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23 Jan 1995

Volume 66, Issue 4, pp. 399-531

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Improvement of photodetection quantum efficiency by noiseless optical preamplification

K. Bencheikh, O. Lopez, I. Abram, and J. A. Levenson

Appl. Phys. Lett. 66, 399 (1995); http://dx.doi.org/10.1063/1.114201 (3 pages) | Cited 7 times

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We demonstrate experimentally that a phase‐sensitive optical parametric amplifier used to amplify the incoming optical signal on a lossy photodiode improves the noise figure of detection. At high parametric gains this noise figure tends to 0 dB corresponding to a detection quantum efficiency approaching 100%. This result contrasts with the performance of preamplification by a classical laserlike amplifier in which the noise figure tends to 3 dB giving a saturation of the detection quantum efficiency at 50%. © 1995 American Institute of Physics.
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42.79.Pw Imaging detectors and sensors
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.50.Lc Quantum fluctuations, quantum noise, and quantum jumps

600 fs 10.6 μm infrared pulse generation with radiation‐damaged GaAs reflection switch

A. Y. Elezzabi, J. Meyer, and M. K. Y. Hughes

Appl. Phys. Lett. 66, 402 (1995); http://dx.doi.org/10.1063/1.114036 (3 pages) | Cited 5 times

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Ultrafast infrared laser pulses at 10.6 μm as short as 600±200 fs have been produced using optical semiconductor switching. This is achieved by using GaAs damaged with a 180 keV H+ dose of 1×1016 cm−2 as an optical–optical switch. Cross‐correlation measurements are used to obtain the pulse shapes. We find that the generated infrared reflectivity pulse widths are proportional to the H+ ion dose to the power −0.4. This allows a precise control over the generated pulse durations. © 1995 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.Jh Ion radiation effects

Spatial subharmonics of moving gratings in photorefractive materials

Sugie Shim, Chong Hoon Kwak, and El‐Hang Lee

Appl. Phys. Lett. 66, 405 (1995); http://dx.doi.org/10.1063/1.114037 (3 pages) | Cited 3 times

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A simple theory based on a nonlinear differential equation derived from Kukhtarev’s materials equations and the coupled mode analysis of wave equation is developed to describe the spatial subharmonics in the photorefractive moving gratings. The optimum detuning frequency of K/2 spatial subharmonic resonance is calculated and compared with experimental data. It is found that our simple theory describes the experimental data very well. © 1995 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Formation of single‐domain layers in multidomain LiNbO3 crystals by proton exchange and quick heat treatment

Yong‐yuan Zhu, Shi‐ning Zhu, Zhi‐yong Zhang, Hong Shu, Jing‐fen Hong, Chuan‐zhen Ge, and Nai‐ben Ming

Appl. Phys. Lett. 66, 408 (1995); http://dx.doi.org/10.1063/1.114038 (2 pages) | Cited 6 times

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Experimental studies on the formation of single‐domain layers in a multidomain z‐cut LiNbO3 crystal plate by proton exchange followed by quick heat treatment were performed. It was found that the direction of the spontaneous polarization in the single‐domain layer points to the inside of the plate. To explain this phenomenon, an internal electric field model was proposed which is related to the proton concentration gradient. © 1995 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.82.Et Waveguides, couplers, and arrays

Upconverting Tm3+ doped Ba–Y–Yb–F thin film waveguides for visible and ultraviolet light sources

James M. Chwalek and Gustavo R. Paz‐Pujalt

Appl. Phys. Lett. 66, 410 (1995); http://dx.doi.org/10.1063/1.114039 (3 pages) | Cited 6 times

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We report the results of Tm3+ doped Ba–Y–Yb–F thin film planar waveguides in glassy form, which produced red, green, blue, and ultraviolet upconverted luminescence when pumped by infrared radiation at λ=960 nm. The films of nominal composition BaYYbF8 doped with 1% Tm have been deposited with both thermal and e‐beam evaporation techniques on substrates of fused silica, Si, and GaAs. Planar waveguiding was demonstrated for the films deposited on fused silica. Optimal deposition conditions with respect to the ability of the films to produce upconverted luminescence and low propagation loss are discussed. © 1995 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.55.Hx Other solid inorganic materials
61.72.up Other materials

All‐optical switching in rare‐earth doped channel waveguide

Cid B. de Araújo, A. S. L. Gomes, and R. Srivastava

Appl. Phys. Lett. 66, 413 (1995); http://dx.doi.org/10.1063/1.114040 (3 pages) | Cited 3 times

