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8 May 1995

Volume 66, Issue 19, pp. 2451-2593

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Self‐organization of strained GaInAs microstructures on InP (311) substrates grown by metalorganic vapor‐phase epitaxy

Richard Nötzel, Jiro Temmyo, Atsuo Kozen, Toshiaki Tamamura, Takashi Fukui, and Hideki Hasegawa

Appl. Phys. Lett. 66, 2525 (1995); http://dx.doi.org/10.1063/1.113155 (3 pages) | Cited 22 times

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The evolution of low‐dimensional microstructures in the growth of strained GaInAs/AlInAs and GaInAs/InP heterostructures on planar InP (311)B and (311)A substrates by metalorganic vapor‐phase epitaxy is investigated by atomic force microscopy. The surface structures are found to be similar to those previously reported for GaAs (311)B and (311)A substrates. In particular, the appearance of zero‐dimensional microstructures in the GaInAs/AlInAs system on InP (311)B substrates is analogous to the self‐organizing formation of buried InGaAs quantum disks in the case of GaAs (311)B substrates. © 1995 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Low temperature epitaxial silicon film growth using high vacuum electron‐cyclotron‐resonance plasma deposition

Scott J. DeBoer, Vikram L. Dalal, George Chumanov, and Randy Bartels

Appl. Phys. Lett. 66, 2528 (1995); http://dx.doi.org/10.1063/1.113156 (3 pages) | Cited 22 times

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We report on the growth technique and electrical properties of epitaxial Si films grown at low temperatures using an electron‐cyclotron‐resonance plasma deposition technique. We have used standard high vacuum apparatus to grow high quality films at 450–525 °C. A critical step in achieving high quality films is an in situ hydrogen plasma cleaning of the wafer before growth. We have systematically studied the influence of ion bombardment during growth by biasing the substrate, and find that the films are crystalline for substrate bias voltages less negative than about −15 V, but become polycrystalline as the magnitude of the negative bias is increased. The crystallinity of the film was measured using Raman spectroscopy. The undoped films are n type with carrier concentrations in the 1016–1017 cm−3 range. The Hall mobilities measured for the films are comparable to values obtained in bulk Si crystals. We can achieve abrupt profiles in carrier concentrations between the heavy doped substrate and the epilayer, with no evidence of diffusion. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors

Liquid phase epitaxial growth of high quality GaAs on InP using Se‐doped GaAs buffer layer and grating‐patterned substrates

Dong‐Keun Kim, Ju‐Heon Ahn, Byung‐Teak Lee, H. J. Lee, S. S. Cha, K. Y. Lim, J. B. Kim, J.‐L. Lee, S. J. Jang, and I.‐S. Park

Appl. Phys. Lett. 66, 2531 (1995); http://dx.doi.org/10.1063/1.113157 (3 pages) | Cited 3 times

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High quality GaAs layers with excellent crystal quality and surface morphology were grown on InP substrates (GaAs/InP) using liquid phase epitaxy. Thin GaAs buffer layers heavily doped with Se were utilized to prevent the substrate meltback and the InP substrates patterned with gratings to reduce the dislocation density. Double crystal x‐ray diffraction showed about 230 arcsec full width at half maximum of the (400) reflection, which represents significant improvement compared to the previously reported 350 arcsec of the GaAs/InP layer grown by chemical beam epitaxy using strained superlattice buffer layers. © 1995 American Institute of Physics.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.-a Thin film structure and morphology

Near‐band‐edge absorption and positron trapping under illumination in semi‐insulating GaAs: Role of As vacancies

C. Le Berre, C. Corbel, R. Mih, M. R. Brozel, S. Tüzemen, S. Kuisma, K. Saarinen, P. Hautojärvi, and R. Fornari

Appl. Phys. Lett. 66, 2534 (1995); http://dx.doi.org/10.1063/1.113158 (3 pages) | Cited 7 times

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We show that positron trapping at negative As vacancies revealed under illumination in bulk semi‐insulating GaAs correlates with a form of near‐band‐edge absorption known as reverse contrast (RC). We conclude that it is the ionization of As vacancies to their negative charge state that gives rise to RC absorption. © 1995 American Institute of Physics.
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61.72.J- Point defects and defect clusters
71.55.Eq III-V semiconductors
78.70.Bj Positron annihilation

Midinfrared lead salt multi‐quantum‐well diode lasers with 282 K operation

Z. Shi, M. Tacke, A. Lambrecht, and H. Böttner

Appl. Phys. Lett. 66, 2537 (1995); http://dx.doi.org/10.1063/1.113159 (3 pages) | Cited 27 times

