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2 Oct 1995

Volume 67, Issue 14, pp. 1957-2099

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Mixed carrier conduction in modulation‐doped field effect transistors

S. E. Schacham, E. J. Haugland, R. A. Mena, and S. A. Alterovitz

Appl. Phys. Lett. 67, 2031 (1995); http://dx.doi.org/10.1063/1.115068 (3 pages)

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The contribution of more than one carrier to the conductivity in modulation‐doped field effect transistors (MODFET) affects the resultant mobility and complicates the characterization of these devices. Mixed conduction arises from the population of several subbands in the two‐dimensional electron gas (2DEG), as well as the presence of a parallel path outside the 2DEG. We characterized GaAs/AlGaAs MODFET structures with both delta and continuous doping in the barrier. Based on simultaneous Hall and conductivity analysis we conclude that the parallel conduction is taking place in the AlGaAs barrier, as indicated by the carrier freezeout and activation energy. Thus, simple Hall analysis of these structures may lead to erroneous conclusions, particularly for real‐life device structures. The distribution of the 2D electrons between the various confined subbands depends on the doping profile. While for a continuously doped barrier the Shubnikov–de Haas analysis shows superposition of two frequencies for concentrations below 1012 cm−2, for a delta doped structure the superposition is absent even at 50% larger concentrations. This result is confirmed by self‐consistent analysis, which indicates that the concentration of the second subband hardly increases. © 1995 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Tv Field effect devices

Lattice damage in III/V compound semiconductors caused by dry etching

M. Heinbach, J. Kaindl, and G. Franz

Appl. Phys. Lett. 67, 2034 (1995); http://dx.doi.org/10.1063/1.115069 (3 pages) | Cited 7 times

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The crystal damage in optoelectronic devices caused by dry etching methods [ion beam etching, reactive ion etching, etching with plasmas excited by electron cyclotron resonance (ECR)] was evaluated. The analytics applied are photoluminescence and Fabry‐Perot damping measurement which were applied to waveguides. A significant improvement is observed using ECR etching as low damage combined with high etching rates is concerned. To evaluate a method as soft or hard etching, Fabry‐Perot damping measurement has emerged to be the most discriminate and decisive tool. © 1995 American Institute of Physics.
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61.80.Jh Ion radiation effects
81.65.-b Surface treatments

Suppression of lateral diffusion of excitons in GaAs quantum wells under perpendicular magnetic fields

Hidefumi Akiyama, Hiroyuki Sakaki, and Toshio Matsusue

Appl. Phys. Lett. 67, 2037 (1995); http://dx.doi.org/10.1063/1.115070 (3 pages) | Cited 1 time

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We have performed lateral diffusion measurements of photo‐excited electron‐hole pairs in a GaAs/AlAs multiple quantum well structure under magnetic fields applied perpendicular to the wells, by using an all‐optical time‐of‐flight technique with a single‐mode optical fiber probe. Remarkable suppression of exciton diffusion is observed, and is ascribed to the magnetic perturbation by which moving excitons are affected proportionally to the square of wave vectors. © 1995 American Institute of Physics.
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71.35.-y Excitons and related phenomena
78.20.Ls Magneto-optical effects
78.47.-p Spectroscopy of solid state dynamics

Thin dielectric degradation during silicon selective epitaxial growth process

Yang‐Chin Shih, Guobiao Zhang, Chenming Hu, and William G. Oldham

Appl. Phys. Lett. 67, 2040 (1995); http://dx.doi.org/10.1063/1.115071 (3 pages) | Cited 4 times

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A fundamental issue in silicon selective epitaxial growth (SEG) processes is the impact of the pre‐epitaxy silicon surface treatments and the SEG ambient on the properties of thin insulating materials exposed to the preclean environment. In this study, we compare pinhole formation in 10–50 nm thermal oxides with more robust oxide/nitride composites of similar thickness. The degradation of thin thermal oxide is attributed to pinhole formation and expansion in the ultrathin oxide layers during ex situ pre‐epi surface treatments, in situ H2 prebake, and selective epitaxial deposition process. The superior resistance of oxide/nitride/oxide (ONO) structures to dielectric degradation may be attributed to the existence of the sandwiched silicon nitride layer which suppresses the mechanism of oxide decomposition during the pre‐epitaxy wet cleaning, and the selective epitaxial growth processes. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology

