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30 Oct 1995

Volume 67, Issue 18, pp. 2585-2740

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Multimode fiber‐optic sensor using photorefractive double phase conjugator

Alexei A. Kamshilin, Timo Jaaskelainen, A. V. Khomenko, and A. Garcia‐Weidner

Appl. Phys. Lett. 67, 2585 (1995); http://dx.doi.org/10.1063/1.115139 (3 pages) | Cited 7 times

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An optical sensing scheme for measuring the mode phase shifts and mode amplitude modulation in a multimode fiber is proposed. The scheme uses a double phase conjugator based on photorefractive fiberlike Bi12TiO20 (BTO) crystal that allows to detect high speed changes of environmental conditions with adaptation for slow variations. An acoustic sensor based on the proposed scheme is used to demonstrate the scheme’s feasibility. © 1995 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.81.Cn Fiber testing and measurement of fiber parameters

An electro‐optically controlled liquid crystal diffraction grating

J. Chen, P. J. Bos, H. Vithana, and D. L. Johnson

Appl. Phys. Lett. 67, 2588 (1995); http://dx.doi.org/10.1063/1.115140 (3 pages) | Cited 68 times

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A structure for an electro‐optically controlled liquid crystal diffraction grating is proposed, which can dramatically simplify the fabrication process of liquid crystal optical gratings. The structure consists of two alternating stripes. Each stripe is a hybrid liquid crystal cell with adjacent stripes oriented perpendicularly. This kind of electro‐optically controlled diffraction grating in principle gives 100% diffraction efficiency and no polarization direction dependence. The detailed fabrication process is presented. © 1995 American Institute of Physics.
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42.70.Df Liquid crystals
42.79.Kr Display devices, liquid-crystal devices

3.2 μm infrared resonant cavity light emitting diode

E. Hadji, J. Bleuse, N. Magnea, and J. L. Pautrat

Appl. Phys. Lett. 67, 2591 (1995); http://dx.doi.org/10.1063/1.115141 (3 pages) | Cited 26 times

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A CdHgTe resonant cavity light emitting diode is proposed as a new infrared emitter. The device consists of a bottom Bragg reflector of 86% reflectivity, a half‐wavelength cavity, n doped at the beginning (1018 cm−3) and p doped at the end (1018 cm−3), containing an active layer at the antinode position, and a top gold mirror of 95% reflectivity which also serves as an Ohmic contact. The emission spectrum shows a narrow peak of 8 meV full width at half‐maximum (FWHM) at 300 K, which is much less than the inhomogeneous linewidth of CdHgTe quantum wells (QWs). This electroluminescent peak matches very well the cavity resonance wavelength and FWHM, as given by transmission measurements of the unbiased cavity. The directivity is also improved by the cavity effect. Thus, we have demonstrated that even a relatively low Q microcavity can greatly enhance the characteristics of an infrared emitter in the 2–5 μm range. © 1995 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Hf II-VI semiconductors
85.60.Jb Light-emitting devices

Spontaneous coupling to planar and index‐confined quasimodes of Fabry–Pérot microcavities

D. L. Huffaker and D. G. Deppe

Appl. Phys. Lett. 67, 2594 (1995); http://dx.doi.org/10.1063/1.115142 (3 pages) | Cited 9 times

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Data are presented characterizing the spontaneous coupling to both planar and index‐confined quasimodes of Fabry–Pérot microcavities. Index confinement is achieved using selective conversion of AlAs–AlxOy through ‘‘wet’’ oxidation to fabricate lateral cavity sizes as small as 2 μm diam. Spectral tuning and angular radiation patterns show the increased spontaneous coupling that results from three‐dimensional confinement. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.Jb Light-emitting devices

Origins and effects of thermal processes on near‐field optical probes

A. H. La Rosa, B. I. Yakobson, and H. D. Hallen

Appl. Phys. Lett. 67, 2597 (1995); http://dx.doi.org/10.1063/1.115143 (3 pages) | Cited 40 times

