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6 Nov 1995

Volume 67, Issue 19, pp. 2753-2887

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Four‐wave mixing efficiency in traveling wave semiconductor optical amplifiers at high saturation

A. D’Ottavi, A. Mecozzi, S. Scotti, F. Cara Romeo, F. Martelli, P. Spano, R. Dall’Ara, J. Eckner, and G. Guekos

Appl. Phys. Lett. 67, 2753 (1995); http://dx.doi.org/10.1063/1.114582 (3 pages) | Cited 18 times

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We report an experimental investigation of the conversion efficiency of a frequency converter based on four‐wave mixing in semiconductor optical amplifiers. We find that the maximum of conversion efficiency has a nonlinear dependence on the unsaturated gain of the device. The observed features are explained by the presence of the Auger and bimolecular recombination. © 1995 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Infrared electro‐optical modulators based on field‐induced Γ‐L intervalley transfer

J. R. Meyer, C. A. Hoffman, F. J. Bartoli, and L. R. Ram‐Mohan

Appl. Phys. Lett. 67, 2756 (1995); http://dx.doi.org/10.1063/1.114583 (3 pages) | Cited 9 times

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Electro‐optical modulators based on intersubband transitions induced by normal‐incidence radiation in GaSb‐AlSb‐family asymmetric double quantum wells are proposed. An applied field transfers electrons from Γ‐valley states in one well to L‐valley states in the other well, thereby radically altering the selection rules, resonance energies, and in‐plane effective masses. © 1995 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects
78.66.Fd III-V semiconductors

Voltage‐induced color‐selective absorption with surface plasmons

Yu Wang

Appl. Phys. Lett. 67, 2759 (1995); http://dx.doi.org/10.1063/1.114584 (3 pages) | Cited 22 times

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A phenomenon of voltage‐induced color‐selective absorption at metal/liquid crystal interface with surface plasmons is reported. When a white light is incident at a metal/liquid crystal interface, those photons in surface plasmon resonance frequency range are totally absorbed and the reflected light shows the complementary color. If a voltage is used to change the refraction index of the liquid crystal, then the surface plasmon resonance frequency will change, and the reflected light will also show the color change. The reflectance spectrum is calculated from a well‐known solution to the boundary value problem in optics. Good agreement with the observations is obtained. This phenomenon could lead to a new generation of display devices. © 1995 American Institute of Physics.  
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42.25.-p Wave optics
42.79.Kr Display devices, liquid-crystal devices
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

High power gain‐switched diode laser master oscillator and amplifier

M. Poelker

Appl. Phys. Lett. 67, 2762 (1995); http://dx.doi.org/10.1063/1.114585 (3 pages) | Cited 14 times

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A tapered‐stripe, traveling‐wave semiconductor optical amplifier was seeded with 3.3 mW of gain‐switched diode laser light to obtain over 200 mW average power with pulse widths≊105 ps full width at half‐maximum (FWHM) and a pulse repetition rate of 499 MHz corresponding to a peak power of 3.8 W. Shorter pulse widths were obtained when the amplifier was driven with less current at the expense of reduced output power. Pulse widths as short as 31 ps FWHM and an average power of 98 mW corresponding to a peak power of 6.3 W were obtained when a different, lower power seed laser was used. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Real‐time pole and probe assessment of orientational processes in electro‐optic polymers

F. Michelotti, E. Toussaere, R. Levenson, J. Liang, and J. Zyss

Appl. Phys. Lett. 67, 2765 (1995); http://dx.doi.org/10.1063/1.114586 (3 pages) | Cited 19 times

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The electro‐optic properties of polymer films are measured by an original technique whereby a periodic sequence of poling and probing steps permits alternation of the application of orientation and dephasing potentials. Relaxation dynamics of the electro‐optic coefficient of Red–Acid–Magly crosslinkable polymer films is studied as a function of the temperature of the samples. The time constant of the decay τ as measured at several temperatures is found to follow a Vogel–Fulcher–Tamann—Hesse dependence, for temperatures above glass transition. Poling the samples in the presence of a pulsed electric field leads to a r33 electro‐optic coefficient as high as 6 pm/V. © 1995 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
42.70.Jk Polymers and organics
77.84.Jd Polymers; organic compounds

Electroabsorption enhancement in disordered, strained InGaAs/GaAs quantum well

Joseph Micallef, E. Herbert Li, and Bernard L. Weiss

Appl. Phys. Lett. 67, 2768 (1995); http://dx.doi.org/10.1063/1.114587 (3 pages)