Raman scattering characterization of the crystalline qualities of ZnSe films grown on S‐passivated GaAs(100) substrates

J. Wang, X. H. Liu, Z. S. Li, R. Z. Su, Z. Ling, W. Z. Cai, X. Y. Hou, and Xun Wang

Appl. Phys. Lett. 67, 2043 (1995); http://dx.doi.org/10.1063/1.115072 (3 pages) | Cited 5 times

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A comparative study of the Raman spectra of ZnSe films grown by molecular beam epitaxy on GaAs(100) substrates passivated by NH4)2)Sx and S2Cl2 solutions is presented. Based on the analysis of the line shape of the first‐order longitudinal‐optical phonon of ZnSe with spatial correlation model of Raman scattering, it is shown that the ZnSe films grown on the GaAs substrates passivated by S2Cl2 solutions have longer coherence lengths, which indicate that their crystalline qualities are better than those passivated by NH4)2Sx solutions. In addition, the barrier heights of ZnSe/GaAs interfaces for different S passivations have been obtained from the ratios of the intensity of the coupled longitudinal‐optical phonon‐plasmon mode to that of the longitudinal‐optical mode of GaAs Raman peak. The results show that the ZnSe/GaAs samples passivated by S2Cl2 solutions have lower density of interfacial states. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.30.Fs III-V and II-VI semiconductors

Sidegating effect improvement of GaAs metal–semiconductor field effect transistor by multiquantum barrier structure

Ching‐Ting Lee, Chang‐Da Tsai, Chi‐Yu Wang, Hung‐Pin Shiao, Tzer‐En Nee, and Jia‐Nan Shen

Appl. Phys. Lett. 67, 2046 (1995); http://dx.doi.org/10.1063/1.115073 (3 pages) | Cited 2 times

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The sidegating effect in a GaAs metal–semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device. © 1995 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices

Core‐level shifts of silicon–hydrogen species on chemically treated Si surfaces studied by high‐resolution x‐ray photoelectron spectroscopy

C. H. Bjorkman, J. L. Alay, H. Nishimura, M. Fukuda, T. Yamazaki, and M. Hirose

Appl. Phys. Lett. 67, 2049 (1995); http://dx.doi.org/10.1063/1.115074 (3 pages) | Cited 11 times

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Chemical shifts of Si–Hx (x=1,2) species on Si surfaces obtained by ex situ chemical treatment have been evaluated by high‐resolution x‐ray photoelectron spectroscopy at a take‐off angle of 5°. Optimizing the water rinse and sample loading conditions enables identification of the Si–Hx components of the Si 2p core‐level spectra, whose intensities display strong dependence on crystallographic orientation and surface treatment. NH4F‐treated Si(111) exhibits almost exclusive monohydride termination which induces a chemical shift of 250 meV relative to the bulk component. On the other hand, 4.5% HF‐treated Si(111) and 1% HF‐treated Si(100) surfaces show increased dihydride termination with an associated shift of 480 meV. © 1995 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
79.60.Dp Adsorbed layers and thin films
81.65.-b Surface treatments

Formation of a p‐n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method

Osamu Eryu, Yasuo Okuyama, Kenshiro Nakashima, Toshitake Nakata, and Masanori Watanabe

Appl. Phys. Lett. 67, 2052 (1995); http://dx.doi.org/10.1063/1.115075 (2 pages) | Cited 2 times

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A p‐n junction has been formed in n‐type silicon carbide (6H–SiC) by aluminum (Al) doping at room temperature using a pulsed laser doping method. A 6H–SiC substrate in [H2+(CH3)3Al] atmosphere was irradiated by an KrF excimer laser of 20 ns full width at half‐maximum. The depth profile of Al determined by secondary ion mass spectroscopy showed a rectangularlike shape with a maximum concentration of 1×1022 Al/cm3. Furthermore, Al atoms were doped to a depth of about 0.05 μm from the surface. The current–voltage characteristics of the p‐n junction clearly showed the rectifying property with low leakage current. © 1995 American Institute of Physics.
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61.72.up Other materials

