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29 Aug 1994

Volume 65, Issue 9, pp. 1067-1197

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Reflection Z‐scan technique for measurements of optical properties of surfaces

D. V. Petrov, A. S. L. Gomes, and Cid B. de Araújo

Appl. Phys. Lett. 65, 1067 (1994); http://dx.doi.org/10.1063/1.112175 (3 pages) | Cited 37 times

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Spatial modification of a Gaussian beam by reflection on a surface of a high‐absorbing material is investigated experimentally. A theoretical description in a geometrical‐optics approach is given. The usefulness and sensitivity of the method for applications in measuring laser induced surface deformation and Kerr‐like nonlinear coefficients is discussed.  
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78.66.-w Optical properties of specific thin films
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
07.60.Rd Visible and ultraviolet spectrometers
42.25.Gy Edge and boundary effects; reflection and refraction

Angular limitations of polymer‐based waveguide holograms for 1‐to‐many V‐shaped surface‐normal optical interconnects

Maggie M. Li, Ray T. Chen, Suning Tang, and Dave Gerold

Appl. Phys. Lett. 65, 1070 (1994); http://dx.doi.org/10.1063/1.112176 (3 pages) | Cited 3 times

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Experimental results of 1‐to‐2 intraplane and of 1‐to‐32 interplane V‐shaped fanouts are delineated. Coupling efficiencies of 48% for surface‐normal and of 45% for near‐surface‐normal interplane fanout beams are theoretically and experimentally confirmed. The influence of the angular fluctuation of a device having two multiplexed waveguide holograms with film thickness of 15 μm and index modulation of 0.04 is studied. The angle between the two grating vectors is determined to be less than 26° to keep the near‐surface‐normal fanout beams.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.82.Ds Interconnects, including holographic interconnects

Epitaxial KNbO3 thin films on KTaO3, MgAl2O4, and MgO substrates

A. F. Chow, D. J. Lichtenwalner, R. R. Woolcott, T. M. Graettinger, O. Auciello, A. I. Kingon, L. A. Boatner, and N. R. Parikh

Appl. Phys. Lett. 65, 1073 (1994); http://dx.doi.org/10.1063/1.112129 (3 pages) | Cited 16 times

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Epitaxial potassium niobate (KNbO3) thin films have been deposited on KTaO3 (100), MgAl2O4 (100), and MgO (100) substrates using ion‐beam sputter deposition. X‐ray‐diffraction results show that KNbO3 films have orthorhombic (110) orientation on all three substrates. Rutherford backscattering channeling analysis of KNbO3 films on KTaO3, MgAl2O4, and MgO exhibits minimum scattering yields (χmin) of 7%, 9%, and 18% for the Nb peak, respectively. This illustrates how the quality of epitaxy improves as the lattice mismatch decreases. Prism‐coupling measurements reveal near‐bulk refractive indices of about 2.27 for TE modes and 2.22 for TM modes for films on each substrate.
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68.55.-a Thin film structure and morphology
78.66.Nk Insulators

Franz–Keldysh effect in an optical waveguide containing a resonant tunneling diode

S. G. McMeekin, M. R. S. Taylor, B. Vögele, C. R. Stanley, and C. N. Ironside

Appl. Phys. Lett. 65, 1076 (1994); http://dx.doi.org/10.1063/1.112130 (3 pages) | Cited 9 times

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Optical modulation in a waveguide containing a resonant tunneling diode has been observed. The observations are in agreement with a model which assumes that the modulation effect is due to a Franz–Keldysh band‐edge shift produced by the electric field developed over a depletion region association with operation of the resonant tunneling diode. The effect has device potential for optical modulation at microwave frequencies.
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42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors
73.40.Gk Tunneling
42.79.Hp Optical processors, correlators, and modulators

Narrow bandwidth volume holographic optical filter operating at the Kr transition at 1547.82 nm

Victor Leyva, George A. Rakuljic, and Bruce O’Conner

Appl. Phys. Lett. 65, 1079 (1994); http://dx.doi.org/10.1063/1.112131 (3 pages) | Cited 44 times

