APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

6 Feb 1995

Volume 66, Issue 6, pp. 653-777

Page 1 of 2 Pages Next Page | Jump to Page

Poly(p‐phenylene vinylene)/tris(8‐hydroxy) quinoline aluminum heterostructure light emitting diode

C. C. Wu, J. K. M. Chun, P. E. Burrows, J. C. Sturm, M. E. Thompson, S. R. Forrest, and R. A. Register

Appl. Phys. Lett. 66, 653 (1995); http://dx.doi.org/10.1063/1.114119 (3 pages) | Cited 42 times

Full Text: | Download PDF

Show Abstract
Results are presented from polymer/molecular organic heterostructure light emitting diodes composed of a layer of the conjugated conducting polymer poly(p‐phenylene vinylene) (PPV), and a layer of fluorescent molecular compound tris(8‐hydroxy) quinoline aluminum (Alq). The external quantum efficiency of these heterostructure LEDs is ∼0.1%, which is over one order of magnitude higher than that of simple PPV LEDs. The electroluminescence (EL) spectra indicate that both materials in the device emit comparable amounts of light. The dependence of the EL spectra on the layer thicknesses and its independence on bias suggest that neutral excitons are formed in the Alq, far from the PPV/Alq interface, and subsequently diffuse into the PPV layer. © 1995 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

Operation and dynamics of ZnSe/ZnMgSSe double heterostructure blue laser diode at room temperature

Hiroyuki Okuyama, Eisaku Kato, Satoshi Itoh, Norikazu Nakayama, Toyoharu Ohata, and Akira Ishibashi

Appl. Phys. Lett. 66, 656 (1995); http://dx.doi.org/10.1063/1.114120 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Room‐temperature operation of ZnSe‐active‐layer double heterostructure laser diode has succeeded. The lasing wavelength was 471 nm. The emission energy shift with the increasing current is explained by the band filling and the band shrinkage. The threshold carrier density is calculated to be 4×1018 cm−3. The mechanism of the stimulated emission of II–VI double heterostructure laser diode is concluded to be the recombination of the electron‐hole plasma. © 1995 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
78.45.+h Stimulated emission

Phase‐matched frequency doubling in an aluminum nitride waveguide with a tunable laser source

D. Blanc, A. M. Bouchoux, C. Plumereau, A. Cachard, and J. F. Roux

Appl. Phys. Lett. 66, 659 (1995); http://dx.doi.org/10.1063/1.114121 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
Frequency doubling is observed in an aluminum nitride waveguide deposited by dc reactive magnetron sputtering. Phase‐matching conditions are obtained by tuning the wavelength of an optical parametric oscillator pumped by a pulsed Nd:YAG laser. The maximum second harmonic generation efficiency is obtained for the TM0(ω)‐TM2(2ω) conversion process and is estimated to be around 4×10−8 W−1. © 1995 American Institute of Physics.
Show PACS
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Spectrally and temporally resolved laser emission from vertical cavity surface emitting lasers

M. B. Sinclair, P. L. Gourley, T. M. Brennan, B. E. Hammons, and L. R. Dawson

Appl. Phys. Lett. 66, 662 (1995); http://dx.doi.org/10.1063/1.114091 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
The laser emission spectra of several vertical cavity surface emitting lasers, following pulsed laser excitation, have been measured with a temporal resolution of <1 ps. With broadband excitation, emission was observed from multiple longitudinal modes when pumped well above threshold. The output‐pulse decay times of modes located near the edges of the high reflecting zone were significantly shorter than the decay times of modes located near zone center. The zone‐edge modes were not observed when narrow‐band photoexcitation was used, indicating that broadband excitation results in seeding of the laser cavity. © 1995 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
78.47.-p Spectroscopy of solid state dynamics

(2+1)‐dimensional fundamental spatial dark soliton

Shan‐liang Liu, Wen‐zheng Wang, and Jing‐zhi Xu

Appl. Phys. Lett. 66, 665 (1995); http://dx.doi.org/10.1063/1.114092 (2 pages)

