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6 Mar 1995

Volume 66, Issue 10, pp. 1157-1293

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Gettering of copper to hydrogen‐induced cavities in silicon

J. Wong‐Leung, C. E. Ascheron, M. Petravic, R. G. Elliman, and J. S. Williams

Appl. Phys. Lett. 66, 1231 (1995); http://dx.doi.org/10.1063/1.113246 (3 pages) | Cited 64 times

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Hydrogen implantation and subsequent thermal annealing is found to result in a well‐defined band of cavities in Si. This band is an extremely efficient gettering layer for Cu which is also introduced into the near surface of Si by ion implantation. Profiling of implanted Cu indicates that ∼95% of an initial 3×1015 cm−2 Cu implant is redistributed following annealing at a temperature of 780 °C from a near‐surface damaged layer to a narrow band of cavities of width ∼1000 Å at a depth of ∼1 μm. Furthermore, the Si between the surface and the cavity band is essentially defect‐free and that some cavities contain the bulk Cu3Si phase. © 1995 American Institute of Physics.
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61.72.Yx Interaction between different crystal defects; gettering effect
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities

Resistance bi‐stability in resonant tunneling diode pillar arrays

B. W. Alphenaar, Z. A. K. Durrani, A. P. Heberle, and M. Wagner

Appl. Phys. Lett. 66, 1234 (1995); http://dx.doi.org/10.1063/1.113247 (3 pages) | Cited 9 times

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We have fabricated and characterized resonant tunneling diode pillar arrays. The array resistance switches between two stable states with a maximum room temperature current peak to valley ratio of 500:1. Both the high and the low resistance states are stable at zero bias suggesting that the device may be used for non‐volatile memory storage. © 1995 American Institute of Physics.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Dislocation filtering in SiGe and InGaAs buffer layers grown by selective lateral overgrowth method

T. Bryskiewicz

Appl. Phys. Lett. 66, 1237 (1995); http://dx.doi.org/10.1063/1.113248 (3 pages) | Cited 2 times

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A quantitative analysis based on the Luryi and Suhir model [Appl. Phys. Lett. 49, 140 (1986)] has shown that the growth of strain relaxed and low dislocation density SixGe1−x and InxGa1−xAs buffer layers on Si and GaAs substrates, respectively, is feasible despite the layer/substrate lattice mismatch. A successful growth of such layers is possible on partially masked substrates by selective lateral overgrowth method. In this case, the buffer layer/substrate misfit stress is of limited lateral extent, in accordance with Saint‐Venant’s principle, and its effective length does not exceed 15% of the seeding window width even for very thick buffer layers. High threading dislocation density in the buffer layer can be avoided by reducing the window width such that the effective stress zone length is comparable with the critical layer thickness for misfit dislocation formation. However, a thin alloy layer deposited by molecular beam epitaxy or metalorganic chemical vapor deposition on both the Si and GaAs substrates, prior to coating with SiO2 mask and patterning with oxide‐free seeding windows, is required for a quite broad range of alloy compositions © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology

Photochemical hole burning of organic dye doped in inorganic semiconductor

Shinjiro Machida, Kazuyuki Horie, and Takashi Yamashita

Appl. Phys. Lett. 66, 1240 (1995); http://dx.doi.org/10.1063/1.113249 (3 pages) | Cited 7 times

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We report a new type photochemical hole burning material; organic dye, zinc porphyrin, doped in inorganic semiconductor, titanium dioxide. The hole burning mechanism of this system is concluded to be photoionization via single‐photon process. The small temperature dependence of Debye–Waller factor was indicated by cyclic annealing experiment. A hole could be burned and observed at 140 K. © 1995 American Institute of Physics.
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42.65.-k Nonlinear optics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

Prevention of oxide formation during liquid phase epitaxy of silicon

K. J. Weber and A. W. Blakers

Appl. Phys. Lett. 66, 1243 (1995); http://dx.doi.org/10.1063/1.113250 (3 pages)

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Successful growth of silicon in a liquid phase epitaxial (LPE) system requires preventing the formation of a native oxide more than a few monolayers thick. It has been found that the desorption of oxygen and water vapor from the ends of the furnace tube can lead to oxidation of silicon wafers located in the tube center, thus inhibiting epitaxy. A simple method to avoid this problem and eliminate the need for long flush times is described. Evidence is presented that indium, a common solvent in LPE of silicon, plays a catalytic role in the oxidation of silicon. © 1995 American Institute of Physics.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Electroluminescence from carbon‐doped GaAs junctions with semi‐insulating GaAs