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We describe and characterize a narrow bandwidth volume holographic optical filter operating at the Krypton transition line (1s2‐2p8) at 1547.82 nm, which corresponds to the center wavelength of the proposed International Telecommunications Union wavelength standard. A reflectivity of 98% and a bandwidth full width at half‐maximum of 0.18 nm are measured. The filter exhibits clean sideholes with a −20 dB optical response 0.5 nm away from the peak. The filter can be fabricated and operated with an absolute wavelength precision better than 0.005 nm.
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42.79.Ci Filters, zone plates, and polarizers
42.40.-i Holography

Narrowband mid‐infrared generation using KTiOAsO4

A. H. Kung

Appl. Phys. Lett. 65, 1082 (1994); http://dx.doi.org/10.1063/1.112132 (3 pages) | Cited 7 times

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Continuously tunable mid‐infrared radiation from 3.0 to 5.3 μm was produced by difference frequency mixing in KTiOAsO4. A photon efficiency of 7% for conversion to 4.4 μm was achieved, providing peak power exceeding 250 kW, and pulse energy of over 0.5 mJ in a 2 nanosecond pulse. An absorption spectrum of CO2 in air with better than 1 cm−1 resolution was obtained simply by scanning the wavelength of one of the input lasers.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
42.72.Ai Infrared sources

Ultraviolet second harmonic generation in radio‐frequency sputter‐deposited aluminum nitride thin films

P. M. Lundquist, W. P. Lin, Z. Y. Xu, G. K. Wong, E. D. Rippert, J. A. Helfrich, and J. B. Ketterson

Appl. Phys. Lett. 65, 1085 (1994); http://dx.doi.org/10.1063/1.112134 (3 pages) | Cited 14 times

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Optical second harmonic generation in radio‐frequency sputter‐deposited AlN thin films has been studied for harmonic wavelengths from ultraviolet to near infrared. The effective second‐order nonlinearity χ(2)(ω) was determined to have a nonresonant background value of ∼5×10−9 esu for second harmonic wavelengths longer than 400 nm, and it increases dramatically as the second harmonic frequency approaches the bandgap of 6.2 eV. This is likely due to resonance of the second harmonic frequency with the critical point transition associated with the direct bandgap of AlN.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Fd III-V semiconductors
81.15.Cd Deposition by sputtering
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Photoinduced light scattering in LiTaO3:Nd crystal

Xinglong Wu, Ming‐sheng Zhang, Xiaoyuan Chen, Xiangkang Meng, and Duan Feng

Appl. Phys. Lett. 65, 1088 (1994); http://dx.doi.org/10.1063/1.112135 (3 pages) | Cited 8 times

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Photoinduced light scattering of LiTaO3:Nd crystal (0.1 wt %) was examined by using a focused He‐Ne laser beam. When an ordinary incident beam illuminates the sample along the y axis, the scattered light is asymmetrical in the xy plane, and the scattered intensities display a time‐dependent distribution with a gradual increase and decrease for the ordinary and extraordinary beams, respectively. The situation is reversed for an extraordinary incident beam. When an incident beam with ordinary or extraordinary polarizations illuminates the sample along the x axis, two scattered specklons are dependent upon the crossing angle with almost the same intensity. We attribute them to a new photorefractive effect due to the microstructure change in LiTaO3 crystal with Nd doping. In addition, Raman spectra concerning the observed scattered structures are also measured and elucidated.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.25.Fx Diffraction and scattering
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Giant surface acoustic waves generated by a multiple beam laser: Application to the detection of surface breaking slots

C. Chenu, M.‐H. Noroy, and D. Royer

Appl. Phys. Lett. 65, 1091 (1994); http://dx.doi.org/10.1063/1.112107 (3 pages) | Cited 3 times

