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4 Sep 1995

Volume 67, Issue 10, pp. 1343-1491

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The effect of strain on the interdiffusion in InGaAs/GaAs quantum wells

Sang‐Wan Ryu, In Kim, Byung‐Doo Choe, and Weon Guk Jeong

Appl. Phys. Lett. 67, 1417 (1995); http://dx.doi.org/10.1063/1.114512 (3 pages) | Cited 39 times

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The effect of strain on the cation interdiffusion in InGaAs/GaAs quantum wells is described. It is found that the Fick’s diffusion equation does not properly describe the interdiffusion in the heterostructure with strained layers. It is believed that the strain changes crystal defect concentration and thus diffusivity is influenced by strain. Diffusion equation including the strain effect is formulated and solved numerically. The experimental photoluminescence peak shifts as a function of annealing time are well‐fitted by this analysis and useful parameters such as diffusivity describing InGaAs/GaAs quantum well interdiffusion are extracted. © 1995 American Institute of Physics.
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66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation

Experimental investigation of a PtSi source and drain field emission transistor

John P. Snyder, C. R. Helms, and Yoshio Nishi

Appl. Phys. Lett. 67, 1420 (1995); http://dx.doi.org/10.1063/1.114513 (3 pages) | Cited 49 times

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A p‐type PtSi source and drain, no ‘‘gap,’’ metal oxide semiconductor field effect transistor (MOSFET) has been successfully fabricated and experimentally investigated in detail down to 4.2 K. Gate curves (source current versus gate voltage) clearly show that, in the ‘‘on’’ state, the current flow mechanism from the source metal into the channel gradually changes from primarily thermal emission over the small ∼0.2 eV Schottky barrier to holes to completely field emission through the triangular Schottky barrier as the temperature is lowered below ∼100 K. Gate curves for different channel lengths also show minimal short channel effects down to 1.0 μm, in agreement with previous simulations. Drain curves (source current versus drain voltage) demonstrate that the drive current is comparable to that of a conventional MOSFET, and that the Schottky barrier is rendered transparent to the flow of holes when the device is strongly ‘‘on.’’ © 1995 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Phonon‐assisted transmission in resonant interband tunneling devices

Yu. B. Lyanda‐Geller and J.‐P. Leburton

Appl. Phys. Lett. 67, 1423 (1995); http://dx.doi.org/10.1063/1.114514 (3 pages) | Cited 2 times

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We demonstrate that phonon‐assisted transmission may play a considerably lower role in interband tunneling structures than in intraband tunneling based devices as a result of the symmetry difference between electron and hole states. An example of current–voltage characteristics is calculated for resonant interband tunneling structure with confined electron and hole states. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Ferroelectric fatigue in perovskite oxides

W. L. Warren, B. A. Tuttle, and D. Dimos

Appl. Phys. Lett. 67, 1426 (1995); http://dx.doi.org/10.1063/1.114515 (3 pages) | Cited 85 times

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We find that the reduction of the switchable polarization in BaTiO3 crystals via repeated polarization reversals (fatigue) is accompanied by the trapping of electronic charge and atomic scale distortions in the perovskite oxygen octahedron. The distortions are proposed to involve oxygen vacancies. © 1995 American Institute of Physics.
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61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
77.80.Fm Switching phenomena

Two‐dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine‐alane as the aluminum source in low pressure metalorganic chemical vapor deposition

M. Asif Khan, Q. Chen, C. J. Sun, M. Shur, and B. Gelmont

Appl. Phys. Lett. 67, 1429 (1995); http://dx.doi.org/10.1063/1.114516 (3 pages) | Cited 54 times

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In this letter, we report the fabrication of high quality GaN–Al0.1Ga0.9N heterostructures using trimethylamine‐alane as the aluminum source. The two‐dimensional electron gas (2DEG) with mobility values as high as 5000 cm2/V s at 150 K is demonstrated. We also present the results of our calculations of the 2DEG mobility at the GaN–Al0.1Ga0.9N heterointerface. Our calculations show that the mobility enhancement in the 2DEG is related to a much larger volume carrier concentration (compared to bulk GaN) and, therefore, to a larger Fermi energy and to a more effective screening of impurity and piezoelectric scattering. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology