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An aluminum‐coated tapered fiber probe, as used in near‐field scanning optical microscopy (NSOM), is heated by the light coupled into it. This can destroy the probe or may modify the sample, which can be problematic or used as a tool. To study these thermal effects, we couple modulated visible light of various power through probes. Simultaneously coupled infrared light senses the thermal effects. We report their magnitude, their spatial and temporal scales, and real‐time probe damage observations. A model describes the experimental data, the mechanisms for induced IR variation, and their relative importance. © 1995 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
42.81.Wg Other fiber-optical devices
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Normal incident InGaAs/GaAs multiple quantum well infrared detector using electron intersubband transitions

Gamani Karunasiri, Jin Suk Park, John Chen, Robert Shih, J. F. Scheihing, and M. A. Dodd

Appl. Phys. Lett. 67, 2600 (1995); http://dx.doi.org/10.1063/1.115144 (3 pages) | Cited 25 times

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A normal incident infrared detector has been fabricated using electron intersubband transition in a InGaAs/GaAs quantum well structure. With the light polarized in the plane of the layers (normal incident) a nominally forbidden absorption peak was observed. Such an absorption is most likely a result of spin‐flip intersubband transitions induced by the spin‐orbit coupling. In addition, for the light polarized in the plane of incidence, the usual intersubband absorption due to envelope function transition is observed. The responsivity of 0.2 A/W was obtained for the normal incident infrared on the detector. This work demonstrates the fabrication of high sensitivity quantum well infrared detectors operating in the normal incident mode without fabricating grating structures on the device for focal plane applications. © 1995 American Institute of Physics.
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78.66.Fd III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Strong blueshift of the excitonic transition in the InGaAs/InP/InAsP antisymmetric coupled quantum wells

Yimin Huang, Yimin Chen, and Chenhsin Lien

Appl. Phys. Lett. 67, 2603 (1995); http://dx.doi.org/10.1063/1.114309 (3 pages) | Cited 5 times

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A new strained InGaAs/InP/InAsP antisymmetric coupled‐quantum‐well (CQW) structure with significant enhancement of the blue and red Stark effects in the first heavy‐hole‐to‐electron excitonic transition is proposed in this letter. The calculated amount of blueshift is about 48 meV as the applied electric field varied from 0 to 90 kV/cm and the red Stark shift of about 56 meV can be achieved with an applied electric field in the 0 to −90 kV/cm range. The results of the strong Stark effect in the antisymmetric CQW structure may have potential applications in sophisticated new electronic devices, such as optical switching devices and tunable lasers. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors

Characterization of ion behavior in Ti cathode N2 vacuum arc using plane probe diagnostics and spectroscopic measurements

Mamoru Sakaki and Tateki Sakakibara

Appl. Phys. Lett. 67, 2606 (1995); http://dx.doi.org/10.1063/1.114310 (3 pages) | Cited 4 times

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This study characterizes ion behavior of cathodic arc plasmas which have been used for the TiN coating. The ion currents are measured using a plane probe. The probe plane is vertical and parallel to the arc axis. Spectral intensities of Ti+ and Ti++ ions are also measured as a function of pressure (0.01–30 Pa). As a result of these measurements, it was found that at pressures below 0.1 Pa, the predominant ions in the plasma are Ti++ which have a tendency to be directional or to have a beam component, whereas at pressures above 0.1 Pa, mainly Ti+ ions of random motion are present. © 1995 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Field evaporation of gold atoms onto a silicon dioxide film by using an atomic force microscope

Hajime Koyanagi, Sumio Hosaka, Ryo Imura, and Masataka Shirai

Appl. Phys. Lett. 67, 2609 (1995); http://dx.doi.org/10.1063/1.114311 (3 pages) | Cited 20 times