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The results of modeling the application of an external electric field to disordered, strained InGaAs/GaAs single quantum well are presented. An error function profile is used to model the constituent atoms composition after interdiffusion. Results indicate that the exciton Stark shift in the disordered quantum well is greater than in the as‐grown 10 nm wide In0.2Ga0.8As well, and that the change in electroabsorption near the fundamental exciton absorption peak is enhanced by 30% in the disordered quantum well for a 30 kV/cm electric field applied perpendicular to the well. These results may be used to achieve optical modulators with improved performance characteristics in strained quantum well structures. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.20.Jq Electro-optical effects
78.66.Fd III-V semiconductors

On the heating of the fiber tip in a near‐field scanning optical microscope

D. I. Kavaldjiev, R. Toledo‐Crow, and M. Vaez‐Iravani

Appl. Phys. Lett. 67, 2771 (1995); http://dx.doi.org/10.1063/1.114588 (3 pages) | Cited 25 times

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Variation of the reflectance of the aluminized tip of a near‐field scanning optical microscope is used to measure the temperature rise due the confinement of light in the tip. The measurement technique involves a pump‐probe beam approach, and uses a two‐step process which eliminates the need to know the dependence of the signal on the scattering cross section of the tip. © 1995 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes

Effects of finite temporal duration on spatial solitons in a planar optical waveguide

Shan‐liang Liu, Wen‐zheng Wang, and Jing‐zhi Xu

Appl. Phys. Lett. 67, 2774 (1995); http://dx.doi.org/10.1063/1.114589 (3 pages) | Cited 1 time

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The effects of finite temporal duration on the spatial solitons in a planar optical waveguide are analyzed. The results show that (i) the self‐trapped pulses with finite temporal duration are unstable and collapse at higher peak power in a planar optical waveguide with the anomalous group velocity dispersion (GVD), but the collapse does not occur in a planar optical waveguide with the normal GVD; (ii) the spatial soliton with finite temporal duration has a transverse velocity which is proportional to the spatial width and inversely proportional to the temporal duration of the soliton, and the bright spatiotemporal solitons do not form multiple soliton bound states; and (iii) the peak power required for self‐trapping of the pulse in a planar optical waveguide with the normal GVD is less than the critical peak power for collapse of the pulses in a planar optical waveguide with the anomalous GVD. © 1995 American Institute of Physics.
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42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.82.Et Waveguides, couplers, and arrays

Very low threshold 1.55 μm grating coupled surface‐emitting lasers for optical signal processing and interconnect

F. S. Choa, M. H. Shih, J. Y. Fan, G. J. Simonis, P.‐L. Liu, T. Tanbun‐Ek, R. A. Logan, W. T. Tsang, and A. M. Sergent

Appl. Phys. Lett. 67, 2777 (1995); http://dx.doi.org/10.1063/1.114590 (3 pages) | Cited 3 times

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We report in this work a record low threshold (∼4 mA, cw), 1.55 μm wavelength, grating‐coupled surface‐emitting laser (GCSEL) which rivals all other existing SELs in the 1.3 or/and 1.55 μm regions. Methods to improve the asymmetric far‐field patterns and to obtain even lower threshold SELs are also demonstrated and/or suggested. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Instabilities and chaos in optically injected semiconductor lasers

V. Kovanis, A. Gavrielides, T. B. Simpson, and J. M. Liu

Appl. Phys. Lett. 67, 2780 (1995); http://dx.doi.org/10.1063/1.114591 (3 pages) | Cited 59 times

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We have experimentally obtained and theoretically analyzed a systematic map of the various instabilities induced in a semiconductor laser subject to strong optical injection as the amount of optical injection power and frequency detuning is varied. Two distinct islands of chaos have been identified in the injection‐locked region. They are separated by regions of period one and period two solutions. Spontaneous emission noise obscures the observation of high periodic orbits. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Mi Dynamical laser instabilities; noisy laser behavior

Single‐lobed far‐field radiation pattern from surface‐emitting complex‐coupled distributed‐feedback diode lasers

Masoud Kasraian and Dan Botez

Appl. Phys. Lett. 67, 2783 (1995); http://dx.doi.org/10.1063/1.114592 (3 pages) | Cited 5 times

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Theoretical analysis of surface‐emitting complex‐coupled distributed‐feedback (SE‐CC‐DFB) lasers with a second‐order grating reveals that operation in a single‐lobed, orthonormal beam can be fundamentally favored. This happens when the modal‐gain difference between symmetric and antisymmetric modes due to the optical‐field (longitudinal) overlap with the gain/loss grating overcomes the modal‐gain difference based on radiation losses. The analysis is performed for a simple three‐layer structure with gain placed in the high‐index regions (i.e., in‐phase, second‐order CC‐DFB). Lasing at or near the Bragg frequency provides essentially uniform near‐field patterns, thus immunizing the device to gain spatial hole burning. The results and their implications are discussed. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Explanation of stretched exponential growth behavior

