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20 Feb 1995

Volume 66, Issue 8, pp. 905-1020

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Formation and decay dynamics of excitonic photoluminescence in a GaAs/AlGaAs superlattice under an electric field

H. Schneider, K. Kanamoto, and K. Fujiwara

Appl. Phys. Lett. 66, 905 (1995); http://dx.doi.org/10.1063/1.113592 (3 pages) | Cited 5 times

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Photoluminescence (PL) dynamics of localized excitons in a strongly coupled 40 Å/40 Å GaAs/Al0.2Ga0.8/As superlattice under an electric field along the growth direction is reported. At zero field, a delayed PL formation due to the relaxation of dark excitons into radiative states is observed. With increasing field, both the PL decay time and the PL amplitude are strongly reduced. A rate equation analysis of the measured PL transients gives evidence that the field‐induced dissociation of nonradiative excitons is important. © 1995 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Complete polarization control of 8×8 vertical‐cavity surface‐emitting laser matrix arrays

T. Yoshikawa, H. Kosaka, K. Kurihara, M. Kajita, Y. Sugimoto, and K. Kasahara

Appl. Phys. Lett. 66, 908 (1995); http://dx.doi.org/10.1063/1.113593 (3 pages) | Cited 42 times

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Polarization of 8×8 vertical cavity surface emitting laser (VCSEL) arrays is completely controlled. These index‐guided VCSELs have a 6×5 μm rectangular poststructure consisting of DBR mirrors. All 64 VCSELs emit fundamental single‐mode and linearly polarized light with a polarization angle deviation of only 2.9°. Their light output characteristics are almost the same as those of conventional 6×6 μm polarization‐uncontrolled VCSELs. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Calculations on modulation transfer function of a read‐only optical disk system with super resolution

Yihong Wu and Yusoff bin Mohamed Noor

Appl. Phys. Lett. 66, 911 (1995); http://dx.doi.org/10.1063/1.113594 (3 pages) | Cited 2 times

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Simulations have been performed for signal reproduction from a read‐only super resolution optical disk using a beam splitting method, in which a collimated laser beam generated by a laser diode is split into two beams with orthogonal polarizations and then recombined using polarizing beamsplitters. The beam with a higher power is used to raise the temperature of the mask layer, while the one with a lower power is employed to reproduce the recorded data. Tilting one of the laser beams against the other results in two laser spots partially overlapped at the focal plane, and the distance between the center of the two spots can be controlled by a galvanomirror. This allows signal readout with maximum resolution independent of the disk rotation speed. © 1995 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks

Picosecond cross‐polarization beam coupling in semi‐insulating Ga‐doped CdTe at high fluences

Yasuo Tomita and Eiji Enami

Appl. Phys. Lett. 66, 914 (1995); http://dx.doi.org/10.1063/1.113595 (3 pages) | Cited 1 time

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We demonstrate the high‐contrast polarization‐rotation switching in semi‐insulating CdTe:Ga using a 30‐ps pump and probe pulses at a wavelength of 1.064 μm. It is found that the maximum switching contrast in the photorefractive cross‐polarization beam coupling configuration is about eight times higher for CdTe:Ga compared to undoped GaAs at fluences above 10 mJ/cm2. © 1995 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.47.-p Spectroscopy of solid state dynamics

Graded‐index diffractive elements by thermal ion exchange in glass

Risto‐Pekka Salmio, Jyrki Saarinen, Jari Turunen, and Ari Tervonen

Appl. Phys. Lett. 66, 917 (1995); http://dx.doi.org/10.1063/1.113596 (3 pages) | Cited 5 times