S. X. Tian, D. Haneman, S. Nozaki, and K. Takahashi

Appl. Phys. Lett. 66, 1246 (1995); http://dx.doi.org/10.1063/1.113251 (3 pages) | Cited 1 time

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Electroluminescence (EL) and photoluminescence have been measured from thin film structures of heavily carbon‐doped GaAs on crystalline semi‐insulating GaAs substrates. EL is only detected when the p‐type film is biased positively. From this and the spectral distribution, it is concluded that there are heterojunction interface states at about 50 meV below the conduction band, with a concentration roughly estimated as 1017 cm−3. © 1995 American Institute of Physics.
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71.55.Eq III-V semiconductors
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.60.Fi Electroluminescence

High dislocation densities in high efficiency GaN‐based light‐emitting diodes

S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald

Appl. Phys. Lett. 66, 1249 (1995); http://dx.doi.org/10.1063/1.113252 (3 pages) | Cited 451 times

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The electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III–V nitride material system have been studied. LEDs with external quantum efficiencies as high as 4% were characterized by transmission electron microscopy and found to contain dislocation densities in excess of 2×1010 cm−2. A comparison to other III–V arsenide and phosphide LEDs shows that minority carries in GaN‐based LEDs are remarkably insensitive to the presence of structural defects. Dislocations do not act as efficient nonradiative recombination sites in nitride materials. It is hypothesized that the benign character of dislocations arises from the ionic nature of bonding in the III–V nitrides. © 1995 American Institute of Physics.
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85.60.Jb Light-emitting devices
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.66.Fd III-V semiconductors
78.60.Fi Electroluminescence

Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy

W. Qian, M. Skowronski, M. De Graef, K. Doverspike, L. B. Rowland, and D. K. Gaskill

Appl. Phys. Lett. 66, 1252 (1995); http://dx.doi.org/10.1063/1.113253 (3 pages) | Cited 160 times

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Microstructure of α‐GaN films grown by organometallic vapor phase epitaxy on sapphire substrates using low temperature AlN (or GaN) buffer layers has been studied by transmission electron microscopy. The defects which penetrate the GaN films are predominantly perfect edge dislocations with Burgers vectors of the 1/3〈1120〉 type, lying along the [0001] growth direction. The main sources of threading dislocations are the low angle grain boundaries, formed during coalescence of islands at the initial stages of GaN growth. The grain sizes range from 50 to 500 nm, with in‐plane misorientations of less than 3°. The nature of these threading dislocations suggests that the defect density would not likely decrease appreciably at increasing film thickness, and the suppression of these dislocations could be more difficult. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology

Low thermal budget in situ removal of oxygen and carbon on silicon for silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor

Mahesh K. Sanganeria, Mehmet C. Öztürk, Katherine E. Violette, Gari Harris, C. Archie Lee, and Dennis M. Maher

Appl. Phys. Lett. 66, 1255 (1995); http://dx.doi.org/10.1063/1.113254 (3 pages) | Cited 9 times

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In this letter, we present experimental evidence on desorption of O and C from a Si surface resulting in impurity levels below the detection levels of secondary ion mass spectroscopy. We then propose a surface preperation method for silicon epitaxy that consists of an ex situ clean and an in situ low thermal budget prebake in an ultrahigh vacuum rapid thermal chemical vapor deposition (UHV‐RTCVD) reactor. The ex situ clean consists of a standard RCA clean followed by a dilute HF dip and rinse in de‐ionized water. The in situ clean is either carried out in vacuum or in a low partial pressure of 10% Si2H6 in H2. The experiments were conducted in an UHV‐RTCVD reactor equipped with oil‐free vacuum pumps. We propose that the responsible mechanism is desorption of oxygen and hydrocarbons from the Si surface due to the low partial pressures of these contaminants in the growth chamber. If Si2H6 is used during the prebake, a sufficiently low growth rate is required in order to provide sufficient time for desorption and avoid Si overgrowth on the O and C sites. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
68.55.-a Thin film structure and morphology

Study of amorphous germanium‐nitrogen alloys through x‐ray photoelectron and Auger electron spectroscopies

