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22 May 1995

Volume 66, Issue 21, pp. 2769-2914

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Polarization stabilization of vertical‐cavity top‐surface‐emitting lasers by inscription of fine metal‐interlaced gratings

Jung‐Hoon Ser, Young‐Gu Ju, Jae‐Heon Shin, and Y. H. Lee

Appl. Phys. Lett. 66, 2769 (1995); http://dx.doi.org/10.1063/1.113469 (3 pages) | Cited 33 times

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The polarization of vertical‐cavity top‐surface‐emitting lasers (VCSELs) is stabilized by inscribing a fine metal‐interlaced grating into the topmost λ/4 layer of the distributed Bragg reflector (DBR). In this scheme, thin Al/AuZn films are deposited on the sidewalls of the grating defined by the ion milling technique. These metal films enhance polarization anisotropy of the top DBR. Grating periods of 0.9, 1.2, and 1.5 μm are tested and VCSELs with the 1.2‐ or 1.5‐μm grating show good polarization selectivity over the entire range of operating current. The direction of the dominant polarization is orthogonal to the grating line, and the polarization extinction ratio exceeds 40:1 on the average. This polarization discrimination scheme works well for all sizes of VCSELs tested. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Sub‐band‐gap laser micromachining of lithium niobate

F. K. Christensen and M. Müllenborn

Appl. Phys. Lett. 66, 2772 (1995); http://dx.doi.org/10.1063/1.113470 (2 pages) | Cited 12 times

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Laser processing of insulators and semiconductors is usually realized using photon energies exceeding the band‐gap energy. This makes laser processing of insulators difficult since high photon energies typically require either a pulsed laser or a frequency‐doubled continuous‐wave laser. A new method is reported which enables us to do laser processing of lithium niobate using sub‐band‐gap photons. Using high scan speeds, moderate power densities, and sub‐band‐gap photon energies results in volume removal rates in excess of 106μm3/s. This enables fast micromachining of small piezoelectric structures, or simple etching of grooves for precision positioning of optical fibers. © 1995 American Institute of Physics.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena

Post‐growth tuning of inverted cavity InGaAs/AlGaAs spatial light modulators using phase compensating dielectric mirrors

Z. Karim, C. Kyriakakis, A. R. Tanguay, R. F. Cartland, K. Hu, L. Chen, and A. Madhukar

Appl. Phys. Lett. 66, 2774 (1995); http://dx.doi.org/10.1063/1.113471 (3 pages) | Cited 3 times

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A novel method is demonstrated for the correction of cavity thickness deviations imposed by technological limitations in the growth process of a resonant cavity spatial light modulator. This method is based on cavity phase compensation through the use of an externally‐deposited dielectric Bragg mirror and provides an effective means of optimizing the device characteristics. In particular, such mirrors can significantly relax otherwise stringent epitaxial growth requirements in the fabrication of hybrid silicon/compound‐semiconductor spatial light modulators incorporating Fabry–Perot cavities. We further demonstrate deposition of a conductive, index‐tunable indium tin oxide (ITO) antireflection coating that is designed to maximize the contrast ratio and throughput of the inverted‐cavity modulator configuration. © 1995 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators

Efficient up‐conversion fluorescence in charge transfer compound crystal

H. Z. Wang, X. G. Zheng, W. D. Mao, Z. X. Yu, Z. L. Gao, G. Q. Yang, P. F. Wang, and S. K. Wu

Appl. Phys. Lett. 66, 2777 (1995); http://dx.doi.org/10.1063/1.113472 (3 pages) | Cited 11 times

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A series of new intramolecular charge transfer compounds with absorption bands in shorter wavelengths have been synthesized. Bright visible light emits from the crystals of these new compounds under infrared pulsed laser pumping. The spectral and pump density dependent properties demonstrate that some of the emissions are up‐conversion fluorescence due to two photon absorption. The fluorescent yields of one‐ and two‐photon absorption are in the same order at high pump density. This work demonstrates that these new intramolecular charge transfer crystals are good candidates for nonlinear optical materials. © 1995 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
34.70.+e Charge transfer