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IV‐VI multiple‐quantum‐well lasers with seven wells made from molecular‐beam‐epitaxy grown PbSe/PbSrSe have been operated in pulsed mode up to 282 K at a wavelength of λ=4.2 μm. This is the highest midinfrared quantum well laser operation temperature observed to date. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Light emission in reverse bias operation from poly(3‐octylthiophene)‐based light emitting diodes

F. Garten, A. R. Schlatmann, R. E. Gill, J. Vrijmoeth, T. M. Klapwijk, and G. Hadziioannou

Appl. Phys. Lett. 66, 2540 (1995); http://dx.doi.org/10.1063/1.113160 (3 pages) | Cited 23 times

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We report light emission from light emitting diodes with poly(3‐octylthiophene) (P3OT) as the active layer in both forward and reverse bias operation. The onset of electroluminescence (EL) of ITO/P3OT/Al devices occurs at current densities of 6.25×10−4 A/cm2 in both modes of operation; both cases show identical EL spectra. For a P3OT thickness of 100 nm the onset of electroluminescence and current occurs at 3 V in the forward bias mode, and at about 18 V in the reverse mode of operation, at which a completely different voltage dependence of the current is observed. In the reverse mode of operation, the data suggest that carrier injection is a tunneling process through a triangular barrier of 0.4 eV at the metal–polymer interface. In the forward bias a Schottky‐like behavior is seen. © 1995 American Institute of Physics.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
73.40.Sx Metal-semiconductor-metal structures

Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance

Y. F. Chen, J. L. Shen, Y. D. Dai, G. J. Jan, and H. H. Lin

Appl. Phys. Lett. 66, 2543 (1995); http://dx.doi.org/10.1063/1.113161 (3 pages) | Cited 5 times

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We report an investigation of optical and electronic properties in InAlAs/InGaAs heterojunction bipolar transistor layers by optical detection of cyclotron resonance (ODCR). Strong ODCR spectra structured by quantum oscillations have been observed, from which the effective mass and the carrier concentration of the two‐dimensional electron gas can be obtained. The measured cyclotron mass is heavier than the conduction‐band‐edge mass in bulk InGaAs. We find that the carrier concentration increases with the spacer thickness. Quite unexpectedly, we also find that the effective mass increases with decreasing the carrier concentration. © 1995 American Institute of Physics.
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85.30.Pq Bipolar transistors
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Infrared measurements in annealed molecular beam epitaxy GaAs grown at low temperature

N. Hozhabri, S.‐H. Lee, and K. Alavi

Appl. Phys. Lett. 66, 2546 (1995); http://dx.doi.org/10.1063/1.113162 (3 pages) | Cited 10 times

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We have utilized an infrared absorption technique to study deep level defects in molecular beam epitaxy GaAs grown at 250 °C. From an observed broad absorption band below the conduction edge, the concentration of defects is estimated to be ≊5×1019 cm−3 in an as‐grown sample. The concentration of defects decreases exponentially by one order of magnitude due to annealing of the sample at temperatures of 400–500 °C. From the temperature dependence of the defect concentration, the migration energy of defects is calculated to be 0.52±0.02 eV. The measured migration energy shows that part of the defects are arsenic interstitials. © 1995 American Institute of Physics.
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61.72.J- Point defects and defect clusters
71.55.Eq III-V semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
61.72.Cc Kinetics of defect formation and annealing

Molecular beam epitaxy regrowth using a thin In layer for surface passivation

C. K. Peng, S. L. Tu, S. S. Chen, and C. C. Lin

Appl. Phys. Lett. 66, 2549 (1995); http://dx.doi.org/10.1063/1.113163 (3 pages) | Cited 7 times

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We report a molecular beam epitaxy regrowth technique using a thin In layer for surface passivation. X‐ray photoemission spectroscopy measurements show that an In layer as thin as a few tenths of an angstrom is adequate for the effective protection of the underlying III‐V epilayers from carbon and oxygen contamination, while still providing exposure to the atmosphere. C–V depth profilings of the regrown pseudomorphic high electron mobility transistors (PHEMTs) reveal no significant residual charge carriers near the regrowth interface. The regrown PHEMTs with 1 μm gate length have a transconductance as high as 330 mS/mm and ft over 23 GHz. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Electroluminescence from porous silicon due to electron injection from solution

E. S. Kooij, R. W. Despo, and J. J. Kelly

Appl. Phys. Lett. 66, 2552 (1995); http://dx.doi.org/10.1063/1.113164 (3 pages) | Cited 4 times