Phosphorus diffusion effect on defect structure of silicon with oxygen precipitates revealed by gold diffusion study

E. Yakimov and I. Périchaud

Appl. Phys. Lett. 67, 2054 (1995); http://dx.doi.org/10.1063/1.115076 (3 pages) | Cited 1 time

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Gold diffusion was used to understand the influence of phosphorus diffusion on defect structure of two step annealed Czochralski silicon wafers which contain oxygen related precipitates. Thanks to deep level transient spectroscopy measurements and use of relations already published, it was found that substitutional gold concentration is independent of oxygen precipitation, while phosphorus diffusion, by means of the injection of self‐interstitials in the bulk, shrinks the oxygen precipitates and increases substitutional gold concentration approximately to the solubility limit. © 1995 American Institute of Physics.
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61.72.J- Point defects and defect clusters
61.72.Yx Interaction between different crystal defects; gettering effect
66.30.J- Diffusion of impurities

InAlP/InGaP strain‐modulated aperiodic superlattice heterobarrier for enhanced electron confinement in visible (λ∼650 nm) light‐emitting devices

M. R. Islam, R. V. Chelakara, and R. D. Dupuis

Appl. Phys. Lett. 67, 2057 (1995); http://dx.doi.org/10.1063/1.115077 (3 pages) | Cited 5 times

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We report the design, growth, and characterization of an InAlP/InGaP strain‐modulated aperiodic superlattice heterobarrier (SMASH) for the enhancement of the performance of visible light‐emitting devices. These InAlP/InGaP heterostructures are grown on GaAs substrates by low‐pressure metalorganic chemical vapor deposition. Electron‐wave reflectivity calculations show that the virtual confining potential energy for conduction‐band electrons at the InAlP/InGaP interface can be increased by up to ∼660 meV by employing this novel barrier. Significant improvements in photoluminescence intensity at 300 and 4.2 K are observed from both InGaP quantum well and InGaP bulk‐layer double heterostructures utilizing the SMASH structure. © 1995 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Low‐resistance Ohmic conduction across compound semiconductor wafer‐bonded interfaces

F. A. Kish, D. A. Vanderwater, M. J. Peanasky, M. J. Ludowise, S. G. Hummel, and S. J. Rosner

Appl. Phys. Lett. 67, 2060 (1995); http://dx.doi.org/10.1063/1.115078 (3 pages) | Cited 48 times

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Data are presented demonstrating low‐resistance Ohmic conduction across interfaces formed by high‐temperature (750–1000 °C) compound semiconductor wafer bonding. Unipolar junctions formed by wafer bonding surfaces consisting of In0.5Ga0.5P/In0.5Ga0.5P, GaP/GaP, GaP/In0.5Ga0.5P, and In0.5Ga0.5P/GaAs are shown to exhibit low‐resistance Ohmic conduction for both p‐ and n‐isotype junctions. The achievement of these properties is demonstrated to be critically dependent upon the crystallographic alignment of the bonded wafer surfaces, irrespective of the lattice mismatch between the surfaces. Specifically, we show that the surface orientation of the bonded surfaces must be nominally matched while simultaneously maintaining rotational alignment of the wafers. © 1995 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates

B. N. Sverdlov, G. A. Martin, H. Morkoç, and David J. Smith

Appl. Phys. Lett. 67, 2063 (1995); http://dx.doi.org/10.1063/1.115079 (3 pages) | Cited 97 times

