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10 Jul 1995

Volume 67, Issue 2, pp. 149-296

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Amorphous silicon–carbon based thin films with efficient ultraviolet‐excited photoluminescence and low self‐absorptivity in the emission spectral range

D. Rüter, S. Rolf, and W. Bauhofer

Appl. Phys. Lett. 67, 149 (1995); http://dx.doi.org/10.1063/1.114649 (3 pages) | Cited 6 times

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Amorphous silicon–carbon based thin films deposited in a microwave plasma reactor using organosilane vapors from liquid sources show efficient photoluminescence (several %) when excited with ultraviolet (UV) light together with a low absorptivity (down to 1 cm−1 at the long‐wavelength side) in the spectral range of the luminescence emission (400–550 nm). On the basis of these films we have prepared luminescent waveguiding layer structures which we propose for an application as a fast, sensitive, and selective UV detector integrated on silicon. © 1995 American Institute of Physics.
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78.66.Jg Amorphous semiconductors; glasses
78.55.Hx Other solid inorganic materials

Direct measurement of spectral emissivity of liquid Si in the range of visible light

Eiryo Takasuka, Eiji Tokizaki, Kazutaka Terashima, and Shigeyuki Kimura

Appl. Phys. Lett. 67, 152 (1995); http://dx.doi.org/10.1063/1.114650 (3 pages) | Cited 11 times

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Normal spectral emissivity of liquid Si was determined by direct measurement of thermal radiations from a surface of the Si melt and a blackbody cavity. The spectral emissivity has little dependence on the wavelength. The emissivity is 0.27 for the wavelength from 500 to 800 nm and is about a half of that of solid silicon at the melting point. Temperature dependence of the emissivity is very small in the temperature range from the melting point to 1550 °C. Free‐electron model with a plasma frequency and relaxation time of the order of 1016 Hz gives a good agreement with the experimental result. That indicates the dominant effect of the free electrons on the optical properties of the liquid Si. © 1995 American Institute of Physics.
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78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
81.10.Fq Growth from melts; zone melting and refining
65.90.+i Other topics in thermal properties of condensed matter (restricted to new topics in section 65)

Dichroic ultraviolet absorption of thin liquid crystal films

John L. West, Gregory R. Magyar, Jack R. Kelly, S. Kobayashi, Y. Iimura, and N. Yoshida

Appl. Phys. Lett. 67, 155 (1995); http://dx.doi.org/10.1063/1.114651 (3 pages) | Cited 12 times

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Cyanobiphenyl liquid crystals absorb strongly in the ultraviolet. These absorption bands are highly dichroic. The dichroic ratio changes as a function of order parameter and orientation of the liquid crystals. Plots of the dichroic ratio as a function of film thickness demonstrate that the polymer alignment layer not only imposes an orientation on the liquid crystal director but also lowers the order parameter of the liquid crystal near the polymer surface. A sharp decrease in dichroic ratio occurs at film thicknesses near 35 nm, suggesting a phase transition which may be caused by the appearance of a biaxial phase or smectic layering at the air interface. © 1995 American Institute of Physics.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.70.Df Liquid crystals

Pulse dynamics in stretched‐pulse fiber lasers

K. Tamura, E. P. Ippen, and H. A. Haus

Appl. Phys. Lett. 67, 158 (1995); http://dx.doi.org/10.1063/1.114652 (3 pages) | Cited 37 times

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Stretched‐pulse additive pulse mode‐locked fiber lasers use fibers with opposite signs of group velocity dispersion to introduce large changes of pulse width per pass and avoid excessive nonlinearity. We have investigated these intracavity pulse dynamics. Optimal points for output coupling and for the placement of the artificial absorber element in the cavity are determined for a fiber ring laser. The dispersion balance is important for the generation of clean sub‐100 fs pulses, but the net cavity length is found to be relatively uncritical. © 1995 American Institute of Physics.
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42.55.Wd Fiber lasers
42.60.Fc Modulation, tuning, and mode locking

