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11 Sep 1995

Volume 67, Issue 11, pp. 1501-1630

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Nd3+:ethylene glycol amplifier and its stimulated emission cross section

K. G. Han, H. J. Kong, H. S. Kim, and G. Y. Um

Appl. Phys. Lett. 67, 1501 (1995); http://dx.doi.org/10.1063/1.114472 (2 pages) | Cited 1 time

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We demonstrate that Nd3+:ethylene glycol can be used as an amplifier gain medium for a Nd3+:YLF laser. It has been known that Nd3+:liquid is hard to use as a gain medium due to fluorescence quenching. However, we could use Nd3+:ethylene glycol as a gain medium by using a new amplification system, and we also measured the stimulated emission cross section of Nd3+:ethylene glycol. A maximum gain of ∼2 was obtained in our experimental setup, and the stimulated emission cross section of Nd3+:ethylene glycol was measured to be 1.5(±0.5) ×10−19 cm2. © 1995 American Institute of Physics.
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42.55.Mv Dye lasers
42.60.-v Laser optical systems: design and operation

Injection power and wavelength dependence of an external‐seeded gain‐switched Fabry–Perot laser

Dong‐Sun Seo, Hai‐Feng Liu, Dug Y. Kim, and David D. Sampson

Appl. Phys. Lett. 67, 1503 (1995); http://dx.doi.org/10.1063/1.114473 (3 pages) | Cited 24 times

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We experimentally investigate a gain‐switched Fabry–Perot semiconductor laser externally injection seeded with a narrow linewidth continuous wave laser. We determine the dependence of pulse width, side‐mode suppression ratio, and timing jitter on seeding power and seeding wavelength. As external seeding power is increased up to a certain value, we observe negligible change in pulse width, a linear increase in side‐mode suppression ratio, and a linear decrease in timing jitter. Exceeding a certain value leads to substantial pulse broadening. By tuning the seeding wavelength across a chirped mode of the laser, we observe the lowest timing jitter and the largest side‐mode suppression when the seed wavelength is aligned with the center of the chirped spectrum of a desired mode. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Impedance‐corrected carrier lifetime measurements in semiconductor lasers

G. E. Shtengel, D. A. Ackerman, P. A. Morton, E. J. Flynn, and M. S. Hybertsen

Appl. Phys. Lett. 67, 1506 (1995); http://dx.doi.org/10.1063/1.114474 (3 pages) | Cited 17 times

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Differential carrier lifetime as a function of subthreshold bias current in 1.3 m bulk active lasers is obtained by measurement of small‐signal modulation of amplified spontaneous emission together with careful characterization of frequency‐ and current‐dependent device impedance. The strong influence of rapidly varying device impedance upon these measurements is illustrated. In contrast to other studies, neither saturation of differential lifetime at low currents nor linear dependence of spontaneous emission on carrier density is observed. Recombination parameters, fit from current versus carrier density, along with consistent fits of spontaneous emission versus carrier density, are presented. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Theoretical analysis of optimal conditions in quantum structure semiconductor lasers for low threshold current

Yoshihiro Nambu and Kiyoshi Asakawa

Appl. Phys. Lett. 67, 1509 (1995); http://dx.doi.org/10.1063/1.114475 (3 pages) | Cited 2 times

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Optimal conditions for reducing threshold current are investigated for quantum structure (QS) semiconductor lasers. The filling factor of whole QSs to an active region is introduced. A general procedure is presented for obtaining the relation between the threshold current and filling factor from the relation of gain to injected carrier density of the individual QS. It is shown that there is a filling factor that minimizes the threshold current. From this value, the optimal areal coverage is shown to be about 0.1 for a quantum box and 0.8 for a quantum wire for an ordinary surface emitting laser with a single In0.53Ga0.47As/InP. The effects of various imperfections in actual QSs are also discussed. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Theoretical optical gain in InGaAsP/InP quantum well lasers: Evaluation of different envelope function schemes