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The operation of an all‐optical switch in a rare‐earth doped channel waveguide is described. The switching mechanism is based on an optically induced intramodal energy exchange, driven by a resonantly enhanced nonlinearity of a Nd3+ ion. Switching times around 410 μs at a repetition rate of 1 kHz was demonstrated. © 1995 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Hp Optical processors, correlators, and modulators

Effect of dispersion on the reflectivity of an asymmetric Fabry–Pérot étalon

J. F. Hefferman and J. Hegarty

Appl. Phys. Lett. 66, 416 (1995); http://dx.doi.org/10.1063/1.114041 (3 pages) | Cited 1 time

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We have shown that the spectral properties of an asymmetric Fabry–Pérot étalon, with a multiple quantum well cavity, are very sensitive to dispersion in the refractive index. We also show that this effect can be used to measure the dispersion around the exciton absorption features in the GaAs/Al0.35Ga0.65As multiple quantum well. © 1995 American Institute of Physics.
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78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.79.Hp Optical processors, correlators, and modulators
42.65.Pc Optical bistability, multistability, and switching, including local field effects

White light emitting SrS:Pr electroluminescent devices fabricated via atomic layer epitaxy

W. Kong, J. Fogarty, R. Solanki, and R. T. Tuenge

Appl. Phys. Lett. 66, 419 (1995); http://dx.doi.org/10.1063/1.114042 (3 pages) | Cited 2 times

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Atomic layer epitaxy has been employed to fabricate white light emitting ZnS:Pr and SrS:Pr thin film electroluminescent devices. Electrical and optical properties of these devices have been characterized and compared. It is found that SrS:Pr devices are significantly brighter and more efficient than ZnS:Pr devices. The effect of ZnS buffer layers on the electrical characteristics of the SrS electroluminescent devices is discussed. © 1995 American Institute of Physics.
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85.60.Jb Light-emitting devices
68.55.-a Thin film structure and morphology
78.60.Fi Electroluminescence

Enhanced electron emission from n‐type porous Si field emitter arrays

M. Takai, M. Yamashita, H. Wille, S. Yura, S. Horibata, and M. Ototake

Appl. Phys. Lett. 66, 422 (1995); http://dx.doi.org/10.1063/1.114043 (2 pages) | Cited 12 times

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Tip surfaces of n‐type Si field emitter arrays (FEAs) have been anodized to obtain n‐type porous layers on the top surfaces of the Si emitters. The gate voltage required for emission could be lowered by tip anodization and the emission current was enhanced by a factor of up to 10. Fowler–Nordheim plots for the FEAs before and after tip anodization revealed that the work function of the tip could be decreased and the field conversion factor could be increased by the process. © 1995 American Institute of Physics.  
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79.70.+q Field emission, ionization, evaporation, and desorption
81.65.-b Surface treatments
73.30.+y Surface double layers, Schottky barriers, and work functions

Effects of Mn2+ distribution in Cu‐modified ZnS on the concentration quenching of electroluminescence brightness

Il Yu and Mamoru Senna

Appl. Phys. Lett. 66, 424 (1995); http://dx.doi.org/10.1063/1.114044 (3 pages) | Cited 17 times

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Change in the distribution state of Mn2+ before and after annealing was examined by electron spin resonance (ESR) in order to elucidate the electroluminescence properties of Mn‐doped ZnS modified by Cu. Formation of Mn2+ ion pairs and clusters, as determined from the hyperfine structure of ESR profiles, was revealed to be dominant for concentration quenching. © 1995 American Institute of Physics.
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78.60.Fi Electroluminescence
71.55.Gs II-VI semiconductors
61.72.S- Impurities in crystals

Stable glow discharge for synthesis of carbon nanotubes

X. K. Wang, X. W. Lin, V. P. Dravid, J. B. Ketterson, and R. P. H. Chang

Appl. Phys. Lett. 66, 427 (1995); http://dx.doi.org/10.1063/1.114045 (3 pages) | Cited 5 times

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The use of a stable glow discharge for the synthesis of carbon nanotubes is reported. Bundles of buckytubes are synthesized with remarkably large diameters (up to 200 μm). The bundles are evenly spaced, parallel, and occupy the entire central region of the deposited rod. High resolution electron microscopy (HREM) images of the deposited rod produced by the glow discharge revealed higher yield and improved quality buckytubes as compared to those produced by an arc discharge. The behavior of the two deposition modes (glow and arc) has been compared and their effects on the formation of buckytubes are discussed. © 1995 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.46.-w Structure of nanoscale materials

