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13 Nov 1995

Volume 67, Issue 20, pp. 2901-3042

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High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation

L. J. Mawst, A. Bhattacharya, M. Nesnidal, J. Lopez, D. Botez, J. A. Morris, and P. Zory

Appl. Phys. Lett. 67, 2901 (1995); http://dx.doi.org/10.1063/1.114836 (3 pages) | Cited 21 times

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3 W cw output power has been obtained from aluminum‐free, strained‐layer double‐quantum well (DQW) InGaAs/InGaAsP/InGaP uncoated, 100‐μm‐wide stripe diode lasers (λ=0.945 μm) grown by low‐pressure MOCVD on exact (100) GaAs substrates. The combination of high‐band‐gap (1.62 eV) InGaAsP confinement layers and the DQW structure provides relatively weak temperature dependence for both the threshold current Ith as well as the external differential quantum efficiency ηd. Furthermore, the series electrical resistance for 100 μm×600 μm stripe‐contact devices is as low as 0.12 Ω. As a result, the power conversion efficiency reaches a maximum of 40% at 8×Ith, and decreases to only 33% at the maximum power (i.e., 3 W) at 28×Ith. Low‐temperature (12 K) photoluminescence measurements of InGaAs/InGaAsP quantum‐well structures exhibit narrow linewidths (<10 meV) for material grown on exact (100) GaAs substrates, while growths on misoriented substrates exhibit linewidth broadening, as a result of ‘‘step bunching.’’ Laser structures grown on misoriented substrates exhibit increased temperature sensitivity of both Ith and ηd, compared with structures grown on exact (100) substrates. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Tailoring the heavy‐hole and light‐hole quantum‐confined Stark effect using multistrain‐stepped quantum wells

M. Silver, P. D. Greene, and A. R. Adams

Appl. Phys. Lett. 67, 2904 (1995); http://dx.doi.org/10.1063/1.114837 (3 pages) | Cited 1 time

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We show theoretically how the quantum‐confined Stark effect (QCSE) shifts of the E1–HH1 and E1–LH1 energy transitions can be engineered to be closely matched over the entire range of applied fields up to ±100 kV/cm using structures containing more than one strained‐layer composition within each well. In contrast, conventional quantum wells that contain a single uniform composition within each well can at best have the energy levels for the HH1 and LH1 states matched at only one field value. Furthermore, we show how the TE and TM absorption spectra are modified using multistrain‐stepped structures leading to improved polarization‐insensitive QCSE modulators. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.-w Optical properties of specific thin films

Generation of ultrabroadband femtosecond pulses in the mid‐infrared by optical rectification of 15 fs light pulses at 100 MHz repetition rate

A. Bonvalet, M. Joffre, J. L. Martin, and A. Migus

Appl. Phys. Lett. 67, 2907 (1995); http://dx.doi.org/10.1063/1.114838 (3 pages) | Cited 66 times

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Quasi‐single‐cycle near‐infrared light pulses with a measured spectrum extending from 7 to 15 μm have been generated, opening up new perspectives in IR spectroscopy. The method is based on the rectification of 0.8 μm 10–15 fs light pulses from a 100 MHz oscillator, using the instantaneous second‐order polarizability of bulk semiconductors such as GaAs. © 1995 American Institute of Physics.
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07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Wide acceptance bandwidth difference frequency generation in quasi‐phase‐matched LiNbO3

Lew Goldberg, W. K. Burns, and R. W. McElhanon

Appl. Phys. Lett. 67, 2910 (1995); http://dx.doi.org/10.1063/1.114839 (3 pages) | Cited 13 times

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Difference frequency generation in quasi‐phase‐matched LiNbO3 is carried out using a Nd:YAG laser and a high power semiconductor laser. Operation at quasi‐phase‐matching degeneracy point results in an ultrawide 0.5 μm acceptance bandwidth. Crystal‐rotation‐free wavelength tuning of 4.0–4.5 μm, with 0.2 mW output power at 4.5 μm is achieved. Separately, a tuning range 3.0–5.5 μm is demonstrated with sample rotation and a Ti:Al2O3 laser. © 1995 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

On chirp control in two section distributed feedback semiconductor lasers

J. Feng, T. R. Chen, and A. Yariv

Appl. Phys. Lett. 67, 2913 (1995); http://dx.doi.org/10.1063/1.114840 (3 pages) | Cited 1 time

