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17 Apr 1995

Volume 66, Issue 16, pp. 2013-2142

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Degradation of (Zn,Cd)Se quantum well heterostructures for blue/green light emitters under high optical injection

M. Hovinen, J. Ding, A. V. Nurmikko, G. C. Hua, D. C. Grillo, Li He, J. Han, and R. L. Gunshor

Appl. Phys. Lett. 66, 2013 (1995); http://dx.doi.org/10.1063/1.113676 (3 pages) | Cited 15 times

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Picosecond laser pulses were used to simulate current injection and generate dark defects in ZnSSe/ZnCdSe quantum well structures. The formation of the defects was monitored in situ with a photoluminescence microscope setup, with spatial resolution of about 1 μm. Dark defects are observed to form in the ZnCdSe quantum well, analogous to electrical injection in separate confinement heterostructure diode lasers. Transmission electron microscopy of the optically generated dislocation network gives further insight to the origin of the defect microstructure. © 1995 American Institute of Physics.
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61.72.Lk Linear defects: dislocations, disclinations
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.60.Jb Light-emitting devices

Silicon on insulator photoelastic optical waveguide and polarizer

L. S. Yu, Z. F. Guan, Q. Z. Liu, and S. S. Lau

Appl. Phys. Lett. 66, 2016 (1995); http://dx.doi.org/10.1063/1.113677 (3 pages) | Cited 9 times

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Single‐mode silicon on insulator photoelastic waveguides and polarizers have been investigated. It was found that waveguides induced by the photoelastic effect can be low loss (1.5 dB/cm at 1.53 μm) and can serve as polarizers as well. A polarization distinction ratio of 14 dB for both TE and TM mode has been obtained. © 1995 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers

Efficient optical parametric generation in an organomineral crystal

I. D. W. Samuel, B. Villacampa, D. Josse, S. Khodja, and J. Zyss

Appl. Phys. Lett. 66, 2019 (1995); http://dx.doi.org/10.1063/1.113678 (3 pages) | Cited 5 times

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Organomineral crystals are engineered to combine the favorable properties of organic and inorganic materials. High gain parametric emission and amplification at telecommunications wavelengths are demonstrated in an organomineral crystal, 2‐amino‐5‐nitropyridinium‐dihydrogen phosphate. A novel angle‐noncritical type‐II phase‐matching configuration is observed in parametric emission, and parametric amplification is demonstrated at 1.5 μm. © 1995 American Institute of Physics.  
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Imaging and profiling surface microstructures with noninterferometric confocal laser feedback

Chun‐Hung Lu, Jyhpyng Wang, and King‐Li Deng

Appl. Phys. Lett. 66, 2022 (1995); http://dx.doi.org/10.1063/1.113679 (3 pages) | Cited 13 times

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Exploiting the sensitivity and the self‐aligning features of the confocal laser‐feedback technique and the convenience of superluminescent laser diodes, we developed an optical method for imaging and profiling surface microstructures with a depth resolution as great as 20 nm. The incoherent, noninterferometric nature of the technique enables fast open‐loop operation and large dynamic range. Measurements of calibrated semiconductor surface microstructures and optical ridge waveguides are demonstrated. © 1995 American Institute of Physics.
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68.37.-d Microscopy of surfaces, interfaces, and thin films
68.35.B- Structure of clean surfaces (and surface reconstruction)
42.82.-m Integrated optics

Carrier confinement by multiple quantum barriers in 1.55 μm strained GaInAs/AlGaInAs quantum well lasers

T. Fukushima, H. Shimizu, K. Nishikata, Y. Hirayama, and M. Irikawa

Appl. Phys. Lett. 66, 2025 (1995); http://dx.doi.org/10.1063/1.113680 (3 pages) | Cited 6 times

