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27 Feb 1995

Volume 66, Issue 9, pp. 1027-1149

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Sharp excitonic photoluminescence from epitaxial InAs

Y. Lacroix, S. P. Watkins, C. A. Tran, and M. L. W. Thewalt

Appl. Phys. Lett. 66, 1101 (1995); http://dx.doi.org/10.1063/1.113825 (3 pages) | Cited 15 times

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The optically excited luminescence of epitaxial InAs has been studied at 1.4 K, revealing well‐resolved emission lines identified as the exciton–polariton, neutral–acceptor–bound exciton principal and two‐hole transitions, donor–acceptor pair band, and phonon assisted transitions. These features are seen in samples of high purity InAs grown by metalorganic chemical vapor deposition on InAs substrates using tertiarybutylarsine and trimethylindium. Only one acceptor species is observed, having a 1 S3/2–2 S3/2 transition energy of 13.39±0.01 meV, and an acceptor–bound exciton binding energy of 2.11±0.03 meV. © 1995 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
71.55.Eq III-V semiconductors

Optically switched resonant tunneling diodes

T. S. Moise, Y.‐C. Kao, L. D. Garrett, and J. C. Campbell

Appl. Phys. Lett. 66, 1104 (1995); http://dx.doi.org/10.1063/1.113826 (3 pages) | Cited 19 times

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The room‐temperature photoinduced switching of an InGaAs/AlAs resonant‐tunneling diode is demonstrated. When illuminated at an irradiance of greater than 20 W cm−2 using 1.3 μm radiation, the resonant‐tunneling diode switches from a high‐conductance to a low‐conductance electrical state and exhibits a voltage swing of 600 mV. The switching characteristics are reversible and, in the absence of light, the detector returns to its original high conductance operating state. Small‐signal optical measurements performed with the device biased prior to resonance demonstrate a 3 dB bandwidth of ∼1.5 GHz. © 1995 American Institute of Physics.
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73.40.Gk Tunneling
73.50.Pz Photoconduction and photovoltaic effects
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Observation of dressed‐exciton oscillating emission over a wide wavelength range in a semiconductor microcavity

H. Cao, J. Jacobson, G. Björk, S. Pau, and Y. Yamamoto

Appl. Phys. Lett. 66, 1107 (1995); http://dx.doi.org/10.1063/1.113827 (3 pages) | Cited 37 times

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We have observed the dressed‐exciton oscillating emission in the time domain and the associated spectral splitting in the frequency domain from a GaAs single quantum well microcavity over a very broad range of cavity resonant wavelengths. The spectral splitting and temporal oscillation period have been measured to be nearly constant over two orders of magnitude variation of pump intensity, which confirms the linear bosonic feature of Wannier excitons in the weak excitation regime. © 1995 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes

Heat transport properties of semiconductors under nonuniform stress

K. Aflatooni and A. Nathan

Appl. Phys. Lett. 66, 1110 (1995); http://dx.doi.org/10.1063/1.113828 (2 pages) | Cited 1 time

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The effects of an inhomogeneous stress field on the heat transport in semiconductors are qualitatively studied. Stress‐induced spatial variations in lattice constant results in changes in phonon frequency and hence, in the phonon distribution leading to diffusion of phonons which constitutes heat flux at the macroscopic level. It is also found that this leads to a fractional change in thermal conductivity that is linear with the local stress tensor. © 1995 American Institute of Physics.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
63.20.-e Phonons in crystal lattices
62.50.-p High-pressure effects in solids and liquids
65.20.-w Thermal properties of liquids
65.40.gd Entropy

p‐type conduction in Mg‐doped Ga0.91In0.09N grown by metalorganic vapor‐phase epitaxy

S. Yamasaki, S. Asami, N. Shibata, M. Koike, K. Manabe, T. Tanaka, H. Amano, and I. Akasaki

Appl. Phys. Lett. 66, 1112 (1995); http://dx.doi.org/10.1063/1.113829 (2 pages) | Cited 25 times