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High‐efficiency diffractive elements with a graded volume distribution of refractive index are proposed, designed, and fabricated using thermal ion exchange in glass. A deliberate use of isotropic diffusion of ions enables us to generate, even with a single binary mask, a structure that acts like a continuous surface‐relief profile. The advantages of the proposed method include the ease of cleaning and antireflection coating the flat surface, the absence of alignment problems in the fabrication process, and compatibility with stacked planar optics. A grating beam splitter with three equal‐efficiency central orders and 89.7% diffraction efficiency is demonstrated. © 1995 American Institute of Physics.
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42.79.-e Optical elements, devices, and systems
61.72.up Other materials
66.30.J- Diffusion of impurities

Kink power in weakly index guided semiconductor lasers

M. F. C. Schemmann, C. J. van der Poel, B. A. H. van Bakel, H. P. M. M. Ambrosius, A. Valster, J. A. M. van den Heijkant, and G. A. Acket

Appl. Phys. Lett. 66, 920 (1995); http://dx.doi.org/10.1063/1.113597 (3 pages) | Cited 27 times

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A periodic dependence of kink power on laser length is observed and explained. Weakly index guided high power stripe lasers in the AlGaAs, InGaAlP, and InGaAs–AlGaAs material systems are studied and oscillation periods of 100–350 μm are found. Relative kink power differences exceeding a factor of 4 are observed. Facet coatings lead to differences in the oscillation amplitude but not in the oscillation period. The observations indicate that phase‐locked fundamental and first‐order modes exist at certain preferred laser lengths. This general model fully explains the oscillatory behavior of the kink power and the correlated changes in lateral far field distributions at the front and rear mirrors. It is concluded that the optimum diffraction limited power output can be obtained by choosing the proper laser length. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Nonresonant third‐order nonlinear optical susceptibility of CdS clusters encapsulated in zeolite A and X

Noriaki Sugimoto, Akihiko Koiwai, Shi‐aki Hyodo, Tatsumi Hioki, and Shoji Noda

Appl. Phys. Lett. 66, 923 (1995); http://dx.doi.org/10.1063/1.113598 (3 pages) | Cited 5 times

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Nonresonant third‐order harmonic generation from CdS clusters encapsulated in zeolite A and X was observed at a fundamental wavelength of 1900 nm. To avoid scattering from the surfaces of the small zeolite crystals, the powder samples were dispersed in a liquid with nearly the same refractive index as that of the samples. The third‐order optical susceptibilities of CdS‐encapsulated zeolite A and X estimated from the intensity of their Maker fringe patterns were 4.1×10−12 and 1.1×10−11 esu, respectively. These values were slightly smaller than those reported for the 1.5 nm surface‐capped CdS cluster. The hyperpolarizabilities of CdS clusters encapsulated in zeolite A and X were estimated by assuming the Lorentz local field to be in the range of 380–480×10−36 and 270–390×10−36 esu, respectively. © 1995 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Multisite nature and efficient lasing at 1041 and 1302 nm in Nd3+ doped potassium yttrium fluoride

X. X. Zhang, P. Hong, M. Bass, and B. H. T. Chai

Appl. Phys. Lett. 66, 926 (1995); http://dx.doi.org/10.1063/1.113599 (3 pages) | Cited 2 times

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Lasing of Nd3+ ions in different crystallographic sites of KYF4 has been demonstrated to occur at different wavelengths. Low threshold, high efficiency lasing performance at 1041 and 1302 nm were achieved under selective pumping conditions. The stimulated emission cross section at 1041.2 nm was estimated to be 2.6×10−19 cm2 and the radiative lifetime was found to be 600 μs. © 1995 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
78.45.+h Stimulated emission
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
78.55.Hx Other solid inorganic materials

Light scattering spectral behavior of liquid crystal dispersions in silica glasses

J. M. Otón, J. M. S. Pena, A. Serrano, and D. Levy

Appl. Phys. Lett. 66, 929 (1995); http://dx.doi.org/10.1063/1.113600 (3 pages) | Cited 8 times