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Carrier confinement performance by multiple quantum barriers (MQB) is demonstrated in 1.55 μm strained GaInAs/AlGaInAs multiple quantum well (MQW) lasers grown by molecular beam epitaxy. The strained MQW lasers with MQB at p‐side optical confinement layer show larger characteristic temperature and slope efficiency at high temperature than those without MQB. It is also shown that the MQW lasers with MQB have less spontaneous emission from the optical confinement layer than the lasers without MQB. As another important result, it is demonstrated for the first time that the MQW lasers with MQB have less dependency of the K factor on the temperature than the lasers without MQB. These results further verify the effective carrier confinement performance of GaInAs/AlInAs MQB structure. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Reduction of the frequency chirp of two section distributed feedback laser by nonuniform current injection

J. Feng, T. R. Chen, B. Zhao, and A. Yariv

Appl. Phys. Lett. 66, 2028 (1995); http://dx.doi.org/10.1063/1.113681 (3 pages) | Cited 2 times

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The effect of nonuniform current injection on the frequency chirp of a two section distributed feedback (DFB) laser, which is under large signal modulation, is measured while the optical intensity and optical modulation depth are fixed. By adjusting the injection current distribution in the laser, the frequency chirp can be reduced since the effects of carrier density fluctuations in the two sections on the chirp partially compensate each other. The range of the injection current ratio of the two sections is found in which the chirp is at its minimum. The reduction of the frequency chirp is predicted by a computer simulation for two section DFB lasers which accounts for the longitudinal spatial hole burning. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Threshold carrier density in vertical cavity surface emitting lasers

J. W. Bae, G. Shtengel, D. Kuksenkov, H. Temkin, and P. Brusenbach

Appl. Phys. Lett. 66, 2031 (1995); http://dx.doi.org/10.1063/1.113682 (3 pages) | Cited 5 times

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A combination of spontaneous emission lifetime and spectral measurements is used to estimate the threshold carrier density in small diameter gain guided vertical cavity surface emitting lasers. Differential spontaneous emission lifetimes measured below threshold are extrapolated to a τth=0.4 ns at threshold. The corresponding threshold carrier density is Nth=7.9×1018 cm−3. The measured carrier densities are used to calculate spontaneous emission spectra. These are in agreement with the edge emission spectra obtained on cleaved laser chips. For the measured carrier density, we estimate the threshold gain at the emission wavelength of g=1640 cm−1. © 1995 American Institute of Physics.  
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Thermally enhanced ultraviolet photosensitivity in GeO2 and P2O5 doped optical fibers

P. J. Lemaire, A. M. Vengsarkar, W. A. Reed, and D. J. DiGiovanni

Appl. Phys. Lett. 66, 2034 (1995); http://dx.doi.org/10.1063/1.113683 (3 pages) | Cited 12 times

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The 248 nm UV photosensitivity of H2 loaded optical fibers is shown to be significantly enhanced by increasing the temperature during the UV exposure. Heating to 250–400 °C resulted in dramatic UV reaction rate increases in GeO2 doped fibers. Increasing the core temperature during 248 nm irradiation caused P2O5 doped fibers to become photosensitive. © 1995 American Institute of Physics.
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42.81.-i Fiber optics
42.70.Ce Glasses, quartz
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

New CdTe photoconductor array detector for x‐ray applications

S. S. Yoo, S. Sivananthan, J. P. Faurie, B. Rodricks, J. Bai, and P. A. Montano

Appl. Phys. Lett. 66, 2037 (1995); http://dx.doi.org/10.1063/1.113684 (3 pages) | Cited 5 times

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A CdTe photoconductor array x‐ray detector was grown using molecular beam epitaxy (MBE) on a Si(100) substrate. The temporal response of the photoconductor arrays is as fast as 21 ps rise time and 38 ps full width half‐maximum (FWHM). The spatial resolution of the photoconductor was good enough to provide 75 μm FWHM using a 50 μm synchrotron x‐ray beam. A substantial number of x‐ray photons are absorbed effectively within the MBE CdTe layer as observed from the linear response up to 15 keV. These results demonstrate that MBE grown CdTe is a suitable choice of the detector materials to meet the requirements for x‐ray detectors. © 1995 American Institute of Physics.
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07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
29.40.Wk Solid-state detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Temperature‐dependent threshold and modulation characteristics in InGaAs/GaAs quantum‐well ridge‐waveguide lasers