Optical reading and writing on GaAs using an atomic force microscope

G. L. Christenson, S. A. Miller, Z. H. Zhu, N. C. MacDonald, and Y. H. Lo

Appl. Phys. Lett. 66, 2780 (1995); http://dx.doi.org/10.1063/1.113473 (3 pages) | Cited 2 times

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Optically aided reading and writing of gold and tungsten mounds on proton‐implanted, multiple quantum well InGaAs/GaAs wafers has been demonstrated using an atomic force microscope (AFM). The system is relatively simple, requiring only a diode laser as the light source, providing a novel, compact, optoelectronic memory system. © 1995 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Spontaneous and stimulated emission by Eu‐chelate in a planar microcavity

Kazuhito Ebina, Yoshiko Okada, Akira Yamasaki, and Kikuo Ujihara

Appl. Phys. Lett. 66, 2783 (1995); http://dx.doi.org/10.1063/1.113474 (3 pages) | Cited 5 times

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Characteristics of spontaneous and stimulated emission by Eu(BFA)4− chelate in a planar microcavity of 2.5λ length are studied experimentally. The spontaneous emission enhancement factor is close to unity. The observed spectral width and the angular divergence of spontaneous emission are consistent with theory. A distinct threshold for the transition from spontaneous to stimulated emission was observed with an associated decrease in the decay time of the emission. The spectral width decreased with increasing pumping power. © 1995 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Ah General laser theory
42.50.-p Quantum optics

Beryllium diffusion in GaAs/AlGaAs single quantum well separate confinement heterostructure laser active regions

G. E. Kohnke, M. W. Koch, C. E. C. Wood, and G. W. Wicks

Appl. Phys. Lett. 66, 2786 (1995); http://dx.doi.org/10.1063/1.113475 (3 pages) | Cited 2 times

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Beryllium (Be) diffusion into the active layers of single quantum well separate confinement heterostructure lasers grown by molecular beam epitaxy is investigated using photoluminescence absorption spectroscopy, secondary ion mass spectroscopy, capacitance–voltage profiling, and laser threshold current measurements. A significant amount of Be diffusion occurs under normal growth conditions. Large concentrations of Be in the quantum well are correlated to the lack of an exciton feature in the absorption spectrum. The amount of Be in the active region is reduced through a combination of lower Be concentration and lower growth temperature in the upper cladding region of the laser. © 1995 American Institute of Physics.
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66.30.J- Diffusion of impurities
42.55.Px Semiconductor lasers; laser diodes
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Integrated optical isolator based on nonreciprocal higher‐order mode conversion

Toshihiro Shintaku

Appl. Phys. Lett. 66, 2789 (1995); http://dx.doi.org/10.1063/1.113476 (3 pages) | Cited 18 times

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An integrated optical isolator based on nonreciprocal conversion from a fundamental TM mode to a higher‐order TE mode is proposed and experimentally demonstrated. The isolator is realized using a single‐mode rib channel waveguide in Ce‐substituted yttrium iron garnet which has a very large Faraday rotation. 24 dB isolation is obtained at a wavelength of 1550 nm. © 1995 American Institute of Physics.
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42.82.-m Integrated optics

Optical and mechanical multistability in a dye‐doped polymer fiber Fabry‐Perot waveguide

D. J. Welker and M. G. Kuzyk

Appl. Phys. Lett. 66, 2792 (1995); http://dx.doi.org/10.1063/1.113477 (3 pages) | Cited 12 times

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We report on the demonstration of both mechanical and optical multistability in a 110 μm diameter and 2.5 cm long Fabry‐Perot cavity defined in a dye‐doped polymer optical fiber waveguide. Such a device is a basic building block of optical and mechanical logic. © 1995 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.-e Optical elements, devices, and systems
42.82.-m Integrated optics