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The characteristics of frequency chirp of a two section distributed feedback (DFB) laser, which is under large signal modulation, is studied while the optical intensity and optical modulation depth are fixed. It is found that the measured time‐averaged power spectrum of the laser changes from one of a predominantly negative frequency chirp (red shift) to positive chirp (blue shift) as the injection current distribution between the two sections is changed. Our theoretical calculation of frequency chirp in DFB lasers based on the Green’s function method explains the shift of the frequency chirp in the two section DFB laser. © 1995 American Institute of Physics.  
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Transverse magnetotransport anisotropy in a semiconductor superlattice

F. Aristone, J. F. Palmier, P. Gassot, J. C. Portal, and F. Mollot

Appl. Phys. Lett. 67, 2916 (1995); http://dx.doi.org/10.1063/1.114841 (3 pages) | Cited 4 times

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The vertical magnetotransport properties of GaAs–AlAs superlattices have been investigated as a function of the in‐plane magnetic field orientation. Two main effects were observed: (i) the influence of the roughness anisotropy with respect to the crystallographic orientation, and (ii) the nonparabolicity of the energy in the plane of the layers. The interface fluctuations induced a modulation of the miniband transport with a period of 180°. The nonparabolic energy of the deflected electronic orbits also induced a modulation of the vertical transport but with a period of 90°. Both observed effects are in qualitative agreement with a semiclassical description of the Boltzmann transport equation. © 1995 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Large second‐order optical nonlinearities in pulsed laser ablated silicon carbide thin films

P. M. Lundquist, H. C. Ong, W. P. Lin, R. P. H. Chang, J. B. Ketterson, and G. K. Wong

Appl. Phys. Lett. 67, 2919 (1995); http://dx.doi.org/10.1063/1.114842 (3 pages) | Cited 11 times

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Large second‐order nonlinear optical response has been observed in silicon carbide thin films deposited by pulsed laser ablation on sapphire and fused silica substrates; films on both substrates were uniform and optically transparent but exhibited distinct orientations. The d33 values of the sapphire‐substrate samples were determined to be 10 pm/V. © 1995 American Institute of Physics.
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78.66.Li Other semiconductors
81.15.Fg Pulsed laser ablation deposition

Interaction of laser ablation plasma plume with grid screens

V. N. Anisimov, V. Yu. Baranov, V. G. Grishina, O. N. Derkach, A. Yu. Sebrant, and M. A. Stepanova

Appl. Phys. Lett. 67, 2922 (1995); http://dx.doi.org/10.1063/1.114843 (3 pages) | Cited 4 times

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Optical emission spectroscopy and charge collector time‐of‐flight measurements have been used to study interaction of laser ablation carbon plasma with grid screens in vacuum under conditions typical for pulsed laser deposition of thin diamondlike films. The effect of velocity distribution transformation of the ion flow has been observed and studied in a variety of experimental conditions. Our results indicate that the observed phenomenon is due to interaction of two plasma flows, the initial expanding one and the fraction of that flow scattered by the substrate or the screen. Three typical modes of velocity distribution function transformation have been observed depending on the plasma density: linear attenuation of the flow density, nonlinear attenuation of the slow ‘‘tail’’ of the velocity distribution function, and nonlinear transformation of the entire velocity spectrum. The latter regime occurs when plasma is throttling through the fine mesh screen. Our observations show that the reported phenomenon may substantially affect deposited film properties. © 1995 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Fg Pulsed laser ablation deposition

1 nm deep mechanical processing of muscovite mica by atomic force microscopy

Shojiro Miyake

Appl. Phys. Lett. 67, 2925 (1995); http://dx.doi.org/10.1063/1.114844 (3 pages) | Cited 21 times

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Atomic‐scale mechanical processing of layered materials such as muscovite mica was performed using an atomic force microscope (AFM). Processing began at a certain critical load above 130 nN, and the processing depth increased discretely with load. Fracture easily occurred at the two cleavage planes of SiO4–K and K–SiO4 interfaces. With a load slightly larger than the critical load, several repetitions of mechanical sliding of the tip generated a 1 nm deep groove which corresponds to the distance from the top surface of SiO4 to the top surface of the next SiO4 layer beneath it with the removal of residual potassium on the surface. For example, a groove with four steps of 1 nm depth was processed by step‐by‐step mechanical sliding. © 1995 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.65.-b Surface treatments
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering

