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12 Jun 1995

Volume 66, Issue 24, pp. 3239-3384

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Frequency modulation characteristics of gain‐guided AlGaAs/GaAs vertical‐cavity surface‐emitting lasers

D. V. Kuksenkov, H. Temkin, and S. Swirhun

Appl. Phys. Lett. 66, 3239 (1995); http://dx.doi.org/10.1063/1.113390 (3 pages) | Cited 3 times

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We describe measurements of dynamic wavelength shift in single mode vertical cavity surface emitting lasers operating at 850 nm. Small signal modulation experiments yield a linewidth enhancement factor 3.7<α<4.5, depending on the modulation frequency. Under large signal modulation we measure Δν×Δτ∼3.6 for gain switched pulses. The dependence of dynamic chirp on the pulse width is accurately modeled by numerical solution of rate equations. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Quantum cascade laser with plasmon‐enhanced waveguide operating at 8.4 μm wavelength

Carlo Sirtori, Jerome Faist, Federico Capasso, Deborah L. Sivco, Albert L. Hutchinson, and Alfred Y. Cho

Appl. Phys. Lett. 66, 3242 (1995); http://dx.doi.org/10.1063/1.113391 (3 pages) | Cited 71 times

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A unipolar cascade laser operating at 8.4 μm wavelength is reported. The structure, grown by molecular beam epitaxy in the AlInAs/GaInAs material system, contains a 25‐stage coupled‐quantum‐well active region. The waveguide design is optimized to enhance optical confinement and reduce losses associated with the interface plasmon mode, by taking advantage of the dispersion of the refractive index of the contact layer near the plasma frequency. The peak optical power is 30 mW and the threshold current density 2.8 kA/cm2, at a heat‐sink temperature of 100 K and the highest operating temperature is 130 K. The slope efficiency at 100 K is ∼0.1 W/A, corresponding to a differential quantum efficiency of 5.4% per stage. This work, combined with previous results on shorter wavelength quantum cascade lasers, demonstrates that the wavelength of these new light sources can be tailored over a wide range by changing the active layers’ thicknesses using the same materials. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Near‐field optical microscopy in liquids

Hiroshi Muramatsu, Norio Chiba, Katsunori Homma, Kunio Nakajima, Tatsuaki Ataka, Satoko Ohta, Akihiro Kusumi, and Masamichi Fujihira

Appl. Phys. Lett. 66, 3245 (1995); http://dx.doi.org/10.1063/1.113392 (3 pages) | Cited 60 times

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The scanning near‐field optical microscopy imaging of specimens in liquid and of cultured cells in aqueous solutions is reported. A scanning near‐field optical/atomic‐force microscope (SNOM‐AFM) was developed, in which the scanning of an optical‐fiber probe cantilever over the specimen was controlled by noncontact mode AFM (dynamic mode AFM). This imaging mode reduces damage to the probe and soft specimens. The resonant frequency of the probe cantilever decreased 20% to ≊14 kHz and the Q factor decreased by a factor of 8 to ≊30 in water, compared with these values in air, which was sufficient to perform SNOM‐AFM imaging in liquid. © 1995 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Model for photoinduced defects and photorefractivity in optical fibers

I. Abdulhalim

Appl. Phys. Lett. 66, 3248 (1995); http://dx.doi.org/10.1063/1.113393 (3 pages) | Cited 4 times

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A model is proposed for the kinetics of photoinduced defects and the photorefractivity in germanosilicate fibers. It is based on the existence of short lived large energy fluctuations which produce transient traps for carriers that release their energy and enhance defects creation. The enhancement of the photorefractivity with the presence of hydrogen is explained as a result of two mechanisms, that involve the increase in the number of weak bonds and the stabilization of the created defects. In some special cases analytic solutions are found that explain reasonably well the experiments. © 1995 American Institute of Physics.
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61.43.Fs Glasses
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
61.72.Cc Kinetics of defect formation and annealing