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To investigate whether field evaporation of gold atoms is responsible for dot formation in an atomic force microscope (AFM) gold‐coated tip/vacuum/SiO2 film/p‐type Si substrate configuration, we have performed elemental analysis of the dots and measured the dependence of the threshold voltage on SiO2 thickness with both polarities for the dot formation. The experiments demonstrate that it is feasible to form gold dots on SiO2 films 17–107 Å thick by adjusting the pulsed voltages applied to the gold‐coated AFM tip. Energy dispersive x‐ray spectroscopy (EDX) shows that the dots include gold. The threshold voltages increase almost linearly with the SiO2 thickness. Furthermore, the voltage with negative polarity is lower than that with positive polarity. These results provide evidence that the dot formation on the SiO2 film using AFM occurs by field evaporation. © 1995 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.65.-b Surface treatments
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Thermal stability and superlattice formation of sputtered platinum/alumina multilayers

Ch. Morawe and H. Zabel

Appl. Phys. Lett. 67, 2612 (1995); http://dx.doi.org/10.1063/1.114312 (3 pages) | Cited 7 times

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By high‐frequency sputtering techniques we prepared high‐quality platinum/alumina artificial multilayers (Pt/Al2O3) with interface roughnesses below 0.2 nm and x‐ray reflectivities close to 100% at the first satellite reflection using a wavelength of 0.1542 nm. The multilayer structure remains stable up to at least 700 °C without loss in reflectivity. Further annealing causes a structural phase transition with the formation of a coherent superlattice structure, which is finally destroyed at 1000 °C. © 1995 American Institute of Physics.
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68.35.Md Surface thermodynamics, surface energies
68.60.Dv Thermal stability; thermal effects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Atomic‐scale formation of ultrasmooth surfaces on sapphire substrates for high‐quality thin‐film fabrication

M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, and A. Miyamoto

Appl. Phys. Lett. 67, 2615 (1995); http://dx.doi.org/10.1063/1.114313 (3 pages) | Cited 138 times

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The atomically ultrasmooth surfaces with atomic steps of sapphire substrates were obtained by annealing in air at temperatures between 1000 and 1400 °C. The terrace width and atomic step height of the ultrasmooth surfaces were controlled on an atomic scale by changing the annealing conditions and the crystallographic surface of substrates. The obtained ultrasmooth surface was stable in air. The topmost atomic structure of the terrace was examined quantitatively by atomic force microscopy and ion scattering spectroscopy as well as a theoretical approach using molecular dynamics simulations. © 1995 American Institute of Physics.  
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments

Slip systems in C60 single crystals

M. Tachibana, H. Sakuma, M. Michiyama, and K. Kojima

Appl. Phys. Lett. 67, 2618 (1995); http://dx.doi.org/10.1063/1.114314 (3 pages) | Cited 6 times

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A behavior of plastic deformations of C60 single crystals was examined using the microindentation technique. Not only slip lines but also dislocation etch pits were observed around the indentation on the crystal surface. It is confirmed that the slip systems in C60 single crystals are {111}〈110〉 in a temperature range of 240 K to 450 K. This means that, even in a simple cubic phase below a phase transition temperature of ∼260 K, the slip systems are the same as a face‐centered‐cubic phase. © 1995 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
62.20.F- Deformation and plasticity

X‐ray photoemission study of the interface formation between calcium and self‐assembled alkanethiol monolayers

H. Razafitrimo, E. Ettedgui, L.‐H. Guo, G. L. McLendon, and Y. Gao

Appl. Phys. Lett. 67, 2621 (1995); http://dx.doi.org/10.1063/1.114315 (3 pages) | Cited 13 times

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We have investigated the interface formation of Ca with an alkanethiol CH3(CH3)17SH monolayer self‐assembled onto gold‐coated silicon. Deposited Ca neither diffused into nor interacted chemically with the monolayer. Core‐level shift and work function changes were observed in the monolayer as soon as Ca was deposited and they were stabilized after 8 Å of Ca coverage. The shifts are interpreted in terms of charge transfer from Ca to the monolayer, creating a dipole layer at the interface. © 1995 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Charge accumulation effects and microwave absorption of coplanar waveguides fabricated on high–resistivity Si with SiO2 insulation layer

