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29 May 1995

Volume 66, Issue 22, pp. 2929-3071

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Silicon nanostructures produced by laser direct etching

M. Müllenborn, H. Dirac, and J. W. Petersen

Appl. Phys. Lett. 66, 3001 (1995); http://dx.doi.org/10.1063/1.114257 (3 pages) | Cited 24 times

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A laser direct‐write process has been applied to structure silicon on a nanometer scale. In this process, a silicon substrate, placed in a chlorine ambience, is locally heated above its melting point by a continuous‐wave laser and translated by high‐resolution direct‐current motor stages. Only the molten silicon reacts spontaneously with the molecular chlorine, resulting in trenches with the width of the laser‐generated melt. Trenches have been etched with a width of less than 70 nm. To explain the functional dependence of the melt size on absorbed power, the calculations based on a two‐phase steady state heat model are presented, taking the temperature‐dependent thermal conductivities and optical parameters into account. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
79.20.Ds Laser-beam impact phenomena

Many‐body Coulomb effects in room‐temperature II–VI quantum well semiconductor lasers

W. W. Chow and S. W. Koch

Appl. Phys. Lett. 66, 3004 (1995); http://dx.doi.org/10.1063/1.114258 (3 pages) | Cited 19 times

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This letter investigates the gain medium properties in II–VI blue‐green quantum well semiconductor lasers, including band structure and carrier interactions in the electron‐hole plasma are found to be significantly more important than in infrared III–V lasers. In particular, the interband Coulombic enhancement of the optical transitions, together with a band gap renormalization result in an increase in gain and a reduction in the antiguiding or linewidth enhancement factor. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.66.Hf II-VI semiconductors

Inverse staggered polycrystalline and amorphous silicon double structure thin film transistors

Takashi Aoyama, Kazuhiro Ogawa, Yasuhiro Mochizuki, and Nobutake Konishi

Appl. Phys. Lett. 66, 3007 (1995); http://dx.doi.org/10.1063/1.114259 (3 pages) | Cited 3 times

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Inverse staggered polycrystalline silicon (poly‐Si) and hydrogenated amorphous silicon (a‐Si:H) double structure thin film transistors (TFTs) are fabricated based on the conventional a‐Si:H TFT process for the application to liquid crystal display panels with peripheral driver circuits integration. After depositing a thin (20 nm) a‐Si:H using the plasma chemical vapor deposition technique at 300 °C, Ar+ and XeCl (300 mJ/cm2) lasers are irradiated on the peripheral driver circuits areas, and then thick a‐Si:H (200 nm) and n+Si layers are deposited again. Field effect mobilities of 10 and 0.5 cm2/V s are obtained for the laser annealed poly‐Si and the a‐Si:H (without annealing) TFTs, respectively. © 1995 American Institute of Physics.
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85.30.Tv Field effect devices
42.79.Kr Display devices, liquid-crystal devices

p+ doping of Si by Al diffusion upon annealing Al/n‐Si(111)7×7

H. J. Wen, M. Prietsch, A. Bauer, M. T. Cuberes, I. Manke, and G. Kaindl

Appl. Phys. Lett. 66, 3010 (1995); http://dx.doi.org/10.1063/1.114260 (3 pages) | Cited 1 time

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A novel method for the formation of a p+‐layer underneath a Si(111)7×7 surface is presented. It is based on annealing of an epitaxial Al/n‐Si(111) interface up to complete desorption of the Al film. This leads to a strong potential variation within the substrate, as observed in Si‐2p core‐level photoemission spectra with variable sampling depth, while scanning‐tunneling microscopy reveals an unchanged 7×7 reconstructed surface. These observations are consistent with a p+ doping of (4±2)×1018/cm3 and a lowering of the surface Fermi level by (0.06±0.02) eV. © 1995 American Institute of Physics.  
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61.72.uf Ge and Si
66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation

Thickness effect on hydrogen plasma treatment on polycrystalline silicon thin films

Bor Wen Liou, Yi Huang Wu, Chung Len Lee, and Tan Fu Lei

Appl. Phys. Lett. 66, 3013 (1995); http://dx.doi.org/10.1063/1.114261 (2 pages)

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This letter studies the hydrogen plasma effects on the resistivity, effective free carrier concentration, and mobility of As+‐ and BF+2‐doped polycrystalline silicon (polysilicon) thin films of various thicknesses. It is found that the resistivity increases while the effective free carrier concentration decreases after the plasma treatment as the thickness of the polysilicon film decreases. The mobility typically tends to decrease for the thicker (≳60 nm) polysilicon film, but to increase for the thinner (<60 nm) polysilicon film. © 1995 American Institute of Physics.  
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61.72.Yx Interaction between different crystal defects; gettering effect
61.72.uf Ge and Si
73.61.Jc Amorphous semiconductors; glasses
81.65.-b Surface treatments

