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27 Mar 1995

Volume 66, Issue 13, pp. 1575-1706

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Investigation of β‐BaB2O4 as a Q switch for high power applications

G. D. Goodno, Z. Guo, R. J. D. Miller, I. J. Miller, J. W. Montgomery, S. R. Adhav, and R. S. Adhav

Appl. Phys. Lett. 66, 1575 (1995); http://dx.doi.org/10.1063/1.113675 (3 pages) | Cited 9 times

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A beta barium borate (β‐BaB2O4 or BBO) crystal has been used to electro‐optically Q switch both diode‐pumped and lamp‐pumped Nd:YLF laser systems, resulting in stable, high average power operation. Piezoelectric ringing was found to have negligible effects on the performance of the BBO Pockels cell at repetition rates up to 6 kHz. The high damage threshold and low insertion loss of BBO permitted operation up to average powers in excess of 6 kW/cm2, which makes a BBO Pockels cell well suited for high power, small mode volume operation, such as in diode‐pumped solid state lasers. Based on typical diode‐pumped laser parameters, BBO is expected to extend simple compact Q‐switched operation of diode‐pumped lasers to average powers of 30–100 W. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Ultra‐low‐threshold europium chelate laser in morphology‐dependent resonances

Hiroshi Taniguchi, Humihiro Tomisawa, and Junji Kido

Appl. Phys. Lett. 66, 1578 (1995); http://dx.doi.org/10.1063/1.113857 (3 pages) | Cited 6 times

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We show ultra‐low‐threshold lasing due to morphology‐dependent resonances from an europium (Eu)‐chelate‐doped microdroplet with ∼90 μm diameter. Spectra and spatial images between lasing and nonlasing are exhibited with comparison. Temporal responses are discussed from the viewpoint of the faster (direct) and slower (indirect) transitions in Eu chelates. © 1995 American Institute of Physics.  
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42.55.Mv Dye lasers
42.60.-v Laser optical systems: design and operation

Two‐color Z‐scan technique with enhanced sensitivity

H. Ma and Cid B. de Araújo

Appl. Phys. Lett. 66, 1581 (1995); http://dx.doi.org/10.1063/1.113858 (3 pages) | Cited 9 times

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A procedure to improve the sensitivity of the two‐color Z‐scan technique is presented. The sensitivity of the technique as a function of the pump and the probe beam confocal parameters and their relative transverse dimensions is evaluated. The results show that, in the case of small nonlinear phase shift, the sensitivity of the measurements at the probe beam center may be a factor of 4 greater by the appropriate choice of the beams parameters. Results for arbitrary phase shift values and for detection at or out of the probe beam center are also reported. © 1995 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Confinement and bistability in a tapered hemispherically lensed optical fiber trap

E. R. Lyons and G. J. Sonek

Appl. Phys. Lett. 66, 1584 (1995); http://dx.doi.org/10.1063/1.113859 (3 pages) | Cited 24 times

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We describe the operation and performance of a dual fiber optical trap created using tapered lensed optical fibers pigtailed to 1300 nm laser diodes. Single‐mode fibers, having mode field diameters of ∼9.5 μm, and separated by up to 350 μm, are used to demonstrate dielectric particle confinement over two orders of magnitude in fiber trapping power ratio. Axial and transverse trap efficiencies, as well as the existence of bistable trapping positions, are predicted and experimentally confirmed. The use of fiber lenses results in the creation of an optical trap that provides strong transverse optical confinement and which is nearly insensitive to the fiber polarization state. © 1995 American Institute of Physics.
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42.62.-b Laser applications
07.60.Vg Fiber-optic instruments
42.81.Wg Other fiber-optical devices
87.80.-y Biophysical techniques (research methods)

Irradiation system based on dodecahedron for inertial confinement fusion

M. Murakami

Appl. Phys. Lett. 66, 1587 (1995); http://dx.doi.org/10.1063/1.113860 (3 pages) | Cited 15 times

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Two different types of irradiation systems based on dodecahedral configuration are proposed for 60, 72, 80, and 92 beams. By optimizing the system, it is expected that enough uniformity (≤1% rms) is provided. Furthermore, it is quantitatively discussed that the number of beams, power imbalance, and the beam pattern must be improved synchronously for a high illumination uniformity. © 1995 American Institute of Physics.
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52.57.-z Laser inertial confinement
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Demonstration of the independence of absorptive all‐optical bistabilities in reflection and luminescence