Clean GaP(001)‐(4×2) and H2S‐treated (1×2)S surface structures studied by scanning tunneling microscopy

N. Sanada, M. Shimomura, Y. Fukuda, and T. Sato

Appl. Phys. Lett. 67, 1432 (1995); http://dx.doi.org/10.1063/1.114517 (3 pages) | Cited 13 times

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Clean GaP(001)‐(4×2) and H2S‐treated (1×2) surfaces are studied by scanning tunneling microscopy (STM). We have observed a (4×2)/c(8×2) STM image for the cation‐stabilized GaP(001) surface. The result suggests that the unit cell of the (4×2) structure consists of two Ga dimers with two missing Ga dimers. For the (1×2)S surface, the previous model that sulfur atoms are adsorbed on the Ga dimer and that a missing row of sulfur is formed along the [110] direction is supported by the STM result. © 1995 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)

Ion implantation doping and isolation of GaN

S. J. Pearton, C. B. Vartuli, J. C. Zolper, C. Yuan, and R. A. Stall

Appl. Phys. Lett. 67, 1435 (1995); http://dx.doi.org/10.1063/1.114518 (3 pages) | Cited 79 times

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N‐ and p‐type regions have been produced in GaN using Si+ and Mg+/P+ implantation, respectively, and subsequent annealing at ∼1100 °C. Carrier activation percentages of 93% for Si and 62% for Mg were obtained for implant doses of 5×1014 cm−2 of each element. Conversely, highly resistive regions (≳5×109 Ω/☒) can be produced in initially n‐ or p‐ type GaN by N+ implantation and subsequent annealing at ∼750 °C. The activation energy of the deep states controlling the resistivity of these implant‐isolated materials is in the range 0.8–0.9 eV. These process modules are applicable to the fabrication of a variety of different GaN‐based electronic and photonic devices. © 1995 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
61.80.Jh Ion radiation effects
71.55.Eq III-V semiconductors

Observation of strain effects in semiconductor dots depending on cap layer thickness

M.‐E. Pistol, N. Carlsson, C. Persson, W. Seifert, and L. Samuelson

Appl. Phys. Lett. 67, 1438 (1995); http://dx.doi.org/10.1063/1.114519 (3 pages) | Cited 41 times

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We have investigated the photoluminescence emission energy of InP dots as a function of cap layer thickness. We find a strong blue‐shift with increasing cap layer thickness. The strain tensor in the dot as well as in the surrounding matrix has been modeled using finite element methods and the band gap has been calculated using deformation potential theory. We find good agreement between calculation and experiment. For uncapped dots we find that the emission energy is lower than for biaxially strained InP, and is indeed close to unstrained InP. © 1995 American Institute of Physics.
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71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors

Fabrication and characterization of micromagnet arrays on top of GaAs/AlGaAs heterostructures

P. D. Ye, D. Weiss, K. von Klitzing, K. Eberl, and H. Nickel

Appl. Phys. Lett. 67, 1441 (1995); http://dx.doi.org/10.1063/1.114520 (3 pages) | Cited 24 times

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Using nanolithographic techniques we deposit an array of ferromagnetic dysprosium dots with period a=500 nm on top of GaAs–AlGaAs heterojunctions. The spatially periodic stray fields affect drastically the magnetotransport properties of the electrons in the underlying two‐dimensional electron gas and give rise to the long predicted magnetic commensurability oscillations. We show that such a semiconductor‐ferromagnet hybrid system can be used to study the magnetic properties of nanoscale particles. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Tt Fine-particle systems; nanocrystalline materials

Conduction‐type conversion in Si‐doped (311)A GaAs grown by molecular beam epitaxy