In situ measurement of zinc oxide film thickness and optical losses

B. Wacogne, C. N. Pannell, M. P. Roe, and T. J. Pattinson

Appl. Phys. Lett. 67, 161 (1995); http://dx.doi.org/10.1063/1.114653 (3 pages) | Cited 1 time

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We report a simple interferometric method for simultaneous, in situ measurement of both the thickness and the depth resolved optical losses of thin transparent films. The experimental arrangement is simple requiring only a laser and a detector regardless of the substrate. The originality of our method is based on the evaluation of the optical losses from the envelopes of the laser signal, while the thickness is measured conventionally by counting the number of signal periods. The technique has been tested while growing ZnO films in a planar rf magnetron sputtering system. Using the above method, the evolution of optical losses is easily observed during deposition, leading to the possibility of a real time control of the film quality. Both theoretical calculations and experimental results are presented in this letter. © 1995 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Nk Insulators

Observation of x‐ray sheet beam from radioisotopes embedded in thin‐film waveguide

Y. C. Sasaki, Y. Tomioka, and I. Satoh

Appl. Phys. Lett. 67, 164 (1995); http://dx.doi.org/10.1063/1.114654 (3 pages)

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A specific angular distribution of x rays from 111In embedded in a thin‐film waveguide (Au film/Langmuir–Blodgett film/Au substrate) is observed by a non‐energy‐dispersive two‐dimensional detector (imaging plate). The angular distribution for the thickness of the upper Au layer of 90 Å can be explained by normal calculation of the optical electromagnetic wave solution of Maxwell’s equations for each interface and reciprocity. However, the angular pattern in the upper 400 Å Au thickness layer cannot be accounted for by the normal approach without considering the intensity of the x‐ray sheet beam emerging from the end of the multilayer. © 1995 American Institute of Physics.
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41.50.+h X-ray beams and x-ray optics
07.85.-m X- and γ-ray instruments
78.70.Ck X-ray scattering

Air‐bridge microcavities

Pierre R. Villeneuve, Shanhui Fan, J. D. Joannopoulos, Kuo‐Yi Lim, G. S. Petrich, L. A. Kolodziejski, and Rafael Reif

Appl. Phys. Lett. 67, 167 (1995); http://dx.doi.org/10.1063/1.114655 (3 pages) | Cited 51 times

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We introduce and analyze a new type of high‐Q microcavity consisting of a channel waveguide and a one‐dimensional photonic crystal. A band gap for the guided modes is opened and a sharp resonant state is created by adding a single defect in the periodic system. An analysis of the eigenstates shows that strong field confinement of the defect state can be achieved with a modal volume less than half of a cubic half‐wavelength. We also present a feasibility study for the fabrication of suspended structures with micron‐sized features using semiconductor materials. © 1995 American Institute of Physics.
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42.50.-p Quantum optics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.Cr Fabrication techniques; lithography, pattern transfer

Intensity dependent mode competition in second harmonic generation in multimode waveguides

C. G. Treviño‐Palacios, G. I. Stegeman, M. P. De Micheli, P. Baldi, S. Nouh, D. B. Ostrowsky, D. Delacourt, and M. Papuchon

Appl. Phys. Lett. 67, 170 (1995); http://dx.doi.org/10.1063/1.114656 (3 pages) | Cited 8 times

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Second harmonic generation (SHG) in waveguides which are multimode at the second harmonic exhibit an intensity dependence in both the phase‐match wavelength and relative conversion efficiency of the different SHG modes because they are coupled to the same fundamental. © 1995 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Passive Q switching of the alexandrite laser with a Cr4+:Y2SiO5 solid‐state saturable absorber

Yen‐Kuang Kuo and Milton Birnbaum

Appl. Phys. Lett. 67, 173 (1995); http://dx.doi.org/10.1063/1.114657 (3 pages) | Cited 9 times

