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15 May 1995

Volume 66, Issue 20, pp. 2605-2756

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Experimental evidence of slow dynamics in amorphous metal using fiber‐optic interferometry

D. M. Dagenais and F. Bucholtz

Appl. Phys. Lett. 66, 2605 (1995); http://dx.doi.org/10.1063/1.113098 (3 pages)

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New results on the study of slow dynamics in ferromagnetic amorphous alloys are presented. Experimental evidence has been obtained of low‐frequency relaxation phenomena in highly magnetostrictive amorphous alloys submitted to various anneal treatments. Dynamics of the amplitude and phase of intrinsic magnetic noise in the metallic glass Metglas 2605S‐2 have been measured with a fiber‐optic interferometer. © 1995 American Institute of Physics.
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75.80.+q Magnetomechanical effects, magnetostriction
75.50.Kj Amorphous and quasicrystalline magnetic materials

Fabrication of an InGaAs single quantum well circular ring laser by direct laser patterning

M. C. Shih, M. H. Hu, M. B. Freiler, M. Levy, R. Scarmozzino, R. M. Osgood, I. W. Tao, and W. I. Wang

Appl. Phys. Lett. 66, 2608 (1995); http://dx.doi.org/10.1063/1.113099 (3 pages) | Cited 10 times

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The fabrication of single quantum well (SQW) ridge waveguide ring laser in strained InGaAs is described which utilizes direct‐write laser lithography followed by cryogenic UV laser‐assisted etching. The laser has a threshold current of 270 mA and emits ∼14 mW of single‐frequency output. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Simple microsecond YAlO3:Nd laser

K. M. Pokhsrarian

Appl. Phys. Lett. 66, 2611 (1995); http://dx.doi.org/10.1063/1.113100 (2 pages)

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A simple technique for variable microsecond (1.5–5 μms) pulse generation with neodymium laser has been demonstrated using a laser cavity with a rotating mirror and amplifier configuration. Pulse energies up to 0.5 J have been achieved. © 1995 American Institute of Physics.  
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.-v Laser optical systems: design and operation

Analysis of T0 in 1.3 μm multi‐quantum‐well and bulk active lasers

D. A. Ackerman, P. A. Morton, G. E. Shtengel, M. S. Hybertsen, R. F. Kazarinov, T. Tanbun‐Ek, and R. A. Logan

Appl. Phys. Lett. 66, 2613 (1995); http://dx.doi.org/10.1063/1.113101 (3 pages) | Cited 19 times

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Temperature dependence of threshold in 1.3 μm semiconductor lasers is analyzed in terms of contributions due to gain, internal efficiency, internal loss, and nonradiative recombination. Rapid decrease of differential gain and roughly proportional increase in transparency carrier density are determined to dominate temperature dependence of threshold current. Auger recombination is found to play a secondary role in reducing T0 by compounding the effects of rapidly increasing threshold carrier density. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Modal analysis of a small surface emitting laser with a selectively oxidized waveguide

K. L. Lear, K. D. Choquette, R. P. Schneider, and S. P. Kilcoyne

Appl. Phys. Lett. 66, 2616 (1995); http://dx.doi.org/10.1063/1.113102 (3 pages) | Cited 52 times

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We describe studies of an index‐guided ∼4×3 μm2 vertical cavity surface emitting laser with a cw, room temperature 133 μA threshold current and 53% slope efficiency fabricated using selective wet thermal oxidation to provide optical and electrical confinement. While the device operates strictly single mode, a large number of transverse modes are evident in the subthreshold luminescence observed in both vertical and lateral directions. Despite the lumped nature of the index region, the transverse mode wavelengths agree very well with those predicted for a conventional distributed waveguide structure. Waveguide dimensions and an effective index step of 2% between the active and cladding region are determined by fitting the modal data. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Highly nondegenerate four‐wave mixing efficiency of an asymmetric coupled quantum well structure

Roberto Paiella and Kerry J. Vahala

Appl. Phys. Lett. 66, 2619 (1995); http://dx.doi.org/10.1063/1.113103 (3 pages) | Cited 4 times

