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6 Nov 1995

Volume 67, Issue 19, pp. 2753-2887

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Ultrafast far‐infrared GaAs/AlGaAs photon drag detector in microwave transmission line topology

H. Sigg, M. H. Kwakernaak, B. Margotte, D. Erni, P. van Son, and K. Köhler

Appl. Phys. Lett. 67, 2827 (1995); http://dx.doi.org/10.1063/1.114798 (3 pages) | Cited 11 times

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A novel room temperature GaAs/AlGaAs multiquantum‐well photon drag detector operating in the 10 μm wavelength range and designed as a microstrip transmission line has been developed. Total‐reflection angle incoupling, using a Ge prism, provides velocity matching between the optical and electrical pulses. Signal transients with 10 ps rise and fall time have been measured using 2 ps pulses from a free electron laser. From the wavelength dependence of the photon drag signal the room temperature momentum relaxation times in the first and second electron subband can be determined. © 1995 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects
85.60.Gz Photodetectors (including infrared and CCD detectors)

Pressure influence on the decay of the photoluminescence in Si nanopowder grown by plasma‐enhanced chemical vapor deposition

P. Roura, J. Costa, N. A. Sulimov, J. R. Morante, and E. Bertran

Appl. Phys. Lett. 67, 2830 (1995); http://dx.doi.org/10.1063/1.114799 (3 pages) | Cited 5 times

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The quenching of the photoluminescence (PL) intensity of Si powder grown by plasma‐enhanced chemical vapor deposition due to the residual gas pressure is reported. For He as well as for Ar, the dependence is exponential (IPL∝e−P/P0) with P0 depending on the gas. This behavior is further analyzed through the pressure influence on the PL decay transients. Conclusions are drawn concerning the way the presence of the gas influences the emitting centers. © 1995 American Institute of Physics.  
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78.55.Hx Other solid inorganic materials

Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition

T. Kimoto, A. Itoh, H. Matsunami, S. Sridhara, L. L. Clemen, R. P. Devaty, W. J. Choyke, T. Dalibor, C. Peppermüller, and G. Pensl

Appl. Phys. Lett. 67, 2833 (1995); http://dx.doi.org/10.1063/1.114800 (3 pages) | Cited 33 times

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4H‐SiC epilayers grown by chemical vapor deposition were characterized by Hall effect, admittance spectroscopy, low‐temperature photoluminescence, and deep level transient spectroscopy (DLTS). The nitrogen (N) donor activation energies were estimated as 45–65 meV at hexagonal and 105–125 meV at cubic sites from Hall effect investigations in agreement with the data taken by admittance spectroscopy. In low‐temperature photoluminescence, the N bound exciton peaks were dominant, however, free exciton peaks were also observed. DLTS measurements revealed a low concentration of electron traps (∼1013cm−3) for both samples grown on Si and C faces, indicating high‐quality epilayers independent of the substrate polarity. © 1995 American Institute of Physics.
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61.72.up Other materials
71.55.Ht Other nonmetals

The effect of rapid thermal N2O nitridation on the oxide/Si(100) interface structure

Z. H. Lu, S. P. Tay, R. Cao, and P. Pianetta

Appl. Phys. Lett. 67, 2836 (1995); http://dx.doi.org/10.1063/1.114801 (3 pages) | Cited 76 times

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High‐resolution x‐ray photoelectron spectroscopy (XPS) was used to study the chemical nature and physical distribution of N in oxynitride films formed by rapid thermal N2O processes (RTPs). High‐resolution synchrotron Si 2p core level photoemission spectroscopy (PES) was used to study the oxide/Si(100) interface suboxide structures with and without the presence of N. XPS N 1s studies indicated that there are two types of N in the RTP oxynitride films. The chemical bond configuration of the first type of N is similar to that N in Si3N4 and is mainly distributed within the first 1 nm from the interface. The second type of N is distributed mainly outside of the first 1 nm region, and the N is likely bonded to two Si and one oxygen atom. PES studies showed that Si formed suboxides with oxygen at the interface for all oxynitride films. It is found that there is no change in the Si+1 structure while there is a dramatic intensity decrease in the Si+2 and Si+3 peaks with the inclusion of N in the oxide. Both the XPS and PES results are explained in terms of a strain reduction as N is incorporated in the film near the interface region, where Si3N4 functions as a buffer layer which reduces the stress caused by the large Si ‘‘lattice’’ mismatch between the bulk Si and the oxide overlayer. About 1/5 of the Si+2 and 1/3 of Si+3 atoms at the SiO2/Si interface has been replaced by the Si3N4 buffer layer at the oxynitride/Si interface. © 1995 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
81.65.-b Surface treatments

