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2 Oct 1995

Volume 67, Issue 14, pp. 1957-2099

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Self‐organized light‐induced scattering in periodically poled lithium niobate

V. Pruneri, P. G. Kazansky, J. Webjörn, P. St. J. Russell, and D. C. Hanna

Appl. Phys. Lett. 67, 1957 (1995); http://dx.doi.org/10.1063/1.114578 (3 pages) | Cited 11 times

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A new species of self‐organized light‐induced scattering, appearing only in bulk periodically poled lithium niobate, is reported. Clearly defined diffracted beams develop on exposure to 532 nm light from a frequency‐doubled, Q‐switched, and mode‐locked Nd:YAG laser. The structure thus created also diffracts light at 1064 nm. The effect is strongly dependent on temperature, the polarization state of the light, and the period of domain reversal. It exhibits a sharply defined nonlinear threshold at which the far‐field pattern of the diffracted light evolves rapidly. © 1995 American Institute of Physics.
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42.25.Fx Diffraction and scattering
42.65.-k Nonlinear optics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Time domain terahertz impulse ranging studies

R. A. Cheville and D. Grischkowsky

Appl. Phys. Lett. 67, 1960 (1995); http://dx.doi.org/10.1063/1.114579 (3 pages) | Cited 49 times

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We present time domain impulse scattering measurements of freely propagating terahertz radiation measured with subpicosecond resolution. This fast time response corresponds to a usable bandwidth of over 1 THz. Measured scattered fields from thin wire targets agree well with the calculated scattering for the early and late time response in both the time and frequency domains. Realistic ranging from scale model aircraft is demonstrated. © 1995 American Institute of Physics.
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07.07.-a General equipment
07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment

Infrared multiwavelength laser system for establishing a surgical delivery path through water

H. Pratisto, M. Ith, M. Frenz, and H. P. Weber

Appl. Phys. Lett. 67, 1963 (1995); http://dx.doi.org/10.1063/1.114580 (3 pages) | Cited 18 times

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A multiwavelength laser system designed for precise and efficient tissue ablation under water was realized by simultaneously coupling radiation of a holmium:YAG laser, emitting at a wavelength of 2.12 μm and an erbium: YSGG laser at 2.79 μm into the same zirconium fluoride (ZrF4) fiber. The beam paths of the two lasers were collinearly combined taking advantage of the dispersion of an Infrasil prism. Fast video flash photographs and laser induced pressure transients simultaneously recorded with a PVDF pressure transducer were used to study the dynamics of bubble formation at the submerged fiber tip. The bubble size and the bubble lifetime were determined as a function of the wavelength and the delay time between the two different laser pulses. The results indicate that the combination of 2 and 3 μm radiation takes specific advantage of both wavelengths and strongly enhances the ablation efficiency of tissue under water. © 1995 American Institute of Physics.
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42.60.By Design of specific laser systems
42.62.Be Biological and medical applications
87.80.-y Biophysical techniques (research methods)

Ultrafast absorption in free‐standing porous silicon films

J. C. Owrutsky, J. K. Rice, S. Guha, P. Steiner, and W. Lang

Appl. Phys. Lett. 67, 1966 (1995); http://dx.doi.org/10.1063/1.114755 (3 pages) | Cited 5 times

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Ultrafast absorption studies on free‐standing porous silicon films have been carried out at room temperature to investigate the carrier dynamics and the luminescence mechanism. Ultraviolet and visible excitations were used on an as‐prepared sample and two annealed samples. Transient absorption curves of UV pumped, as‐prepared samples contain a fast decay (τf) of 0.8±0.2 ps and a slower decay of ≳30 ps. τf is found to be shorter for both the 500 °C annealed sample with UV excitation and for the as‐prepared sample with visible excitation. The faster decay rates suggest that the subpicosecond component of the transient absorption may be due to carrier thermalization rather than core‐to‐surface state excitation transfer. © 1995 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.47.-p Spectroscopy of solid state dynamics
78.55.Hx Other solid inorganic materials