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Possible causes of a dense network of threading defects in epitaxial hexagonal GaN films grown on various substrates are discussed. We show that these defects originate at the substrate/film interface as the boundaries between differently stacked hexagonal domains, and are created by surface steps on substrates nonisomorphic with wurtzite GaN. We argue that these defects are inherent in the epitaxy of wurtzite films on nonisomorphic substrates. As a result, isomorphic substrates such as ZnO and GaN should be explored for wurtzite nitride growth. Possible effects of these defects on the properties of wurtzite nitrides are briefly discussed. © 1995 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Photoluminescence studies of hydrogenated GaAlAs grown by metalorganic vapor phase epitaxy

R. Muralidharan, T. Srinivasan, Renu Tyagi, M. V. G. Padmavati, Mahesh Bal, R. K. Purohit, and S. K. Agarwal

Appl. Phys. Lett. 67, 2066 (1995); http://dx.doi.org/10.1063/1.115080 (3 pages)

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Photoluminescence studies on ‘‘as‐grown’’ as well as hydrogenated undoped AlGaAs epitaxial layers grown by metalorganic vapor phase epitaxy has been carried out to study the effective passivation of defect centers. We report the observation of defect bound excitons which are effectively passivated by hydrogenation and the preferential enhancement of excitonic features after hydrogenation. © 1995 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors

Fast Fourier transform of photoreflectance spectroscopy of δ‐doped GaAs

D. P. Wang and C. T. Chen

Appl. Phys. Lett. 67, 2069 (1995); http://dx.doi.org/10.1063/1.115081 (3 pages) | Cited 31 times

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The photoreflectance (PR) spectroscopy of δ‐doped or similar structured sample has been observed to exhibit many Franz–Keldysh oscillations (FKOs). The beats are shown in the FKOs and they are attributed to the different frequencies of the FKOs of the transitions from the heavy and light holes. We have applied the fast Fourier transform on the PR spectra to separate the contributions from the heavy and light holes. The electric fields in the undoped layer can be calculated from the frequencies of heavy and light holes, respectively. The result of the heavy hole agrees well with that from the conventional FKOs fittings if the reduced mass=0.055 m0 is used in the conventional fittings. © 1995 American Institute of Physics.
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78.66.Fd III-V semiconductors

Pulsed excimer laser deposition of Si1−xGex thin films

F. Antoni, E. Fogarassy, C. Fuchs, J. J. Grob, B. Prevot, and J. P. Stoquert

Appl. Phys. Lett. 67, 2072 (1995); http://dx.doi.org/10.1063/1.115082 (3 pages) | Cited 9 times

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The ability to grow Si1−xGex thin films on single‐crystal silicon or fused silica substrates by the pulsed excimer laser ablation from a sintered SiGe target is investigated. The stoichiometry of the deposits was found to depend essentially on the Ge enrichment of the ablated target surface. Crystalline layers were obtained for substrate temperatures higher than a threshold value depending on its nature. Finally, surfaces, nearly free from droplets, were achieved by optimizing the laser irradiation conditions. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition

Temporal response of a high‐Tc superconducting field effect transistor

R. Schneider and R. Auer

Appl. Phys. Lett. 67, 2075 (1995); http://dx.doi.org/10.1063/1.115083 (3 pages) | Cited 10 times

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YBa2Cu3O7−x/SrTiO3/Au multilayer systems have been prepared in situ by pulsed laser deposition onto (100) SrTiO3 substrates. An electric field controlled device was patterned by suitable metal masks applied successively during the deposition process. The switching time of the superconducting source‐drain channel has been studied at T=4.2 K applying rectangular pulses to the gate electrode. We find that the source‐drain voltage follows the gate voltage variation in accordance with the RC time constant of the device. Our result is consistent with the mechanism of direct charge transfer by the electric field, but inconsistent with a model based on electric field driven migration of the oxygen atoms in the CuO chains of YBa2Cu3O7−x which predicts characteristic times in the order of minutes. © 1995 American Institute of Physics.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
85.30.Tv Field effect devices

Auger electron spectroscopy study of silver incorporation in epitaxial Y–Ba–Cu–O superconducting films grown on MgO by laser ablation