B. Ullrich, A. Kazlauskas, and T. Kobayashi

Appl. Phys. Lett. 66, 1590 (1995); http://dx.doi.org/10.1063/1.113861 (3 pages) | Cited 5 times

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The dependence on the source location of photothermal bistabilities of a thin CdS:Cu film is demonstrated by the investigation of bistability in luminescence in reflection geometry. Particularly, it is shown that the infrared portion in the reflected beam clearly exhibits contrasting bistable loops in contrast to the reflection itself. The unexpected effect is explained by the fact that bistability in luminescence is a bulk feature which is not affected by the surface region. © 1995 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors

Reduced angular dependence for degenerate four‐wave mixing in potassium vapor by including nitrogen buffer gas

D. S. Glassner and R. J. Knize

Appl. Phys. Lett. 66, 1593 (1995); http://dx.doi.org/10.1063/1.113862 (3 pages) | Cited 1 time

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Degenerate four‐wave mixing in alkali vapors exhibits a strong dependence on the angle between the forward pump and probe beams, due to atomic motion. We show that this angular dependence is dramatically decreased by including several hundred Torr of N2 buffer gas in a potassium vapor cell. The angle at which the signal has decreased by half is 250 mrad, an improvement of over 50 times the angle for potassium vapor without buffer gases. © 1995 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
32.80.-t Photoionization and excitation

Optical gain due to excitonic transitions in ZnCdSe/ZnMgSSe strained layer quantum well blue–green lasers: Prediction of low threshold under tensile strain

W. Huang and F. C. Jain

Appl. Phys. Lett. 66, 1596 (1995); http://dx.doi.org/10.1063/1.113863 (3 pages) | Cited 8 times

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Gain coefficient of excitonic transitions is calculated for unstrained as well as strained ZnCdSe/ZnMgSSe multiple quantum well (MQW) lasers as a function of operating wavelength and injection current. Unlike the III–V strained layer quantum well lasers, the gain coefficient due to excitonic transitions is significantly higher in II–VI systems as the exciton binding energy is more than 5 times larger. This results in a primary role for excitons in lasing which has been verified experimentally. Strain induced changes in energy band gaps and effective masses of light and heavy holes are included in the gain and threshold current density calculations, which are in agreement with experimental data available for compressive strained layers grown on GaAs substrates. Significantly low threshold current density of about 180 A/cm2 are predicted for the tensile strained ZnCdSe–ZnMgSSe and ZnCdSe–ZnSeTe quantum well lasers using InP substrates. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Hf II-VI semiconductors

Transient pulse response of In0.2Ga0.8As/GaAs microcavity lasers

P. Michler, A. Lohner, W. W. Rühle, and G. Reiner

Appl. Phys. Lett. 66, 1599 (1995); http://dx.doi.org/10.1063/1.113864 (3 pages) | Cited 23 times

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We investigate the transient emission of two In0.2Ga0.8As/GaAs microcavity laser samples with one and three quantum wells at 20 K following femtosecond optical excitation. The stimulated emission time is faster when the cavity resonance is tuned to shorter wavelengths within the gain spectrum of the quantum well. A larger number of quantum wells makes the dynamical response faster also. The narrowest pulse width observed is 6.8 ps, and the shortest rise time is 1 ps. © 1995 American Institute of Physics.  
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics

Pulse modulated electron cyclotron resonance plasma for chemical vapor deposition of diamond films

A. Hatta, K. Kadota, Y. Mori, T. Ito, T. Sasaki, A. Hiraki, and S. Okada

Appl. Phys. Lett. 66, 1602 (1995); http://dx.doi.org/10.1063/1.113865 (3 pages) | Cited 19 times

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Pulse operation of electron cyclotron resonance plasma was performed for the fabrication of diamond films by chemical vapor deposition. With square wave amplitude modulation of microwaves at 500 Hz in frequency, the growth rate became twice as large as one of continuous operation with the same microwave power. Time resolved measurement of the optical emission from the pulse modulated plasma was also carried out. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

X‐ray characterization of extremely high quality (Sr,Ba)TiO3 films grown by pulsed laser deposition

S. B. Qadri, J. S. Horwitz, D. B. Chrisey, R. C. Y. Auyeung, and K. S. Grabowski

Appl. Phys. Lett. 66, 1605 (1995); http://dx.doi.org/10.1063/1.113866 (3 pages) | Cited 20 times