Full Text: | Download PDF

Show Abstract
We give the analytical fundamental dark soliton solutions of the (2+1)‐dimensional nonlinear Schrodinger equation [(2+1)‐D NSE]. The solutions reduce to (1+1)‐D dark soliton solutions when the width of soliton in one transverse direction is much wider than that in the other direction, which is in good agreement with the experimental observation of the dark spatial solitons. © 1995 American Institute of Physics.  
Show PACS
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Tg Optical solitons; nonlinear guided waves

Origin of the poling‐induced optical loss in a nonlinear optical polymeric waveguide

C. C. Teng, M. A. Mortazavi, and G. K. Boudoughian

Appl. Phys. Lett. 66, 667 (1995); http://dx.doi.org/10.1063/1.114093 (3 pages) | Cited 30 times

Full Text: | Download PDF

Show Abstract
The excess waveguiding optical loss of nonlinear optical polymers induced by poling was studied both experimentally and theoretically. The loss was found to be caused by the inhomogeneities in the orientation of the nonlinear optical moiety after poling and is strongly dependent on the uniformity of the guiding and cladding films and the magnitude of the poling field. © 1995 American Institute of Physics.
Show PACS
42.82.Et Waveguides, couplers, and arrays
42.70.Jk Polymers and organics
42.65.An Optical susceptibility, hyperpolarizability
78.20.Jq Electro-optical effects

Novel broad‐band excitation of Er3+ luminescence in chalcogenide glasses

S. Q. Gu, S. Ramachandran, E. E. Reuter, D. A. Turnbull, J. T. Verdeyen, and S. G. Bishop

Appl. Phys. Lett. 66, 670 (1995); http://dx.doi.org/10.1063/1.114094 (3 pages) | Cited 23 times

Full Text: | Download PDF

Show Abstract
Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy carried out on bulk samples of Er2S3‐doped Ge33As12Se55 glasses demonstrate that Er3+ is incorporated in optically active sites in the glass and gives rise to a broad ∼1500–1600 nm 4I13/2→4I15/2 PL spectrum similar to those observed in Er‐doped oxide glasses. The novel PLE spectrum of the 1550 nm Er3+PL band comprises a superposition of relatively sharp peaks which are attributable to the characteristic 4I15/2→4I11/2 and 4I15/2→4I9/2 Er3+ absorption transitions at 810 and 980 nm, respectively, and a broad, below‐gap PLE band characteristic of the weak defect or impurity absorption tails in chalcogenide glasses which decrease exponentially with decreasing photon energy. At high energy the exponentially rising Urbach absorption edge, which leads to competing nonradiative decay mechanisms, imposes an exponentially decreasing slope on the PLE spectrum. © 1995 American Institute of Physics.
Show PACS
78.55.Hx Other solid inorganic materials
42.70.Hj Laser materials
78.47.-p Spectroscopy of solid state dynamics

Organic electroluminescent devices fabricated using a diamine doped MgF2 thin film as a hole‐transporting layer

Shizuo Tokito and Yasunori Taga

Appl. Phys. Lett. 66, 673 (1995); http://dx.doi.org/10.1063/1.114095 (3 pages) | Cited 27 times

Full Text: | Download PDF

Show Abstract
Organic electroluminescent (EL) devices have been fabricated which have a MgF2 layer doped with N, N′‐diphenyl‐N, N′‐bis(3‐methylphenyl)‐[1,1′‐biphenyl]‐4, 4′‐diamine (TPD) as the hole‐ transporting layer, and the emitting layer of tris‐(8‐hydroxyquinoline) aluminum (Alq). For the organic EL devices, bright green emission with 2600 cd/m2 is observed at a voltage of 15 V. The luminous efficiency is about 0.3 lm/W at a current density of 100 mA/cm2. This high efficiency indicates that the diamine doped MgF2 layer plays the role of hole transport and confinement of electrons in the emitting layer. It is also found that the thermal stability of the organic EL device is higher than that of the conventional organic EL device. © 1995 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

Development of an optical emission spectroscopy‐based method for dynamic compositional analysis of sputter deposited films from multicomponent targets