Distinguishing the As‐ or Ga‐rich initial reconstruction in short‐pulse supersonic nozzle beam epitaxy of GaAs in real time by millisecond time‐resolved reflectance difference

Jie Cui, Suian Zhang, Akihiko Tanaka, and Yoshinobu Aoyagi

Appl. Phys. Lett. 67, 2839 (1995); http://dx.doi.org/10.1063/1.114802 (3 pages) | Cited 1 time

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For short‐pulse supersonic nozzle beam epitaxy growth of GaAs on an As‐rich initial surface, we measured the fast evolutions of As dimer density and Ga dimer density in real time by using a millisecond time‐resolved reflectance difference (RD) system. Under the impingement of a trimethylgallium short pulse, the (2×4)β, (2×4)γ, and c(4×4) initial reconstructed surfaces show very different transient RD signals which can be used to distinguish the initial reconstruction of the GaAs surface in real time during the epitaxy. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology

Surface diffusion of AlAs on GaAs in metalorganic vapor phase epitaxy studied by high‐vacuum scanning tunneling microscopy

Makoto Kasu and Naoki Kobayashi

Appl. Phys. Lett. 67, 2842 (1995); http://dx.doi.org/10.1063/1.114803 (3 pages) | Cited 4 times

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After depositing a 1/6 monolayer of AlAs on a very flat GaAs (001) surface by metalorganic vapor‐phase epitaxy, we have studied AlAs two‐dimensional (2D) nuclei by high‐vacuum scanning tunneling microscopy. AlAs 2D nuclei elongate in the [110] direction, like GaAs. The density of AlAs 2D nuclei in the saturation region was 5×1010 cm−2 at 580 °C. The saturated AlAs 2D nucleus density decreased as the temperature increased. From the saturated AlAs 2D nucleus densities the surface diffusion coefficient of AlAs on GaAs was calculated to be 1.5×10−7 cm2/s at 530 °C. This is one order of magnitude smaller than that of GaAs on GaAs. © 1995 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
81.15.Kk Vapor phase epitaxy; growth from vapor phase

High‐energy implantation of Hg+ ions into GaAs grown by liquid encapsulated Czochralski method: Formation of multiple shallow emissions

Kentaro Harada, Bassirou Lo, Yunosuke Makita, Aboubaker C. Beye, Matthew P. Halsall, Shinji Kimura, Naoto Kobayashi, Tsutomu Iida, Takayuki Shima, Hajime Shibata, Akira Obara, and Tokue Matsumori

Appl. Phys. Lett. 67, 2845 (1995); http://dx.doi.org/10.1063/1.114804 (3 pages) | Cited 2 times

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Optical and electrical properties of Hg acceptor in GaAs were systematically investigated as a function of Hg concentration. Samples were prepared by high‐energy ion implantation of Hg+ into GaAs grown by liquid encapsulated Czochralski method. Annealing was made by rapid thermal annealing using infrared flash lamp at 950 °C during 3 s. Photoluminescence measurements at 2 K revealed that in addition to the well‐defined conduction band to Hg acceptors transition, the mercury‐related so‐called ‘‘g’’ neutral acceptor bound exciton band is found shifted from the carbon‐related ‘‘g’’ line by 0.8 meV. Moreover, two shallow emissions, are formed for net hole concentration ‖NA−ND‖ greater than 2×1017 cm−3 and 1×1019 cm−3, respectively. It is demonstrated that even a typical moderately deep acceptor Hg in GaAs, having ground‐state ionization energy of 52 meV can make multiple shallow emission levels presumably attributed to acceptor–acceptor pairs. © 1995 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors

Differences between As2 and As4 in the homoepitaxial growth of GaAs(110) by molecular beam epitaxy

D. M. Holmes, J. G. Belk, J. L. Sudijono, J. H. Neave, T. S. Jones, and B. A. Joyce

Appl. Phys. Lett. 67, 2848 (1995); http://dx.doi.org/10.1063/1.114805 (3 pages) | Cited 7 times