Fullerene formation during production of chemical vapor deposited diamond

Lee Chow, Hao Wang, Stephen Kleckley, Terry K. Daly, and Peter R. Buseck

Appl. Phys. Lett. 66, 430 (1995); http://dx.doi.org/10.1063/1.114046 (3 pages) | Cited 7 times

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We report a novel method for fullerene formation during diamond synthesis via a hot filament, chemical vapor deposition (CVD) procedure. The fullerenes occur in the soot that forms as a by‐product on the edges and rear surface of the substrate holder, where the temperature does not favor diamond deposition. Mass spectrometry of the soot shows a peak having a mass to charge ratio corresponding to C60. From typical concentrations of gaseous species in the diamond‐growing CVD chamber, we conclude that hydrocarbon species such as CH3 or C2H2 may be the precursors for the fullerene in the CVD chamber. The atomic hydrogen in the gaseous species is believed to play an important role in removing the hydrogen from hydrocarbon to form the all‐carbon fullerene. Our observations also suggest that fullerenes produced in the CVD diamond growth chamber play a role in diamond nucleation on foreign substrates. © 1995 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Exact solutions of balance equation governing ion‐beam‐induced composition changes and sputtering

Peter Sigmund

Appl. Phys. Lett. 66, 433 (1995); http://dx.doi.org/10.1063/1.114047 (3 pages) | Cited 1 time

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Analytic solutions have been found for a system of nonlinear integro‐differential equations describing compositional changes and sputtering of materials under ion bombardment in planar geometry. These solutions refer to the stationary (high‐fluence) limit and were found by adopting feasible expressions for intermediate quantities from which both input and output can be derived. Explicit examples include sputtering, collisional mixing, and relaxation, but the method allows inclusion of a wider variety of effects. © 1995 American Institute of Physics. Multicomponent materials like alloys, compounds, and isotopic mixtures undergo composition changes under ion bombardment as a result of preferential sputtering and Gibbsian segregation at the surface, ion implantation and mixing in the region penetrated by the incident beam, and defect‐assisted processes that may affect a wider region. A theoretical scheme describing compositional changes in planar geometry was presented many years ago. Its ingredients were (i) a relocation operator accounting for atomic mixing and preferential sputtering, and (ii) a relaxation term ensuring stability of the target as well as adjustment of the depth scale such that the target surface is located at depth x=0 at any time. The scheme has been expanded recently such as to allow inclusion of all athermal and thermal processes leading to compositional changes. The essence is a set of nonlinear integro‐differential equations of the form
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects

Charge transfer limitations in δ‐doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors

B. Jogai

Appl. Phys. Lett. 66, 436 (1995); http://dx.doi.org/10.1063/1.114048 (3 pages) | Cited 8 times

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The charge transfer between the δ‐doped region and channel of an AlxGa1−xAs/InyGa1−yAs pseudomorphic high electron mobility transistor (p‐HEMT) is explored theoretically. The model is based on a self‐consistent solution of the k⋅p Hamiltonian and Poisson equation and explicitly accounts for surface states. It is shown that heavily doping the δ layer does not guarantee a large amount of electrons in the channel. At higher doping, an increasing number of electrons are retained in the δ‐layer, reducing the charge‐transfer ratio. It is further shown that charge transfer is drastically reduced when the cap layer is recessed to form the gate. © 1995 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.30.Tv Field effect devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Probing of the quantum dot size distribution in CdTe‐doped glasses by photoluminescence excitation spectroscopy

C. R. M. de Oliveira, A. M. de Paula, F. O. Plentz Filho, J. A. Medeiros Neto, L. C. Barbosa, O. L. Alves, E. A. Menezes, J. M. M. Rios, H. L. Fragnito, C. H. Brito Cruz, and C. L. Cesar

Appl. Phys. Lett. 66, 439 (1995); http://dx.doi.org/10.1063/1.114049 (3 pages) | Cited 20 times

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We studied confinement effects in CdTe quantum dots by means of photoluminescence excitation spectroscopy. We show that by changing the detection energy we can resolve the spectrum of quantum dots of different sizes inside their much broader size distribution in CdTe‐doped glass. The spectra obtained show several well‐resolved lines. There is excellent agreement between the photoluminescence excitation spectra peak energies and calculations of the confined energy transitions based on a modified multiband envelope function model. © 1995 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates