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An asymmetric coupled quantum well structure is theoretically investigated as a means of tailoring the conversion efficiency of the four‐wave mixing process at terahertz detuning rates. In this structure, a coherent electronic oscillation between the two wells can be excited that introduces a resonance peak in the four‐wave mixing frequency response. A calculation based on the density matrix formalism shows that an increase in the power conversion efficiency on the order of 10 dB can be attained at the selected resonance frequency for low temperature operation. Finally, we propose a novel technique for exciting the interwell oscillations that takes advantage of the polarization dependence of the interband optical transitions in alternating strain quantum wells. © 1995 American Institute of Physics.
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78.66.-w Optical properties of specific thin films
78.47.-p Spectroscopy of solid state dynamics
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Frequency doubled diode‐pumped pulse compressed additive‐pulse mode‐locked Nd3+ doped lithium yttrium fluoride laser producing 250 fs duration pulses

A. Robertson, N. Langford, and A. I. Ferguson

Appl. Phys. Lett. 66, 2622 (1995); http://dx.doi.org/10.1063/1.113104 (3 pages)

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The frequency doubling and subsequent pulse compression of pulses from an additive‐pulse mode‐locked Nd:YLF laser have been reported. Pulses as short as 245 fs with an average power of 140 mW corresponding to a peak power of 4 kW at 523.5 nm are generated using a simple fiber‐grating pulse compressor. © 1995 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Debris‐free single‐line laser‐plasma x‐ray source for microscopy

L. Rymell, M. Berglund, and H. M. Hertz

Appl. Phys. Lett. 66, 2625 (1995); http://dx.doi.org/10.1063/1.113105 (3 pages) | Cited 33 times

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A debris‐free, narrow‐bandwidth, single‐line laser‐plasma soft x‐ray source has been developed suitable for water‐window microscopy using zone‐plate optics. The 10 Hz table‐top source utilizes microscopic ammonium hydroxide droplets as target. The N VI emission at λ=2.88 nm is ∼1×1012 photons/(sr pulse). As an alternative to ammonium hydroxide, it is demonstrated that urea dissolved in water also produces strong emission from nitrogen ions, thereby extending the applicability of the droplet x‐ray source to a new range of target materials. © 1995 American Institute of Physics.
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07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
87.64.Bx Electron, neutron and x-ray diffraction and scattering

Single‐mode/multimode waveguide electro‐optic grating coupler modulator

Michael R. Wang, Guoda Xu, Freddie Lin, and Tomasz Jannson

Appl. Phys. Lett. 66, 2628 (1995); http://dx.doi.org/10.1063/1.113106 (3 pages)

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A waveguide electro‐optic grating coupler modulator based on a single straight channel waveguide and an interdigital modulation electrode structure on an electro‐optic substrate, has been reported. Both single‐mode and multimode operations are possible. Preliminary experiments have demonstrated the modulation on a proton exchanged LiNbO3 waveguide device. Modulation performed on other electro‐optic waveguides, such as GaAs, LiTaO3, and EO polymers, are also possible. © 1995 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays

Poled electro‐optic photolime gel polymer doped with chlorophenol red and bromomethyl blue chromophores

Dave Gerold, Ray T. Chen, William A. Farone, and David Pelka

Appl. Phys. Lett. 66, 2631 (1995); http://dx.doi.org/10.1063/1.113107 (3 pages) | Cited 2 times

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An electro‐optic polymer with chlorophenol red dye and type‐A photolime gel was demonstrated. The electro‐optic coefficient γ33 in the direction of the poling field was measured to be 28 pm/V. Chlorophenol red in polymer showed a 1/e relaxation time constant of 820 h, which is more stable than other dye demonstrated previously to be electro‐optic in the same polymer. © 1995 American Institute of Physics.
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42.70.Jk Polymers and organics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Jq Electro-optical effects

Chemical downstream etching of silicon–nitride and polycrystalline silicon using CF4/O2/N2: Surface chemical effects of O2 and N2 additives