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Giant surface acoustic wave (SAW) pulses have been generated by implementing on the surface of a solid an array of strip thermoelastic sources. It is shown experimentally, with a 16‐beam pulsed YAG laser, that the delays introduced between the laser emission times allow the constructive summation of the SAW pulses. Mechanical displacements larger than 20 nm on a steel sample and 50 nm on aluminum were detected by a heterodyne optical interferometer. Examples of noncontact and nondestructive detection of thin surface breaking slots are presented.
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43.35.Pt Surface waves in solids and liquids
43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products
43.38.Zp Acoustooptic and photoacoustic transducers
43.38.Rh Surface acoustic wave transducers

Epitaxial growth of iridium and platinum films on sapphire by metalorganic chemical vapor deposition

Roberto Vargas, Takashi Goto, Wei Zhang, and Toshio Hirai

Appl. Phys. Lett. 65, 1094 (1994); http://dx.doi.org/10.1063/1.112108 (3 pages) | Cited 36 times

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Ir and Pt epitaxial films were grown on (0001), (1120), and (0112) sapphire by metalorganic chemical vapor deposition using Ir‐ or Pt‐acetylacetonate precursors. The epitaxial growth was achieved at deposition temperatures between 500 and 600 °C with the addition of oxygen to the source vapor. The film orientation and epitaxial relationships between films and substrates were determined by x‐ray diffraction, x‐ray pole figures, and reflection high energy electron diffraction. Ir films on (1120) sapphire grow in [100] orientation. Ir or Pt films on (0112) and (0001) sapphire grow in [111] orientation. Ir films on (0001) sapphire contain two in‐plane orientations related by a 180° rotation, while Pt films containing only one in‐plane orientation can be obtained on (0112) and (0001) sapphire.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Core‐level photoemission and the structure of the Si/SiO2 interface: A reappraisal

Mark M. Banaszak Holl, Sunghee Lee, and F. R. McFeely

Appl. Phys. Lett. 65, 1097 (1994); http://dx.doi.org/10.1063/1.112109 (3 pages) | Cited 39 times

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Photoemission spectroscopy of spherosiloxane cluster derived Si/SiOx interfaces has allowed the direct assignment of observed spectral features to specific chemical moieties. The implications of these assignments for structural models of the Si/SiO2 interface are explored. Models specifically constructed to be consistent with photoemission data are shown to be incorrect after reanalysis of core‐level shifts based on the recently synthesized model systems. A new model for the Si/SiO2 interface is proposed which is consistent with the current understanding of photoemission for Si/SiOx interfaces as well as with results from numerous other experiments.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
79.60.Jv Interfaces; heterostructures; nanostructures

Significantly improved mechanical properties in Pb‐free, Sn‐Zn‐In solder alloy by Ag doping

M. McCormack, G. W. Kammlott, H. S. Chen, and S. Jin

Appl. Phys. Lett. 65, 1100 (1994); http://dx.doi.org/10.1063/1.112110 (3 pages) | Cited 9 times

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The 87%Sn‐8%Zn‐5%In alloy is a new Pb‐free solder designed for possible drop‐in replacement of Pb‐Sn solders. This Sn‐Zn‐In solder has a melting point of ∼188 °C, which is comparable to that of the widely used eutectic Pb‐Sn solder. However, because of the rather coarse and nonuniform distribution of platelike, dendritic features throughout the microstructure, the alloy exhibits a limited ductility (tensile elongation of ∼20%). In this letter, we show that the addition of small amounts of Ag (as small as 0.1%) dramatically improves the tensile ductility to ∼40%. The observed improvement in ductility is attributed to the elimination of the coarse planar features and nonuniformities within the microstructure. The addition of Cu has a similar beneficial effect, although it is less preferable to the Ag addition from the stand point of melting temperature.
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62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
81.05.Bx Metals, semimetals, and alloys

Application of limited reaction processing to atomic layer epitaxy: Growth of cadmium telluride using diisopropyl telluride and dimethyl cadmium

Robert M. Emerson, Judy L. Hoyt, and James F. Gibbons

Appl. Phys. Lett. 65, 1103 (1994); http://dx.doi.org/10.1063/1.112111 (3 pages) | Cited 5 times

