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23 Oct 1995

Volume 67, Issue 17, pp. 2431-2572

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Broadband optical reflector—an application of light localization in one dimension

Daozhong Zhang, Zhaolin Li, Wei Hu, and Bingying Cheng

Appl. Phys. Lett. 67, 2431 (1995); http://dx.doi.org/10.1063/1.114597 (2 pages) | Cited 32 times

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A broad‐band optical reflector based on the localization of light for one‐dimensional disordered systems is proposed and demonstrated both theoretically and experimentally. The binary disordered multilayer reflector consists of alternating random layers of two coating materials. Its high reflection range is much wider than that of standard λ/4 stacks and can be obtained by a conventional coating method and ordinary materials. This kind of reflector will have significant applications in laser technology and optical equipment. © 1995 American Institute of Physics.
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42.79.Fm Reflectors, beam splitters, and deflectors
78.66.-w Optical properties of specific thin films

Optical limiting effect in a two‐photon absorption dye doped solid matrix

Guang S. He, Jayant D. Bhawalkar, Chan F. Zhao, and Paras N. Prasad

Appl. Phys. Lett. 67, 2433 (1995); http://dx.doi.org/10.1063/1.114598 (3 pages) | Cited 139 times

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We recently reported a new lasing dye, trans‐4‐[p‐(N‐ethyl‐N‐hydroxylethylamino)styryl]‐N‐methylpyridinium tetraphenylborate (ASPT), which has also been shown to possess a strong two‐photon absorption (TPA) and subsequent frequency upconversion fluorescence behavior when excited with near infrared laser radiation. Based on the TPA mechanism, a highly efficient optical limiting performance has been demonstrated in a 2 cm long ASPT‐doped epoxy rod pumped with 1.06 μm Q‐switched laser pulses at 50–250 MW/cm2 intensity levels. The measured nonlinear absorption coefficient reached 6 cm/GW for the tested sample of dopant concentration d0=4×10−3 M/L. The molecular TPA cross section of ASPT in the epoxy matrix is estimated as σ2=2.5×10−18 cm4/GW or σ2′=4.7×10−46 cm4/photon/s, respectively. Two‐photon pumped cavity lasing is also observed in an ASPT‐doped polymer rod. © 1995 American Institute of Physics.
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42.55.Mv Dye lasers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Polarized electroluminescence from oriented p‐sexiphenyl vacuum‐deposited film

Masanao Era, Tetsuo Tsutsui, and Shogo Saito

Appl. Phys. Lett. 67, 2436 (1995); http://dx.doi.org/10.1063/1.114599 (3 pages) | Cited 102 times

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Oriented sexiphenyl (6P) film was prepared through epitaxial growth on rubbed substrates by vacuum deposition. Polarized absorption spectra demonstrated that the long axis of 6P molecule was highly oriented along the rubbing direction. Using the epitaxial growth film of 6P, we fabricated electroluminescent (EL) devices consisting of indium‐tin‐oxide anode, emissive layer of 6P, electron‐transporting layer of an oxadiazole derivative, and MgAg alloy cathode. Owing to the orientation of 6P molecules, EL polarized in the rubbing direction was observed in the devices. © 1995 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices

Intracavity, frequency‐doubled, miniaturized Nd:YAlO3 blue laser at 465 nm

Joseph H. Zarrabi, Paul Gavrilovic, and Shobha Singh

Appl. Phys. Lett. 67, 2439 (1995); http://dx.doi.org/10.1063/1.114600 (3 pages) | Cited 3 times

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A blue laser at 465 nm has been demonstrated by intracavity frequency doubling of the 930 nm transition in neodymium‐doped crystal of yttrium orthoaluminate (Nd:YAlO3). The compact plano–plano laser cavity comprising a 1.2‐mm‐thick Nd:YAlO3 crystal and a 1.3 mm potassium niobate (KNbO3) crystal generated more than 15 mW of blue power when pumped by a Ti:sapphire laser. The blue output is linearly polarized with a TEM00 spatial profile. © 1995 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Passive mode locking of a Nd3+:SrLaGa3O7 laser