Electron traps in β‐SiC grown by chemical vapor deposition on silicon (100) substrates

K. Zekentes, M. Kayiambaki, and G. Constantinidis

Appl. Phys. Lett. 66, 3015 (1995); http://dx.doi.org/10.1063/1.114262 (3 pages) | Cited 5 times

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Deep electron traps in heteroepitaxial β‐SiC films grown on Si(100) substrates by chemical vapor deposition were investigated. Capacitance deep level transient spectroscopy revealed the presence of several traps, the majority of which are rather process‐induced as expected for a highly defective material such as β‐SiC grown heteroepitaxially on Si. Samples of different origin as well as various surface treatments have been used to determine traps intrinsic to β‐SiC heteroepitaxial material. Three main traps were detected, independently of the surface treatment, at 0.32, 0.52, and 0.56 eV below the conduction‐band minimum. Comparison with theoretically predicted activation energies for the single native defects did not permit the assignment of the observed traps to any of these defects. © 1995 American Institute of Physics.
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71.55.Ht Other nonmetals
73.61.Le Other inorganic semiconductors

Reduced interface state density after photocurrent oscillations and electrochemical hydrogenation of n‐Si(111): A surface photovoltage investigation

S. Rauscher, Th. Dittrich, M. Aggour, J. Rappich, H. Flietner, and H. J. Lewerenz

Appl. Phys. Lett. 66, 3018 (1995); http://dx.doi.org/10.1063/1.114263 (3 pages) | Cited 17 times

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The electrochemical H‐termination process of n‐Si(111) surfaces in aqueous 0.1 M NH4F pH 4.0 solution was optimized for a two step procedure consisting of the surface smoothing during oxidation in the photocurrent oscillating potential region followed by the oxide etching and passivation of the surface atoms with hydrogen. The hydrogen termination was monitored in situ measuring the dark current transient and evaluated using pulsed surface photovoltage technique. An unusually low density of interface states it=1×1010 eV−1 cm−2 was obtained by the hydrogen termination on n‐Si(111) surfaces following this procedure with better results than applying an electropolishing treatment. © 1995 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
81.65.-b Surface treatments

Saturation behavior of the defect density in hydrogenated amorphous silicon by continuous and pulsed light illumination

Jong‐Hwan Yoon and H. L. Kim

Appl. Phys. Lett. 66, 3021 (1995); http://dx.doi.org/10.1063/1.114264 (3 pages)

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Measurements of the saturated defect density in hydrogenated amorphous silicon by continuous and pulsed light illumination are reported. It is observed that the saturation value of the defect density by pulsed light illumination is about one order of magnitude higher than by continuous light illumination in device quality films. It has been suggested that this result would be due to the difference in the light‐induced defect annealing rate between two cases, in which it is found that the light‐induced annealing rate by pulsed light is lower than by continuous light with a similar intensity. © 1995 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
71.55.Jv Disordered structures; amorphous and glassy solids

Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

H. Sunamura, N. Usami, Y. Shiraki, and S. Fukatsu

Appl. Phys. Lett. 66, 3024 (1995); http://dx.doi.org/10.1063/1.114265 (3 pages) | Cited 137 times

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We present a photoluminescence (PL) study on the growth mode changeover during growth of Ge on Si(100) substrates. Intense PL signals originating from both the flat Ge layer and the three‐dimensional (3D) Ge islands are observed from Si/Ge/Si quantum wells with various Ge coverage. The onset of the 3D island formation is determined to be 3.7 monolayers (ML). It is also found that the 3D islands grow with only 3.0 ML of the flat Ge layer retained. This implies that only the 3.0 ML Ge is thermodynamically stable on Si(100) and hence corresponds to the ‘‘equilibrium’’ critical thickness. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors

Determination of oxide fixed charge at the top and bottom Si/SiO2 interfaces of silicon‐on‐insulator devices

Emil Arnold

Appl. Phys. Lett. 66, 3027 (1995); http://dx.doi.org/10.1063/1.114266 (3 pages)