Optimized structure for InGaAsP/GaAs 808 nm high power lasers

H. J. Yi, J. Diaz, L. J. Wang, I. Eliashevich, S. Kim, R. Williams, M. Erdtmann, X. He, E. Kolev, and M. Razeghi

Appl. Phys. Lett. 66, 3251 (1995); http://dx.doi.org/10.1063/1.113394 (3 pages) | Cited 8 times

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The optimized structure for the InGaAsP/GaAs quaternary material lasers (λ=0.808 μm) is investigated for the most efficient high‐power operation through an experiment and theoretical study. A comparative study is performed of threshold current density Jth and differential efficiency ηd dependence on cavity length (L) for two different laser structures with different active layer thickness (150 and 300 Å) as well as for laser structures with different multiple quantum well structures. A theoretical model with a more accurate formulation for minority leakage phenomenon provides explanation for the experimental results and sets general optimization rules for other lasers with similar restrictions on the band gap and refractive index difference between the active layer and the cladding layers. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Two‐dimensional infrared photonic band gap structure based on porous silicon

U. Grüning, V. Lehmann, and C. M. Engelhardt

Appl. Phys. Lett. 66, 3254 (1995); http://dx.doi.org/10.1063/1.113395 (3 pages) | Cited 77 times

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We have fabricated a two‐dimensional photonic band structure based on macroporous silicon with individual gaps for both polarizations in the infrared region between 250 and 500 cm−1 (20–40 μm). A square lattice of circular air rods with a lattice constant of 8 μm was etched 340 μm deep in an n‐type silicon substrate by electrochemical pore formation in hydrofluoric acid. The transmission spectra between 50 and 650 cm−1 were in good agreement with the theoretical calculated structure. The pore formation technique should allow the fabrication of photonic lattices with a complete two‐dimensional band gap in the middle and near infrared. © 1995 American Institute of Physics.
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42.25.-p Wave optics
42.82.Cr Fabrication techniques; lithography, pattern transfer

Determination of the time constant of fast photorefractive materials using the phase modulation technique

B. Sugg, K. V. Shcherbin, and J. Frejlich

Appl. Phys. Lett. 66, 3257 (1995); http://dx.doi.org/10.1063/1.113396 (3 pages) | Cited 4 times

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We present a method to determine the dielectric relaxation time using a phase‐modulation technique. The predictions were checked using a GaAs crystal. The experimental results agree well with the theory. © 1995 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Jq Electro-optical effects

Near field probe microscopy of porous silicon: Observation of spectral shifts in photoluminescence of small particles

J. K. Rogers, F. Seiferth, and M. Vaez‐Iravani

Appl. Phys. Lett. 66, 3260 (1995); http://dx.doi.org/10.1063/1.113397 (3 pages) | Cited 13 times

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Imaging of topography and locally induced photoluminescence of anodically etched porous silicon is performed using a force regulated near field scanning optical microscope. The photoluminescence signal on as‐prepared wafers shows strong evidence for inherent, rather than purely geometrically induced, variations. Images of small particles display distributions of regions of relatively strong luminescence on the 100 nm lateral scale. Highly localized photoluminescence spectra obtained on these particles show spectral shifts as high as 50 nm compared with those obtained on as‐prepared porous silicon wafer. © 1995 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Tunable, single frequency erbium fiber laser using an overlay bandpass filter

A. Gloag, N. Langford, K. McCallion, and W. Johnstone

Appl. Phys. Lett. 66, 3263 (1995); http://dx.doi.org/10.1063/1.113398 (3 pages) | Cited 7 times

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We describe a single frequency, unidirectional erbium fiber ring laser. Wavelength selection is performed by a ‘‘continuous fiber’’ filter of the fiber to planar waveguide coupler type. Varying the refractive index experienced by the exposed surface of the filter allowed the single longitudinal mode output from the laser to be tuned, discretely, from 1556–1561 nm with a resolution limited linewidth of 52 kHz. © 1995 American Institute of Physics.
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42.55.Wd Fiber lasers
42.60.Fc Modulation, tuning, and mode locking

