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10 Apr 1995

Volume 66, Issue 15, pp. 1859-2003

Page 2 of 2 Pages Previous Page | Jump to Page

Microwave characteristics of coplanar waveguides on helium‐implanted epitaxial p‐InP

H. G. Rao, Q. Z. Liu, A. L. Kellner, X. S. Jiang, S. S. Lau, and P. K. L. Yu

Appl. Phys. Lett. 66, 1933 (1995); http://dx.doi.org/10.1063/1.113281 (3 pages) | Cited 2 times

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The electrodes of a microwave coplanar waveguide (CPW) on planar p‐InP epitaxial layers are electrically isolated by helium implantation. Impedance, attenuation, and relative effective dielectric permittivity of implanted and unimplanted samples are compared over a frequency range of 0.13–20 GHz. The results show that coplanar waveguides on 4He+ implanted materials exhibit very low loss (<1.4 dB/cm) and low dispersion comparable to those fabricated directly on semi‐insulating InP. CPWs made on uniformly implanted substrates show no significant change in dielectric permittivity after annealing at temperatures up to 310 °C. © 1995 American Institute of Physics.
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61.80.Jh Ion radiation effects
84.40.Az Waveguides, transmission lines, striplines
72.30.+q High-frequency effects; plasma effects

Behavior and mechanism of step bunching during metalorganic vapor phase epitaxy of GaAs

Masanori Shinohara and Naohisa Inoue

Appl. Phys. Lett. 66, 1936 (1995); http://dx.doi.org/10.1063/1.113282 (3 pages) | Cited 20 times

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The behavior of step bunching during GaAs growth for metalorganic vapor phase epitaxy is investigated by varying growth temperatures and substrate misorientation angles. It is found that monolayer step‐flow growth changes to step‐bunching growth when the misorientation angle, that is, the substrate surface step density, increases to a certain value, showing the existence of a critical step density. This critical value decreases with increasing growth temperature. The bunched terrace width does not depend on the misorientation angle, but it increases with growth temperature. We propose that the transition to step bunching from step‐flow growth occurs when the concentration of Ga adatoms at the step edges is less than the equilibrium concentration. Various bunching characteristics are explained using this model. © 1995 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase

Subpicosecond carrier lifetimes in GaAs grown by molecular beam epitaxy at low substrate temperature

A. Krotkus, R. Viselga, K. Bertulis, V. Jasutis, S. Marcinkevičius, and U. Olin

Appl. Phys. Lett. 66, 1939 (1995); http://dx.doi.org/10.1063/1.113283 (3 pages) | Cited 18 times

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Time‐resolved photoluminescence transients of low‐temperature molecular beam epitaxially grown GaAs layers have been measured with femtosecond temporal resolution and compared with numerical Monte Carlo calculations. It has been shown that the shape of these transients measured at different emission energies is determined not only by the carrier lifetime but also by the electron redistribution in the conduction band. Analysis of the experimental results yields the carrier lifetime in the investigated samples of 400 fs. © 1995 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Room‐temperature 2.78 μm AlGaAsSb/InGaAsSb quantum‐well lasers

H. Lee, P. K. York, R. J. Menna, R. U. Martinelli, D. Z. Garbuzov, S. Y. Narayan, and J. C. Connolly

Appl. Phys. Lett. 66, 1942 (1995); http://dx.doi.org/10.1063/1.113284 (3 pages) | Cited 42 times

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We describe room‐temperature 2.78 μm AlGaAsSb/InGaAsSb multiquantum well lasers. Pulsed laser operation was observed at 15 °C with a threshold current of 1.1 A (10 kA/cm2), and a maximum power output of 30 mW, and a maximum differential quantum efficiency of 9%. Lasers operated pulsed up to 60 °C with a characteristic temperature of 58 K over the range of 0–40 °C. To date, 2.78 μm is the longest emission wavelength for a room‐temperature III–V laser. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

