigate the guided mode intensity distribution of optical channel waveguides and directional couplers with subwavelength spatial resolution. The directional coupler consisted of two single mode optical ridge channel waveguides formed with silicon nitride deposited on a lower cladding layer of SiO2 on a silicon substrate. A near field measurement of the guided mode intensity profile in the transverse direction parallel to the waveguide surface was performed across one of the optical channel waveguides. These variations are compared with model calculations. Similar transverse measurements of light propagating through a directional coupler were performed at many locations along the coupler, providing a view of the evolution of optical power transfer.
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42.79.Gn Optical waveguides and couplers
42.81.Qb Fiber waveguides, couplers, and arrays
07.60.Pb Conventional optical microscopes

Effects of extra low‐frequency noise injection on microwave signals generated by a gain‐switched semiconductor laser

C. R. Lima and P. A. Davies

Appl. Phys. Lett. 65, 950 (1994); http://dx.doi.org/10.1063/1.112158 (3 pages) | Cited 4 times

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Low‐frequency upconverted noise (1/f laser intensity noise and the low‐frequency noise of the driver source) has been identified as the dominant noise generation mechanism in microwave signals generated by a Fabry–Perot gain‐switched semiconductor laser. An experimental investigation is carried out using extra low‐frequency noise injection added to the drive signal. Results show the dependence of the broadband intensity noise level, formed by the overlapping of the upconverted noise sidebands present at each harmonic, on gain‐switching input parameters.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Mi Dynamical laser instabilities; noisy laser behavior

Transient behavior and memory effect of a PbZrxTi1−xO3/YBa2Cu3O7−x three‐terminal device

H. Lin, N. J. Wu, K. Xie, X. Y. Li, and A. Ignatiev

Appl. Phys. Lett. 65, 953 (1994); http://dx.doi.org/10.1063/1.112159 (3 pages) | Cited 24 times

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The transient behavior of a ferroelectric PbZrxTi1−xO3 and superconducting YBa2Cu3O7−x three‐terminal device has been investigated. Four‐state behavior, that is, two polarization states of the PbZrxTi1−xO3 gate and superconducting and normal states of the YBa2Cu3O7−x layer, has been observed. It was shown that the biased superconducting channel can be switched from superconducting state to the normal state by the flowing charge during the polarization switching of the PbZrxTi1−xO3 gate. The nonvolatility of this device based on the different polarization states of the ferroelectric gate has also been demonstrated.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
85.30.Tv Field effect devices

High‐resolution spatial light modulators using GaAs/AlGaAs multiple quantum wells

S. R. Bowman, W. S. Rabinovich, C. S. Kyono, D. S. Katzer, and K. Ikossi‐Anastasiou

Appl. Phys. Lett. 65, 956 (1994); http://dx.doi.org/10.1063/1.112160 (3 pages) | Cited 21 times

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We report improved performance in semi‐insulating GaAs/AlGaAs quantum well based spatial light modulators grown by molecular beam epitaxy. The optically addressed modulator reported here are of a new design and have significantly higher spatial resolution than previously reported devices. Strong diffraction efficiencies are described for spatial periods as fine as 2.6 μm at framing rate as high as 600 kHz. Two modulators are characterized, one with x=0.1 and the other with x=0.3 for the AlxGa1−xAs quantum barriers of the superlattices.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Interferometric detection of cross‐phase modulation in CdS

C. Hirlimann, E. Wassmuth, E. Kling, S. Petit, and M. Pereira dos Santos

Appl. Phys. Lett. 65, 959 (1994); http://dx.doi.org/10.1063/1.112161 (3 pages) | Cited 4 times

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Using short 130 fs light pulses in a pump‐probe experiment we measured the transmission change under a strong irradiation (≊5 GW/cm2) of a Fabry–Perot‐like CdS sample, at room temperature, Using a simple model we deduced a nonlinear index n2=5×10−13 cm2/W. This index is only due to the electric field effect of the pulse for it is measured in a time shorter than the electronic relaxation time. We show that this experimental method could be used for measuring the duration of ultrashort light pulses at their fundamental frequency with intensities less than a few GW/cm2.  
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics

Low‐energy separation by implantation of oxygen structures via plasma source ion implantation