S. Y. Hu, S. W. Corzine, Z. M. Chuang, K.‐K. Law, D. B. Young, A. C. Gossard, L. A. Coldren, and J. L. Merz

Appl. Phys. Lett. 66, 2040 (1995); http://dx.doi.org/10.1063/1.113685 (3 pages) | Cited 9 times

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The observed temperature dependence of threshold currents in InGaAs/GaAs quantum‐well ridge‐waveguide lasers is modeled. This method incorporates both experimental data and theoretical gain calculations. The results show that lateral leakage currents must be included in the ridge‐waveguide laser models. Based on the same model, the temperature‐dependent modulation characteristics for InGaAs/GaAs quantum‐well ridge‐waveguide lasers are also investigated. © 1995 American Institute of Physics.  
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Free‐carrier induced saturation of the Faraday rotation in semimagnetic semiconductors

S. Hugonnard‐Bruyère, C. Buss, R. Frey, and C. Flytzanis

Appl. Phys. Lett. 66, 2043 (1995); http://dx.doi.org/10.1063/1.113686 (3 pages) | Cited 7 times

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Large photoinduced Faraday rotations of the polarization direction of a probe beam traveling through a semimagnetic semiconductor are obtained at temperatures higher than that of liquid nitrogen when a pump pulse is sent through the material. These rotations are quasiproportional to the photoinduced free‐carrier density and the applied magnetic field and are strongly resonant with the band‐gap‐probe frequency detuning. A model based on the free‐carrier induced saturation of the refractive indices explains well the experimental observations. The high values obtained for the photoinduced polarization rotations (more than 1° pJ−1 μm2) make such a process attractive for the design of optical signal processing devices. © 1995 American Institute of Physics.
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78.20.Ls Magneto-optical effects
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Violet‐blue GaN homojunction light emitting diodes with rapid thermal annealed p‐type layers

M. Asif Khan, Q. Chen, R. A. Skogman, and J. N. Kuznia

Appl. Phys. Lett. 66, 2046 (1995); http://dx.doi.org/10.1063/1.113687 (2 pages) | Cited 50 times

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In this letter we report the fabrication and optical‐electrical characterization of violet‐blue GaN homojunction light emitting diodes. Rapid thermal annealing at 1150 °C (for 30 s) was used to activate the p‐dopant species (Mg), which resulted in p‐type GaN whose photoluminescence response centered around 438 nm is much stronger than that obtained from material annealed in the growth chamber at lower temperatures (700–800 °C) and a longer time (20 min). © 1995 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Fd III-V semiconductors
68.55.-a Thin film structure and morphology

Novel high‐power and coherent semiconductor laser with a shaped unstable resonator

Salvador Guel‐Sandoval, Alan H. Paxton, Swaminathan T. Srinivasan, Shang‐Zhu Sun, Stephen D. Hersee, Michael S. Allen, Charles E. Moeller, David J. Gallant, Gregory C. Dente, and John G. McInerney

Appl. Phys. Lett. 66, 2048 (1995); http://dx.doi.org/10.1063/1.113688 (3 pages) | Cited 7 times

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We describe a novel high power semiconductor laser that employs a shaped unstable resonator waveguide to maintain fundamental spatial mode operation at high power levels. We call this device the SHUR (shaped unstable resonator) laser. By photoetching and regrowth we locate a secondary, nonplanar antiguide, beneath the main part of the waveguide. The lasing mode couples to this secondary guide and experiences lateral antiguiding, which is the basis of the unstable resonator action. Prototype versions of the SHUR laser show a maximum pulsed output power of 770 mW per facet. The focused beam is dominated by a single lobe that contains 47% of the output power. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Electrostatic plasma injection switch