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Dispersions of nematic liquid crystal microdroplets in silica glasses have been obtained by sol‐gel processes, forming gel‐glass dispersed liquid crystals (GDLCs). GDLC microdroplet size may be adjusted precisely by controlling the sol‐gel reaction. This allows the preparation of scattering media with different spectral response, which can be further modified by reorienting the liquid crystal microdroplets with external electric fields. Opaque/transparent and dichroic GDLC thin films have been prepared. An extension of the general scattering theory is used for explaining their optical behavior. © 1995 American Institute of Physics.
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61.30.-v Liquid crystals
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.20.Jq Electro-optical effects
42.70.Df Liquid crystals

Third‐order nonlinear optical response in a multilayered phthalocyanine composite

Braja K. Mandal, Bipin Bihari, Arun K. Sinha, Manjunath Kamath, and Lin Chen

Appl. Phys. Lett. 66, 932 (1995); http://dx.doi.org/10.1063/1.113601 (3 pages) | Cited 19 times

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The third‐order nonlinear optical properties of multilayered films containing 23% by weight of an axially modified silicon phthalocyanine derivative have been measured by degenerate four‐wave mixing at 532 nm with 70 ps full width at half maximum pulses. The average χ(3)of the films measured at (1.33±0.15) ×10−11 esu using CS2 as a standard and the cubic hyperpolarizability 〈γ〉 was calculated at (1.97±0.22)×10−32esu. The degenerate four‐wave mixing signal profile indicates that the films have a response time better than 70 ps. © 1995 American Institute of Physics.
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42.70.Jk Polymers and organics
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.47.-p Spectroscopy of solid state dynamics
78.66.Qn Polymers; organic compounds

Observation by scanning tunneling microscopy of a hexagonal Au(111) surface reconstruction induced by oxygen

L. Huang, J. Chevrier, P. Zeppenfeld, and G. Cosma

Appl. Phys. Lett. 66, 935 (1995); http://dx.doi.org/10.1063/1.113602 (3 pages) | Cited 16 times

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In this letter the observation by scanning tunneling microscopy of a Au(111) surface reconstruction induced by prolonged annealing of gold films in oxygen (pO2=1 bar) at high temperature (T=800 °C) is reported. At the atomic scale, the surface is characterized by a (√3×√3)R30° surface structure. In addition, the surface exhibits a long‐range ordered hexagonal superstructure with a periodicity of 80 Å and a corrugation of about 0.5 Å. Convincing evidence is presented that this surface morphology is induced by chemisorption of atomic oxgyen at the Au(111) surface. © 1995 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
81.05.Bx Metals, semimetals, and alloys

Bond‐structure changes of liquid phase deposited oxide (SiO2−xFx) on N2 annealing

Ching‐Fa Yeh, Chun‐Lin Chen, Water Lur, and Po‐Wen Yen

Appl. Phys. Lett. 66, 938 (1995); http://dx.doi.org/10.1063/1.113603 (3 pages) | Cited 5 times

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Fluorine can be naturally incorporated into the silicon oxide (SiO2−xFx) prepared by the liquid phase deposition (LPD) method at 35 °C. Fourier transform infrared and x‐ray photoelectron spectroscopy spectra show that an annealing treatment can change its bond‐structure. Changes in properties accompanying the restructuring are also observed. The annealing also densifies the LPD oxide and reduces its thickness because Si–F intensity decreases and the Si–O–Si intensity increases as annealing temperature increases. © 1995 American Institute of Physics.  
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61.72.up Other materials

Mechanical properties of submicron‐grained TiAl alloys prepared by mechanical alloying

M. Oehring, F. Appel, Th. Pfullmann, and R. Bormann

Appl. Phys. Lett. 66, 941 (1995); http://dx.doi.org/10.1063/1.113604 (3 pages) | Cited 27 times

