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9 Oct 1995

Volume 67, Issue 15, pp. 2111-2251

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A compact device for highly efficient dispersion compensation in fiber transmission

U. Peschel, T. Peschel, and F. Lederer

Appl. Phys. Lett. 67, 2111 (1995); http://dx.doi.org/10.1063/1.114736 (3 pages) | Cited 29 times

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We show that the supermodes of two coupled waveguides may exhibit a giant tunable group‐velocity dispersion, which allows for dispersion compensation in long‐haul fiber transmission lines, pulse compression, as well as bright soliton propagation in materials with large normal dispersion. © 1995 American Institute of Physics.
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42.81.Dp Propagation, scattering, and losses; solitons

Nonlinear polarization switching in a semiconductor single quantum well optical amplifier

Ming‐Shan Lin, Ding‐Wei Huang, C. C. Yang, Minghwei Hong, and Young‐Kai Chen

Appl. Phys. Lett. 67, 2114 (1995); http://dx.doi.org/10.1063/1.114737 (3 pages)

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Efficient nonlinear or power‐dependent polarization switching in a semiconductor quantum‐well amplifier is reported. In the experiment, an amplifier with an InGaAs/GaAs single quantum well structure which lases at 974 nm is used. Efficient self‐switching is observed at 940 nm with signals 3 psec wide when gain and absorption saturation occur in the TM and TE polarization modes, respectively. The switching peak intensity is estimated to be lower than 13.2 MW/cm2. A theoretical model is adopted to show the consistent trends of switching behaviors with the experimental data. © 1995 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.66.Fd III-V semiconductors

Polycrystalline diamond photoconductive device with high UV‐visible discrimination

Robert D. McKeag, Simon S. M. Chan, and Richard B. Jackman

Appl. Phys. Lett. 67, 2117 (1995); http://dx.doi.org/10.1063/1.114738 (3 pages) | Cited 55 times

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Planar metal–diamond–metal photoconductive devices have been fabricated from free standing large grain (20–30 μm) polycrystalline thin film diamond. An interdigitated electrode design with spacings of 20 μm was used to produce effective UV photodetecting devices at bias values in the range 0.1–10 V. A methane‐air treatment has been used to modify the structures such that unprecedented performance characteristics have been recorded (106 higher response to 200 nm than visible wavelengths, <0.1 nA dark currents); spectral features similar to those observed in natural diamond crystals have been observed indicating that the treatment used led to near ideal electronic characteristics from polycrystalline material. © 1995 American Institute of Physics.
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73.40.Sx Metal-semiconductor-metal structures
73.50.Pz Photoconduction and photovoltaic effects
85.60.Gz Photodetectors (including infrared and CCD detectors)

All‐optical modulation via nonlinear cascading in type II second‐harmonic generation

G. Assanto, Z. Wang, D. J. Hagan, and E. W. VanStryland

Appl. Phys. Lett. 67, 2120 (1995); http://dx.doi.org/10.1063/1.114739 (3 pages) | Cited 26 times

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Utilizing a type II interaction for second‐harmonic generation in a crystal of potassium titanyl phosphate, we experimentally demonstrate the all‐optical action of a light modulator with both signal and output at the same optical wavelength. This modulator is controlled by the intensity of the injected signal, a characteristic that makes it a suitable candidate for all‐optical transistor action and ultrafast analog processing in transparent networks for telecommunications. © 1995 American Institute of Physics.
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42.65.-k Nonlinear optics
42.79.Hp Optical processors, correlators, and modulators

Room‐temperature inverse Faraday effect in terbium gallium garnet

M. Yasin Akhtar Raja, David Allen, and Wade Sisk

Appl. Phys. Lett. 67, 2123 (1995); http://dx.doi.org/10.1063/1.114740 (3 pages) | Cited 14 times

