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13 Feb 1995

Volume 66, Issue 7, pp. 783-899

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Lasing operation up to 200 K in the wavelength range of 570–590 nm by GaInP/AlGaInP double‐heterostructure laser diodes on GaAsP substrates

T. Tanaka, K. Uchida, Y. Ishitani, and S. Minagawa

Appl. Phys. Lett. 66, 783 (1995); http://dx.doi.org/10.1063/1.114187 (3 pages) | Cited 5 times

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Short‐wavelength stimulated emission from a GaInP/AlGaInP double‐heterostructure (DH) grown on GaAs0.6P0.4 substrates, where lattice‐matched Ga0.7In0.3P is the active layer with Γ band‐gap energy beyond 2.1 eV is investigated. Laser oscillation is attained at a wavelength below 590 nm. This shows that the DH attains sufficient carrier confinement for lasing even though the minimum Γ band‐gap energy is close to that in the X band. By applying high‐reflectivity coating on both facets of the cavity to decrease the optical mirror loss, we achieve lasing operation by the DH devices under pulsed current injection up to 200 K. The device exhibits threshold currents of 115 mA at 77 K and 380 mA at 200 K, and an output power level up to 0.3 mW. The oscillation wavelength is 577 nm at 77 K and 588 nm at 200 K when the current is injected at 1.2 times the threshold. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
78.45.+h Stimulated emission

Nonlinear absorption in polydiacetylene waveguides

William A. Pender, Adrian J. Boyle, Paul Lambkin, Werner J. Blau, Kourosh Mazaheri, Duncan J. Westland, Vladimir Skarda, and Massimo Sparpaglione

Appl. Phys. Lett. 66, 786 (1995); http://dx.doi.org/10.1063/1.114188 (3 pages) | Cited 10 times

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We have observed nonlinear absorption in spin‐coated poly(4,6‐decadiyne‐1, 10‐diolbis {[(n‐butoxycarbonyl)methyl]urethane}) [poly(3BCMU)] polydiacetylene channel waveguides at different wavelengths in the near‐infrared. Intensity dependent absorption coefficients, α2 and α3, have been determined by measurements of the intensity dependent transmission. The implications of nonlinear absorption for all‐optical device applications in this material are discussed. © 1995 American Institute of Physics.
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42.70.Jk Polymers and organics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Jw Organic compounds, polymers

Resonance due to the interaction of tunneling particles with modulation quanta

Mark J. Hagmann

Appl. Phys. Lett. 66, 789 (1995); http://dx.doi.org/10.1063/1.114189 (3 pages) | Cited 19 times

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Numerical simulations of quantum tunneling with time‐dependent barriers show that there is a resonance, with a marked increase in the transmission coefficient. For a raised cosine potential, and for low energies with square barriers, the resonance occurs when a modulation quantum can take a tunneling particle to the top of the barrier. For energies near the top of a square barrier the resonance may be understood by hypothesizing that a tunneling particle may travel from end to end of the barrier until it is ultimately either transmitted or reflected. © 1995 American Institute of Physics.
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73.40.Gk Tunneling
72.10.Bg General formulation of transport theory

Nonlinear grating interaction in photorefractive Bi12SiO20

Preben Buchhave, Peter E. Andersen, Paul Michael Petersen, and Mikhail Vasnetsov

Appl. Phys. Lett. 66, 792 (1995); http://dx.doi.org/10.1063/1.114190 (3 pages) | Cited 3 times

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Recently significant crosstalk has been observed in a multibeam experiment in which gratings were previously thought to be independent. In this letter, it is shown that the crosstalk is due to a coherent nonlinear combination of the primary gratings, which causes additional peaks to occur in the diffraction pattern and changes the diffraction efficiency of the primary gratings explaining the apparent crosstalk. It is shown that the effect can be derived from the band transport model when all the terms in the expression for the generation of charge carriers are retained. Results are presented for a configuration consisting of a reference beam and two object beams and show experimental results that confirm the model. © 1995 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Universal curves for optical‐matrix elements of strained quantum wells