J. J. Beulens, B. E. E. Kastenmeier, P. J. Matsuo, and G. S. Oehrlein

Appl. Phys. Lett. 66, 2634 (1995); http://dx.doi.org/10.1063/1.113108 (3 pages) | Cited 13 times

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By comparing the etching characteristics of silicon and silicon nitride in CF4/O2/N2 microwave downstream plasmas we demonstrate clearly how low concentrations of energetic species can play a dominant role in remote plasma processing: Injection of 5% N2 to a CF4/O2 plasma increases the silicon nitride etch rate by a factor of 7, while not significantly affecting the bulk composition of the discharge. Downstream injection of N2 is ineffective. Using surface spectroscopies we directly show a dramatic enhancement of the reactivity of fluorine and oxygen atoms with silicon and silicon–nitride surfaces upon N2 injection to the discharge. Our results can be explained by the production of energetic metastable species in the discharge region which transport energy to the gas‐surface interface. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

Time‐resolved Balmer‐alpha emission from fast hydrogen atoms in low pressure, radio‐frequency discharges in hydrogen

S. B. Radovanov, K. Dzierżȩga, J. R. Roberts, and J. K. Olthoff

Appl. Phys. Lett. 66, 2637 (1995); http://dx.doi.org/10.1063/1.113109 (3 pages) | Cited 35 times

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Doppler‐broadened Hα emission (656.28 nm) detected from a 13.56 MHz, parallel‐plate, radio‐frequency discharge in hydrogen indicates the presence of fast excited H atoms throughout the discharge volume. Time and spatially resolved measurements of the Doppler‐broadened emission indicate that the fast H atoms are formed primarily at the surface of the powered electrode with kinetic energies exceeding 120 eV.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
52.80.Pi High-frequency and RF discharges

Superhard nanocrystalline composite materials: The TiN/Si3N4 system

S. Vepřek, S. Reiprich, and Li Shizhi

Appl. Phys. Lett. 66, 2640 (1995); http://dx.doi.org/10.1063/1.113110 (3 pages) | Cited 217 times

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Thin films of novel superhard composite materials consisting of TiN nanocrystals in an amorphous Si3N4 matrix have been prepared by means of plasma chemical vapor deposition. The films show a high Vickers hardness of 5000 kg/mm2 and elastic modulus of ≳500 GPa, and they are resistant against oxidation in air up to ≥800 °C. The theoretical background of these unusual properties are briefly discussed and practical rules suggested according to which similar properties should be expected for composites of other ternary systems. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.Bs Mechanical and acoustical properties

Preparation of (100)‐oriented metallic LaNiO3 thin films on Si substrates by radio frequency magnetron sputtering for the growth of textured Pb(Zr0.53Ti0.47)O3

Ching‐Chyuan Yang, Ming‐Sen Chen, Tian‐Jue Hong, Chii‐Ming Wu, Jenn‐Ming Wu, and Tai‐Bor Wu

Appl. Phys. Lett. 66, 2643 (1995); http://dx.doi.org/10.1063/1.113111 (3 pages) | Cited 86 times

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Highly (100)‐oriented LaNiO3(LNO) thin films were grown on Si, SiO2/Si, Pt/SiSiO2/Si, as well as glass substrates by rf magnetron sputtering deposition at substrate temperatures ranging from 150 to 500 °C. As‐deposited LNO films are metallic; those prepared at substrate temperature ∼150–250 °C have a resistivity of 0.4–0.5 mΩ cm and can be used as the bottom electrode for the fabrication of integrated ferroelectric capacitors on Si. A subsequent deposition of sol‐gel derived Pb(Zr0.53Ti0.47)O3 (PZT) thin film on the LNO‐coated substrate was also found to have a significant (100)‐ and (001)‐oriented texture. The ferroelectric capacitor fabricated from these films displays a good P–E hysteresis characteristic. © 1995 American Institute of Physics.
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81.15.Cd Deposition by sputtering
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

SiC buried layer formation by ion beam synthesis at 950 °C

A. Nejim, P. L. F. Hemment, and J. Stoemenos

Appl. Phys. Lett. 66, 2646 (1995); http://dx.doi.org/10.1063/1.113112 (3 pages) | Cited 30 times