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The homoepitaxial growth of GaAs(110) thin films by molecular beam epitaxy has been studied in situ by reflection high‐energy diffraction. RHEED specular beam intensity oscillations were recorded over a wide range of growth conditions in which the substrate temperature, growth rate, V/III flux ratio and the relative amount of As2 or As4 in the incident arsenic beam were varied. These conditions were plotted to produce a phase map of the growth conditions for which specular intensity oscillations were recordable. RHEED oscillations were obtained over a much wider range of growth conditions when using As2 compared to growth using As4. It is shown that this is related to the very different incorporation coefficients of the two arsenic species and reflects the requirement of a high arsenic adatom concentration in order to maintain the 1:1 stoichiometry of the nonpolar (110) surface. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Electronic states in GaAs v‐groove quantum wire structures with superlattice barriers

C. Kiener, L. Rota, J. M. Freyland, K. Turner, A. C. Maciel, J. F. Ryan, U. Marti, D. Martin, F. Morier‐Gemoud, and F. K. Reinhart

Appl. Phys. Lett. 67, 2851 (1995); http://dx.doi.org/10.1063/1.114806 (3 pages) | Cited 5 times

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We present a joint theoretical and experimental investigation of GaAs v‐groove quantum wires confined in GaAs/AlAs superlattice barriers. We have computed the electronic states for both the quantum wire and the barriers. The intrinsic bending of the superlattice layers, together with systematic spatial variations of their thickness, create localized states in the barriers that are separated from the wire. This effect has a strong impact on the overall luminescence efficiency of the wires. The results are in excellent agreement with photoluminescence and photoluminescence excitation spectra. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors

Two types of local oxide/substrate defects in very thin silicon dioxide films on silicon

W. S. Lau, V. Sane, K. S. Pey, and B. Cronquist

Appl. Phys. Lett. 67, 2854 (1995); http://dx.doi.org/10.1063/1.114807 (3 pages)

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The local oxide defects observed in thin silicon dioxide films on p‐type Si were studied with the electron beam induced current/tunneling current microscopy technique. Excluding pinholes, all the local defects observed are local oxide/substrate defects, i.e., local oxide defects propagated from defects in the Si substrate into the SiO2. It was observed that local oxide/substrate defects can be further differentiated into two different types by studying the transition from the true oxide electron beam induced current contrast to the tunneling current microscopy contrast. © 1995 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Suppression of dislocation formation in silicon by carbon implantation

T. W. Simpson, R. D. Goldberg, and I. V. Mitchell

Appl. Phys. Lett. 67, 2857 (1995); http://dx.doi.org/10.1063/1.114808 (3 pages) | Cited 9 times

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We have examined the role of carbon co‐implantation in the formation of secondary defects in self‐ion‐irradiated Si(100). Implantation of Si ions (540 keV energy, 1015 ions/cm2 at 1.3×1011 ions/cm2/s, Ti=90 °C) followed by a 900 °C, 15 min anneal leads to the growth of an extended defect band at the end of range. Range matched‐carbon co‐implantation (300 keV energy, 1015 ions/cm2 plus 500 keV energy 1015 ions/cm2 of 1.5×1011 ions/cm2/s, Ti=90 °C) can be used to modify this defect development dramatically. While direct co‐implantation of carbon and silicon ions to similar concentrations has no apparent effect on the formation of extended defects, such formation is suppressed when the implanted C is incorporated substitutionally into the silicon lattice. These results are discussed in the context of recent reports on C suppression of the transient enhanced diffusion of boron. © 1995 American Institute of Physics.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects

Degraded noise characteristics of submicrometer area field effect transistors subjected to plasma etching and Fowler–Nordheim stress

Scott T. Martin, G. P. Li, Eugene Worley, and Joe White

Appl. Phys. Lett. 67, 2860 (1995); http://dx.doi.org/10.1063/1.114809 (3 pages) | Cited 7 times

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The effects of reactive ion etching (RIE) and Fowler–Nordheim (FN) gate current stresses upon both the 1/fγ and random telegraph signal (RTS) noise characteristics of submicrometer gate area metal oxide semiconductor field‐effect transistors has been analyzed. While control devices exhibit the Lorentzian noise spectra and discrete switching behavior attributable to single oxide defects, the first layer metal antenna devices exhibit degraded RTSs and near ideal 1/f noise characteristics. An evolution of this 1/f behavior has been reproduced in control devices by subjecting them to a series of UV illuminated FN gate current stresses. Results of this study suggest that multiple oxide traps with a distribution in time constants are generated during RIE and that the amount of oxide degradation generated during plasma etching may be more substantial than that produced during plasma ashing. © 1995 American Institute of Physics.
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72.70.+m Noise processes and phenomena
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Sulfur diffusion and the interstitial contribution to arsenic self‐diffusion in GaAs