A. V. Terentiev, P. V. Prokoshin, K. V. Yumashev, V. P. Mikhailov, W. Ryba‐Romanowski, S. Golab, and W. Pisarski

Appl. Phys. Lett. 67, 2442 (1995); http://dx.doi.org/10.1063/1.114601 (3 pages) | Cited 6 times

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A Nd3+:SrLaGa3O7 laser with a pentacarbocyanine dye cell produced regular 25–30 ps pulses over the period of the flash lamp. Output energy as a function of mirror reflectivity and lamp energy was also determined. © 1995 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking

Cross‐correlation measurement of ultrafast switching in a symmetric Mach–Zehnder all‐optical switch

Shigeru Nakamura, Kazuhito Tajima, and Yoshimasa Sugimoto

Appl. Phys. Lett. 67, 2445 (1995); http://dx.doi.org/10.1063/1.114602 (3 pages) | Cited 12 times

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We present cross‐correlation measurement of ultrafast switching in a symmetric Mach–Zehnder all‐optical switch. A full width at half‐maximum of 2 ps has been achieved in the cross‐correlation trace, corresponding to the estimated switching time of 1.5 ps. Both the switch‐on and switch‐off time of the measured traces are limited only by the control pulse duration of 1.1 ps. These results indicate that the effects of group velocity dispersion and intraband carrier relaxation are negligible within the present time scale. © 1995 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Silicon on insulator Mach–Zehnder waveguide interferometers operating at 1.3 μm

C. Z. Zhao, G. Z. Li, E. K. Liu, Y. Gao, and X. D. Liu

Appl. Phys. Lett. 67, 2448 (1995); http://dx.doi.org/10.1063/1.114603 (2 pages) | Cited 29 times

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See Also: Erratum

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Mach–Zehnder (MZ) waveguide interferometers integrated on SOI (silicon on insulator) for 1.3 μm operation are studied on the basis of the large cross‐section single‐mode rib waveguide condition and the free‐carrier plasma dispersion effect in Si wafer direct bonding SOI by back‐polishing. And the MZ interferometers are fabricated by using KOH anisotropic etching. Their insertion losses and modulation depths are measured to be 4.81 dB and 98%, respectively, at the wavelength of 1.3 μm when a forward bias voltage applied to a p+n junction is 0.95 V and the active zone length of the MZ interferometers is 816.0 μm. © 1995 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays

Microstructural study of Nd‐doped LiTaO3

Xing‐Long Wu, Zhi‐Qiang Zhang, An Hu, Ming‐Sheng Zhang, Shu‐Sheng Jiang, and Duan Feng

Appl. Phys. Lett. 67, 2450 (1995); http://dx.doi.org/10.1063/1.114604 (3 pages) | Cited 3 times

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X‐ray diffraction, infrared, and Raman spectra of Nd‐doped LiTaO3 (LT:Nd) were examined. X‐ray diffraction patterns of the x and y faces display the appearance of new diffraction peaks and the existence of microtwin crystals, indicating the microstructural deviation from a trigonal system of pure LT crystal. Infrared transmission spectrum shows more than seven strong vibrational bands in the high frequency region 1500–6000 cm−1. Their intensities and frequencies hardly change after annealing the sample at high temperature. We attribute these bands to the existence of defects and some metal and organic complexes in the sample. Similar results were obtained from the Raman spectra. In addition, the transmitted polarized light photomicrograph of the Z face of LT:Nd displays the occurrence of a helix dislocation. All experimental results indicate that the microstructural imperfection of LT:Nd can lead to some new optical effects. © 1995 American Institute of Physics.
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61.72.up Other materials
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Upconversion luminescence of Er3+ in CdX2 system glasses (X=Cl, Br, I)

Masanori Shojiya, Masahide Takahashi, Ryoji Kanno, Yoji Kawamoto, and Kohei Kadono