A. T. Meney and G. Jones

Appl. Phys. Lett. 67, 1512 (1995); http://dx.doi.org/10.1063/1.114476 (3 pages) | Cited 4 times

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The authors demonstrate that in 1.55 μm InGaAsP/InP quantum well lasers proper inclusion of the conduction‐valence coupling is essential to obtain accurate gain characteristics. It is shown that the orbital character of the confined subbands, and the resulting optical matrix elements, play a dominant role. © 1995 American Institute of Physics.
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84.60.Jt Photoelectric conversion
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Photoluminescence decay dynamics in an InGaN/AlGaN/GaN double‐heterostructure blue‐light‐emitting diode

Georg Mohs, Brian Fluegel, Harald Giessen, Habib Tajalli, Nasser Peyghambarian, Pei‐Chih Chiu, B. Scott Phillips, and Marek Osiński

Appl. Phys. Lett. 67, 1515 (1995); http://dx.doi.org/10.1063/1.114477 (3 pages) | Cited 17 times

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The impurity‐related and band‐to‐band photoluminescence of a commercially available III–N blue‐light‐emitting diode is time‐resolved using femtosecond excitation and streak‐camera detection. Photoluminescence decay times are reported and stimulated band‐to‐band emission is observed. The data are compared to a simple recombination model capable of explaining the measured behavior of the photoluminescence. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors

Blue frequency shift due to external light injection in a distributed‐feedback laser diode

Kyo Inoue

Appl. Phys. Lett. 67, 1518 (1995); http://dx.doi.org/10.1063/1.114478 (3 pages)

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A blue frequency shift in a distributed‐feedback laser diode (DFB‐LD) induced by light injection is described. It is observed in an experiment that the lasing wavelength shifts toward the shorter wavelength and the carrier number increases when external light is injected into a DFB‐LD in a particular condition. An F matrix analysis shows a similar behavior, where spatial distribution of the carrier density induced by the external light is taken into account. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Metastable assisted deposition of TiN films

H. Baránková, L. Bárdoš, and S. Berg

Appl. Phys. Lett. 67, 1521 (1995); http://dx.doi.org/10.1063/1.114479 (3 pages) | Cited 8 times

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An excess heat from an exothermic reaction of metastable Ar (43P0) and Ar (43P2) atoms with N2 molecules at low contents of N2 in Ar was found to be responsible for an enhanced thermionic emission, an enhanced production of Ti target vapor, an increased ionization, and consequently for an enhanced deposition rate of TiN films in the radio frequency hollow cathode plasma jet (RHCPJ). This finding emphasizes favorable geometry of hollow cathodes, as well as an important role of metastables in plasma‐assisted processes. © 1995 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Role of interface in ion mixing induced amorphization in the Ag–Mo system with very positive heat of formation

O. Jin, Z. J. Zhang, and B. X. Liu

Appl. Phys. Lett. 67, 1524 (1995); http://dx.doi.org/10.1063/1.114480 (3 pages) | Cited 18 times

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A free energy diagram of the Ag–Mo system with a very positive heat of formation of +57 kJ/mol was constructed, with special consideration to the interfacial free energy in the multilayered films for ion mixing. It was found that amorphization was possible to achieve within two separate composition ranges toward Ag and Mo ends, respectively, if 12 layers, or about 13% of the interfacial atoms were included in the films. Accordingly, ion mixing of the Ag–Mo multilayered films was conducted at liquid nitrogen temperature by 190 keV xenon ions and the formation of amorphous phases was in good agreement with the calculation. Besides, a new metastable fcc phase was formed and, more interestingly, it transformed into an amorphous state upon aging, which can also be interpreted by a related free energy calculation. © 1995 American Institute of Physics.  
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61.80.Jh Ion radiation effects
81.30.Bx Phase diagrams of metals, alloys, and oxides

Investigation of the interfacial order of nematic liquid crystal on photopolymer coated conducting glass substrates with a scanning tunneling microscope

