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22 May 1995

Volume 66, Issue 21, pp. 2769-2914

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Observation of enhanced photoluminescence in erbium‐doped semiconductor microdisk resonator

D. Y. Chu, S. T. Ho, X. Z. Wang, B. W. Wessels, W. G. Bi, C. W. Tu, R. P. Espindola, and S. L. Wu

Appl. Phys. Lett. 66, 2843 (1995); http://dx.doi.org/10.1063/1.113448 (3 pages) | Cited 5 times

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We report experimental results from an erbium‐doped gallium phosphide microdisk resonator pumped by a Ti‐sapphire laser at 980 nm. Fabrication and characterization of the microdisk resonator are discussed. Enhanced Er+3 intra‐4f‐shell photoluminescence was observed in the microdisk resonator due to microcavity effect and compared to a thin film sample. At low pumping power intensity, the photoluminescence from erbium‐doped gallium phosphide microdisks is an order stronger than that from a thin film sample. © 1995 American Institute of Physics.
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42.50.-p Quantum optics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.55.Hx Other solid inorganic materials

Influence of the As overpressure during the molecular beam epitaxy growth of Si‐doped (211)A and (311)A GaAs

L. Pavesi, M. Henini, and D. Johnston

Appl. Phys. Lett. 66, 2846 (1995); http://dx.doi.org/10.1063/1.113449 (3 pages) | Cited 20 times

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Si‐doped (211)A and (311)A GaAs samples grown by molecular beam epitaxy (MBE) with various growth As pressures have been studied. Hall effect measurements have revealed that the doping changes from p to n type by increasing the As pressure. The transition As pressure is lower for the (211)A than for the (311)A surfaces. Photoluminescence measurements have shown that by increasing the As pressure, arsenic vacancy defects are changed into pairs of Ga vacancy and Ga antisite defects. These results are explained by considering the orientation dependence of the surface bonding and the kinetics of the MBE growth process. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Cr III-V semiconductors

Probing the interfacial and sub‐surface structure of Si/Si1−xGex multilayers

S. Sugden, C. J. Sofield, T. C. Q. Noakes, R. A. A. Kubiak, and C. F. McConville

Appl. Phys. Lett. 66, 2849 (1995); http://dx.doi.org/10.1063/1.113450 (3 pages) | Cited 4 times

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The ability to determine structural and compositional information from the sub‐surface region of a semiconductor material has been demonstrated using a new time‐of‐flight medium energy ion scattering spectroscopy (ToF‐MEISS) system. A series of silicon–silicon/germanium (Si/Si1−xGex) heterostructure and multilayer samples, grown using both solid source molecular beam epitaxy (MBE) and gas source chemical vapor deposition (CVD) on Si(100) substrates, have been investigated. These data indicate that each individual layer of Si1−xGex (x∼0.22) in both two‐ and three‐period samples, can be uniquely identified with a resolution of approximately 3 nm. A comparison of MBE and CVD grown samples has also been made using layers with similar structures and composition. The total Ge content of each sample was confirmed using conventional Rutherford backscattering spectrometry. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Conduction band discontinuities in Ga0.5In0.5P‐AlxGa0.5−xIn0.5P heterojunctions measured by internal photoemission

H. K. Yow, P. A. Houston, and M. Hopkinson

Appl. Phys. Lett. 66, 2852 (1995); http://dx.doi.org/10.1063/1.113451 (3 pages) | Cited 7 times

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The conduction band discontinuities in Ga0.5In0.5P‐AlxGa0.5−xIn0.5P heterojunctions, lattice matched to GaAs and grown by molecular beam epitaxy, were measured by internal photoemission techniques at room temperature over the whole compositional range. The discontinuity is found to vary linearly in x as (0.59x)eV for x≤0.30 and as (−0.18x+0.23)eV for x≳0.30, whereas the inferred valence band discontinuity (band‐gap difference minus the conduction band discontinuity) varies as (0.61x)eV. The direct–indirect gap crossover composition in AlxGa0.5−xIn0.5P is found to be close to x≊0.3. © 1995 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states

Defect distribution in low‐temperature molecular beam epitaxy grown Si/Si(100), improved depth profiling with monoenergetic positrons

Cs. Szeles, P. Asoka‐Kumar, K. G. Lynn, H.‐J. Gossmann, F. C. Unterwald, and T. Boone