J. E. Greene, J.‐E. Sundgren, L. Hultman, I. Petrov, and D. B. Bergstrom

Appl. Phys. Lett. 67, 2928 (1995); http://dx.doi.org/10.1063/1.114845 (3 pages) | Cited 134 times

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The preferred orientation of polycrystalline TiN films grown by ultrahigh‐vacuum reactive‐magnetron sputter deposition on amorphous SiO2 at 350 °C in pure N2 discharges was controllably varied from (111) to completely (002) by varying the incident ion/metal flux ratio Ji/JTi from 1 to ≥5 with the N+2 ion energy Ei maintained constant at ≂20 eV (≂10 eV per incident accelerated N). All samples were slightly over‐stoichiometric with N/Ti=1.02±0.03. Films deposited with Ji/JTi=1 initially exhibit a mixed texture with competitive columnar growth which slowly evolves into a nearly complete (111) texture at film thicknesses greater than 1 μm. However, films grown with Ji/JTi≥5 exhibit an essentially complete (002) preferred orientation from the earliest observable stages. The normalized XRD (002) intensity ratio in thick layers increased from ≂0 to 1 as Ji/JTi was varied from 1 to ≥5. Both (111) and (001) interplanar spacings remained constant as a function of film thickness yielding a lattice constant of 0.4240±0.0005 nm, equal to that of unstrained bulk TiN. Contrary to previous models, the present results establish that TiN preferred orientation can be controlled without introducing large in‐plane compressive stress and/or changes in the strain energy as a function of layer thickness. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering

Secondary defect annihilation in ion beam processed SixGe1−x layers using titanium silicide

K. Kyllesbech Larsen, F. La Via, S. Lombardo, V. Raineri, and S. U. Campisano

Appl. Phys. Lett. 67, 2931 (1995); http://dx.doi.org/10.1063/1.114846 (3 pages) | Cited 2 times

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The secondary defect annihilation titanium silicidation in SixGe1−x layers, formed by high dose Ge implantation in (100) silicon, has been studied systematically as a function of the Ge fluence, implantation energy, and TiSi2 thickness. Rutherford backscattering spectrometry and transmission electron microscopy have been used to investigate the damaged SixGe1−x layer recovery and to monitor the germanium diffusion and reaction during the silicidation. For the highest fluence of 3×1016 Ge/cm2 (≊15 at. % Ge) it is found that nearly a complete annihilation of the secondary defects can be achieved after the first low‐temperature silicidation step. After a second high‐temperature silicidation step all residual defects have been removed. For fluences lower than 3×1016 Ge/cm2 a complete recovery is already obtained after the first silicidation step. © 1995 American Institute of Physics.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects

Deposition of high‐quality TiN using tetra‐isopropoxide titanium in an electron cyclotron resonance plasma process

A. Weber, R. Poeckelmann, and C.‐P. Klages

Appl. Phys. Lett. 67, 2934 (1995); http://dx.doi.org/10.1063/1.114847 (2 pages) | Cited 14 times

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High‐quality TiN films were deposited in an electron cyclotron resonance (ECR) plasma process at low substrate temperatures between 100 and 450 °C using tetra‐isopropoxide titanium (TIPT) {Ti[OCH(CH3)2]4} as precursor. TIPT was introduced into the downstream region of an ECR nitrogen or ammonia plasma. The electrical properties of the gold colored TiN layers (100–400 μΩ cm) depend on the deposition rate and the substrate temperature. Despite the use of an oxygen containing titanium precursor the oxygen content in the TiN was found to be ≤2 at.%. The measured resistivities and the purity of the TiN films indicate a selective cleavage of the isopropoxide ligand in the ECR downstream plasma. The films were characterized by resistivity measurements and secondary ion mass spectrometry. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Effect of atomic hydrogen on the acetylene adsorbed Si(100)(2×1) surface

Yan Chen, Zhaohui Liu, Qingzhe Zhang, Kean Feng, and Zhangda Lin

Appl. Phys. Lett. 67, 2936 (1995); http://dx.doi.org/10.1063/1.114848 (3 pages) | Cited 10 times