Solute segregation to grain boundaries in MgO‐doped alumina

K. K. Soni, A. M. Thompson, M. P. Harmer, D. B. Williams, J. M. Chabala, and R. Levi‐Setti

Appl. Phys. Lett. 66, 2795 (1995); http://dx.doi.org/10.1063/1.113478 (3 pages) | Cited 20 times

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The spatial distribution of Mg solute in polycrystalline, single‐phase Al2O3 has been obtained, using a secondary ion imaging technique. Segregation of Mg to the Al2O3 grain boundaries is clearly observed—strong evidence that the principal role of MgO is to reduce the grain boundary mobility via a solute‐drag mechanism. In addition, Mg (dopant) and Ca (impurity) are shown to cosegregate, shedding further light on magnesium’s ability to stabilize microstructural evolution in Al2O3. © 1995 American Institute of Physics.
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61.72.up Other materials
61.72.Mm Grain and twin boundaries
64.75.-g Phase equilibria

Polarity of a (111)‐oriented CdTe layer grown on a (100) Si substrate

Iwao Sugiyama and Yoshito Nishijima

Appl. Phys. Lett. 66, 2798 (1995); http://dx.doi.org/10.1063/1.113479 (3 pages) | Cited 11 times

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Direct epitaxial growth on silicon has advantages when fabricating monolithic integrated infrared focal‐plane arrays. We demonstrated that both (111)A and (111)B oriented CdTe layers can be grown on (100) Si substrates by molecular‐beam epitaxy. The surface morphology of the (111)A layer was rough, while that of the (111)B layer was smooth. The key determining polarity is the substrate temperature during preadsorption of Te2 flux. We found a polarity transition at 450 to 500 °C, and (111)B layers grow above that temperature. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Epitaxial growth of BaTiO3 thin films at 600 °C by metalorganic chemical vapor deposition

D. L. Kaiser, M. D. Vaudin, L. D. Rotter, Z. L. Wang, J. P. Cline, C. S. Hwang, R. B. Marinenko, and J. G. Gillen

Appl. Phys. Lett. 66, 2801 (1995); http://dx.doi.org/10.1063/1.113480 (3 pages) | Cited 28 times

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BaTiO3 thin films were grown epitaxially on (100) MgO substrates by metalorganic chemical vapor deposition (MOCVD) at a temperature of 600 °C. This substrate temperature is the lowest reported temperature for the growth of epitaxial BaTiO3 films by an MOCVD process. The films had a cube–cube orientation relationship with the substrate and were oriented with an a‐axis perpendicular to the substrate plane. Nanoscale energy dispersive x‐ray spectrometry measurements showed no evidence of interdiffusion between the film and substrate. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Novel metalorganic route for fabrication of BaTiO3 thin ferroelectric films

S. Nourbakhsh, I. Vasilyeva, and J. N. Carter

Appl. Phys. Lett. 66, 2804 (1995); http://dx.doi.org/10.1063/1.113481 (3 pages) | Cited 4 times

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A novel diol based metalorganic route has been developed and employed to deposit BaTiO3 films on Si and Pt coated Si substrates. Differential thermal analysis, thermogravimetric analysis, x‐ray photoelectron spectroscopy, and x‐ray diffraction collectively indicated that BaTiO3 was formed through the reaction of Ba and Ti oxides at approximately 500 °C. The films were single phase, had no crystallographic texture, and contained no detectable impurities. © 1995 American Institute of Physics.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Observation of a vacuum tunnel gap in a transmission electron microscope using a micromechanical tunneling microscope

M. I. Lutwyche and Y. Wada

Appl. Phys. Lett. 66, 2807 (1995); http://dx.doi.org/10.1063/1.113482 (3 pages) | Cited 18 times

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This letter reports the observation of the vacuum tunnel gap between two conductors using a high resolution transmission electron microscope. A 2.5 mm square micromachined tunneling microscope chip has been fabricated with a minimum feature size of 0.4 μm. The chip fits into a modified side‐entry type transmission electron microscope holder. The tunnel gap is controlled by a purpose‐built feedback controller. The micromachines work reliably during observation of the tip apex in a transmission electron microscope, allowing the voltage and current to be changed while the tunnel gap is observed. © 1995 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.79.Cz Scanning tunneling microscopes