S. C. Jain, K. Rajesh, S. B. Samanta, and A. V. Narlikar

Appl. Phys. Lett. 67, 1527 (1995); http://dx.doi.org/10.1063/1.114481 (3 pages) | Cited 2 times

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High resolution images of individual molecules of the liquid crystalline material adsorbed on a photopolymer treated transparent conducting (indium oxide coated) glass plate have been obtained with a scanning tunneling microscope (STM). The ultrathin layer of the photopolymer poly‐vinyl‐4‐methoxy‐cinnamate (PVMC) on the conducting glass plate was deposited by the bulk induced alignment technique reported earlier [S. C. Jain and H.‐S. Kitzerow, Appl. Phys. Lett. 64, 2946 (1994)]. The liquid crystal molecules exhibit a positional order, in addition to a high degree of orientational order of the bulk nematic. This surface ordering of the nematic liquid crystal at the polymer interface is quite different from the ordering observed on graphite and molybdenum disulphide substrates. A small ensemble of molecules show antiparallel ordering of the cyano‐phenyl‐cyclo‐hexane molecules in agreement with the calculations of Schadt et al. [Liq. Cryst. 5, 293 (1989)]. © 1995 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
61.30.-v Liquid crystals
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretation

Koenraad G. F. Janssens, Omer Van der Biest, Jan Vanhellemont, Herman E. Maes, and Robert Hull

Appl. Phys. Lett. 67, 1530 (1995); http://dx.doi.org/10.1063/1.114482 (3 pages) | Cited 7 times

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In the present letter electron diffraction contrast imaging (EDCI) computations for strain characterization on the nanometer scale are presented. Using newly developed simulation software for EDCI image interpretation it is demonstrated how the technique can be used in the characterization, with submicron resolution, of localized strain fields in any crystalline material. Strain fields of arbitrary geometrical symmetry can be treated. As a case study, localized strain in an advanced semiconductor laser structure is investigated. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
61.05.J- Electron diffraction and scattering
68.35.Gy Mechanical properties; surface strains
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

X‐ray photoelectron diffraction of (100)‐oriented chemical vapor deposited diamond films on silicon (100)

E. Schaller, O. M. Küttel, P. Aebi, and L. Schlapbach

Appl. Phys. Lett. 67, 1533 (1995); http://dx.doi.org/10.1063/1.114483 (2 pages) | Cited 7 times

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(100)‐oriented diamond films have been grown on silicon (100) in a microwave plasma assisted chemical vapor deposition (CVD) tubular system. X‐ray photoelectron diffraction (XPD) has been used to study such oriented polycrystalline films. Comparing the diffractograms of a natural diamond (100) surface and of polycrystalline (100)‐oriented CVD diamond films quite similar features are observed. XPD measurements after 8 min of bias treatment show that the tiny crystals are already preferentially oriented at deposition parameters required for (100)‐oriented film growth. Our measurements indicate a strong need to control the growth parameters very carefully during the first minutes of growth to get an orientation. © 1995 American Institute of Physics.
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61.05.J- Electron diffraction and scattering
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

One‐dimensional exciton diffusion in GaAs quantum wires

Y. Nagamune, H. Watabe, F. Sogawa, and Y. Arakawa

Appl. Phys. Lett. 67, 1535 (1995); http://dx.doi.org/10.1063/1.114484 (3 pages) | Cited 22 times

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One‐dimensional diffusion of excitons in GaAs quantum wires was observed by using microphotoluminescence measurements at low temperature. The observed diffusion length increased with decreasing wire width from 30 to 15 nm, and decreased from 15 to 7 nm, where maximum diffusion length was about 4 μm for the 15 nm quantum wire, which is the largest value so far reported. It is considered that the change of diffusion length versus wire width is caused by the competition between one‐dimensional character and the interface fluctuation. © 1995 American Institute of Physics.
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71.35.-y Excitons and related phenomena
78.55.Cr III-V semiconductors

Characterization of electron beam induced modification of thermally grown SiO2

J. R. Barnes, A. C. F. Hoole, M. P. Murrell, M. E. Welland, A. N. Broers, J. P. Bourgoin, H. Biebuyck, M. B. Johnson, and B. Michel