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High‐resolution electron energy loss spectroscopy, low‐energy electron diffraction, and quadrupole mass spectrometer have been employed to study the effect of atomic hydrogen on the acetylene saturated preadsorbed Si(100)(2×1) surface at room temperature. It is evident that the atomic hydrogen has a strong effect on the adsorbed C2H2 and the change of the underlying surface structure of Si. The experimental results show that CH and CH2 radicals coexist on the Si surface after the dosing of atomic hydrogen; meanwhile, the surface structure changes from Si(2×1) to a dominant of (1×1). These results indicate that the atomic hydrogen can open C=C double bonds and change them into C–C single bonds, transfer the adsorbed C2H2 to C2Hx(x=3,4) and break the underlying Si–Si dimer, but it cannot break the C–C bond intensively. Some C4 species have been formed during the dosing with atomic hydrogen. It may be the result of atomic hydrogen abstraction from C2Hx which leads to carbon catenation between two adjacent CC dimers. The formed C4 is stable on Si(100) surfaces up to 1100 K and can be expected to host diamond nucleation. © 1995 American Institute of Physics. [S0003‐6951(95)04246‐X]
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Photoacoustic study of the effect of degassing temperature on thermal diffusivity of hydroxyl loaded alumina

S. Sankara Raman, V. P. N. Nampoori, C. P. G. Vallabhan, G. Ambadas, and S. Sugunan

Appl. Phys. Lett. 67, 2939 (1995); http://dx.doi.org/10.1063/1.114818 (3 pages) | Cited 11 times

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The thermal diffusivity of γ‐alumina is determined by the photoacoustic method. The method is calibrated by determining the thermal diffusivity of copper and aluminum. The effect of the chemisorbed hydroxyl groups on thermal diffusivity is studied by degassing the sample at different temperatures. © 1995 American Institute of Physics.
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44.30.+v Heat flow in porous media
05.70.Ce Thermodynamic functions and equations of state
65.90.+i Other topics in thermal properties of condensed matter (restricted to new topics in section 65)
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Enhancement of room‐temperature photoluminescence in thin‐film polycrystalline silicon produced by low power laser annealing

S. Ostapenko, A. U. Savchuk, G. Nowak, J. Lagowski, and A. M. Hoff

Appl. Phys. Lett. 67, 2942 (1995); http://dx.doi.org/10.1063/1.114819 (3 pages) | Cited 2 times

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We have found that seconds of 100 mW Ar laser exposure produces more than 100 times an increase in infrared photoluminescence (PL) intensity in thin‐film polycrystalline silicon (poly‐Si). The change of PL intensity on laser exposed film areas (minimum spot size of 20 μm) and the variation in film surface morphology measured by atomic force microscope are compared. The effect of PL enhancement strongly correlates to two distinctive processes: (a) the increase of a grain size due to poly‐Si recrystallization, and (b) the oxygen incorporation into the film from glass or quartz substrates or/and from ambient gas. © 1995 American Institute of Physics.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.55.Hx Other solid inorganic materials

Growth of ZnSe/MgS strained‐layer superlattices by molecular beam epitaxy

N. Teraguchi, H. Mouri, Y. Tomomura, A. Suzuki, H. Taniguchi, J. Rorison, and G. Duggan

Appl. Phys. Lett. 67, 2945 (1995); http://dx.doi.org/10.1063/1.114820 (3 pages) | Cited 18 times

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Growth of ZnSe/MgS strained‐layer superlattices (SLSs) has been carried out by molecular beam epitaxy. The crystal quality of SLSs degraded with MgS thickness of more than about 3 monolayers. Photoluminescence due to the transition between quantized levels was observed. Photoluminescence peak energies higher than 3.0 eV at 77 K were observed, which are comparable to that of ZnMgSSe quaternary material. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Et II-VI semiconductors

Photoinduced intersubband absorption in Si/SiGe quantum wells

P. Boucaud, L. Gao, Z. Moussa, F. Visocekas, F. H. Julien, J.‐M. Lourtioz, I. Sagnes, Y. Campidelli, and P.‐A. Badoz

Appl. Phys. Lett. 67, 2948 (1995); http://dx.doi.org/10.1063/1.114821 (3 pages) | Cited 10 times