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We report on the electroluminescence from p‐type porous silicon due to minority carrier injection from an electrolyte solution. The MV+• radical cation formed in the reduction of divalent methylviologen is able to inject electrons into the conduction band of crystalline and porous silicon. The electrochemistry of this redox process at silicon electrodes is briefly described, and electroluminescence due to recombination of the injected electrons with holes from the substrate is described. The results are discussed in terms of a semiconductor model. © 1995 American Institute of Physics.
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78.60.Fi Electroluminescence
73.40.Mr Semiconductor-electrolyte contacts

Real‐time thickness control of resonant‐tunneling diode growth based on reflection mass spectrometry

F. G. Celii, T. B. Harton, Y.‐C. Kao, and T. S. Moise

Appl. Phys. Lett. 66, 2555 (1995); http://dx.doi.org/10.1063/1.113165 (3 pages) | Cited 7 times

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We used reflection mass spectrometry (REMS) to control the molecular beam epitaxial growth of resonant‐tunneling diode (RTD) structures. The REMS‐based thickness value controlled the effusion cell shutter actuation, and compensated in real time for flux transients and short‐term flux drift. Use of REMS control during deposition of AlAs, InAs, and InGaAs layers resulted in improved symmetry and reproducibility of the RTD I‐V characteristics, compared with time‐based, dead‐reckoning growth. REMS‐based control for flux compensation during growth of GaAs/AlGaAs multi‐quantum‐well structures is also reported. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Semi‐insulating InP grown by chemical beam epitaxy with pentacarbonyliron doping

J. D. Walker and W. T. Tsang

Appl. Phys. Lett. 66, 2558 (1995); http://dx.doi.org/10.1063/1.113166 (3 pages) | Cited 1 time

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We present semi‐insulating iron‐doped InP grown by chemical beam epitaxy using the gaseous source pentacarbonyliron, Fe(CO)5. Analysis by secondary ion mass spectroscopy shows that iron incorporation is proportional to the Fe(CO)5 flow rate over the 5×1017–5×1019 cm−3 range studied. Use of Fe(CO)5 as an iron source also leads to high ∼1018 cm−3 carbon incorporation in the material, but this does not interfere with semi‐insulating behavior. The material shows 30 MΩ cm resistivity for a broad range of Fe(CO)5 flow rates. No oxygen incorporation was observed © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
61.72.uj III-V and II-VI semiconductors

Meandering grain boundaries in YBa2Cu3Oy bi‐crystal thin films

D. J. Miller, T. A. Roberts, J. H. Kang, J. Talvacchio, D. B. Buchholz, and R. P. H. Chang

Appl. Phys. Lett. 66, 2561 (1995); http://dx.doi.org/10.1063/1.113167 (3 pages) | Cited 43 times

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Artificially induced [001] tilt grain boundaries in epitaxial YBa2Cu3Oy (YBCO) thin films were prepared by deposition onto SrTiO3 bi‐crystal substrates and subsequently examined by transmission electron microscopy and atomic force microscopy (AFM). It was found that the YBCO grain boundary deviated from the path defined by the underlying substrate boundary, with the ‘‘meandering’’ YBCO boundary only generally following the path defined by the boundary in the underlying substrate. The AFM studies suggest this ‘‘meandering’’ behavior is related to the nucleation and growth mechanisms of the film, and based on this, we were able to vary the magnitude of the meandering by changing the growth conditions. The implications of this meandering behavior are significant, suggesting potential variations in electrical behavior from point to point along these boundaries. This effect is likely to be exacerbated by reduced junction linewidths and may lead to inconsistent behavior in devices which utilize this type of boundary. © 1995 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
61.72.Mm Grain and twin boundaries

Superconductivity and gaint negative magnetoresistance in YBa2Cu3O7/La0.67Ba0.33MnO3 superlattices

G. Jakob, V. V. Moshchalkov, and Y. Bruynseraede

Appl. Phys. Lett. 66, 2564 (1995); http://dx.doi.org/10.1063/1.113168 (3 pages) | Cited 50 times

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It is shown that the recently discovered giant negative magnetoresistance (GMR) effects in ferromagnetic La1−xMxMnO3 (M=Ca,Sr,Ba) are compatible with the existence of high Tc superconductivity in c‐axis oriented YBa2Cu3O7/La0.67Ba0.33MnO3 superlattices. From magnetoresistivity measurements we deduce that above Tc the giant GMR persists up to room temperature. Below Tc the superlattices show a quasi‐two‐dimensional superconductivity of the YBa2Cu3O7 layers coexisting with magnetism in the La0.67Ba0.33MnO3 layers. © 1995 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.78.Fk Multilayers, superlattices, heterostructures
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