Appl. Phys. Lett. 66, 2855 (1995); http://dx.doi.org/10.1063/1.113452 (3 pages) | Cited 13 times

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The depth distribution of open‐volume defects has been studied in Si(100) crystals grown by molecular beam epitaxy at 300 °C by the variable‐energy monoenergetic positron beam technique combined with well‐controlled chemical etching. This procedure gave a 10 nm depth resolution which is a significant improvement over the inherent depth resolving power of the positron beam technique. The epitaxial layer was found to grow defect‐free up to 80 nm, from the interface, where small vacancy clusters, larger than divacancies, appear. The defect density then sharply increases toward the film surface. The result clearly shows that the nucleation of small open‐volume defects is a precursor state to the breakdown of epitaxy and to the evolution of an amorphous film. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Control of SiH4/O2 chemical vapor deposition using the gas‐phase additive C2H4

T. Takahashi, Y. Egashira, and H. Komiyama

Appl. Phys. Lett. 66, 2858 (1995); http://dx.doi.org/10.1063/1.113453 (3 pages) | Cited 1 time

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The effects of adding C2H4 on the chemical vapor deposition (CVD) of SiO2 films from SiH4/O2 were studied at temperatures ranging from 673 to 1073 K using a hot‐wall‐type tubular reactor. Adding C2H4 improved the step coverage of the films while effectively suppressing the gas‐phase formation of particles. Because C2H4 is a well‐known radical scavenger, the control of gas‐phase chain reactions by consuming atom and/or radical species is responsible for the suppression of particle formation. Comparison of the sticking probability of growth species in SiH4/O2 systems with and without added C2H4 shows that high deposition temperatures are responsible for the improvement in step coverage. The analysis of the carbon content in the films by x‐ray photoelectron spectroscopy (XPS) shows no difference in carbon impurity levels between the SiH4/O2/C2H4 and SiH4/O2 chemical systems. © 1995 American Institute of Physics.  
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface

R. J. Hauenstein, D. A. Collins, X. P. Cai, M. L. O’Steen, and T. C. McGill

Appl. Phys. Lett. 66, 2861 (1995); http://dx.doi.org/10.1063/1.113454 (3 pages) | Cited 42 times

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Effect of a nitrogen electron‐cyclotron‐resonance (ECR) microwave plasma on near‐surface composition, crystal structure, and morphology of the As‐stabilized GaAs (100) surface is investigated with the use of digitally image‐processed in situ reflection high energy electron diffraction. Nitridation is performed on molecular beam epitaxially (MBE) grown GaAs surfaces near 600 °C under typical conditions for ECR microwave plasma‐assisted MBE growth of GaN films on GaAs. Brief plasma exposures (≊3–5 s) are shown to result in a specular, coherently strained, relatively stable, GaN film approximately one monolayer in thickness, which can be commensurately overgrown with GaAs while longer exposures (up to 1 min) result in incommensurate zincblende epitaxial GaN island structures. Specular and nonspecular film formations are explained in terms of N‐for‐As surface and subsurface anion exchange reactions, respectively. Commensurate growth of ultrathin buried GaN layers in GaAs is achieved. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Characteristics of a δ ‐doped GaAs/InGaAs p‐channel heterostructure field‐effect transistor

R. T. Hsu, W. C. Hsu, M. J. Kao, and J. S. Wang

Appl. Phys. Lett. 66, 2864 (1995); http://dx.doi.org/10.1063/1.113455 (3 pages) | Cited 5 times

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A δ‐doped GaAs/In0.2Ga0.8As p‐channel heterostructure field‐effect transistor grown by low‐pressure metalorganic chemical vapor deposition is demonstrated. The mobilities and two‐dimensional hole gas concentrations at 300 (77) K are 260 (2600) cm2/v s and 1012 (5.5×1011) cm−2, respectively. For a gate length of 1.5 μm, the maximum extrinsic transconductances are 15 mS/mm at 300 K and 24 mS/mm at 77 K. The high transconductances extend a wide range versus gate voltage. © 1995 American Institute of Physics.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Incorporation of oxygen and chlorine atoms into low‐temperature (850 °C) silicon epitaxial films by chemical vapor deposition

Akihiro Miyauchi, Kazuhiro Ueda, Yousuke Inoue, Takaya Suzuki, and Yoshinori Imai