Effects of quantum well subband structure on the temperature stability of vertical‐cavity semiconductor lasers

Weng W. Chow, Kent D. Choquette, and Paul L. Gourley

Appl. Phys. Lett. 66, 3266 (1995); http://dx.doi.org/10.1063/1.113399 (3 pages)

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This letter investigates the effects of band‐structure, band‐filling, and many‐body interactions on the temperature behavior of a vertical‐cavity surface‐emitting laser. Significant improvement in temperature stability of the laser output is predicted in the presence of gain arising from high lying quantum well subbands. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Near field optical latent imaging with the photon tunneling microscope

Herschel M. Marchman and Anthony E. Novembre

Appl. Phys. Lett. 66, 3269 (1995); http://dx.doi.org/10.1063/1.113400 (3 pages) | Cited 11 times

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We present a simple optical technique for measuring features formed in radiation sensitive materials (photoresists) after exposure. The monitoring of photoresist patterns after exposure, but before development is known as latent imaging. Optical techniques used in the past for latent image detection have really only sensed scattered intensity levels from periodic patterns and not spatially resolved images of the features themselves. The application of photon tunneling microscopy to imaging of latent resist patterns exposed using point‐source x‐ray and midultraviolet illumination will be demonstrated. © 1995 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
07.79.Fc Near-field scanning optical microscopes

Formation of self‐aligned holes in an arbitrary pattern in silicon substrate

Hi‐Deok Lee, Ho‐Jun Lee, Choong‐Ki Kim, and Chul‐Hi Han

Appl. Phys. Lett. 66, 3272 (1995); http://dx.doi.org/10.1063/1.113401 (3 pages) | Cited 1 time

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A self‐aligning etch method for silicon substrates is presented. A hole pattern is defined on the front side of the silicon substrate while etching of the hole takes place from the back side through the application of a current from the front side of the silicon substrate to a cathode electrode in a solution of HF, HNO3, and H2O. As the etching proceeds, the etched pattern in the back side gradually becomes self‐aligned with the front side pattern of the silicon substrate. Twenty five circular holes arranged in a 5×5 array are formed in a boron‐doped (100) silicon substrate. The etch method provides control over hole dimensions which are 520 μm in diameter and spaced 520 μm apart. The self‐aligning property of the etch method enables the formation of different shaped holes. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
82.45.-h Electrochemistry and electrophoresis

Corona‐assisted flame synthesis of ultrafine titania particles

Srinivas Vemury and Sotiris E. Pratsinis

Appl. Phys. Lett. 66, 3275 (1995); http://dx.doi.org/10.1063/1.113402 (3 pages) | Cited 39 times

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Synthesis of ultrafine titania particles is investigated in a diffusion flame aerosol reactor in the presence of a gaseous electric discharge (corona) created by two needle electrodes. The corona wind flattens the flame and reduces the particle residence time at high temperatures, resulting in smaller primary particle sizes and lower level of crystallinity. Increasing the applied potential from 5 to 8 kV reduces the particle size from 50 to 25 nm and the rutile content from 20 to 8 wt %. Coronas provide a clean and simple technique that facilitates gas phase synthesis of nanosized materials with controlled size and crystallinity. © 1995 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.10.Bk Growth from vapor

Structural studies of tetrathiafulvalene–tetracyanoquinodimethane thin films by scanning tunneling microscopy

Norihiko Ara, Akira Kawazu, Hidemi Shigekawa, Kiyoshi Yase, and Masamichi Yoshimura

Appl. Phys. Lett. 66, 3278 (1995); http://dx.doi.org/10.1063/1.113403 (3 pages) | Cited 11 times