A. R. Zanatta, R. Landers, S. G. C. de Castro, G. G. Kleiman, I. Chambouleyron, and M. L. Grilli

Appl. Phys. Lett. 66, 1258 (1995); http://dx.doi.org/10.1063/1.113255 (3 pages) | Cited 8 times

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In this work, experimentally determined values of electron spectroscopic shifts induced by nitrogen in Ge core levels of substoichiometric amorphous germanium‐nitrogen (a‐GeN) alloys are discussed and presented. X‐ray photoelectron spectroscopy (XPS) and x‐ray excited Auger electron spectroscopy (XAES) are employed to study the behavior of the Ge 3d and LMM spectra, respectively, and combined the corresponding XPS and Auger core levels shifts to determine Δα′, the modified Auger parameter shift, which is exempt from problems inherent in the interpretation of XPS and XAES shifts. It is demonstrated how one can use Δα′ to reliably estimate ΔnGe, the change in Ge valence charge in the alloys, and how one can calibrate XPS shifts of Si and Ge based alloys in terms of approximate values of ΔnGe. © 1995 American Institute of Physics.
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71.23.-k Electronic structure of disordered solids
79.60.Ht Disordered structures
79.20.Fv Electron impact: Auger emission

Internal quantum efficiency of thin epitaxial silicon solar cells

Rolf Brendel, Michèle Hirsch, Michael Stemmer, Uwe Rau, and Jürgen H. Werner

Appl. Phys. Lett. 66, 1261 (1995); http://dx.doi.org/10.1063/1.113256 (3 pages) | Cited 10 times

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A new theoretical expression is derived for the internal quantum efficiency of solar cells homoepitaxially grown on highly doped monocrystalline substrates. This expression is used to characterize our thin‐layer silicon cells grown by chemical vapor deposition. These cells reach a confirmed efficiency of 17.3% although the active layer thickness is only 48 μm. The internal quantum efficiency analysis demonstrates that the open circuit voltage is limited by carrier injection into the highly doped substrate. Carrier generation in the substrates accounts for 0.7% of the short circuit current. © 1995 American Institute of Physics.
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84.60.Jt Photoelectric conversion
73.50.Pz Photoconduction and photovoltaic effects

Atomic ordering of GaInP studied by Kelvin probe force microscopy

Y. Leng, C. C. Williams, L. C. Su, and G. B. Stringfellow

Appl. Phys. Lett. 66, 1264 (1995); http://dx.doi.org/10.1063/1.113257 (3 pages) | Cited 30 times

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The atomic ordering of GaInP has been established and studied by a variety of methods, including transmission electron microscopy, cathodoluminescence, and photoluminescence. In this work, a Kelvin probe force microscope (KPFM) has been employed to image several GaInP samples previously characterized by these established techniques. The results of our study clearly show that the KPFM is capable of distinguishing between ordered and disordered regions in GaInP, and that the KPFM contrast strongly depends on the amplitude of the applied ac bias voltage of the KPFM. The measurements indicate that ordering in GaInP modifies the density and/or lifetime of the surface states. © 1995 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
73.20.At Surface states, band structure, electron density of states
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Imaging radio‐frequency fields using a scanning SQUID microscope

R. C. Black, F. C. Wellstood, E. Dantsker, A. H. Miklich, D. Koelle, F. Ludwig, and J. Clarke

Appl. Phys. Lett. 66, 1267 (1995); http://dx.doi.org/10.1063/1.113258 (3 pages) | Cited 17 times

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Using a liquid‐nitrogen‐cooled scanning SQUID magnetic microscope, we have developed a technique for broadband imaging of radio‐frequency (rf) and microwave fields with a spatial resolution of about 15 μm. We have produced images of the amplitude of 50 MHz fields with an rms noise of 2.6 nT and a 300 μm/s scan rate. Detection is accomplished by using the nonlinearity of the voltage‐flux characteristic of the SQUID to rectify the rf fields. Our present technique is limited by cavity mode resonances in the SrTiO3 substrate of our SQUID sensor. Using a small excitation probe, we have directly imaged these resonances at frequencies up to about 12.5 GHz. © 1995 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
07.79.-v Scanning probe microscopes and components
07.55.Ge Magnetometers for magnetic field measurements

Magneto‐optical imaging of flux patterns in multifilamentary (BiPb)2Sr2Ca2Cu3Ox composite conductors