M. Chung and E. E. Kunhardt

Appl. Phys. Lett. 66, 2051 (1995); http://dx.doi.org/10.1063/1.113689 (3 pages)

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A low pressure gas discharge switch operating in the 0.1–0.7 Torr range and triggered by electrostatic plasma injection is described. The trigger and cathode electrodes are coaxial cylinders, with the trigger electrode (the inner cylinder) being divided into resistively isolated sections. The anode electrode is collinear with both of these electrodes. Commutation is initiated by the generation of a plasma in the trigger‐cathode region, with subsequent injection into the anode–cathode space. This injection is driven by self‐generated voltage gradients between the sections of the trigger electrode. Results from measurements of the characteristics (plasma injection speed, electron density and temperature, anode and trigger current, and voltage wave forms) of a test device operated at hold‐off voltages of up to 17 kV and currents up to 5 kA are presented. © 1995 American Institute of Physics.
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52.75.Kq Plasma switches (e.g., spark gaps)

Nondestructive depth profile measurement of a Co/Ti bilayer using refracted x‐ray fluorescence

T. A. Roberts, D. H. Ko, K. E. Gray, Y. Y. Wang, R. P. H. Chang, and S. Ogawa

Appl. Phys. Lett. 66, 2054 (1995); http://dx.doi.org/10.1063/1.113900 (3 pages) | Cited 2 times

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The depth profile of a Co (300 Å)/Ti (50 Å) bilayer on Si(100) is studied by nondestructive refracted x‐ray fluorescence before and after annealing. Following annealing, the angular distribution of the x‐ray fluorescence indicates an inversion of the Co and Ti layers and the formation of CoSi2. These were confirmed by cross‐section transmission electron microscopy and x‐ray nanoprobe measurements. This success suggests that refracted x‐ray fluorescence, which can be used as an in situ probe, may be ideally suited for analysis of thin‐film reactions and interdiffusion. © 1995 American Institute of Physics.
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78.70.En X-ray emission spectra and fluorescence
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Boron‐induced morphology changes in silicon chemical vapor deposition: A scanning tunneling microscopy study

Yajun Wang and Robert J. Hamers

Appl. Phys. Lett. 66, 2057 (1995); http://dx.doi.org/10.1063/1.113901 (3 pages) | Cited 15 times

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Scanning tunneling microscopy has been used to investigate the influence of surface boron on silicon growth via chemical vapor deposition (CVD). The presence of boron‐induced reconstructions on the Si(001) surface dramatically changes the surface morphology during subsequent CVD growth of silicon using disilane at 815 K. Boron‐induced reconstructions inhibit the lateral diffusion of silicon atoms from terraces to step edges, leading to greatly enhanced island nucleation, and also reduce the local surface reactivity toward disilane. Strong segregation of boron to the growth surface allows the enhanced island nucleation to persist to subsequent terraces during multilayer CVD growth of silicon, producing a rough but epitaxial surface. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
61.72.uf Ge and Si

Surface roughness effects in laser crystallized polycrystalline silicon

D. J. McCulloch and S. D. Brotherton

Appl. Phys. Lett. 66, 2060 (1995); http://dx.doi.org/10.1063/1.113902 (3 pages) | Cited 37 times

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Two surface roughening mechanisms have been distinguished in laser crystallized polycrystalline Si: one is related to rapid release of hydrogen from hydrogen‐rich plasma enhanced chemical vapor deposited amorphous Si and the other is independent of the hydrogen content of the material and is determined by the total number of pulses incident on the surface. At, or beyond, the melt threshold energy there is a positive feedback effect between a beam‐induced periodic surface roughness pattern and enhancement of this pattern by interference effects in subsequent pulses. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Numerical simulation of electromigration‐induced shape changes of voids in bamboo lines