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p‐type conduction in InN‐containing nitrides doped with Mg has been achieved by metalorganic vapor‐phase epitaxy. The hole concentration at room temperature is as high as 7×1017 cm−3. The activation energy of a Mg acceptor is estimated to be 204 meV. D–A pair emission with peak wavelength of about 405 nm is enhanced by thermal annealing. © 1995 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Ey III-V semiconductors
71.55.Eq III-V semiconductors

Visible luminescence from one‐ and two‐dimensional silicon structures produced by conventional lithographic and reactive ion etching techniques

A. G. Nassiopoulos, S. Grigoropoulos, E. Gogolides, and D. Papadimitriou

Appl. Phys. Lett. 66, 1114 (1995); http://dx.doi.org/10.1063/1.113830 (3 pages) | Cited 29 times

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Visible luminescence from silicon nanostructures fabricated by using conventional lithographic and reactive ion etching techniques and final thinning by high temperature thermal oxidation was obtained at room temperature under 488 nm argon laser excitation. Highly anisotropic vertical silicon pillars with aspect ratios as high as 25:1 and diameter below 0.1 μm, as well as silicon walls of the same sizes were first produced, which were further thinned by several cycles of thermal oxidation and oxide removal by HF dip. Sub‐10 nm diameter silicon pillars and same thickness silicon walls with height in the μm range were thus produced. The fabrication process involved high resolution deep‐UV lithography, highly anisotropic silicon etching, and final thinning of the silicon structures by oxidation and oxide removal. The initial pattern of dots and lines was defined by optical lithography using the well known silylation process. The resolution of the process in dot and line size definition was equal to 0.22 μm but lower dimensions down to less than 0.1 μm were obtained in overexposed regions during dry development in a plasma reactor. Three different masks were used for the silicon etching: Cr or Al metal masks or silylated photoresist, all being resistant to the silicon etchants. Highly anisotropic reactive ion etching was achieved by a process using a mixture of SF6 and CHF3 gases at room temperature. © 1995 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Precipitation in heavily arsenic‐implanted GexSi1−x alloys

T. W. Fan, A. Nejim, J. P. Zhang, Z. G. Wang, P. L. F. Hemment, and D. Chescoe

Appl. Phys. Lett. 66, 1117 (1995); http://dx.doi.org/10.1063/1.113831 (3 pages) | Cited 7 times

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We report a study of precipitation and diffusion in Ge0.5Si0.5 alloy implanted with As+ ions at an energy of 100 keV with a dose of 6×1016 cm−2 and subsequently annealed at 800 and 1000 °C for 1 h. The samples were analyzed by transmission electron microscopy and x‐ray energy dispersive spectrometry. A high density of precipitates was observed near the surface of the samples after annealing both at 800 and 1000 °C. The behavior of the precipitation is strongly dependent on the anneal temperature. When the anneal temperature increases, the average size of precipitates increases and the distribution of the precipitates is localized in the vicinity of the surface. X‐ray spectra show that most of the largest precipitates formed during the annealing are arsenides. Rodlike precipitates formed during the thermal annealing at 800 °C are tentatively identified as monoclinic GeAs by selected electron diffraction patterns. © 1995 American Institute of Physics.
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61.72.up Other materials
61.72.Cc Kinetics of defect formation and annealing
61.80.Jh Ion radiation effects

High‐field domain formation in GaAs/AlGaAs superlattices

Z. Y. Han, S. F. Yoon, K. Radhakrishnan, and D. H. Zhang

Appl. Phys. Lett. 66, 1120 (1995); http://dx.doi.org/10.1063/1.113832 (3 pages) | Cited 3 times

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The formation of high‐field domains in a semiconductor superlattice is verified using a GaAs/AlGaAs superlattice structure with multiple‐quantum wells of different well thicknesses but identical barrier width grown by molecular beam epitaxy. Low‐temperature current–voltage (I–V) measurements under forward and reverse bias showed that the high‐field domain is first formed at the region of wider well thickness instead of preferentially at the anode or the cathode. The electron tunneling process through a tight‐binding superlattice with weak coupling between adjacent wells is discussed in terms of the formation and extension of the high‐field domains through the superlattice region. © 1995 American Institute of Physics.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Fq High-field and nonlinear effects

The S‐passivation of Ge(100)‐(1×1)