U. Welp, D. O. Gunter, G. W. Crabtree, J. S. Luo, V. A. Maroni, W. L. Carter, V. K. Vlasko‐Vlasov, and V. I. Nikitenko

Appl. Phys. Lett. 66, 1270 (1995); http://dx.doi.org/10.1063/1.113259 (3 pages) | Cited 29 times

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We present a study of the superconducting morphology of the transport current carrying cross section of a 19‐filament (BiPb)2Ca2Cu3Ox (Bi‐2223) composite conductor using magneto‐optical imaging of magnetic flux patterns. In conjunction with electron microscopy on the same sample this technique allows a unique correlation of superconducting and microstructural properties. Direct evidence for enhanced superconducting properties in platelike regions along the silver/Bi‐2223 interface and for weak properties near the core of the filaments is obtained. Misaligned grain colonies are found to cause an interruption of the superconducting continuity in the filaments. © 1995 American Institute of Physics.
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84.71.Mn Superconducting wires, fibers, and tapes
74.25.Sv Critical currents
74.72.-h Cuprate superconductors

Crystalline quality analysis of YBaCuO ultrathin films by high resolution ion backscattering and channeling spectrometry

D. Hüttner, O. Meyer, J. Reiner, and G. Linker

Appl. Phys. Lett. 66, 1273 (1995); http://dx.doi.org/10.1063/1.113260 (3 pages) | Cited 5 times

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Medium energy ion scattering combined with channeling was applied to study the crystalline quality of ultrathin YBaCuO films on (100) SrTiO3 and MgO substrates. Films with thicknesses between 3 and 6 nm were deposited by inverted cylindrical magnetron sputtering. Under optimized growth conditions c‐axis oriented growth was obtained with minimum yield values of 2%–12% (depending on thickness) for films on SrTiO3 and 23% on MgO. On the surface of the films a disordered region with a thickness of about 0.6 nm independent of substrate, film thickness, and storage time under ambient conditions was observed. During etching experiments an Y‐oxide layer was formed on the surface. For films on SrTiO3 at thicknesses above 4 nm an abrupt increase in the minimum yield was found indicating pseudomorphic growth up to this thickness. In contrast, for films on MgO it was found that a critical film thickness of about 3.6 nm is necessary for the formation of a homogeneous film. © 1995 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
68.55.-a Thin film structure and morphology
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Steady state pulsed laser deposition target scanning for improved plume stability and reduced particle density

C. Doughty, A.T. Findikoglu, and T. Venkatesan

Appl. Phys. Lett. 66, 1276 (1995); http://dx.doi.org/10.1063/1.113261 (3 pages) | Cited 11 times

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A pulsed laser deposition (PLD) oscillating target scanning technique, in which the laser ablates the target from opposing directions as the deposition proceeds, is described and compared to the conventional technique of target rotation over a cumulative ablation exposure of ∼1500 shots/site. Using conventional rotation the plume direction is eventually displaced by 6° while both the number density and size of PLD associated particles increase. In contrast, the oscillating technique results in a spatially stable plume (displacement <2°) while the particle density and size both decrease. This technique allows one to operate in a steady state mode without routine target maintenance, improves plume ‘‘walk off,’’ and deposition reproducibility while decreasing the production of particles. © 1995 American Institute of Physics.  
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81.15.Fg Pulsed laser ablation deposition
74.78.-w Superconducting films and low-dimensional structures

Structure and magneto‐optical properties of epitaxial PtMnSb(001) on W(001)/MgO(001)

M. C. Kautzky and B. M. Clemens

Appl. Phys. Lett. 66, 1279 (1995); http://dx.doi.org/10.1063/1.113262 (3 pages) | Cited 20 times

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The growth of high‐quality, sputter‐deposited epitaxial PtMnSb(001) on W(001)/MgO(001) is described. X‐ray diffraction results indicate that PtMnSb grows unrotated on the W seed layer with a modest in‐plane tensile strain. Polar magneto‐optic Kerr effect measurements show a peak rotation of 1.02° at 575 nm. In‐plane magnetization is observed, indicating that the level of strain in the film is insufficient to induce perpendicular magnetization. © 1995 American Institute of Physics.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
78.20.Ls Magneto-optical effects
75.80.+q Magnetomechanical effects, magnetostriction
68.55.-a Thin film structure and morphology

Effects of additives on the preferred orientation of Mn–Zn ferrite thin films deposited by ion beam sputtering

Hae Seok Cho and Hyeong Joon Kim

Appl. Phys. Lett. 66, 1282 (1995); http://dx.doi.org/10.1063/1.113270 (3 pages) | Cited 3 times

