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22 Aug 1994

Volume 65, Issue 8, pp. 929-1059

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High‐power InGaAsP/GaAs 0.8‐μm laser diodes and peculiarities of operational characteristics

J. Diaz, I. Eliashevich, X. He, H. Yi, L. Wang, E. Kolev, D. Garbuzov, and M. Razeghi

Appl. Phys. Lett. 65, 1004 (1994); http://dx.doi.org/10.1063/1.112206 (2 pages) | Cited 10 times

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High‐power operation of 3 W in pulse mode, 750 mW in quasi‐continuous wave and 650 mW in continuous wave per uncoated facet from 100‐μm aperture has been demonstrated for 1‐mm‐long cavity InGaAsP/GaAs 808‐nm laser diodes prepared by low‐pressure metalorganic chemical vapor deposition. Threshold current density of 300 A/cm2, differential efficiency of 1.1 W/A, T0=155 °C, transverse beam divergence of 27°, and less than 2‐nm linewidth at 808 nm have been measured. No degradation has been observed after 1000 h of operation in a quasi‐continuous wave regime.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Pressure dependence of the photoluminescence spectra of nitrogen‐doped ZnSe: Evidence of compensating deep donors

Anthony L. Chen, Wladek Walukiewicz, and Eugene E. Haller

Appl. Phys. Lett. 65, 1006 (1994); http://dx.doi.org/10.1063/1.112207 (3 pages) | Cited 12 times

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We have measured the photoluminescence spectra of nitrogen‐doped ZnSe under hydrostatic pressure. From the pressure dependence of the peak positions of the acceptor‐bound exciton and donor‐acceptor‐pair emissions, we show that highly doped samples have two donor‐acceptor‐pair transitions, one involving shallow and one involving deep donors. Our results confirm that one mechanism limiting the free hole concentration is compensation from this deep donor.
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78.55.Et II-VI semiconductors
71.55.Gs II-VI semiconductors
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Indium migration control on patterned substrates for optoelectronic device applications

A. R. Pratt, R. L. Williams, C. E. Norman, M. R. Fahy, A. Marinopoulou, and F. Chatenoud

Appl. Phys. Lett. 65, 1009 (1994); http://dx.doi.org/10.1063/1.112208 (3 pages) | Cited 9 times

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Strained layer InGaAs/GaAs quantum wells have been grown by molecular‐beam epitaxy on patterned (100) GaAs substrates. Indium migration away from the facets of patterned mesas is shown to be strongly dependent upon the arsenic flux during growth. Based upon this effect we have grown structures in which the number of active quantum wells in adjacent areas of a segmented contact device can be varied.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.82.Cr Fabrication techniques; lithography, pattern transfer
85.60.-q Optoelectronic devices

Stochastic Coulomb blockade in a double quantum dot

M. Kemerink and L. W. Molenkamp

Appl. Phys. Lett. 65, 1012 (1994); http://dx.doi.org/10.1063/1.112209 (3 pages) | Cited 41 times

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The series resistance of two coupled quantum dots in a (Al,Ga)As heterostructure has been studied experimentally. At very low lattice temperatures conductance oscillations of irregular amplitude and spacing are observed. The irregularities decrease on raising the temperature. The observations are interpreted as resulting from the stochastic Coulomb blockade effect.
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73.40.Gk Tunneling
73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ey III-V semiconductors

Chemical beam epitaxy growth of 1.3 μm InGaAsP/InP double heterostructure lasers using all gas source doping

T. Sudersena Rao, C. Lacelle, S. J. Rolfe, M. Dion, J. Thompson, P. Marshall, P. Chow‐Chong, D. Ross, M. Davies, and A. P. Roth

Appl. Phys. Lett. 65, 1015 (1994); http://dx.doi.org/10.1063/1.112210 (3 pages) | Cited 1 time

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Low threshold 1.3 μm InGaAsP/InP double heterostructure lasers were fabricated using all gas source chemical beam epitaxy (CBE). Gas source doping of n‐ and p‐type InP and InGaAs was successfully achieved using tetraethyltin and diethylzinc. The minimum threshold current density (Jth) for a 1800 μm cavity length laser was 680 A/cm−2. This is lowest Jth value reported for CBE grown double heterostructure lasers at 1.3 μm. These lasers exhibited an internal quantum efficiency (ηi) and internal loss (αi) of 51% and 16 cm−1, respectively. The temperature dependence of the threshold current is described by a single exponential T0 of 51 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
68.55.-a Thin film structure and morphology

Electronic domain pinning in Pb(Zr,Ti)O3 thin films and its role in fatigue

W. L. Warren, D. Dimos, B. A. Tuttle, R. D. Nasby, and G. E. Pike

Appl. Phys. Lett. 65, 1018 (1994); http://dx.doi.org/10.1063/1.112211 (3 pages) | Cited 209 times