Appl. Phys. Lett. 66, 2867 (1995); http://dx.doi.org/10.1063/1.113456 (3 pages) | Cited 3 times

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A correlation between the partial pressure of dichlorosilane gas (SiH2Cl2) and the incorporation of oxygen (O) and chlorine (Cl) atoms into the low‐temperature (850 °C) epitaxial films was found. The profiles of O and Cl concentrations in the epitaxial films were measured by secondary ion mass spectroscopy. Incorporation of O and Cl atoms into the growth films during the epitaxial growth was suppressed by increasing the partial pressure of SiH2Cl2. The growth rate linearly increased with the partial pressure of SiH2Cl2 and eventually saturated. Incorporation of O atoms was inhibited and fine removal of Cl atoms was achieved when the growth rates saturated. The epitaxial films with high O and Cl concentrations had a microroughened surface (root mean square of microroughness ≳0.4 nm). The microroughness was also improved by increasing the partial pressure of SiH2Cl2. The coverage of kinks and/or hollow bridge sites by hydrogen (H) and Cl atoms seems to restrict the reaction of O and water (H2O) with the growth front surface. © 1995 American Institute of Physics.  
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Temperature‐dependent dry cleaning characteristics of GaAs (111)B surfaces with a hydrogen electron cyclotron resonance plasma

L. M. Weegels, T. Saitoh, and H. Kanbe

Appl. Phys. Lett. 66, 2870 (1995); http://dx.doi.org/10.1063/1.113457 (3 pages) | Cited 5 times

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The cleaning of the GaAs (111)B surface with a hydrogen electron cyclotron resonance discharge plasma is investigated at temperatures between 200 and 500 °C and compared with the GaAs (100) surface. It is found that during the exposure the GaAs (111)B is etched in a non‐Arrhenius way with a higher etch rate at low temperatures. For temperatures 300–500 °C, the surface is severely roughened after exposure, while the (100) surface remains smooth in all cases. The near‐surface crystalline quality of GaAs (111)B remains higher than that of (100).
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81.65.-b Surface treatments

Effect of growth conditions on crystalline quality of metalorganic chemical vapor deposition (111)B CdTe epilayers characterized by x‐ray diffraction

E. Khanin, N. Amir, Y. Nemirovsky, and E. Gartstein

Appl. Phys. Lett. 66, 2873 (1995); http://dx.doi.org/10.1063/1.113458 (3 pages) | Cited 1 time

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A study of the effect of growth parameters on the resulting crystalline quality of CdTe epilayers grown by metalorganic chemical vapor deposition (MOCVD) technique is reported. The crystalline quality of the MOCVD CdTe (111)B epilayers is investigated by the double crystal rocking curve (DCRC) and Laue x‐ray diffraction techniques. The rocking curve full width at half‐maximum (FWHM) is used as a quantitative measure of structural perfection of the epilayers. The results indicate that a major parameter that affects the crystalline quality is the growth temperature. Epilayers grown at 480 °C exhibit high crystalline quality that is hardly affected by the partial vapor pressure of the metalorganic sources or the growth rate, whereas these growth parameters strongly affect the crystalline quality of epilayers grown at 430 °C. This phenomenon is attributed to the different mechanisms governing the growth process at these growth temperatures, namely mass transfer and surface kinetics. The crystalline quality of the MOCVD CdTe layers grown on the (111)B face of CdZnTe (4% Zn) or CdTe substrates can consistently match that of MOCVD (001) layers previously considered to have the best crystalline quality, with FWHM less than 90 arcsec for 6–7 μm thick layers. Linewidths as narrow as 56 arcsec are observed for epilayers thicker than about 11 μm. Microtwins, identified by the sixfold symmetry of Laue and double crystal 360° ϕ‐scan diffraction patterns, are present even in epilayers with the narrowest FWHM. No straightforward correlation between visual morphology and crystalline quality was found. The growth of CdTe or CdZnTe epilayers is proposed by the MOCVD technique as buffer layers to obtain super substrates (‘‘superstrates’’) for the subsequent liquid phase epitaxy (LPE) growth of HgCdTe layers and additional heterostructures. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Avalanche breakdown in AlxGa1−xAs alloys and Al0.3Ga0.7As/GaAs multilayers