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Thin films of Sr0.5Ba0.5TiO3 have been grown on MgO (100), SrTiO3 (100), and LaAlO3 (012) substrates using pulsed laser deposition. These films were characterized by a variety of x‐ray diffraction techniques. Deposited films exhibited true single crystal morphology. X‐ray rocking curves for the (002) reflection as measured by double and triple crystal spectrometers showed unusually narrow full width at half‐maximum (FWHM) values of 72 arcsec for films grown on LaAlO3, and 140 arcsec for films deposited onto SrTiO3. The FWHM for films deposited on MgO were significantly broader (∼2500 arcsec). While the quality of the epitaxial films is related to the lattice mismatch between the film and the substrate, extremely well aligned films can be grown on substrates with a relatively large lattice mismatch.
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81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films

Hydrothermal epitaxy of highly oriented TiO2 thin films on silicon

Qianwang Chen, Yitai Qian, Zuyao Chen, Wenbin Wu, Zhiwen Chen, Guien Zhou, and Yuheng Zhang

Appl. Phys. Lett. 66, 1608 (1995); http://dx.doi.org/10.1063/1.113867 (3 pages) | Cited 13 times

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Highly oriented thin films (0.15 μm) of titania on Si (100) substrates have been prepared first by hydrothermal treatment of TiO42− solution (0.6–1.2M) at relatively low temperatures. Films made at 100–200 °C contain only the anatase phase with (112) orientation, adhere well to the substrates. The hydrothermal temperature, time, and the pH value of TiO42− solution are the critical parameters determining the formation of films. © 1995 American Institute of Physics.  
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Processing and properties of Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films by pulsed laser deposition

C. Tantigate, J. Lee, and A. Safari

Appl. Phys. Lett. 66, 1611 (1995); http://dx.doi.org/10.1063/1.113868 (3 pages) | Cited 57 times

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In situ thin films of (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3, (PMN‐PT), with composition x=0.1, 0.3, 0.35, and 0.4, were deposited on MgO(100) substrates by pulsed laser deposition. The optimum conditions to form (100) oriented PMN‐PT perovskite phase were at substrate temperatures in the range of 535 to 575 °C with an oxygen pressure of 200 mTorr. The Mg content in PMN‐PT films was found to be essential to the formation of perovskite phase. Heterostructures of PMN‐PT/La0.5Sr0.5CoO3 (LSCO) films were prepared on MgO(100) substrates to evaluate the dielectric properties of the films. The dielectric constant of PMN and PMN‐PT films ranged from 1000 to 3800 at 10 kHz measured at room temperature. The highest dielectric constant was obtained from PMN films with 99% perovskite phase. © 1995 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
77.22.Ch Permittivity (dielectric function)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Large‐area, single‐transverse‐mode semiconductor laser with diffraction‐limited super‐Gaussian output

Greg Mowry and James R. Leger

Appl. Phys. Lett. 66, 1614 (1995); http://dx.doi.org/10.1063/1.113869 (3 pages) | Cited 4 times

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An external cavity semiconductor laser that incorporates a large‐area amplifier has been successfully stabilized into a single transverse mode over the 600 μm width of the amplifier. Single‐transverse‐mode operation is achieved by using the combination of a diffractive mode‐selecting mirror and an aperture. 2.8 W of stable diffraction‐limited output power is achieved. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Performance capabilities of reflectometers and ellipsometers for compositional analysis during AlxGa1−xAs epitaxy

W. Gilmore and D. E. Aspnes

Appl. Phys. Lett. 66, 1617 (1995); http://dx.doi.org/10.1063/1.113870 (3 pages) | Cited 2 times

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Performance capabilities of reflectometers and ellipsometers for determining near‐surface dielectric properties by virtual‐interface analysis of kinetic data are calculated for the prototypical semiconductor alloy Al0.30Ga0.70As. Measurement of phase as well as amplitude improves relative sensitivities by over an order of magnitude. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors

Surface migration induced self‐aligned InAs islands grown by molecular beam epitaxy

D. S. L. Mui, D. Leonard, L. A. Coldren, and P. M. Petroff

Appl. Phys. Lett. 66, 1620 (1995); http://dx.doi.org/10.1063/1.113871 (3 pages) | Cited 103 times