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A new thin film growth technique is introduced which combines the advantages of atomic layer epitaxy and limited reaction processing. Using this technique, the temperature of each portion of the atomic layer growth cycle may be individually optimized. In this work, thin films of cadmium telluride are grown using diisopropyl telluride and dimethyl cadmium. Experimental results show that isothermal atomic layer epitaxy is not possible using these two reactants, as the self‐limited temperature regimes for the cadmium and tellurium deposition cycles differ by approximately 150 °C. Layer‐by‐layer, self‐limited growth is demonstrated using the new growth technique, using temperature ranges of 150 to 175 °C and 300 to 320 °C for the cadmium and tellurium deposition cycles, respectively.
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68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Growth of high quality single‐domain single‐crystal films of PbTiO3

Z. Li, C. M. Foster, D. Guo, H. Zhang, G. R. Bai, P. M. Baldo, and L. E. Rehn

Appl. Phys. Lett. 65, 1106 (1994); http://dx.doi.org/10.1063/1.112112 (3 pages) | Cited 28 times

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Single‐crystal films of PbTiO3 have been deposited on (100) SrTiO3 substrates by metalorganic chemical vapor deposition. X‐ray diffraction spectra and transmission electron microscopy images revealed that the development of 90° domains was directly related to the thickness of the film. Single‐domain, single‐crystal films were obtained for film thickness less than 150 nm. The minimum yields of the films in ion‐channeling experiments were only 3 %, similar to that of a perfect single crystal. The ordinary refractive index of the film measured by optical waveguiding experiment was also the same as that of PbTiO3 single crystals.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
78.66.Nk Insulators

Tribological improvements of polished chemically vapor deposited diamond films by fluorination

S. Miyake

Appl. Phys. Lett. 65, 1109 (1994); http://dx.doi.org/10.1063/1.112113 (3 pages) | Cited 6 times

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In an effort to realize wear resistant and lubricating surfaces, polished chemically vapor deposited (CVD) diamond films are fluorinated. The effect of these films on improving frictional properties is then investigated. On fluorinated diamond surfaces, C—F bonds are formed and carbon and oxygen contents decrease. Fluorination can reduce the surface energy, as evaluated by contact angle to the water. The relationship between friction coefficient and initial Hertzian stress of polished diamond film can be expressed as one curve designated as the ‘‘master curve’’ independent of tip radius and material. Fluorination decreases friction coefficient and change of friction coefficient of polished CVD diamond with increasing load and opposing tip radius.
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81.65.-b Surface treatments
68.35.Gy Mechanical properties; surface strains
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Identification of VSe‐impurity pairs in ZnSe:N

T. A. Kennedy, E. R. Glaser, B. N. Murdin, C. R. Pidgeon, K. A. Prior, and B. C. Cavenett

Appl. Phys. Lett. 65, 1112 (1994); http://dx.doi.org/10.1063/1.112114 (3 pages) | Cited 15 times

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Optically detected magnetic resonance (ODMR) of heavily nitrogen‐doped ZnSe at 24 GHz reveals an anisotropic spectrum which can be assigned to a deep donor comprised of a Se vacancy paired with an impurity. The newly resolved spectrum is trigonal along 〈111〉 with g∥=2.0072(2) and g⊥=2.0013(2). Comparison of this g tensor with previous work leads to the assignment of the spectrum to VSe‐X, where X is most probably Cu or Ag. Combining this result with previous photoluminescence and ODMR work shows that ZnSe:N has three distinct donors which include both impurities and intrinsic defects.  
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71.55.Gs II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
76.70.Hb Optically detected magnetic resonance (ODMR)
78.55.Et II-VI semiconductors

Atomic layer epitaxy of AlAs using ethyldimethylamine alane as a new aluminum source

Nobuo Kano, Shingo Hirose, Kazuhiko Hara, Junji Yoshino, Hiro Munekata, and Hiroshi Kukimoto

Appl. Phys. Lett. 65, 1115 (1994); http://dx.doi.org/10.1063/1.112977 (3 pages) | Cited 4 times