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Thin films of tetrathiafulvanene–tetracyanoquinodimethane (TTF‐TCNQ) grown on mica substrates by vacuum deposition were studied by scanning tunneling microscopy (STM). STM images displayed the usual arrangement of alternative TTF and TCNQ columns aligned parallel to the crystal b axis. However, in addition to the same phase as that of a TTF‐TCNQ bulk crystal, a new phase is observed. In this new phase the tilt angles the TCNQ and TTF molecular planes make with the a×b axis are different from those observed in the normal phase. This new phase can be explained by the introduction of a stacking fault on the surface. © 1995 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.55.-a Thin film structure and morphology

Formation of ‘‘single crystalline films’’ of ferroelectric copolymers of vinylidene fluoride and trifluoroethylene

Hiroji Ohigashi, Kenji Omote, and Teruhisa Gomyo

Appl. Phys. Lett. 66, 3281 (1995); http://dx.doi.org/10.1063/1.113730 (3 pages) | Cited 39 times

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We find that a highly double‐oriented film of practically unlimited size can be obtained from a uniaxially drawn film of P(VDF/TrFE) by crystallization in the paraelectric phase with its surfaces free from any constraint other than tensile stress along the chain axis. The c axis (the chain axis) and the [110] axis in the orthorhombic system of the poled crystalline film are parallel to the stretching axis and perpendicular to the film plane, respectively. Contrary to conventional crystalline polymer films, the present film has no amorphous region and no lamellar crystal. The film exhibits highly anisotropic characteristics in optical, mechanical, and piezoelectric properties. © 1995 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.55.-g Dielectric thin films
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Si+ implantation: A pretreatment method for diamond nucleation on a Si wafer

Jie Yang, Xiaowei Su, Qijin Chen, and Zhangda Lin

Appl. Phys. Lett. 66, 3284 (1995); http://dx.doi.org/10.1063/1.113731 (3 pages) | Cited 11 times

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Diamond films have been obtained by the hot‐filament chemical vapor deposition method on a silicon wafer. The substrates were preimplanted by a Si+ ion beam (ion energy 25 keV, implantation dosage 2×1017 Si/cm2). X‐ray diffraction, scanning electron microscopy, and Raman spectroscopy were used to characterize the structure of the synthesized films. The mechanisms for diamond nucleation on a Si wafer have been discussed. Surface stress is believed to be one of the most important factors for low pressure diamond nucleation on the Si wafer. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Mechanism of bias‐enhanced nucleation of diamond on Si

J. Robertson, J. Gerber, S. Sattel, M. Weiler, K. Jung, and H. Ehrhardt

Appl. Phys. Lett. 66, 3287 (1995); http://dx.doi.org/10.1063/1.113732 (3 pages) | Cited 83 times

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The nucleation of diamond on Si is enhanced for negative substrate bias of 200–250 V. We show that the ion flux is the critical factor causing the enhanced nucleation. The ion energy distribution has a maximum at about 80 eV, the optimum to subplant C ions into a‐C. We propose that subplantation causes deposition of nanocrystalline graphitic C, and that diamond nucleates where the graphitic planes are locally oriented perpendicular to the surface. An atomic model is proposed that allows a matching of the diamond, graphite, and Si lattice. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Formation of covalent solid CNx compounds by high dose nitrogen implantation into carbon thin films

Huoping Xin, W‐ping Xu, Xiaohong Shi, Hong Zhu, Chenglu Lin, and Shichang Zou

Appl. Phys. Lett. 66, 3290 (1995); http://dx.doi.org/10.1063/1.113733 (2 pages) | Cited 8 times

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Our preliminary studies show that covalent solid CNx compounds can be synthesized by high dose nitrogen implantation into carbon thin films. 100 keV N+ ions at a dosage of 1.2×1018 cm−2 were implanted at different temperatures. The samples were evaluated by x‐ray photoelectron spectroscopy (XPS), x‐ray diffraction analysis, and Fourier transform infrared absorption spectroscopy (FTIR). N(1s) core level line XPS analyses show the existence of two different N(1s) bonding states, corresponding to the nitrogen of the C–N covalent bonding state and free state nitrogen, respectively. More importantly, it can be clearly seen that the content of C–N covalent bonding state in the samples is increased with increasing of the implanting temperature of samples. When implantation was performed at 500 °C, C(1s) XPS studies show the existence of three different C(1s) bonding states, corresponding to graphite, i‐carbon, and the carbon of C–N covalent bonding state, respectively, and FTIR analyses indicate that there is an absorption band near 2200 cm−1 assigned to the C≡N covalent bonding. © 1995 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Jj Ion and electron beam-assisted deposition; ion plating
61.80.Jh Ion radiation effects

