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10 Apr 1995

Volume 66, Issue 15, pp. 1859-2003

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Polarization of lasing emission in microdisk laser diodes

N. C. Frateschi, A. P. Kanjamala, A. F. J. Levi, and T. Tanbun‐Ek

Appl. Phys. Lett. 66, 1859 (1995); http://dx.doi.org/10.1063/1.113301 (3 pages) | Cited 11 times

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TE polarization of optical emission from microdisk laser diodes of radius R=5 μm, thickness L=0.3 μm, is found to dominate both below and above room‐temperature lasing threshold current, Ith=2 mA. TE emission in the lasing mode at λ=1560 nm wavelength is due to higher optical gain for TE modes in the quantum well device. In our device geometry, the intrinsic whispering gallery resonances have essentially no polarization selectivity. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

1.54 μm wavelength emission of erbium‐doped silicon films grown by ion beam epitaxy using sputtering‐type metal ion source

Morito Matsuoka and Shun‐ichi Tohno

Appl. Phys. Lett. 66, 1862 (1995); http://dx.doi.org/10.1063/1.113302 (3 pages) | Cited 7 times

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Erbium‐doped silicon films are grown by ion beam epitaxy using a newly developed electric‐mirror sputtering‐type metal ion source in an ultrahigh vacuum. A precise and steep profile of the erbium concentration, ranging from 1×1016 to 6×1020 cm−3, is achieved in situ by sputtering the erbium metal pellet with ions extracted from the silicon ion source. The oxygen concentration in the films, which is important to effective luminescence of erbium in silicon, is controlled in situ in the range from below 1×1018 to 2×1020 cm−3 by using argon gases containing oxygen impurities ranging from 1 ppb to 100 ppm. The oxygen concentration trapped in the silicon films strongly depends on the erbium concentration doped in the films. The erbium atoms are selectively oxidized in the host silicon film. As a result, the photoluminescence of 1.54 μm wavelength light is clearly observed in as‐deposited films. © 1995 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.55.Hx Other solid inorganic materials

Optically induced quasi‐phase matching in strontium barium niobate

Anthony S. Kewitsch, Terrence W. Towe, Gregory J. Salamo, Amnon Yariv, Min Zhang, Mordechai Segev, Edward J. Sharp, and Ratnakar R. Neurgaonkar

Appl. Phys. Lett. 66, 1865 (1995); http://dx.doi.org/10.1063/1.113303 (3 pages) | Cited 14 times

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We observe dynamic ferroelectric domain gratings in strontium barium niobate (SBN) induced by photorefractive space charge fields. The optically induced modulation of the spontaneous polarization attains a maximum of 1%. Quasi‐phase matched second harmonic enhancements are observed above the ferroelectric‐paraelectric phase transition due to the glassy ferroelectric nature of SBN. We find that the second harmonic power is significantly enhanced by recording gratings in optically fatigued rather than electrically poled crystals. © 1995 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Nonlinear absorption of a carbocyanine dye 1,1′,3,3,3′,3′‐hexamethylindotricarbocyanine iodide using a z‐scan technique

S. N. R. Swatton, K. R. Welford, S. J. Till, and J. R. Sambles

Appl. Phys. Lett. 66, 1868 (1995); http://dx.doi.org/10.1063/1.113304 (3 pages) | Cited 21 times

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Experimental and theoretical data are presented for the nonlinear absorption of the organic laser dye 1,1′,3,3,3′,3′‐hexamethylindotricarbocyanine iodide (HITCI) using a z‐scan technique. Experimental data show an induced absorption above laser fluences of 10 mJ/cm2 and a saturation of the nonlinear absorption above fluences of 0.5 J/cm2. A self‐consistent theoretical analysis, based on rate equations, is used to predict accurately the results of z scans taken at different pulse energies. Photophysical parameters, including the excited state lifetimes and absorption cross sections are derived for HITCI.
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42.65.-k Nonlinear optics
42.70.Hj Laser materials
42.55.Mv Dye lasers
78.47.-p Spectroscopy of solid state dynamics

Nonlinear single wavelength polarization switching in InGaAs/InP quantum well waveguides