Laser‐micromachined millimeter‐wave photonic band‐gap cavity structures

E. Özbay, G. Tuttle, J. S. McCalmont, M. Sigalas, R. Biswas, C. M. Soukoulis, and K. M. Ho

Appl. Phys. Lett. 67, 1969 (1995); http://dx.doi.org/10.1063/1.114756 (3 pages) | Cited 21 times

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We have used laser‐micromachined alumina substrates to build a three‐dimensional photonic band‐gap crystal. The rod‐based structure has a three‐dimensional full photonic band gap between 90 and 100 GHz. The high resistivity of alumina results in a typical attenuation rate of 15 dB per unit cell within the band gap. By removing material, we have built defects which can be used as millimeter‐wave cavity structures. The resulting quality (Q) factors of the millimeter‐wave cavity structures were as high as 1000 with a peak transmission of 10 dB below the incident signal. © 1995 American Institute of Physics.
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42.25.-p Wave optics
42.50.-p Quantum optics
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Polarization device employing the combination effect of double refraction and diffraction

Shangqing Liu, Chengxiang Li, and Yansong Chen

Appl. Phys. Lett. 67, 1972 (1995); http://dx.doi.org/10.1063/1.114757 (3 pages) | Cited 6 times

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Upon the combination of double refraction and diffraction effects, a new kind of polarization device is proposed, which is made of the birefringent plate with the grooves of a sawtooth profile on its surface. This device may separate an incident light beam into two polarized beams spatially with a high extinction ratio and large beam‐splitting angle, moreover it has a sheet form, large aperture, and low cost, thus being suitable for practical use. © 1995 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Fm Reflectors, beam splitters, and deflectors

Fluence dependence of nonlinear optical response of cadmium texaphyrin

Jinhai Si, Yougui Wang, Jiang Zhao, Piexian Ye, Duoyuan Wang, Wenfang Sun, and Shiming Dong

Appl. Phys. Lett. 67, 1975 (1995); http://dx.doi.org/10.1063/1.114758 (3 pages) | Cited 3 times

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Third‐order nonlinear optical response of a cadmium texaphyrin solution at 532 nm was measured using time‐resolved degenerate four‐wave mixing with picosecond pulses. The molecules of cadmium texaphyrin exhibit a large optical nonlinearity, which arises from the excited‐state population. The dynamics of the nonlinear optical response show an evident fluence dependence. The temporal response is characterized by three components, a slower, a faster, and a fastest, which are attributed to populations of the first triplet excited state, the first singlet excited state, and the higher singlet excited state, respectively. © 1995 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Multiple wavelength Fabry–Pérot lasers fabricated by vacancy‐enhanced quantum well disordering

D. Hofstetter, H. P. Zappe, J. E. Epler, and P. Riel

Appl. Phys. Lett. 67, 1978 (1995); http://dx.doi.org/10.1063/1.114759 (3 pages) | Cited 16 times

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Wavelength‐shifted GaAs/AlGaAs Fabry–Pérot ridge waveguide lasers were fabricated by vacancy‐enhanced quantum well disordering using dielectric cap annealing. 500 μm long and 4 μm wide Fabry–Pérot lasers with emission wavelengths selectively shifted by 20 nm were integrated with unshifted lasers on the same chip, characterized and further compared with lasers fabricated from as‐grown material. These investigations showed that the absorption edge of a single‐quantum well double heterostructure can be selectively blueshifted after epitaxial growth without compromising diode laser performance. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Near‐field optoelectronic detector probes based on standard scanning force cantilevers

H. U. Danzebrink, G. Wilkening, and O. Ohlsson

Appl. Phys. Lett. 67, 1981 (1995); http://dx.doi.org/10.1063/1.114760 (3 pages) | Cited 10 times

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Near‐field probes have been developed, based on standard, i.e., commercially available, Si cantilever probes for scanning force microscopy (SFM), which directly convert the optical near‐field signal into an electrical signal using Schottky contacts. With these optoelectronic probes it is possible to realize very compact near‐field microscopes. The probes are inserted into a SFM and measure the topography and the optical near‐field signal simultaneously. The qualitative analysis of the light‐sensitive areas of the probes and the detection of the optical near field is described. Finally, subwavelength resolution is demonstrated when a polished glass surface is investigated. © 1995 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Observation of optically pumped midinfrared intersubband luminescence in a coupled quantum wells structure

