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3 Jul 1995

Volume 67, Issue 1, pp. 1-146

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First order distributed feedback operation in ZnSe based laser structures

M. Illing, G. Bacher, A. Forchel, D. Hommel, B. Jobst, and G. Landwehr

Appl. Phys. Lett. 67, 1 (1995); http://dx.doi.org/10.1063/1.115478 (3 pages) | Cited 27 times

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First order distributed feedback laser with periods down to 94 nm based on ZnSe have been realized by electron beam lithography and wet chemical etching. Distributed feedback operation was demonstrated by optical excitation using a pulsed N2 laser. A threshold density of 80 kW/cm2 was found at room temperature for a resonator length of 225 μm. From the stop band width, a coupling coefficient of 120 cm−1 can be estimated. By varying the grating period the emission wavelength can be tuned over a wide spectral range of more than 130 meV. Measurements in the range between 20 and 300 K show that the shift of the emission wavelength with temperature is reduced by more than a factor of four as compared to the temperature shift of the spontaneous emission. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Hf II-VI semiconductors

Threshold characteristics of planar and index‐guided microcavity lasers

D. L. Huffaker, D. G. Deppe, and J. Shin

Appl. Phys. Lett. 67, 4 (1995); http://dx.doi.org/10.1063/1.115489 (3 pages) | Cited 8 times

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Lasing threshold modes are studied experimentally for microcavity lasers fabricated to operate either as planar cavities, in which the mode is established by the emitter distribution, or as index‐guided modes in the planar cavity with weak three‐dimensional confinement. For no lateral index guiding, the lasing mode area is suggested to depend on the gain saturation. For lateral index confinement to a small area, spectral and radiation pattern measurements show that the spontaneous emission coupling is increased, and reduces the lasing threshold even in the presence of an increased loss. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.Jb Light-emitting devices

Violet light emitting SrS/SrCl:Eu thin‐film electroluminescent devices

W. Kong, S. Ahmed, J. Ferguson, and R. Solanki

Appl. Phys. Lett. 67, 7 (1995); http://dx.doi.org/10.1063/1.115514 (3 pages) | Cited 11 times

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Emission of bright (over 9 cd/m2) violet light centered at 404 nm has been achieved from SrS:Eu thin‐film electroluminescent (EL) devices. The brightness has remained stable after several hours of operation. The source of this light is believed to be the 5d–4f transition of Eu2+ in the SrCl2 host, which is formed near the ZnS/SrS interfaces within the sandwich structure of the EL devices. Similar device structures were also utilized to produce ultraviolet EL emission at 367 nm from SrCl2:Ce3+ layers. These devices were grown via atomic layer epitaxy. © 1995 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Li Other semiconductors
85.60.Jb Light-emitting devices

Enhancement of the response rate of internal reflection self‐pumped phase conjugators with Ce‐ and Mn‐doped (K0.5Na0.5)0.2(Sr0.75Ba0.25)0.9Nb2O6 crystals using intermittent light

Jingwen Zhang, Liangmin Zhang, Xiaodong Mu, Zongshu Shao, Huanchu Chen, and Minhua Jiang

Appl. Phys. Lett. 67, 10 (1995); http://dx.doi.org/10.1063/1.115499 (3 pages) | Cited 4 times

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Dramatic enhancement of the response rate of internal reflection self‐pumped phase conjugators with Ce‐ and Mn‐doped (K0.5Na0.5)0.2(Sr0.75Ba0.25)0.9Nb2O6 crystals is observed with an intermittent laser beam as the pumping beam. Analysis that involves charge carrier migration driven by a photoinduced electric field is given. © 1995 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Third‐order nonlinearity of semiconductor doped glasses at frequencies below band gap

G. P. Banfi, V. Degiorgio, D. Fortusini, and H. M. Tan

Appl. Phys. Lett. 67, 13 (1995); http://dx.doi.org/10.1063/1.115473 (3 pages) | Cited 28 times