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The inverse Faraday effect (IFE) in terbium gallium garnet (TGG) is observed at room temperature. A circularly polarized 532 nm optical pulse from a frequency doubled Nd:YAG laser traverses a TGG crystal, resulting in an induced voltage in a surrounding detection coil. Variation of laser intensity and polarization direction leads to changes in the induced voltage in accordance with Faraday’s law of induction. The IFE is attributed to the optical Stark effect. © 1995 American Institute of Physics.
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42.65.-k Nonlinear optics
78.20.Ls Magneto-optical effects

532 nm pumped optical parametric oscillator in bulk periodically poled lithium niobate

V. Pruneri, J. Webjörn, P. St. J. Russell, and D. C. Hanna

Appl. Phys. Lett. 67, 2126 (1995); http://dx.doi.org/10.1063/1.114741 (3 pages) | Cited 26 times

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We report a quasi‐phase‐matched optical parametric oscillator (OPO) pumped by the second harmonic of a single frequency Q‐switched Nd:YAG laser. Both the frequency doubling to 532 nm and the parametric oscillation are performed in periodically poled lithium niobate crystals with a nonlinearity of ∼15 pm/V. The OPO has been operated in ‘‘singly resonant’’ and ‘‘doubly resonant’’ configurations. The threshold in the singly resonant case was ∼0.14 J/cm2, more than one order of magnitude below the damage limit. OPO tuning from 945 to 1225 nm was achieved by changing both the period of domain reversal (from 6.8 to 6.85 μm) and the temperature of the crystal. © 1995 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Modification of the optical properties of liquid crystals using near‐field scanning optical microscopy

Patrick J. Moyer, Karsten Walzer, and Michael Hietschold

Appl. Phys. Lett. 67, 2129 (1995); http://dx.doi.org/10.1063/1.114742 (3 pages) | Cited 22 times

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Near‐field scanning optical microscopy (NSOM) has been utilized to study the behavior of liquid crystals at room temperature. The material, 4′‐octyl‐4‐biphenylcarbonitrile (8cb) was studied at the air–liquid interface. The NSOM probe is shown to take an active role in modifying, and subsequently reading, the liquid crystal with about 65 nm resolution. The optical modification is proven to be independent of topographic modification. Results indicate potential technological uses in data storage and displays. © 1995 American Institute of Physics.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Manipulation of ion channeling patterns using magnetic quadrupole lenses

M. B. H. Breese, P. J. C. King, G. W. Grime, L. E. Seiberling, and M. A. Boshart

Appl. Phys. Lett. 67, 2132 (1995); http://dx.doi.org/10.1063/1.114743 (3 pages)

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This letter demonstrates that ion channeling patterns, produced by the passage of 3 MeV protons through a 0.5 μm thick [001] silicon crystal, can be transported and manipulated to produce enlarged or reduced area patterns using magnetic quadrupole lenses. The different effects on the ion channeling patterns obtained by using single quadrupole lenses and quadrupole multiplets are shown. The maximum attainable magnification under present conditions is investigated and a fundamental limitation to this process is identified as being the energy spread gained by the proton beam as it passes through the crystal. © 1995 American Institute of Physics.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
41.85.Lc Particle beam focusing and bending magnets, wiggler magnets, and quadrupoles
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Surface‐micromachined free‐space micro‐optical systems containing three‐dimensional microgratings

S. S. Lee, L. Y. Lin, and M. C. Wu

Appl. Phys. Lett. 67, 2135 (1995); http://dx.doi.org/10.1063/1.114744 (3 pages) | Cited 16 times

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Free‐space micro‐optical systems on a chip containing three‐dimensional microgratings have been demonstrated using surface‐micromachining technique. The micrograting is integrated with a rotary stage, a collimating micro‐Fresnel lens, and an edge‐emitting laser held by three‐dimensional alignment structures on a single Si substrate. Diffraction patterns for various grating rotation angles are observed. Another optical interconnect module consisting of three cascaded microgratings is also demonstrated. The micrograting is a basic building block for many micro‐optical systems and is very attractive for applications in microspectrometers, free‐space optical interconnect, optoelectronic packaging, and wavelength‐division multiplexed integrated micro‐optical systems. © 1995 American Institute of Physics.
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42.79.Dj Gratings
42.82.-m Integrated optics