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A method for characterizing thin‐silicon‐on‐insulator (SOI) devices is described that allows separate determination of the oxide fixed charges at the top and bottom Si/SiO2 interfaces, as well as the average dopant concentration in the SOI layer. These are obtained from the characteristics of a depletion‐type SOI MOS transistor, without the need to rely on the knowledge of the flatband voltage. The technique is based on the determination of the bias voltage at which the SOI film and its interfaces become completely depleted (under conditions where minority carriers are not available), and the voltages at which either interface becomes inverted (inversion charge being provided by illumination). The application of this technique is demonstrated experimentally and verified by numerical simulations. © 1995 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
85.30.Tv Field effect devices

Electrical impedance measurements of polymer light‐emitting diodes

I. H. Campbell, D. L. Smith, and J. P. Ferraris

Appl. Phys. Lett. 66, 3030 (1995); http://dx.doi.org/10.1063/1.114267 (3 pages) | Cited 38 times

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We report electrical impedance measurements of polymer light‐emitting diodes employing the soluble, conjugated polymer poly[2‐methoxy, 5‐(2′‐ethyl‐hexyloxy)‐1,4‐phenylene vinylene] (MEH‐PPV) as the light‐emitting layer. The diode structures were metal‐polymer‐metal structures utilizing thin gold as the transparent, positive contact, and calcium as the negative contact. The devices were fabricated using undoped, polymer active layers ∼40 nm thick. The polymer light‐emitting diodes are accurately modeled as a resistor and capacitor in parallel for frequencies from 100 Hz to 1 MHz and for bias conditions from reverse bias to forward current densities of 0.1 A/cm2. The diode capacitance as a function of bias voltage is qualitatively different from conventional Schottky or p‐n junction diodes; in reverse bias, the polymer layer is fully depleted and the capacitance is independent of bias; at small forward bias, traps are charged near the metallic contacts and the capacitance increases; under large forward bias, with significant electron and hole injection, the traps are neutralized and the capacitance decreases. From the magnitude of the initial increase in capacitance with forward bias the trap density is estimated to be only a few times 1016 cm−3. © 1995 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
73.40.Rw Metal-insulator-metal structures

Electrical field enhanced thermal quenching of a prominent thermally stimulated current peak in semi‐insulating GaAs

Z‐Q. Fang and D. C. Look

Appl. Phys. Lett. 66, 3033 (1995); http://dx.doi.org/10.1063/1.114268 (3 pages) | Cited 6 times

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Detailed experimental results are presented for a ‘‘thermal quenching’’ of thermal stimulated current signals in the most prominent trap in undoped semi‐insulating (SI) GaAs, T5 with an activation energy of 0.27–0.31 eV. A possible model for the thermal quenching of T5 is discussed, emphasizing the thermally stimulated nature of the quenching process, the effect of electric field and the formation of high‐field domains. The thermal quenching of T5 can frequency be observed in SI GaAs grown by the vertical gradient freeze (VGF) technique, or by the liquid encapsulated Czochralski (LEC) technique under certain conditions. © 1995 American Institute of Physics.
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71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors

Phosphorus doping of silicon by proton induced nuclear reactions

Isabel Abril, Rafael Garcia‐Molina, Konstantin M. Erokhin, and Nicolay P. Kalashnikov

Appl. Phys. Lett. 66, 3036 (1995); http://dx.doi.org/10.1063/1.114269 (3 pages) | Cited 1 time

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We propose a method to dope silicon with phosphorus by means of the nuclear resonant reaction 30Si(p,γ)31P, which takes place when a natural silicon target is bombarded with a few MeV proton beam. This alternative method considerably reduces the usual target damage produced by the more commonly used direct phosphorus implantation. © 1995 American Institute of Physics.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects

Hot carrier relaxation in GaAs V‐groove quantum wires

A. C. Maciel, C. Kiener, L. Rota, J. F. Ryan, U. Marti, D. Martin, F. Morier‐Gemoud, and F. K. Reinhart

Appl. Phys. Lett. 66, 3039 (1995); http://dx.doi.org/10.1063/1.114270 (3 pages) | Cited 21 times

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We have measured hot carrier relaxation in GaAs V‐groove quantum wires using time‐resolved photoluminescence. Relaxation between confined one‐dimensional subbands is clearly observed on the time scale of several hundred picoseconds. A simulation of the experiment using a hybrid multisubband Monte Carlo method which includes hot phonon and degeneracy effects gives good agreement with the measurements. © 1995 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Nitrogen and fluorine ion implantation in InxGa1−xN

J. C. Zolper, S. J. Pearton, C. R. Abernathy, and C. B. Vartuli

Appl. Phys. Lett. 66, 3042 (1995); http://dx.doi.org/10.1063/1.114271 (3 pages) | Cited 7 times