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We measured, through nearly degenerate three‐wave mixing, the third‐order nonlinear optical susceptibility of semiconductor doped glasses at frequencies below band gap. With typical 1.5%–5% volume fractions, the CdTe and CdS1−xSex nanocrystals give a contribution to the nonlinearity of the composite that is comparable to that of the glass matrix. The magnitude and the band‐gap dependence of the nonlinear susceptibility of the nanocrystals are similar to those of the bulk semiconductors. © 1995 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.An Optical susceptibility, hyperpolarizability
61.46.-w Structure of nanoscale materials
78.66.Hf II-VI semiconductors

Calculated differential reflectance of the (110) surface of cubic silicon carbide

V. I. Gavrilenko

Appl. Phys. Lett. 67, 16 (1995); http://dx.doi.org/10.1063/1.115476 (3 pages) | Cited 9 times

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Surface band structure and differential reflectance spectra of the (110)(1×1) surface of cubic silicon carbide crystals are investigated within a self‐consistent tight binding theory. The surface electronic band structure is characterized by the pronounced surface states in the gap and show metallic character. Optical transitions between the surface states cause an enormous reflectivity within the range of 1.0 to 1.5 eV and reveal strong polarization anisotropy. Influence of the atomic geometry of the (110)(1×1) surface on the differential reflectance of 3C SiC is studied. © 1995 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Li Other semiconductors

Broadly tunable sub‐500 fs pulses from an additive‐pulse mode‐locked thulium‐doped fiber ring laser

L. E. Nelson, E. P. Ippen, and H. A. Haus

Appl. Phys. Lett. 67, 19 (1995); http://dx.doi.org/10.1063/1.115477 (3 pages) | Cited 44 times

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We report an additive‐pulse mode‐locked (APM) thulium‐doped fiber ring laser producing 350–500 fs pulses tunable from 1798 to 1902 nm. The laser operates in the soliton regime, where periodic perturbations cause predictable sidebands and modulation in the optical spectrum. © 1995 American Institute of Physics.
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42.55.Wd Fiber lasers
42.60.By Design of specific laser systems

Background limited performance in p‐doped GaAs/Ga0.71In0.29As0.39P0.61 quantum well infrared photodetectors

J. Hoff, S. Kim, M. Erdtmann, R. Williams, J. Piotrowski, E. Bigan, M. Razeghi, and G. J. Brown

Appl. Phys. Lett. 67, 22 (1995); http://dx.doi.org/10.1063/1.115479 (3 pages) | Cited 2 times

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Background limited infrared photodetection has been achieved up to 100 K at normal incidence with p‐type GaAs/Ga0.71In0.29As0.39P0.61 quantum well intersubband photodetectors grown by low‐pressure metalorganic chemical vapor deposition. Photoresponse covers the wavelength range from 2.5 μm up to 7 μm. The device shows photovoltaic response, the cutoff wavelength increases slightly with bias, and the responsivity increases nonlinearly with bias. These effects are attributed to an asymmetric quantum well profile. © 1995 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects
73.40.Ty Semiconductor-insulator-semiconductor structures
73.61.Ey III-V semiconductors

Measurement and analysis of terahertz radiation from bulk semiconductors

M. Li, F. G. Sun, G. A. Wagoner, M. Alexander, and X.‐C. Zhang

Appl. Phys. Lett. 67, 25 (1995); http://dx.doi.org/10.1063/1.115480 (3 pages) | Cited 11 times

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We report the recent measurement and analysis of the transmitted and pseudoreflected optically induced terahertz (THz) beams emitted from a semiconductor wafer under femtosecond laser illumination, where the static electric field is either parallel or perpendicular to the surface. In general, the amplitude of the transmitted THz field is different from that of pseudoreflected THz field, except at the Brewster angle. © 1995 American Institute of Physics.
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78.20.-e Optical properties of bulk materials and thin films
78.47.-p Spectroscopy of solid state dynamics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Combined differential amplitude and phase interferometer with a single probe beam

M. B. Suddendorf, C. W. See, and M. G. Somekh

Appl. Phys. Lett. 67, 28 (1995); http://dx.doi.org/10.1063/1.115481 (3 pages) | Cited 3 times