Large electromagnetic stop bands in metallodielectric photonic crystals

E. R. Brown and O. B. McMahon

Appl. Phys. Lett. 67, 2138 (1995); http://dx.doi.org/10.1063/1.114745 (3 pages) | Cited 74 times

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An electromagnetic stop band spanning about one octave is observed in a periodic structure consisting of a face‐centered‐cubic Bravais lattice of metal spheres supported by a low‐loss dielectric. The low‐frequency edge of the stop band is consistent with the Mie condition for the metallic spheres, and the center frequency of the stop band is a function of the lattice constant and the support dielectric material. For example, a sample having a cubic lattice constant of 1.65 cm, 3/8 in. diam chrome spheres at each atomic core, and Teflon support dielectric displayed a lower band edge of approximately 5.2 GHz, an upper band edge of about 12.8 GHz, and a maximum rejection at the center of the band of roughly 20 dB. © 1995 American Institute of Physics.
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42.25.Fx Diffraction and scattering
42.50.-p Quantum optics

Polarization instability and relative intensity noise in vertical‐cavity surface‐emitting lasers

D. V. Kuksenkov, H. Temkin, and S. Swirhun

Appl. Phys. Lett. 67, 2141 (1995); http://dx.doi.org/10.1063/1.114746 (3 pages) | Cited 37 times

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We observe a polarization instability in circularly symmetric vertical‐cavity surface‐emitting lasers. A relatively long time, 3–5 ns, is required to establish a dominant polarization state. Under high‐speed digital modulation this leads to strong enhancement, 20–30 dB, in polarization resolved low‐frequency relative intensity noise. This polarization instability is accurately described by a simple rate‐equation model. A similar increase in relative intensity noise, under dc bias, is caused by energy partition between orthogonally polarized modes. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Mi Dynamical laser instabilities; noisy laser behavior

Microgun‐pumped blue lasers

D. Hervé, R. Accomo, E. Molva, L. Vanzetti, J. J. Paggel, L. Sorba, and A. Franciosi

Appl. Phys. Lett. 67, 2144 (1995); http://dx.doi.org/10.1063/1.114747 (3 pages) | Cited 21 times

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Microgun‐pumped lasers, in which electron beam pumping is achieved via an array of low‐voltage, field‐emission microtips, were demonstrated in the blue and blue‐green regions of the spectrum. The devices exploit graded index, separate confinement Zn1−xCdxSe/ZnSe heterostructures grown by molecular beam epitaxy on In1−xGaxAs(100) substrates. Lasing thresholds were in the 4–20 kW/cm2 range for temperatures between 83 and 225 K, and the device lifetime exceed several hours at a 12.5% duty cycle for a laser operating at 83 K and a wavelength of 478.4 nm. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Frequency dependence of metal‐particle/insulating oil electrorheological fluids

Weijia Wen and Kunquan Lu

Appl. Phys. Lett. 67, 2147 (1995); http://dx.doi.org/10.1063/1.114748 (2 pages) | Cited 9 times

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The frequency dependence of the shear stress of metal‐particle/insulating oil electrorheological (ER) fluids under an ac electric field has been studied. The results show that the shear stress of the metal‐particle ER fluid under a fixed electric field increases with increasing frequency and then tends to a saturated value at higher frequency. The shear stress at 103 Hz is much larger than that under a dc field. The transition of the shear stress shifts to higher frequency when the conductivity of the fluid is larger. The measurements are consistent with the theoretical model proposed by Davis [J. Appl. Phys. 73, 680 (1993)]. © 1995 American Institute of Physics.
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83.60.Np Effects of electric and magnetic fields
83.80.Gv Electro- and magnetorheological fluids