N. Sakamoto, K. Hirakawa, and T. Ikoma

Appl. Phys. Lett. 67, 1444 (1995); http://dx.doi.org/10.1063/1.114521 (3 pages) | Cited 17 times

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We have systematically studied the dependence of the electrical properties of Si‐doped (311)A GaAs on the growth conditions in molecular beam epitaxy and have established a phase diagram for the conduction type as functions of the growth temperature and the V4/III flux ratio. A sharp boundary is observed for the transition between the p‐ and n‐type conduction, on both sides of which the activation efficiency of Si is close to unity. Furthermore, it is found that, in contrast to the case of the (111)A GaAs, the conduction‐type conversion in Si‐doped (311)A GaAs does not show a clear correlation with the macroscopic surface morphology, suggesting that the mechanism for the conduction‐type conversion in Si‐doped (311)A GaAs is different from that for the (111)A orientation. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Ey III-V semiconductors

Donors bound to X valleys in type‐II GaAs–AlAs quantum well structures

Gerald Weber

Appl. Phys. Lett. 67, 1447 (1995); http://dx.doi.org/10.1063/1.114490 (3 pages) | Cited 12 times

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We calculate the binding energies of donors bound to X valleys in type‐II GaAs–AlAs quantum well structures using an anisotropic variational method which enables us to take into account the effective mass anisotropy and quantum confinement. For a comparative study, we use two sets of effective masses obtained from different measurements [B. Rheinänder et al. Phys. Status Solidi B 49, K167 (1972) and M. Goiran et al., Physica B 177, 465 (1992)]. We show that the binding energies have a pronounced dependence with the effective mass, AlAs layer thickness, and impurity position. © 1995 American Institute of Physics.
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71.55.Eq III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Observation of exciton and biexciton processes in CdxZn1−xSe/ZnSe (x=0.2)

Li Wang and Joseph H. Simmons

Appl. Phys. Lett. 67, 1450 (1995); http://dx.doi.org/10.1063/1.114491 (3 pages) | Cited 9 times

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Exciton and biexciton transitions have been observed in low‐temperature (10 K) photoluminescence from CdxZn1−xSe/ZnSe (x=0.2) multiple quantum well samples grown by molecular beam epitaxy. Transient photoluminescence experiments were conducted to study the dynamics of carrier decay associated with these processes. The formation of exciton and biexciton species is confirmed by examining their energy positions, intensity dependence on excitation power density, spectral line shapes, relative decay lifetimes, and polarization dependence. © 1995 American Institute of Physics.
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71.35.-y Excitons and related phenomena
78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors
78.66.Hf II-VI semiconductors

Carbonization‐induced SiC micropipe formation in crystalline Si

R. Scholz, U. Gösele, E. Niemann, and D. Leidich

Appl. Phys. Lett. 67, 1453 (1995); http://dx.doi.org/10.1063/1.114492 (3 pages) | Cited 5 times

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The defect structure of Si substrates at their β‐SiC/Si interfaces generated in a chemical vapor deposition (CVD) process by carbonization with C2H4 has been investigated in detail by transmission electron microscopy (TEM) using differently prepared cross section and planar specimens. A new category of defects of minute size and high area density has been found and identified as SiC micropipes formed by Si outdiffusion and simultaneous ingrowth of SiC. A model of self‐adjusting micropipe formation is proposed. © 1995 American Institute of Physics.
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61.72.Qq Microscopic defects (voids, inclusions, etc.)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Extra interface state generation enhanced by fluorine in tungsten‐polycided metal‐oxide‐semiconductor devices with nitrided oxide gate dielectric

C. W. Chen, Y. K. Fang, G. Y. Lee, J. C. Hsieh, and M. S. Liang

Appl. Phys. Lett. 67, 1456 (1995); http://dx.doi.org/10.1063/1.114493 (3 pages) | Cited 1 time

