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11 Sep 1995

Volume 67, Issue 11, pp. 1501-1630

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Photoluminescence of ordered Ga0.5In0.5P grown by metalorganic vapor phase epitaxy

Jian‐Rong Dong, Zhan‐Guo Wang, Xiang‐Lin Liu, Da‐Cheng Lu, Du Wang, and Xiao‐Hui Wang

Appl. Phys. Lett. 67, 1573 (1995); http://dx.doi.org/10.1063/1.114943 (3 pages) | Cited 7 times

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Optical properties of ordered Ga0.5In0.5P epitaxial layers grown by metalorganic vapor phase epitaxy are investigated by photoluminescence (PL) in a temperature range of 10–200 K using excitation power densities between 0.35 W/cm2 and 20 W/cm2. It is found that the intensity of the highest‐energy PL peak of the ordered Ga0.5In0.5P epilayer decreases first, then increases and finally goes down again with increasing temperature. A model of ordered Ga0.5In0.5P epitaxial layers is proposed, in which the ordered Ga0.5In0.5P epilayer is regarded as a type‐II quantum well structure with band‐tail states, and the dependence of PL spectra on the temperature and excitation intensity is reasonably explained. © 1995 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

In situ observation of indium segregation by reflectance difference spectroscopy in single monolayer heterostructures grown by atomic layer epitaxy

R. Arès, C. A. Tran, and S. P. Watkins

Appl. Phys. Lett. 67, 1576 (1995); http://dx.doi.org/10.1063/1.114944 (3 pages) | Cited 12 times

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Single monolayers of InAs in GaAs and GaAs in InAs have been grown by atomic layer epitaxy (ALE) at 50 Torr. In situ reflectance difference spectroscopy monitoring of the surface during each stage of the growth showed a strong asymmetry in the surface behavior between the two systems. Following insertion of an InAs monolayer in GaAs, approximately 20 ML of GaAs are required to recover an In‐free, As‐stabilized GaAs surface at 390 °C. On the other hand, following the insertion of 1 ML of GaAs in InAs, the spectrum returns to a Ga‐free, As‐stabilized InAs surface after only 1 ML of InAs deposition. This behavior shows clear evidence of the presence of segregation caused by thermodynamic factors even at the very low growth temperatures used for ALE. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology

In‐plane‐gate transistors fabricated from Si/SiGe heterostructures by focused ion beam implantation

D. Többen, D. K. de Vries, A. D. Wieck, M. Holzmann, G. Abstreiter, and F. Schäffler

Appl. Phys. Lett. 67, 1579 (1995); http://dx.doi.org/10.1063/1.114945 (3 pages) | Cited 10 times

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One‐dimensional in‐plane‐gate (IPG) transistors in the Si/Ge system are fabricated and characterized by focused ion implantation of Ga+ ions on lines into high‐mobility two‐dimensional electron gases confined in Si/SiGe heterostructures. Transistor operation is demonstrated up to temperatures of T=77 K. The depletion length of the FIB written lines and the saturation drift velocity of the electrons in the Si layer under tensile strain can be estimated from series of samples with different geometric widths of the channel. The IPG transistors presented here are the first based on Si, pushing this elegant transistor concept towards the important Si technology. © 1995 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Fq High-field and nonlinear effects
85.30.Tv Field effect devices

Noncontact photothermal infrared radiometric deep‐level transient spectroscopy of GaAs wafers

A. Mandelis, R. A. Budiman, M. Vargas, and D. Wolff

Appl. Phys. Lett. 67, 1582 (1995); http://dx.doi.org/10.1063/1.114946 (3 pages) | Cited 5 times

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A novel infrared photothermal radiometric deep‐level transient spectroscopy (PTR‐DLTS) has been developed for semiconductor noncontact characterization and applied to GaAs wafer diagnostics. The technique is based on rate‐window detection combined with wafer temperature ramping. Unlike other deep‐level methodologies, PTR‐DLTS should be easily implemented remotely for on‐line or off‐line impurity/electronic defect diagnostics and enjoys high spectral peak separation and spatial resolution limited only by the pump laser beam focus (≥1 μm). The impurity level in a Cr‐compensated semi‐insulating GaAs wafer has been detected at ∼375 K using the 514 nm line of an Ar+ laser. A Te‐doped GaAs sample exhibited behavior consistent with photoinjected carrier lifetime enhancement due to surface state (trap) thermal filling at elevated temperatures. © 1995 American Institute of Physics.
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71.55.Eq III-V semiconductors

Porous Si anisotropy from photoluminescence polarization

D. Kovalev, M. Ben Chorin, J. Diener, F. Koch, Al. L. Efros, M. Rosen, N. A. Gippius, and S. G. Tikhodeev

Appl. Phys. Lett. 67, 1585 (1995); http://dx.doi.org/10.1063/1.114947 (3 pages) | Cited 55 times