Chih‐Sheng Chang and S. L. Chuang

Appl. Phys. Lett. 66, 795 (1995); http://dx.doi.org/10.1063/1.114191 (3 pages) | Cited 5 times

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Strain and quantum size effects on the optical matrix elements for both TE and TM polarizations of strained quantum wells are studied theoretically including the spin‐orbit coupling. A set of universal curves for the polarization dependent optical matrix elements as a function of strain is shown. These curves will be very helpful for a quick estimate of the optical matrix elements including the effects of the spin–orbit splitoff band for modeling the optical gain and absorption using strained quantum wells. © 1995 American Institute of Physics.
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78.66.Fd III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes
42.79.Hp Optical processors, correlators, and modulators
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

On the wavefront distortion in holograms recorded in thermoplastic films

F. Carreño and E. Bernabeu

Appl. Phys. Lett. 66, 798 (1995); http://dx.doi.org/10.1063/1.114192 (3 pages) | Cited 2 times

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This letter analyzes the quality of reproduction of holograms recorded in thermoplastic media as a function of the variations in coating thickness of the different layers. The fidelity of reproduction is investigated by means of a phase sampling interferometric technique. It is found that the distortion depends on the processing parameters. A criterion for the optimization of the coating thickness of the layers is given. © 1995 American Institute of Physics.
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42.40.-i Holography
42.70.Jk Polymers and organics

Continuous wave near‐infrared atomic Xe laser excited by a radio frequency discharge in a slab geometry

S. N. Tskhai, Yu. B. Udalov, P. J. M. Peters, W. J. Witteman, and V. N. Ochkin

Appl. Phys. Lett. 66, 801 (1995); http://dx.doi.org/10.1063/1.113425 (3 pages) | Cited 6 times

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Near‐infrared atomic Xe laser lines have been generated from an Ar:He:Xe laser gas mixture excited by a radio frequency (rf) discharge in a slab geometry. A maximum continuous wave (cw) output power of 1.5 W (270 W/l) was obtained at an rf frequency of 125 MHz from a gas mixture containing Ar:He:Xe (50:49:1) at a total gas pressure of 90 Torr. © 1995 American Institute of Physics.  
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.-v Laser optical systems: design and operation

Nonlinear absorption and refraction of quantum confined InP nanocrystals grown in porous glass

M. D. Dvorak, B. L. Justus, D. K. Gaskill, and D. G. Hendershot

Appl. Phys. Lett. 66, 804 (1995); http://dx.doi.org/10.1063/1.113426 (3 pages) | Cited 19 times

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Single‐beam Z‐scan experiments have been used to measure the two‐photon absorption coefficient β and bound electronic nonlinear refractive index γ of composites of InP nanocrystals grown in 40 and 150 Å Vycor porous glass. These materials were also studied with two‐beam time‐resolved Z scans to confirm that the nonlinearities are instantaneous with respect to the ∼100 ps pulses used. The magnitudes of the nonlinearities in the 150 Å sample are found to be similar to those of bulk InP when scaled by the volume fraction of deposited material. For the 40 Å sample the ratio γ/β is enhanced by a factor of fourteen compared to bulk InP. © 1995 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Observation of the dynamics of electron plasma oscillations in femtosecond laser‐produced plasmas

D. von der Linde and H. Schüler

Appl. Phys. Lett. 66, 807 (1995); http://dx.doi.org/10.1063/1.113427 (2 pages) | Cited 3 times

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A microplasma is produced on the surface of a glass sample by a 120 fs laser excitation pulse. The optical second harmonic from the plasma is measured using a weak delayed probe pulse. It is shown that the rise and decay of electron plasma oscillations can be mapped out by measuring properly selected second harmonic components as a function of delay time. © 1995 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
79.20.Ds Laser-beam impact phenomena
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Thermally stable amorphous BaxTi2−xOy thin films