I. Gontijo, D. T. Neilson, J. E. Ehrlich, A. C. Walker, G. T. Kennedy, and W. Sibbett

Appl. Phys. Lett. 66, 1871 (1995); http://dx.doi.org/10.1063/1.113305 (3 pages) | Cited 8 times

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The existence of two polarization dependent band edges in InGaAs/InP quantum well material has been used to demonstrate single wavelength all‐optical switching in a nonlinear guided wave Fabry–Perot resonator. The device had a single quantum well embedded in the optical waveguide and was characterized as a function of input pump power and laser wavelength using laser pulses of about 45 ps duration at a repetition rate of 82 MHz. A signal gain factor of over two was obtained for pump pulses of 1.2 pJ and the optimum operating wavelength of 1.51 μm was found to coincide with the heavy hole exciton absorption resonance. © 1995 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors

Effect of negative gain suppression on the stability of laser diodes

S. Bennett, C. M. Snowden, and S. Iezekiel

Appl. Phys. Lett. 66, 1874 (1995); http://dx.doi.org/10.1063/1.113306 (3 pages) | Cited 2 times

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The stability of homogeneously pumped single‐section laser diodes is analyzed theoretically and it is found that under certain bias conditions negative gain suppression factor laser diodes (NGSFLDs) self‐pulsate. An analytical condition for self‐pulsation in homogeneously pumped single‐section laser diodes is derived. The dynamics of self‐pulsating NGSFLDs under direct modulation are analyzed and a quasiperiodic route to chaos is found. © 1995 American Institute of Physics.  
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

High‐efficiency continuous operation HgBr excimer lamp excited by microwave discharge

Hideki Furusawa, Shinsuke Okada, and Minoru Obara

Appl. Phys. Lett. 66, 1877 (1995); http://dx.doi.org/10.1063/1.113307 (3 pages) | Cited 10 times

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The study of a HgBr excimer lamp (502 nm) excited by a microwave discharge is reported. Efficient operation in the blue‐green region was obtained with a HgBr fluorescence power of 42.8 W and an intrinsic efficiency of 9.4% at a 100 kHz operation frequency is obtained when 100 mg HgBr2 and 25 Torr neon gas are introduced in a quartz discharge sphere with a 14.13 cm3 discharge volume. © 1995 American Institute of Physics.
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42.72.Bj Visible and ultraviolet sources
52.80.Pi High-frequency and RF discharges

Pulse width reduction in single mode diode lasers via external injection of optical pulses

Claudio R. Mirasso

Appl. Phys. Lett. 66, 1880 (1995); http://dx.doi.org/10.1063/1.113308 (3 pages) | Cited 2 times

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We propose and numerically study a simple scheme to obtain large pulse‐width reduction of optical pulses generated by semiconductor lasers. The scheme consists of modulating two single‐mode semiconductor lasers coupled through a normal dispersion fiber. The optimal pulse compression is obtained for a particular range of phase delay between the two modulated electrical injection currents. In addition, the optical pulses so obtained have a larger output power and are very close to transform‐limited as required for soliton communication systems. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Second harmonic generation in hexagonal silicon carbide

P. M. Lundquist, W. P. Lin, G. K. Wong, M. Razeghi, and J. B. Ketterson

Appl. Phys. Lett. 66, 1883 (1995); http://dx.doi.org/10.1063/1.113309 (3 pages) | Cited 13 times

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See Also: Erratum

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We report optical second harmonic generation measurements in single crystal α‐SiC of polytype 6H. The angular dependence of second harmonic intensity was consistent with two independent nonvanishing second order susceptibility components, as expected for a crystal with hexagonal symmetry. For the fundamental wavelength of 1.064 μm the magnitudes of the two components were determined to be χzzz(2)=±1.2×10−7 and χzxx(2)=∓1.2×10−8 esu. The corresponding linear electro‐optic coefficient computed from this value is rzzz=±100 pm/V. The wavelength dependence of the nonlinear susceptibility was examined for second harmonic wavelengths between the bandgap (400 nm) and the red (700 nm), and was found to be relatively uniform over this region. The refractory nature of this compound and its large nonlinear optical coefficients make it an attractive candidate for high power nonlinear optical waveguide applications. © 1995 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Enhancement of photoelectric emission sensitivity of tungsten by potassium ion implantation