T. Pfeifer, H.–M. Heiliger, E. Stein von Kamienski, H. G. Roskos, and H. Kurz

Appl. Phys. Lett. 67, 2624 (1995); http://dx.doi.org/10.1063/1.114316 (3 pages) | Cited 2 times

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Microwave attenuation of coplanar waveguides fabricated on high–resistivity silicon substrates with SiO2 insulation layer is investigated from 10 GHz up to 600 GHz by optoelectronic time–domain measurements. They are performed directly on the wafer employing a freely positionable photoconductive switch for picosecond–electric–pulse injection and an electro–optic crystal for pulse detection. The attenuation is significantly altered over the whole frequency range by free–carrier absorption resulting from inversion and accumulation effects at the Si/SiO2 interface. © 1995 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
73.40.Sx Metal-semiconductor-metal structures
84.40.-x Radiowave and microwave (including millimeter wave) technology

Avalanche transients in shallow p‐n junctions biased above breakdown

A. Lacaita, A. Spinelli, and S. Longhi

Appl. Phys. Lett. 67, 2627 (1995); http://dx.doi.org/10.1063/1.114317 (3 pages) | Cited 9 times

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We have studied the avalanche dynamics in shallow junction avalanche diodes designed for detection and timing of single photons. Space charge effects have been correctly taken into account, and both electron and hole transport were considered. Based on the results of the detailed computer simulation we have developed a simplified model of the detector which can be used for studying the avalanche transient in these devices and for optimizing the detector structure for the best timing performance. The results are in good agreement with the experiments. © 1995 American Institute of Physics.
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85.30.De Semiconductor-device characterization, design, and modeling
85.60.Dw Photodiodes; phototransistors; photoresistors

Molecular beam epitaxy of pseudomorphic silicon/carbon superlattices on silicon substrates

W. Faschinger, S. Zerlauth, J. Stangl, and G. Bauer

Appl. Phys. Lett. 67, 2630 (1995); http://dx.doi.org/10.1063/1.114318 (3 pages) | Cited 14 times

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We describe the molecular beam epitaxy growth of superlattices where silicon layers with a thickness between 3 and 10 nm alternate with very thin carbon layers. High resolution x‐ray diffraction reveals that the superlattices are of excellent crystalline quality and are pseudomorphic with respect to the silicon substrate. From a dynamical simulation of the diffraction spectra we conclude that the nominal carbon layers are in fact silicon–carbon alloys with a carbon content up to 50%. Given the large lattice mismatch of more than 10% of such an alloy to the silicon substrate, astonishingly thick superlattices with up to 100 periods can be grown without lattice relaxation. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Interdiffusion induced enhancement of one‐dimensional level separation in quantum wires

J. M. Sallese, J. F. Carlin, M. Gailhanou, and P. Grunberg

Appl. Phys. Lett. 67, 2633 (1995); http://dx.doi.org/10.1063/1.114319 (3 pages) | Cited 5 times

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We have calculated the effect of alloy interdiffusion on the one‐dimensional energy confinement of (Al,Ga)As/GaAs crescent shaped quantum wire structures. We show that the energy splitting between excited states may be greatly enhanced by the interdiffusion mechanism. © 1995 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

High‐performance camel‐gate field effect transistor using high‐medium‐low doped structure

Wen‐Shiung Lour, Wen‐Chau Liu, Jung‐Hui Tsai, and Lih‐Wen Laih

Appl. Phys. Lett. 67, 2636 (1995); http://dx.doi.org/10.1063/1.114320 (3 pages) | Cited 7 times