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We investigated the effects of additives on the preferred orientation of the Mn–Zn ferrite thin films deposited on SiO2(1000 Å)/Si(100) at 350 °C by ion beam sputtering. A mosaic target, consisting of a single crystal (100) Mn–Zn ferrite with a metal strip on it, was employed as the target. The preferred orientation of the ferrite films was (hhh) for the target with or without Fe and Zn additives, and (h00) for Ti addition. In the case of Cu addition, a weak (311) orientation appeared with a strong (hhh) preferred orientation. The origin of the changes in the preferred orientation with different additives was discussed. The easy axis of magnetization, however, lay in the direction parallel to the film plane due to large shape anisotropy, irrespective of the preferred orientation. © 1995 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
81.15.Cd Deposition by sputtering
75.30.Gw Magnetic anisotropy

Novel design of a resonant photoacoustic spectrophone for elemental carbon mass monitoring

A. Petzold and R. Niessner

Appl. Phys. Lett. 66, 1285 (1995); http://dx.doi.org/10.1063/1.113271 (3 pages) | Cited 11 times

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An improved design of a resonant photoacoustic spectrophone is reported for aerosol absorption measurements by using a near‐infrared laser diode (λ=802 nm; P=450 mW) in combination with a double‐pass configuration for excitation of azimuthal modes and right‐angle mounting of two electret microphones for signal detection. As a result of the new spectrophone setup a small‐sized portable sensor system for real‐time in situ elemental carbon monitoring is presented. The detection limit is estimated to 4.5×10−8 cm−1 or 1.5 μg elemental carbon per m 3. © 1995 American Institute of Physics.
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07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
07.60.-j Optical instruments and equipment
07.88.+y Instruments for environmental pollution measurements
07.75.+h Mass spectrometers

Emission limited injection by thermally assisted tunneling into a trap‐free transport polymer

M. A. Abkowitz, H. A. Mizes, and J. S. Facci

Appl. Phys. Lett. 66, 1288 (1995); http://dx.doi.org/10.1063/1.113272 (3 pages) | Cited 27 times

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We have measured the steady‐state current supported by a variety of contacts on a polytetraphenylbenzidine hole transport polymer. When glassy carbon is used as a hole injecting contact to the polymer, the current is found to exhibit prototypical emission limited behavior. Unique features of the electric field and temperature dependence of the emission limited current cannot be explained by injection theories appropriate to conventional band type semiconductors. A model of thermally assisted tunneling from carriers at the Fermi level of the contact to localized states in the polymer has been formulated. This model is able to critically account for key features in the experimental data. © 1995 American Institute of Physics.
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73.61.Ph Polymers; organic compounds
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Rw Metal-insulator-metal structures
FREE

Comment on ‘‘Crystal structure and optical properties of polymorphic octasilacubane’’ [Appl. Phys. Lett. 64, 2509 (1994)]

K. Furukawa, M. Fujino, and N. Matsumoto

Appl. Phys. Lett. 66, 1291 (1995); http://dx.doi.org/10.1063/1.113273 (1 page) | Cited 5 times

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Abstract Unavailable
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64.70.K- Solid-solid transitions
61.50.Ks Crystallographic aspects of phase transformations; pressure effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
FREE

Response to ‘‘Comment on ‘Crystal structures and optical properties of polymorphic octasilacubane’ ’’ [Appl. Phys. Lett. 66, 1291 (1995)]

H. Tachibana, M. Goto, M. Matsumoto, H. Kishida, and Y. Tokura

Appl. Phys. Lett. 66, 1292 (1995); http://dx.doi.org/10.1063/1.113274 (1 page) | Cited 2 times

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Abstract Unavailable
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64.70.K- Solid-solid transitions
61.50.Ks Crystallographic aspects of phase transformations; pressure effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
FREE

Erratum: ‘‘Effects of strain on boron diffusion in Si and Si1−xGex’’ [Appl. Phys. Lett. 66, 580 (1995)]

P. Kuo, J. L. Hoyt, J. F. Gibbons, J. E. Turner, and D. Lefforge

Appl. Phys. Lett. 66, 1293 (1995); http://dx.doi.org/10.1063/1.114224 (1 page) | Cited 1 time

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Abstract Unavailable
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66.30.J- Diffusion of impurities
61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
99.10.Cd Errata
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