Appl. Phys. Lett. 67, 2453 (1995); http://dx.doi.org/10.1063/1.114605 (3 pages) | Cited 21 times

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Near‐infrared to visible upconversion characteristics of Er3+ in CdX2‐based halide glasses (X=Cl, Br, or I) has been investigated. When 4I9/2 state is pumped by 800 nm radiation from an AlGaAs laser diode, the upconverted green emissions (520–560 nm) of 2H11/2+4S3/2→I15/2 transition are clearly observed in all the glasses. The linewidth of green emission in these glasses becomes narrow in the order of chloride, bromide, and iodide. The CdCl2 and CdBr2 system glasses give blue upconversion luminescence (around 410 nm) due to the 2H9/2→I15/2 transition, but this emission is not observed in the CdI2 system glass because of the absorption edge at around 450 nm. The fluorescence spectra of CdX2 system glasses suggest that the multiphonon relaxation rate depends on choice of the X species. © 1995 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Signal gain due to a polarization coupling in an AlGaAs channel waveguide

J. S. Aitchison, Jin U. Kang, and G. I. Stegeman

Appl. Phys. Lett. 67, 2456 (1995); http://dx.doi.org/10.1063/1.114606 (3 pages) | Cited 9 times

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We experimentally demonstrate signal gain for picosecond signals due to an orthogonally polarized pump beam in an AlGaAs channel waveguide at a wavelength of 1.55 μm, below half the band gap. We show as much as 40% signal gain, or depletion, depending on the polarization states of the pump and the probe. The results are in good agreement with theory. © 1995 American Institute of Physics.
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42.65.-k Nonlinear optics
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Effects of Sb doping on Si(001) surface roughening and epitaxial thickness at low growth temperatures (100–300 °C)

N.‐E. Lee and J. E. Greene

Appl. Phys. Lett. 67, 2459 (1995); http://dx.doi.org/10.1063/1.114607 (3 pages) | Cited 5 times

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The Sb incorporation probability in homoepitaxial Si(001) films grown by ultrahigh vacuum ion‐beam sputter deposition at temperatures Ts between 100 and 300 °C was found, using quantitative secondary ion mass spectrometry, to be unity with no evidence of surface segregation. Surface roughnesses and epitaxial thicknesses te were measured by atomic force microscopy and cross‐sectional transmission electron microscopy, respectively, for both undoped and Sb‐doped Si layers. Sb doping was found to dramatically increase the rate of surface roughening and to decrease te by a factor of ≳2 at growth temperatures between 250 and 300 °C while having no measurable effect at lower temperatures. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

The elastic and piezoelectric properties of a lithium triborate single crystal

Y. Wang, Y. J. Jiang, Y. L. Liu, F. Y. Cai, and L. Z. Zeng

Appl. Phys. Lett. 67, 2462 (1995); http://dx.doi.org/10.1063/1.114608 (3 pages) | Cited 12 times

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From the velocity of sound measurements, obtained using Brillouin scattering and ultrasound techniques, the elastic and piezoelectric coefficients of lithium triborate (LiB3O5; LBO) single crystals have been determined. Based upon the sound propagation equations and above results, the slowness curves in (100), (010), and (001) crystalline planes are calculated and presented. Some properties of sound propagation and electromechanical coupling in the crystal are also discussed. © 1995 American Institute of Physics.
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77.65.Bn Piezoelectric and electrostrictive constants
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
77.65.Fs Electromechanical resonance; quartz resonators
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Thermally stable, low‐resistance PdGe‐based ohmic contacts to high–low doped n‐GaAs

J. S. Kwak, H. N. Kim, H. K. Baik, J.‐L. Lee, H. Kim, H. M. Park, and S. K. Noh

Appl. Phys. Lett. 67, 2465 (1995); http://dx.doi.org/10.1063/1.114609 (3 pages) | Cited 9 times