Observation of electronic correlation effect in C60 adsorbed on an (0001) surface of 2H–MoS2 by scanning tunneling microscopy

D. Zhao, T. Chen, and L. Wang

Appl. Phys. Lett. 66, 3292 (1995); http://dx.doi.org/10.1063/1.113734 (3 pages) | Cited 3 times

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Scanning tunneling microscopy (STM) studies of monolayer coverage of C60 molecules on a 2H–MoS2 (0001) surface reveal electronic features on the molecules that are rather different from those observed on metal and other semiconductor surfaces. The STM current contrast of the adsorbed C60 is dominated by that of the underlying crystalline lattice at low bias voltages. The observations can be understood by considering (1) a weak adsorption of C60 and (2) an electronic correlation effect between the substrate surface and the molecule. All essential aspects of the experimental STM results are quantitatively reproduced by our calculation. © 1995 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
61.46.-w Structure of nanoscale materials
73.20.At Surface states, band structure, electron density of states

Contact mode atomic force microscopy imaging of nanometer‐sized particles

T. Junno, S. Anand, K. Deppert, L. Montelius, and L. Samuelson

Appl. Phys. Lett. 66, 3295 (1995); http://dx.doi.org/10.1063/1.113735 (3 pages) | Cited 15 times

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A general problem in scanning probe microscopy (SPM) of small particles is that the probe itself moves and removes the particles as it tries to image them. This fact has strongly limited the use of SPM in the field of nm‐sized particles, and high‐resolution electron microscopy has been the only alternative for detailed imaging. Here, we take advantage of a moderate sintering at 350 °C to effectively stabilize nanometer‐sized metallic particles on a semiconductor surface, allowing characterization by SPM. Using this technique, we have been able to successfully image aerosol deposited Ag particles of sizes around 35 nm by contact mode atomic force microscopy (AFM). This new sample preparation technique for SPM overcomes the problems of probe‐induced particle movement during scanning and is proposed as a method to ‘‘freeze’’ artificial nanostructures produced by manipulation of particles with the AFM probe. © 1995 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.79.Lh Atomic force microscopes
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Epitaxial growth of SrTiO3 thin films by metalorganic chemical vapor deposition

S. R. Gilbert, B. W. Wessels, D. B. Studebaker, and T. J. Marks

Appl. Phys. Lett. 66, 3298 (1995); http://dx.doi.org/10.1063/1.113736 (3 pages) | Cited 7 times

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Epitaxial SrTiO3 thin films were prepared using low pressure metalorganic chemical vapor deposition. The volatile metalorganic precursors employed were Sr(hexafluoroacetyl acetonate)2⋅tetraglyme and titanium tetraisopropoxide. Single‐phase, epitaxial films were deposited on (100)LaAlO3 at a temperature of 810 °C. In‐plane epitaxy was verified using x‐ray phi scan analysis. The SrTiO3 films exhibit a significant tetragonal distortion with c/a=1.010(±1.6×10−4) at room temperature. No evidence of fluorine contamination is noted by x‐ray diffraction or by Auger electron spectroscopy measurements. © 1995 American Institute of Physics.  
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Atomic diffusion‐induced deep levels near ZnSe/GaAs(100) interfaces

A. D. Raisanen, L. J. Brillson, L. Vanzetti, A. Bonanni, and A. Franciosi

Appl. Phys. Lett. 66, 3301 (1995); http://dx.doi.org/10.1063/1.113737 (3 pages) | Cited 21 times