C. Hart, O. Arés, J. L. Peña, P. Bartolo‐Pérez, Victor Sosa, W. Cauich, G. A. Hirata, L. Cota‐Araiza, and M. H. Farías

Appl. Phys. Lett. 67, 2078 (1995); http://dx.doi.org/10.1063/1.115084 (3 pages) | Cited 8 times

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We have studied by Auger electron spectroscopy the incorporation of silver in epitaxial YBa2Cu3O7 (YBCO) thin films fabricated by pulsed laser deposition using YBCO+Ag 10% targets. Films were grown on MgO substrates. The silver was found in a thin layer, of approximately 50 nm in depth. X‐ray photoelectron spectroscopy confirmed that the Ag is in its metallic form. © 1995 American Institute of Physics.
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61.72.up Other materials
74.78.-w Superconducting films and low-dimensional structures
81.15.Fg Pulsed laser ablation deposition

Integrated high Tc superconducting magnetometer with multiturn input coil and grain boundary junctions

Y. Q. Shen, Z. J. Sun, R. Kromann, T. Holst, P. Vase, and T. Freloft

Appl. Phys. Lett. 67, 2081 (1995); http://dx.doi.org/10.1063/1.115085 (3 pages) | Cited 16 times

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We have fabricated and tested integrated magnetometers based on the superconducting quantum interference device (SQUID). The magnetometer consists of two patterned films of YBa2Cu3O7, separated by an insulating layer of SrTiO3. A multiturn input coil was integrated on top of the SQUID, where the misorientation angle in a SrTiO3 bicrystal substrate was used to form the grain boundary junctions. The noise spectrum was characterized at 77 K and showed that above 10 Hz the magnetometer sensitivity is limited by a white noise level of around 4×10−5 Φ0/Hz1/2. In the 4 mm × 4 mm detection area of the input coil, this translates into a magnetic field sensitivity of 320 fT/ Hz1/2 at 100 Hz. Compared to the theoretical value of an optimized SQUID the white noise level of the magnetometer is two times higher. Below 10 Hz the noise is dominated by 1/f noise mainly due to the critical current fluctuations. © 1995 American Institute of Physics.
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07.55.Ge Magnetometers for magnetic field measurements
85.25.Dq Superconducting quantum interference devices (SQUIDs)

Growth and properties of submillimeter single grain Tl2Ba2Ca2Cu3O10+x superconducting thin films

H. C. Lin, T. M. Uen, C. K. Liu, J. Y. Juang, K. H. Wu, and Y. S. Gou

Appl. Phys. Lett. 67, 2084 (1995); http://dx.doi.org/10.1063/1.115086 (3 pages) | Cited 3 times

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Distinct crystalline superconducting grains of Tl2Ba2Ca2Cu3O10+x(Tl−2223) with sizes up to 150 μm×150 μm×1 μm were prepared by a single target dc‐sputtering process followed by proper postannealing at temperatures around 910 °C. A reactive ion etching process was developed to pattern an ∼10 μm wide bridge with four contact leads directly on a single grain to study its superconducting transport properties. The etching process was found to have only minimal effect on the superconducting transition temperature Tc, which was typically around 110 K. Grains grown on MgO(100) and LaAlO3(100) substrates, although displaying somewhat different in‐plane orientations, all had critical current densities Jc, well above 106 A/cm2 at 77 K. The existence of only one grain boundary, however, can reduce the Jc by orders of magnitude. © 1995 American Institute of Physics.
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74.25.Sv Critical currents
74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures

Noise properties of direct current SQUIDs with quasiplanar YBa2Cu3O7 Josephson junctions

M. I. Faley, U. Poppe, K. Urban, H. Hilgenkamp, H. Hemmes, W. Aarnink, J. Flokstra, and H. Rogalla

Appl. Phys. Lett. 67, 2087 (1995); http://dx.doi.org/10.1063/1.115087 (3 pages) | Cited 15 times