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We have investigated photoinduced infrared absorption in p‐doped Si/SiGe quantum wells. The absorption spectra exhibit two distinct features: free‐carrier absorption and intersubband absorption in the valence band. The photoinduced absorption in both p and s polarizations is found to depend on the carrier density and strongly differs from the original absorption of the doped quantum wells. Photoinduced intersubband absorption is attributed to carriers away from the Brillouin zone center. We show that photoinduced intersubband absorption spectroscopy can provide useful information on valence band mixing effects in Si/SiGe quantum wells. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.47.-p Spectroscopy of solid state dynamics

Epitaxial silicon growth using supersonic jets of disilane: A model study of energetic jet deposition

K. A. Pacheco, B. A. Ferguson, C. Li, S. John, S. Banerjee, and C. B. Mullins

Appl. Phys. Lett. 67, 2951 (1995); http://dx.doi.org/10.1063/1.114822 (3 pages) | Cited 10 times

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High (2 eV) and low kinetic energy supersonic jets of disilane as well as ultrahigh vacuum chemical vapor deposition have been employed to grow epitaxial silicon thin films on Si(100) wafers at temperatures ranging from 500 to 650 °C. The growth properties and film uniformity are compared in order to characterize the high energy technique. High translational energy disilane supersonic jets increase the efficiency of deposition by increasing the disilane reaction probability. The growth profiles from the high energy jet are sharply peaked due to a focusing of the precursor along the jet centerline. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology

Band‐gap tuning of InGaAs/InGaAsP/InP laser using high energy ion implantation

S. Charbonneau, P. J. Poole, Y. Feng, G. C. Aers, M. Dion, M. Davies, R. D. Goldberg, and I. V. Mitchell

Appl. Phys. Lett. 67, 2954 (1995); http://dx.doi.org/10.1063/1.114823 (3 pages) | Cited 30 times

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The technique of ion‐induced quantum well intermixing using broad area, high energy (1 MeV P+) ion implantation has been used to tune the emission wavelength of an InGaAs/InGaAsP/InP multiple quantum well (MQW) laser operating at 1.5 μm. The optical quality of the band‐gap shifted material is assessed using low‐temperature photoluminescence (PL). The band‐gap tuned lasers are characterized in terms of threshold current density and external quantum efficiency and exhibit blue shifts in the lasing spectra of up to 63 nm. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating active as well as passive optoelectronic devices. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
61.80.Jh Ion radiation effects

Time‐resolved measurement of single‐electron tunneling in a Si single‐electron transistor with satellite Si islands

A. Fujiwara, Y. Takahashi, K. Murase, and M. Tabe

Appl. Phys. Lett. 67, 2957 (1995); http://dx.doi.org/10.1063/1.114824 (3 pages) | Cited 29 times

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A Si single‐electron transistor (SET) with satellite Si islands has been fabricated by pattern‐dependent oxidation of cross‐shaped Si wires on a separation by implanted oxygen (SIMOX) substrate. The oscillatory conductance‐versus‐gate voltage characteristics of the SET show hysteresis as a result of abrupt jumps in the conductance at high temperatures around 30 K. This phenomenon is attributed to the memory effect of a single electron that tunnels between the SET Si island and the satellite Si islands. Time‐resolved measurements have clarified that the conductance jump is a Poisson process, which is clear evidence of the single‐electron tunneling between the Si islands. © 1995 American Institute of Physics.
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73.40.Gk Tunneling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells

J. N. Baillargeon, K. Y. Cheng, and A. Y. Cho

Appl. Phys. Lett. 67, 2960 (1995); http://dx.doi.org/10.1063/1.114825 (3 pages) | Cited 5 times

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Aluminum‐free GaInAs/GaInP strained quantum well (QW) laser diodes grown on GaAs were prepared by molecular beam epitaxy (MBE) employing solid phosphorus and arsenic valved cracking cells for the first time. The separate confinement heterojunction laser structure utilized Ga0.51In0.49P cladding layers, a GaAs waveguide region, and a single 100 Å Ga0.18In0.82As QW. Stimulated emission from this structure was observed at λ∼0.98 μm (1.265 eV). The threshold current density of broad area devices with 100×500 μm2 dimensions were measured as low as 290 A/cm2 and had power slope efficiencies between 0.35 and 0.40 W/A. The estimated transparency current density for the structure is 50 A/cm2. The data show all solid source MBE is a growth technology capable of producing laser diode structures of comparable quality to that of the other growth processes requiring hydrides. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Compositional and structural analysis of AlSb(As) tunneling barriers in InAs/AlSb(As)/GaSb resonant interband‐tunneling structures