Y. Lavon, A. Sa’ar, Z. Moussa, F. H. Julien, and R. Planel

Appl. Phys. Lett. 67, 1984 (1995); http://dx.doi.org/10.1063/1.114761 (3 pages) | Cited 14 times

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We have observed midinfrared emission due to intersubband transitions in a coupled quantum wells structure. The excitation process involves optical pumping of the carriers from the ground subband into the third subband and a generation of a population in the third subband. The luminescence is produced by a radiative transition of the photoexcited carriers from the third to the second subband, followed by a fast relaxation into the ground subband due to a resonance LO‐phonon assisted relaxation process. The emission signal persists from low temperatures up to room temperature with a maximum efficiency at 190 K. © 1995 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Carrier leakage in blue‐green II–VI semiconductor lasers

Maarten Buijs, Khalid Shahzad, Sharon Flamholtz, Kevin Haberern, and Jim Gaines

Appl. Phys. Lett. 67, 1987 (1995); http://dx.doi.org/10.1063/1.114762 (3 pages) | Cited 6 times

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Carrier confinement in blue‐green II–VI semiconductor lasers was investigated. For devices longer than 300 μm an energy barrier of 260–280 meV was found to confine the electrons, the carrier being mainly responsible for leakage, within the active region. Shorter devices show more leakage due to an increased importance of mirror losses which require higher threshold gain. Due to the low conductivity of the p‐type cladding layer there is a sizable contribution of drift to the total leakage current. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
78.66.Hf II-VI semiconductors

Simple four‐domain twisted nematic liquid crystal display

J. Chen, P. J. Bos, D. R. Bryant, D. L. Johnson, S. H. Jamal, and J. R. Kelly

Appl. Phys. Lett. 67, 1990 (1995); http://dx.doi.org/10.1063/1.114763 (3 pages) | Cited 50 times

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A particularly simple four‐domain (4‐D) twisted nematic (TN) liquid crystal display (LCD) device is proposed, which is composed of two left‐handed TN and two right‐handed TN subpixels. One of each pair of same handedness subpixels is rotated 180° with respect to the other, resulting in four domains that spatially average one another optically to provide a wide angle of viewing with no gray scale inversion. The detailed fabrication process is presented for a two step SiOx oblique evaporation technique used to realize this 4‐D TN LCD. A reverse rubbed polyamide fabrication process has also been successfully used and will be presented in the full length article. Here we present the complete viewing angle and contrast ratio data for a simple and successful 4‐D TN LCD cell. © 1995 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Polarizer/analyzer filter for nuclear resonant scattering of synchrotron radiation

T. S. Toellner, E. E. Alp, W. Sturhahn, T. M. Mooney, X. Zhang, M. Ando, Y. Yoda, and S. Kikuta

Appl. Phys. Lett. 67, 1993 (1995); http://dx.doi.org/10.1063/1.114764 (3 pages) | Cited 12 times

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A silicon (840) channel‐cut crystal with a large asymmetry is used to linearly polarize synchrotron radiation generated by an undulator source at the 14.413 keV nuclear resonance of 57Fe. The resulting σ‐polarized radiation is then scattered from an 57Fe foil placed in a magnetic field that effects σ→π polarization conversion within the resonant bandwidth. A second crystal of the same type is placed in a crossed position to suppress the nonresonant radiation while transmitting the π‐polarized resonant radiation. A polarization suppression factor of 6×10−7 has been obtained. The suppression of the nonresonant radiation allowed monitoring the decay of the nuclear levels after 1 ns of their excitation. © 1995 American Institute of Physics.
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07.85.Qe Synchrotron radiation instrumentation
76.80.+y Mössbauer effect; other γ-ray spectroscopy
78.70.Ck X-ray scattering

Formation and electrical properties of heteroepitaxial SrTiO3/SrVO3−x/Si(100) structures

