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3 Apr 1995

Volume 66, Issue 14, pp. 1715-1850

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Use of a laser beam interference technique for the determination of the minority carrier diffusion length in layers of a p‐n junction

D. Levy and K. Weiser

Appl. Phys. Lett. 66, 1788 (1995); http://dx.doi.org/10.1063/1.113322 (3 pages) | Cited 2 times

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A new technique is reported for measuring the diffusion length of minority carriers in a layer of a p‐n junction. The technique consists of illuminating a sample with a sinusoidally varying illumination pattern produced by two interfering laser beams and measuring the corresponding photovoltage along the plane of the sample. The diffusion length is obtained from the dependence of the voltage on the fringe distance. © 1995 American Institute of Physics.
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73.40.Ei Rectification
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Pz Photoconduction and photovoltaic effects

Uniform and delta doping of carbon in GaAs by solid‐source molecular beam epitaxy using electron beam evaporation: Evidence for atomic pairing

D. L. Sato, F. J. Szalkowski, and H. P. Lee

Appl. Phys. Lett. 66, 1791 (1995); http://dx.doi.org/10.1063/1.113323 (3 pages) | Cited 6 times

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Uniform and delta‐doped GaAs:C layers were grown by solid source molecular beam epitaxy (MBE) using electron‐beam evaporation of the dopant. Uniform doping concentrations of up to 6×1019 cm−3 were measured and degradation of optical properties was noted when the hole concentration exceeded the mid‐1018 cm−3 range. Delta‐doping studies were carried out under various deposition conditions and an extremely high sheet carrier concentration of 9.6×1012 cm−2 was obtained under modulated beam condition. In contrast to carbon doping by resistively heated filament sources, all doping results were obtained with C1/C3 isomer ratios greater than unity. These findings show strong evidence for the identification of atomic carbon pairing as the dominant defect formation mechanism in heavily doped GaAs:C films prepared by solid source MBE. © 1995 American Institute of Physics.  
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.uj III-V and II-VI semiconductors

Photocurrent polarization in long‐range ordered Ga0.5In0.5P

Takashi Kita, Akira Fujiwara, Hiroshi Nakayama, and Taneo Nishino

Appl. Phys. Lett. 66, 1794 (1995); http://dx.doi.org/10.1063/1.113324 (3 pages) | Cited 10 times

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Photocurrent polarization properties near the band gap of long‐range ordered Ga0.5In0.5P have been investigated. The linearly polarized PC spectra of the ordered Ga0.5In0.5P show an absorption anisotropy for the [110] and [110] directions together with a large band‐gap reduction. The anistotropy in the PC spectra is due to a crystal‐field splitting at the valence‐band maximum in ordered Ga0.5In0.5P. The PC edge of the [110] polarization is lower at about 10 meV than one of the [110]. The polarization spectra defined by (I110−I110)/(I110+I110), where I110 and I110 are the PC signal intensities measured at the [110] and [110], respectively, show a single broad peak. The maximum polarization reaches about 50% at the energy of the transition between Γ6c and Γ4v, Γ5v. With increased sample temperature, the polarization maximum shifts to the lower energy side according to the change of the Γ6c‐Γ4v,Γ5v transition energy. Even at room temperature, a clear polarization signal was observed. © 1995 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
78.66.Fd III-V semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Appearance of vertical dihydrides on a silicon surface while dissolving the surface oxide layer in hot water

Satoru Watanabe and Yoshihiro Sugita

Appl. Phys. Lett. 66, 1797 (1995); http://dx.doi.org/10.1063/1.113325 (3 pages) | Cited 15 times

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Removal of surface oxides from a partially oxidized Si(111) surface, and simultaneous termination of the new dangling bonds by hydrogen in hot water with a 0.004 ppm concentration of dissolved oxygen, was observed. During removal for up to 60 min, vertical dihydrides at step edges appeared on the hydrogen‐terminated surface. From observing selective removal of vertical dihydrides from an oxygen‐free hydrogen‐terminated surface, the appearance of vertical dihydrides at step edges shows the existence of the dihydride creation reaction, while the oxides are dissolved in water. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Arsenic segregation and passivation in the heteroepitaxy of Ge/GaAs