B. Lambert, Y. Toudic, Y. Rouillard, M. Gauneau, M. Baudet, F. Alard, I. Valiente, and J. C. Simon

Appl. Phys. Lett. 66, 442 (1995); http://dx.doi.org/10.1063/1.114050 (3 pages) | Cited 21 times

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We report the molecular beam epitaxy growth of (Al) GaAsSb/AlAsSb Bragg reflectors around the 1.55 μm wavelength region. Mirrors with 96% reflectivity have been achieved by using ten pairs of quarter wavelength layers. This demonstrates the capability of the (Al) GaAsSb/AlAsSb system to achieve efficient Bragg mirrors lattice matched to InP substrates. © 1995 American Institute of Physics.  
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78.66.Fd III-V semiconductors
42.79.Bh Lenses, prisms and mirrors

Photoluminescence and electroluminescence of SiGe dots fabricated by island growth

R. Apetz, L. Vescan, A. Hartmann, C. Dieker, and H. Lüth

Appl. Phys. Lett. 66, 445 (1995); http://dx.doi.org/10.1063/1.114051 (3 pages) | Cited 127 times

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We present a study of photo‐ and electroluminescence of SiGe dots buried in Si and compare them with structures containing smooth SiGe layers. The SiGe dot structures were fabricated by low‐pressure chemical vapor deposition using the Stranski–Krastanov growth mode (island growth). We show that the localization of excitons in the dots leads to an increase of the luminescence efficiency at low excitation compared to smooth SiGe layers (e.g., quantum wells). At higher excitation the efficiency decreases which is attributed to nonradiative Auger recombination processes in the dots. © 1995 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.60.Fi Electroluminescence
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
68.55.-a Thin film structure and morphology

Three‐stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy

Silva K. Theiss, D. M. Chen, and J. A. Golovchenko

Appl. Phys. Lett. 66, 448 (1995); http://dx.doi.org/10.1063/1.114052 (3 pages) | Cited 28 times

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We use the tunneling microscope to measure the surface lattice spacing of Ge islands grown on Si(111) as a function of their height. It changes in three stages: (I) (0–50 layers tall) Rapid relaxation from near the bulk Si value, at the end of which the lattice spacing atop some of the islands exceeds that of bulk Ge. (II) (50–80 layers) Rapid decrease in surface lattice spacing, to nearly 2% below the bulk Ge value. (III) (≳80 layers) Gradual relaxation to the bulk value. Additional observations of dislocations and analysis of island widths are used to explain this behavior. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Anti‐phase direct bonding and its application to the fabrication of InP‐based 1.55 μm wavelength lasers on GaAs substrates

Y. Okuno, K. Uomi, M. Aoki, T. Taniwatari, M. Suzuki, and M. Kondow

Appl. Phys. Lett. 66, 451 (1995); http://dx.doi.org/10.1063/1.114053 (3 pages) | Cited 23 times

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We propose anti‐phase direct bonding and report on the first demonstration of its application to device fabrication. Cross‐sectional observation by high‐resolution transmission electron microscope showed that InP and GaAs wafers bonded at the atomic level and the misfit dislocations were localized at the bonding interface. Then InP‐based 1.55 μm wavelength lasers were fabricated on GaAs. The performance of the lasers was approximately equal to that of the lasers formed by in‐phase direct bonding. Moreover, stable operation was possible for more than 1000 h at 50 °C. © 1995 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
42.55.Px Semiconductor lasers; laser diodes

Ultralow interface recombination velocity in ordered–disordered GaInP2 double heterostructures

A. van Geelen, R. A. J. Thomeer, and L. J. Giling

Appl. Phys. Lett. 66, 454 (1995); http://dx.doi.org/10.1063/1.114054 (3 pages) | Cited 4 times

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The minority charge‐carrier lifetime of undoped GaInP2 has been investigated in disordered–ordered–disordered GaInP2 double heterostructures. It is found that minority charge carriers can be confined to the ordered GaInP2 if the growth is performed on a (100) 6° off towards [111] substrate. Minority charge‐carrier lifetimes of 1.2±0.35 μs are measured. These high lifetimes are the result of the extremely low interface recombination velocity of the disordered–ordered GaInP2 interface. © 1995 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Constructing band diagrams of semiconductor heterojunctions