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Passive Q switching of a flashlamp‐pumped alexandrite laser with a Cr4+:Y2SiO5 (Cr4+:YSO) solid‐state saturable absorber has been demonstrated at room temperature. An output of a single Q‐switched laser pulse of 20 mJ in energy and 70 ns in duration was obtained. The output wavelength of the Q‐switched laser pulse and the free‐running laser was 753 nm. © 1995 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Px Semiconductor lasers; laser diodes

Vertical chirp in grating pair stretcher and compressor

Zhigang Zhang, Sayaka Harayama, Takashi Yagi, and Takashi Arisawa

Appl. Phys. Lett. 67, 176 (1995); http://dx.doi.org/10.1063/1.114658 (3 pages)

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We present a model to evaluate the vertical spectrum distribution of a laser beam in a grating pair stretcher or compressor at off‐horizontal plane incidence. The vertical spectrum displacement or vertical chirp in the output pulse has been calculated and shown quantitatively as functions of the off‐horizontal plane incident angle and the grating groove density. The resulting dispersion errors compared with that at horizontal incidence are also shown. © 1995 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.79.-e Optical elements, devices, and systems

GaAs quantum well distributed Bragg reflection laser with AlGaAs/GaAs superlattice gratings fabricated by focused ion beam mixing

A. J. Steckl, P. Chen, Xuelong Cao, Howard E. Jackson, M. Kumar, and J. T. Boyd

Appl. Phys. Lett. 67, 179 (1995); http://dx.doi.org/10.1063/1.114659 (3 pages) | Cited 8 times

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GaAs quantum well (QW) lasers with distributed Bragg reflection (DBR) Al0.3Ga0.7As/GaAs superlattice gratings have been fabricated by the single‐step, maskless focused ion beam (FIB) mixing. 200 keV Si++ FIB implantation with a beam diameter of ∼60–70 nm and a dose of 1014 cm−2 was used to obtain localized compositional mixing. The DBR grating period was 350 nm, corresponding to a third order grating matched to the emission from the 30 nm wide QW. Lasing operation was examined by optical pumping. With a pumping power 1.6× the threshold value, lasing modes were observed near 827 nm, with a spacing of 3 Å and a linewidth of 1.5 Å. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Spatially imaged inhomogeneous spontaneous emission spectra of high power in InGaAsP/InP Fabry–Pérot lasers

C. G. Bethea

Appl. Phys. Lett. 67, 182 (1995); http://dx.doi.org/10.1063/1.114660 (3 pages)

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Real‐time infrared imaging acquisition was used to measure the steady state intracavity spatial spontaneous emission profile along the active stripe of bulk Fabry–Pérot InGaAsP/InP lasers. The direct observation of spatially nonhomogeneous spontaneous emission profiles (relating to the spatial nonhomogeneity and redistribution of the quasi‐Fermi level along the gain guiding medium) is demonstrated. The three‐dimensional image mapping of the spatial redistribution of electrons along the active stripe well above lasing threshold is also discussed. We will demonstrate that the threshold saturation of spontaneous emission does not always occur along the entire length of the lasing cavity. Above threshold it was observed that the spatial redistribution of the spontaneous emission is highly wavelength dependent and that this observed phenomenon is a direct result of the optical cavity’s asymmetry. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Ultrahigh frequency oscillations and multimode dynamics in vertical cavity surface emitting lasers

O. Buccafusca, J. L. A. Chilla, J. J. Rocca, C. Wilmsen, S. Feld, and R. Leibenguth

Appl. Phys. Lett. 67, 185 (1995); http://dx.doi.org/10.1063/1.114661 (3 pages) | Cited 7 times