L. Zhang, J. L. Shohet, D. Dallmann, J. H. Booske, R. R. Speth, K. Shenai, M. J. Goeckner, J. B. Kruger, P. Rissman, J. E. Turner, E. Perez‐Albuerne, S. Lee, and N. Meyyappan

Appl. Phys. Lett. 65, 962 (1994); http://dx.doi.org/10.1063/1.112162 (3 pages) | Cited 4 times

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The initial results from an investigation into the feasibility of using plasma source ion implantation (PSII) to produce separation by implantation of oxygen structures in silicon are reported. Oxygen ions are implanted into p‐type (111) oriented silicon wafers using a −30 kV acceleration potential and an oxygen plasma at a pressure of 0.2 mTorr. The effects of ion dose and high‐voltage pulse width were examined. Some of the implanted wafers were annealed. Both the as‐implanted and annealed wafers were examined using secondary‐ion‐mass spectroscopy and Auger electron spectroscopy. The initial results show that oxygen can be implanted by PSII and suggest that a buried layer of silicon dioxide has been formed in the implanted wafers.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects

Stress relaxation in plasma deposited tungsten nitride/tungsten bilayer

Chang Woo Lee and Yong Tae Kim

Appl. Phys. Lett. 65, 965 (1994); http://dx.doi.org/10.1063/1.112163 (3 pages) | Cited 5 times

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The evolution of tensile to compressive stress has been found in plasma enhanced chemical vapor deposited W thin films incorporated with N atoms. The magnitude of stress varies from 6.25×109 to −7.79×109 dyne/cm2, corresponding to an increase of N atoms. In order to reduce the high tensile stress of a W film, W67N33 is interposed between W and Si. As a result, the stress of the W67N33/W bilayer relaxes from 7.98×109 to 3.41×109 dyne/cm2 after annealing at 900 °C for 30 min, which is ascribed to the interfacial pseudodiffusion layer formed at the interface of W and W67N33.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Broad fullerene‐ion beam generation and bombardment effects

P. D. Horak and U. J. Gibson

Appl. Phys. Lett. 65, 968 (1994); http://dx.doi.org/10.1063/1.112164 (3 pages) | Cited 5 times

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We report the generation of a large, moderate current density beam of fullerenes from a Kaufman ion source, and initial results on the use of the beam for ion assisted deposition of MgF2 and for growth of hard amorphous carbon films. A 50–100 μA/cm2 beam of fullerenes approximately 3.0 cm in diameter was generated; singly and doubly ionized fullerenes were observed after passage through a mass analyzer, with little or no indication of breakdown of the fullerenes. The beam energy was varied over the range 100–700 eV, and continuous beam operation was maintained for approximately 30 min on an initial charge of 150 mg of fullerenes. Low friction, wear resistant coatings were generated from fullerene‐ion bombardment of fullerene neutrals, and optical degradation of MgF2 films bombarded during growth was observed.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.60.Bs Mechanical and acoustical properties
07.77.-n Atomic, molecular, and charged-particle sources and detectors
61.46.-w Structure of nanoscale materials

Deposition of high quality cubic boron nitride films on nickel substrates

Fangqing Zhang, Yongping Guo, Zhizhong Song, and Guanghua Chen

Appl. Phys. Lett. 65, 971 (1994); http://dx.doi.org/10.1063/1.112166 (3 pages) | Cited 22 times

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The well‐crystallized cubic boron nitride (c‐BN) films have been prepared on polycrystalline Ni substrates using a hot filament assisted rf plasma chemical vapor deposition method. X‐ray diffraction showed that high quality c‐BN films had been deposited without hexagonal BN (h‐BN) or amorphous BN codeposition. Both (111) and (100) faces were observed in scanning electron microscopy images. These results suggested that Ni had catalyst effects on the nucleation and the growth of c‐BN phase and inhibited the formation of h‐BN.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Scanning tunneling microscopy based lithography of octadecanethiol on Au and GaAs

M. J. Lercel, G. F. Redinbo, H. G. Craighead, C. W. Sheen, and D. L. Allara

Appl. Phys. Lett. 65, 974 (1994); http://dx.doi.org/10.1063/1.113012 (3 pages) | Cited 26 times