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Interface state generation in oxynitride gate dielectric devices with tungsten‐polycide (W‐polycide) and polycrystalline silicon (poly‐Si) gate structures were investigated. A significant amount of fluorine‐induced interface states were detected in W‐polycide gate device with nitridation of thermal gate oxide by both the charge pumping technique and capacitance/gate voltage (C/V) measurement. Re‐oxidation of oxynitride gate oxide results in partial annealing of these interface states. A model of the fluorine induced strain gradient between silicon dioxide and silicon (SiO2/Si) interface was proposed to explain the extra interface state generation mechanism. © 1995 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Indium distribution in InGaAs quantum wires observed with the scanning tunneling microscope

M. Pfister, M. B. Johnson, S. F. Alvarado, H. W. M. Salemink, U. Marti, D. Martin, F. Morier‐Genoud, and F. K. Reinhart

Appl. Phys. Lett. 67, 1459 (1995); http://dx.doi.org/10.1063/1.114494 (3 pages) | Cited 36 times

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The incorporation of In in the growth of crescent‐shaped In0.12Ga0.88As quantum wires embedded in (AlAs)4(GaAs)8 superlattice barriers is studied in atomic detail using cross‐sectional scanning tunneling microscopy. It is found that the In distribution in both the surface and the first subsurface layer can be atomically resolved in the empty‐ and filled‐state images, respectively. Strong In segregation is seen at the InGaAs/GaAs interfaces, but neither an expected enhancement of the In concentration at the center of the quantum wire compared to the planar quantum well nor In clustering beyond the statistical expectation is observed. © 1995 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.55.-a Thin film structure and morphology

Radiation processing of Cr‐GaAs contacts

J. Breza, M. Kadlečíková, R. V. Konakova, V. G. Lyapin, V. V. Milenin, V. A. Statov, Yu. A. Tkhorik, and M. Yu. Filatov

Appl. Phys. Lett. 67, 1462 (1995); http://dx.doi.org/10.1063/1.114495 (3 pages) | Cited 1 time

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We report on the influence of 60Co gamma‐radiation upon the properties of Cr‐GaAs diode structures. Auger depth profiling proved that while a low dose of radiation made the transition region wider, higher doses caused its narrowing. Radiation treatment affected the Schottky barrier height and ideality factor favourably. © 1995 American Institute of Physics.
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61.80.Jh Ion radiation effects
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Photoluminescence investigation of Hg acceptor in GaAs

O. Ka and P. J. Fons

Appl. Phys. Lett. 67, 1465 (1995); http://dx.doi.org/10.1063/1.114496 (3 pages) | Cited 1 time

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Photoluminescence spectroscopy has been used to investigate the behavior of Hg, implanted into MBE‐grown GaAs. A new recombination path in the near‐band‐edge region at 1.51291 eV is identified with the neutral Hg‐bound exciton recombination (Hg°X), with a localization energy following an anti‐Haynes’ rule. The electron‐acceptor and donor‐acceptor transitions are displayed at 1.466 and 1.463 eV, respectively. From the temperature dependence of the photoluminescence, the value of 52.5 meV is extracted for the binding energy of the Hg acceptor in GaAs. With the resonant excitation of the Hg°X line, the electronic signature of the Hg acceptor in GaAs is further evidenced, with the observation of two‐hole transitions. Transitions to 2s as well as 3s states are resolved, with Raman shifts of 37.2 and 44.8 meV, respectively. The corresponding binding energies are thus 15.3 and 7.7 meV, respectively. © 1995 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors

Electrochemiluminescence from porous silicon in formic acid liquid‐junction cells

Will H. Green, Eric J. Lee, Jeffrey M. Lauerhaas, Theodore W. Bitner, and Michael J. Sailor

Appl. Phys. Lett. 67, 1468 (1995); http://dx.doi.org/10.1063/1.114497 (3 pages) | Cited 5 times