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We report the observation of ultrahigh frequency oscillations of up to 240 GHz in optically gain switched vertical cavity surface emitting lasers. These oscillations are shown to be produced by multimode emission through mode competition (10–30 GHz) or mode beating (above 100 GHz). Although these oscillations are not related to the intrinsic modulation bandwidth, some of them could be mistaken for relaxation oscillations, calling for careful interpretation of the results of this type of experiments. The highest frequencies observed for single mode relaxation oscillations were about 9 GHz in agreement with values of modulation bandwidth reported in the literature. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Deep defect levels of photorefractive sillenites

D. Eirug Davies and John J. Larkin

Appl. Phys. Lett. 67, 188 (1995); http://dx.doi.org/10.1063/1.114662 (3 pages) | Cited 5 times

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The photorefractive effect in materials such as bismuth silicon oxide (BSO) depends on photoionizing deep defect levels inadvertently present rather than controllably introduced. Using thermal stimulated conductivity measurements, a preliminary attempt has been made at associating specific levels with a particular sillenite member and impurity dopants. While many of the features prevail throughout, significant changes occur when Ge is substituted for Si to give BGO and when p‐ (Al) and n‐type (P) impurities are added to dope BSO.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
71.55.Ht Other nonmetals

On the efficiency of the electron sheath heating in capacitively coupled radio frequency discharges in the weakly collisional regime

U. Buddemeier, U. Kortshagen, and I. Pukropski

Appl. Phys. Lett. 67, 191 (1995); http://dx.doi.org/10.1063/1.114663 (3 pages) | Cited 25 times

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In low pressure, capacitively coupled rf discharges mode transitions in the shape of the electron energy distribution function on variation of the pressure have been observed previously, and have been interpreted as a transition from dominating stochastic to dominating Joule heating. In this letter we present a similar mode transition, which has been observed at constant discharge pressure on variation of the rf current density through the discharge. By comparison to a parametric kinetic model it is shown that a dependence of the sheath heating efficiency on the magnitude of the rf sheath potentials can be considered as a possible explanation of the mode transition. © 1995 American Institute of Physics.
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52.80.Pi High-frequency and RF discharges
52.50.Gj Plasma heating by particle beams
52.40.Hf Plasma-material interactions; boundary layer effects

Increased deposition rate of chemically vapor deposited diamond in a direct‐current arcjet with a secondary discharge

S. K. Baldwin, T. G. Owano, and C. H. Kruger

Appl. Phys. Lett. 67, 194 (1995); http://dx.doi.org/10.1063/1.114664 (3 pages) | Cited 6 times

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A secondary discharge was used to enhance chemical nonequilibrium in the boundary layer of a stagnation point flow reactor during the atmospheric pressure deposition of chemically vapor deposited (CVD) diamond with a direct‐current (dc) arcjet. The secondary discharge was induced by means of a positive potential on the deposition surface to drive a current through the boundary layer and produce energetic electrons. These electrons can promote superequilibrium concentrations of radicals at the growth surface. It was found that with 3.5 A/cm2 at 115 V in the secondary discharge, the growth rate of diamond in this reactor increased by a factor of 6 as compared with the floating or grounded substrate case. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Dynamics of laser ablation plume penetration through low pressure background gases

David B. Geohegan and Alexander A. Puretzky

Appl. Phys. Lett. 67, 197 (1995); http://dx.doi.org/10.1063/1.114665 (3 pages) | Cited 96 times

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The dynamics of laser‐ablated yttrium plume propagation through background argon have been investigated with fast time‐ and spatially‐resolved plasma diagnostics in order to characterize a general phenomenon believed to be important to film growth by pulsed laser deposition (PLD). During expansion into low‐pressure background gases, the ion flux in the laser ablation plasma plume is observed to split into fast and slow components over a limited range of distances including those typically utilized for PLD. Optical absorption and emission spectroscopy are employed to simultaneously identify populations of both excited and ground states of Y and Y+. These are correlated with intensified‐CCD (ICCD) photographs of visible plume luminescence and ion fluxes recorded with fast ion probes. These measurements indicate that plume‐splitting in background gases is consistent with scattering of target constituents by ambient gas atoms. The momentum transfer from these collisions produces a transition from the initial, ‘‘vacuum’’ velocity distribution into a velocity distribution which is significantly slowed in accordance with shock or drag propagation models. © 1995 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