André Leycuras

Appl. Phys. Lett. 66, 1800 (1995); http://dx.doi.org/10.1063/1.113326 (3 pages) | Cited 4 times

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During the epitaxy of Ge, the arsenic introduced for doping is known to be partially incorporated into the layer and partially segregated at the Ge free surface. Arsenic at the (001) surface can saturate the Ge dangling bonds and the growth rate should decrease accordingly. An in situ monitoring of the chemical vapor deposition of Ge by laser reflectometry, and its theoretical simulation, give the morphology and the growth rate as a function of time (and thickness) and hence the segregation rate of As. The variation of the growth rate versus the AsH3/GeH4 flow rate ratio shows the formation of As2 dimers. Under constant temperature and constant AsH3/GeH4 flow rates, the growth rate first decreases, showing the segregation of As at the Ge(001) surface, then remains stable and finally increases, due to a change in the surface morphology exhibiting high order crystallographic planes on which no As2 dimers can stay. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
66.30.J- Diffusion of impurities

Superlattice‐equivalent (In,Ga)As/(In,Al)As quantum wells with large Stark shifts in the 1.3‐μm spectral region

R. P. Leavitt, J. L. Bradshaw, and J. T. Pham

Appl. Phys. Lett. 66, 1803 (1995); http://dx.doi.org/10.1063/1.113327 (3 pages) | Cited 2 times

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We have measured room‐temperature photocurrent spectra of p‐i‐n diode structures containing multiple superlattice‐equivalent quantum wells wherein each quantum well consists of a few periods of a fine‐period (In,Ga)As/(In,Al)As superlattice. Both the absolute exciton absorption energies and the Stark shifts are in excellent agreement with calculations, which predict a larger Stark shift for this structure than for a quaternary quantum well with the same width and absorption edge. Calculated electric‐field‐induced changes in the real and imaginary parts of the refractive index show that these structures are promising candidates for semiconductor intensity and phase modulators for wavelengths around 1.3 μm.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors

Spatial confinement effects on type II quantum well intersubband transitions

Lung‐Han Peng and Clifton G. Fonstad

Appl. Phys. Lett. 66, 1806 (1995); http://dx.doi.org/10.1063/1.113328 (3 pages) | Cited 1 time

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A study is made of the polarization dependence of intersubband transitions in n+ InP/InAlAs type II quantum wells (QWs), and it is shown that the type II nature of the valence bands and heavy electron band in these QWs is reflected in the spectra. Specifically it is found that the lack of spatial confinement to the QW in the Γ15v valence bands and higher conduction band in InP/InAlAs quantum wells (i) eliminates the coupling between Γc1 conduction subbands and heavy holes and electrons, and (ii) diminishes the normal‐incidence intersubband activity in type II QWs, in accordance with the predictions of a recently published 14‐band k⋅p analysis of quantum well subband levels. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors

Polycrystalline silicon–germanium films on oxide using plasma‐enhanced very‐low‐pressure chemical vapor deposition

Julie A. Tsai and Rafael Reif

Appl. Phys. Lett. 66, 1809 (1995); http://dx.doi.org/10.1063/1.113329 (3 pages) | Cited 9 times

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Si1−xGex thin films on oxide‐coated Si substrates have been formed by plasma‐enhanced very‐low‐pressure chemical vapor deposition. Two modes of deposition, thermal and plasma enhanced, were studied using SiH4 and GeH4 at temperatures ≤600 °C. In both cases, growth rates and grain sizes increase with Ge content, and the polycrystalline‐to‐amorphous transition temperature is lower for Si1−xGex than Si. Compared to thermal growth of polycrystalline Si1−xGex, plasma‐enhanced deposition of poly‐Si1−xGex promotes higher growth rates, smaller grain sizes, and direct deposition onto oxide, as well as improved structural properties such as a smoother surface and a more columnar grain texture. Plasma deposition of amorphous‐Si1−xGex films followed by a crystallization anneal at 600 °C results in an even smoother surface morphology with grain sizes enhanced by an order of magnitude compared to plasma‐deposited poly‐Si1−xGex films. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Genetic algorithms: A new approach to energy balance equations

J. Jakumeit

Appl. Phys. Lett. 66, 1812 (1995); http://dx.doi.org/10.1063/1.113330 (3 pages) | Cited 3 times