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Thermally stable, low‐resistance PdGe‐based ohmic contacts to high–low doped n‐GaAs have been developed. The lowest contact resistance obtained is two times lower than that of previously reported PdGe ohmic contacts. The contacts are thermally stable even after isothermal annealing for 5 h at 400 °C under atmosphere ambient. X‐ray diffraction results and Auger depth profiles show that the good PdGe‐based ohmic contact is due to the formation of both AuGa and TiO compounds. The AuGa compound enhances the creation of more Ga vacancies, followed by the incorporation of Ge into Ga vacancies, and the TiO compound suppresses As outdiffusion from the GaAs substrate, respectively. © 1995 American Institute of Physics.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts

Ultrathin SrTiO3 films prepared by chemical vapor deposition on Nb‐doped SrTiO3 substrates

Masahiro Kiyotoshi and Kazuhiro Eguchi

Appl. Phys. Lett. 67, 2468 (1995); http://dx.doi.org/10.1063/1.114610 (3 pages) | Cited 17 times

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The SrTiO3 ultrathin film capacitors were realized on Nb‐doped single‐crystal SrTiO3 substrates by chemical vapor deposition. The leakage current density of 10.4 nm thick SrTiO3 thin‐film capacitor was below 1×10−8 A/cm2 in the applied voltage range of −1.8 to +0.45 V, and its SiO2 equivalent thickness was 0.48 nm. The relative dielectric constant was over 160 for SrTiO3 thickness above 20 nm, but it decreased for SrTiO3 thickness below 20 nm. Dependence of leakage current on SrTiO3 film thickness was slight. These results could be explained by the existence of applied electric field concentration near the SrTiO3/electrode interface. © 1995 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
84.32.Tt Capacitors

Long‐time present tweedlike precursors and paraelectric clusters in ferroelectrics containing strong quenched randomness

Dwight Viehland, Myung‐Chul Kim, Z. Xu, and Jie‐Fang Li

Appl. Phys. Lett. 67, 2471 (1995); http://dx.doi.org/10.1063/1.114611 (3 pages) | Cited 58 times

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Transmission electron microscopy studies of the (1−x)Pb(Mg1/3Nb2/3)O3–(x)PbTiO3 [PMN‐PT (1‐x)/x] crystalline solution have been performed for x=0.1, 0.2, 0.35, and 0.60. Bright‐field imaging has revealed a common sequence of domainlike states with increasing x. Normal micron‐sized ferroelectric domains were found for x≳0.40. Tweedlike structures were found for x∼0.35. These tweedlike structures are similar to those previously reported in premartensitic states. Paraelectric clusters were found for x<0.30. The paraelectric cluster state was characterized by the lack of self‐assembly amongst embryos and the presence of relaxor behavior in the macroscopic response characteristics. The composition PMN‐PT 65/35 was then modified with La for a detailed study of the transition between the tweedlike precursor and paraelectric cluster states with increasing impurity content. © 1995 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
81.30.Kf Martensitic transformations

Infrared spectroscopy of adsorbed CO2 as a probe for the surface heterogeneity of diamond C(111)‐1×1:H

H.‐C. Chang and J.‐C. Lin

Appl. Phys. Lett. 67, 2474 (1995); http://dx.doi.org/10.1063/1.114612 (3 pages) | Cited 4 times

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Infrared polarization spectroscopy of the stretching motion of physisorbed CO2 has been used as a probe for the heterogeneity of hydrogen‐terminated diamond single crystal surfaces. At the substrate temperature of 83 K, band shape, photometry, and isotherm measurements all indicate that the CO2 molecules are first adsorbed on defect sites, followed by adsorption on terraces that yields a single sharp spectral feature at 2333 cm−1 with FWHM=6 cm−1. Nearly 20% of the surface sites on the as‐polished C(111)‐1×1:H surfaces are defects © 1995 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Dv Composition, segregation; defects and impurities

Specific conditions for Ni catalyzed carbon nanotube growth by chemical vapor deposition

Masako Yudasaka, Rie Kikuchi, Takeo Matsui, Yoshimasa Ohki, Susumu Yoshimura, and Etsuro Ota