Kwangjoon Kim and Arthur J. Epstein

Appl. Phys. Lett. 67, 2786 (1995); http://dx.doi.org/10.1063/1.114593 (3 pages) | Cited 8 times

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We show that the photoinduced defect population growth of an optically thick film may have stretched exponential time dependence if the defect does not decay nor diffuse within the time scale of the experiment. After the formulation of this simple model, low‐temperature photoinduced absorption of polyaniline is described as an example. © 1995 American Institute of Physics.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.47.-p Spectroscopy of solid state dynamics

Multiwavelength excitation by vacuum‐ultraviolet beams coupled with fourth harmonics of a Q‐switched Nd:YAG laser for high‐quality ablation of fused quartz

K. Sugioka, S. Wada, H. Tashiro, K. Toyoda, Y. Ohnuma, and A. Nakamura

Appl. Phys. Lett. 67, 2789 (1995); http://dx.doi.org/10.1063/1.114594 (3 pages) | Cited 20 times

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Simultaneous irradiation of multiwavelength beams emitted from a vacuum‐ultraviolet (VUV) Raman laser offers great potential for high‐quality microfabrication of fused quartz by ablation. In this process, short wavelength components of the beam play two roles, that is, stationary effect and transitional effect. The stationary effect means photodissociation of Si–O bonds and formation of metastable absorption sites to the longer wavelength beam components. The transitional effect increases the absorption to the fundamental beam with a 266 nm wavelength from 0% to more than 60%. This phenomenon may be explained as the excited‐state absorption (ESA) due to the coupling of the VUV laser beams with the fundamental beam. The mechanism of the high‐quality ablation is discussed by making a comparison between these two effects. © 1995 American Institute of Physics.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
79.20.Ds Laser-beam impact phenomena
81.65.-b Surface treatments

Study of band offsets in CdF2/CaF2/Si(111) heterostructures using x‐ray photoelectron spectroscopy

A. Izumi, Y. Hirai, K. Tsutsui, and N. S. Sokolov

Appl. Phys. Lett. 67, 2792 (1995); http://dx.doi.org/10.1063/1.114595 (3 pages) | Cited 20 times

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The valence band offsets at the heterointerfaces of the CdF2/CaF2/Si(111) structure grown by molecular beam epitaxy were evaluated using x‐ray photoelectron spectroscopy, and the energy band diagram of this heterostructure was proposed. It was found that the interface of CdF2/CaF2 has large conduction band offset: 2.9 eV, and the energy level of CdF2 conduction band edge is below that of Si. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Calorimetric study of the energetics and kinetics of interdiffusion in Cu/Cu6Sn5 thin‐film diffusion couples

K. F. Dreyer, W. K. Neils, R. R. Chromik, D. Grosman, and E. J. Cotts

Appl. Phys. Lett. 67, 2795 (1995); http://dx.doi.org/10.1063/1.114596 (3 pages) | Cited 10 times

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Differential scanning calorimetry was used to characterize the energetics and kinetics of interdiffusion in solder/metal diffusion couples. The heat of formation of Cu3Sn from Cu6Sn5 and Cu thin films was found to be ΔHr=−4.3±0.3 kJ/mol, similar to the results of previous measurements on bulk samples. We have seen that the nucleation of Cu3Sn begins at temperatures near 360 K, but that the nucleation and initial growth of Cu3Sn is not a well‐defined Arrhenius process in these diffusion couples. Later portions of our differential scanning calorimetry scans were identified with diffusion‐limited growth of Cu3Sn. From these calorimetry data we have estimated the averaged interdiffusion coefficient, math(cm2/s)=D0 exp (−E/kbT), where kb is Boltzmann’s constant and D0=3.2×10−2 cm2/s and E=0.87 eV/atom. © 1995 American Institute of Physics.
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68.35.Fx Diffusion; interface formation

Incorporation of nitrogen in chemical vapor deposition diamond

R. Samlenski, C. Haug, R. Brenn, C. Wild, R. Locher, and P. Koidl

Appl. Phys. Lett. 67, 2798 (1995); http://dx.doi.org/10.1063/1.114788 (3 pages) | Cited 40 times