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A novel interferometer capable of measuring differential amplitude and phase with a single probe beam is presented. Differentiation in any direction can be performed in the detector plane which allows the system transfer function to be modified without altering the optical configuration. Differential amplitude and phase results are given for different detector arrangements and compared with theoretical predictions showing excellent agreement. © 1995 American Institute of Physics.
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07.60.Ly Interferometers
42.30.Lr Modulation and optical transfer functions

CdF2:In: A novel material for optically written storage of information

A. I. Ryskin, A. S. Shcheulin, B. Koziarska, J. M. Langer, A. Suchocki, I. I. Buczinskaya, P. P. Fedorov, and B. P. Sobolev

Appl. Phys. Lett. 67, 31 (1995); http://dx.doi.org/10.1063/1.115482 (3 pages) | Cited 49 times

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We demonstrate that semiconducting CdF2 crystals doped with indium is an efficient medium for optical storage of information in static and dynamic regimes. A metastable phototransformation of 1018 cm−3 In centers from a localized deep state to a hydrogenlike shallow state leads to a change of the refractive index Δn of about 10−4 for the probe beam at the wavelength of 500 nm. The diffraction efficiency is temperature dependent due to spontaneous decay of the grating caused by thermal recovery of the In impurity from the metastable hydrogenic state to the localized ground state. © 1995 American Institute of Physics.
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42.70.Ln Holographic recording materials; optical storage media
42.40.Lx Diffraction efficiency, resolution, and other hologram characteristics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Characterization of buried thin films with resonant soft x‐ray fluorescence

J. A. Carlisle, L. J. Terminello, E. A. Hudson, R. C. C. Perera, J. H. Underwood, T. A. Callcott, J. J. Jia, D. L. Ederer, F. J. Himpsel, and M. G. Samant

Appl. Phys. Lett. 67, 34 (1995); http://dx.doi.org/10.1063/1.115483 (3 pages) | Cited 13 times

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The geometric and electronic structure of a buried monolayer of boron nitride (BN) has been probed using resonant soft x‐ray fluorescence (SXF). By using the strong π∗ resonance feature in the resonant fluorescence spectrum near the B (1s) threshold, we were able to detect the BN thin film and examine changes in its electronic structure when the monolayer is placed between different materials. Our results demonstrate the capability of the resonant SXF technique for probing the element‐specific electronic structure of a buried thin film nondestructively. © 1995 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
78.70.En X-ray emission spectra and fluorescence

Ultrasonic thin‐walled tube wave devices for sensor applications

X. Li, J. D. N. Cheeke, Z. Wang, C. K. Jen, M. Viens, G. Yi, and M. Sayer

Appl. Phys. Lett. 67, 37 (1995); http://dx.doi.org/10.1063/1.115484 (3 pages) | Cited 8 times

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Integrated gravimetric sensor configurations have been demonstrated by employing a sol–gel processed thin piezoelectric lead zirconate titanate (PZT) film coated coaxially on stainless‐steel tubes and interdigital transducers (IDT) fabricated as the transmitter and receiver on the curved tube surfaces. We have observed tube waves along both the axial and circumferential directions between 1 and 8 MHz. Theoretical analysis indicates that high mass sensitivity can be achieved by keeping the tube wall thin. © 1995 American Institute of Physics.
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43.35.Yb Ultrasonic instrumentation and measurement techniques
07.64.+z Acoustic instruments and equipment
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

SiO2 deposition from oxygen/silane pulsed helicon diffusion plasmas

C. Charles, R. W. Boswell, and H. Kuwahara

Appl. Phys. Lett. 67, 40 (1995); http://dx.doi.org/10.1063/1.115485 (3 pages) | Cited 23 times