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We report an improved camel‐gate field effect transistor using a high‐medium‐low doped channel. A 1000‐Å‐thick n=1×1017 cm−3 GaAs layer is employed to form the camel gate, which prevents the planar‐doped barrier from being dropped abruptly. In addition to transition channel, a thin (200 Å) heavily doped (n=5×1017 cm−3) GaAs layer works as the main active channel to enhance the current drivability and transconductance. For our 1.5×100 μm2 device, the maximum current density of over 850 mA/mm was obtained. Moreover, an enhanced voltage‐independent transconductance was also observed. Generally, the device exhibits a transconductance of 220 mS/mm which is compatible to that of MESFETs and is two‐ or threefold to that of reported camel‐gate FETs. In addition, the proposed device demonstrates a large gate voltage swing for high transconductance operation. Due to the excellent device performance, our devices do hold promise for both large signal and digital circuits application, simultaneously. © 1995 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Realization and modeling of a pseudomorphic (GaAs1−xSbx–InyGa1−yAs)/GaAs bilayer‐quantum well

M. Peter, K. Winkler, M. Maier, N. Herres, J. Wagner, D. Fekete, K. H. Bachem, and D. Richards

Appl. Phys. Lett. 67, 2639 (1995); http://dx.doi.org/10.1063/1.114321 (3 pages) | Cited 40 times

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We have realized a (GaAs1−xSbx‐InyGa 1−yAs)/GaAs bilayer‐quantum well (BQW), which consists of two adjacent pseudomorphic layers of GaAs1−xSbx and InyGa1−yAs sandwiched between GaAs barriers. Photoluminescence was observed at longer wavelengths than those found for corresponding InyGa1−yAs/GaAs and GaAs1−xSbx/GaAs single quantum wells (SQW), which indicates a type‐II band alignment in the BQW. The longest 300 K emission wavelength achieved so far was 1.332 μm. For an accurate determination of the band offset between GaAs1−xSbx and GaAs, required for a theoretical modeling of the interband transition energies of these BQWs, a large set of GaAs1−xSbx /GaAs SQWs was prepared from which a type‐II band alignment was deduced, with the valence band discontinuity ratio Qv found to depend on the Sb concentration x (Qv=1.76+1.34 x). With this parameter it was possible to calculate the expected interband transition energies in a BQW structure without any adjustable parameters. The calculations are in agreement with experimental data within a range of ±4%. © 1995 American Institute of Physics.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors

Direct observation for the reduction of exciton binding energy induced by perpendicular electric field

Kejian Luo, Houzhi Zheng, Shijie Xu, Penghua Zhang, Wei Zhang, and Xiaoping Yang

Appl. Phys. Lett. 67, 2642 (1995); http://dx.doi.org/10.1063/1.114322 (3 pages) | Cited 1 time

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We experimentally study the effect of perpendicular electric field on the exciton binding energy using a specially designed step quantum well. From photoluminescence spectra at the temperature of 77 K, we have directly observed remarkable blueshift of the exciton peak due to the transition from spatially direct to spatially indirect excitons induced by electric field. © 1995 American Institute of Physics.
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71.35.-y Excitons and related phenomena
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.55.Cr III-V semiconductors

8–13 μm InAsSb heterojunction photodiode operating at near room temperature

J. D. Kim, S. Kim, D. Wu, J. Wojkowski, J. Xu, J. Piotrowski, E. Bigan, and M. Razeghi

Appl. Phys. Lett. 67, 2645 (1995); http://dx.doi.org/10.1063/1.114323 (3 pages) | Cited 21 times

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p+‐InSb/π‐InAs1−xSbx/n+‐InSb heterojunction photodiodes operating at near room temperature in the 8–13 μm region of infrared (IR) spectrum are reported. A room‐temperature photovoltaic response of up to 13 μm has been observed at 300 K with an x≊0.85 sample. The voltage responsivity‐area product of 3×10−5 V cm2/W has been obtained at 300 K for the λ=10.6 μm optimized device. This was close to the theoretical limit set by the Auger mechanism, with a detectivity at room temperature of ≊1.5×108 cm Hz1/2/W. © 1995 American Institute of Physics.
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78.66.Fd III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Cathodoluminescence studies of growth and process‐induced defects in bulk gallium antimonide