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Luminescence spectroscopy measurements of ZnSe/GaAs(100) heterojunctions grown by molecular beam epitaxy reveal the formation of deep levels near ‘‘buried’’ interfaces upon thermal annealing. A pronounced emission at 1.9–2.0 eV appears at temperatures in the 300–400 °C range depending on the ZnSe growth conditions with a constant activation energy of 1.10 eV. X‐ray photoemission spectroscopy indicates a correlation between this deep level and atomic diffusion of Ga and Zn across the heterointerface. Zn‐rich ZnSe growth conditions dramatically reduce this emission, highlighting the importance of local interface composition on thermal stability. © 1995 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.55.Hx Other solid inorganic materials
68.35.Fx Diffusion; interface formation

Picosecond carrier lifetime in GaAs implanted with high doses of As ions: An alternative material to low‐temperature GaAs for optoelectronic applications

A. Krotkus, S. Marcinkevicius, J. Jasinski, M. Kaminska, H. H. Tan, and C. Jagadish

Appl. Phys. Lett. 66, 3304 (1995); http://dx.doi.org/10.1063/1.113738 (3 pages) | Cited 42 times

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Show Abstract
Nonstoichiometric GaAs obtained by implantation with 2 MeV arsenic ions at 1015 cm−2 dose is studied. As‐implanted samples show a <200 fs lifetime of photocarriers and low resistivity due to hopping, with mobility less than 1 cm2/V s. Annealing of the samples at 600 °C leads to substantial recovery of postimplant damage, as seen from Rutherford backscattering channeling spectra and mobility increase to about 2000 cm2/V s, but photocarrier lifetime is still about 1 ps. These parameters are similar to those of low‐temperature GaAs annealed at 600 °C, and make arsenic implanted GaAs an interesting material for optoelectronic applications. © 1995 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors
61.80.Jh Ion radiation effects
73.61.Ey III-V semiconductors

Quantum interference effect and electric field domain formation in quantum well infrared photodetectors

Yuanjian Xu, Ali Shakouri, and Amnon Yariv

Appl. Phys. Lett. 66, 3307 (1995); http://dx.doi.org/10.1063/1.113739 (3 pages) | Cited 9 times

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An observation of quantum interference effect in photocurrent spectra of a weakly coupled bound‐to‐continuum multiple quantum well photodetector is reported. This effect persists even at high biases where the Kronig–Penney minibands of periodic superlattice potential in the continuum are destroyed. Our results show that electrons remain coherent over a distance of 40–50 nm. The observation was used to investigate electric field domain formation induced by sequential resonant tunneling in the superlattice. A large off‐resonant energy level alignment between two neighboring wells in the high field domain was observed. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
73.40.Gk Tunneling
73.50.Pz Photoconduction and photovoltaic effects

Ge/Pd (Zn) Ohmic contact scheme on p‐InP based on the solid phase regrowth principle

L. C. Wang, Moon‐Ho Park, Fei Deng, A. Clawson, S. S. Lau, D. M. Hwang, and C. J. Palmstrøm

Appl. Phys. Lett. 66, 3310 (1995); http://dx.doi.org/10.1063/1.113740 (3 pages) | Cited 20 times

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A contact metallization scheme of Ge/Pd(Zn), based on the solid‐phase regrowth principle, has been developed for the formation of Ohmic contact on p‐InP. Typical contact resistivities of low 10−4 to low 10−5 Ω cm2 can be obtained after annealing at temperatures higher than 400 °C. Cross‐sectional transmission electron microscopy study confirmed the solid‐phase regrowth process in the InP substrate. Precipitates of trapped materials during solid phase regrowth have also been observed. A solid phase regrowth model is proposed to rationalize the electrical and metallurgical properties. This solid phase regrowth process is expected to form low resistance Ohmic contact on other In‐based compound semiconductors. © 1995 American Institute of Physics.
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73.40.Cg Contact resistance, contact potential
81.15.Np Solid phase epitaxy; growth from solid phases
73.40.Ns Metal-nonmetal contacts
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