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The observation of nonclassical conductivity in n‐Hg0.8Cd0.2Te gives the possibility to investigate the hot electron transport in the absence of magnetic fields at temperatures around 4.2 K. Based on calculations of the electron phonon scattering rates, a comparison of the predictions of the standard electron temperature model with the experimental data revealed a large discrepancy. By means of a genetic algorithm energy distribution functions have been calculated which describe the experimental results correctly. This application of genetic algorithms to solve a energy balance equation demonstrates that genetic algorthims are a promising tool to compare general theoretical methods with experimental data, without further theoretical assumptions or simplifications. © 1995 American Institute of Physics.
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72.10.-d Theory of electronic transport; scattering mechanisms
72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors

Photoluminescence efficiency study of wet chemically etched CdTe/Cd1−xMgxTe wires

M. Illing, G. Bacher, A. Forchel, T. Litz, A. Waag, and G. Landwehr

Appl. Phys. Lett. 66, 1815 (1995); http://dx.doi.org/10.1063/1.113331 (3 pages) | Cited 7 times

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Optically active semiconductor wires with lateral extensions between 60 nm and 5 μm based on CdTe/Cd1−xMgxTe quantum well structures have been fabricated by electron beam lithography and subsequent pattern transfer using a wet chemical etching process. Changes of the relative photoluminescence efficiency have been studied by photoluminescence spectroscopy as a function of the wire widths. For narrow wires nonradiative recombination at the wire sidewalls becomes the major recombination mechanism, strongly decreasing the photoluminescence efficiency. We discuss the influence of the exciton diffusion on the photoluminescence efficiency by investigating the wire width dependence of the photoluminescence intensity as a function of temperature and quantum well thickness. High photoluminescence efficiencies are obtained in the case of small diffusion lengths as for example at low temperatures and narrow quantum wells. © 1995 American Institute of Physics.
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78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Etching of Si(111)‐(7×7) and Si(100)‐(2×1) surfaces by atomic hydrogen

Yi Wei, Lian Li, and I. S. T. Tsong

Appl. Phys. Lett. 66, 1818 (1995); http://dx.doi.org/10.1063/1.113332 (3 pages) | Cited 36 times

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We present scanning tunneling microscopy (STM) studies of the etching behavior of the surfaces of Si(111)‐(7×7) and Si(100)‐(2×1) by atomic hydrogen. Etching proceeds via the formation of volatile SiH4 through a two‐step mechanism in which the H atoms react with SiH2 and SiH3 species on the surface at room temperature. By measuring the area of etch pits in the STM images taken under the same flux conditions, the etching of Si(100) is determined to be nearly three times faster than that of Si(111) because intermediate hydride products are more readily stabilized on the (100) surface. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)

Femtosecond carrier dynamics in low‐temperature‐grown indium phosphide

Y. Kostoulas, L. J. Waxer, I. A. Walmsley, G. W. Wicks, and P. M. Fauchet

Appl. Phys. Lett. 66, 1821 (1995); http://dx.doi.org/10.1063/1.113333 (3 pages) | Cited 17 times

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Up‐conversion luminescence and pump‐probe spectroscopy are used to determine the energy distribution and recombination kinetics of photoexcited carriers in low‐temperature‐grown InP. The samples used are two unannealed InP films grown at 200 and 300 °C. The photoexcited carriers undergo fast trapping in less than 1 ps with recombination taking place on a much longer time scale. The carrier trapping time is found to be 500±100 fs for the 200 °C sample and 1.6±0.05 ps for the 300 °C sample and the trap photoionization cross section is estimated to be 10−16 cm2. © 1995 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Fabrication of all in‐plane oriented a‐axis YBa2Cu3O7−x/ insulator/ YBa2Cu3O7−x heterostructures

I. Takeuchi, Z. Trajanovic, J. L. Peng, Z. Y. Li, P. A. Warburton, C. J. Lobb, and T. Venkatesan

Appl. Phys. Lett. 66, 1824 (1995); http://dx.doi.org/10.1063/1.113334 (3 pages) | Cited 5 times