J. P. R. David, J. Allam, A. R. Adams, J. S. Roberts, R. Grey, G. J. Rees, and P. N. Robson

Appl. Phys. Lett. 66, 2876 (1995); http://dx.doi.org/10.1063/1.113459 (3 pages) | Cited 9 times

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The avalanche breakdown voltage (Vb) has been measured in a range of bulk AlxGa1−xAs alloys and Al0.3Ga0.7As/GaAs multilayer structures. The bulk alloys show a linear dependence of Vb on x up to at least x=0.6. Multilayers with thin (≤100 Å) dimensions follow this trend, with Vb being determined by the average Al fraction of the multilayer ‘‘pseudoalloy’’. For thicker (≥500 Å) layers Vb tends to a mean of the bulk values of the layers. The transition from pseudoalloy to bulklike behavior is interpreted in terms of the momentum and energy relaxation lengths, estimated for bulk GaAs using a Monte Carlo solution of the semiclassical transport equation. © 1995 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects
73.50.Fq High-field and nonlinear effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Random telegraphic signals in silicon bipolar junction transistors

Arnost Neugroschel, Chih‐Tang Sah, and Michael S. Carroll

Appl. Phys. Lett. 66, 2879 (1995); http://dx.doi.org/10.1063/1.113460 (3 pages) | Cited 14 times

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Random telegraphic signals (RTS) are observed in the forward‐biased dc base current of electrically stressed silicon bipolar transistors. The RTS noise in the base current is shown to originate from random trapping of electrons at the stress‐created oxide and interface traps located over the oxide‐covered emitter‐base junction space‐charge region. The observed pulse width (∼0.1–100 s), the uniform height of the pulses (∼1% of dc base current), and their dependencies on temperature and VBE (emitter/base bias voltage), exp(qVBE/nkT) with n=2, are interpreted by the two‐step model consisting of electron tunneling between the oxide and interface traps, and the recombination of Si band electrons and holes at the interface traps. © 1995 American Institute of Physics.
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85.30.Pq Bipolar transistors
72.70.+m Noise processes and phenomena
73.40.Gk Tunneling

Growth and surface chemistry of oxynitride gate dielectric using nitric oxide

Rama I. Hegde, Philip J. Tobin, Kimberly G. Reid, Bikas Maiti, and Sergio A. Ajuria

Appl. Phys. Lett. 66, 2882 (1995); http://dx.doi.org/10.1063/1.113461 (3 pages) | Cited 90 times

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Oxynitride films grown on preoxidized (100) silicon surfaces in a nitric oxide (NO) ambient at 950 °C have been investigated using x‐ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), and cross‐sectional transmission electron microscopy (XTEM). Compared to N2O oxynitride, NO oxynitride exhibits very different surface chemistry, interface properties, and growth mechanisms. The etch back of NO and N2O oxynitride films allows control of sample thickness for the XPS measurements. NO oxynitride has the interfacial nitrogen (Nint) sharply peaked on the Si substrate side of the interface, while it is broad and on the dielectric side of the interface for the N2O oxynitride. The N(1s) XPS results reveal a clear distinction between N2O oxynitride and NO oxynitride. Near the Si/dielectric interface the NO oxynitride shows primarily Si≡N bonds, while the N2O films showed a N(1s) binding energy peak that is in‐between that of Si≡N bonds and Si2=N—O bonds. Furthermore, the NO oxynitride surface roughness as determined by AFM is lower than that of the Si/SiO2 interface. © 1995 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.65.-b Surface treatments

Polarization rotation modulator in a strained [110]‐oriented multiple quantum well

D. S. McCallum, X. R. Huang, Arthur L. Smirl, D. Sun, and E. Towe

Appl. Phys. Lett. 66, 2885 (1995); http://dx.doi.org/10.1063/1.113462 (3 pages) | Cited 12 times

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The inherent optical anisotropy of a strained [110]‐oriented multiple quantum well structure is used to make an optically addressed light modulator based on polarization rotation. The anisotropy of the multiple quantum well absorption coefficient for orthogonal polarizations causes rotation of the plane of polarization of light passing through the structure. By partially bleaching the quantum well exciton, the amount of polarization rotation is changed, and therefore modulation of the amplitude of the transmitted beam is achieved. © 1995 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors
42.65.Pc Optical bistability, multistability, and switching, including local field effects

N‐channel polycrystalline silicon thin film transistors using as‐deposited polycrystalline silicon and ion doping