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Visible light emission from porous silicon can be stimulated by applying a positive bias to a formic acid/sodium formate liquid junction cell. The emission lasts for 45 min at +2.75 V applied potential (<5 mA/cm2, power conversion efficiency ≳10−2%) and is reliably generated from n‐ or p‐type porous silicon. An applied voltage as low as 1.3 V is capable of generating the red (720 nm) emission, indicating that current‐induced chemical reactions aid in the generation of charge carriers. A mechanism involving oxidation of formic acid followed by electron injection from a CO2− radical is proposed. Infrared spectra of the porous silicon surface taken after anodization show formation of a stable silyl‐ester species that is thought to be responsible for the increase in radiative recombination efficiency through passivation of surface defects. © 1995 American Institute of Physics.
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78.60.-b Other luminescence and radiative recombination
82.45.-h Electrochemistry and electrophoresis

Josephson vortex flow in superconducting single‐crystal Bi2Sr2CaCu2Ox

Ji Ung Lee, James E. Nordman, and Gert Hohenwarter

Appl. Phys. Lett. 67, 1471 (1995); http://dx.doi.org/10.1063/1.114498 (3 pages) | Cited 48 times

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Using various size rectangular mesas formed by photolithographically patterning and etching on single‐crystal Bi2Sr2Ca1Cu2Ox superconductors, we have obtained c‐axis volt‐ampere characteristics as a function of magnetic field applied parallel to the a‐b planes. Enhanced sensitivity with field perpendicular to the long side was observed even in mesas with dimensions smaller than the magnetic penetration depth λc. This can be explained in terms of viscous flow of Josephson vortices. The measurements are in good quantitative agreement with theoretical models for Josephson vortex motion in layered superconductors. Vortex flow coexists with the multiple hysteretic structure previously presented as evidence that this material behaves as a stack of underdamped intrinsic Josephson junctions. © 1995 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.72.-h Cuprate superconductors

Low‐frequency noise in low‐Tc multiloop magnetometers with additional positive feedback

Dietmar Drung

Appl. Phys. Lett. 67, 1474 (1995); http://dx.doi.org/10.1063/1.114499 (3 pages) | Cited 17 times

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The low‐frequency noise in multiloop dc superconducting quantum interference device (SQUID) magnetometers fabricated from low‐Tc (transition temperature) materials was investigated. The magnetometers are operated in a flux‐locked loop based on additional positive feedback (APF). A simple noise reduction scheme for dc SQUIDs with APF is presented that eliminates the influence of critical current and resistance fluctuations without deteriorating the white noise performance. Applying this scheme to a magnetometer with a low‐frequency two‐level switching due to a single trap in the SixNy tunnel barrier reduced the switching amplitude of ≂10−3 Φ0 by at least two orders of magnitude down to a level below the intrinsic magnetometer flux noise. Using simple direct‐coupled readout electronics with a 10 kHz bias reversal, a high bandwidth of ≂1 MHz, a low white flux noise of 1.5×10−6 Φ0/√Hz, and a 1/f noise corner frequency of 4 Hz have been measured. © 1995 American Institute of Physics.
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07.55.Ge Magnetometers for magnetic field measurements
74.40.-n Fluctuation phenomena
85.25.Dq Superconducting quantum interference devices (SQUIDs)

Electric field effect on ultrathin YBa2Cu3O7−δ grain boundary Josephson junctions

K. Petersen, I. Takeuchi, V. Talyansky, C. Doughty, X. X. Xi, and T. Venkatesan

Appl. Phys. Lett. 67, 1477 (1995); http://dx.doi.org/10.1063/1.114500 (3 pages) | Cited 6 times