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Switchable polarization can be significantly suppressed in Pb(Zr,Ti)O3 thin films by optical, thermal, and electrical processes. The optical (thermal) suppression effects occur by biasing the ferroelectric near the switching threshold and illuminating the material with band‐gap light (heating the material to ≊100 °C). The electrical suppression effect, commonly known as electrical fatigue, occurs by subjecting the ferroelectric to repeated polarization reversals. It is found that the suppressed polarization in all three cases can be restored to essentially its initial polarization value by injecting electronic charge carriers into the ferroelectric. This strongly suggests that all three forms of degradation involve locking domains by electronic charge trapping centers.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
78.66.Nk Insulators

Aerosol‐assisted chemical vapor deposition of copper: A liquid delivery approach to metal thin films

Christophe Roger, Thomas S. Corbitt, Mark J. Hampden‐Smith, and Toivo T. Kodas

Appl. Phys. Lett. 65, 1021 (1994); http://dx.doi.org/10.1063/1.112165 (3 pages) | Cited 17 times

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Aerosol‐assisted chemical vapor deposition has been used to attain high deposition rates (up to 800 Å min−1 at 140 °C) of crystalline, low‐resistivity (1.7–3.5 μΩ cm) Cu films at low temperatures (120–200 °C) from toluene solutions of (hfac)Cu(1,5‐COD), where 1,5‐COD=1,5‐cyclooctadiene, in a warm‐wall reactor. Activation energies calculated from the deposition rate as a function of the preheating temperatures and the substrate temperature (varying also the nozzle‐substrate distance) were 6.8, 8.9 (0.7 cm), and 9.1 (1.7 cm) kcal mol−1, respectively. The activation energy of 6.8 kcal mol−1 is similar to the enthalpy of vaporization of (hfac)Cu(1,5‐COD).
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells

Ikai Lo, W. C. Mitchel, R. Kaspi, Said Elhamri, and R. S. Newrock

Appl. Phys. Lett. 65, 1024 (1994); http://dx.doi.org/10.1063/1.112141 (3 pages) | Cited 14 times

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We have observed a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells with Shubnikov–de Haas measurements. The saturated reduction of the electron density in the InAs well was about 10%. The electron effective mass was found to be (0.048±0.004) m0 for an electron density of 18.0×1011 cm−2. The electron quantum lifetime decreased as the electron density was reduced by the negative persistent photoconductivity effect due to electron‐hole interaction.
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71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Pz Photoconduction and photovoltaic effects
71.55.Eq III-V semiconductors

Etching effect on metal‐organic molecular‐beam epitaxy growth of GaSb using triethylgallium and trisdimethylaminoantimony

X. F. Liu, H. Asahi, K. Inoue, D. Marx, K. Asami, K. Miki, and S. Gonda

Appl. Phys. Lett. 65, 1027 (1994); http://dx.doi.org/10.1063/1.112142 (3 pages) | Cited 3 times

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Metal‐organic molecular‐beam epitaxy growth of GaSb is investigated for the first time by using the new precursor trisdimethylaminoantimony (TDMASb) together with triethylgallium (TEGa). An etching effect is observed when TDMASb is supplied to the (001) GaSb surface without precracking. The etching rate is dependent on the substrate temperature and TDMASb flow rate, while independent of the TEGa flow rate. GaSb layers can be grown when the TDMASb is precracked in the gas cracker cell. The etching mechanism is discussed in connection with the decomposition process of TDMASb on the surface.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Reaction and regrowth control of CeO2 on Si(111) surface for the silicon‐on‐insulator structure

T. Chikyow, S. M. Bedair, L. Tye, and N. A. El‐Masry

Appl. Phys. Lett. 65, 1030 (1994); http://dx.doi.org/10.1063/1.113011 (3 pages) | Cited 48 times

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The interface structure of CeO2/Si(111) grown by laser ablation in ultrahigh vacuum was investigated by, reflection high‐energy electron diffraction (RHEED), high resolution transmission electron microscopy (HRTEM), and Auger electron spectroscopy (AES). The deposited film was single‐crystalline CeO2. However, during the deposition, a reaction between CeO2 and Si occurred at the interface, that resulted in the formation of an oxygen deficient amorphous CeO2−x and SiO2 layer. Post annealing in oxygen atmosphere caused the regrowth of crystalline CeO2 from CeO2−x and increased of the SiO2 thickness. The modified structure of CeO2/SiO2/Si is expected to be useful as a silicon‐on‐insulator structure since it maintains the desirable SiO2/Si interface followed by a single‐crystal insulating film lattice‐matched to Si.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
68.35.Rh Phase transitions and critical phenomena