K. D. Leedy and J. M. Rigsbee

Appl. Phys. Lett. 66, 676 (1995); http://dx.doi.org/10.1063/1.114096 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
A method of calculating as‐deposited elemental film composition during the actual deposition process was developed using optical emission spectroscopy of the glow discharge. These results are demonstrated by analyses of a series of thin film Ag1−xSix alloys fabricated using radio frequency sputter deposition with composite Ag+Si sputter targets. Using intensity ratios of the Si (251.6 nm), Ag (328.1 nm), and Ar (419.8 nm) emission lines after equilibration of the substrate temperature, estimates of at. % Si in the films were calculated which agreed well with post‐deposition composition measurements of the films by Auger electron spectroscopy. © 1995 American Institute of Physics.
Show PACS
81.15.Cd Deposition by sputtering
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Hot wall epitaxy of C60 thin films on mica

D. Stifter and H. Sitter

Appl. Phys. Lett. 66, 679 (1995); http://dx.doi.org/10.1063/1.114097 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
Using high resolution x‐ray diffraction, it is shown that hot wall epitaxy is an appropriate growth technique in order to obtain perfect monocrystalline C60 thin films with a thickness up to 150 nm. The full width at half‐maximum of rocking curves of the C60 (111) reflex measured on such films is about 210 arcsec. Rocking curves of thicker films exhibit a complex shape, which is interpreted as a result of a change in the growth mode of C60 films exceeding a critical thickness. © 1995 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
61.46.-w Structure of nanoscale materials

Elastic constants and Poisson ratio in the system AlAs–GaAs

M. Krieger, H. Sigg, N. Herres, K. Bachem, and K. Köhler

Appl. Phys. Lett. 66, 682 (1995); http://dx.doi.org/10.1063/1.114098 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
Near infrared Brillouin scattering was used to determine all three elastic constants, and hence Poisson’s ratio ν=C12/(C11+C12) of epitaxial AlxGa1−xAs layers on GaAs. The AlxGa1−xAs layers were grown by metalorganic chemical vapor deposition and molecular beam epitaxy. We found evidence for a slight bowing in all elastic constants versus Al composition x. The elastic constants of AlAs were determined to be C11=119.9 GPa±1.2 GPa, C12=57.5 GPa±1.3 GPa, and C44=56.6 GPa±0.7 GPa. From x‐ray measurements and the Poisson ratio ν=0.324±0.004 the relaxed (cubic) AlAs lattice constant is found to be aAlAs=5.661 72 ű0.000 08 Å. © 1995 American Institute of Physics.
Show PACS
68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology
62.20.-x Mechanical properties of solids

New generation of oxide target for the deposition of ferroelectric thin films by sputtering

M. Descamps, D. Remiens, L. Chabal, B. Jaber, and B. Thierry

Appl. Phys. Lett. 66, 685 (1995); http://dx.doi.org/10.1063/1.114099 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
PbTiO3 thin films have been prepared on Si/SiO2 substrates by radio frequency planar magnetron sputtering technique. The target used in this experiment consists of multilayers of PbO and TiO2 obtained by tape casting and cold pressing. The composition of the film is easily controlled by the thicknesses of the PbO and TiO2 layers and also by the surface erosion. Target design and preparation, growth parameters and annealing conditions have been optimized to obtain stoichiometric films in the tetragonal crystal structure without second phase. © 1995 American Institute of Physics.  
Show PACS
81.15.Cd Deposition by sputtering
77.55.-g Dielectric thin films

Enhancement of phosphorus incorporation and growth rate of epitaxial diamond films by the addition of nitrogen