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We utilize the sensitivity of the two‐ to three‐dimensional growth transition of InAs self‐assembled islands on InAs coverage to demonstrate the growth of self‐aligned InAs islands on etched GaAs ridges by molecular beam epitaxy. The different migration behavior of In adatoms on different crystal planes of etched ridges is used to spatially modulate the supply of In adatoms. The ridges are oriented either along the [011] and [011] direction on (100) substrates with grating spacing of 0.28, 1, and 5 μm. Atomic force microscopy reveals that the InAs islands are self‐aligned along the ridges and they have a typical size of 400 Å in diameter and 120 Å in height. In samples with [011] oriented ridges, the islands are located on the sidewalls. On the other hand, for [011] oriented ridges the islands are on the (100) planes on and at the foot of the mesa. On samples with a grating pitch of 0.28 μm, all the islands are located either on the sidewalls or at the bottom of the ‘‘V groove’’ for both grating orientations. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Effects of a magnetic field on hot electron transport in quantum wires

N. Telang and S. Bandyopadhyay

Appl. Phys. Lett. 66, 1623 (1995); http://dx.doi.org/10.1063/1.113872 (3 pages) | Cited 8 times

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We have performed Monte Carlo simulation of electron magnetotransport in a GaAs quantum wire at 77 and 300 K. At sufficiently high electric fields, a magnetic field was found to enhance the electron drift velocity significantly by preferentially suppressing backscattering events. Moreover, the field also decreases the electron temperature (suppressing it well below the lattice temperature at 300 K over a wide range of electric field) which reduces Johnson noise. Surprisingly, the electron temperature is lower at a lattice temperature of 300 K than at a lattice temperature of 77 K when a magnetic field is present. All of these have important implications for the transconductance, unity gain frequency and noise margin of quasi‐one‐dimensional electronic devices such as quantum wire field effect transistors. © 1995 American Institute of Physics.
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72.20.Dp General theory, scattering mechanisms
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.20.Ht High-field and nonlinear effects
72.20.My Galvanomagnetic and other magnetotransport effects

In situ observation of phase transition and the transition‐induced step bunching on InAs(001) surfaces by scanning electron microscopy

Hiroshi Yamaguchi, Yoshikazu Homma, and Yoshiji Horikoshi

Appl. Phys. Lett. 66, 1626 (1995); http://dx.doi.org/10.1063/1.113873 (3 pages) | Cited 3 times

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The reconstruction and the step structure change during the phase transition on an InAs(001) surface under As pressure is observed directly by using scanning electron microscopy. The domain formation corresponding to the first‐order phase transition is clearly seen as predicted by Monte Carlo simulation with a lattice gas model. It is also seen that the step structure largely depends on the surface reconstruction and the misorientation direction. This gives the first observation of phase‐transition‐induced step bunching on a compound semiconductor surface. © 1995 American Institute of Physics.
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68.35.Rh Phase transitions and critical phenomena
68.35.B- Structure of clean surfaces (and surface reconstruction)

Generation of ultrashort electrical pulses with variable pulse widths

U. D. Keil, H. J. Gerritsen, J. E. M. Haverkort, and J. H. Wolter

Appl. Phys. Lett. 66, 1629 (1995); http://dx.doi.org/10.1063/1.113874 (3 pages) | Cited 11 times

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Electrical pulses from 450 fs to 3 ps are generated using coplanar strip lines and coplanar waveguides on SI GaAs substrate. We use two optical pump beams to generate two steplike electrical transients with opposite sign and then superimpose the signals resulting in rectangular shaped pulses. By varying the delay between the two pump beams the pulse width can be adjusted. © 1995 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
72.40.+w Photoconduction and photovoltaic effects
84.40.Az Waveguides, transmission lines, striplines

Electrical and structural properties of InxGa1−xN on GaAs

C. R. Abernathy, J. D. MacKenzie, S. R. Bharatan, K. S. Jones, and S. J. Pearton

Appl. Phys. Lett. 66, 1632 (1995); http://dx.doi.org/10.1063/1.113875 (3 pages) | Cited 21 times

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InxGa1−xN (x=0.07–1.0) layers were grown on GaAs substrates by metalorganic molecular beam epitaxy. The films display strong n‐type conductivity (n≳1020 cm−3) for a wide range of compositions. The use of an H2 rather than a He carrier gas produces a lower carrier concentration in the as‐grown material. The InxGa1−xN is single crystal at low Ga concentrations with the lattice mismatch accommodated by a high density of stacking faults and microtwins. The InN layers contain only the cubic phase, while the ternaries contain both cubic and hexagonal phases.
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68.55.-a Thin film structure and morphology

Optical properties of CdTe/CdZnTe wires and dots fabricated by a final anodic oxidation etching

C. Gourgon, Le Si Dang, H. Mariette, C. Vieu, and F. Muller

Appl. Phys. Lett. 66, 1635 (1995); http://dx.doi.org/10.1063/1.113876 (3 pages) | Cited 10 times

