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Applied Physics Letters / Volume 67 / Issue 12

Appl. Phys. Lett. 67, 1745 (1995); http://dx.doi.org/10.1063/1.115036 (3 pages)

Growth of AlxGa1−xN:Ge on sapphire and silicon substrates

X. Zhang, P. Kung, A. Saxler, D. Walker, T. C. Wang, and M. Razeghi

Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208

(Received 5 May 1995; accepted 14 July 1995)

AlxGa1−xN were grown on (00.1) sapphire and (111) silicon substrates in the whole composition range (0≤x≤1). The high optical quality of the epilayers was assessed by room‐temperature optical absorption and photoluminescence measurements. Layers with higher Al composition are more resistive. Resistive AlxGa1−xN epilayers were successfully doped with Ge and free‐electron concentration as high as 3×1019 cm−3 was achieved. © 1995 American Institute of Physics.

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KEYWORDS and PACS

Keywords

ABSORPTION SPECTRA, ALUMINIUM NITRIDES, CARRIER DENSITY, CRYSTAL DOPING, CVD, DOPED MATERIALS, GALLIUM NITRIDES, GERMANIUM ADDITIONS, PHOTOLUMINESCENCE

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.115036

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    S. Yoshida, S. Misawa, and S. Gonda, J. Appl. Phys. 53, 6844 (1982)JAPIAU000053000010006844000001.

    C. J. Sun and M. Razeghi, Appl. Phys. Lett. 63, 973 (1993)APPLAB000063000007000973000001.

    A. Saxler, P. Kung, C. J. Sun, E. Bigan, and M. Razeghi, Appl. Phys. Lett. 64, 339 (1994)APPLAB000064000003000339000001.

    P. Kung, A. Saxler, X. Zhang, D. Walker, T. C. Wang, I. Ferguson, and M. Razeghi, Appl. Phys. Lett. 66, 2958 (1995)APPLAB000066000022002958000001.

    Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatsu, N. Sawaki, and I. Akasaki, J. Appl. Phys. 61, 4540 (1987)JAPIAU000061000009004540000001.


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