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Atomic layer epitaxy (ALE) of AlAs layers has been studied with the alternate supplies of ethyldimethylamine alane (EDMAAl) and arsine as aluminum and arsenic sources. Self‐limiting growth at either one‐ or two‐monolayer per source supply cycle is clearly observed under the specific growth conditions defined by the substrate temperatures (250–650 °C) and the flow rates of EDMAAl (0.8–1.1 and 1.5–1.7×10−2 sccm). Carbon concentration in the resultant AlAs layers is estimated to be about 1017–1018 cm−3.
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68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Demonstration of quantum confinement in InSb‐In1−xAlxSb multiquantum wells using photoluminescence spectroscopy

M. K. Saker, D. M. Whittaker, M. S. Skolnick, C. F. McConville, C. R. Whitehouse, S. J. Barnett, A. D. Pitt, A. G. Cullis, and G. M. Williams

Appl. Phys. Lett. 65, 1118 (1994); http://dx.doi.org/10.1063/1.112115 (3 pages) | Cited 12 times

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We report the observation of quantum confinement, using photoluminescence, in InSb‐In1−xAlxSb (0.08≤x≤0.23) multiquantum well samples grown by molecular beam epitaxy. A series of samples were studied with different well widths and varying concentration of aluminum in the barriers. The upshifted luminescence energies behave qualitatively as expected due to changes in confinement, and are in good quantitative agreement with calculated upshifts taking into account strain in the barriers. These results demonstrate that good quality heterostructures can be obtained in this material system and show its potential for device applications.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

M. Asif Khan, J. N. Kuznia, D. T. Olson, W. J. Schaff, J. W. Burm, and M. S. Shur

Appl. Phys. Lett. 65, 1121 (1994); http://dx.doi.org/10.1063/1.112116 (3 pages) | Cited 148 times

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We fabricated a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance. The device exhibited an excellent pinch‐off and a low parasitic output conductance in the saturation regime. We measured the cutoff frequency fT and the maximum oscillation frequency fmax as 11 and 35 GHz, respectively. These values are superior to the highest reported values for field effect transistors based on other wide band‐gap semiconductors such as SiC. These results demonstrate an excellent potential of AlGaN/GaN HFETs for microwave and millimeter wave applications.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Submicrometer resonant tunnelling diodes fabricated by photolithography and selective wet etching

J. Wang, P. H. Beton, N. Mori, H. Buhmann, L. Mansouri, L. Eaves, P. C. Main, T. J. Foster, and M. Henini

Appl. Phys. Lett. 65, 1124 (1994); http://dx.doi.org/10.1063/1.112117 (3 pages) | Cited 15 times

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A new process based on photolithography and selective wet etching has been used to fabricate small area resonant tunnelling diodes. The low‐temperature current‐voltage (I‐V) characteristics of diodes with conducting widths less than 0.1 μm show additional peaks due to 1D lateral quantum confinement. We observe a pronounced asymmetry in I‐V which we explain in terms of tunnelling from emitter states which have a different degree of lateral quantum confinement.
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73.40.Gk Tunneling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
81.65.-b Surface treatments

Influence of effective‐medium dielectric constant on electronic transport in an arylamine‐containing glassy polymer

M. Abkowitz, J. S. Facci, and M. Stolka

Appl. Phys. Lett. 65, 1127 (1994); http://dx.doi.org/10.1063/1.112118 (3 pages) | Cited 3 times

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The extent to which transport behavior can be simply correlated with the macroscopic dielectric properties of a transport polymer is explored by employing a ‘‘vapor doping’’ procedure as a means of reversibly varying its bulk dielectric properties. Under controlled uptake and subsequent outgassing of polar CH3CN vapor, the hole drift mobility of the transport polymer PTPB is monitored, while its relative dielectric constant is reversibly varied between ϵ=3.7, its undoped value, and ϵ=6.0, its saturation value at room temperature. There is neither an associated change in hole drift mobility nor in the dispersion of injected carrier transit times. When the same procedure is carried out on a closely related molecularly doped polymer TPD in polycarbonate, an increase in dispersion is clearly indicated but the transit time of the fastest carriers remains unaffected.
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73.61.Ph Polymers; organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)
73.50.Dn Low-field transport and mobility; piezoresistance
77.55.-g Dielectric thin films