Masashi Uematsu, Peter Werner, Matthias Schultz, Teh Y. Tan, and Ulrich M. Gösele

Appl. Phys. Lett. 67, 2863 (1995); http://dx.doi.org/10.1063/1.114810 (3 pages) | Cited 13 times

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A quantitative determination of the contribution of As self‐interstitials to the As self‐diffusion coefficient in GaAs has been carried out. Values of the As self‐interstitial contributions are deduced from sulfur indiffusion profiles in GaAs, which are simulated based on the kick‐out mechanism. Furthermore, the relative contributions of As self‐interstitials and of As vacancies are discussed. © 1995 American Institute of Physics.
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61.72.J- Point defects and defect clusters
66.30.H- Self-diffusion and ionic conduction in nonmetals

Fabrication of c‐oriented HgBa2Ca2Cu3O8+δ superconducting thin films

S. H. Yun, J. Z. Wu, B. W. Kang, A. N. Ray, A. Gapud, Y. Yang, R. Farr, G. F. Sun, S. H. Yoo, Y. Xin, and W. S. He

Appl. Phys. Lett. 67, 2866 (1995); http://dx.doi.org/10.1063/1.114811 (3 pages) | Cited 15 times

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Superconducting Hg‐based cuprate thin films have been fabricated on (100) SrTiO3 substrate using rf sputtering and post‐Hg‐vapor annealing. These films are dominated by c‐axis‐oriented Hg‐1223 phase as indicated by x‐ray diffraction and SQUID measurements. Using four‐probe technique, the Tc,onset was found to be 130–132 K and Jc was up to 8.5×104 A/cm2 at 77 K and zero field. © 1995 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures
81.15.Cd Deposition by sputtering

All‐high‐Tc superconductor rapid‐single‐flux‐quantum circuit operating at ∼30 K

S. Shokhor, B. Nadgorny, M. Gurvitch, V. Semenov, Yu. Polyakov, K. Likharev, S. Y. Hou, and Julia M. Phillips

Appl. Phys. Lett. 67, 2869 (1995); http://dx.doi.org/10.1063/1.114812 (3 pages) | Cited 37 times

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We have implemented a simple circuit of the rapid single‐flux‐quantum (RSFQ) logic family using a single‐layer YBa2Cu3O7−x thin‐film structure with 14 in‐plane Josephson junctions formed by direct electron beam writing. The circuit includes two dc/SFQ converters, two Josephson transmission lines, a complete RS SFQ flip‐flop, and an SFQ/dc converter (readout SQUID). Low‐frequency testing has shown that the dc‐current‐biased circuit operates correctly and reliably at T∼30 K, a few degrees below the effective critical temperature of the junctions. Prospects for a further increase of the operation temperature and implementation of more complex RSFQ circuits are discussed in brief. © 1995 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)

Observation of Josephson effect in YBa2Cu3O7−x/Nd1.85Ce0.15CuO4−y bilayer junctions

I. Takeuchi, S. N. Mao, X. X. Xi, K. Petersen, C. J. Lobb, and T. Venkatesan

Appl. Phys. Lett. 67, 2872 (1995); http://dx.doi.org/10.1063/1.114813 (3 pages) | Cited 2 times

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Josephson junctions were fabricated at the interface of YBa2Cu3O7−x (YBCO) and Nd1.85Ce0.15CuO4−y (NCCO) in heteroepitaxially grown superconducting bilayers. Devices of various configurations and sizes were fabricated, and they display a resistively shunted junction like I–V characteristics with hysteresis at low temperatures. A clear ac Josephson effect was observed under microwave irradiation, and critical currents were completely suppressible by external magnetic fields. Oxygen diffusion or charge diffusion at the interface are possible origins for the barrier formation. © 1995 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
74.78.Fk Multilayers, superlattices, heterostructures