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Carbon implantation into Si at a temperature of 950 °C and at doses in the range of 0.2×1018 to 1×1018 cm−2 at 200 keV results in the formation of β‐SiC buried layers having the same orientation as the Si matrix. Under these conditions redistribution of the implanted species occurs enabling the formation of a buried layer of β‐SiC with an overlayer of high quality single crystal Si which is free of structural defects. The quality of the Si overlayer and the β‐SiC buried layer was investigated by Rutherford backscattering and transmission electron microscopy. A mechanism for the formation of the β‐SiC without the generation of defects in the Si matrix is proposed. © 1995 American Institute of Physics.
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61.80.Jh Ion radiation effects

Contrast reversal of antiparallel domains in Cu‐doped (Ba0.25Sr0.75)0.9(K0.5Na0.5)0.2Nb2O6 single crystal with synchrotron topography

X. R. Huang, S. S. Jiang, W. Zeng, X. B. Hu, W. J. Liu, D. Feng, H. C. Chen, Q. Z. Jiang, J. H. Jiang, and Z. G. Wang

Appl. Phys. Lett. 66, 2649 (1995); http://dx.doi.org/10.1063/1.113113 (3 pages) | Cited 6 times

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Synchrotron‐radiation topographic observations have shown that the Cu‐doped (Ba0.25Sr0.75)0.9(K0.5Na0.5)0.2Nb2O6 crystal has a strong ferroelectric x‐ray anomalous‐scattering effect at the wavelength near the absorption edge of Ba atoms. The reversal of anomalous contrast of antiparallel domains in the crystal was directly revealed in the topographs of hkl and hkl reflections. It was found that the domain walls are all polar and are formed to compensate the charges resulting from the inhomogeneous distributions of the metal atoms in the bulk crystal. © 1995 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.

Reactive pulsed laser deposition of CNx films

X.‐A. Zhao, C. W. Ong, Y. C. Tsang, Y. W. Wong, P. W. Chan, and C. L. Choy

Appl. Phys. Lett. 66, 2652 (1995); http://dx.doi.org/10.1063/1.113114 (3 pages) | Cited 96 times

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Carbon nitride (CNx) films were prepared by reactive pulsed laser deposition at nitrogen partial pressure PN2varying from 0 to 300 mTorr. It is found that the atomic fraction of nitrogen f in the films first increases with increasing PN2, reaches a maximum of 0.32 at PN2=100 mTorr, and then decreases to a saturated value of 0.26 at PN2≳200 mTorr. Because of the absence of energetic particles in reactive pulsed laser deposition, the limited nitrogen content cannot be attributed to preferential sputtering of nitrogen that is generally observed in particle‐assisted deposition of CNx films. Infrared absorption experiments show the existence of C≡N bonds and graphitic sp2 bonds. The sp2 bonds become IR active because of symmetry breaking of graphitic rings as a consequence of nitrogen incorporation. CNx films deposited at low PN2 (e.g., 5 mTorr) are more graphitic than the diamondlike pure carbon sample deposited at PN2=0, so have a slightly narrower electron band gap Eopt and a significantly higher room‐temperature electrical conductivity σR. At PN2≳200 mTorr, nitrogenation of the films is very pronounced, leading to a wide band gap (Eopt≳1.5 eV), long electron band tail (E0≳0.7 eV), and extremely low σR(<1×10−13 Ω−1 cm−1). In addition, both the hardness and Young’s modulus are greatly reduced, for example, from 41.3 and 285 GPa for the pure carbon sample to 1.2 and 23.8 GPa, respectively, at f=0.32. © 1995 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
78.30.Hv Other nonmetallic inorganics
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.60.Bs Mechanical and acoustical properties

Dimensional limitations of silicon nanolines resulting from pattern distortion due to surface tension of rinse water

Hideo Namatsu, Kenji Kurihara, Masao Nagase, Kazumi Iwadate, and Katsumi Murase

Appl. Phys. Lett. 66, 2655 (1995); http://dx.doi.org/10.1063/1.113115 (3 pages) | Cited 43 times