Elevated ion charge states in vacuum arc plasmas in a magnetic field

E. M. Oks, I. G. Brown, M. R. Dickinson, R. A. MacGill, H. Emig, P. Spädtke, and B. H. Wolf

Appl. Phys. Lett. 67, 200 (1995); http://dx.doi.org/10.1063/1.114666 (3 pages) | Cited 40 times

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We report on measurements of the charge state distributions of ions formed in a vacuum arc plasma in a magnetic field. A vacuum arc ion source was used for plasma formation and ion beam extraction, and the charge state spectra were investigated using both magnetic and time‐of‐flight charge state diagnostics. We find that the charge states of all of the metal species investigated are significantly increased by a magnetic field of up to 6 kG. New high ion charge states are created, and the mean of the charge state distribution is increased by about 30% at 3.75 kG and 50% at 6 kG. The results are important fundamentally as well as being of relevance to vacuum arc ion source applications such as ion implantation and accelerator injection. © 1995 American Institute of Physics.
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.25.Jm Ionization of plasmas
07.77.Ka Charged-particle beam sources and detectors

Synthesis of superhard carbon nitride composite coatings

Dong Li, Xi Chu, Shang‐Cong Cheng, Xi‐Wei Lin, Vinayak P. Dravid, Yip‐Wah Chung, Ming‐Show Wong, and William D. Sproul

Appl. Phys. Lett. 67, 203 (1995); http://dx.doi.org/10.1063/1.114667 (3 pages) | Cited 78 times

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Crystalline carbon nitride/TiN composite coatings have been deposited using a dual‐cathode magnetron sputtering system onto polished silicon and M2 steel substrates held at room temperature. We propose that TiN provides a lattice‐matched structural template to seed the growth of carbon nitride crystallites. The resulting coatings are smooth, fully crystalline, with nanoindentation hardness in the range of 45–55 GPa. This hardness is in the low‐end range of diamond films. Suggestions for better seeding materials to further improve the hardness are proposed. © 1995 American Institute of Physics.
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81.15.Cd Deposition by sputtering
62.20.-x Mechanical properties of solids
68.60.Bs Mechanical and acoustical properties

Amorphous layer formation on a Ni65Cr15P16B4 alloy by irradiation of an intense pulsed ion beam

M. Yatsuzuka, T. Yamasaki, H. Uchida, and Y. Hashimoto

Appl. Phys. Lett. 67, 206 (1995); http://dx.doi.org/10.1063/1.114668 (2 pages) | Cited 4 times

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Amorphous layer formation by irradiation of an intense pulsed ion beam (PIB) has been studied experimentally. A mixed carbon and fluorine PIB with energy of 180 keV, current density of 180 A/cm2, and pulse duration of 25 ns is exposed to a Ni65Cr15P16B4 alloy, resulting in an amorphous layer on the substrate surface within 0.66 μm in depth. The cooling rate for a nickel substrate from the melting point to the glass transition temperature is estimated to be ∼3.8×105 K/s. © 1995 American Institute of Physics.
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64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
61.80.Jh Ion radiation effects
81.05.Bx Metals, semimetals, and alloys

Nitrogen diffusion mechanism in the R2Fe17 lattice

Y. D. Zhang, J. I. Budnick, W. A. Hines, and D. P. Yang

Appl. Phys. Lett. 67, 208 (1995); http://dx.doi.org/10.1063/1.114669 (3 pages) | Cited 7 times