On temperature dependence of the optically active behavior of an infrared active defect in silicon

Yi Shi, Fengmei Wu, Youdou Zheng, Masashi Suezawa, Masato Imai, and Koji Sumino

Appl. Phys. Lett. 66, 1945 (1995); http://dx.doi.org/10.1063/1.113285 (3 pages)

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Optically active behaviors of the infrared active defect, so‐called higher order bands, have been investigated at different temperatures in fast neutron irradiated silicon. It is found that the optically active decay follows logarithmic time dependence with a decay time of about 105 s, which is nearly temperature independent below 80 K. The residual absorption remains up to heating temperatures of 180 K. The experimental findings are discussed in terms of the relaxation characteristic of photoexcited carriers governed by neutron irradiation induced defect clusters. © 1995 American Institute of Physics.
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61.80.Hg Neutron radiation effects
71.55.Cn Elemental semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells

S. Jiang, S. C. Shen, S. M. Wang, and T. G. Andersson

Appl. Phys. Lett. 66, 1948 (1995); http://dx.doi.org/10.1063/1.113286 (3 pages) | Cited 4 times

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The photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells with the same well width and different cap layer thickness have been measured at 77 K. Several optical structures which are caused by excitonic transition are observed, and, taking into account both the strain and the quantum well effects, the subband structures of the samples have been calculated. A strong influence of the cap layer thickness on the lattice relaxation and optical quality has been found. By fitting the experimental results to calculations, we find that in lattice mismatched semiconductor quantum well systems both the well width and the barrier thickness determine the lattice relaxation and the optical quality. This is a new result and different from the point that the lattice relaxation is determined by well width in InGaAs/GaAs system. © 1995 American Institute of Physics.  
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78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Anomalous electrical and optical properties of polymeric carbons

V. Chellappa and B. Z. Jang

Appl. Phys. Lett. 66, 1951 (1995); http://dx.doi.org/10.1063/1.113287 (3 pages) | Cited 1 time

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Semiconducting polymeric carbons were prepared by pyrolyzing phenol formaldehyde resin in a nitrogen atmosphere between 500 to 800 °C for 0.5 to 48 h. Their logarithmic resistivity values were found to vary linearly with the temperature in the range of 20 to 200 °C. Properties such as switching, radiative recombination, and Mott’s minimum metallic conductivity were observed in these materials. These three characteristics, which are common with the inorganic amorphous semiconductors, suggest that these polymeric carbons can be included in the class of materials which satisfy the Ioffe–Regel condition, kL≊1 (where k is the electron wave vector and L is the mean‐free path). The switching and the radiative recombination phenomena observed in these materials provide experimental proof for the double injection model proposed by N. F. Mott [Adv. Phys. 16, 4 (1967)] for describing conduction processes in amorphous chalcogenide semiconductors. © 1995 American Institute of Physics.
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72.80.Ng Disordered solids
78.66.Jg Amorphous semiconductors; glasses
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Binding and diffusion of a Si adatom around the type A step on Si(001) c(4×2)

Jun Wang, D. A. Drabold, and A. Rockett

Appl. Phys. Lett. 66, 1954 (1995); http://dx.doi.org/10.1063/1.113288 (3 pages) | Cited 6 times

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The results of a simulation are described, using a density functional method, of the diffusion of adatoms on a flat Si(001)c(4×2) surface and around one type of surface step (the SA step). These indicate that there is a moderate additional energy barrier (0.2±0.1 eV) to cross the SA step as compared to the energy for diffusion on a flat surface. The dimer‐top lattice site on the lower terrace adjacent to the step edge is stabilized (by 0.15±0.1 eV) with respect to the flat surface result although the most stable binding sites near the step are unaffected. This behavior can be understood based on the disruption of dimer tilt near the step. The results suggest that adatoms are more likely to stop on lattice sites at the SA step edge than on lattice sites on the open surface. This may affect the relative dimer formation rate near the step with respect to the behavior on the flat surface even in the absence of a clear change in binding energy. The effect of the SA step terrace edge on adatom behavior is very short ranged and weak. This is consistent with the relatively small strain field and lack of change in dangling bond density associated with the step edge. © 1995 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
68.55.-a Thin film structure and morphology