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We have demonstrated that low energy electron beams (≤10 eV) from a scanning tunneling microscope (STM) can be used to modify a surface of self‐assembled monolayers of octadecanethiol [ODT, CH3(CH2)17SH] on gold and GaAs. STM modification in air was used to produce grating patterns up to 140 μm in total size. Line sizes as small as 15 nm were produced in ODT on GaAs at a bias of 10 V, and slightly larger sizes were produced on the gold substrate. Biases of greater than 4 V are necessary for the fabrication of these raised lines, as observed with an atomic force microscope (AFM). The patterns in ODT on gold were successfully transferred into the gold layer with a wet chemical etch demonstrating that the monolayer performs as a positive electron beam resist.
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81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

X‐ray diffractometric characterization of the GaAsP/GaAs and InGaAs/GaAsP superlattices grown on offcut GaAs(001) substrate by means of the reciprocal space mapping

J. Gaca and M. Wojcik

Appl. Phys. Lett. 65, 977 (1994); http://dx.doi.org/10.1063/1.112167 (3 pages) | Cited 1 time

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A technique of mapping a region of reciprocal space near a given substrate reflection using a standard powder diffractometer enabling (θ−ω/2θ) scan is applied to investigate superlattices grown on misoriented substrate. The parameters describing superlattice geometry are calculated on the basis of collected diffraction data. The accuracy of the results is compared with that of other techniques.
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61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
68.55.-a Thin film structure and morphology

Atomic‐scale wear properties of muscovite mica evaluated by scanning probe microscopy

Shojiro Miyake

Appl. Phys. Lett. 65, 980 (1994); http://dx.doi.org/10.1063/1.112168 (3 pages) | Cited 13 times

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Atomic‐scale wear properties of muscovite mica were evaluated in terms of friction force and surface topographic changes using a scanning probe microscope. Friction from a load of 100–300 nN generated a 1‐nm‐deep wear groove which corresponded to the depth from the surface of one cleavage plane to the surface of the next periodic cleavage plane. The atomic image of the bottom surface of the wear groove corresponds to the basal plane of mica.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Gy Mechanical properties; surface strains

Electrochemical Er doping of porous silicon and its room‐temperature luminescence at ∼1.54 μm

T. Kimura, A. Yokoi, H. Horiguchi, R. Saito, T. Ikoma, and A. Sato

Appl. Phys. Lett. 65, 983 (1994); http://dx.doi.org/10.1063/1.112169 (3 pages) | Cited 99 times

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We present a new electro‐chemical method for incorporating high concentration Er ions deep into porous silicon layers and its intense photoluminescence at ∼1.54 μm at room temperature. Porous silicon layers prepared by anodic etching of p‐type silicon substrates in HF/H2O are immersed in ErCl3/ethanol solution. Then the negative bias relative to a counter platinum electrode is applied to the samples. Er3+ ions are drawn into fine pores of the porous silicon layers by the electric field. After thermal annealing at ∼1300 °C in an O2/Ar atmosphere, the samples show sharp and intense Er3+‐related photoluminescence at ∼1.54 μm at room temperature upon excitation with an Ar ion laser.
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61.72.uf Ge and Si
78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors
81.65.-b Surface treatments

Compensation of the dangling‐bond space charge in amorphous silicon solar cells by graded low‐level doping in the intrinsic layer

D. Fischer and A. V. Shah

Appl. Phys. Lett. 65, 986 (1994); http://dx.doi.org/10.1063/1.112170 (3 pages) | Cited 3 times

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The compensation of the dangling‐bond space charge in amorphous silicon p‐i‐n solar cells by graded, low‐level doping in the intrinsic layer is discussed and demonstrated experimentally. Carrier collection in p‐i‐n cells without doping indicates that the degraded state space charge is largely positive, and thus that boron doping should be beneficial. Solar cells with linearly decreasing boron doping profiles are shown to yield a homogeneous collection in the intrinsic layer, and a red light conversion efficiency superior to that of undoped cells after light soaking. Also, the optimal doping concentration is shown to be a direct measure of the degraded state defect density.
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84.60.Jt Photoelectric conversion
71.55.Jv Disordered structures; amorphous and glassy solids
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

29.5%‐efficient GaInP/GaAs tandem solar cells

K. A. Bertness, Sarah R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson

Appl. Phys. Lett. 65, 989 (1994); http://dx.doi.org/10.1063/1.112171 (3 pages) | Cited 96 times