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We report the observation of the anisotropic linear polarization of porous Si photoluminescence measured in two excitation geometries. In the normal excitation geometry (exciting beam normal to the sample (100) surface) linear luminescence polarization of as much as 20% is seen parallel to the excitation polarization. In the edge excitation geometry (exciting light incident on a cleaved edge of the sample) the luminescence polarization is aligned mainly in the [100] direction (normal to the surface). The effect is described within the framework of a dielectric model in which porous Si is considered as an aggregate of slightly deformed, elongated and flattened, dielectric elliptical Si nanocrystals with preferred orientation in the [100] direction. © 1995 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors

Polycrystalline GaInAs/AlInAs films for photoconductive detectors

C. E. C. Wood, W. J. Johnson, P. S. Cho, and C. H. Lee

Appl. Phys. Lett. 67, 1588 (1995); http://dx.doi.org/10.1063/1.114948 (3 pages)

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We show that thin Al0.48In0.52As layers in Ga0.47In0.53As alloy films, can be used to trap free carriers, and produce high resistivity materials suitable for 1.55 μm photoconductive detectors. © 1995 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
78.66.Fd III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Microstructure of heteroepitaxial CdTe grown on misoriented Si(001) substrates

David J. Smith, S.‐C. Y. Tsen, Y. P. Chen, J.‐P. Faurie, and S. Sivananthan

Appl. Phys. Lett. 67, 1591 (1995); http://dx.doi.org/10.1063/1.114949 (3 pages) | Cited 25 times

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Transmission electron microscopy has been used to characterize the microstructure of heteroepitaxial CdTe (111) layers grown by molecular beam epitaxy directly on nominal and misoriented Si(001) substrates. High‐resolution electron micrographs showing atomic‐scale details of the CdTe (111)/Si(001) interface have been recorded. Layer quality depended on the substrate tilt parameters, including the offcut orientation angle θ, and the azimuthal angle ϕ relative to [110]. Small ϕ values (4° and 10°) gave high densities of stacking fault twins throughout the epilayer whereas larger misorientation angles led to a rapid falloff away from the substrate. Under optimized growth conditions, the occurrence of twins effectively dropped to zero within a distance of less than 2.5 μm from the substrate surface. © 1995 American Institute of Physics.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Quantum well intersubband heterodyne infrared detection up to 82 GHz

H. C. Liu, Jianmeng Li, E. R. Brown, K. A. McIntosh, K. B. Nichols, and M. J. Manfra

Appl. Phys. Lett. 67, 1594 (1995); http://dx.doi.org/10.1063/1.114950 (3 pages) | Cited 35 times

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We demonstrate the heterodyne detection of two CO2 laser signals offset in frequency up to 82.16 GHz using a multiple quantum well intersubband infrared photodetector. The high frequency is reached by down conversion using the detector itself as a microwave or millimeter‐wave mixer. © 1995 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

In situ x‐ray diffraction study of the role of annealing ambient in epitaxial CoSi2 growth from Co/Ti bilayers on Si(001)

T. I. Selinder, D. J. Miller, and K. E. Gray

Appl. Phys. Lett. 67, 1597 (1995); http://dx.doi.org/10.1063/1.114951 (3 pages) | Cited 16 times

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The reactions during annealing of a Co/Ti bilayer structure on Si(001) were studied in situ to reveal the roles of the Ti interlayer and the annealing ambient on the formation of epitaxial CoSi2. We shown that an oxygen contaminant in the nitrogen annealing gas is needed to form a stable, Co–Ti–O (spinel) membrane at the metal/Si interface that limits diffusion and is crucial for the perfection of epitaxial CoSi2. Annealing in vacuum or otherwise inert environments led to polycrystalline CoSi2 films and no spinel phase. © 1995 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Effect of incorporated nitrogen on the kinetics of thin rapid thermal N2O oxides

M. L. Green, D. Brasen, L. C. Feldman, W. Lennard, and H.‐T. Tang

Appl. Phys. Lett. 67, 1600 (1995); http://dx.doi.org/10.1063/1.114952 (3 pages) | Cited 17 times

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We have grown ∼10 nm O2 and N2O‐oxides on Si(100) by RTO (rapid thermal oxidation) over the temperature range 800–1200 °C. Although the growth rates of both oxides exhibit Arrhenius behavior over the entire temperature range, the N2O‐oxides exhibit a large change in the Arrhenius preexponential factor for oxidation temperatures greater than 1000 °C. Above this temperature, N2O‐oxides grow a factor of 5 slower than O2 oxides. Below this temperature, N2O‐oxide growth rates approach those of O2‐oxides. This growth rate inflection can be explained in terms of N incorporation, which increases with increasing oxidation temperature. The equivalent of one monolayer of N coverage is achieved at about 1000 °C, coincident with the inflection. The incorporated N retards the linear growth of the thin N2O‐oxides either by occupying oxidation reaction sites or inhibiting transport of oxidant species to the vicinity of the interface. © 1995 American Institute of Physics.  
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.65.-b Surface treatments