J. P. Girardeau‐Montaut, C. Girardeau‐Montaut, M. Afif, A. Perez, and S. D. Moustaïzis

Appl. Phys. Lett. 66, 1886 (1995); http://dx.doi.org/10.1063/1.113310 (3 pages) | Cited 2 times

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Measurements of single‐photon photoelectric emission sensitivity of ion implanted polycrystalline tungsten surface by 3×1016 K+ ions/cm2 are reported. They are compared to the data previously obtained for pure tungsten tested under the same conditions. The enhancement of the photoelectric sensitivity up to a factor of 50 was measured as a consequence of the change in the electronic properties of the tungsten surface, induced by the implanted alkali metal ions. Compared with other techniques used to reduce the work function of pure tungsten, the implanted surface exhibits a lower work function than the pure metal, and is capable of supporting high laser intensity for a long time. For these reasons it seems possible to consider the ion‐implantation technique as a suitable new method to significantly improve the photoelectric performances of usual metals, under high laser intensity illuminations. © 1995 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
73.30.+y Surface double layers, Schottky barriers, and work functions

Gettering of nickel to cavities in silicon introduced by hydrogen implantation

B. Mohadjeri, J. S. Williams, and J. Wong‐Leung

Appl. Phys. Lett. 66, 1889 (1995); http://dx.doi.org/10.1063/1.113311 (3 pages) | Cited 35 times

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Almost complete gettering of Ni in (100) Si was obtained by initially implanting H to a depth of ∼0.9 μm, followed by Ni implantation close to the surface, and subsequent thermal annealing. H‐induced cavities, as evidenced by transmission electron microscopy, act as efficient gettering sites for Ni. By performing Ni implantations at various doses and at elevated sample temperature, it was shown that formation of amorphous silicon caused by Ni implantation significantly reduces the gettering efficiency. The results will be discussed taking diffusion and solubility of Ni in Si into account, as well as formation of NiSi2 precipitates. © 1995 American Institute of Physics.
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61.72.Yx Interaction between different crystal defects; gettering effect
61.72.uf Ge and Si
61.80.Jh Ion radiation effects

Technique to suppress dislocation formation during high‐dose oxygen implantation of Si

O. W. Holland, D. K. Thomas, and D. S. Zhou

Appl. Phys. Lett. 66, 1892 (1995); http://dx.doi.org/10.1063/1.113312 (3 pages) | Cited 3 times

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Damage accumulation during high‐dose oxygen implantation of Si to form a silicon‐on‐insulator material can deleteriously affect the quality of the material. In particular, dislocations formed in the superficial silicon layer are difficult to anneal, requiring temperatures near the melting point of Si to reduce their density to acceptable levels. A technique to suppress the formation of these dislocations during irradiation is presented. The success of this technique lies in its ability to interact with vacancy‐type defects within the superficial layer whose accumulation precedes dislocation formation. A Si+ self‐ion beam is used as a spatially specific tool to introduce Si atoms into the vicinity of these precursor defects prior to the onset of dislocation growth. The interaction of this beam with the precursor defects is shown to be effective in suppressing dislocation formation during subsequent O+ implantation. © 1995 American Institute of Physics.
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61.80.Jh Ion radiation effects
61.72.Lk Linear defects: dislocations, disclinations
61.72.uf Ge and Si

Nanoscale hardness and microfriction of titanium nitride films deposited from the reaction of tetrakis (dimethylamino) titanium with ammonia

Y. W. Bae, W. Y. Lee, T. M. Besmann, and P. J. Blau

Appl. Phys. Lett. 66, 1895 (1995); http://dx.doi.org/10.1063/1.113313 (2 pages) | Cited 5 times