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Near‐stoichiometric SiO2 films, with little H incorporation and wet etch rates 1.5–3 times that of thermal oxide, have been deposited in a low pressure oxygen/silane helicon diffusion plasma, which has been pulsed with a 50% duty cycle at frequencies from 0.005 Hz to 1 kHz. At low pulse frequencies, the deposition rate is about 50% of the continuous rate, but as the pulse frequency increases from 0.1 to 100 Hz, the deposition rate increases and equals that for a continuous plasma. A likely explanation is that deposition from silane radicals and oxygen continues to take place in the afterglow after the plasma has extinguished. A simple model gives a time constant for this process of about 200 ms. © 1995 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
52.80.Pi High-frequency and RF discharges
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Low‐temperature growth of epitaxial LiNbO3 films on sapphire (0001) substrates using pulsed laser deposition

See‐Hyung Lee, Tae Kwon Song, T. W. Noh, and Jai‐Hyung Lee

Appl. Phys. Lett. 67, 43 (1995); http://dx.doi.org/10.1063/1.115486 (3 pages) | Cited 16 times

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Epitaxial LiNbO3 films were grown on sapphire (0001) substrates using pulsed laser deposition. A single‐crystal LiNbO3 was used as a target. Growth behaviors of the LiNbO3 films deposited at various deposition conditions such as temperature, oxygen pressure, and annealing condition were studied. Deposition temperature is found to be an important parameter which enables us to grow LiNbO3 films without the LiNb3O8 phase: formation of the Li deficient phase can be suppressed by depositing the films at temperature below 500 °C. Oxygen pressure during deposition influences crystallographic orientations of the films. An x‐ray pole figure shows that epitaxial LiNbO3 film was grown, but with twin boundaries. The ordinary refractive index of the film was found to be 2.28, which is in good agreement with the bulk value. © 1995 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Fg Pulsed laser ablation deposition
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
78.66.Nk Insulators

Cubic boron nitride films grown by low energy B+ and N+ ion beam deposition

H. Hofsäss, C. Ronning, U. Griesmeier, M. Gross, S. Reinke, and M. Kuhr

Appl. Phys. Lett. 67, 46 (1995); http://dx.doi.org/10.1063/1.115487 (3 pages) | Cited 67 times

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We have studied the growth and the properties of BN films prepared by exclusive deposition of mass separated 11B+ and 14N+ ions. BN films grown with ion energies of 500 eV and at substrate temperatures of 350 °C show the IR absorption peak at 1080 cm−1, characteristic for c‐BN. These films are nearly stoichiometric and, with transmission electron diffraction, the presence of c‐BN nanocrystals was revealed. We compare the growth conditions for ion beam deposition on BN, CN, and diamondlike carbon and propose that the nucleation of nanocrystalline c‐BN is related to the ionicity of the BN bond. © 1995 American Institute of Physics.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Unified thermodynamic equation‐of‐state for porous materials in a wide pressure range

Qiang Wu and Fuqian Jing

Appl. Phys. Lett. 67, 49 (1995); http://dx.doi.org/10.1063/1.115488 (3 pages) | Cited 12 times

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Assuming that the specific heat at constant pressure CP, is simply dependent on the pressure or remains constant, a new thermodynamic equation‐of‐state (EOS), which is suitable for the analysis in the isobaric plane, is derived in this letter. Combining with the Rankine–Hugoniot relations, the new EOS can be used to predict the Hugoniot behavior of materials with different initial porosities over a shock pressures range from a few kbar to a few Mbar. The calculated Hugoniots from this model are in good agreement with the reported experimental results. © 1995 American Institute of Physics.
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64.30.-t Equations of state of specific substances
62.50.-p High-pressure effects in solids and liquids

Etching nanometer sized holes of variable depth from carbon cluster impact induced defects on graphite surfaces

Götz Bräuchle, Sabine Richard‐Schneider, Dieter Illig, Jörg Rockenberger, Rainer D. Beck, and Manfred M. Kappes

Appl. Phys. Lett. 67, 52 (1995); http://dx.doi.org/10.1063/1.115490 (3 pages) | Cited 27 times