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Ti‐48 at. % Al powders of the metastable hexagonal‐closed‐packed solid solution with a grain size of 15 nm were prepared by mechanical alloying. The powders were consolidated to a density of greater than 99.5% by hot isostatic pressing (HIP) at 800 °C. After HIP the material exhibits a globular microstructure of the equilibrium phases α2 and γ with a mean grain size of 150 nm. Microhardness measurements show a Hall–Petch type [E. O. Hall, Proc. Phys. Soc. B 64, 747 (1951); N. J. Petch, J. Iron Steel Inst. 174, 25 (1953)] dependence on grain size. Room temperature compression tests reveal low ductility, but high fracture strengths ≥1800 MPa. On increasing the test temperature the yield strength drops sharply in the temperature range 600–800 °C to very low values. The results indicate that submicron‐grained TiAl alloys can be deformed at much lower temperatures than coarse‐grained material, making them suitable as precursors for net shaping, in particular if high deformation ratios are required. © 1995 American Institute of Physics.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
62.20.-x Mechanical properties of solids
81.05.Rm Porous materials; granular materials

Ordered, quasiepitaxial growth of an organic thin film on Se‐passivated GaAs(100)

Y. Hirose, S. R. Forrest, and A. Kahn

Appl. Phys. Lett. 66, 944 (1995); http://dx.doi.org/10.1063/1.113605 (3 pages) | Cited 20 times

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Films of the organic semiconductor 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) are deposited at room temperature in ultrahigh vacuum on the (2×4)‐c‐(2×8) As‐terminated, and the (2×1) Se‐passivated (100) GaAs surfaces. The PTCDA deposition on the (2×4)‐c(2×8) surface produces domains randomly oriented in the plane parallel to the interface, giving rise to diffuse ringlike low energy electron diffraction (LEED) patterns. A marked improvement in the PTCDA molecular order is observed for the growth on the Se‐passivated substrate. The resulting LEED patterns are sharp, and indicate that the interface molecular unit cells are azimuthally oriented with respect to the Se‐dimers. The improvement in the crystallinity of the PTCDA layer is attributed to the termination of the chemically active sites by Se and to the smoothness of the Se‐passivated surface. This work provides information as to the conditions under which the quasiepitaxial growth of a lattice mismatched van der Waals film oriented to the substrate can be achieved. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology

X‐ray reciprocal space mapping of GaAs/AlAs quantum wires and quantum dots

A. A. Darhuber, E. Koppensteiner, G. Bauer, P. D. Wang, Y. P. Song, C. M. Sotomayor Torres, and M. C. Holland

Appl. Phys. Lett. 66, 947 (1995); http://dx.doi.org/10.1063/1.113606 (3 pages) | Cited 5 times

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Periodic arrays of 150 and 175 nm‐wide GaAs–AlAs quantum wires and quantum dots were investigated, fabricated by electron beam lithography, and SiCl4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x‐ray diffractometry. From the x‐ray data the lateral periodicity of wires and dots, and the etch depth are extracted. The reciprocal space maps reveal that after the fabrication process the lattice constant along the growth direction slightly increases for the wires and even more so for the dots. © 1995 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.

Infrared reflection spectra of CdIn2O4 films

Wanlu Wang and Kejun Liao

Appl. Phys. Lett. 66, 950 (1995); http://dx.doi.org/10.1063/1.113607 (3 pages) | Cited 2 times

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The infrared (IR) reflection spectra of CdIn2O4 films produced by rf reactive sputtering from a Cd‐In alloy target in a reactive Ar+O2 atmosphere have been investigated. Experimental results show that IR reflection spectra from CdIn2O4 films changed with increasing oxygen concentration and heat treatment, and the results obtained are discussed briefly. © 1995 American Institute of Physics.  
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78.30.Hv Other nonmetallic inorganics
78.66.Li Other semiconductors
81.15.Cd Deposition by sputtering

Growth mode transition and photoluminescence properties of Si1−xGex/Si quantum well structures with high Ge composition

H. Sunamura, Y. Shiraki, and S. Fukatsu

Appl. Phys. Lett. 66, 953 (1995); http://dx.doi.org/10.1063/1.113608 (3 pages) | Cited 47 times