Bias‐enhanced nucleation of highly oriented diamond on titanium carbide (111) substrates

S. D. Wolter, M. T. McClure, J. T. Glass, and B. R. Stoner

Appl. Phys. Lett. 66, 2810 (1995); http://dx.doi.org/10.1063/1.113483 (3 pages) | Cited 17 times

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The bias‐enhanced nucleation (BEN) technique has been applied to TiC(111) substrates and resulted in deposition of oriented diamond particles. The orientation was observed via scanning electron microscopy. A dense region of oriented particles was not observed on the samples, presumably due to the excessive twinning of the diamond. However, micrographs taken throughout the substrate showed diamond particles having similar orientation with respect to each other. Some of the diamond particles showed evidence of azimuthal twist and tilting, resulting most likely from the ∼21% lattice mismatch. Raman spectra of the diamond crystals show a strong feature at 1332 cm−1, which is indicative of diamond, and smaller features at 1480 and 1602 cm−1 due to sp2‐bonded carbon. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Growth of cubic BN films on β‐SiC by ion‐assisted pulsed laser deposition

P. B. Mirkarimi, D. L. Medlin, K. F. McCarty, and J. C. Barbour

Appl. Phys. Lett. 66, 2813 (1995); http://dx.doi.org/10.1063/1.113484 (3 pages) | Cited 40 times

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Cubic BN(c‐BN) films were deposited on cubic SiC (β‐SiC) films on Si(100) by ion‐assisted pulsed laser deposition. The films were nearly phase pure, with c‐BN fractions of up to ∼90% as determined by infrared spectroscopy. Cross‐sectional transmission electron microscopy showed that much of the film/substrate interface had a thin amorphous layer next to the β‐SiC, followed by hexagonal/turbostratic BN (h‐BN/t‐BN), and then polycrystalline c‐BN, as commonly observed on Si substrates. However, there are also c‐BN crystals that extend to within 10 Å of the SiC interface, with no intervening h‐BN/t‐BN layer. A sharp falloff in c‐BN content was observed for substrate temperatures <150 °C, and below 100 °C c‐BN did not form for any ratio of the ion current flux to the deposition flux. At a different ion‐to‐substrate angle (20° closer to glancing incidence) the falloff in c‐BN content for T<150 °C was less sharp. The existence of a critical temperature for c‐BN formation does not result from a nitrogen deficiency at low temperature since film stoichiometry did not change with temperature. © 1995 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology

Electron paramagnetic resonance hyperfine spectrum of the Si E′ defect associated with weakly bonded hydrogen molecules in synthetic silica optical fibers

J. Li, S. Kannan, R. L. Lehman, and G. H. Sigel

Appl. Phys. Lett. 66, 2816 (1995); http://dx.doi.org/10.1063/1.113485 (3 pages) | Cited 4 times

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Electron paramagnetic resonance (EPR) studies of low hydroxyl synthetic silica optical fibers have revealed the presence of a 13 G hyperfine splitting of the Si E′ center which is associated with weakly bonded hydrogen molecules in the silica structure. The fibers were previously exposed to hydrogen at room temperature. During an annealing of the silica fibers at 100 °C in air, the 13 G doublet was observed to decline and disappear while the 74 G doublet and the Si E′ signal were growing. The result correlates with the redistribution of hydrogen molecules and is relevant to the environmental aging that is encountered in fiber optical waveguides under certain conditions. © 1995 American Institute of Physics.
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42.70.Ce Glasses, quartz
42.81.Cn Fiber testing and measurement of fiber parameters
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Enhancement of diamond nucleation by ultrasonic substrate abrasion with a mixture of metal and diamond particles

Y. Chakk, R. Brener, and A. Hoffman

Appl. Phys. Lett. 66, 2819 (1995); http://dx.doi.org/10.1063/1.113486 (3 pages) | Cited 28 times