InGaAs/GaAs multiple strained‐layer structure grown on a lattice‐matched InGaAs substrate wafer

I. J. Fritz, J. F. Klem, J. E. Schirber, J. A. Olsen, and W. A. Bonner

Appl. Phys. Lett. 66, 1957 (1995); http://dx.doi.org/10.1063/1.113289 (3 pages) | Cited 2 times

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Growth of In0.15Ga0.85As/GaAs multilayers are reported on lattice matched In0.04Ga0.96As buffer layers using two different starting substrates: (1) a bulk, lattice‐matched, Czochralski‐grown In0.04Ga0.96As wafer, and (2) a bulk (unmatched) GaAs wafer. The structures, grown by molecular‐beam epitaxy, consist of a 200‐nm‐thick undoped buffer plus a 28‐1/2 period modulation‐doped multilayer having 10‐nm‐thick In0.15Ga0.85As quantum wells and 25‐nm‐thick GaAs barriers doped over their 10‐nm central region. The 4 K Hall mobility of the multilayer grown on the InGaAs substrate is 57% larger than the structure grown on GaAs, despite a low dislocation density observed in transmission electron micrographs of the latter. These results suggest that bulk ternary substrates can provide enhanced performance for future electronic and optoelectronic devices. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors

Temperature dependence of photoluminescence lifetimes in ordered GaInP2

R. A. J. Thomeer, F. A. J. M. Driessen, and L. J. Giling

Appl. Phys. Lett. 66, 1960 (1995); http://dx.doi.org/10.1063/1.113290 (3 pages) | Cited 8 times

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The temperature dependence of carrier lifetimes in ordered (o) GaInP2 epilayers was investigated with and without cladding layers of disordered (d) GaInP2. The extremely long lifetime of the emission that moves with laser excitation density and the shorter lifetime of the nonmoving emission persist up to T=50 and 300 K, respectively. Both decays involve localized holes. By removal of the d top layer of the double heterostructure, an enhanced hole diffusion to the surface occurs, which results in a slightly faster, nonexponential decay. It is argued that, within the nominally o layer, a type II recombination occurs and that o and d GaInP2 exhibit a type II band lineup. The appropriate band curvatures in the d top layer cause hole localization at the d side of the o–d interfaces. The minority carrier lifetime shows two‐dimensional behavior between T=70 and 170 K, and decrease above 170 K. © 1995 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Enhancement of the Schottky barrier height of Au/ZnSSe diodes

A. Z. Wang and W. A. Anderson

Appl. Phys. Lett. 66, 1963 (1995); http://dx.doi.org/10.1063/1.113291 (3 pages) | Cited 4 times

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We report a significant enhancement of the Schottky barrier height of Au/N–ZnS0.07Se0.93 diodes formed by the cryogenic process. The improvement is around 25%. This technique had previously been successfully applied to some narrow band gap semiconductors, such as InP and InGaAs. We explain this improvement by the metal–insulator–semiconductor model and the uniformity of the metal film so‐obtained. This technique is proven to be of importance for making low dark/leakage current visible light sensitive optoelectronic devices. © 1995 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Low regrowth–interface recombination rates in InGaAs–GaAs buried ridge lasers fabricated by in situ processing

T. A. Strand, B. J. Thibeault, D. S. L. Mui, L. A. Coldren, P. M. Petroff, and E. L. Hu

Appl. Phys. Lett. 66, 1966 (1995); http://dx.doi.org/10.1063/1.113292 (3 pages) | Cited 8 times