Appl. Phys. Lett. 67, 2477 (1995); http://dx.doi.org/10.1063/1.114613 (3 pages) | Cited 71 times

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Chemical vapor deposition using 2‐methyl‐1,2′‐naphthyl ketone as a starting material has been done between 1000 and 600 °C on Ni particles with diameters ranging from 10 to 500 nm. The Ni particles were prepared by annealing Ni thin film deposited on quartz glass substrates. The size of the Ni particle was controlled by the thickness of the Ni film. Carbon nanotubes were obtained at 700 °C when the diameter of the Ni particles was about 20–30 nm. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Nonorthogonal twinning in thin film oxide perovskites

K. P. Fahey, B. M. Clemens, and L. A. Wills

Appl. Phys. Lett. 67, 2480 (1995); http://dx.doi.org/10.1063/1.114614 (3 pages) | Cited 21 times

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We have observed nonorthogonal twinning in thin film oxide perovskites. This twinning geometry is equivalent to a 60° rotation of the twinned crystallites about the [111] direction in an [001] oriented film. This twinning is not detectable by the standard x‐ray tests for film quality (a radial θ–2θ scan and a ϕ scan at a chi of 45°). In this study we observe this twinning in films of PbZrxTi1−xO3, BaTiO3, and SrRuO3 grown by sputtering and MOCVD on MgO and SrTiO3. These twins are observed in films deposited on a substrate with which there is a large lattice mismatch and in films that are deposited in an oxygen deficient environment. We propose that these twins result from plastic deformation associated with misfit accommodation and discuss the twin geometry and the nature of the twin interface. © 1995 American Institute of Physics.
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61.72.Mm Grain and twin boundaries
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Raman imaging with near‐field scanning optical microscopy

C. L. Jahncke, M. A. Paesler, and H. D. Hallen

Appl. Phys. Lett. 67, 2483 (1995); http://dx.doi.org/10.1063/1.114615 (3 pages) | Cited 62 times

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Raman spectroscopy in conjunction with near‐field scanning optical microscopy is used to image Rb‐doped KTiOPO4 within a spectral feature with high spatial resolution. We present Raman spectra as well as the first Raman images obtained in the near field. Differences between near‐field and far‐field Raman measurements are discovered and discussed. © 1995 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.30.-j Infrared and Raman spectra

InGaAsP/GaAs elastically strained quaternary solid solutions with high critical thicknesses grown by liquid phase epitaxy

Yu. B. Bolkhovityanov, A. S. Jaroshevich, N. V. Nomerotsky, M. A. Revenko, and E. M. Trukhanov

Appl. Phys. Lett. 67, 2486 (1995); http://dx.doi.org/10.1063/1.114616 (2 pages) | Cited 2 times

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Highly elastically strained films of InGaAsP solid solutions in 1.4–1.8 eV interval of band gaps were grown on GaAs(111)B substrates by liquid phase epitaxy. Elastic strains close to 1% are achieved. The determined critical thicknesses exceed the predictions of the energy equilibrium theory by Matthews and Blakeslee by as much as an order of magnitude. © 1995 American Institute of Physics.
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62.20.-x Mechanical properties of solids
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.-a Thin film structure and morphology

Near band‐edge photoluminescence in relaxed Si1−xGex layers

L. P. Tilly, P. M. Mooney, J. O. Chu, and F. K. LeGoues

Appl. Phys. Lett. 67, 2488 (1995); http://dx.doi.org/10.1063/1.114617 (3 pages) | Cited 22 times

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Near band‐gap photoluminescence was observed at low temperatures from relaxed Si1−xGex layers with 0.17<x<0.32 grown on Si(001) by ultrahigh vacuum chemical vapor deposition. The luminescence from undoped samples was dominated at low temperature and low excitation densities by recombination of excitons bound to alloy fluctuations exhibiting the smallest full width at half‐maximum, 2.44 meV, reported for relaxed epitaxial Si1−xGex layers. Excitons bound to phosphorous and boron were also observed as was free exciton recombination. © 1995 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.55.Hx Other solid inorganic materials