J. Wagner, J. Schmitz, H. Obloh, and P. Koidl

Appl. Phys. Lett. 67, 2963 (1995); http://dx.doi.org/10.1063/1.114826 (3 pages) | Cited 6 times

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InAs/AlSb/GaSb/AlSb/InAs interband‐tunneling structures have been analyzed with respect to the composition and structural quality of the AlSb tunneling barriers. The addition of AlAs monolayers at the interfaces between the AlSb barriers and the InAs and GaSb layers was found to result in the expected reduction in the valley current density of the resonant interband‐tunneling diode. Vibrational mode Raman spectroscopy showed that the introduction of AlAs monolayers led to the formation of pseudoternary Al(SbAs) barriers, which cause the observed reduction of the valley current density. Ellipsometric measurements indicate that the structural quality of both types of barrier layers, with and without AlAs monolayers added to the interfaces, is inferior to that of thick bulklike AlSb layers. The observation of Raman scattering from a coupled hole plasmon‐phonon mode indicates the formation of a hole gas in the GaSb quantum well at the center of the tunneling structure. © 1995 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
73.40.Gk Tunneling

Anisotropic high‐field transverse differential mobility of holes in silicon

J. M. Hinckley and J. Singh

Appl. Phys. Lett. 67, 2966 (1995); http://dx.doi.org/10.1063/1.114827 (3 pages) | Cited 1 time

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Anisotropy of the silicon valence band does not lead to any significant anisotropy in the longitudinal hole transport properties, but we find that the transverse mobility is quite anisotropic. The transverse mobility represents the response of charge carriers to a small transverse electric field in the presence of a strong longitudinal field. A detailed, anisotropic Monte Carlo method has been applied to the calculation of the hole transverse differential mobility in silicon. The transverse differential mobility is studied both with regard to variations in the orientation, with respect to the crystalline axes, of the high longitudinal electric field, and with regard to variations in the transverse direction of the mobility, taken in the plane perpendicular to the high electric field. The anisotropy of the valence band causes the transverse differential mobility to strongly vary with respect to the electric field orientation. Symmetry considerations show that the transverse differential mobility is isotropic in the {100} and {111} planes and has twofold rotational symmetry in the {101} planes. Our calculations bear this out. Furthermore, we show that the transverse mobility can be much different from the chordal mobility, in distinction to the case for isotropic band structures. © 1995 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects
72.70.+m Noise processes and phenomena
72.80.Cw Elemental semiconductors

Band alignment at the CdS/Cu2In4Se7 heterojunction interface

A. J. Nelson, C. R. Schwerdtfeger, and W. L. O’Brien

Appl. Phys. Lett. 67, 2969 (1995); http://dx.doi.org/10.1063/1.114828 (3 pages) | Cited 1 time

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Band offsets at the CdS/Cu2In4Se7 heterojunction interface were studied by synchrotron radiation soft x‐ray photoemission spectroscopy. CdS overlayers were sequentially grown in steps, at room temperature, on the Cu2In4Se7 crystal. Photoemission measurements were acquired after each growth to determine the electronic structure at the heterojunction interface. Results of these measurements indicate that the valence‐band offset ΔEvbm is 1.10(±0.20) eV and that the conduction‐band offset ΔEcbm is 0.22(±0.20) eV for the CdS/Cu2In4Se7 heterojunction. © 1995 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Nitrogen doping of tellurium‐based II–VI compounds during growth by molecular beam epitaxy

T. Baron, K. Saminadayar, and N. Magnea

Appl. Phys. Lett. 67, 2972 (1995); http://dx.doi.org/10.1063/1.114829 (3 pages) | Cited 11 times

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We report p‐type doping of tellurium‐based compounds (CdTe, ZnTe) and alloys (CdMgTe, ZnMgTe, ZnCdTe) in molecular beam epitaxy using nitrogen atoms from a plasma source. The dominant shallow acceptor, as deduced from transport and optical measurements, has an ionization energy close to the effective mass value. A systematic decrease of the doping efficiency is observed as the Zn content decreases. We discuss the key role of the Zn content in the material in the framework of two factors: (i) local strain induced in the lattice by the presence of nitrogen and (ii) formation of compounds involving nitrogen atoms. © 1995 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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