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A method of surface treatment was found to enhance diamond chemical vapor deposition nucleation on nondiamond substrates such as Si, SiO2, and Al2O3. The nucleation density obtained by ultrasonic abrasion with diamond powder alone was found to be enhanced by a few orders of magnitude using a mixed slurry consisting of diamond and metal powders. No strong nucleation enhancement was observed using a metal slurry only for surface treatment. The metal powders used were W, Ta, Mo, Nb, Ti, Al, Fe, Ni, Cu, and Si. It is concluded that the enhanced nucleation is associated with a physico‐chemical modification of the substrate surface, attained through a cooperative effect of both the metal and diamond particles during the ultrasonic abrasion process. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Critical thickness condition for growth of strained quantum wires in substrate V‐grooves

L. B. Freund and T. J. Gosling

Appl. Phys. Lett. 66, 2822 (1995); http://dx.doi.org/10.1063/1.113487 (3 pages) | Cited 10 times

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The physical system under study is a quantum wire of roughly triangular cross section grown epitaxially in a V‐shaped groove on a patterned (100) surface of a cubic substrate. The walls of the groove are {111} planes of the substrate material, so that the wire extends along a 〈110〉 direction. For a given thickness, or depth, of the wire, an analysis is presented which leads to an estimate of the smallest elastic mismatch strain for which the wire remains stable against formation of misfit dislocations, in the spirit of the Matthews‐Bladeslee condition, taking into account both the free surface effect and the mismatch strain effect. Comparison is made with the experimental observations of T. Arakawa, S. Tsukamoto, Y. Nagamune, M. Nishioka, J.‐H. Lee, and Y. Arakawa [Jpn. J. Appl. Phys. 32, L1377 (1993)]. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology

Novel pseudoalloy approach to epitaxial growth of complex InGaAlAs multilayer structures

I. J. Fritz, J. F. Klem, M. J. Hafich, and A. J. Howard

Appl. Phys. Lett. 66, 2825 (1995); http://dx.doi.org/10.1063/1.113442 (3 pages) | Cited 1 time

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We describe growth by molecular‐beam epitaxy of InGaAlAs multilayers using a versatile and agile technique that allows a wide range of band gaps and strains for the individual layers. In our approach, the layers are most generally pseudoalloys produced by growing short‐period superlattices containing ternary or quaternary layers, in various combinations, without changing the temperatures of the single In, Ga, Al, and As effusion cells. To illustrate the method, we have designed, grown, and characterized a separate‐confinement, strained layer light‐emitting diode operating at 1.5 μm. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.60.Jb Light-emitting devices

Injection‐level dependent surface recombination velocities at the silicon‐plasma silicon nitride interface

Armin G. Aberle, Thomas Lauinger, Jan Schmidt, and Rudolf Hezel

Appl. Phys. Lett. 66, 2828 (1995); http://dx.doi.org/10.1063/1.113443 (3 pages) | Cited 25 times

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Experimental evidence is presented that the effective surface recombination velocity (Seff) at p‐silicon surfaces passivated by silicon nitride films (fabricated in a plasma‐enhanced chemical vapor deposition system) shows an injection‐level dependence similar to the behavior of thermally oxidized silicon surfaces. Using the microwave‐detected photoconductance decay method, injection‐level dependent Seff measurements were taken on nitride‐passivated p‐silicon wafers of different resistivities (1.5–3000 Ω cm). The obtained Seff values also show that for low‐resistivity substrates (≤2 Ω cm), nitride passivation is as effective as conventional oxide passivation (and even superior at low injection levels) and furthermore offers the advantage of a less pronounced injection‐level dependence. © 1995 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.20.Hb Impurity and defect levels; energy states of adsorbed species

High‐reflectivity visible‐wavelength semiconductor native oxide Bragg reflectors grown by metalorganic chemical vapor deposition

A. L. Holmes, M. R. Islam, R. V. Chelakara, F. J. Ciuba, R. D. Dupuis, M. J. Ries, E. I. Chen, S. A. Maranowski, and N. Holonyak