W.‐T. Liu, S. T. Lakshmikumar, D. B. Knorr, E. J. Rymaszewski, T.‐M. Lu, and H. Bakhru

Appl. Phys. Lett. 66, 809 (1995); http://dx.doi.org/10.1063/1.113428 (3 pages) | Cited 8 times

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The reactive partially ionized beam deposition technique was used to deposit amorphous BaxTi2−xOy thin films with the Ba/Ti ratios from 1 for a stoichiometric BaTiO3 film to 0.2 for a Ti enriched film. A postdeposition annealing between 500 and 600 °C converted stoichiometric amorphous BaTiO3 into polycrystalline structure. This crystallization resulted in densification with a 9% decrease in film thickness. Off‐stoichiometric thin films remained amorphous up to 700 °C. Annealed off‐stoichiometric BaxTi2−xOy films, however, had lower leakage current and loss tangent than polycrystalline films due to their amorphous nature making them more suitable for electronic applications. At temperatures of 800 °C or higher, significant reaction occurred between the films and Si substrate as detected by Rutherford backscattered spectroscopy. © 1995 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Growth of SnO2 films on micromachined hotplates

R. E. Cavicchi, J. S. Suehle, K. G. Kreider, B. L. Shomaker, J. A. Small, M. Gaitan, and P. Chaparala

Appl. Phys. Lett. 66, 812 (1995); http://dx.doi.org/10.1063/1.113429 (3 pages) | Cited 23 times

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Arrays of micromachined hotplates have been used for materials processing on a microscopic scale. The temperature of individual elements ‘‘micro‐hotplates’’ of an array is controlled by addressing a given element with a specified current and measuring the temperature from a resistance change. This unique temperature control capability has been exploited to deposit SnO2 overlayers onto micro‐hotplates with individually controlled temperatures using reactive sputter deposition and organometallic chemical vapor deposition. Post‐deposition heating in vacuum was used to alter the stoichiometry of films. The result is an array of separately, but simultaneously, processed films. The micro‐hotplates have excellent thermal isolation from other devices (transistors, logic elements) on the chip. Electrical contact pads allow for in situ electrical characterization of the films. The use of micro‐hotplates allows high‐temperature growth to occur on portions of a silicon substrate, while other portions remain at room temperature. This is especially important for materials such as SnO2, used as the sensing layer in thin film gas sensors. With large arrays of micro‐hotplates, efficient growth and processing surveys are possible. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Hp Lithography, masks and pattern transfer
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Metalorganic chemical vapor deposition of TiO2:N anatase thin film on Si substrate

Dong Heon Lee, Yong Soo Cho, Woul In Yi, Tae Song Kim, Jeon Kook Lee, and Hyung Jin Jung

Appl. Phys. Lett. 66, 815 (1995); http://dx.doi.org/10.1063/1.113430 (2 pages) | Cited 20 times

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Titanium dioxide thin film doped with nitrogen was deposited at 420 °C on p‐type silicon substrate by metalorganic chemical vapor deposition using titanium tetra‐isopropoxide and nitrous oxide. From an x‐ray diffraction result, when deposited at 420 °C, only the anatase (101) peak and (200) peak were observed. Raman spectroscopy confirmed the presence of anatase phase without any rutile or TiN phase. X‐ray photoelectron spectrum revealed that nitrogen was doped into the lattice of TiO2 anatase. In the bulk of the film nitrogen peak was observed, and the spectrum of Ti 2p core level confirmed titanium–nitrogen bonding due to nitrogen incorporation into the anatase lattice. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology

Excimer laser assisted chemical machining of SiC ceramic

Yuko Hibi, Yuji Enomoto, Kaoru Kikuchi, Nobuo Shikata, and Hisato Ogiso

Appl. Phys. Lett. 66, 817 (1995); http://dx.doi.org/10.1063/1.113431 (2 pages) | Cited 7 times