O. Kraft and E. Arzt

Appl. Phys. Lett. 66, 2063 (1995); http://dx.doi.org/10.1063/1.113903 (3 pages) | Cited 50 times

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Recently, it was found that electromigration‐induced failure of metallic interconnects in integrated circuits occurs when rounded voids deform into narrow slitlike voids, which are often transgranular. The mechanism of this shape change is now examined by numerical simulation on the basis of electromigration‐driven surface diffusion. As a result, it is found that shape change and motion of voids are competing processes. Large voids with respect to the linewidth are deformed by the electron wind whereas small voids move without any shape changes. Combining diffusional anisotropy with electron wind dynamics allows the experimentally observed faceting of even small voids to be reproduced in the simulation. © 1995 American Institute of Physics.
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66.30.Qa Electromigration
85.40.Ls Metallization, contacts, interconnects; device isolation
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Epitaxial growth of cubic AlN films on (100) and (111) silicon by pulsed laser ablation

Wen‐Tai Lin, Ling‐Cheng Meng, Guo‐Ju Chen, and Hok‐Shin Liu

Appl. Phys. Lett. 66, 2066 (1995); http://dx.doi.org/10.1063/1.113904 (3 pages) | Cited 43 times

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Epitaxial growth of cubic AlN thin films on (100) and (111) silicon substrates by pulsed laser ablation is reported. The epitaxial AlN films can be grown at temperatures above 630 °C in 100–300 mTorr of N2. The epitaxial orientation relationships are (100)AlN//(100)Si and [010]AlN//[010]Si, and (111)AlN//(111)Si and [011]AlN//[011]Si. The growth of microtwins on (111) planes of AlN was also observed. In the present study, for the AlN thin films grown on (100)Si at around 680 °C in 100 mTorr of N2, the epitaxial growth can cover about 90% of the film region. © 1995 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology

Heteroepitaxial growth of a c ‐axis‐oriented BaTiO3/YBa2Cu3O7−σ bilayer structure by pulsed laser ablation

Jie Zhang, Zhenghao Chen, Dafu Cui, Huibin Lu, Yueliang Zhou, Lin Li, Guozhen Yang, Nan Jiang, and Jianmin Hao

Appl. Phys. Lett. 66, 2069 (1995); http://dx.doi.org/10.1063/1.113905 (3 pages) | Cited 16 times

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BaTiO3/YBa2Cu3O7−δ  bilayer structure has been epitaxially grown on a LaAlO3 (100) substrate by pulsed laser ablation with sintered YBa2Cu3O7−δ  and single crystal BaTiO3 targets. The analysis of the BaTiO3/YBCO bilayer structure by x‐ray diffraction (XRD) 2θ/θ, w, and ϕ scans as well as high resolution electron microscopy indicates that the bilayer thin films have a high degree of c‐axis‐oriented epitaxial crystalline structure. The surface morphology of the thin film was observed by scanning electron microscopy. © 1995 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology

Use of photosensitive polyimide for deep x‐ray lithography

V. White, R. Ghodssi, C. Herdey, D. D. Denton, and L. McCaughan

Appl. Phys. Lett. 66, 2072 (1995); http://dx.doi.org/10.1063/1.113906 (2 pages) | Cited 5 times

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In this letter, a method is outlined and results presented for an x‐ray lithography micromachining process that offers a greatly improved sensitivity over the LIGA process. This process is based on photosensitive polyimide (PPI), which is a commercial photoresist typically used as a passivation layer or dielectric material in the semiconductor industry. The main benefit of this process is its high sensitivity, which is approximately two orders of magnitude greater than that of the PMMA used in the LIGA process. Using a synchrotron radiation x‐ray source, we have achieved resist patterns over 1000 μm thick. The capability has also been demonstrated for aspect ratios over 10, as well as the ability to print linewidths down to 0.5 μm. © 1995 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
82.50.Kx Processes caused by X-rays or γ-rays