B. K. Moon and H. Ishiwara

Appl. Phys. Lett. 67, 1996 (1995); http://dx.doi.org/10.1063/1.114765 (3 pages) | Cited 9 times

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Heteroepitaxial growth of dielectric SrTiO3(STO)/conductive SrVO3−x(SVO)/Si(100) structures was realized using a focused electron beam evaporation method. It was found from x‐ray diffraction analysis and pole figure measurement that the epitaxial relationships were (100)STO ∥(100)SVO∥(100)Si and 〈011〉STO∥〈011〉SVO∥〈001〉Si. It was also observed from depth profiling by secondary ion mass spectrometry that the interdiffusion of constituent elements among the films and Si substrate was not significant. Electrical properties of the STO film were characterized through I–V (current–voltage) and C–V (capacitance–voltage) measurements, after depositing Al electrodes on the STO/SVO/Si structure. The best values of breakdown field, resistivity, and dielectric constant were 345 kV/cm, 6.4×1012 Ω cm, and 243, respectively. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
73.61.Le Other inorganic semiconductors

Complete recrystallization of amorphous silicon carbide layers by ion irradiation

V. Heera, R. Kögler, W. Skorupa, and J. Stoemenos

Appl. Phys. Lett. 67, 1999 (1995); http://dx.doi.org/10.1063/1.114766 (3 pages) | Cited 19 times

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Ion‐beam‐induced recrystallization of amorphous surface layers on single‐crystalline silicon carbide substrates (6H–SiC) has been investigated at temperatures of 500 and 1050 °C by cross‐sectional transmission electron microscopy and Rutherford backscattering spectrometry and channeling. It is shown, that ion irradiation substantially reduces the onset temperature of both the epitaxial layer regrowth and the random nucleation of crystalline grains. Two recrystallization regimes have been found. At 500 °C ion‐beam‐induced random nucleation (IBIRN) of crystalline grains strongly competes with ion‐beam‐induced epitaxial crystallization (IBIEC) and polycrystalline material stops the epitaxial regrowth front in an early stage. At a temperature of 1050 °C IBIEC dominates over IBIRN and a complete, but disturbed epitaxial regrowth is obtained. © 1995 American Institute of Physics.
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61.80.Jh Ion radiation effects
81.15.Np Solid phase epitaxy; growth from solid phases

Rate of consumption of Cu in soldering accompanied by ripening

H. K. Kim and K. N. Tu

Appl. Phys. Lett. 67, 2002 (1995); http://dx.doi.org/10.1063/1.114767 (3 pages) | Cited 56 times

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What is the rate of consumption of Cu in soldering reactions has been a critical question in electronic packaging technology. The Cu films are consumed by Cu–Sn compound formation. Because the Cu thickness is limited and the rework of a solder joint requires a layer of unreacted Cu, the loss of Cu in soldering must be under control. At the solder interface, Cu–Sn intermetallic compounds do not form layered structures. Rather, the Cu6Sn5 phase grows as scalloplike grains into the molten solder and ripening occurs between the grains. Therefore, it has been difficult to determine the compound growth rate, and in turn the Cu consumption rate. Using cross‐sectional and top‐polished samples, we have measured the total volume of Cu–Sn intermetallic compounds formed between eutectic SnPb alloy and Cu substrate as a function of reflow time and temperature. We have deduced that after 1 min reflow, for example, the thickness of Cu consumed was about 0.36, 0.47, and 0.69 μm at 200, 220, and 240 °C, respectively. © 1995 American Institute of Physics.
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81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
85.40.Bh Computer-aided design of microcircuits; layout and modeling

〈111〉 oriented and twin‐free single crystals of Terfenol‐D grown by Czochralski method with cold crucible

Guang‐heng Wu, Xue‐gen Zhao, Jing‐hua Wang, Jing‐yuan Li, Ke‐chang Jia, and Wen‐shan Zhan

Appl. Phys. Lett. 67, 2005 (1995); http://dx.doi.org/10.1063/1.114768 (3 pages) | Cited 37 times