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We report the use of low damage dry etching and in situ molecular beam epitaxial (MBE) regrowth in creating high‐quality regrown interfaces. By fabricating buried, etched ridge InGaAs/GaAs lasers, we are able to measure the interface recombination portion of the threshold current and extract the interface recombination velocity. We find that a two‐part etching process composed of ion beam assisted etching and chlorine gas etching, followed by in situ MBE regrowth, results in a very low interface recombination velocity of 3×103 cm/s. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

CCl4 doping of GaN grown by metalorganic molecular beam epitaxy

C. R. Abernathy, J. D. MacKenzie, S. J. Pearton, and W. S. Hobson

Appl. Phys. Lett. 66, 1969 (1995); http://dx.doi.org/10.1063/1.113293 (3 pages) | Cited 61 times

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Hole concentrations up to 1017 cm−3 are achieved in GaN doped with C from a CCl4 source during metalorganic molecular beam epitaxy at 700 °C. The hole mobility under these conditions is 103 cm2 V−1 s−1 at 300 K. The deposition rate of the GaN is reduced by addition of CCl4 to the growth chemistry even at low flow rates and net etching is observed for a halocarbon flow above 1.1 sccm under our conditions. Annealing up to 800 °C did not increase the hole concentration indicating that residual hydrogen passivation of the acceptors is not significant when employing a He carrier gas for transporting the group III metalorganic precursor (triethylgallium). © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.uj III-V and II-VI semiconductors

Electron Hall mobility of n‐GaN

D. L. Rode and D. K. Gaskill

Appl. Phys. Lett. 66, 1972 (1995); http://dx.doi.org/10.1063/1.113294 (2 pages) | Cited 47 times

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See Also: Erratum

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It is known that recently published electron Hall mobility data by J. G. Kim, A. C. Frenkel, H. Liu, and R. M. Park [Appl. Phys. Lett. 65, 91 (1994)] for cubic GaN at 300 K are in excellent agreement with theoretical calculations of Hall mobility for uncompensated material. The Hall scattering factor is calculated and Hall effect free‐electron concentration data are corrected for samples with free‐electron concentrations of 7.24×1017 cm−3 and 1.74×1018 cm−3. The corresponding experimental/theoretical Hall mobility is 760/744 and 530/543. Hence, agreement between theory and experiment is demonstrated within 2.5%. © 1995 American Institute of Physics.
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72.80.Ey III-V and II-VI semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.My Galvanomagnetic and other magnetotransport effects

Schottky‐based band lineups for refractory semiconductors

M. W. Wang, J. O. McCaldin, J. F. Swenberg, T. C. McGill, and R. J. Hauenstein

Appl. Phys. Lett. 66, 1974 (1995); http://dx.doi.org/10.1063/1.113295 (3 pages) | Cited 35 times

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An overview is presented of band alignments for small‐lattice parameter, refractory semiconductors. The band alignments are estimated empirically through the use of available Schottky barrier height data, and are compared to theoretically predicted values. Results for tetrahedrally bonded semiconductors with lattice constant values in the range from C through ZnSe are presented. Based on the estimated band alignments and the recently demonstrated p‐type dopability of GaN, we propose three novel heterojunction schemes which seek to address inherent difficulties in doping or electrical contact to wide‐gap semiconductors such as ZnO, ZnSe, and ZnS. © 1995 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Blue photoluminescence and local structure of Si nanostructures embedded in SiO2 matrices

Qi Zhang, S. C. Bayliss, and D. A. Hutt

Appl. Phys. Lett. 66, 1977 (1995); http://dx.doi.org/10.1063/1.113296 (3 pages) | Cited 66 times