G. W. Anderson, M. C. Hanf, P. R. Norton, Z. H. Lu, and M. J. Graham

Appl. Phys. Lett. 66, 1123 (1995); http://dx.doi.org/10.1063/1.113833 (3 pages) | Cited 33 times

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The treatment of Ge(100) in an aqueous ammonium sulfide solution is investigated by means of x‐ray photoelectron spectroscopy, Auger electron spectroscopy, low‐energy electron diffraction, scanning electron microscopy, and atomic force microscopy. This treatment is shown to produce an S‐passivated Ge(100)‐(1×1) surface, where the S atoms appear to be bridge bonded to the Ge atoms. Desorption of the S is observed to occur between 460 and 750 K and results in a Ge(100)‐(1×1) surface with a surface morphology similar to that of the initial sample. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
68.35.Dv Composition, segregation; defects and impurities
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitrides

M.‐Y. Hao, W.‐M. Chen, K. Lai, J. C. Lee, M. Gardner, and J. Fulford

Appl. Phys. Lett. 66, 1126 (1995); http://dx.doi.org/10.1063/1.113834 (3 pages) | Cited 26 times

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In this letter, the dielectric breakdown characteristics of thermal oxides and N2O‐based oxynitrides have been studied. A direct correlation was found between dielectric breakdown and the hole current generated within the gate dielectrics. The dependence of dielectric breakdown on oxide thickness was also studied. It was found that both charge‐to‐breakdown and hole‐fluence‐to‐breakdown for the N2O oxynitrides were higher than those for the thermal oxides throughout the thickness range studied (33–87 Å). The results suggest that N2O oxynitrides can sustain more damage before breakdown and thus have superior dielectric integrity compared to the thermal oxides. © 1995 American Institute of Physics.
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77.55.-g Dielectric thin films
77.22.Jp Dielectric breakdown and space-charge effects
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Calculated second‐harmonic susceptibilities of BN, AlN, and GaN

Jian Chen, Zachary H. Levine, and John W. Wilkins

Appl. Phys. Lett. 66, 1129 (1995); http://dx.doi.org/10.1063/1.113835 (3 pages) | Cited 40 times

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We report calculations for the dielectric constant ε∞ and the second‐harmonic susceptibility d for BN, AlN, and GaN in both zincblende and wurtzite structures within the Kohn–Sham local‐density approximation. For wurtzite AlN and GaN, the computed dxxz(w) and dzzz(w) closely agree with experiment. For zincblende AlN and GaN as well as zincblende and wurtzite BN, we predict d. Our results show that the simple relation between the independent components of d predicted by bond additivity works for BN, breaks down for GaN, and completely fails for AlN. © 1995 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.An Optical susceptibility, hyperpolarizability
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Coimplantation of carbon implanted GaAs: Energy and dose rate observations

R. Morton, B. Zhu, S. S. Lau, and D. B. Poker

Appl. Phys. Lett. 66, 1132 (1995); http://dx.doi.org/10.1063/1.113836 (3 pages) | Cited 8 times

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Coimplantations of carbon implanted GaAs at doses of mtsp;5×1013 and mtsp;5×1014 cm−2 were performed at room temperature using argon, gallium, arsenic, and krypton ions with varying beam intensity. The electrical activation of carbon implanted gallium arsenide as a function of coimplanted dose, energy, and dose rate has been studied. For moderate carbon and coimplant doses of mtsp;5×1013 cm−2 increasing the dose rate of the coimplant improved the carbon activation, while at high carbon and coimplant doses of mtsp;5×1014 cm−2 the opposite trend was observed. The dose rate effects were found to be similar in magnitude as the well‐known stoichiometric effects for coimplantation. This study illustrates the importance of damage production and placement for carbon activation. © 1995 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
61.80.Jh Ion radiation effects
71.55.Eq III-V semiconductors

Picosecond optical response of Tl2Ba2CaCu2O8 and Tl0.5Pb0.5Sr2(Ca0.8Y0.2)Cu2O7 high Tc superconductor films

Y. S. Lai, Y. Q. Liu, W. L. Cao, Chi H. Lee, Zhi‐Yuan Shen, Philip Pang, Dennis J. Kountz, and William L. Holstein

Appl. Phys. Lett. 66, 1135 (1995); http://dx.doi.org/10.1063/1.113837 (3 pages) | Cited 7 times