Appl. Phys. Lett. 66, 2831 (1995); http://dx.doi.org/10.1063/1.113444 (3 pages) | Cited 8 times

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The growth and fabrication of high‐quality vertical distributed Bragg reflectors (DBRs) utilizing layers of InAlP and the AlAs native oxide are reported. The III–V epitaxial structures employed in this work consist of alternating layers of InAlP and AlAs grown on GaAs substrates by low‐pressure metalorganic chemical vapor deposition (MOCVD). The DBR mirrors are formed by selective lateral oxidation of the AlAs layers (H2O vapor + N2, 450 °C) resulting in a layered structure of single‐crystal InAlP and amorphous AlxOy. The oxidized vertical DBR mirrors having only 4.5 pairs exhibit high reflectivity in the 96%–99% range over a wide spectral region (Δλ∼200 nm). The structural and optical properties of these DBR mirrors have been measured and show that the reflectors are of high quality. © 1995 American Institute of Physics.
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42.79.Bh Lenses, prisms and mirrors
78.66.Fd III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Transient current study of low‐temperature grown GaAs using an n‐i‐n structure

H. Fujioka, E. R. Weber, and A. K. Verma

Appl. Phys. Lett. 66, 2834 (1995); http://dx.doi.org/10.1063/1.113445 (3 pages) | Cited 9 times

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The electrical properties of molecular beam epitaxy (MBE) grown low‐temperature GaAs (LT‐GaAs) by current transient spectroscopy (CTS) has been investigated. At least three deep traps have been observed in LT‐GaAs grown at 250 °C and annealed at 600 °C. The deepest level is dominant and has an activation energy of 0.82 eV, which is the same as that of the midgap donor, EL2. This is consistent with the activation energy of resistivity of this sample (0.77 eV), which is close to that for bulk nondoped semi‐insulating wafers. These results indicate that the Fermi level of annealed LT‐GaAs grown at 250 °C is pinned by the deep level at the midgap that is generally ascribed to AsGa antisite defects. © 1995 American Institute of Physics.
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71.55.Eq III-V semiconductors

Scanning tunneling microscopy study of GaAs(001) surface prepared by deoxygenated and de‐ionized water treatment

Y. Hirota and T. Fukuda

Appl. Phys. Lett. 66, 2837 (1995); http://dx.doi.org/10.1063/1.113446 (3 pages) | Cited 6 times

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This letter presents the scanning tunneling microscopy (STM) images of GaAs(001) surfaces prepared by deoxygenated and de‐ionized water (DODIW) treatment. The STM images reveal that the missing‐dimer rows and unit cells of the 2×4 structure and atomic‐layer steps of Ga–As clearly appear after heating the samples above 500 °C in an ultrahigh vacuum. These experimental results suggest the DODIW treatment can attain atomically flat GaAs(001) surface. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)

A study of gettering efficiency and stability in Czochralski silicon

Scott A. McHugo, E. R. Weber, M. Mizuno, and F. G. Kirscht

Appl. Phys. Lett. 66, 2840 (1995); http://dx.doi.org/10.1063/1.113447 (3 pages) | Cited 16 times

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Internal gettering efficiencies and stabilities of high and low carbon doped silicon have been compared with standard and ramped annealing conditions. The gettering efficiency of low carbon silicon has been found to be greatly enhanced with ramped annealing by creating a high concentration of oxygen precipitates and related defects. This ramped low carbon material and both the standard and ramped high carbon materials have a greatly enhanced oxygen precipitation rate, relative to the standard low carbon standard anneal. However, the high carbon material’s gettering efficiency and stability are low, compared to the ramped low carbon material, due to a reduction of the oxygen precipitate’s strain field and concentration of related defects. © 1995 American Institute of Physics.
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61.72.Yx Interaction between different crystal defects; gettering effect
61.72.Cc Kinetics of defect formation and annealing
61.72.S- Impurities in crystals
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