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In a nanometer‐scale regime, high‐aspect‐ratio Si lines running in parallel bend plastically toward each other during the drying process after being rinsed in water. Pattern distortion occurs when the line distance is smaller than the product of the squared aspect ratio and a constant k dependent on the condition of the Si surface, i.e., (distance)<k×(aspect ratio)2. This relationship can be derived theoretically on the assumption that water remains between lines and the water pressure is reduced due to the surface tension of water. © 1995 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Reactions of divalent Ge in hydrogen loaded germanosilicate optical fibers: Identification of a new monohydride defect

Bulin Zhang and Krishnan Raghavachari

Appl. Phys. Lett. 66, 2658 (1995); http://dx.doi.org/10.1063/1.113116 (3 pages) | Cited 1 time

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Microscopic mechanisms for the reactions of H2 with divalent Ge defects in hydrogen loaded germanosilicate optical fibers have been studied by ab initio quantum chemical techniques. The reaction with the lowest energy barrier corresponds to H2 breaking a Ge–O bond at the divalent Ge site forming a –Ge–H bond. Alternatively, H2 addition yielding a dihydride followed by hydrogen migration from Ge to an adjacent O also leads to this –Ge–H defect. We have assigned the vibrational frequency corresponding to this –Ge–H defect to a previously observed, but unassigned, Raman mode at 1875 cm−1. The reverse reaction barrier is very small, indicating that this –Ge–H defect is likely to be easily bleached at higher temperatures. © 1995 American Institute of Physics.
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42.70.Ce Glasses, quartz
61.72.Cc Kinetics of defect formation and annealing
78.30.Hv Other nonmetallic inorganics

Growth of (111) oriented MgO film on Si substrate by the sol‐gel method

Jong‐Gul Yoon and Kun Kim

Appl. Phys. Lett. 66, 2661 (1995); http://dx.doi.org/10.1063/1.113117 (3 pages) | Cited 24 times

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Growth and structural evolution of a MgO thin film fabricated on Si substrate by using sol‐gel method were investigated. Textured MgO films displaying (111) MgO∥(100)Si  and (111)MgO∥(111)Si orientations were obtained. Crystallization of (111) oriented MgO film was observed to occur above 500 °C regardless of the substrate orientations. X‐ray diffraction results and surface morphology investigated by atomic force microscope show structural evolution of the film as annealing temperature is varied. Grain growth of larger size was observed for the films on Si(111). Formation of a Si‐O‐Mg layer caused by the reaction of the substrate surface with the metal alkoxide wet film during pyrolysis and crystallization is suggested to account for the (111) oriented MgO film on Si(100) and (111) substrates. © 1995 American Institute of Physics.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Low‐temperature electron cyclotron resonance chemical vapor deposition of very low resistivity TiN for InP metallization using metalorganic precursors

Mohamed Boumerzoug, Peter Mascher, and John G. Simmons

Appl. Phys. Lett. 66, 2664 (1995); http://dx.doi.org/10.1063/1.113118 (3 pages) | Cited 7 times

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Titanium nitride (TiN) thin films were deposited onto Si and InP using the electron cyclotron resonance chemical vapor deposition technique. Tetrakis(dimethylamido)titanium (TDMATi) was used as a precursor. Depositions onto unheated substrates were carried out downstream of a nitrogen plasma. Stoichiometric (Ti:N≊1) and very low resistivity (43 μΩ cm) films were obtained at a deposition rate of 13 Å/min. The carbon and oxygen contaminants in the films were below the detectability limits of Rutherford backscattering and Auger electron spectroscopy. The Auger depth profile shows that the TiN/InP structure is stable for rapid thermal annealing up to 800 °C. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.-r Electrical properties of specific thin films
68.55.-a Thin film structure and morphology

Thermal polarization reversal of lithium niobate

M. Houé and P. D. Townsend

Appl. Phys. Lett. 66, 2667 (1995); http://dx.doi.org/10.1063/1.113119 (3 pages) | Cited 7 times