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The effect of electric field on ultrathin YBa2Cu3O7−δ grain boundary Josephson junctions has been investigated. A conventional metal insulator superconductor field effect transistor structure consisting of a Pr0.55Y0.45Ba2Cu3O7−δ /YBa2Cu3O7−δ bilayer channel, a crystalline SrTiO3 dielectric, and an Au gate electrode is deposited on a SrTiO3 bicrystal substrate. At high bias current (Ibias≫Ic) the observed effect is compatible with a parallel resistor model using a value close to the bulk charge carrier density of YBa2Cu3O7−δ. At low bias current (Ibias≥Ic) an enhanced field effect not compatible with a parallel resistor model is observed. This enhanced effect is related to the field dependent dielectric properties of the crystalline SrTiO3 insulation layer. © 1995 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
74.78.-w Superconducting films and low-dimensional structures
74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions

Domain observations of a durability tested TbFeCo magneto‐optical disk using magnetic force microscopy

Atsushi Kikukawa, Hiroyuki Awano, Sumio Hosaka, Yukio Honda, and Ryo Imura

Appl. Phys. Lett. 67, 1480 (1995); http://dx.doi.org/10.1063/1.114501 (3 pages) | Cited 1 time

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Complex magnetic structures were observed on a durability tested TbFeCo magneto‐optical disk. By considering the magnetic properties of the TbFeCo and the polarized microscopic image of the same region, it was concluded that those complex structures result from the decrement of the compensation temperature of the TbFeCo film at the track center. Samples that were exposed to static magnetic fields were also observed for the purpose of inspecting the changes in the coercive force of the damaged regions. © 1995 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
75.50.Bb Fe and its alloys
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.60.Ch Domain walls and domain structure

Generation of picosecond pulses at millimeter wavelengths

C. R. Jones, H. Kosai, J. M. Dutta, M. J. Peters, W. Guo, F. C. De Lucia, S. V. Benson, J. M J. Madey, J. C. Swartz, and B. D. Guenther

Appl. Phys. Lett. 67, 1483 (1995); http://dx.doi.org/10.1063/1.114502 (3 pages) | Cited 1 time

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We report here on an experiment in which picosecond electron pulses, produced by a compact radiation frequency (rf) electron gun, were used to excite a rectangular waveguide, generating 5 ps pulses of radiation with a bandwidth of ∼200 GHz. The interaction of the electron pulses with the waveguide can be modeled quite simply by performing a harmonic expansion of the pulse train produced by the electron gun and employing Poynting’s theorem to compute the power coupled into the modes of the waveguide by each harmonic. The resulting model for the distribution of spectral power yields good agreement with the observed spectrum. © 1995 American Institute of Physics.
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07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
41.60.-m Radiation by moving charges

Electrochemically induced changes in the surface diffusion in polycrystalline platinum electrodes

M. Hidalgo, M. L. Marcos, and J. González Velasco

Appl. Phys. Lett. 67, 1486 (1995); http://dx.doi.org/10.1063/1.114503 (3 pages) | Cited 7 times

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Surface diffusion coefficients, DS, of platinum adatoms were measured in situ on polycrystalline platinum electrodes inmersed in 1 M HClO4, 1 M H3PO4 and 0.5 M H2SO4 electrolytic solutions at different potential values. The change in the DS values observed, as well as the rate of change of DS with the potential value, confirm an adsorbate induced relaxation of Pt electrode surfaces. © 1995 American Institute of Physics.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
82.45.-h Electrochemistry and electrophoresis

Fabrication of large arrays of metallic nanowires on V‐grooved substrates

J. Jorritsma, M. A. M. Gijs, C. Schönenberger, and J. G. H. Stienen

Appl. Phys. Lett. 67, 1489 (1995); http://dx.doi.org/10.1063/1.114504 (3 pages) | Cited 6 times

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Large arrays of Au nanowires down to 50 nm in width are fabricated on V‐grooved InP substrates. Holographic laser interference exposure of photoresist and anisotropic etching are used to pattern the surface of InP(001) substrates into V‐shaped grooves with a 200 nm period. Next, the patterned substrates are covered with a thin Au film, which is subsequently structured into nanowires using a well controlled wet etching process. Initial characterization confirms that the wires are electrically continuous. © 1995 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
85.40.Hp Lithography, masks and pattern transfer
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