Damping effect on the radio frequency induced voltage steps in a Josephson tunnel junction

Kyu‐Tae Kim and Jürgen Niemeyer

Appl. Phys. Lett. 66, 2567 (1995); http://dx.doi.org/10.1063/1.113503 (3 pages) | Cited 3 times

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The phase‐lock stability of a Josephson tunnel junction to the external rf frequency (ω1) is the most important feature of the Josephson voltage standard. The junction plasma frequency (ωP) should be much lower than ω1 to avoid any chaotic instability. But we found that the moderate junction damping can support the phase‐lock stability so that a larger step size reaching the Bessel function values can be achieved even in the region where ωP≂ω1. Measurements of a moderately damped tunnel junction confirm the simulation results. © 1995 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
74.25.N- Response to electromagnetic fields
85.25.Cp Josephson devices
06.20.F- Units and standards

Transport critical‐current characteristics of (Bi,Pb)2Sr2Ca2Cu3Ox silver‐sheathed pressed and rolled tapes

Yuping Sun, Jiaju Du, Zi Lu, Guoyang Xu, Yuheng Zhang, Zhenzhong Duan, Xiande Tang, Zhengping Xi, and Lian Zhou

Appl. Phys. Lett. 66, 2570 (1995); http://dx.doi.org/10.1063/1.113504 (3 pages) | Cited 3 times

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We have measured the dependence of the transport critical‐current density on magnetic fields and temperatures close to Tc of high‐Jc Bi(2223) Ag‐sheathed pressed (Jc=2.1×104 A/cm2, 77 K, 0 T) and cold rolled tapes (Jc=1.8×104 A/cm2, 77 K, 0 T). It is found that the transport critical current of the two kinds of tapes follows the relation Jc=Jco (1−αT+βT2). The results can be explained according to the thermally activated flux creep model. The dependence of Jc on H for two kinds of tapes is compared as H is parallel and perpendicular to the tape surface. It is found that the cold rolled tapes have a weaker field dependence of Jc for the H⊥ tape surface at higher fields (≳0.2 T). The difference of Jc(H) between the pressed and cold rolled tapes seems to originate from the difference in their microstructure defects. © 1995 American Institute of Physics.
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84.71.Mn Superconducting wires, fibers, and tapes
74.25.Sv Critical currents
74.72.-h Cuprate superconductors

Formation of a strongly coupled YBa2Cu3Ox domain by the melt‐joining method

Donglu Shi

Appl. Phys. Lett. 66, 2573 (1995); http://dx.doi.org/10.1063/1.113505 (3 pages) | Cited 15 times

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A method was developed to melt join two YBa2Cu3Ox domains together. After melt joining, the scanning electron microscopy analysis did not reveal any interfaces near the original domain contact surfaces. Both samples with equal geometry and orientation before and after the melt‐joining process exhibited the same magnetic hysteresis, indicating that the melt‐joined sample was strongly coupled. Also discussed is a possible domain growth mechanism during the melt‐joining process. © 1995 American Institute of Physics.
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81.20.-n Methods of materials synthesis and materials processing
84.71.Ba Superconducting magnets; magnetic levitation devices
74.72.-h Cuprate superconductors

Current–voltage characteristics of dc voltage biased high temperature superconducting microbridges

G. Darcy Poulin, Jean Lachapelle, Steven H. Moffat, Frank A. Hegmann, and John S. Preston

Appl. Phys. Lett. 66, 2576 (1995); http://dx.doi.org/10.1063/1.113506 (3 pages) | Cited 16 times

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We have investigated the dc current–voltage characteristic of high temperature superconducting microbridges. When a dc voltage is applied to a microbridge, it switches to a lossy state due to the formation of a hotspot in the bridge. We have measured the length and temperature of the hotspot as a function of the applied voltage, and have developed a thermal model to explain its steady state behavior. The hotspot has a flat‐topped temperature profile, with the maximum temperature independent of the applied voltage. The length of the hotspot, and hence the bridge resistance, increases linearly with the applied bias, so the current is independent of the applied voltage once switching has occurred. © 1995 American Institute of Physics.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
74.78.-w Superconducting films and low-dimensional structures
74.25.F- Transport properties

Perpendicular current magnetoresistance in Co/Cu/NiFeCo/Cu multilayered microstructures