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We have investigated the optical response of 700 nm optically thick Tl2Ba2CaCu2O8 and Tl0.5Pb0.5Sr2(Ca0.8Y0.2)Cu2O7 high Tc superconductor films activated by a few mJ/cm2 laser pulses. We have systematically studied the dependence of optical response on temperature and laser intensity. Fast and slow components can be clearly identified. A 70 ps electric transient has been obtained when activated by a 3.3 mJ/cm2 laser at 80 K or by a 10 mJ/cm2 laser at 50 K. © 1995 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.25.Gz Optical properties

High‐resolution scanning SQUID microscope

J. R. Kirtley, M. B. Ketchen, K. G. Stawiasz, J. Z. Sun, W. J. Gallagher, S. H. Blanton, and S. J. Wind

Appl. Phys. Lett. 66, 1138 (1995); http://dx.doi.org/10.1063/1.113838 (3 pages) | Cited 147 times

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We have combined a novel low temperature positioning mechanism with a single‐chip miniature superconducting quantum interference device (SQUID) magnetometer to form an extremely sensitive new magnetic microscope, with a demonstrated spatial resolution of ∼10 μm. The design and operation of this scanning SQUID microscope will be described. The absolute calibration of this instrument with an ideal point source, a single vortex trapped in a superconducting film, will be presented, and a representative application will be discussed. © 1995 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
07.79.-v Scanning probe microscopes and components
07.55.-w Magnetic instruments and components

Near‐field magneto‐optical imaging in scanning tunneling microscopy

M. W. J. Prins, R. H. M. Groeneveld, D. L. Abraham, H. van Kempen, and H. W. van Kesteren

Appl. Phys. Lett. 66, 1141 (1995); http://dx.doi.org/10.1063/1.113839 (3 pages) | Cited 16 times

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Images of magnetic bits written in a Pt/Co multilayer are presented. Using photosensitive semiconducting tips in a scanning tunneling microscope, both surface topography as well as polarization‐dependent optical transmission are measured. Magnetic contrast is achieved by detection of the Faraday effect. Magneto‐optical lateral resolution of 250 nm is demonstrated. © 1995 American Institute of Physics.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
07.55.-w Magnetic instruments and components
07.79.-v Scanning probe microscopes and components

Far‐infrared radiation‐induced thermopower in a quantum point contact

Rolf A. Wyss, C. C. Eugster, J. A. del Alamo, Qing Hu, M. J. Rooks, and M. R. Melloch

Appl. Phys. Lett. 66, 1144 (1995); http://dx.doi.org/10.1063/1.113840 (3 pages) | Cited 15 times

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We have observed a far‐infrared (0.3–2.5 THz) radiation‐induced photovoltaic signal in an antenna‐coupled quantum point contract, which oscillates with the gate voltage and peaks at the onset of each subband. The polarity of this photovoltaic signal can be reversed by shifting the far‐infrared beam from the drain to the source, or vice versa. This signal has been unambiguously attributed to thermopower generated by asymmetric heating of the drain and the source by the far‐infrared radiation. Quantitative agreement has been obtained between measurements and calculations based on ballistic transport in one‐dimensional electron systems and the electrical and thermal circuit elements in our experimental system. © 1995 American Institute of Physics.
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72.20.Pa Thermoelectric and thermomagnetic effects

Observation of electric field gradients near field‐emission cathode arrays

Y. Liang, D. A. Bonnell, W. D. Goodhue, D. D. Rathman, and C. O. Bozler

Appl. Phys. Lett. 66, 1147 (1995); http://dx.doi.org/10.1063/1.113841 (3 pages) | Cited 12 times

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The variation of electric field gradient above arrays of field emission cathodes has been investigated using atomic force microscopy. The spatial distribution of electric field gradient was obtained as a function of bias and height. Results show a parabolic relationship between the sample bias and electric field gradient. Furthermore, the height dependence of the field gradient is found to follow a power law relationship. These new results demonstrate that force‐gradient atomic force microscopy is capable of providing a direct visual presentation of the variation of field gradients above submicron‐periodicity field emitter arrays. © 1995 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
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