GaN epitaxial layers grown on 6H‐SiC by the sublimation sandwich technique

C. Wetzel, D. Volm, B. K. Meyer, K. Pressel, S. Nilsson, E. N. Mokhov, and P. G. Baranov

Appl. Phys. Lett. 65, 1033 (1994); http://dx.doi.org/10.1063/1.112143 (3 pages) | Cited 40 times

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We report on the structural and optical properties of GaN epitaxial layers grown on 6H‐SiC. We employed the sublimation sandwich method to grow single crystal layers at high growth rates with free carrier concentrations of 2×1017 cm−3. Very narrow x‐ray diffraction peaks of the GaN (0002) plane are obtained indicating the high quality of this system. These findings are directly reflected in the optical properties. The photoluminescence shows a single sharp exciton line with a half width of 4 meV. Impurity related donor acceptor transitions are seen with very weak intensities. However, at lower energies the internal luminescence transitions of the 3d transition metal ions Fe and V are observed.
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68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
71.55.Eq III-V semiconductors

Tunneling escape time of electrons from a quantum well with Γ‐Χ mixing effect

Yumin Zhang and Houzhi Zheng

Appl. Phys. Lett. 65, 1036 (1994); http://dx.doi.org/10.1063/1.112144 (3 pages) | Cited 6 times

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By using the envelope function method we calculated the tunneling escape time of electrons from a quantum well. We adopted a simplified interface matrix to describe the Γ‐Χ mixing effect, and employed a wave packet method to determine the tunneling escape time. When the Γ state in the well was in resonance with the Χ state in the barrier, the escape time reduced remarkably. However, it was possible that the wave functions in two different channels, i.e., Γ‐Γ‐Γ and Γ‐Χ‐Γ, could interfere destructively, leading the escape time greater than that of pure Γ‐Γ‐Γ tunneling.
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73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Reaction induced texture of (Bi,Pb)2Sr2Ca2Cu3O10+δ /Ag composite conductors

N. Merchant, J. S. Luo, V. A. Maroni, G. N. Riley, and W. L. Carter

Appl. Phys. Lett. 65, 1039 (1994); http://dx.doi.org/10.1063/1.112145 (3 pages) | Cited 45 times

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A considerable body of evidence collected on silver‐sheathed (Bi,Pb)2Sr2Ca2Cu3O10+δ  (Bi‐2223/Ag) composite conductors heat treated without any additional rolling or pressing (beyond fabrication of the initial composite) has revealed that significant texturing of the Bi‐2223 grains occurs as the Bi‐2223 formation reaction takes place. During heat treatment, Bi‐2223 is produced via a reaction between Bi‐2212 and second phases in the core of the composite. As the Bi‐2223 forms, it develops texture by what appears to be a grain growth mechanism. These concurrent processes ultimately result in a well‐textured, single‐phase conductor even when no additional rolling or pressing is done to the initial composite. This observation raises important questions about the relative contributions of the heat treatment and deformation steps to texture development during conventional oxide‐powder‐in‐tube processing of Bi‐2223/Ag composite conductors.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
74.81.Bd Granular, melt-textured, amorphous, and composite superconductors
84.71.Mn Superconducting wires, fibers, and tapes
74.72.-h Cuprate superconductors

Grain size reduction in Nb3Sn wire using composite powder metallurgy filaments with Cu(Sn) artificial pinning centers

C. L. H. Thieme, D. Rodrigues, and S. Foner

Appl. Phys. Lett. 65, 1042 (1994); http://dx.doi.org/10.1063/1.112146 (3 pages) | Cited 1 time

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Cu(Sn) artificial pinning centers (APCs) were introduced into multifilamentary Nb3Sn wire using powder metallurgy Nb+Cu rods. In the composite Nb+Cu filaments the Cu ribbons had a thickness of either 20 or 5 nm before reaction. During the 600 °C anneal the APCs enhanced the reaction rate and reduced the Nb3Sn grain size to <20 nm. The Cu concentration in the filaments decreased. In 20% Cu‐20 nm APC wires the critical current density over the A15 area was 2250 A/mm2 at 12 T and 4.2 K. Flux pinning increased strongly with decreasing field.
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84.71.Mn Superconducting wires, fibers, and tapes
84.71.Ba Superconducting magnets; magnetic levitation devices
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)

Spontaneous patterning in high temperature superconducting film by liquid‐gas‐solidification processing

H. Chou, T. H. Chow, K. K. Wang, Z. M. Chau, H. S. Chen, E. A. Fitzgerald, and S. N. Hsu

Appl. Phys. Lett. 65, 1045 (1994); http://dx.doi.org/10.1063/1.112147 (3 pages) | Cited 1 time