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In‐plane oriented a‐axis heteroepitaxial multilayers consisting of YBa2Cu3O7−x/PrBa2Cu3O7−y bilayers and insulating LaSrGaO4 and Nd2CuO4 on (100) LaSrGaO4 substrates have been fabricated. ϕ‐scan measurements of reflections from (101) Nd2CuO4 and (102) YBa2Cu3O7−x planes display twofold symmetry, indicating in‐plane oriented growth of the top and middle layers in superconductor‐insulator‐superconductor structures for an insulating barrier thickness of 3000 Å. For structures with a Nd2CuO4 barrier, both top and bottom layers had Tc(R=0)≥85 K. © 1995 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Fg Pulsed laser ablation deposition
74.78.-w Superconducting films and low-dimensional structures
74.78.Fk Multilayers, superlattices, heterostructures

Very low level residual resistivity in silver‐sheathed (Bi,Pb)2Sr2Ca2Cu3O10 tapes

Y. Fukumoto, Q. Li, Y. L. Wang, M. Suenaga, and P. Haldar

Appl. Phys. Lett. 66, 1827 (1995); http://dx.doi.org/10.1063/1.113335 (3 pages) | Cited 9 times

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Detailed measurements of voltage–current (E–J) characteristics have revealed a distinct low level resistive tail for silver‐sheathed (Bi,Pb)2Sr2Ca2Cu3O10 superconducting tapes. The residual tail is observed at very low voltage (E≤10−8–10−7 V/cm) of the E–J curves and can be described by E∝(J−Jc′)n, where Jc′ is a field and temperature dependent critical current and n=1.0–1.2. The dynamic resistivity is, typically, in the range of 10−13 Ω cm, but could be as high as 10−11 Ω cm in some specimens. This residual resistance can be induced by a severe thermal cycling treatment, although it may also be intrinsic, i.e., as‐grown, to some of the specimens. © 1995 American Institute of Physics.
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84.71.Mn Superconducting wires, fibers, and tapes
74.25.Sv Critical currents
74.72.-h Cuprate superconductors

Direct high‐resolution electron microscopy observation of nonunit‐cell nucleation in the initial stage of high‐Tc superconducting film growth

J. G. Wen, T. Morishita, N. Koshizuka, C. Traeholt, and H. W. Zandbergen

Appl. Phys. Lett. 66, 1830 (1995); http://dx.doi.org/10.1063/1.113336 (3 pages) | Cited 19 times

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The relationship between the starting and ending atomic layers of YBa2Cu3O7−x and Bi2Sr2CaCu2O8 thin films is studied by high‐resolution electron microscopy. Experimental results show that the starting atomic layer of the thin film is determined by surface chemistry and the interaction between the thin film and the substrate, while the ending layer of the thin film is thermodynamically determined by the high‐Tc cuprate itself. Therefore, nonunit cell nucleation is often observed in certain cases. The surface atomic layers of YBa2Cu3O7−x and Bi2Sr2CaCu2O8 were found to be the CuO layer and single BiO layer, respectively. © 1995 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
68.55.-a Thin film structure and morphology

Fast thermoelectric response of normal state YBa2Cu3O7−δ films

S. Zeuner, W. Prettl, and H. Lengfellner

Appl. Phys. Lett. 66, 1833 (1995); http://dx.doi.org/10.1063/1.113337 (3 pages) | Cited 27 times

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Normal state YBa2Cu3O7−δ films, epitaxially grown ‘‘off‐c axis’’ with tilt angles up to 20° are shown to be fast thermoelectric detectors for radiation from UV to far infrared wavelengths. Upon radiation heating of the tilted films a thermoelectric voltage arises due to the anisotropy of the thermopower in YBa2Cu3O7−δ. The response time is limited by the decaying temperature gradient and thus by heat diffusion. For thin films we have measured a response time from ≲1 ns in the UV to ∼5 ns in the far infrared. Because of the wavelength dependent reflectivity, the responsivity of the films varies between 0.5 V/MW and 20 V/MW. Thus, thin tilted YBa2Cu3O7−δ films can be used as fast room temperature detectors over a wide spectral range. © 1995 American Institute of Physics.
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73.50.Lw Thermoelectric effects
74.25.N- Response to electromagnetic fields
74.78.-w Superconducting films and low-dimensional structures
85.80.Fi Thermoelectric devices

Quantitative analysis of growth‐induced reduction of long range lattice order in ion‐beam sputtered YBa2Cu3O6.9 films