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Correlation between growth mode transition and photoluminescence (PL) properties of Si1−xGex/Si quantum wells (QWs) with high Ge composition grown by gas‐source molecular beam epitaxy is investigated. With increasing Ge composition in the QWs, significant deviation from the theoretical calculation is observed for x≳0.4 in the emission energy and the activation energy obtained from the temperature dependence of integrated PL intensity. Transmission electron microscopy reveals emergence of islands for x≳0.4, implying strong correlation with the anomalous PL properties. Observed PL properties are shown to be well explained by the breakdown of two‐dimensional growth. An attempt to grow luminescent QWs with flat interfaces is also presented. © 1995 American Institute of Physics.  
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78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Estimation of mean acoustic reflection coefficient of polycrystalline aggregate

I. Ihara, H. Koguchi, T. Aizawa, and J. Kihara

Appl. Phys. Lett. 66, 956 (1995); http://dx.doi.org/10.1063/1.113609 (3 pages)

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Mean reflection coefficients of plane acoustic waves incident on a liquid‐polycrystals interface are examined experimentally and numerically. The mean reflection coefficient is defined as the complex average value of the reflection coefficient for all the crystals existing in the measurement area. Experiments are performed for a texture controlled low‐carbon steel which can be identified as the transversely isotropic polycrystalline material. The measured reflection coefficient agrees qualitatively with the mean reflection coefficient calculated by the integration of the reflection coefficients for each single crystal on the measurement area. © 1995 American Institute of Physics.
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43.20.Fn Scattering of acoustic waves
68.35.Gy Mechanical properties; surface strains
07.64.+z Acoustic instruments and equipment

In‐plane polarized optical interconduction‐subband transitions in quantum wells

Rui Q. Yang

Appl. Phys. Lett. 66, 959 (1995); http://dx.doi.org/10.1063/1.113610 (3 pages) | Cited 8 times

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In this work, it has been shown within the framework of a simple one‐band model how the in‐plane polarized optical interconduction‐subband transitions could simply occur in quantum well structures. A novel approach is proposed for manipulating optical properties through the band‐gap engineering based on the spatial features of wave functions. The underlying physics and consequences for device applications are discussed. © 1995 American Institute of Physics.
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78.66.-w Optical properties of specific thin films
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.60.-q Optoelectronic devices

On the carrier mobility in forward‐biased semiconductor barriers

Mark Lundstrom and Shin’ichi Tanaka

Appl. Phys. Lett. 66, 962 (1995); http://dx.doi.org/10.1063/1.113611 (3 pages) | Cited 6 times

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A simple one‐speed solution to the Boltzmann equation is used to evaluate the mobility and diffusion coefficient for carriers in forward‐biased semiconductor barriers. The analysis shows that although the average kinetic energy of carriers remains near thermal equilibrium, the mobility and diffusion coefficient are strongly reduced by the built‐in field. Conventional macroscopic transport equations, which treat the carrier mobility and diffusion coefficient as single valued functions of the kinetic energy will improperly treat transport in forward‐biased barriers. The results are important for the careful analysis of metal–semiconductor and heterojunction diodes. © 1995 American Institute of Physics.
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73.40.-c Electronic transport in interface structures

Stable hydrogenated amorphous silicon films deposited from silane and dichlorosilane by radio frequency plasma chemical vapor deposition

Ian S. Osborne, Nobuhiro Hata, and Akihisa Matsuda

Appl. Phys. Lett. 66, 965 (1995); http://dx.doi.org/10.1063/1.113612 (3 pages) | Cited 7 times