Intersubband hole absorption in GaAs‐GaInP quantum wells grown by gas source molecular beam epitaxy

G. J. Brown, S. M. Hegde, J. Hoff, C. Jelen, S. Slivken, E. Michel, O. Duchemin, E. Bigan, and M. Razeghi

Appl. Phys. Lett. 65, 1130 (1994); http://dx.doi.org/10.1063/1.112119 (3 pages) | Cited 3 times

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P‐doped GaAs‐GaInP quantum wells have been grown on GaAs substrate by gas source molecular beam epitaxy. Structural quality has been evidenced by x‐ray diffraction. A narrow low‐temperature photoluminescence full width at half‐maximum has been measured. Strong hole intersubband absorption has been observed at 9 μm, and its dependence on light polarization has been investigated.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Surface cleaning effect on dielectric integrity for ultrathin oxynitrides grown in N2O

Ming‐yin Hao, Kafai Lai, Wei‐Ming Chen, and Jack C. Lee

Appl. Phys. Lett. 65, 1133 (1994); http://dx.doi.org/10.1063/1.112120 (3 pages) | Cited 7 times

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In this study, we developed a wafer‐cleaning procedure for ultrathin dielectric growth. This involves a modified RCA clean, a dilute‐HF dip and a subsequent immersion in methanol/HF solution. Ultrathin (≊42 Å) oxynitride films were grown in pure N2O using this new cleaning procedure and some other schemes to investigate the effects of surface preparation on dielectric integrity. Devices fabricated by this new cleaning procedure were found to exhibit the lowest leakage current level and the best breakdown performance among all samples. The variation in the current‐voltage characteristics across a 4‐in. wafer was also minimized by this two‐step dipping process. The results suggest that the new cleaning procedure is desirable to yield high‐quality ultrathin dielectrics.
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85.40.Hp Lithography, masks and pattern transfer
81.65.-b Surface treatments
85.30.Tv Field effect devices

Suppression of strain relaxation and roughening of InGaAs on GaAs using ion‐assisted molecular beam epitaxy

J. Mirecki Millunchick and S. A. Barnett

Appl. Phys. Lett. 65, 1136 (1994); http://dx.doi.org/10.1063/1.112951 (3 pages) | Cited 11 times

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InxGa1−xAs films with x=0.67 and 0.75 were grown on GaAs (001) using molecular beam epitaxy (MBE) and ion‐assisted MBE. The MBE films roughened and relaxed at 2–4 monolayers, after an initial coherently strained layer‐by‐layer growth stage, in good agreement with previous results. Ion energies <16 eV had little effect on growth. However, increasing the ion energy from 16 to 27 eV during ion‐assisted MBE decreased the rate of strain relaxation and decreased the surface roughness. For x=0.75 and ion energies ≳27 eV, relaxation was eliminated to thicknesses of 50 monolayers, well beyond the Matthews–Blakeslee prediction. We infer from the results that surface roughening of large‐mismatch MBE InGaAs films allows strain relaxation well before misfit dislocations are introduced.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
61.80.Jh Ion radiation effects

Assessment of hot‐hole‐induced interface states and trapped carriers in submicron n (metal–oxide semiconductor field effect transistors) by gate‐to‐drain capacitance measurement

R. Ghodsi, Y. T. Yeow, and M. K. Alam

Appl. Phys. Lett. 65, 1139 (1994); http://dx.doi.org/10.1063/1.112121 (3 pages)

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Change in small‐signal gate‐to‐drain capacitance of an n‐metal–oxide semiconductor field effect transistor as a function of gate and drain voltages before and after drain avalanche hot‐hole injection was used to study the nature of trapped charge. The results show the trapping of holes and generation of acceptor interface states at the top half of the silicon band gap. Comparison with the Pbo dangling bond model was made and the difference explained.  
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.At Surface states, band structure, electron density of states
85.30.Tv Field effect devices
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