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Strong and stable blue photoluminescence (PL), visible to the naked eye under 0.4 μW of 300 nm and 2.7 μW of 370 nm excitation, has been observed for samples of Si clusters embedded in SiO2 matrices, prepared by rf co‐sputtering followed by N2 annealing at 800 °C. Si K‐edge extended x‐ray absorption fine structure (EXAFS) and near‐edge x‐ray absorption fine structure (NEXAFS) strongly suggest the existence of Si nanoclusters with crystalline cores in the efficient emitting material. The PL excitation dependence is explained by an increase in the conduction band density of states deep in the band, and the formation of a band tail. © 1995 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Band‐structure tailoring by electric field in a weakly coupled electron‐hole system

Y. Naveh and B. Laikhtman

Appl. Phys. Lett. 66, 1980 (1995); http://dx.doi.org/10.1063/1.113297 (3 pages) | Cited 30 times

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A novel semiconductor switching device is proposed. It is based on unique control over the two‐dimensional band structure of an AlSb‐GaSb‐InAs‐AlSb heterostructure. By applying small electric fields, virtually any value can be achieved for such parameters as the energy gaps, effective masses, and carrier types and densities in the material. The proposed heterostructure can be readily fabricated with existing epitaxial techniques. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors

Microwave mixing and noise in the two‐dimensional electron gas medium at low temperatures

J. X. Yang, J. Li, C. F. Musante, and K. S. Yngvesson

Appl. Phys. Lett. 66, 1983 (1995); http://dx.doi.org/10.1063/1.113298 (3 pages) | Cited 10 times

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Microwave mixing and noise measurement techniques have been used to characterize energy relaxation and noise phenomena for the two‐dimensional electron gas (2DEG) medium in single AlGaAs/GaAs modulation‐doped quantum wells. Mixing experiments at 94 GHz yield the energy relaxation time directly, in good agreement with optical methods previously reported. The noise output power at low microwave frequencies (1.5–3.5 GHz), is shown to have one term due to Nyquist noise at the electron temperature, and a second frequency‐dependent term caused by fluctuations in the electron temperature. © 1995 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects
72.70.+m Noise processes and phenomena
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Electrical characterization of surface defects in GaSb created by hydrogen plasma

P. S. Dutta, K. S. Sangunni, H. L. Bhat, and Vikram Kumar

Appl. Phys. Lett. 66, 1986 (1995); http://dx.doi.org/10.1063/1.113299 (3 pages) | Cited 9 times

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Using steady state and transient capacitance measurements, the electrical characteristics of a defect layer on the surface of bulk GaSb created during the hydrogen plasma treatment is presented. The trap density, activation energies, and the thickness of the defect layer have been calculated. The trap densities are comparable in magnitude to the carrier concentration. The defects introduce multiple energy levels in the band gap. Typical defect layer thicknesses range from a few angstroms to a fraction of a micron. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Anomalous optical response of Nd1.85Ce0.15CuO4−y superconducting thin films

S. Bhattacharya, S. N. Mao, W. Jiang, M. Rajeswari, Qi Li, X. X. Xi, and T. Venkatesan

Appl. Phys. Lett. 66, 1989 (1995); http://dx.doi.org/10.1063/1.113300 (3 pages) | Cited 1 time

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A study of the normal state optical response of epitaxial thin films of electron doped superconductor Nd1.85Ce0.15CuO4−y is reported. The normal state optical response of these films were not proportional to the temperature derivative of the resistance of the films as expected by a bolometric model and as seen in p‐type superconductors such as YBa2Cu3O7−δ. The normal state optical response of the films with different transition temperatures were also remarkably different from each other. The observation of anomalous optical response is attributed to the possible presence of photoconductivity in Nd1.85Ce0.15CuO4−y. © 1995 American Institute of Physics.
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74.25.Gz Optical properties
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors

Submillimeter wave responses in NbN/AlN/NbN tunnel junctions

Yoshinori Uzawa, Zhen Wang, Akira Kawakami, and Bokuji Komiyama

Appl. Phys. Lett. 66, 1992 (1995); http://dx.doi.org/10.1063/1.113672 (3 pages) | Cited 11 times