Optical emission spectroscopy studies of the effects of nitrogen addition on diamond synthesis in a CH4–CO2 gas mixture

Tsao‐Ming Hong, Sheng‐Hsiung Chen, Yih‐Song Chiou, and Chia‐Fu Chen

Appl. Phys. Lett. 67, 2149 (1995); http://dx.doi.org/10.1063/1.114749 (3 pages) | Cited 13 times

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The influence of nitrogen on the growth of diamond using the gas mixtures of CH4–CO2 by microwave plasma chemical vapor deposition was investigated. A clear improvement in the surface morphology and quality of the diamond films indicates the beneficial effect of adding nitrogen to CH4–CO gas mixtures. Analysis using Auger electron spectroscopy and secondary ion mass spectroscopy shows very low and uniform levels of nitrogen in the diamond films. Atomic nitrogen plays a dominant role in C/H/O/N plasma chemical vapor deposition processes because of the amount of oxygen atoms increased via the titration reaction of nitrogen atoms (a high‐rate reaction): N+NO→N2+O. This produces a significant influence on diamond synthesis in a CH4–CO2–N2 gas mixture. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Performance of tantalum‐silicon‐nitride diffusion barriers between copper and silicon dioxide

M. S. Angyal, Y. Shacham‐Diamand, J. S. Reid, and M.‐A. Nicolet

Appl. Phys. Lett. 67, 2152 (1995); http://dx.doi.org/10.1063/1.114750 (3 pages) | Cited 12 times

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Amorphous, 10‐nm‐thick tantalum‐silicon‐nitride (TaSiN) layers were found to be effective diffusion barriers between copper and thermal silicon dioxide. The films were electrically evaluated using TaSiN/Cu/TaSiN‐oxide‐silicon capacitors and bias thermal stress (BTS) treatments; the capacitors were stressed at 300 °C with electric fields in excess of 1 MV/cm for up to 80 h. High frequency capacitance versus voltage characteristics were recorded at room temperature before and after BTS treatment. Based upon comparisons between these (C–V) curves, barrier failure was concluded to have not occurred. © 1995 American Institute of Physics.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation

Scanning probe microscopy of NdBa2Cu3Ox thin film surfaces

M. Badaye, Wu Ting, K. Fukushima, N. Koshizuka, T. Morishita, and S. Tanaka

Appl. Phys. Lett. 67, 2155 (1995); http://dx.doi.org/10.1063/1.114751 (3 pages) | Cited 16 times

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We have found that NdBa2Cu3Ox (NBCO) thin films, fabricated by the laser ablation process, have highly stable and smooth surfaces. Clear spiral patterns with 4–5 terraces are observed all over the film area with an atomic force microscope (AFM) operating in air. We have also obtained atomically resolved image of the spiral terraces using AFM, and also using ultrahigh vacuum scanning tunneling microscope. This study suggests that NBCO film is a good candidate for device applications. © 1995 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
81.15.Fg Pulsed laser ablation deposition

Suppression of transient enhanced diffusion following in situ photoexcitation during boron ion implantation

J. Ravi, Yu. Erokhin, G. A. Rozgonyi, and C. W. White

Appl. Phys. Lett. 67, 2158 (1995); http://dx.doi.org/10.1063/1.114752 (3 pages) | Cited 4 times

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The effect of in situ photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B+ implantation at 35 keV for a dose of 5×1014 cm−2 at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550–700 °C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 °C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self‐interstitials during the implantation process is significantly reduced. © 1995 American Institute of Physics.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities

Be diffusion mechanisms in InGaAs during post‐growth annealing

S. Koumetz, J. Marcon, K. Ketata, M. Ketata, C. Dubon‐Chevallier, P. Launay, and J. L. Benchimol

Appl. Phys. Lett. 67, 2161 (1995); http://dx.doi.org/10.1063/1.114753 (3 pages) | Cited 14 times