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Carbon cluster ion impact induced surface damage (500, 1850, and 4000 eV) of highly oriented pyrolytic graphite (HOPG) was imaged on an atomic scale with scanning tunneling microscopy. Penetration depth was accessed by oxygen etching of ion impact induced defects. Depending on ion energy, etched holes up to 6 monolayers deep were observed. Surface morphologies of HOPG crystals can be tailored by the described method promising many applications for surface science studies and nanostructuring. © 1995 American Institute of Physics.
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61.80.Jh Ion radiation effects
61.72.up Other materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments

Low‐damage processing of CdTe(110) surfaces using atomic hydrogen

Y. Luo, D. A. Slater, and R. M. Osgood

Appl. Phys. Lett. 67, 55 (1995); http://dx.doi.org/10.1063/1.115491 (3 pages) | Cited 13 times

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We present the results of an AES, XPS, and LEED study of the reaction of oxide and contaminant overlayers on the CdTe(110) surface with atomic hydrogen. Exposure of an oxidized surface to a flux of atomic hydrogen produced by ‘‘cracking’’ ambient molecular hydrogen on a hot tungsten filament results in a rapid, quantitative removal of the oxide overlayer with substrate temperatures as low as 300 K to produce a stoichiometric surface free of contaminants which has sufficient surface order to produce a sharp (1×1) LEED pattern. © 1995 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Pyroelectric PbSc0.5Ta0.5O3/Y1Ba2Cu3O7−x thin‐film heterostructures

C. Björmander, K. Sreenivas, A. M. Grishin, and K. V. Rao

Appl. Phys. Lett. 67, 58 (1995); http://dx.doi.org/10.1063/1.115492 (3 pages) | Cited 22 times

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A highly c‐axis oriented PbSc0.5Ta0.5O3/Y1Ba2Cu3O7−x (0.5 μm/0.2 μm) thin‐film heterostructure has been grown in situ on LaAlO3 substrates using a Nd:YAG pulsed laser deposition system. The ferroelectric phase transition in the PbSc0.5Ta0.5O3 thin film is broadened, and suppressed to 195 K with a maximum dielectirc permittivity of ϵmax′ (1 kHz)=950. The observed low loss tangent tan δ=0.063 and high pyroelectric coefficient dP/dT=4.8×10−4 Cm−2 K−1 at 195 K renders PbSc0.5Ta0.5O3 films promising for pyroelectric sensor applications. Furthermore, the dielectric properties are easily controlled by the dc bias electric field E. The field dependence of the reduced polarizability αE2/3 is found to be a universal function of (T/Tc−1)E−2/3 over the wide temperature range 77–300 K. This universal behavior is quantitatively explained in the framework of the Landau mean field theory. © 1995 American Institute of Physics.
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77.70.+a Pyroelectric and electrocaloric effects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Fg Pulsed laser ablation deposition

Investigation of minority carrier trapping in n‐type doped ZnSe using photoluminescence decay measurements

J. S. Massa, G. S. Buller, A. C. Walker, J. Simpson, K. A. Prior, and B. C. Cavenett

Appl. Phys. Lett. 67, 61 (1995); http://dx.doi.org/10.1063/1.115493 (3 pages) | Cited 5 times

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Temperature dependent photoluminescence decay measurements have been used to study the minority carrier dynamics in iodine‐doped ZnSe grown by molecular beam epitaxy. The existence of three deep acceptor levels with energies at 80, 120, and 350 meV above the valence band has been established. The 80 and 120 meV levels have a density dependence directly related to the iodine doping density whilst the level at 350 meV does not. Significant broadband donor–acceptor emission is observed from this material and appears to be associated with the acceptor level at 350 meV. © 1995 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.55.Et II-VI semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Enhanced hydrogenation and acceptor passivation in Si by pressurized water boiling

Y. Ohmura, Y. Otomo, Y. Tago, N. Terakado, and T. Satoh

Appl. Phys. Lett. 67, 64 (1995); http://dx.doi.org/10.1063/1.115494 (3 pages) | Cited 4 times