G. Z. Cao, W. J. P. van Enckevort, L. J. Giling, and R. C. M. de Kruif

Appl. Phys. Lett. 66, 688 (1995); http://dx.doi.org/10.1063/1.114100 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
The influence of the addition of nitrogen on the phosphorus incorporation into and the growth rate of epitaxial diamond films grown by hot filament chemical vapor deposition, using a solid compound (NH4H2PO4) as a doping source, was investigated. Experiments show that the introduction of nitrogen gas into the system increases both the segregation of phosphorus in the epitaxial diamond and the film growth rate. The enhancement of phosphorus incorporation was attributed to the local lattice dilatation caused by a significant level of nitrogen dopant, while the increase of growth rate was explained by a model for defect‐induced stabilization of diamond. From the secondary ion mass spectrometry analysis, it was found that the effective incorporation efficiency of nitrogen in diamond is about 9×10−4. For phosphorus it can reach a value as high as approximately 1×10−3 when a large amount of nitrogen is introduced simultaneously to the system. © 1995 American Institute of Physics.
Show PACS
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Internal friction and its thermal evolution measured on very thin platinum films

V. Pelosin, K. F. Badawi, and V. Branger

Appl. Phys. Lett. 66, 691 (1995); http://dx.doi.org/10.1063/1.114101 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Internal friction has been measured between 300 and 800 K on thin platinum films using a vibrating reed device. The 575 and 1500 Å thick samples were deposited with ion assistance on silicon substrate. It has been shown that the damping level is considerably reduced by annealing between 650 and 800 K. Thanks to isothermal experiments, we have determined the activation enthalpy of the process involved in the present structural evolution. The calculated energies and complementary transmission electron microscopy micrographs let us assume that the observed mechanism is closely related to microstructural rearrangements located at grain boundaries. © 1995 American Institute of Physics.
Show PACS
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.35.Gy Mechanical properties; surface strains
68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology

Scanning thermal imaging microscopy using composite cantilever probes

O. Nakabeppu, M. Chandrachood, Y. Wu, J. Lai, and A. Majumdar

Appl. Phys. Lett. 66, 694 (1995); http://dx.doi.org/10.1063/1.114102 (3 pages) | Cited 45 times

Full Text: | Download PDF

Show Abstract
We have developed a simple technique of measuring surface temperature contrast with submicron spatial resolution. The technique uses the atomic force microscope (AFM) to scan a composite cantilever probe made of a thin metal film (aluminum or gold) deposited on a regular silicon nitride AFM probe. During tip‐surface contact, heat flow through the tip changes the cantilever temperature which bends the cantilever due to differential thermal expansion of the two probe materials. An ac measurement is used to separate cantilever bending due to temperature and topography. To eliminate image distortion due to air heat conduction, thermal images of a biased resistor were obtained in vacuum (10−5 Torr). The images showed hot spots due to current crowding around voids in the heater and suggested a spatial resolution of 0.4 μm. © 1995 American Institute of Physics.
Show PACS
07.20.-n Thermal instruments and apparatus
07.79.Lh Atomic force microscopes
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Field dependent permittivity in metal‐semiconducting SrTiO3 Schottky diodes

R. A. van der Berg, P. W. M. Blom, J. F. M. Cillessen, and R. M. Wolf

Appl. Phys. Lett. 66, 697 (1995); http://dx.doi.org/10.1063/1.114103 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
The field dependence of the dielectric constant of SrTiO3 is investigated using the capacitance versus bias voltage characteristics of various metal‐SrTiO3:Nb Schottky diodes. The relative dielectric constant is shown to decrease one order of magnitude for electric fields ranging from 0.1 to 10 MV/cm. At low fields the permittivity follows the Curie–Weiss law, whereas at fields larger than 500 kV/cm the permittivity is nearly temperature independent. At high doping densities the field dependent permittivity gives rise to a reduction of the depletion width of the Schottky diode. © 1995 American Institute of Physics.
Show PACS
77.22.Ch Permittivity (dielectric function)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
73.30.+y Surface double layers, Schottky barriers, and work functions

In situ real time measurement of the incubation time for silicon nucleation on silicon dioxide in a rapid thermal process