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To study the incorporation of nitrogen, diamond films were prepared by chemical vapor deposition homoepitaxially on {100} and {111} oriented diamond substrates. 50 ppm of isotopic 15N2 was added to the process gas. Nuclear reaction analysis was applied to determine quantitatively the concentration of incorporated 15N. The analysis is based on the detection of the 4.44 MeV γ‐radiation of the 15N(p,α1γ)12C reaction. By a proper suppression of the γ‐background, a sensitivity of better than 0.5 ppm can be achieved. The measurements reveal a preferred incorporation of nitrogen into {111} growth sectors, the 15N concentration in {111} growth sectors is by a factor of 3–4 larger than in the {100} growth sectors. The N/C ratios in the films were found to be in the ppm regime and four orders of magnitude below the N/C ratios in the gas phase. © 1995 American Institute of Physics.
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61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Growth and characterization of carbon nitride thin films prepared by arc‐plasma jet chemical vapor deposition

Tyan‐Ywan Yen and Chang‐Pin Chou

Appl. Phys. Lett. 67, 2801 (1995); http://dx.doi.org/10.1063/1.114789 (3 pages) | Cited 78 times

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Carbon nitride thin films have been successfully grown on nickel substrates by a novel arc‐plasma jet chemical vapor deposition. These films were characterized by Auger electron spectroscopy, transmission electron microscopy, and Raman spectroscopy. Small grains (∼0.1 μm) as well as nanocrystallites found in the films were identified to be β‐C3N4. Raman spectroscopy also confirmed the existence of β‐C3N4 phase in the films through five pronounced Raman bands as expected from the Hooke’s law approximation based on the vibrational frequencies obtained in analogous compound, β‐Si3N4. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Morphological instability of bilayers of copper germanide films and amorphous germanium

J. P. Doyle, B. G. Svensson, and S. Johansson

Appl. Phys. Lett. 67, 2804 (1995); http://dx.doi.org/10.1063/1.114790 (3 pages) | Cited 16 times

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The morphological instability of copper germanide (Cu3Ge) films in contact with amorphous germanium is reported. Through secondary ion mass spectrometry, x‐ray diffraction, transmission electron microscopy, and electrical measurements, the breakdown of the continuous layer has been monitored. On the contrary, with Cu3Ge in contact with single crystal germanium, no instability is observed at the same temperature. The crystallization of the amorphous germanium appears to be the mechanism responsible for the instability. © 1995 American Institute of Physics.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology

Determination of CuPt‐type ordering in GaInP by means of x‐ray diffraction in the skew, symmetric arrangement

Q. Liu, W. Prost, and F. J. Tegude

Appl. Phys. Lett. 67, 2807 (1995); http://dx.doi.org/10.1063/1.114791 (3 pages) | Cited 7 times

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This letter presents a simple, quick, nondestructive method for the determination of ordering in Ga0.51In0.49P layers using x‐ray diffractometry. The skew, symmetric arrangement of x‐ray reflection was used for this purpose enabling the measurements of all allowed (hkl) reflections. Ordered Ga0.51In0.49P layers grown by metalorganic vapor‐phase epitaxy at different substrate temperatures were studied. The {1/2,1/2,1/2}, {1/2,1/2,3/2}, and {1/2,1/2,5/2} reflections of the ordering‐induced monolayer superlattices have been observed. The experimental results are discussed in detail, demonstrating that x‐ray diffractometry is a powerful means to evaluate ordering in semiconductors. © 1995 American Institute of Physics.
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61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
68.55.-a Thin film structure and morphology

Evidence for the presence of remnant strain in grey‐tracked KTiOPO4

M. N. Satyanarayan, H. L. Bhat, M. R. Srinivasan, P. Ayyub, and M. S. Multani

Appl. Phys. Lett. 67, 2810 (1995); http://dx.doi.org/10.1063/1.114792 (3 pages) | Cited 5 times

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Grey tracks produced in KTiOPO4 (KTP) by applying a dc electric field have been studied through optical absorption, Raman scattering, and synchrotron x‐ray topography. A study of the optical absorption and Raman scattering from the grey‐tracked region suggests that their formation is accompanied by changes in the electronic levels of Ti4+. There is no evidence for a major structural change or disorder in the grey‐tracked region. However, the x‐ray topographs do indicate the presence of a remnant strain in the lattice, which might contribute to the observed changes in the Raman intensities. © 1995 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
71.55.Ht Other nonmetals
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

High‐efficiency energy up‐conversion at GaAs‐GaInP2 interfaces

F. A. J. M. Driessen

Appl. Phys. Lett. 67, 2813 (1995); http://dx.doi.org/10.1063/1.114793 (3 pages) | Cited 30 times

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Luminescence far above the excitation energy is observed at GaAs‐ GaInP2 interfaces. The intensity of this up‐converted signal varies superlinearly with excitation density. Up‐converted photoluminescence excitation spectroscopy shows that the signal disappears if the excitation energy is tuned below the GaAs band gap. It is concluded that cold Auger processes and the presence of metastable states in the  GaInP2, induced by residual CuPt ordering, cause this nonlinear effect at these type I interfaces. © 1995 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors