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Implantation of N+ ions in n‐type InxGa1−xN (0.37≤x≤1.0) produces maximum increases in sheet resistance of 50–100 times upon annealing in the range of 400–600 °C. The dominant deep state introduced by implantation and annealing have ionization energies of ∼0.35–0.39 eV and therefore are relatively high in the band gap of the InGaN. There was no evidence for chemical deep levels associated with the implanted N+ or F+. The implant isolation behavior of n‐type InGaN appears analogous to that of InP and InGaAs. © 1995 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
71.55.Eq III-V semiconductors
61.80.Jh Ion radiation effects

Enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As asymmetric double quantum wells

M. F. Krol, R. P. Leavitt, J. T. Pham, B. P. McGinnis, and N. Peyghambarian

Appl. Phys. Lett. 66, 3045 (1995); http://dx.doi.org/10.1063/1.114272 (3 pages) | Cited 4 times

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We report enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As asymmetric double quantum wells (ADQWs) by the use of real space electron transfer. The electron concentration in both the wide and narrow wells is investigated by field dependent absorption and photoluminescence spectroscopy. The results are compared to absorption changes in an undoped ADQW structure that utilizes the quantum confined stark effect. The doped modulator exhibits a significantly larger red shift with applied field than the undoped structure. © 1995 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.Jq Electro-optical effects

High quantum efficiency for a porous silicon light emitting diode under pulsed operation

Jan Linnros and Nenad Lalic

Appl. Phys. Lett. 66, 3048 (1995); http://dx.doi.org/10.1063/1.114273 (3 pages) | Cited 62 times

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A high quantum efficiency for a porous silicon light emitting diode (LED) is demonstrated under pulsed operation. The LED is fabricated from a p+nn+ structure by anodic/hydrofluoric etching followed by deposition of a transparent gold contact. The LED shows a rectifying behavior and emits orange‐red light under forward bias with a spectral width significantly narrower than the corresponding photoluminescence spectrum. By calibrated measurements, we here demonstrate electroluminescence external quantum efficiencies of ∼0.2% under pulsed operation corresponding to internal quantum efficiencies of a few percent. © 1995 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.55.Hx Other solid inorganic materials

Bowing parameters for zinc‐blende Al1−xGaxN and Ga1−xInxN

A. F. Wright and J. S. Nelson

Appl. Phys. Lett. 66, 3051 (1995); http://dx.doi.org/10.1063/1.114274 (3 pages) | Cited 59 times

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First‐principles calculations have been used to determine bowing parameters for disordered zinc‐blende Al1−xGaxN and Ga1−xInxN. The direct transition at Γ is found to bow downward for both materials with parameters +0.53 and +1.02 eV, respectively, while the Γ‐to‐X transition bows upward for Al1−xGaxN (parameter −0.10 eV) and downward for Ga1−xInxN (parameter +0.38 eV). The similarity of the calculated bulk zinc‐blende and wurtzite Γ‐point transitions also allows estimates to be made of the energy gap versus composition for wurtzite alloys. © 1995 American Institute of Physics.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Effects of electron cyclotron resonance etching on the ambient (100) GaAs surface

O. J. Glembocki, J. A. Tuchman, K. K. Ko, S. W. Pang, A. Giordana, R. Kaplan, and C. E. Stutz

Appl. Phys. Lett. 66, 3054 (1995); http://dx.doi.org/10.1063/1.114275 (2 pages) | Cited 6 times

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Photoreflectance has been used to study the electronic behavior of the ambient (100) GaAs surface and its modification by etching in a Cl2/Ar plasma generated by an electron‐cyclotron resonance (ECR) source. We observed two pinning positions for ambient (100) GaAs, with n‐GaAs pinning near midgap and p‐GaAs pinning near the valance band. ECR etching shifts the Fermi level of p‐GaAs toward midgap, but has little effect on n‐GaAs. The surface modification is most influenced by the rf power. Auger electron spectroscopy indicates that the etching increases As at the GaAs/oxide interface. We suggest that the Ga/As ratio controls the position of the Fermi level. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Low‐temperature anneal of the divacancy in p‐type silicon: A transformation from V2 to VxOy complexes?