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A highly effective method of machining ceramic has been newly developed using a krypton fluoride (KrF) excimer laser with a 248 nm wavelength. The laser was irradiated on SiC in water to form a soft hydrous oxide layer by photochemical reaction. The softened layer was then cut with a diamond tool to form a mirror surface finish. The optimum conditions were found for both high machining rate and better surface integrity of SiC. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

Composition profiles in electrodeposited ceramic superlattices

Jay A. Switzer, Richard J. Phillips, and Teresa D. Golden

Appl. Phys. Lett. 66, 819 (1995); http://dx.doi.org/10.1063/1.113432 (3 pages) | Cited 5 times

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Superlattices in the Pb–Tl–O system with layer thicknesses in the 4–6 nm range were electrodeposited from a single aqueous solution by pulsing the applied potential during deposition. The current‐time transients that resulted from the potential steps were monitored to both calculate and tailor the composition profiles of the superlattices during growth. The Cottrell method was used to determine that Tl(l) oxidation was diffusion limited at high potentials. The diffusion limitation resulted in a composition profile that was graded throughout the layer with a t−1/2 dependence. Superlattices grown at lower potentials in which both reactants were under kinetic control had square composition profiles. © 1995 American Institute of Physics.
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81.15.Pq Electrodeposition, electroplating

Solid phase epitaxial growth of sol‐gel derived Pb(Zr,Ti)O3 thin films on SrTiO3 and MgO

K. Nashimoto, D. K. Fork, and G. B. Anderson

Appl. Phys. Lett. 66, 822 (1995); http://dx.doi.org/10.1063/1.113433 (3 pages) | Cited 29 times

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Pb(Zr0.52Ti0.48)O3 (PZT) thin films were crystallized on SrTiO3 (100) and MgO (100) substrates by a sol‐gel process using nonhydrolyzed metal methoxyethoxide precursors, spin coating, and rapid thermal annealing. Solid phase epitaxial growth of PZT on SrTiO3 was observed directly from the amorphous phase even at 425 °C. The PZT had a single (001) orientation and rocking curve full width at half maximum (FWHM) less than 0.1°. High‐temperature annealing of MgO substrates improved orientation of PZT thin films. Epitaxial crystallization of PZT with a single (001) orientation on the annealed MgO was observed at temperature above 550 °C after the formation of the pyrochlore phase. © 1995 American Institute of Physics.
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81.15.Np Solid phase epitaxy; growth from solid phases
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Detection of simultaneous lattice expansion and contraction in low‐energy, H‐implanted InP

M. Fatemi, B. Molnar, H. B. Dietrich, and W. T. Anderson

Appl. Phys. Lett. 66, 825 (1995); http://dx.doi.org/10.1063/1.113434 (2 pages) | Cited 2 times

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We report the observation of simultaneous lattice expansion and contraction in InP implanted with low‐energy protons, using the high‐resolution x‐ray rocking‐curve technique. For implantation with 260 keV, 1×1016 protons/cm2, the volume of the crystal extending from the surface to approximately 1.6 μm deep is contracted with a mean effective strain of −7×10−5, while the proton containing region is expanded to a maximum positive strain of about 7×10−4. © 1995 American Institute of Physics.
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61.80.Jh Ion radiation effects
61.66.Fn Inorganic compounds

Direct heterobonding of lithium niobate onto lithium tantalate

Kazuo Eda, Masato Sugimoto, and Yoshihiro Tomita

Appl. Phys. Lett. 66, 827 (1995); http://dx.doi.org/10.1063/1.113435 (3 pages) | Cited 8 times

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A new method to bond directly different electro‐optic materials (lithium niobate on lithium tantalate) for fabricating an optical waveguide is reported. Its fabrication process, interface microstructure, and usefulness for optical devices are also related. © 1995 American Institute of Physics.  
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42.79.Gn Optical waveguides and couplers
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Growth and characterization of (Y3Fe5O12–Bi3Fe5O12) heterostructures by pulsed laser deposition