Photon‐assisted tunneling in a resonant tunneling diode: Stimulated emission and absorption in the THz range

H. Drexler, J. S. Scott, S. J. Allen, K. L. Campman, and A. C. Gossard

Appl. Phys. Lett. 67, 2816 (1995); http://dx.doi.org/10.1063/1.114794 (3 pages) | Cited 55 times

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The dc I–V characteristic of a triple‐barrier resonant tunneling diode (RTD) integrated in a bowtie antenna and driven by THz radiation displays up to five additional resonant tunneling channels. These channels appear as additional peaks in the I–V characteristic whose voltage positions vary linearly with frequency in the investigated range between ν=1.0 and 3.4 THz. We attribute these peaks to photon‐assisted tunneling processes corresponding to absorption and stimulated emission of up to three photons. The experiments suggest that such a device can be utilized to detect and generate THz radiation. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling
73.50.Pz Photoconduction and photovoltaic effects
78.45.+h Stimulated emission

Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra‐large‐scale integrated dynamic random access memory application

Cheol Seong Hwang, Soon Oh Park, Hag‐Ju Cho, Chang Suk Kang, Ho‐Kyu Kang, Sang In Lee, and Moon Yong Lee

Appl. Phys. Lett. 67, 2819 (1995); http://dx.doi.org/10.1063/1.114795 (3 pages) | Cited 167 times

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(Ba,Sr)TiO3 (BST) thin films with thicknesses ranging from 15 to 50 nm are prepared by a rf magnetron sputtering on Pt/SiO2/Si substrates. The dielectric constants of BST thin films increase with increasing deposition temperature and thicknesses. The leakage current increases with increasing deposition temperature and this prevents the deposition temperature of the 20 nm thick BST thin film from being increased to a value more than 640 °C. The leakage current is also critically dependent upon the postannealing temperature and atmosphere after the top electrode fabrication. The dielectric constant increases with increasing postannealing temperature which further reduces the SiO2 equivalent thicknesses of the BST thin films. A 20 nm thick BST thin film deposited at 640 °C and postannealed at 750 °C under N2 atmosphere for 30 min, shows a SiO2 equivalent thickness of 0.24 nm, dielectric dissipation factor less than 1%, and leakage current of about 40 nA/cm2 at ∓1.5 V. © 1995 American Institute of Physics.
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81.15.Cd Deposition by sputtering

Zeeman spectroscopy of the Fe3+ center in GaN

R. Heitz, P. Thurian, I. Loa, L. Eckey, A. Hoffmann, I. Broser, K. Pressel, B. K. Meyer, and E. N. Mokhov

Appl. Phys. Lett. 67, 2822 (1995); http://dx.doi.org/10.1063/1.114796 (3 pages) | Cited 22 times

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We report an optical investigation of the Zeeman behavior of the deep iron acceptor in GaN grown on 6H–SiC. The characteristic ground state splitting of the near‐infrared luminescence transition at 1.2988 eV allows for an unambiguous assignment to Fe3+previously proposed on the basis of ODMR results. The observed luminescence lifetime of 8 ms as well as the fine structure of the excited state are consistent with a 4T1(G)–6A1(S) transition. The 4T1(G) state is found to couple only weakly to ϵ‐type phonon modes. © 1995 American Institute of Physics.
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71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors

Direct observation of transferred‐electron effect in GaN

Z. C. Huang, R. Goldberg, J. C. Chen, Youdou Zheng, D. Brent Mott, and P. Shu

Appl. Phys. Lett. 67, 2825 (1995); http://dx.doi.org/10.1063/1.114797 (2 pages) | Cited 26 times

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We report the direct observation of transferred‐electron effect in unintentionally doped GaN epilayers grown by metalorganic chemical vapor deposition. The negative differential resistivity (NDR) was observed from the current‐electric field characteristics in GaN using a metal‐semiconductor‐metal (M‐S‐M) system. The threshold field for the onset of NDR was independent of the spacing of M‐S‐M fingers, and was measured to be 1.91×105 V/cm for GaN with an n‐type carrier concentration of 1014 cm−3. This value is very close to the value obtained from theoretical simulation. This observation is an experimental evidence of transferred‐electron effects in GaN, which is important in understanding GaN energy band structure and in the application of Gunn‐effect devices using GaN materials. © 1995 American Institute of Physics.
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73.50.Fq High-field and nonlinear effects
73.61.Ey III-V semiconductors
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