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Without any post physical or chemical patterning a Tl‐base high temperature superconducting film has been observed to pattern spontaneously on SrTiO3 (100) by liquid‐gas‐solidification process. The film exhibits the morphology of a microelectric network in which the directions of growth of the crystal walls follow the directions of the SrTiO3 (100) substrate. The crystal walls consisting of Tl‐1223 and Tl‐1212 phases are 0.25–1 μm wide, 2 μm high, and a few millimeters long. These walls are proposed to grow from independent nucleation sites and coalescence to form semiconductive junctions. The network exhibits a superconducting transition onset at 113 K and approaches zero resistance at 95 K. Below 95 K, the resistance increases exponentially with decreasing temperature. This strongly suggests that the films form a natural superconductor/semiconductor/superconductor junction array.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
74.50.+r Tunneling phenomena; Josephson effects
68.55.-a Thin film structure and morphology

Ultra‐wide‐band pulse generation and radiation using a high Tc superconductor opening switch

Y. S. Lai, E. E. Funk, W. L. Cao, Chi H. Lee, Zhi‐Yuan Shen, Philip Pang, Dennis J. Kountz, and William L. Holstein

Appl. Phys. Lett. 65, 1048 (1994); http://dx.doi.org/10.1063/1.112148 (3 pages) | Cited 3 times

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A new method of generating ultra‐wide‐band electromagnetic pulses using a Tl2Ba2CaCu2O8 high Tc superconductor as a fast laser activated opening switch is presented. The superconductor is used as an opening switch with a current charged transmission line pulse forming network to produce jitter‐free triggered square pulses which are radiated by an ultra‐wide‐band conical antenna. We report radiation and reception of pulses with center frequencies near 3.5 GHz and a bandwidth in excess of 80%. We also discuss how this technique can be used to assess various wide‐band antenna designs.
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85.25.-j Superconducting devices
84.30.-r Electronic circuits
84.40.Ba Antennas: theory, components and accessories

Ion channeling studies on epitaxially grown a‐axis YBa2Cu3O7−δ films

W. Ito, Y. Yoshida, S. Mahajan, T. Morishita, M. Kumagai, and K. Yabuta

Appl. Phys. Lett. 65, 1051 (1994); http://dx.doi.org/10.1063/1.112149 (3 pages)

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The crystal structure of a‐axis oriented YBa2Cu3Ox (YBCO) films epitaxially grown on SrTiO3 (100) was investigated by ion channeling measurement. The lattice constant in the film plane was determined from the channeling angle through [110]/[103] angular scan measurements and a‐axis lattice constant measured by the x‐ray diffraction technique. The lattice constants of the a axis decreased with increasing film thickness, while the obtained lattice constants in the film plane revealed the close values to the lattice constant of the SrTiO3 substrate (3.905 Å). The relaxation of film strain was evaluated from the χ values estimated from [110]/[103] ion channeling. The χ values increased from 16.7% to 26.4% with increasing film thickness from 500 to 3500 Å. The effect of the strain relaxation on the superconductivity was confirmed for a‐axis oriented YBCO films.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
68.55.-a Thin film structure and morphology

Nonlinear microwave impedance of superconductors and ac response of the critical state

S. Sridhar

Appl. Phys. Lett. 65, 1054 (1994); http://dx.doi.org/10.1063/1.112150 (3 pages) | Cited 27 times

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The hysteretic ac response of the current‐induced critical state of superconducting wires (strips of circular or rectangular cross‐section) is expressed in a surface impedance formulation. The results for the rectangular strip are shown to be in good agreement with experimental results on the high power nonlinear response of superconducting microwave devices. The approach provides a proper framework to understand such nonlinear response.
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74.25.N- Response to electromagnetic fields
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.25.Sv Critical currents
85.25.-j Superconducting devices

Growth and magnetic characterization of face centered cubic Co on (001) diamond

J. A. Wolf, J. J. Krebs, and G. A. Prinz

Appl. Phys. Lett. 65, 1057 (1994); http://dx.doi.org/10.1063/1.112151 (3 pages) | Cited 14 times

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We report the growth and characterization of face centered cubic (fcc) Co epitaxial films (t=10–130 nm) on diamond. Growth was carried out under ultrahigh vacuum conditions in a commercial molecular beam epitaxy machine and monitored during growth using reflection high energy electron diffraction which showed single crystal growth oriented with 〈100〉Co∥〈100〉C. X‐ray diffraction studies of the 130 nm sample demonstrated the single crystal fcc growth throughout the entire sample. Vibrating sample and quantum interference magnetometry yields a magnetic moment of (1.05±0.1)×103 emu/cm3. Ferromagnetic resonance measurements carried out at 35 GHz yield a large cubic anisotropy K1/MS=(−480±30) Oe and linewidth of the order of 110 Oe. Spin waves were observed in the thicker samples and the exchange constant determined to be ACo=1.09×10−6 erg/cm.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
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