Persistent photoconductivity and electron density dependent magnetotransport measurements in narrow InGaAs/InP quantum wells

S. Müller, J. Pillath, W. Bauhofer, A. Kohl, and K. Heime

Appl. Phys. Lett. 67, 1603 (1995); http://dx.doi.org/10.1063/1.114953 (3 pages) | Cited 7 times

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We have observed a significant persistent photoconductivity effect in narrow InGaAs/InP quantum wells grown by metalorganic vapor phase epitaxy. This effect enables a detailed study of transport parameters as a function of the electron density. In this way, the interface roughness scattering can be separated from the strongly density dependent Coulomb scattering. For different preparation conditions, we find a strong correlation between the amount of interface roughness scattering and structural data of the interface. The ratio of quantum to classical scattering times remains ≪1 even in the case when Coulomb scattering is not the predominant scattering mechanism. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.-h Electronic transport phenomena in thin films

High‐resolution temperature measurement of void dynamics induced by electromigration in aluminum metallization

Seiichi Kondo and Kenji Hinode

Appl. Phys. Lett. 67, 1606 (1995); http://dx.doi.org/10.1063/1.114954 (3 pages) | Cited 10 times

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The local temperature of aluminum metallization is measured directly during electromigration. High resolution thermography is used to detect void dynamics induced by a dc current. In the vicinity of the growing area, infrared radiation pulses less than 0.5 s wide are observed concomitant with resistance pulses. Their amplitudes are found to correspond to a temperature increase of more than 200 °C, which locally exceeds the melting point of aluminum metallization. These pulses occur as a consequence of void movement. Healing of voids is discussed along with the results. © 1995 American Institute of Physics.
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66.30.Qa Electromigration

Influence of interace and buffer layer on the structure of InAs/GaSb superlattices

M. E. Twigg, B. R. Bennett, and B. V. Shanabrook

Appl. Phys. Lett. 67, 1609 (1995); http://dx.doi.org/10.1063/1.114955 (3 pages) | Cited 8 times

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Using image processing algorithms based on nonlinear imaging theory, we have analyzed high‐resolution transmission electron microscopy images of InAs/GaSb superlattices (SLs) grown by molecular beam epitaxy. Our analysis indicates that InSb‐like interfaces have a roughness of 1 monolayer (ML), for a SL grown on a GaSb buffer layer. For GaAs‐like interfaces, however, the interface roughness is found to be 2 MLs when the SL is grown on a GaSb buffer. For SLs grown on an InAs buffer, the roughness of GaAs‐like interfaces (3 MLs) is also greater than that of InSb‐like interfaces (2MLs). These results suggest two general observations. The first is that GaAs‐like interfaces are rougher than InSb‐like interfaces. This difference may be due to the high surface energy of GaAs as compared to InSb. The second observation is that interface roughness is greater for an InAs/GaSb SL grown on an InAs buffer layer than for the same SL grown on a GaSb buffer layer. This difference in interface roughness may be due to InAs SL layers being in tension when grown on a GaSb buffer layer, whereas GaSb SL layers are under compression when grown on an InAs buffer layer. © 1995 American Institute of Physics.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Influence of the process environment on the thermal intermixing of GaAs/AlAs/AlGaAs double barrier quantum wells

R. K. Kupka and Y. Chen

Appl. Phys. Lett. 67, 1612 (1995); http://dx.doi.org/10.1063/1.114956 (3 pages) | Cited 2 times

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The influence of the process environment on thermally induced intermixing of GaAs/AlAs/AlGaAs double barrier quantum wells is investigated by effecting different low energy reactive ion etch (RIE) surface treatments and then depositing PECVD/sputtered cap layers prior to annealing. We observe photoluminescence blue shifts, small red shifts and total intermixing, dependent on the actual combination of cap material and RIE treatment. The results indicate that the RIE surface damage is an important factor for the onset of the intermixing process and that PECVD processes may require a few monolayers thick surface disordering in order to trigger off the quantum well intermixing, even using SiO2 cap layers. © 1995 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.80.Jh Ion radiation effects
78.66.Fd III-V semiconductors
81.65.-b Surface treatments

Effects of degraded edges in strips of high‐temperature superconducting films at microwave frequencies

S. Gevorgian, E. Carlsson, and E. Olsson

Appl. Phys. Lett. 67, 1615 (1995); http://dx.doi.org/10.1063/1.114957 (3 pages) | Cited 5 times