W. Vavra, S. F. Cheng, Anita Fink, J. J. Krebs, and G. A. Prinz

Appl. Phys. Lett. 66, 2579 (1995); http://dx.doi.org/10.1063/1.113507 (3 pages) | Cited 16 times

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An approach is demonstrated for lithographic fabrication of perpendicular current magnetoresistance devices which avoids the necessity of postprocess ‘‘trimming’’ of electrical leads. Magnetoresistance properties are investigated as a function of device size, magnetic layer thickness, and temperature. It is found that in some cases the current distribution in the microstructures change substantially with temperature resulting in a negative temperature coefficient of resistivity. It is also shown that the devices’ own magnetic fields have a dramatic effect on magnetoresistance properties. © 1995 American Institute of Physics.
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72.15.Gd Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Magnetic force microscopy of the submicron magnetic assembly in a magnetotactic bacterium

R. B. Proksch, T. E. Schäffer, B. M. Moskowitz, E. D. Dahlberg, D. A. Bazylinski, and R. B. Frankel

Appl. Phys. Lett. 66, 2582 (1995); http://dx.doi.org/10.1063/1.113508 (3 pages) | Cited 51 times

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A magnetic force microscope (MFM) was used to image topography and magnetic forces from a chain of submicron single magnetic domain particles produced by and contained in isolated magnetotactic bacteria. The noncontact magnetic force microscope data were used to determine a value for the magnetic moment of an individual bacterial cell, of order 10−13 emu, consistent with the average magnetic moment of bacteria from the same sample, obtained by superconducting quantum interference device magnetometry. The results represent the most sensitive quantification of a magnetic force microscope image to date. © 1995 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.79.Pk Magnetic force microscopes
75.50.Tt Fine-particle systems; nanocrystalline materials

Submicron studies of recording media using thin‐film magnetic scanning probes

Scott Manalis, Kenneth Babcock, James Massie, Virgil Elings, and Matthew Dugas

Appl. Phys. Lett. 66, 2585 (1995); http://dx.doi.org/10.1063/1.113509 (3 pages) | Cited 34 times

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We present a technique for measuring the coercivity of magneto‐optical and perpendicular recording media on a submicron scale using a magnetic force microscope and an electromagnet. Co–Cr coated silicon tips were used to write and image magnetic bits down to 150 nm in diameter. Bits were written when the sum of the tip stray field and an external field Hext exceeded the local, or ‘‘point’’ coercivity. Media can be characterized by a continuous write probability Pw(Hext) which differs significantly from bulk hysteresis loops. For an intermediate field range, writing was intermittent (0<Pw<1) due to spatial variations in media properties. © 1995 American Institute of Physics.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
85.70.Li Other magnetic recording and storage devices (including tapes, disks, and drums)

Application of single electron tunneling: Precision capacitance ratio measurements

Alan F. Clark, Neil M. Zimmerman, Edwin R. Williams, A. Amar, Dian Song, F. C. Wellstood, C. J. Lobb, and R. J. Soulen

Appl. Phys. Lett. 66, 2588 (1995); http://dx.doi.org/10.1063/1.113510 (3 pages) | Cited 10 times

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A metrological application is reported of the single electron tunneling (SET) phenomena: a precise measurement of the ratio of two cryogenic capacitors. The measurement used a superconducting SET electrometer as the null detector for a capacitance bridge. A 3‐ppm level of imprecision has been achieved in the measurement of the capacitance ratio from 100 to 1000 Hz. Further improvements can be made in the attempt to obtain an imprecision of 10−8 at lower frequencies, sufficient for the metrological measurement of capacitance or the fine‐structure constant using a SET pump. © 1995 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
73.40.Gk Tunneling
73.40.Rw Metal-insulator-metal structures
06.20.-f Metrology

Study of photochemical reaction from C70 adsorbed on silver film by surface enhanced Raman scattering

Yujun Mo, Giorgio Mattei, Mario Pagannone, and Sishen Xie

Appl. Phys. Lett. 66, 2591 (1995); http://dx.doi.org/10.1063/1.113511 (3 pages) | Cited 6 times

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We have measured by micro‐Raman spectroscopy the surface enhanced Raman scattering (SERS) spectra of about 2 monolayers of C70 on Ag surface. New Raman bands of the fullerene molecule have been found. The time evolution (from C70 to amorphous carbon) of the SERS spectra, under high laser power density illumination in air, provides evidence of photochemical reactions. New bands in the Raman spectra appearing with the time have been attributed to intermediate products of these photochemical reactions. © 1995 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
78.30.Hv Other nonmetallic inorganics
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