Y. Z. Hu, D. J. Diehl, Q. Liu, C. Y. Zhao, and E. A. Irene

Appl. Phys. Lett. 66, 700 (1995); http://dx.doi.org/10.1063/1.114104 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
Real time ellipsometry and atomic force microscopy (AFM) were used to measure critical nucleation parameters for polycrystalline silicon deposition on an amorphous SiO2 layer by rapid thermal chemical vapor deposition (RTCVD) using disilane (5% in helium). A particularly important parameter for selective epitaxial deposition is the time for nuclei to form, the incubation time. Quantitation of the nucleation parameters, such as the nuclei density, nuclei growth rate, nuclei coalescence, and an operational incubation time were determined from the real time ellipsometric measurements and confirmed by AFM. For a substrate temperature of 700 °C and at a chamber pressure of 0.2 Torr, the nuclei densities of 1.4×1010 nuclei/cm2, incubation time of 26 s and nuclei layer growth rates of 20 nm/min were obtained. © 1995 American Institute of Physics.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Fabrication of 0.1 μm metal oxide semiconductor field‐effect transistors with the atomic force microscope

S. C. Minne, H. T. Soh, Ph. Flueckiger, and C. F. Quate

Appl. Phys. Lett. 66, 703 (1995); http://dx.doi.org/10.1063/1.114105 (3 pages) | Cited 103 times

Full Text: | Download PDF

Show Abstract
Using the atomic force microscope (AFM), we have fabricated a metal oxide semiconductor field‐effect transistor (MOSFET) on silicon with an effective channel length of 0.1 μm. The lithography at the gate level was performed with the scanning tip of the AFM. The gate was defined by electric‐field‐enhanced selective oxidation of the amorphous silicon gate electrode. The electrical characteristics were reasonable with a transconductance of 279 mS/mm and a threshold voltage of 0.55 V. © 1995 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Use of high direct current bias to separate electrode from bulk impedance

Y. Cohen, A. Davidovich, and I. Riess

Appl. Phys. Lett. 66, 706 (1995); http://dx.doi.org/10.1063/1.114106 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
It is shown that the electrode impedance can be separated from the bulk impedance in semiconductors and electrochemical cells using high dc biases. This is true both for two‐point dc resistance measurements and for two‐point ac impedance measurements. Experimental evidence on semiconductor thin films is presented. The dc biases required may be high, in the 50 V range, and can then be applied mainly to high resistance samples, in particular to thin films. © 1995 American Institute of Physics.
Show PACS
73.40.Cg Contact resistance, contact potential
73.50.Fq High-field and nonlinear effects
73.30.+y Surface double layers, Schottky barriers, and work functions
07.50.-e Electrical and electronic instruments and components

Low temperature device creation in Si via fast Li electromigration

Leonid Chernyak, Vera Lyakhovitskaya, and David Cahen

Appl. Phys. Lett. 66, 709 (1995); http://dx.doi.org/10.1063/1.114107 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Micrometer‐sized homojunction structures can be formed by local application of strong electric fields (∼106 V/cm) at ambient temperatures to Si which was homogeneously doped n‐type by Li. Such junctions show electroluminesence and two such junctions, arranged back to back, act as transistors, as evidenced by electron beam induced current, current‐voltage and capacitance‐voltage measurements. These results are explained by thermally‐assisted electromigration of Li. © 1995 American Institute of Physics.
Show PACS
66.30.Qa Electromigration
61.72.uf Ge and Si
78.60.Fi Electroluminescence

Activation of ion implanted dopants in α‐SiC

S. Ahmed, C. J. Barbero, and T. W. Sigmon

Appl. Phys. Lett. 66, 712 (1995); http://dx.doi.org/10.1063/1.114108 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
In this letter, activation of implanted dopants in 6Hα‐SiC using a pulsed excimer laser is reported. Commercially available substrates are implanted with nitrogen or aluminum. A 308 nm pulsed excimer laser is then used to anneal the samples which are held at room temperature. Point contact current‐voltage (PCIV) measurements are used to extract the carrier concentration of the annealed layers. Initial results suggest complete activation of the implanted dopants. Pulsed laser annealing of ion implanted SiC appears to be an attractive option as compared to furnace annealing at high temperatures. © 1995 American Institute of Physics.
Show PACS
61.72.uf Ge and Si
66.30.J- Diffusion of impurities
61.72.Cc Kinetics of defect formation and annealing