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The submillimeter wave frequency responses of NbN/AlN/NbN tunnel junctions have been investigated using quasioptical coupling techniques and an optically pumped far‐infrared laser. A two junction array was integrated at the feeds of a bowtie antenna. Measurements on the junctions were made by monitoring photon‐assisted tunneling steps induced in the current–voltage characteristics. These n=±1 photon steps were clearly observed with irradiation at 303, 594, 693, and 762 GHz. The results suggest it will be possible to realize submillimeter wave mixers by using these junctions. © 1995 American Institute of Physics.
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74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions
85.25.Dq Superconducting quantum interference devices (SQUIDs)
85.60.Gz Photodetectors (including infrared and CCD detectors)

Nonresonant microwave absorption studies of surface passivation of superconducting YBa2Cu3O7−δ thin films

Amit Rastogi, V. Sivasubramanian, V. R. K. Murthy, M. S. Hegde, and S. V. Bhat

Appl. Phys. Lett. 66, 1995 (1995); http://dx.doi.org/10.1063/1.113673 (3 pages) | Cited 10 times

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The surfaces of laser ablated thin films of YBa2Cu3O7−δ have been passivated with about 100 Å thick textured layer of Ca0.95Sr0.025Ba0.025Zr0.98Ta0.01Ti0.01O3. It is shown that this low loss dielectric material preserves the quality of the surface and also prolongs the aging process. The films (both passivated and as‐deposited) have been studied for degradation on exposure to atmosphere and also on dipping directly in water. The technique of nonresonant microwave absorption is used to study the effects and extent of degradation in these films. © 1995 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
74.25.N- Response to electromagnetic fields

An application of electrothermal feedback for high resolution cryogenic particle detection

K. D. Irwin

Appl. Phys. Lett. 66, 1998 (1995); http://dx.doi.org/10.1063/1.113674 (3 pages) | Cited 14 times

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A novel type of superconducting transition edge sensor is proposed. In this sensor, the temperature of a superconducting film is held constant by feeding back to its position on the resistive transition edge. Energy deposited in the film is measured by a reduction in the feedback Joule heating. This mode of operation should lead to substantial improvements in resolution, linearity, dynamic range, and count rate. Fundamental resolution limits are below ΔE=√kT2C, which is sometimes incorrectly referred to as the thermodynamic limit. This performance is better than any existing technology operating at the same temperature, count rate, and absorber heat capacity. Applications include high resolution x‐ray spectrometry, dark matter searches, and neutrino detection. © 1995 American Institute of Physics.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
29.40.-n Radiation detectors

Y–Ba–Cu–O multilayer structures with amorphous dielectric layers for multichip modules using ion‐assisted pulsed‐laser deposition

R. P. Reade, P. Berdahl, R. E. Russo, and L. W. Schaper

Appl. Phys. Lett. 66, 2001 (1995); http://dx.doi.org/10.1063/1.114285 (3 pages) | Cited 9 times

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Existing technology to construct high‐temperature superconductor (HTSC) multichip modules (MCM’s) incorporating several YBa2Cu3O7−δ (YBCO) thin films and thick dielectric layers are based on epitaxial growth of all layers from the template of a single‐crystal substrate. This work demonstrates an alternate method to fabricate these structures: the use of a biaxially aligned yttria‐stabilized zirconia (YSZ) intermediate layer deposited by ion‐assisted pulsed‐laser deposition. Using this technique, a YBCO thin film with Tc∼87 K and Jc∼3×105 A/cm2 was grown on a 5 μm amorphous SiO2 layer. In addition, YBCO/YSZ/SiO2/YSZ/YBCO/CeO2/YSZ and YBCO/YSZ/amorphous‐YSZ/YBCO/CeO2/YBCO multilayer structures were constructed. © 1995 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
74.78.-w Superconducting films and low-dimensional structures
85.25.-j Superconducting devices
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