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Be diffusion during post‐growth annealing has been studied in InGaAs epitaxial layers, grown between two undoped InGaAs layers. To explain the observed concentration profiles and related diffusion mechanisms, a general substitutional–interstitial model is proposed. On the one hand, a simultaneous diffusion by dissociative and kick‐out models is suggested and, on the other hand, the Fermi‐level effect is used to explain the functional dependence change of the effective diffusion coefficient of beryllium species with its concentration. The concentration dependent diffusivity has also been covered to perform an improved data fitting of Be diffusion profiles. © 1995 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Increased uniformity and thermal stability of CoSi2 thin films by Ti capping

R. T. Tung and F. Schrey

Appl. Phys. Lett. 67, 2164 (1995); http://dx.doi.org/10.1063/1.114754 (3 pages) | Cited 33 times

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A thin (1–3 nm) Ti layer is shown to improve the uniformity and the thermal stability of CoSi2 layers grown on Si substrates. The beneficial effect of the Ti(TiN) cap is demonstrated for a variety of CoSi2 layers, including Ti‐interlayer mediated epitaxial (TIME) CoSi2/Si(100), polycrystalline CoSi2/Si(100), and CoSi2/polycrystalline Si. The increased uniformity and stability of the silicide layers are speculated to result from reduced surface and interface diffusion during nitrogen and/or vacuum anneals. In the case of TIME CoSi2/Si(100), both the use of a Ti cap and the removal of a metastable Ti4Co4Si7 overlayer prior to high‐temperature anneals are found important for the fabrication of uniform, single‐crystal layers. © 1995 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
68.60.Dv Thermal stability; thermal effects

Compensating acceptors and donors in nitrogen δ‐doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

Z. Zhu, G. D. Brownlie, G. Horsburgh, P. J. Thompson, S. Y. Wang, K. A. Prior, and B. C. Cavenett

Appl. Phys. Lett. 67, 2167 (1995); http://dx.doi.org/10.1063/1.115091 (3 pages) | Cited 15 times

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The compensating acceptors and donors in nitrogen δ‐doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf‐plasma source are studied by means of photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). The temperature dependence of PL and PLE spectra obtained from the nitrogen δ‐doped layers is investigated in detail, and a deep acceptor and a deep donor with ionization energies of ∼170 and ∼88 meV are reported for the nitrogen δ‐doped layers. These two deep centers are assigned to N clusters, i.e., NSe‐Zn‐NSe for the deep acceptor and NSe‐NZn for the deep donor. © 1995 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
71.55.Gs II-VI semiconductors
78.55.Et II-VI semiconductors

Cyclotron mass of two‐dimensional holes in strained‐layer GaAs/In0.20Ga0.80As/GaAs quantum well structures

Shawn‐Yu Lin, H. P. Wei, D. C. Tsui, and J. F. Klem

Appl. Phys. Lett. 67, 2170 (1995); http://dx.doi.org/10.1063/1.115092 (3 pages) | Cited 6 times

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We report a systematic study of the effective mass of two‐dimensional (2D) holes in a series of ten p‐type GaAs/In0.20Ga0.80As/GaAs quantum well structure samples. The 2D hole density and its effective mass (m∗)are independently determined from Shubnikov–de Haas and cyclotron resonance measurements at 4.2 K. We find the m∗ increases from (0.123±0.005) me to (0.191±0.015) me as the 2D hole density is varied from 0.54×1011/cm2to 8.5×1011/cm2. The experimental data are described quantitatively in terms of a two‐band tight binding model using the valence band edge mass and strain‐induced valence band splitting as parameters. © 1995 American Institute of Physics.
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71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Thin‐film transistors with multistep deposited amorphous silicon layers

Yue Kuo

Appl. Phys. Lett. 67, 2173 (1995); http://dx.doi.org/10.1063/1.115093 (3 pages) | Cited 2 times