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The growth of twin‐free single crystals of Tb0.3Dy0.7Fe2 with 〈111〉 orientation by the Czochralski method with cold crucible is reported. Various characterizations demonstrated the twin‐free and single‐crystalline quality of the crystals. The optimized growth parameters have been experimentally found to avoid constitutional supercooling. Decanting method was used to provide direct evidence that the unstable growth is the origin of the dendrite growth in this material and made the previous growth of 〈111〉 single crystal a failure. © 1995 American Institute of Physics.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Full strength compacts by extrusion of glassy metal powder at the supercooled liquid state

Yoshihito Kawamura, Hidemi Kato, Akihisa Inoue, and Tsuyoshi Masumoto

Appl. Phys. Lett. 67, 2008 (1995); http://dx.doi.org/10.1063/1.114769 (3 pages) | Cited 94 times

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We report the production of full strength compacts of metallic glass by warm extrusion of powders at the supercooled liquid state just above the glass transition temperature. The alloy used was Zr65Al10Ni10Cu15 (at. %) which has the lowest viscosity among Zr‐based metallic glasses with large supercooled liquid region. The tensile strength and Young’s modulus of the glassy powder compacts were 1520 MPa and 80 GPa, respectively, which are similar to that obtained in the as‐cast bulk alloy and melt‐spun ribbon. This opens up possibilities of producing high strength amorphous alloys with complex shapes. © 1995 American Institute of Physics.
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61.43.Dq Amorphous semiconductors, metals, and alloys
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Effect of methane concentrations on surface morphologies and surface structures of (001) homoepitaxial diamond thin films

Naesung Lee and Andrzej Badzian

Appl. Phys. Lett. 67, 2011 (1995); http://dx.doi.org/10.1063/1.114770 (3 pages) | Cited 15 times

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Homoepitaxial diamond films were grown on misoriented (001) substrates with CH4 concentrations of 1%, 2%, and 6% in H2. Reflection high‐energy electron diffraction was used to characterize the surface structure. At 1% CH4, step‐flow growth occurred with the surface close to the single‐domain structure. This growth mode is expected to produce films with fewer crystal defects. On the other hand, when grown with 2% and 6% CH4, growth hillocks and random growth morphology were observed with the double‐domain surface structure, respectively. The surface morphologies and surface structures are considered to change due to lower mobility and shorter diffusion lengths of adsorbates at higher CH4 concentrations. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Reactive magnetron co‐sputtered antiferroelectric lead zirconate thin films

K. Yamakawa, S. Trolier‐McKinstry, J. P. Dougherty, and S. B. Krupanidhi

Appl. Phys. Lett. 67, 2014 (1995); http://dx.doi.org/10.1063/1.114771 (3 pages) | Cited 55 times

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Antiferroelectric lead zirconate thin films were formed on platinum coated silicon substrates by a reactive magnetron co‐sputtering method. The films showed (240) preferred orientation. The crystallization temperatures and the preferred orientation were affected by the lead content in the films. The electric field forced transformation from the antiferroelectric phase to the ferroelectric phase was observed at room temperature with a maximum polarization value of 36 μC/cm2. The average field to excite the ferroelectric state and that for the reversion to the antiferroelectric state were 267 and 104 kV/cm respectively. © 1995 American Institute of Physics.
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77.55.-g Dielectric thin films
81.15.Cd Deposition by sputtering

Dynamic behavior of cobalt granules with annealing treatment in ion‐beam cosputtered Co22Ag78 granular film

H. Sang, S. Y. Zhang, H. Chen, G. Ni, J. M. Hong, X. N. Zhao, Z. S. Jiang, and Y. W. Du

Appl. Phys. Lett. 67, 2017 (1995); http://dx.doi.org/10.1063/1.114772 (3 pages) | Cited 10 times