Growth of InN films on GaAs (111) and GaP(111) substrates by microwave‐excited metalorganic vapor phase epitaxy

Qixin Guo, Hiroshi Ogawa, Hirofumi Yamano, and Akira Yoshida

Appl. Phys. Lett. 66, 715 (1995); http://dx.doi.org/10.1063/1.114109 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
InN films have been grown on GaAs(111) and GaP(111) substrates using microwave‐excited metalorganic vapor phase epitaxy. Trimethylindium and nitrogen were used as the source materials. It is revealed that epitaxial InN films can be obtained on GaAs (111) and GaP(111) by exposing the substrate to nitrogen plasma before the growth and that the crystalline quality of the InN films is strongly dependent on exposing time. All films have a wurtzite structure and display the InN(0001)// GaAs(111), InN(0001)//GaP(111) orientation. © 1995 American Institute of Physics.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Cation interdiffusion in InGaAsP/InGaAsP multiple quantum wells with constant P/As ratio

A. Hamoudi, A. Ougazzaden, Ph. Krauz, E. V. K. Rao, M. Juhel, and H. Thibierge

Appl. Phys. Lett. 66, 718 (1995); http://dx.doi.org/10.1063/1.114110 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
On quaternary/quaternary multiple quantum wells, with constant P/As ratio and In‐rich wells, we show the possibility of producing a blueshift of the heavy hole exciton line with interdiffusing only group III atoms, similarly to GaAs/GaAlAs and InGaAs/GaAs systems. This kind of structure, particularly suitable for group III diffusion study, has allowed us to obtain a quantitative value of the In–Ga interdiffusion coefficient at 850 °C: DIn–Ga≊4.72×10−16 cm2 s−1. © 1995 American Institute of Physics.
Show PACS
68.35.Fx Diffusion; interface formation
68.60.Dv Thermal stability; thermal effects
66.30.Ny Chemical interdiffusion; diffusion barriers
78.66.Fd III-V semiconductors

Effects of deposition conditions on transport properties of intrinsic hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide films investigated by the photomixing technique

Yi Tang and R. Braunstein

Appl. Phys. Lett. 66, 721 (1995); http://dx.doi.org/10.1063/1.114111 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
By using the photomixing technique, we have determined the electron drift mobility, lifetime, and the conduction band Urbach energy of hydrogenated amorphous silicon (a‐Si:H) and hydrogenated amorphous silicon carbide (a‐SiC:H) films as a function of deposition temperature (Ts, 200 °C≤Ts≤280 °C) and hydrogen dilution ratio (R,0≤R≤25), respectively. We have found that for the a‐Si:H films with increasing deposition temperature, the lifetime (at 480 K) increases, both the drift mobility (at 480 K) and the Urbach energy decrease and for the a‐SiC:H films with increasing hydrogen dilution ratio, both the drift mobility (at 480 K) and the lifetime (at 480 K) increase, and the Urbach energy shows a tendency to decrease. These results, together with previous results of other workers, indicate that for the a‐Si:H films with increasing deposition temperature, the density of negatively charged defects increases and the density of positively charged and neutral defects decreases; and for the a‐SiC:H films with increasing hydrogen dilution ratio, the density of positively charged, negatively charged, and neutral defects all show a tendency to decrease. © 1995 American Institute of Physics.
Show PACS
73.61.Jc Amorphous semiconductors; glasses
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Pz Photoconduction and photovoltaic effects

Influence of misfit dislocations on the surface morphology of Si1−xGex films

M. A. Lutz, R. M. Feenstra, F. K. LeGoues, P. M. Mooney, and J. O. Chu

Appl. Phys. Lett. 66, 724 (1995); http://dx.doi.org/10.1063/1.114112 (3 pages) | Cited 92 times

Full Text: | Download PDF

Show Abstract
The influence of misfit dislocations on the surface morphology of partially strain relaxed Si1−xGex films is studied by atomic force microscopy and transmission electron microscopy. Surface steps arising from the formation of single and multiple 60° dislocations are identified. The role of such steps in the development of a cross‐hatch pattern in surface morphology is discussed. © 1995 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close