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Nanocrystalline titanium nitride films with very low carbon and oxygen content were deposited on single‐crystal silicon substrates from the reaction of tetrakis (dimethylamino) titanium, Ti[(CH3)2N]4, with ammonia at 633 K and a pressure of 665 Pa. The film consisted of ∼10 nm grains. The hardness of the film, measured by nanoindentation, was 12.7±0.6 GPa. The average kinetic friction coefficient, against type 440C stainless steel, was determined using a friction microprobe to be 0.43. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.Bs Mechanical and acoustical properties

Paradoxical predictions and a minimum failure time in electromigration

R. G. Filippi, G. A. Biery, and R. A. Wachnik

Appl. Phys. Lett. 66, 1897 (1995); http://dx.doi.org/10.1063/1.113314 (3 pages) | Cited 7 times

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A paradox arises when the two‐parameter log‐normal distribution is used to predict early electromigration lifetimes of a two‐level structure with Ti–AlCu–Ti stripes and interlevel W stud‐vias. The paradox is a direct consequence of the observed increase in the log‐normal sigma (σ) as the current density decreases and/or as the maximum allowed resistance change increases. The increase in σ implies that the first failures from equal and large sample sizes are expected to occur at low current densities rather than at high current densities. Similarly, for example, samples at relatively low cumulative failure are expected to fail at high levels of resistance change before failing at low levels of resistance change. This apparent paradox is resolved by testing a large set of samples and fitting the failure data to the three‐parameter log‐normal distribution. The third parameter, an incubation time or a minimum time required before failure can occur, is shown to increase as the maximum allowed resistance change increases. © 1995 American Institute of Physics.
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66.30.Qa Electromigration
73.61.At Metal and metallic alloys
85.40.Ls Metallization, contacts, interconnects; device isolation

Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

F. Stubhan, M. Ferguson, H.‐J. Füsser, and R. J. Behm

Appl. Phys. Lett. 66, 1900 (1995); http://dx.doi.org/10.1063/1.113315 (3 pages) | Cited 23 times

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Heteroepitaxial nucleation of diamond on mirror‐polished Si(001) substrates was achieved in a conventional hot filament reactor. The key to this achievement was the development of a bias‐enhanced nucleation process step analogous to the procedure for heteroepitaxial nucleation in microwave plasma chemical vapor deposition. The nucleation and subsequent growth of diamond were characterized by means of scanning electron microscopy, scanning tunneling microscopy, and Raman spectroscopy. Well‐developed diamond (001) crystal faces are observed even for very thin (∼0.3 μm) diamond films. High‐resolution scanning electron microscopy investigations of the early stage of growth revealed oriented crystallites on the substrate surface with a nucleation density of 109 cm−2. © 1995 American Institute of Physics.  
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Existence of enhanced solid state diffusion during mechanical alloying of Si and Ge

J. Schilz, K. Pixius, W. Wunderlich, and W. A. Kaysser

Appl. Phys. Lett. 66, 1903 (1995); http://dx.doi.org/10.1063/1.113316 (3 pages) | Cited 4 times

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Silicon‐germanium was mechanically alloyed in a high energy planetary ball mill and the microstructural development of the solid solution investigated. X‐ray diffraction and transmission electron microscopy revealed that alloy formation is accomplished by a solid state diffusion process which is enhanced by the creation of defects and strain during the milling process. © 1995 American Institute of Physics.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
66.30.Ny Chemical interdiffusion; diffusion barriers
61.72.Cc Kinetics of defect formation and annealing

Kinetic routes to the growth of monodisperse islands

Tue T. Ngo and R. Stanley Williams

Appl. Phys. Lett. 66, 1906 (1995); http://dx.doi.org/10.1063/1.113317 (3 pages) | Cited 6 times

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Strictly kinetic processes can lead to the formation of monodisperse colloidal particles in solution [H. Reiss, J. Chem. Phys. 19, 482 (1951)]. We demonstrate that the narrow size distribution of Ni islands grown on a Si (100) surface by chemical vapor deposition can be modeled very well by a simple kinetic theory, which indicates that monodisperse nanoparticles can be grown on surfaces by proper control of island nucleation and growth kinetics. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
68.55.-a Thin film structure and morphology