M. Leibovitch, L. Kronik, E. Fefer, V. Korobov, and Yoram Shapira

Appl. Phys. Lett. 66, 457 (1995); http://dx.doi.org/10.1063/1.114055 (3 pages) | Cited 12 times

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A novel approach for constructing the band diagrams of semiconductor heterojunctions is discussed and illustrated. It is based on a simple measurement of band discontinuities, Debye length and the width of the space–charge region at the heterojunction interface. Monitoring the changes in the surface potential during heterojunction formation makes it possible to identify the contributions of the interface states and dipole. The approach is illustrated by the results of experiments performed on the InP/In2O3 heterojunction. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.30.+y Surface double layers, Schottky barriers, and work functions

Photoconductive properties of chemical vapor deposited diamond switch under high electric field strength

Hitoki Yoneda, Ken‐ichi Ueda, Yumi Aikawa, Kazuhiro Baba, and Nobuaki Shohata

Appl. Phys. Lett. 66, 460 (1995); http://dx.doi.org/10.1063/1.114056 (3 pages) | Cited 10 times

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Photoconductive properties of diamond optical switch made by chemical vapor deposition method were investigated. A new configuration of the diamond gap was proposed to reduce the surface leakage current and avoid surface flashover. This technology made it possible to apply static high electric field up to 2×106 V/cm. The dependence of the mobility‐lifetime product (μτ) on the grain size was measured for a wide range of electric field. The μτ value was increased to be linearly proportional to the electric field for every grain size sample, and no saturation was measured even at a high electric field of E=3×105 V/cm. Larger grain size samples had larger μτ values. The grain size dependence was attributed to the decreasing of the mobility or the lifetime inside the grain not due to the increasing recombination ratio at the grain boundary in smaller grain size samples. © 1995 American Institute of Physics.
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85.60.-q Optoelectronic devices
72.40.+w Photoconduction and photovoltaic effects
72.20.Ht High-field and nonlinear effects

Spiral growth of GaSb on (001) GaAs using molecular beam epitaxy

Berinder Brar and Devin Leonard

Appl. Phys. Lett. 66, 463 (1995); http://dx.doi.org/10.1063/1.114057 (3 pages) | Cited 18 times

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Atomic force microscopy is employed to obtain images of the surface of GaSb epilayers grown on (001) GaAs using molecular beam epitaxy. The images reveal a surface that consists of micron size mounds that are approximately 4 nm high. A stepped surface is clearly observed on the mounds with a single step edge that originates from a screw dislocation at the center of the mound and moves out to the edge in a spiral fashion. The surface structure of the spiral mounds is observed to depend on the growth temperature of the GaSb epilayer, presumably as a result of a shorter diffusion length of the group III adatoms for lower substrate temperatures. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Effect of spin‐orbit split‐off band on optical gain in AlGaInP/GaInP strained quantum wells

K. Domen, H. Ishikawa, M. Sugawara, M. Kondo, and T. Tanahashi

Appl. Phys. Lett. 66, 466 (1995); http://dx.doi.org/10.1063/1.114058 (3 pages) | Cited 1 time

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The optical gains in AlGaInP/GaInP strained quantum wells using valence band structures by the second‐order k⋅p method, with and without spin‐orbit split‐off (SO) band effect have been calculated. It was easy to overestimate the optical gain without considering the SO‐band effect, because a small spin‐orbit splitting energy for GaInP makes higher nonparabolicity of the valence bands. The SO‐band effect is particularly significant under tensile strain, since the SO band makes the effective mass very large due to the large interaction between the SO and light hole bands. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors

Study of photoluminescence in nanocrystalline silicon/amorphous silicon multilayers

Song Tong, Xiang‐na Liu, and Xi‐mao Bao

Appl. Phys. Lett. 66, 469 (1995); http://dx.doi.org/10.1063/1.114059 (3 pages) | Cited 40 times

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We report in this letter the observation of visible photoluminescence (PL) at room temperature from hydrogenated nanocrystalline silicon (nc‐Si:H)/amorphous silicon (a‐Si:H) multilayers (MLs) prepared in a plasma enhanced chemical vapor deposition system without any postprocessing. The PL peak wavelength can be controlled, blueshifting from 750 to 708 nm, through reducing the width of the nc‐Si:H sublayers from 4.0 to 2.1 nm. Quantum size effect in nc‐Si:H sublayers of the ML is responsible for the emission above the band gap of bulk crystal Si. © 1995 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors
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