Hong Joo Lim, Bong Yeol Ryu, and Jin Jang

Appl. Phys. Lett. 66, 2888 (1995); http://dx.doi.org/10.1063/1.113463 (3 pages) | Cited 8 times

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Polycrystalline silicon (poly‐Si) thin film transistors (TFTs) were fabricated using as‐deposited poly‐Si and ion doping. The poly‐Si was prepared by a remote plasma chemical vapour deposition at the substrate temperature of 280 °C using a mixture gas of SiF4, SiH4, He, and H2. The n‐channel poly‐Si TFTs using as‐deposited poly‐Si and ion doping exhibited a field effect mobility of 12 cm2/V s, a threshold voltage of 4 V, and a gate voltage swing of 1.80 V/decade. © 1995 American Institute of Physics.
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85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Metalorganic molecular beam epitaxy of heavily carbon‐doped InP using tertiarybutylphosphine as a carbon auto‐doping source

Je‐Hwan Oh, Jun‐ichi Shirakashi, Fumihiko Fukuchi, and Makoto Konagai

Appl. Phys. Lett. 66, 2891 (1995); http://dx.doi.org/10.1063/1.113464 (3 pages) | Cited 7 times

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Metalorganic molecular beam epitaxy (MOMBE) of heavily carbon‐doped InP was performed by using elemental In and tertiarybutylphosphine (TBP). In this study, TBP was employed as both phosphorus and carbon source, and carbon‐doping characteristics in MOMBE growth of InP using TBP were discussed. The electron concentration of carbon‐doped InP could be controlled in three orders of magnitude (n=1016–1019 cm−3) by only varying the growth temperature. In the growth temperature region investigated, two distinct growth temperatures dependencies of the electron concentration of carbon‐doped InP epilayers were observed. It was also found that the carbon incorporation is affected by the TBP cracking temperature. As the TBP cracking temperature increases, the electron concentration increased at fixed growth temperature and also showed less dependence on growth temperature. Moreover, under higher TBP cracking temperature condition, the overall carbon incorporation may be dominated by the more atomiclike decomposed species. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.uj III-V and II-VI semiconductors

Extraction of the minority carrier recombination lifetime from forward diode characteristics

J. Vanhellemont, E. Simoen, and C. Claeys

Appl. Phys. Lett. 66, 2894 (1995); http://dx.doi.org/10.1063/1.113465 (3 pages) | Cited 21 times

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A simple procedure is proposed to calculate the minority carrier recombination lifetime from forward diode I/V characteristics. By using diodes with strongly different perimeter to area ratio and by taking into account the diode ideality, more accurate lifetime values are obtained. The thus obtained values are in excellent agreement with the ones obtained from microwave absorption measurements of photoconductive decay as is illustrated on Czochralski substrates with different oxygen densities and pretreatments. © 1995 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Subquantum limit Josephson magnetometry

Mark Jeffery

Appl. Phys. Lett. 66, 2897 (1995); http://dx.doi.org/10.1063/1.113466 (3 pages) | Cited 2 times

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A reactive dc Josephson inductive kinetic amplifier (IKA) has been proposed to measure weak dc magnetic fields with high sensitivity. In this letter the quantum noise intrinsic to the IKA is analyzed and the device is shown to operate as a back‐action evasion magnetic flux amplifier capable of subquantum limit detection of weak dc magnetic fields. © 1995 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.40.-n Fluctuation phenomena
07.55.Ge Magnetometers for magnetic field measurements

Improved corrosion resistance of cation substituted YBa2Cu3O7−δ

Ji‐Ping Zhou, Steven M. Savoy, Rung‐Kuang Lo, Jianai Zhao, Mark Arendt, Y. T. Zhu, A. Manthiram, and John T. McDevitt

Appl. Phys. Lett. 66, 2900 (1995); http://dx.doi.org/10.1063/1.113467 (3 pages) | Cited 15 times

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A cosubstitution of Ca2+ for Y3+and La3+ for Ba2+ in YBa2Cu3O7−δ is found to improve the corrosion resistance of this high‐ Tc superconductor. The reactivity characteristics of bulk and thin film samples of Y1−zCazBa2−yLayCu3O7−δ indicate that the corrosion resistance in water environments increases with increasing degree of cation substitution up to z=y=0.4. The composition of Y0.6Ca0.4Ba1.6La0.4Cu3O6.96 with a Tc of 80 K is found to be at least 100 times more stable than YBa2Cu3O6.94. Possible contributing factors that could be responsible for the marked improvement in the corrosion resistance of this high‐Tc phase are discussed. © 1995 American Institute of Physics.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
74.72.-h Cuprate superconductors