Effect of PH3 on the dissociative chemisorption of SiH4 and Si2H6 on Si(100): Implications on the growth of in situ doped Si thin films

N. Maity, L.‐Q. Xia, and J. R. Engstrom

Appl. Phys. Lett. 66, 1909 (1995); http://dx.doi.org/10.1063/1.113318 (3 pages) | Cited 15 times

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The effect of PH3on the dissociative chemisorption of SiH4 and Si2H6 on the Si(100) surface has been investigated with supersonic molecular beam techniques. Adsorbed phosphorus atoms, formed as a result of the reaction of PH3on the Si surface, inhibit the dissociative chemisorption of both SiH4 and Si2H6 through a short‐range steric mechanism. The probability of dissociative adsorption of both silicon hydrides is found to be proportional to the quantity 1‐θP2, where θP is the fractional coverage of adsorbed phosphorous atoms. These results have been employed to formulate a predictive model for the kinetics of Si thin‐film growth in the presence of PH3(g). © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Deep‐oxide planar buried‐channel AlGaAs–GaAs quantum well heterostructure waveguides with low bend loss

M. R. Krames, E. I. Chen, N. Holonyak, A. C. Crook, T. A. DeTemple, and P.‐A. Besse

Appl. Phys. Lett. 66, 1912 (1995); http://dx.doi.org/10.1063/1.113319 (3 pages) | Cited 8 times

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Data are presented on planar S‐bend waveguides fabricated in an AlxGa1−xAs–GaAs p‐n quantum well heterostructure (QWH) crystal by a self‐aligned process combining Si impurity‐induced layer disordering and ‘‘wet’’ native oxidation. In the process, a deep, low‐index (n∼1.7) oxide cladding structure is formed, creating a buried channel in the QWH core layers and defining the routing properties of ∼2.5‐μm‐wide guides. Deep‐oxide S‐bend waveguides with 100 μm offsets exhibit low excess bend losses with a 3 dB transition distance less than 140 μm for transverse electric polarization. These bend losses are significantly lower than those measured for oxide‐only and disordered‐only guides. Excellent optical isolation of the guided signal is observed, indicating very little crosstalk occurs between adjacent guides. © 1995 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Gn Optical waveguides and couplers

Highly efficient light emission from ZnS1−xTex alloys

I. K. Sou, K. S. Wong, Z. Y. Yang, H. Wang, and G. K. L. Wong

Appl. Phys. Lett. 66, 1915 (1995); http://dx.doi.org/10.1063/1.113275 (3 pages) | Cited 30 times

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ZnS1−xTex (0≤x≤1) single‐crystal alloy films were grown on GaAs and Si substrates by molecular beam epitaxy. Strong photoluminescence in the yellow to blue light region, with room‐temperature external quantum efficiencies of 2%–4% at an unoptimized excitation wavelength of 365 nm, was observed. The enhancement of luminescence was attributed to the presence of Te isoelectronic hole traps in the films. Strong bowing of the band‐gap energy as a function of composition x was also observed, with the minimum near x=0.7. The line width as well as the Stokes shift of the luminescence peak from the band edge were found to increase as Te composition decreases. © 1995 American Institute of Physics.
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78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
71.55.Gs II-VI semiconductors

Epitaxial regrowth of n+ polycrystalline silicon at 850 °C, induced by fluorine implantation

N. E. Moiseiwitsch, C. Marsh, P. Ashburn, and G. R. Booker

Appl. Phys. Lett. 66, 1918 (1995); http://dx.doi.org/10.1063/1.113276 (3 pages) | Cited 5 times

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A study is made of fluorine implantation into n+ polycrystalline silicon (polysilicon), with the aim of producing completely epitaxially regrown polysilicon emitters at lower temperatures. Polysilicon‐on‐silicon sheet resistance measurements are made to obtain an indication of the amount of polysilicon regrowth, and cross‐section transmission electron microscope examinations to directly observe the regrowth. Samples given a fluorine implant, followed by a 1000 °C/10 min preanneal, show 50% epitaxial regrowth of the polysilicon after an emitter drive‐in of only 850 °C/30 min. In contrast, in the absence of fluorine, negligible regrowth occurs even after an emitter drive‐in of 850 °C/480 min. © 1995 American Institute of Physics.
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81.15.Np Solid phase epitaxy; growth from solid phases
85.30.Pq Bipolar transistors