Possible evidence of quantum size effects in x‐ray photoemission spectra of ultrathin Si layers

N. Dibiase, G. Gabetta, A. Lumachi, M. Scagliotti, and F. Parmigiani

Appl. Phys. Lett. 67, 2491 (1995); http://dx.doi.org/10.1063/1.114618 (3 pages) | Cited 4 times

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This letter reports the experimental evidence of a 2.3 eV blue shift of the plasmon loss lines observed in the x‐ray photoelectron spectra of an ultrathin Si layer equivalent to 1.5×1015  at./cm2 deposited onto a randomly oriented Al2O3 single crystal. The plasmon line shifts, which is roughly proportional to the deposited Si(mass)−2/3, are attributed to quantum confinement effects in agreement with electron energy loss measurements performed on nanosized Si particles. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
79.60.Dp Adsorbed layers and thin films

Bistable locking of single‐electron tunneling elements for digital circuitry

R. A. Kiehl and T. Ohshima

Appl. Phys. Lett. 67, 2494 (1995); http://dx.doi.org/10.1063/1.114436 (3 pages) | Cited 11 times

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Bistable phase locking of single‐electron tunneling oscillations is proposed as the basis for digital logic circuitry. A simple model of single‐electron tunneling is used to examine the locking of capacitively coupled junctions pumped at twice the tunneling frequency and activated by clocking the dc bias. The locking to sinusoidal input signals and the locking between coupled junctions is examined. It is shown that bistable locking exhibits an input amplitude threshold and phase noise margin and that junctions rapidly lock in antiphase due to a strong interaction between tunneling events. Conditions under which the operation is potentially useful for digital circuitry are identified. © 1995 American Institute of Physics.
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73.40.Gk Tunneling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

High rate dry etching of InGaP in BCl3 plasma chemistries

F. Ren, W. S. Hobson, J. R. Lothian, J. Lopata, J. A. Caballero, S. J. Pearton, and M. W. Cole

Appl. Phys. Lett. 67, 2497 (1995); http://dx.doi.org/10.1063/1.114437 (3 pages) | Cited 27 times

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A remarkable increase in InGaP etch rate in electron cyclotron resonance BCl3 discharges is observed as the microwave power is increased from 250 W (etch rate ∼500 Å/min) to 1000 W (etch rate ∼8000 Å/min). The surface roughness measured by atomic force microscopy decreases from 36 nm at 250 W to 2 nm at 1000 W. The high ion flux incident on the InGaP at high microwave powers appears to remove InClx species by sputter‐assisted desorption and prevents formation of the nonstoichiometric In‐rich surfaces generally observed with Cl2‐based dry etching using conventional reactive ion etching. © 1995 American Institute of Physics.
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81.65.-b Surface treatments

Effect of hydrogen on the surface‐diffusion length of Ga adatoms during molecular‐beam epitaxy

Y. Morishita, Y. Nomura, S. Goto, and Y. Katayama

Appl. Phys. Lett. 67, 2500 (1995); http://dx.doi.org/10.1063/1.114438 (3 pages) | Cited 15 times

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Systematic measurements were carried out on the surface‐diffusion length of Ga adatoms during the molecular‐beam epitaxy of GaAs in the presence of hydrogen atoms (H⋅) or hydrogen molecules (H2). The spatial variation of the growth rate on the (100) surface adjacent to the (111)A surface was measured from the period of the reflection high‐energy electron diffraction (RHEED) intensity oscillations using in situ scanning microprobe RHEED. The surface‐diffusion length of Ga adatoms, which was derived from the spatial variation of the growth rate, becomes larger along with an increase in the H⋅ or H2 pressure. It also increases as the substrate temperature is raised under H⋅ or H2 pressure. The diffusion length in the case of H⋅ introduction is larger than that in the case of H2 introduction. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
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