B. Méndez, P. S. Dutta, J. Piqueras, and E. Dieguez

Appl. Phys. Lett. 67, 2648 (1995); http://dx.doi.org/10.1063/1.114324 (3 pages) | Cited 20 times

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The homogeneity and luminescence properties of undoped bulk GaSb have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. CL images have revealed a nonuniform distribution of native defects in GaSb wafers prepared from as‐grown single crystals. Postgrowth annealing in vacuum, gallium, and antimony atmospheres has been performed to obtain more accurate information about the defect structure in this material. In general, on annealing, homogeneous distribution of impurities is observed throughout the wafers. CL spectra show that a luminescence band (centered at 756 meV) is enhanced by annealing in a gallium atmosphere, suggesting that Ga atoms play an important role in the formation of this acceptor center. The 756 meV peak has been attributed to a transition from conduction band to an acceptor center comprised of GaSb or a related complex. Interestingly, localized crystallization at the subgrain boundaries seems to occur by annealing in Ga atmosphere. © 1995 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
71.55.Eq III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence

High‐temperature diamond p‐n junction: B‐doped homoepitaxial layer on N‐doped substrate

T. H. Borst, S. Strobel, and O. Weis

Appl. Phys. Lett. 67, 2651 (1995); http://dx.doi.org/10.1063/1.114325 (3 pages) | Cited 10 times

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Boron‐doped homoepitaxial layers have been selectively grown on synthetic type Ib substrates of (100) cut. Ohmic contacts were formed by evaporating a Mo/Pt/Au sandwich and subsequent annealing at 950°C for h. Current–voltage characteristics of diode type could be taken in vacuum in the temperature range 360–900 °C. Green light emission due to electroluminescence was observed from the junction area showing a maximum at a wavelength of 534 nm corresponding to a photon energy of 2.32 eV. The normalized emission spectrum was measured over the temperature range 320–440 °C with the device in air and was found independent of temperature and boron concentration. © 1995 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Jb Light-emitting devices

Ideal hydrogen termination of Si(001) surface by wet‐chemical preparation

Yukinori Morita and Hiroshi Tokumoto

Appl. Phys. Lett. 67, 2654 (1995); http://dx.doi.org/10.1063/1.114326 (3 pages) | Cited 42 times

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A nearly ideal Si(001) surface was prepared by a wet‐chemical method with a solution of HF:HCl=1:19 (pH<1). The surface was examined by scanning tunneling microscopy and was found to be covered by the uniform dihydride phase. Its successful preparation was the direct consequence of the following facts: The suppression of the (111) facet formation due to a low concentration of OH ions in the etchant solution and the stabilization of the surfaces structure due to the formation of the ordered steps. © 1995 American Institute of Physics.
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81.65.-b Surface treatments

Study of Schottky barriers on n‐type GaN grown by low‐pressure metalorganic chemical vapor deposition

J. D. Guo, M. S. Feng, R. J. Guo, F. M. Pan, and C. Y. Chang

Appl. Phys. Lett. 67, 2657 (1995); http://dx.doi.org/10.1063/1.114327 (3 pages) | Cited 81 times

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Schottky barriers on n‐type GaN films grown by low‐pressure metalorganic chemical vapor deposition are characterized and derived. A thin Pt or a Pd layer is deposited by electron‐gun evaporation to form Schottky contacts in a vacuum below 1×10−6 Torr. The Schottky barrier heights of Pt on the n‐GaN film are determined to be 1.04 and 1.03 eV by current–voltage (C–V) and current density–temperature (J–T) measurements, respectively. Also based on C–V and J–T measurements, the measured barrier height of Pd on n‐GaN is 0.94 and 0.91 eV, respectively. Schottky characteristics of Pt and Pd observed in the experiment are compared with those of Au and Ti in previous reports. © 1995 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
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