M.‐A. Trauwaert, J. Vanhellemont, H. E. Maes, A.‐M. Van Bavel, G. Langouche, and P. Clauws

Appl. Phys. Lett. 66, 3056 (1995); http://dx.doi.org/10.1063/1.114276 (2 pages) | Cited 23 times

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Deep level transient spectroscopy of electron irradiated p‐type silicon reveals a defect level at Ev+0.19 eV, which during anneal treatments at 200 °C gradually transforms into a band with Ev+0.24 eV. Both energy levels however, are reported in literature to be the donor level of the divacancy. In the present study it is proposed that during the low‐temperature anneal the divacancy interacts with oxygen, forming a V2O complex. During heat treatments at temperatures in the range between 250 and 450 °C a further shift of the deep level to higher energy positions is observed which might be related with other vacancy‐oxygen complexes. © 1995 American Institute of Physics.
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71.55.Cn Elemental semiconductors
61.72.Cc Kinetics of defect formation and annealing

Key elements for a sensitive 77 K direct current superconducting quantum interference device magnetometer

L. P. Lee, M. Teepe, V. Vinetskiy, R. Cantor, and M. S. Colclough

Appl. Phys. Lett. 66, 3058 (1995); http://dx.doi.org/10.1063/1.114277 (3 pages) | Cited 12 times

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We have made sensitive dc superconducting quantum interference device (SQUID) magnetometers that operate at 77 K have been made. By using bicrystal grain boundary Josephson junctions and a single layer of YBa2Cu3O7 thin film with optimized processing and an optimized directly coupled design, we have produced magnetometers with very low noise and a large transfer function. At 77 K, the transfer function is 100 μV/Φ0; the white field noise of the magnetometer is less than 10 fT/√Hz above 10 kHz, rising to 26 fT/√Hz at 1 Hz. The corresponding white noise energy has the low value of 2×10−31 J s; a value very similar to that of commercial Nb SQUIDS. Key elements required to achieve this performance are discussed. © 1995 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
07.55.Ge Magnetometers for magnetic field measurements
74.78.-w Superconducting films and low-dimensional structures

Giant room‐temperature magnetoresistance in the FeRh alloy

P. A. Algarabel, M. R. Ibarra, C. Marquina, A. del Moral, J. Galibert, M. Iqbal, and S. Askenazy

Appl. Phys. Lett. 66, 3061 (1995); http://dx.doi.org/10.1063/1.114278 (3 pages) | Cited 31 times

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The magnetoresistance of the FeRh alloy has been measured in the temperature range 200–300 K using high pulsed magnetic fields up to 36 T. This compound shows a first‐order magnetic transition from the antiferromagnetic (AF) low‐temperature state to the ferromagnetic (F) high‐temperature state at TAF–F=405 K. The F state is very close in energy to the AF state and can be reached by applying a magnetic field. The measurements made within the AF state show that the AF–F transition is accompanied by a giant magnetoresistance effect (ΔR/R≊50%). © 1995 American Institute of Physics.
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72.15.Gd Galvanomagnetic and other magnetotransport effects
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Bb Fe and its alloys

Sub‐10 nm lithography and development properties of inorganic resist by scanning electron beam

J. Fujita, H. Watanabe, Y. Ochiai, S. Manako, J. S. Tsai, and S. Matsui

Appl. Phys. Lett. 66, 3064 (1995); http://dx.doi.org/10.1063/1.114279 (3 pages) | Cited 11 times

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We report the self‐developing properties of an AlF3‐doped LiF inorganic resist under irradiation by a scanning electron beam with an energy of 20–50 keV are reported. The self‐development properties strongly depended on both AlF3 concentration and film thickness. To explain this behavior, we presented an exposure model that takes into account a balance between a carbon contamination and a diffusion process. By optimizing resist qualities, we were able to delineate 5 nm linewidth patterns with 60 nm periodicity using a 30 kV electron beam. © 1995 American Institute of Physics.
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61.80.Fe Electron and positron radiation effects
85.40.Hp Lithography, masks and pattern transfer
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
FREE

Comment on ‘‘Influence of barrier height distribution on the parameters of Schottky diodes’’ [Appl. Phys. Lett. 65, 575 (1994)]

Zs. J. Horváth and Vo Van Tuyen

Appl. Phys. Lett. 66, 3067 (1995); http://dx.doi.org/10.1063/1.114280 (1 page) | Cited 2 times

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Abstract Unavailable
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ei Rectification
85.30.De Semiconductor-device characterization, design, and modeling
FREE

Response to ‘‘Comment on ‘Influence of barrier height distribution on the parameters of Schottky diodes’ ’’ [Appl. Phys. Lett. 66, 3067 (1995)]

E. Dobročka and J. Osvald

Appl. Phys. Lett. 66, 3068 (1995); http://dx.doi.org/10.1063/1.114281 (1 page) | Cited 1 time

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Abstract Unavailable
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ei Rectification
85.30.De Semiconductor-device characterization, design, and modeling
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