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A simple model is proposed to analyze microwave properties of thin superconducting strips with degraded edge regions. A high resistance edge is assumed in the superconducting strip. It is shown that with increased temperature more current will flow inside the superconducting strip away from the damaged edge resulting in a reduction of effective surface resistance. © 1995 American Institute of Physics.
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74.25.N- Response to electromagnetic fields
74.78.-w Superconducting films and low-dimensional structures

Phase locking in a multijunction superconducting loop

M. Darula, S. Beuven, M. Siegel, A. Darulova, and P. Seidel

Appl. Phys. Lett. 67, 1618 (1995); http://dx.doi.org/10.1063/1.114958 (3 pages) | Cited 17 times

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Mutual phase locking of Josephson junctions in a multijunction superconducting loop (MSL) was investigated both theoretically and experimentally. The theoretical analysis predicts the existence of phase‐locked states, where the circulating current in the loop serves for phase locking between junctions. The basic operating principles of a MSL were studied experimentally using high‐TC bicrystal Josephson junctions. The enhancement of phase locking stability with respect to series arrays is reported. © 1995 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.Dq Superconducting quantum interference devices (SQUIDs)

Structure and magnetocrystalline anisotropy of R2Fe17−xGax compounds with higher Ga concentration

Bao‐gen Shen, Zhao‐hua Cheng, Bing Liang, Hui‐qun Guo, Jun‐xian Zhang, Hua‐yang Gong, Fang‐wei Wang, Qi‐wei Yan, and Wen‐shan Zhan

Appl. Phys. Lett. 67, 1621 (1995); http://dx.doi.org/10.1063/1.114959 (3 pages) | Cited 46 times

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The effect of Ga substitution for Fe in R2Fe17 (R=Y, Sm, Gd, Tb, Dy, Ho, Er, and Tm) compounds on the structure and magnetocrystalline anisotropy has been studied by means of x‐ray diffraction and magnetization measurements. Both iron sublattice anisotropy and rare earth sublattice anisotropy are found to be modified by the introduction of the gallium atoms. A uniaxial anisotropy is shown in R2Fe17−xGax (for R=Y, Gd, Tb, Dy, Ho, Er, and Tm) compounds with high Ga concentration, whereas a reversal change in the easy magnetization direction is observed in the samples for R=Sm. The contributions to the uniaxial orientation of the magnetization in these compounds result from not only the rare earth sublattice, but also the iron sublattice. © 1995 American Institute of Physics.
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75.30.Cr Saturation moments and magnetic susceptibilities
75.30.Gw Magnetic anisotropy
75.50.Bb Fe and its alloys

Synthesis of aluminum oxide thin films: Use of aluminum tris‐dipivaloylmethanate as a new low pressure metal organic chemical vapor deposition precursor

E. Ciliberto, I. Fragalà, R. Rizza, G. Spoto, and G. C. Allen

Appl. Phys. Lett. 67, 1624 (1995); http://dx.doi.org/10.1063/1.114960 (3 pages) | Cited 5 times

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Amorphous aluminum oxide thin films have been produced with low pressure metal organic chemical vapor deposition technique using the aluminum tris‐dipivaloylmethanate volatile precursor. Different carrier gases were used for the depositions. The surfaces of the films were analyzed using x‐ray photoelectron spectroscopy and secondary ion mass spectrometry. A very low content of carbon was verified when oxygen and water vapor saturated argon were used as carrier gases. A higher hydration percentage of the deposited material was verified when water vapor was present during the deposition process. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Synthesis of fullerenes from diamond

Yositaka Yosida

Appl. Phys. Lett. 67, 1627 (1995); http://dx.doi.org/10.1063/1.115020 (3 pages) | Cited 4 times

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Synthesis of fullerenes using a standard dc arc evaporation of composite graphite anode containing 0–100 wt % of diamond is reported. The benzene soluble material‐to‐soot weight ratio W increases linearly with increasing diamond composition CD up to 45 wt %. At 50 wt %, W is 1.86 times as large as that for pure graphite. Above 50 wt %, W turns to decrease linearly. It is shown that diamond and graphite contribute independently to W. The graphite contribution to the linear behaviors is discussed in terms of kinetics of the transformation from planar sp2 network to quasitetragonal sp3 hybridization through quasiplanar sp2 hybridization during the dc arc. Furthermore, a new type of encapsulation compound, single crystals of diamond encapsulated in multiwalled carbon nanocages, is presented. © 1995 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
FREE

Erratum: ‘‘Ferroelectric thin films with polarization gradients normal to the growth surface’’ [Appl. Phys. Lett. 67, 721 (1995)]

Joseph V. Mantese, Norman W. Schubring, Adolph L. Micheli, and Antonio B. Catalan

Appl. Phys. Lett. 67, 1630 (1995); http://dx.doi.org/10.1063/1.115552 (1 page)

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Abstract Unavailable
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
99.10.Cd Errata
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