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In this report, a diffusion analysis has been extended to a lattice containing two interstitial sites, and the results obtained are used to understand: (1) the formation of a nitrided/unnitrided N configuration for intermediate N content and (2) the abnormally small (apparent) diffusion frequency factor, both of which characterize the newly developed R2Fe17 nitrides. It turns out that the diffusion mechanism for N atoms in the R2Fe17 lattice is a chemical reaction diffusion rather than a free‐diffusion process. © 1995 American Institute of Physics.
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66.30.J- Diffusion of impurities
61.72.up Other materials
75.50.Bb Fe and its alloys

Amorphous‐crystal transition of organic dye assemblies: Application to rewritable color recording media

Katsuyuki Naito

Appl. Phys. Lett. 67, 211 (1995); http://dx.doi.org/10.1063/1.114670 (3 pages) | Cited 7 times

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Media composed of a color former (leuco dye), a developer (phenol compound), and a reversible matrix (steroid) were colored in the crystalline states of the matrix and colorless in the amorphous states. Another medium composed of a color former and a developer serving for a reversible matrix (steroid substituted by a phenol group) was colorless in the crystalline state and colored in the amorphous state. Reversible color changes were possible by a heat treatment. Melting, glass transition, and crystallization temperatures were widely controlled by changing the materials. © 1995 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
42.70.Jk Polymers and organics
81.40.Tv Optical and dielectric properties related to treatment conditions

Measurement of polar anchoring coefficient for nematic cell with high pretilt angle

D. Subacius, V. M. Pergamenshchik, and O. D. Lavrentovich

Appl. Phys. Lett. 67, 214 (1995); http://dx.doi.org/10.1063/1.114671 (3 pages) | Cited 17 times

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A method to determine the surface anchoring energy of a nematic liquid crystal is proposed. The technique implies the measurements of optical retardation of a nematic cell as a function of a strength and direction of the applied magnetic field. It enables one to get both pretilt angle α and anchoring coefficient Wa in the course of the same experiment. As an example, both parameters (α=10.9° and Wa=1.5×10−5 J/m2) are measured at the interface between the nematic 5CB and rubbed polyimide film. © 1995 American Institute of Physics.
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61.30.-v Liquid crystals

Spectral series of internal friction peaks in cold‐worked metals

F. Marchesoni

Appl. Phys. Lett. 67, 217 (1995); http://dx.doi.org/10.1063/1.114672 (3 pages) | Cited 1 time

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We suggest that both the Bordoni and the Hasiguti peaks (of the type P1 and P3) be addressed in terms of one basic microscopic mechanism; the nucleation of multikink–antikink pairs in pinned dislocation segments. Correspondingly, the relevant activation energies are multiples of one quantum of energy, the single kink (antikink) rest energy, whence the possibility of ordering these internal friction peaks according to simple spectral series. Such a conclusion appears to be consistent with the experimental data. © 1995 American Institute of Physics.
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61.72.Lk Linear defects: dislocations, disclinations
61.72.Bb Theories and models of crystal defects
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Variation of composition of sputtered TiN films as a function of target nitridation, thermal anneal, and substrate topography

W. Tsai, D. Hodul, T. Sheng, S. Dew, K. Robbie, M. J. Brett, and T. Smy

Appl. Phys. Lett. 67, 220 (1995); http://dx.doi.org/10.1063/1.114673 (3 pages) | Cited 1 time

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The chemical composition of reactively sputtered TiN was measured with RBS and AES for aspect ratio 2 topography as a function of Ti target nitridation. The bottom of the aspect ratio 2 topography was nitrogen depleted (Ti:N=1.78:1) as compared to the field (Ti:N=1.01:1) for films sputtered with a non‐nitrided target at 20 kW and 400 °C. No such depletion effect was observed for TiN films sputtered with a nitrided target. Thermal annealing of the depleted TiN films at 450 °C in N2 restored the composition to near‐stoichiometric. SIMBAD simulation with a saturation‐dependent nitrogen sticking coefficient was used to understand the nature of the nitrogen depletion. © 1995 American Institute of Physics.
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81.15.Cd Deposition by sputtering
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