Appl. Phys. Lett. 67, 1538 (1995); http://dx.doi.org/10.1063/1.114485 (3 pages) | Cited 8 times

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We used local probe techniques to characterize electron beam (e‐beam) induced changes in thin oxides on silicon. Primary effects of the 1 nm wide, 300 keV e beam included the formation of positive charges trapped in the SiO2, physical restructuring in the oxide, and deposition of carbonaceous compounds. Charges remained stable in thicker oxides (460 nm) and appeared as changes in the contact potential or microwave response with widths down to 100 nm. In thinner oxides (20 nm) the amount of charge was smaller and less stable; below 7 nm no charge was detected. Physical changes in the oxide, evident as a swelling of irradiated areas, accounted for the etching selectivity of these regions. © 1995 American Institute of Physics.
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61.80.Fe Electron and positron radiation effects
73.61.Ng Insulators

Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

D. Kapolnek, X. H. Wu, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, and J. S. Speck

Appl. Phys. Lett. 67, 1541 (1995); http://dx.doi.org/10.1063/1.114486 (3 pages) | Cited 141 times

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The structural evolution of epitaxial GaN layers grown on basal plane sapphire has been studied by atomic force microscopy (AFM), x‐ray diffraction, and transmission electron microscopy (TEM). High‐temperature growth (1050–1080 °C) on optimized nucleation layers leads to clear, specular films. AFM on the as‐grown surface shows evenly spaced monatomic steps indicative of layer by layer growth. AFM measurements show a step termination density of 1.7×108 cm−2 for 5 μm films. This value is in close agreement with TEM measurements of screw and mixed screw‐edge threading dislocation density. The total measured threading dislocation density in the 5 μm films is 7×108 cm−2. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Decomposition and primary crystallization in undercooled Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 melts

R. Busch, S. Schneider, A. Peker, and W. L. Johnson

Appl. Phys. Lett. 67, 1544 (1995); http://dx.doi.org/10.1063/1.114487 (3 pages) | Cited 147 times

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Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 bulk metallic glasses were prepared by cooling the melt with a rate of about 10 K/s and investigated with respect to their chemical and structural homogeneity by atom probe field ion microscopy and transmission electron microscopy. The measurements on these slowly cooled samples reveal that the alloy exhibits phase separation in the undercooled liquid state. Significant composition fluctuations are found in the Be and Zr concentration but not in the Ti, Cu, and Ni concentration. The decomposed microstructure is compared with the microstructure obtained upon primary crystallization, suggesting that the nucleation during primary crystallization of this bulk glass former is triggered by the preceding diffusion controlled decomposition in the undercooled liquid state. © 1995 American Institute of Physics.
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64.70.-p Specific phase transitions
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Amorphous Ni50Nb50/C multilayers for soft x rays made by pulsed laser deposition

Satish Vitta, T. H. Metzger, H. Mai, and J. Peisl

Appl. Phys. Lett. 67, 1547 (1995); http://dx.doi.org/10.1063/1.114488 (2 pages)

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Amorphous Ni50Nb50/C multilayers with a repeat period of 2.39 nm, suitable for the water window region of soft x rays, have been prepared by pulsed laser deposition. The interface and in‐plane structure of these multilayers was studied by low angle hard x‐ray diffraction. It was found that the interfaces are very sharp with a typical lateral correlation length of the order of 180 nm. © 1995 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Jg Amorphous semiconductors; glasses
81.15.Fg Pulsed laser ablation deposition

High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition

R. D. Vispute, Hong Wu, and J. Narayan

Appl. Phys. Lett. 67, 1549 (1995); http://dx.doi.org/10.1063/1.114489 (3 pages) | Cited 76 times