Andrea Gauzzi and Davor Pavuna

Appl. Phys. Lett. 66, 1836 (1995); http://dx.doi.org/10.1063/1.113338 (3 pages) | Cited 22 times

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We report evidence for the reduction of long range lattice order caused by slight departures from the optimal growth temperature in fully doped (x≊0.9) YBa2Cu3O6+x films deposited by ion‐beam sputtering on 〈001〉 SrTiO3. We estimate the characteristic length of this disorder from the broadening Δϑ of the 〈005〉 x‐ray diffraction rocking curve. The depression of superconductivity and normal conductivity scales as Δϑ and disappears when the in‐plane lattice coherence length rc∼1/Δϑ is larger than ≊10 nm. © 1995 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering

Perpendicular giant magnetoresistance of Co/Cu multilayers deposited under an angle on grooved substrates

M. A. M. Gijs, M. T. Johnson, A. Reinders, P. E. Huisman, R. J. M. van de Veerdonk, S. K. J. Lenczowski, and R. M. J. van Gansewinkel

Appl. Phys. Lett. 66, 1839 (1995); http://dx.doi.org/10.1063/1.113339 (3 pages) | Cited 36 times

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We propose a novel experimental technique for investigating the giant magnetoresistance effect measured with the current perpendicular to the layer plane (the so‐called CPP geometry). Using holographic laser interference nanofabrication techniques and anisotropic etching the surface of semi‐insulating InP substrates is patterned into V‐shaped grooves of 0.2 μm width. Subsequently, a magnetic multilayer can be evaporated under an angle with the substrate normal, naturally resulting in a CPP‐like magnetoresistance configuration. The technique is illustrated for Co/Cu multilayers, for which we present magnetization and magnetoresistance experiments. © 1995 American Institute of Physics.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
72.15.Gd Galvanomagnetic and other magnetotransport effects

Piezoelectric tip‐sample distance control for near field optical microscopes

Khaled Karrai and Robert D. Grober

Appl. Phys. Lett. 66, 1842 (1995); http://dx.doi.org/10.1063/1.113340 (3 pages) | Cited 450 times

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An aluminum coated tapered optical fiber is rigidly attached to one of the prongs of a high Q piezoelectric tuning fork. The fork is mechanically dithered at its resonance frequency (33 kHz) so that the tip amplitude does not exceed 0.4 nm. A corresponding piezoelectric signal is measured on electrodes appropriately placed on the prongs. As the tip approaches within 20 nm above the sample surface a 0.1 nN drag force acting on the tip causes the signal to reduce. This signal is used to position the optical fiber tip to about 0 to 25 nm above the sample. Shear forces resulting from the tip‐sample interaction can be quantitatively deduced. © 1995 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Nonlinear theory of large‐signal mode locking in a gyrotron oscillator

A. H. McCurdy

Appl. Phys. Lett. 66, 1845 (1995); http://dx.doi.org/10.1063/1.113341 (3 pages) | Cited 1 time

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Nonlinear, time‐dependent calculations have been carried out for closed‐cavity gyrotron oscillations using a strongly modulated electron beam. It is found that radiation pulses of width 200 ps can be generated with carrier frequency of 18 GHz at over 10% efficiency. The gyrotron features a tapered wall radius to allow an equidistant spectrum of cavity modes. Evidence of a disruption in locking is found at electron beam currents several times the start oscillation value. © 1995 American Institute of Physics.
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84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)
41.60.Cr Free-electron lasers

Early dynamics of laser‐ablated YBa2Cu3O7 plasmas from their vacuum ultraviolet radiation time history

G. Mehlman, D. B. Chrisey, and J. S. Horwitz

Appl. Phys. Lett. 66, 1848 (1995); http://dx.doi.org/10.1063/1.113342 (3 pages) | Cited 2 times

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Simultaneous time and space resolution of the monochromatic vacuum ultraviolet emission from an excimer laser‐ablated plasma has yielded quantitative information on the plasma generation and velocity. From the time‐resolved spectral data, plasma velocities were measured and found to be ∼2.5×106 cm/s. The observed radiation time profile at the target surface reflects essentially the dynamics of the laser pulse absorption. Material continues to be ejected from the target for more than 100 ns after the end of the laser pulse. © 1995 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
81.15.Fg Pulsed laser ablation deposition
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