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We report on multijunction GaInP/GaAs photovoltaic cells with efficiencies of 29.5% at 1‐sun concentration and air mass (AM) 1.5 global and 25.7% 1‐sun, AM0. These values represent the highest efficiencies achieved by any solar cell under these illumination conditions. Three key areas in this technology are identified and discussed; the grid design, front surface passivation of the top cell, and bottom surface passivation of both cells. Aspects of cell design related to its operation under concentration are also discussed.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
78.66.Fd III-V semiconductors

1.54‐μm photoluminescence from Er‐implanted GaN and AlN

R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu, and J. M. Zavada

Appl. Phys. Lett. 65, 992 (1994); http://dx.doi.org/10.1063/1.112172 (3 pages) | Cited 100 times

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We report the observation of the 1.54‐μm luminescence of optically excited Er3+ in ion‐implanted epitaxially grown GaN and AlN films using below band‐gap excitation. The Er‐implanted layers were co‐implanted with oxygen. At room temperature, this luminescence for GaN grown on sapphire is nearly as intense as it is at 6 or 77 K and exhibits many resolved transitions between crystal‐field levels of the 4I13/2 first excited multiplet and the 4I15/2 ground multiplet.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
42.70.Hj Laser materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Sweep‐out times of electrons and holes in an InGaAs/GaAs multiple quantum well modulator

Ching‐Mei Yang, Daniel Mahgerefteh, E. Garmire, Li Chen, Kezhong Hu, and A. Madhukar

Appl. Phys. Lett. 65, 995 (1994); http://dx.doi.org/10.1063/1.112173 (3 pages) | Cited 4 times

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The switch‐on and switch‐off times of a p‐i‐n diode containing In0.13Ga0.87As/GaAs multiple quantum wells in the i region have been characterized by a time‐resolved pump/probe technique. We observe bias‐insensitive switch‐on times and dramatically increasing switch‐off times with decreasing bias. We use a simple model invoking the cross‐well motion of holes as well as electrons to explain the experimental result. The effective drift velocities of both electrons and holes across the multiple quantum wells at different bias voltages are deduced from this model.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Evaluation of growth temperature, refractive index, and layer thickness of thin ZnTe, MnTe, and CdTe films by in situ visible laser interferometry

G. J. Glanner, H. Sitter, W. Faschinger, and M. A. Herman

Appl. Phys. Lett. 65, 998 (1994); http://dx.doi.org/10.1063/1.112174 (3 pages) | Cited 3 times

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The experimental procedure and the results of in situ determination of growth temperatures, refractive indices at growth temperatures, and thicknesses of ZnTe, cubic MnTe, and CdTe thin films grown by molecular beam epitaxy (MBE) are reported. Visible laser interferometry with He‐Ne laser 0.6328‐μm light has been applied in the performed experiments. A 290‐μm‐thick plane‐parallel GaP wafer polished to an optical finish on both sides has been used as a growth temperature calibration standard. The exemplary substrate temperature calibration curves, as well as the data gained at dynamic thermal conditions are presented and discussed. The following numerical values concerning refractive indices n at elevated temperatures have been evaluated from experimental data for the MBE grown films: n (286 °C)ZnTe=2.51, n (175 °C)ZnTe=2.49, n(286 °C)cubic MnTe=3.26, and the extinction coefficient k (286 °C)CdTe=0.23.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Hf II-VI semiconductors

Observations on the limits to p‐type doping in ZnSe

Y. Fan, J. Han, L. He, R. L. Gunshor, M. S. Brandt, J. Walker, N. M. Johnson, and A. V. Nurmikko

Appl. Phys. Lett. 65, 1001 (1994); http://dx.doi.org/10.1063/1.112205 (3 pages) | Cited 9 times

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In this letter secondary ion mass spectroscopy measurements of nitrogen concentrations in p‐type ZnSe and ZnTe, doped using a nitrogen plasma source with molecular beam epitaxy, are correlated with transport data from the temperature‐dependent Hall effect measurements. The results suggest that, at least for the growth conditions employed in this study, the nitrogen acceptor solubility is the controlling factor in determining that the acceptor concentration in ZnTe exceeds that in ZnSe by about one order of magnitude despite the similar growth conditions.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.uj III-V and II-VI semiconductors
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