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We have grown high quality epitaxial AlN layers on sapphire substrates by pulsed laser ablation of a stoichiometric AlN target. The AlN films deposited at 800 °C and laser energy densities in the range of 2–3 J/cm2 were found to be epitaxial with the c axis normal to the Al2O3(0001) surface. The x‐ray rocking curve of epitaxial AlN films yielded a full width at half maximum of 0.21°. The selected area electron diffraction patterns and high resolution transmission electron microscopy also revealed that the films were epitaxial with an orientational relationship of AlN[0001]∥Al2O3[0001] and in‐plain alignment of AlN[1210]∥Al2O3[0110] and AlN[1010]∥Al2O3[2110]. This is equivalent to 30° rotation in the basal plane of the AlN film with respect to the sapphire substrate. The absorption edge measured by ultraviolet‐visible spectroscopy for the epitaxial AlN film was sharp and the band gap was found to be 6.1 eV. The electrical resistivity of the films was about 5–6×1013 ohm cm with a breakdown field of 5×106 V/cm. At higher laser energy densities ≥10 J/cm2 and lower temperatures ≤650 °C, the deposited films were nitrogen deficient and contained free metallic aluminum, both of which degrade the microstructural, electrical, and optical properties of the AlN films. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition

Fabrication of nanostructures using atomic‐force‐microscope‐based lithography

L. L. Sohn and R. L. Willett

Appl. Phys. Lett. 67, 1552 (1995); http://dx.doi.org/10.1063/1.114731 (3 pages) | Cited 64 times

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We describe a novel technique for fabricating metallic nanostructures on an arbitrary substrate using an atomic force microscope (AFM). An AFM is used to plow a pattern through the top of two resist layers spun onto a substrate. The resist is then developed to create a mask through which material can be deposited. By changing the applied force, the top resist‐layer thickness, or the development time, the linewidth can be varied. Continuous metallic wires ∼500 Å×400 Å×15 μm have been fabricated on bare substrates and between contact pads. © 1995 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Direct‐current bias effect on the synthesis of (001) textured diamond films on silicon

J. S. Lee, K. S. Liu, and I‐Nan Lin

Appl. Phys. Lett. 67, 1555 (1995); http://dx.doi.org/10.1063/1.114732 (3 pages) | Cited 34 times

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A diamond film consisting of almost 100% [001] grains can be synthesized at a fast rate (∼ 3 μm/h) by a two‐step process. First, the nuclei are formed under −160 V dc bias with 3 mol % CH4/H2 at 900 °C substrate temperature and then the films are grown under −100 V dc bias with around 5–6 mol % CH4/H2 at the same temperature. The nucleation of the diamond is enhanced by using bias voltage. The a and b axis of [001] textured diamond films grown under large bias voltage are aligned with a and b axes of silicon, viz. (100)diamond∥(100)Si and [110]diamond∥[110]Si. The effect of bias voltage on the growth behavior of the diamond films is accounted for by the suppression of the growth of the non‐[001] grains due to the electron emission under bias. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Behavior of intrinsic Si point defects during annealing in vacuum

H.‐J. Gossmann, C. S. Rafferty, F. C. Unterwald, T. Boone, T. K. Mogi, M. O. Thompson, and H. S. Luftman

Appl. Phys. Lett. 67, 1558 (1995); http://dx.doi.org/10.1063/1.114733 (3 pages) | Cited 23 times

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Using B and Sb doped Si(100) doping superlattices (DSL) as tracers of native Si point defect behavior it is shown that vacuum annealing at 810 °C leads to a depletion of Si self‐interstitials, with their smallest concentration at the surface, but does not affect the vacancy population. At a fixed depth, the interstitial concentration drops for increasing annealing times; for a given time, the interstitial concentration increases into the sample as a function of depth. Inert anneals of a B‐DSL in Ar show flat interstitial profiles. Apparently, the vacuum anneal makes the surface a better sink for interstitials than an inert Ar anneal, leading to an equilibrium interstitial concentration below the value in the bulk and establishing a net outflow of interstitials to the surface. The absence of a response of the vacancy population yields a lower limit on the interstitial‐vacancy recombination time of 104 s at 810 °C. Process simulation of this scenario captures the essential trends of the experimental data. © 1995 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
61.72.uf Ge and Si
66.30.J- Diffusion of impurities