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We describe the noise performance of dc SQUIDs fabricated with quasiplanar ramp‐type Josephson junctions on the basis of c‐axis‐oriented YBa2Cu3O7/PrBa2Cu3O7 thin‐film heterostructures. The noise spectrum of the dc SQUIDs was measured with dc‐ and ac‐bias schemes at different temperatures and showed values below 10−5 Φ0/Hz1/2 down to frequencies of about 1 Hz at 70 K. Up to now for the magnetic flux noise and the energy resolution obtained at 1 kHz and 77 K the best values were 2.5×10−6, Φ0/Hz1/2 and 3×10−31 J/Hz, respectively. A study of the white and 1/f noises of the SQUIDs was performed. The influence of magnetic flux, bias current, high static magnetic fields, and aging on the SQUID noise were investigated. The junctions and devices do not degrade due to aging in air or thermal cycling. © 1995 American Institute of Physics.
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74.40.-n Fluctuation phenomena
85.25.Dq Superconducting quantum interference devices (SQUIDs)

Magnetic properties of radio frequency sputtered thin films of La–Pb–Mn oxides

G. Srinivasan, V. Suresh Babu, and M. S. Seehra

Appl. Phys. Lett. 67, 2090 (1995); http://dx.doi.org/10.1063/1.115088 (3 pages) | Cited 20 times

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We report the synthesis by radio frequency sputtering and characterization of thin films of La0.74Pb0.26MnOz on Si, the substrate of choice for device integration. Textured films with (110) orientation were grown on (100) Si and the films are ferromagnetic below 325 K. Resistivity ρ data show a metal‐to‐semiconductor transition at Tms=250 K. The ferromagnetic resonance linewidth shows a discontinuity at Tms. Data on magnetoresistance MR=[ρ(0)−ρ(H)]/ρ(0) versus temperature indicate a maximum value of 22% at Tms for a static magnetic field of 2 T and MR values of 15%–22% are observed over the entire temperature range 5–300 K. © 1995 American Institute of Physics.
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73.61.-r Electrical properties of specific thin films
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
81.15.Cd Deposition by sputtering

Magnetoresistance in La2/3Ca1/3MnO3+δ : Dependence on magnetic history

R. von Helmolt, J. Wecker, T. Lorenz, and K. Samwer

Appl. Phys. Lett. 67, 2093 (1995); http://dx.doi.org/10.1063/1.115089 (3 pages) | Cited 46 times

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We investigated the magnetoresistance of La2/3Ca1/3MnO3+δ magnetic thin films. Under certain conditions, the magnetoresistance curves show a remarkable hysteresis and the resistance becomes dependent on the magnetic history. A relaxation behavior of the resistance has also been observed. Hysteresis and relaxation of the resistance are very similar to the phenomena of magnetoviscosity of the magnetic moment in spin glasses and the magnetic aftereffect in hard magnets. © 1995 American Institute of Physics.
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72.15.Gd Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

Arrays of normal metal tunnel junctions in weak Coulomb blockade regime

K. P. Hirvi, J. P. Kauppinen, A. N. Korotkov, M. A. Paalanen, and J. P. Pekola

Appl. Phys. Lett. 67, 2096 (1995); http://dx.doi.org/10.1063/1.115090 (3 pages) | Cited 33 times

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Universal features of I–V characteristics of one‐dimensional arrays of normal metal tunnel junctions have been tested against inhomogenities in the junction parameters, number of junctions in the array, and magnetic field. We find that the differential conductance versus bias voltage obeys the analytic form to within 1% if the fabrication errors are smaller than 10% in junction areas, and if the array has more than ten junctions. Furthermore, the universal relation is insensitive to magnetic field at least up to 8 T. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
FREE

Erratum: ‘‘Monte Carlo simulation of hot electron charge transport in diamond under an internal electric field’’ [Appl. Phys. Lett. 67, 1235 (1995)]

Z.‐H. Huang, M. S. Chung, P. H. Cutler, N. M. Miskovsky, and T. E. Sullivan

Appl. Phys. Lett. 67, 2099 (1995); http://dx.doi.org/10.1063/1.115553 (1 page)

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Abstract Unavailable
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72.80.Cw Elemental semiconductors
79.70.+q Field emission, ionization, evaporation, and desorption
99.10.Cd Errata
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