Grain boundary misorientations and percolative current paths in high‐Jc powder‐in‐tube (Bi,Pb)2Sr3Ca3Cu3Ox

A. Goyal, E. D. Specht, D. M. Kroeger, T. A. Mason, D. J. Dingley, G. N. Riley, and M. W. Rupich

Appl. Phys. Lett. 66, 2903 (1995); http://dx.doi.org/10.1063/1.113468 (3 pages) | Cited 29 times

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Grain orientations and grain boundary misorientations in high‐Jc, powder‐in‐tube (PIT) (Bi,Pb)2Sr2Ca2Cu3Ox (Bi‐2223) were determined using electron backscatter Kikuchi diffraction and x‐ray microdiffraction. Data collected from over 113 spatially correlated grains, resulting in 227 grain boundaries, show that over 40% of the boundaries are Σ1 or small angle (less than 15°). In addition, 8% of the boundaries are within the Brandon criterion for CSLs (sigma larger than 1 and less than 50). Grain boundary ‘‘texture maps’’ derived from the electron microscope image and orientation data reveal the presence of percolative paths between low energy boundaries.
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84.71.Mn Superconducting wires, fibers, and tapes
74.72.-h Cuprate superconductors
74.81.Bd Granular, melt-textured, amorphous, and composite superconductors

Domain topography of antiferromagnetic Cr2O3 by second‐harmonic generation

M. Fiebig, D. Fröhlich, G. Sluyterman v. L., and R. V. Pisarev

Appl. Phys. Lett. 66, 2906 (1995); http://dx.doi.org/10.1063/1.113699 (3 pages) | Cited 39 times

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The interference of the time‐invariant magnetic‐dipole contribution with the time‐noninvariant electric‐dipole contribution to the second harmonic (SH) provides a mechanism which is sensitive to the reduction of symmetry of Cr2O3 by antiferromagnetic ordering of spins. A pronounced polarization dependence of the SH on the sign of the order parameter is observed in the 1.7–3.1 eV spectral range. The effect is used to study the domain structure of Cr2O3 by use of a CCD camera. Exposure times in the order of minutes are sufficient to yield a high‐resolution image of domains in samples of 10 mm2. © 1995 American Institute of Physics.
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75.60.Ch Domain walls and domain structure
75.50.Ee Antiferromagnetics

Diamond growth in premixed propylene‐oxygen flames

Ho Seon Shin and David G. Goodwin

Appl. Phys. Lett. 66, 2909 (1995); http://dx.doi.org/10.1063/1.113700 (3 pages) | Cited 6 times

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Diamond film growth in low‐pressure premixed propylene/oxygen flames is demonstrated. Well‐faceted films are grown at a pressure of 180 Torr and a fuel/oxygen ratio of 0.47. Using propylene as the fuel may greatly improve the economics of flame synthesis of diamond, since propylene is an order of magnitude cheaper than acetylene. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
FREE

Comment on ‘‘In situ photoluminescence spectral study of porous Si in HF aqueous solution’’ [Appl. Phys. Lett. 65, 1653 (1994)]

M. Davison, K. P. O’Donnell, U. M. Noor, D. Uttamchandani, and L. E. A. Berlouis

Appl. Phys. Lett. 66, 2912 (1995); http://dx.doi.org/10.1063/1.113701 (2 pages) | Cited 2 times

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78.55.Hx Other solid inorganic materials
78.40.Ha Other nonmetallic inorganics
FREE

Response to ‘‘Comment on ‘In situ photoluminescence spectral study of porous Si in HF aqueous solution’ ’’ [Appl. Phys. Lett. 66, 2914 (1995)]

T. Wadayama, S. Yamamoto, and A. Hatta

Appl. Phys. Lett. 66, 2913 (1995); http://dx.doi.org/10.1063/1.113702 (1 page) | Cited 1 time

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Abstract Unavailable
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78.55.Hx Other solid inorganic materials
78.40.Ha Other nonmetallic inorganics
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