Stress effects in thermal cycling of copper (magnesium) thin films

J. J. Toomey, S. Hymes, and S. P. Murarka

Appl. Phys. Lett. 66, 2074 (1995); http://dx.doi.org/10.1063/1.113907 (3 pages) | Cited 8 times

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The stress in the thin films of pure Cu and Cu (Mg) alloy deposited on oxidized silicon substrates has been measured in the range of room temperature to 500 °C by the use of an in situ laser based curvature measuring tool. Results indicate that small amounts of Mg (∼2–3 at. %) in copper changes the stress‐temperature behavior significantly when compared with that of pure copper. The alloy, after the first annealing cycle which apparently equilibrates the film, shows a predominantly elastic stress‐temperature behavior up to ∼400 °C compared to pure Cu, which shows a departure from linearity at ∼200 °C. Rutherford backscattering and x‐ray diffraction studies were also carried out to elucidate the role of Mg in strengthening the copper film. The results indicate that additions of Mg to Cu increase the mechanical strength of the film and that such behavior is retained in several (subsequent) thermal cycles to 400 °C. © 1995 American Institute of Physics.
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65.40.De Thermal expansion; thermomechanical effects
68.60.-p Physical properties of thin films, nonelectronic
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Measurement of roughness exponent for scale‐invariant rough surfaces using angle resolved light scattering

K. Fang, R. Adame, H.‐N. Yang, G.‐C. Wang, and T.‐M. Lu

Appl. Phys. Lett. 66, 2077 (1995); http://dx.doi.org/10.1063/1.113908 (3 pages) | Cited 7 times

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It is shown that, by modifying the conventional light scattering geometry, it is possible to characterize the root‐mean‐square roughness w in a scale‐invariant rough surface for w values more than one order of magnitude larger than those previously reported. Measurement of w on the order of the wavelength of light has been demonstrated. A consequence of this development is that one can combine the diffraction theory and the measurement to determine the surface roughness exponent α, which was not possible under conventional light scattering conditions. © 1995 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.-d Microscopy of surfaces, interfaces, and thin films

Electron beam deposition of gold nanostructures in a reactive environment

Albert Folch, Javier Tejada, Christopher H. Peters, and Mark S. Wrighton

Appl. Phys. Lett. 66, 2080 (1995); http://dx.doi.org/10.1063/1.113909 (3 pages) | Cited 44 times

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Electron beam deposition (EBD) is a maskless technique suitable for the fabrication of nanometer scale structures. Metals can be deposited from an organometallic gas, but simultaneous carbon deposition typically yields grossly impure (∼25% metal) deposits. We have found that the metal content of the deposited solid is dramatically improved by performing the whole EBD process in a reactive gaseous environment containing a source of oxygen (O2 or H2O) in addition to the organometallic gas. With simple procedures we prepared Au deposits showing significantly diminished C content (up to 50% metal) as the partial pressure of O2 (or H2O) is increased in the gas. © 1995 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
82.50.Kx Processes caused by X-rays or γ-rays
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Stepwise equilibrated graded GexSi1−x buffer with very low threading dislocation density on Si(001)

G. Kissinger, T. Morgenstern, G. Morgenstern, and H. Richter

Appl. Phys. Lett. 66, 2083 (1995); http://dx.doi.org/10.1063/1.113910 (3 pages) | Cited 11 times

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We have grown stepwise equilibrated graded GexSi1−x(x≤0.20) buffers with threading dislocation densities between 102 and 103 cm−2 in their unstrained cap layers. The Ge content of the buffer was increased stepwise. The equilibrating treatment was performed as an in situ annealing in hydrogen at 1050 °C after each and every layer of the buffer. Subsequently, the buffer was grown relaxed layer by relaxed layer. The extreme low threading dislocation density was present on the whole area of 4 in. wafers. © 1995 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology
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