B. M. Simion, G. Thomas, R. Ramesh, V. G. Keramidas, and R. L. Pfeffer

Appl. Phys. Lett. 66, 830 (1995); http://dx.doi.org/10.1063/1.113436 (3 pages) | Cited 9 times

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Superlattice heterostructures consisting of alternating single crystalline ferrimagnetic yttrium–iron–garnet (YIG) and bismuth–iron–garnet (BIG) thin film layers on gadolinium–gallium–garnet substrates show an increased saturation magnetization with respect to that of the monolayered structures grown under the same conditions. The observed effect is attributed to the distortions introduced in the YIG layers by the adjacent BIG layers. In this letter, we report our growth approach, by pulsed laser deposition, of these unusually performing thin film heterostructures. © 1995 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

One‐dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructures

M. Holzmann, D. Többen, G. Abstreiter, M. Wendel, H. Lorenz, J. P. Kotthaus, and F. Schäffler

Appl. Phys. Lett. 66, 833 (1995); http://dx.doi.org/10.1063/1.113437 (3 pages) | Cited 10 times

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Magnetotransport of high‐mobility electrons in quasi‐one‐dimensional quantum wires in Si/Si0.7Ge0.3 heterostructures is studied. Arrays of shallow and deep etched wires with a period of 480 nm are defined by laser holography and patterned by reactive ion etching. Typical features of transport in narrow electron channels, such as oscillations due to the depopulation of quasi‐one‐dimensional subbands and an anomalous resistance maximum at low magnetic fields are observed. The narrowest channels have an effective width of ≊70 nm and a sublevel spacing of 1 meV. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Dn Low-field transport and mobility; piezoresistance
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Room‐temperature backbond oxidation of the porous silicon surface by oxygen radical irradiation

Patrick O’Keeffe, Yoshinobu Aoyagi, Shuji Komuro, Takashi Kato, and Takitaro Morikawa

Appl. Phys. Lett. 66, 836 (1995); http://dx.doi.org/10.1063/1.113438 (3 pages) | Cited 31 times

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Backbond oxidation of the porous silicon (PS) surface as a result of irradiation by oxygen radicals (O∗) from an electron cyclotron resonance plasma has been successfully achieved at room temperature. Increasing the O∗ irradiation time enhances both the photoluminescence (PL) intensity, and the oxygen related absorption in the 2000–2300 cm−1 wave number range obtained from Fourier‐transform infrared spectroscopy (FTIR). Analysis of the FTIR spectra correlates oxidation of the outermost backbonded Si in the form H2Si–O2, HSi–O3 bonding structures with increasing PL intensity. Furthermore, these results show that oxidation of the backbonded Si network on the PS surface is the main mechanism responsible for the enhancement of the PL intensity and suppression of the PL fatigue. This enhancement and stabilization of the PL properties of PS at such low temperatures is explained in terms of the high sticking coefficient of O∗ and soft O∗ irradiation induced oxidation. © 1995 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
81.65.-b Surface treatments
73.20.-r Electron states at surfaces and interfaces

All‐optical picosecond switching of a quantum well etalon using spin‐polarization relaxation

Yuji Nishikawa, Atsushi Tackeuchi, Satoshi Nakamura, Shunichi Muto, and Naoki Yokoyama

Appl. Phys. Lett. 66, 839 (1995); http://dx.doi.org/10.1063/1.113439 (3 pages) | Cited 50 times

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All‐optical picosecond gate operation is demonstrated using the spin relaxation in a quantum well etalon. Electron spin‐polarization photoexcited by circularly polarized light in GaAs quantum wells decays in picoseconds. With the use of the spin relaxation in a quantum well etalon, all‐optical full switching is achieved with a decay time of as fast as 7 ps, by adopting a simple optical differential method, which uses only a quarter‐wave plate and a polarizer in addition to the conventional all‐optical switching setup. © 1995 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Gated Hall effect measurements in high‐mobility n‐type Si/SiGe modulation‐doped heterostructures