Midwave infrared stimulated emission from a GaInSb/InAs superlattice

R. H. Miles, D. H. Chow, Y.‐H. Zhang, P. D. Brewer, and R. G. Wilson

Appl. Phys. Lett. 66, 1921 (1995); http://dx.doi.org/10.1063/1.113277 (3 pages) | Cited 55 times

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Use of a cracked Sb source and a postgrowth anneal procedure has been found to yield significant improvements in optical efficiencies of GaInSb/InAs superlattices grown by molecular beam epitaxy. Appreciable 5 μm band‐to‐band luminescence has been observed at room temperature, and stimulated emission at 3.2 μm has been demonstrated in an optically pumped structure. Intrinsic properties of this class of superlattices favor them for application as efficient infrared lasers operating at comparatively high temperatures. © 1995 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.45.+h Stimulated emission
42.55.Px Semiconductor lasers; laser diodes

Surface strains in epitaxial systems

L. J. Gray, M. F. Chisholm, and Theodore Kaplan

Appl. Phys. Lett. 66, 1924 (1995); http://dx.doi.org/10.1063/1.113278 (3 pages) | Cited 22 times

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The stress state of heteroepitaxial film systems is examined using a boundary integral method together with boundary conditions that allow deflections at the substrate/film interface. It is found that for geometries that deviate from planar structures significant variations in surface strain and film energy arise. These calculations explain recent important experimental results for Ge growth on Si, including observations for Ge islands on Si that show the surface lattice constant can exceed the bulk Ge value, and observations that the preferred region for growth on terraced films is not necessarily at the steps. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

High strain effects evidenced by Raman scattering in arsenic clusters in As‐implanted GaAs

P. S. Pizani, A. Mlayah, J. Groenen, R. Carles, and A. Claverie

Appl. Phys. Lett. 66, 1927 (1995); http://dx.doi.org/10.1063/1.113279 (3 pages) | Cited 16 times

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Raman scattering has been used to track structural information on arsenic clusters in GaAs obtained by annealing of high dose As‐implanted GaAs layers. Beyond the good crystalline quality of both the clusters and the matrix, high tensile stresses within the precipitates have been originally deduced from the A1g and Eg mode frequency shifts. The results are well explained in terms of the difference between the thermal expansion coefficients of the two materials. The temperature dependence of the stresses corroborates this interpretation. © 1995 American Institute of Physics.
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61.72.J- Point defects and defect clusters
68.55.-a Thin film structure and morphology

Representative reflectance anisotropy spectra from Al(x)Ga(1−x)As layers (x=0 to 1.0) grown on GaAs(001) by molecular beam epitaxy

K. C. Rose, S. J. Morris, D. I. Westwood, D. A. Woolf, R. H. Williams, and W. Richter

Appl. Phys. Lett. 66, 1930 (1995); http://dx.doi.org/10.1063/1.113280 (3 pages) | Cited 11 times

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We present in this study reflectance anisotropy spectra also termed reflectance difference spectra for the surfaces of thick Al(x)Ga(1−x)As (x=0.0, 0.25, 0.50, 0.75, 1.00) layers grown on GaAs(001) by molecular beam epitaxy (MBE). Layers ≥2 μm thick were grown in order to minimize the interference effects from the buried interface and to obtain spectra representative of bulk Al(x)Ga(1−x)As surfaces. All surfaces were also independently characterized using reflection high energy electron diffraction (RHEED), and found to exhibit a c(4×4) reconstruction. The reflectance anisotropy spectra were qualitatively similar to one another, but showed clear dependence of energy and magnitude upon the mole fraction x. These spectra can serve as reference for determining stochiometries in MBE growth of Al(x)Ga(1−x)As and probably should be useful for future comparison to metalorganic vapor phase epitaxy (MOVPE) Al(x)Ga(1−x)As growth. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
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