A 4.5 kV 6H silicon carbide rectifier

O. Kordina, J. P. Bergman, A. Henry, E. Janzén, S. Savage, J. André, L. P. Ramberg, U. Lindefelt, W. Hermansson, and K. Bergman

Appl. Phys. Lett. 67, 1561 (1995); http://dx.doi.org/10.1063/1.114734 (3 pages) | Cited 66 times

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Reactive ion etched silicon carbide mesa pin diodes with voltage blocking capabilities as high as 4.5 kV have been fabricated from 6H–SiC epitaxial layers. The epitaxial structure was grown by chemical vapor deposition on an n+ substrate giving a low‐doped 45 μm thick n− active base layer and a 1.5 μm thick high‐doped p+ emitter layer on top. A high minority carrier lifetime of 0.43 μs in the n− active base layer provides good on‐state properties with a typical forward voltage drop of 6 V at 100 A/cm2. © 1995 American Institute of Physics.
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73.40.Cg Contact resistance, contact potential
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Kk Junction diodes

Far‐infrared emission from hot quasi‐one‐dimensional quantum wires in GaAs

M. Grayson, D. C. Tsui, M. Shayegan, K. Hirakawa, R. A. Ghanbari, and Henry I. Smith

Appl. Phys. Lett. 67, 1564 (1995); http://dx.doi.org/10.1063/1.114735 (3 pages) | Cited 6 times

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We have observed far‐infrared radiation from an array of hot quasi‐one‐dimensional wires in GaAs. The wires have 6000 Å period with 3000 Å lithographic width. Spectroscopy of the infrared emission with a bolometer detector filtered by a magnetic field‐tunable InSb cyclotron resonance wedge reveals: an intersubband plasmon resonance at 45 cm−1, and a measure of the resonance linewidth and electron temperature as a function of pulse current. The total intensity of the infrared signal yields a confirming measure of the temperature of the electrons, ranging from 6.0 to 12.1 K for currents of 40 nA to 2 μA per wire. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.30.Fs III-V and II-VI semiconductors
78.60.Kn Thermoluminescence

High quality hydrogenated amorphous germanium prepared by the hot wire technique

L. Zanzig, W. Beyer, and H. Wagner

Appl. Phys. Lett. 67, 1567 (1995); http://dx.doi.org/10.1063/1.114941 (3 pages) | Cited 6 times

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Hydrogenated amorphous germanium films were deposited by thermal dissociation of undiluted germane. The optical and electronic properties of the material were investigated using infrared spectroscopy (IR), photothermal deflection spectroscopy, spectroscopic ellipsometry, and conductivity measurements. The results show that homogeneous material with steep band tails (50 meV) and without any sign of postoxidation can be obtained. A strong correlation between the defect density and the IR Ge–H stretching modes is observed. © 1995 American Institute of Physics.
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73.61.Jc Amorphous semiconductors; glasses
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Are electrical properties of an aluminum–porous silicon junction governed by dangling bonds?

D. Stievenard and D. Deresmes

Appl. Phys. Lett. 67, 1570 (1995); http://dx.doi.org/10.1063/1.114942 (3 pages) | Cited 48 times

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Using an aluminum–porous p+ silicon junction, we have realized a sensor which dc current increases up to two orders of magnitude in the presence of ammonia, as for a series of various gases. To interpret quantitatively this phenomenon, we assume that the conductivity is governed by the width of a channel resulting from the partial depletion of silicon located between two pores. This depleted region is due to the charges trapped on surface states associated with the Si–SiO2 interface where SiO2 is the native silicon oxide. When some gas is adsorbed, mainly on Si–H bonds, we propose there is an electrical screening of the interface states (mainly dangling bonds located in the neighborhood of the Si–H bonds), leading to a decrease of the depleted region, i.e., an increase of the width of the channel and thus an increase of the current. © 1995 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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