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An approach for polarization reversal of lithium niobate has been demonstrated. The method involves laser generated thermal pulses in the presence of a uniform electric field, on the −z faces of lithium niobate. Laser input energies in the range 40–90 mJ per pulse and a wavelength of 532 nm, for applied fields as low as 187 V/cm on samples at 400 °C, caused domain inversion. Observation of the inversion was carried out on a scanning electron microscope at a low primary electron energy of 2 keV and a probe current of under 25 pA so that no conductive layer was needed. This new poling method has the advantage of being simple to use, region specific and hence suitable for patterning, and does not require a vacuum chamber. © 1995 American Institute of Physics.
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77.80.Fm Switching phenomena
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Electron‐nuclear double resonance of the zinc vacancy in ZnGeP2

L. E. Halliburton, G. J. Edwards, M. P. Scripsick, M. H. Rakowsky, P. G. Schunemann, and T. M. Pollak

Appl. Phys. Lett. 66, 2670 (1995); http://dx.doi.org/10.1063/1.113120 (3 pages) | Cited 30 times

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Electron‐nuclear double resonance (ENDOR) has been used to identify the singly ionized zinc vacancy (VZn− center) in ZnGeP2. This S=1/2; defect is the dominant paramagnetic acceptor in the material, and it is associated with the absorption from 0.7 to 2.5 μm that limits the use of ZnGeP2 in optical parametric oscillators. The unpaired spin of the VZn− center is shared nearly equally by two phosphorus nuclei adjacent to the vacancy with little overlap of the wave function onto the other two phosphorus neighbors. Angular dependence of the ENDOR spectrum shows that the two primary 31P nuclei have nearly axial hyperfine matrices with unique axes pointing approximately toward the center of the vacancy. The internuclear axis for these two phosphorus makes an angle of 37.8° with the basal plane. © 1995 American Institute of Physics.
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61.72.J- Point defects and defect clusters
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
71.55.Ht Other nonmetals
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics

Internal emission metal‐semiconductor‐metal photodetectors on Si and GaAs for 1.3 μm detection

Mark Y. Liu and Stephen Y. Chou

Appl. Phys. Lett. 66, 2673 (1995); http://dx.doi.org/10.1063/1.113121 (3 pages) | Cited 5 times

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Si and GaAs metal‐semiconductor‐metal photodetectors with finger spacing as small as 0.25 μm are studied for 1.3 μm wavelength operation. It was found that the detectors have an external quantum efficiency as high as 0.5% for 1.3 μm light and a low dark current at room temperature. Increasing the Schottky barrier height reduces the responsivity of the detectors, but reduces the dark current more significantly and increases the responsivity‐to‐dark‐current ratio. The condition for maximum signal‐to‐noise ratio was derived. Finally, the dependence of the detector’s responsivity on the finger spacing was studied. Both the field‐enhanced injection and charge‐carrier screening were found to significantly affect the detector’s responsivity. © 1995 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Sx Metal-semiconductor-metal structures

Determination of the bonding of carbon acceptors in InxGa1−xAs for x<0.1

R. E. Pritchard, R. C. Newman, J. Wagner, M. Maier, A. Mazuelas, K. H. Ploog, P. A. Lane, T. Martin, and C. R. Whitehouse

Appl. Phys. Lett. 66, 2676 (1995); http://dx.doi.org/10.1063/1.113122 (3 pages) | Cited 8 times

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The local environment of CAs acceptors in InxGa1−xAs has been determined from the localized vibrational modes (LVMs) of both isolated CAs impurities and H–CAs pairs using infrared (IR) absorption and Raman scattering techniques. In as‐grown layers, a single LVM due to CAs was observed which broadened and shifted to lower energies with increasing x. The introduction of hydrogen led to the formation of H–CAs pairs and a single antisymmetric A1− mode (stretch) and a single symmetric A+1 mode (XH) were observed for all samples. All the LVMs were identified with carbon in CAsGa4 cluster configurations implying that less than 5% of the detectable carbon atoms are present in clusters incorporating one or more CAs–In bonds. © 1995 American Institute of Physics.
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61.72.J- Point defects and defect clusters
61.72.uj III-V and II-VI semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.30.Fs III-V and II-VI semiconductors
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