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It has been shown that a pressurized water boiling (PWB) at 2 atmospheric pressures and 120 °C in an autoclave vessel accelerates significantly hydrogenation and neutralization of B acceptors in Si. Compared with boiling at atmospheric pressure, PWB reduces more the free‐hole IR absorption and increases more the sheet resistivity in B implanted p+ layer on n‐type substrate. An IR absorption of B–H stretching vibration (∼1907 cm−1) has been detected at 16 K for a p+ layer which was PWB processed for only 6 h. Concentration increase of H‐related species in water and faster diffusion of H in Si at higher temperature may be the cause. In contrast with other hydrogenation techniques, water boiling hardly passivates donors in Si even for 10 h PWB. © 1995 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.55.Cn Elemental semiconductors
81.40.Gh Other heat and thermomechanical treatments
66.30.J- Diffusion of impurities

Evaluation of the effective hole masses in pseudomorphic compressively strained GaxIn1−xAs/InP quantum wells

S. Rapp, V. Härle, H. Bolay, A. Hangleiter, F. Scholz, W. Limmer, E. Vasiliadou, P. Grambow, and D. Weiss

Appl. Phys. Lett. 67, 67 (1995); http://dx.doi.org/10.1063/1.115509 (3 pages) | Cited 4 times

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The valance band structure of metalorganic vapor phase epitaxy (MOVPE) grown strained GaxIn1−xAs/InP single quantum well structures is experimentally verified by the determination of the effective in‐plane hole masses. The masses are obtained by performing magnetotransport experiments. Mobilities up to 8700 cm2/V s for gallium content of x=0.3 were reached. The effective heavy hole masses of compressively strained GaInAs are drastically reduced compared to bulk material in excellent agreement to calculations using the k⋅p‐perturbation theory, whereas the masses of the uppermost valence band of tensile strained material appear to be rather high. Consequently, no experimental determination was possible in the latter case. A precise analysis of the Shubnikov–de Haas oscillation patterns of compressively strained quantum wells shows a spin splitting of the uppermost heavy hole band, containing two different effective masses. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ey III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Effect of anion vacancy on the chromacity of luminescence for Sr(S,Se):Ce,Cl thin film electroluminescent devices

H. Yang, Y. K. Park, S. H. Ju, and B. H. Chang

Appl. Phys. Lett. 67, 70 (1995); http://dx.doi.org/10.1063/1.115510 (3 pages) | Cited 1 time

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We report the luminescence characteristics of Sr(S,Se):Ce,Cl thin film electroluminescent devices, fabricated by co‐evaporation of SrS:Ce,Cl pellet and elemental Se. From the electroluminescence spectra measurements for varied S:Se mole ratio and temperature, it is found that the relative intensity of green emission band to blue emission band decreases with increasing lattice constant of the host lattice. This can be qualitatively accounted for as being caused by a nonradiative energy transfer from the emission band of Ce3+ to the absorption band due to defects associated with anion vacancies in the host lattice. © 1995 American Institute of Physics.
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78.60.Fi Electroluminescence
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.66.Li Other semiconductors
61.72.J- Point defects and defect clusters

Deep‐oxide curved resonator for low‐threshold AlGaAs–GaAs quantum well heterostructure ring lasers

M. R. Krames, A. D. Minervini, and N. Holonyak

Appl. Phys. Lett. 67, 73 (1995); http://dx.doi.org/10.1063/1.115511 (3 pages) | Cited 9 times

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Data are presented on curved‐resonator AlGaAs–GaAs quantum well heterostructure laser diodes employing a deep‐oxide guiding structure formed by a combination of impurity‐induced layer disordering and native oxidation. Room‐temperature, continuous wave (cw) threshold currents as low as ∼13 mA are measured for a ∼5 μm wide, 100 μm radius half‐ring laser employing a deep‐oxide structure. For similar 150 μm radius devices, cw threshold currents as low as ∼19 mA are observed (∼7 μm width), with total output powers exceeding 30 mW. Spectral data indicate single‐mode operation over a large current range (25–100 mA). The low‐threshold characteristics are attributed to the excellent current and optical confinement of the deep‐oxide structure, combined with low edge scattering loss. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.82.Cr Fabrication techniques; lithography, pattern transfer
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
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