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A two step etching process has been used to fabricate wire and dot nanostructures from CdTe/CdZnTe quantum wells with high optical qualities. Wires and dots are first etched by the usual process of electron beam lithography and ion beam etching then, anodic oxidation is used to etch nanostructures to their final lateral sizes. We have observed remarkable improvements in the optical properties of these nanostructures as compared to the single step etching process. Their photoluminescence spectra are similar to that of the reference quantum well, with an exciton linewidth of about 3 meV, even for the smallest wires (100 nm) and dots (250 nm) which were studied. © 1995 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.65.-b Surface treatments
78.66.Hf II-VI semiconductors

Determining effective dielectric thicknesses of metal‐oxide‐semiconductor structures in accumulation mode

C.‐Y. Hu, D. L. Kencke, S. Banerjee, B. Bandyopadhyay, E. Ibok, and S. Garg

Appl. Phys. Lett. 66, 1638 (1995); http://dx.doi.org/10.1063/1.113877 (3 pages) | Cited 11 times

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Metal‐oxide‐semiconductor (MOS) capacitance–voltage (C–V) characteristics in the accumulation mode have been measured and simulated for polycrystalline Si gate MOS capacitors with various oxide thicknesses (40–200 Å) on p‐type (100) Si substrates. The discrepancy between experimental data and theoretical prediction by classical MOS theories is clarified by taking quantization effects into account. The experimentally determined ‘‘effective dielectric thicknesses’’ in the semiconductors are found to be in good agreement with the values calculated from quantization effects for MOS capacitors with thinner oxides (<80 Å). The effective dielectric thicknesses at oxide electric fields of 2–6 MV/cm have been determined to be 2–3 Å larger for the quantum mechanical case than for the classical case.
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85.30.De Semiconductor-device characterization, design, and modeling
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Transient current spectroscopy of deep levels in semi‐insulating polycrystalline silicon

S. Lombardo and S. U. Campisano

Appl. Phys. Lett. 66, 1641 (1995); http://dx.doi.org/10.1063/1.113878 (3 pages)

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Poole–Frenkel emission by transient current measurements in semi‐insulating polycrystalline silicon containing 35 at. % O has been investigated. In the presence of intense electric fields the conductivity of the material is strongly enhanced by the emission of free carriers. By applying square wave voltage signals, the field strength is modulated, thus producing current transients. By the analysis of these transients we have measured the emissivity of the traps responsible for the Poole–Frenkel effect as a function of temperature. The emissivity shows an activated behavior and the corresponding binding energy of the trap results equal to ≊0.64 eV. © 1995 American Institute of Physics.
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73.61.Ng Insulators
71.55.Ht Other nonmetals
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Cyclic shifts in the photoluminescence spectra of the porous Si in HF

T. Ichinohe, S. Nozaki, H. Ono, and H. Morisaki

Appl. Phys. Lett. 66, 1644 (1995); http://dx.doi.org/10.1063/1.113879 (3 pages) | Cited 6 times

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Photoluminescence (PL) measurements were carried out on the porous Si layers kept in the HF solution. The PL peak around 700 nm, usually observed in the PL spectrum of the porous Si layer in the air, was no longer detected. This evidence suggests that the origin of the visible light luminescence from the porous Si layer in the air is different from that in the HF solution and may be associated with the presence of oxygen at the surface. Furthermore, it is interesting to find the cyclic shifts in the PL spectra between green and orange by turning the light on and off to illuminate the porous Si layer in the HF solution. This unique behavior is attributed to photochemical etching under illumination and chemical etching of the porous Si layer in the dark. © 1995 American Institute of Physics.  
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78.55.Hx Other solid inorganic materials
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

Hydrogen effusion from evaporated Si1−xSnx:H (0≤x≤0.2) amorphous semiconductors

M. Vergnat, N. Hadj Zoubir, S. Houssaïni, and G. Marchal

Appl. Phys. Lett. 66, 1647 (1995); http://dx.doi.org/10.1063/1.113880 (3 pages) | Cited 3 times

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The release of hydrogen from Si1−xSnx:H (0≤x≤0.2) amorphous semiconductors prepared by reactive evaporation on substrates maintained at 77 K is monitored by effusion experiments. The effusion peaks are associated with desorption from voids. The deconvolution of these peaks allows one to deduce the different atomic configurations containing hydrogen and to determine their stability and their Gibbs free energy of desorption. © 1995 American Institute of Physics.
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66.30.J- Diffusion of impurities
68.60.Dv Thermal stability; thermal effects
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