Pressure effect on yttrium doped La0.60Y0.07Ca0.33MnO3 compound

Z. Arnold, K. Kamenev, M. R. Ibarra, P. A. Algarabel, C. Marquina, J. Blasco, and J. García

Appl. Phys. Lett. 67, 2875 (1995); http://dx.doi.org/10.1063/1.114814 (3 pages) | Cited 32 times

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We report the effect of hydrostatic pressure up to 8 kbar on magnetoelastic, magnetic, and transport properties in the temperature range 10–300 K. An increase of Curie temperature Tc with pressure ΔTc/Δp=2.6 K/kbar was determined from ac susceptibility measurements. The anomalies in resistivity and magnetovolume effects are significantly suppressed by pressure but the temperatures of these anomalies increased with pressure with the same slope as Tc. These results indicate that impurity state of yttrium rather than lattice parameter reduction is responsible for the large increase in the magnetoresistance observed in the doped compound. © 1995 American Institute of Physics.
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72.20.My Galvanomagnetic and other magnetotransport effects
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.80.+q Magnetomechanical effects, magnetostriction

Enhanced superparamagnetism in two‐dimensional arrays of nanometer‐sized Fe islands

K. R. Heim, G. G. Hembree, K. E. Schmidt, and M. R. Scheinfein

Appl. Phys. Lett. 67, 2878 (1995); http://dx.doi.org/10.1063/1.114815 (3 pages) | Cited 8 times

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Iron grown on room‐temperature CaF2/Si(111) substrates form two‐dimensional arrays of nanometer‐sized superparamagnetic islands. Deposition of Ag on the Fe/CaF2/Si(111) produced a superparamagnetic response where the effective moment was proportional to the number of Fe islands covered by an average‐sized Ag island. The nonmagnetic Ag overlayer mediates a long‐range exchange between neighboring Fe islands within an individual Ag island. Monte Carlo methods are used to examine ordering in two dimensions and to set minimum interisland coupling strengths. © 1995 American Institute of Physics.
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75.20.-g Diamagnetism, paramagnetism, and superparamagnetism
75.70.Rf Surface magnetism
75.50.Tt Fine-particle systems; nanocrystalline materials

Easy axis distribution in two‐dimensional recording media

R. Iglesias, J. M. G. Merayo, and H. Rubio

Appl. Phys. Lett. 67, 2881 (1995); http://dx.doi.org/10.1063/1.114816 (3 pages) | Cited 4 times

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In contrast to preceding methods valid only for noninteracting many‐particle assemblies, we describe a theory applicable to two‐dimensional recording media, which includes interactions between particles through a mean‐field model. Expressions are obtained for the angular dependence of magnetic remanences parallel and perpendicular to the applied field. We define a quantity independent of interaction, the remanent magnetization direction, which provides a realistic distribution of easy axes. From this distribution, plus saturation squareness measurements, the interaction strength may be estimated. © 1995 American Institute of Physics.
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75.70.Rf Surface magnetism
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

Formation of amorphous silicide nanoclusters in chromium‐ and titanium‐implanted silica

E. Cattaruzza, G. Mattei, P. Mazzoldi, R. Bertoncello, G. Battaglin, and L. Mirenghi

Appl. Phys. Lett. 67, 2884 (1995); http://dx.doi.org/10.1063/1.114817 (3 pages) | Cited 7 times

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Amorphous nanoclusters of chromium and titanium silicides have been synthesized by implanting 35 keV chromium and 30 keV titanium ions, at a fluence of 1×1017 cm−2 in amorphous silica. The cluster stoichiometries were [Cr]/[Si]=1.6±0.3 and [Ti]/[Si]=1.1±0.3, respectively, as obtained by energy dispersive spectroscopic x‐ray microanalysis and confirmed by x‐ray photoelectron spectroscopy analysis. Titanium‐implanted ions are more reactive than chromium ones in terms of the formation of chemical bonds with silicon of the host silica matrix. © 1995 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
61.80.Jh Ion radiation effects
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
FREE

Erratum: ‘‘Second harmonic generation in hexagonal silicon carbide’’ [Appl. Phys. Lett. 66, 1883 (1995)]

P. M. Lundquist, W. P. Lin, G. K. Wong, M. Razeghi, and J. B. Ketterson

Appl. Phys. Lett. 67, 2887 (1995); http://dx.doi.org/10.1063/1.115556 (1 page) | Cited 1 time

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Abstract Unavailable
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
99.10.Cd Errata
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