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The dynamic behavior of ferromagnetic cobalt granules in ion‐beam cosputtered Co22Ag78 samples under annealing treatment was examined by transmission electron microscopy (TEM), using a real‐time video recording system. Cobalt granules about 10 nm in average size were embedded in a nonmagnetic silver matrix. It was observed that, in situ, the cobalt granules changed continually in shape and size with annealing temperature and time. We have estimated the changes of cobalt granule size from the results of TEM. The ferromagnetic resonance method was employed to study the evolution of the shapes of cobalt granules. It shows that cobalt granule shapes and sizes change mainly along the plane of the film during the process of annealing. © 1995 American Institute of Physics.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
75.50.Cc Other ferromagnetic metals and alloys
81.05.Rm Porous materials; granular materials

Anomalous temperature character of phase conjugation in doped‐LiNbO3 crystal

Jinsong Liu, Changhong Liang, Yuying An, Minghua Li, Yuheng Xu, and Zhongkang Wu

Appl. Phys. Lett. 67, 2020 (1995); http://dx.doi.org/10.1063/1.114773 (2 pages) | Cited 5 times

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We report here an anomaly that the photorefractive phase conjugate reflectivity increases sharply near 55, 70, and 110 °C in three different doped‐LiNbO3 crystals. The anomalous phenomenon is possibly concerned with the structural phase transformation of the crystal, which induces an extra internal electric field and enhances the reflectivity. © 1995 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Recombination in GaAs at the AlAs oxide‐GaAs interface

J. A. Kash, B. Pezeshki, F. Agahi, and N. A. Bojarczuk

Appl. Phys. Lett. 67, 2022 (1995); http://dx.doi.org/10.1063/1.114774 (3 pages) | Cited 13 times

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Interface recombination in GaAs at the GaAs/AlAs interface has been investigated before and after selective ‘‘wet oxidation’’ of the AlAs layer. Time‐resolved photoluminescence of the band‐edge GaAs emission has been used to characterize the interface recombination. Prior to oxidation, the interface recombination is low. After oxidation, the interface recombination has greatly increased, and is comparable to a free GaAs surface in air. However, isolating the GaAs layer from the oxide by a 30 nm layer of Al0.3Ga0.7As allows the interface recombination to remain low after the oxidation. These results help explain the low threshold currents which have been observed in vertical cavity lasers which use wet oxidation of AlAs for current confinement. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
73.20.-r Electron states at surfaces and interfaces
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Transient enhanced diffusion without {311} defects in low energy B+‐implanted silicon

L. H. Zhang, K. S. Jones, P. H. Chi, and D. S. Simons

Appl. Phys. Lett. 67, 2025 (1995); http://dx.doi.org/10.1063/1.114775 (3 pages) | Cited 74 times

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Low energy and low dose B+‐implanted Si has been studied using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS). Czochralski‐grown (100) Si wafers were implanted with 4 keV B+ to a dose of 1×1014/cm2. Subsequently, anneals were performed between 700 and 800 °C for times between 15 s and 8 h in an ambient atmosphere of N2. SIMS results show transient enhanced diffusion (TED) of the boron that saturates in less than 15 min for all annealing temperatures studied. TED results in an increase in the junction depth by at least 60 nm at a 1×1016/cm3 concentration. TEM studies show that, even for the shortest times before TED is observed, {311} defects are not detected. These results imply that there may be more than one source of interstitials for TED. © 1995 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities

Photovoltaic effects in GaN structures with p‐n junctions

X. Zhang, P. Kung, D. Walker, J. Piotrowski, A. Rogalski, A. Saxler, and M. Razeghi

Appl. Phys. Lett. 67, 2028 (1995); http://dx.doi.org/10.1063/1.114776 (3 pages) | Cited 44 times

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Large‐area GaN photovoltaic structures with p‐n junctions have been fabricated using atmospheric pressure metalorganic chemical vapor deposition. The photovoltaic devices typically exhibit selective spectral characteristics with two narrow peaks of opposite polarity. This can be related to p‐n junction connected back‐to‐back with a Schottky barrier. The shape of the spectral characteristic is dependent on the thickness of the n‐ and p‐type regions. The diffusion length of holes in the n‐type GaN region, estimated by theoretical modeling of the spectral response shape, was about 0.1 μm. © 1995 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects
85.60.Gz Photodetectors (including infrared and CCD detectors)
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