K. Ismail, M. Arafa, Frank Stern, J. O. Chu, and B. S. Meyerson

Appl. Phys. Lett. 66, 842 (1995); http://dx.doi.org/10.1063/1.113440 (3 pages) | Cited 27 times

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We report gated Hall effect measurements and the study of electron mobility versus density in high‐mobility modulation‐doped Si/SiGe heterostructures. Front and back gates have been used to control the electron density and the shape of the electron wave function in the strained Si channel. The gate control on the electron density is modeled using a self‐consistent Schrödinger and Poisson equation solution. We find that the electron mobility μ increases with electron density n as μ∝nα, where α is 1.2–1.8 at low n, and 0.7–1.0 at high n. A peak mobility of 5.2×105 cm2/V s at 0.4 K, considerably higher than the value in comparable ungated structures, is achieved when the electron wave function is moved away from the top heterointerface towards the center of the Si channel. © 1995 American Institute of Physics.
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73.50.Dn Low-field transport and mobility; piezoresistance
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Tellurium‐doped Al0.43Ga0.57As/(In0.2)GaAs modulation doped heterostructures by molecular‐beam‐epitaxy

W.‐N. Jiang, N. X. Nguyen, R. D. Underwood, U. K. Mishra, and R. G. Wilson

Appl. Phys. Lett. 66, 845 (1995); http://dx.doi.org/10.1063/1.113441 (3 pages)

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Te has previously been demonstrated to have a shallower deep donor (DX‐center) level than Si in AlGaAs. In this work, Te‐doped Al0.43Ga0.57As/GaAs and pseudomorphic Al0.43Ga0.57As/ In0.2Ga0.8As modulation‐doped heterostructures (MDHs) grown by MBE have been studied. The conduction band offset ΔEc in the pseudomorphic AlGaAs/InGaAs material system has a maximum at 43% Al mole fraction. This allows maximum carrier confinement in the quantum well. Two‐dimensional electron densities and mobilities 2.36×1012 cm−2 and 7794 cm2/V s at 300 K and 2.17×1012 cm−2 and 24 379 cm2/V s at 77 K (in the dark) have been obtained in Te‐doped pseudomorphic MDHs. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Independently contacted double quantum well structure fabricated by molecular beam epitaxial regrowth

N. K. Patel, M. P. Grimshaw, J. H. Burroughes, M. L. Leadbeater, D. A. Ritchie, and G. A. C. Jones

Appl. Phys. Lett. 66, 848 (1995); http://dx.doi.org/10.1063/1.113407 (3 pages) | Cited 6 times

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Molecular beam epitaxial regrowth over a patterned substrate has been used to produce independent contacts to the two‐dimensional electron gases in a double quantum well structure. Optimization of the growth conditions and incorporation of a buffer layer at the regrowth interface are critical to the success of these devices. This simple method provides a means of realizing full wafer production and increases the capability of producing mesoscopic devices in multiconducting layer systems. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Room‐temperature visible luminescence from silicon nanocrystals in silicon implanted SiO2 layers

P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, and M. Guzzi

Appl. Phys. Lett. 66, 851 (1995); http://dx.doi.org/10.1063/1.113408 (3 pages) | Cited 157 times

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We report the observation of visible‐light emission at room temperature from high fluence (0.3–3×1017 cm−2) Si+ implanted thermal SiO2 layers grown on silicon substrates. Significant blue‐light emission and an intense broad luminescent band with a peak beyond 750 nm are observed after annealing at high temperature (T≥1000 °C). The red‐light emission, present only in the highest fluence implant, is attributed to the luminescence emitted from silicon nanocrystals produced by silicon precipitation. The presence of silicon nanocrystals is confirmed by transmission electron microscopy. Significant blue‐light emission is visible after thermal annealing in the 1×1017 cm−2 fluence implant. The peak position shifts from 490 to 540 nm by increasing the annealing cycles temperature. © 1995 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
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