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Hydrogenated amorphous silicon films have been grown by radio frequency (rf) plasma chemical vapor deposition with the addition of small amounts (up to 20%) of dichlorosilane to the silane. Results show that as the amount of dichlorosilane is increased, the films are more resilient to the creation of light induced defects. Under intense pulsed laser illumination (5 mJ/pulse, 10 ns, 10 Hz) the steady state defect density measured by the constant photocurrent method (CPM) is reduced by over one order of magnitude to 4×1016 cm−3 as compared to ∼5×1017 cm−3 for films grown under identical conditions with pure silane. Furthermore, there is a threefold increase in the deposition rate over the range of mixture ratios studied here. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Growth morphology and characteristic structure in nanocrystalline Si film of high conductivity

L. C. Wang, D. Feng, T. Epicier, C. Esnouf, H. Xia, Y. L. He, Q. Li, Y. M. Chu, and N. B. Ming

Appl. Phys. Lett. 66, 968 (1995); http://dx.doi.org/10.1063/1.113613 (3 pages) | Cited 6 times

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A new type of hydrogenated nanocrystalline Si film with high electronic conductivity is investigated by means of transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Nearly parallel columnar structures with growth orientation along the [110] zone axis of Si are found from cross‐sectional TEM images of the film. HRTEM observation reveals that these columns are composed of nanocrystallites (3–6 nm size) and dendritelike growth morphology, while in the region between columns the texture consists of smaller sized (<3 nm) grains embedded in a hydrogenated amorphous Si. The volume fraction of the crystalline component is about 58% measured by Raman spectroscopy. The conductivity of the film is very high, about 10−1 (Ω cm)−1. It is considered that this is directly related to the characteristic structure of the film. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
73.61.Le Other inorganic semiconductors

Investigation of the distribution of silicon interstitials in silicon and silicon‐on‐insulator structures after thermal oxidation

D. Tsoukalas and C. Tsamis

Appl. Phys. Lett. 66, 971 (1995); http://dx.doi.org/10.1063/1.113815 (3 pages) | Cited 4 times

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In this work we investigate the diffusion of silicon interstitials in bulk silicon and silicon‐on‐insulator structures. The interstitials that are injected by an oxidation process are monitored by the growth of oxidation stacking faults. The silicon‐on‐insulator structures are obtained by the silicon wafer bonding technique that gives us the advantage of monitoring both the lateral and the vertical distribution of point defects by special pretreatment of the bonded wafers. We observe a decrease in the lateral diffusion of interstitials as the thickness of silicon decreases. Simulation of these results reveals fundamental properties of point defects. © 1995 American Institute of Physics.
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61.72.J- Point defects and defect clusters
66.30.Lw Diffusion of other defects

Detection of metal induced gap states in silicon

T. A. Railkar and S. V. Bhoraskar

Appl. Phys. Lett. 66, 974 (1995); http://dx.doi.org/10.1063/1.113816 (2 pages) | Cited 2 times

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An experimental technique involving the measurement of thermally stimulated exoelectron emission has been shown to be capable to detecting the surface states, caused by the presence of metal impurities, at the surface of silicon. The ionization energies of the surface states induced by the thermal diffusion of silver, gold, copper, and aluminum in silicon are estimated from this technique. © 1995 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
79.75.+g Exoelectron emission

Nanoscale oxide patterns on Si(100) surfaces

T.‐C. Shen, C. Wang, J. W. Lyding, and J. R. Tucker

Appl. Phys. Lett. 66, 976 (1995); http://dx.doi.org/10.1063/1.113817 (3 pages) | Cited 28 times

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Ultrathin oxide patterns of a linewidth of 50 Å have been created on Si(100)‐2×1 surfaces by a scanning tunneling microscope operating in ultrahigh vacuum. The oxide thickness is estimated to be 4–10 Å. The morphology and spectroscopy of the oxide region are obtained. Hydrogen passivation is used as an oxidation mask. The defects caused by oxidation in the passivated region before and after the hydrogen desorption are compared and discussed. The multistep silicon processings by an ultrahigh vacuum scanning tunneling micropscope is thus demonstrated. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
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