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Inverted, staggered thin‐film transistors (TFTs), in which the a‐Si:H layer is deposited stepwise, using different rf powers, were prepared and studied. Using identically prepared top and bottom interface silicon layers, the multilayer a‐Si:H TFT characteristics can be better or worse than those of a single‐layer a‐SiH TFT, depending on the rf power used to deposit the middle layer and the total number of layers added. The result can be explained by considering the mechanism of the SiH4 plasma deposition process. For example, the extra hydrogen generated in the high power plasma can passivate dangling bonds, which enhances the transistor performance. The high intensity plasma radiation source can generate defects at the film/film interface as well as in the bulk of the film, which deteriorates the transistor. © 1995 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Tv Field effect devices

Nanoparticle precursor route to low‐temperature spray deposition of CdTe thin films

Martin Pehnt, Douglas L. Schulz, Calvin J. Curtis, Kim M. Jones, and David S. Ginley

Appl. Phys. Lett. 67, 2176 (1995); http://dx.doi.org/10.1063/1.115094 (3 pages) | Cited 12 times

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In this letter we report a nanoparticle‐derived route to CdTe thin films. CdTe nanoparticles 39±8 Å in diameter, prepared by an organometallic route, were characterized by x‐ray diffraction, UV‐Vis spectroscopy, transmission electron microscopy, and energy dispersive x‐ray spectroscopy. CdTe thin‐film deposition was realized by spraying a nanoparticle/butanol colloid onto SnO2‐coated glass substrates at variable susceptor temperatures. The resultant CdTe films were characterized by atomic force microscopy, x‐ray diffraction, and UV‐Vis spectroscopy. Smooth and dense CdTe thin films were obtained using growth temperatures ∼200 °C less than conventional spray pyrolysis. A growth temperature dependence upon CdTe grain size formation and crystallinity was observed by atomic force microscopy and x‐ray diffraction. UV‐Vis characterization revealed a transformation in the optical properties of the CdTe thin films as a function of growth temperature. © 1995 American Institute of Physics.
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81.15.Rs Spray coating techniques
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2

John F. Conley, Patrick M. Lenahan, Aivars J. Lelis, and Timothy R. Oldham

Appl. Phys. Lett. 67, 2179 (1995); http://dx.doi.org/10.1063/1.115095 (3 pages) | Cited 15 times

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We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can ‘‘switch’’ charge state in response to changes in the voltage applied to the gate of a metal‐oxide‐semiconductor field‐effect transistor. Electron spin resonance measurements reveal that some Eγ′ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps. © 1995 American Institute of Physics.
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61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
71.55.Ht Other nonmetals
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Room‐temperature 1.5 μm luminescence of co‐deposited erbium and germanium

J. H. Chen, D. Pang, H. M. Cheong, P. Wickboldt, and W. Paul

Appl. Phys. Lett. 67, 2182 (1995); http://dx.doi.org/10.1063/1.115096 (3 pages) | Cited 13 times

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Nanocrystalline germanium films containing erbium were deposited by thermal evaporation under 0.6 Torr of argon onto crystalline silicon wafer substrates. Weak broad photoluminescence (PL) around 1.5 μm was observed at room temperature. Annealing under 10−7 Torr of vacuum for 3 h at 500 °C produced no change in the PL spectrum. After 1 h oxidation in air at 500 °C the PL intensity increased by an order of magnitude with reduction of the spectral linewidth and appearance of distinct structures, a portion of which is similar to that observed for Er‐implanted Si:O. Subsequent increase in oxidation time reduced the PL intensity slightly with no change in the spectral shape. The PL intensity exhibits a sublinear increase with pump power and approaches saturation at 200 mW. Raman spectra before and after anneal are also presented. Annealing increased the average grain size from 5 to 10 nm. The PL spectrum of erbium metal after oxidation in air at 500 °C is quite different from that of these oxidized Ge:Er films. © 1995 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
71.55.Cn Elemental semiconductors
78.55.Hx Other solid inorganic materials
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